JPH0438524Y2 - - Google Patents

Info

Publication number
JPH0438524Y2
JPH0438524Y2 JP1986195595U JP19559586U JPH0438524Y2 JP H0438524 Y2 JPH0438524 Y2 JP H0438524Y2 JP 1986195595 U JP1986195595 U JP 1986195595U JP 19559586 U JP19559586 U JP 19559586U JP H0438524 Y2 JPH0438524 Y2 JP H0438524Y2
Authority
JP
Japan
Prior art keywords
terrace
electrode metal
solder
metal plate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1986195595U
Other languages
English (en)
Other versions
JPS63100847U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986195595U priority Critical patent/JPH0438524Y2/ja
Publication of JPS63100847U publication Critical patent/JPS63100847U/ja
Application granted granted Critical
Publication of JPH0438524Y2 publication Critical patent/JPH0438524Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【考案の詳細な説明】 本考案は、半導体装置の構造に関するものであ
る。従来のこの種装置は、半導体基体の両主表面
に夫々電極金属板を、半田を介して接続してお
り、その構造を第１図の断面構造図に示す。電極
金属板１上に、半導体基体２を半田３を介して接
続し、半導体基体２のPN接合面に近い側の主表
面には、電極金属板４を半田３を介して接続して
いるが、電極金属板４の自重と半田３の表面張力
等により、電極金属板４のテラス側面部４ａに半
田３が多量に付いて、半導体基体２の主表面と電
極金属板４のテラス平たん部４ｂ間の半田３は、
極端に厚さが薄くなる欠点があつた。
本考案は、前述の欠点を解消したもので、単体
又は複合型の半導体基体に於いて、信頼性に富み
生産性の良い半導体装置を提供することを目的と
する。第２図は本考案の実施例を示す断面構造図
であつて、１は電極金属板、２は半導体基体、３
は半田、４は他の電極金属板、４ａはテラス側面
部、４ｂはテラス平たん部、５はコーテイング材
による塗布部分を示す。電極金属板４は第３図に
示す様に、テラス側面部４ａに半田漏れ性の良く
ないコーテイング材（例えばポリイミド樹脂）の
塗布部分５がある。塗布部分５は電極金属板４を
加工する段階で、前もつて所定位置（形状、塗布
量は問わない）に塗布することにより、生産性が
良く、安価で製作することが出来る。本装置を組
み立てるには、電極金属板１上に、半田３、半導
体基体２、半田３及び電極金属板４の順にセツト
し、加熱炉（図示していない）で半田固着を行な
う。組み立てられた半導体装置は、テラス側面部
４ａにコーテイング材による塗布部分５があるた
め、半田３がテラス側面部４ａに付くことなく、
半導体基体２の主表面とテラス平たん部４ｂ間の
半田厚さを一定に保つことが出来る。半田厚さは
半田３の供給量によつて可変することができ、電
気的、熱的ストレスに強い厚さ（例えば50μ）に
することが出来る。
その他、各部の変形、変換、付加等は本願に含
まれる。
以上のごとく、本考案の半導体装置は、組み立
てが容易で電気的、熱的ストレスに強く、信頼性
の高い半導体装置を提供するものである。実用に
供し、産業上の効果は大なるものである。
【図面の簡単な説明】
第１図は従来の半導体装置の断面構造図、第２
図は本考案の実施例を示す断面構造図、第３図は
本考案の半導体装置に用いる電極金属板の構造例
図、であり、１……電極金属板、２……半導体基
体、３……半田、４……電極金属板、４ａ……テ
ラス側面部、４ｂ……テラス平たん部、５……コ
ーテイング材による塗布部分である。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) ２つの主表面を有する半導体基体の両表面
    に、それぞれ電極金属板１及び４を配設した半
    導体装置において、半導体基体のPN接合面に
    近い側の主表面に配設する電極金属板４にはテ
    ラス側面部４ａ及びテラス平たん部４ｂから成
    るテラスを設け、該テラス側面部４ａに半田漏
    れ性の良くないコーテイング材の塗布部分を設
    け、半導体基体の主表面と該テラス平たん部４
    ｂ間の半田厚さをほぼ均一にすることを特徴と
    する半導体装置。 (2) 前記、コーテイング材にポリイミド系樹脂を
    用いた事を特徴とする実用新案登録請求の範囲
    第(1)項記載の半導体装置。
JP1986195595U 1986-12-19 1986-12-19 Expired JPH0438524Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986195595U JPH0438524Y2 (ja) 1986-12-19 1986-12-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986195595U JPH0438524Y2 (ja) 1986-12-19 1986-12-19

Publications (2)

Publication Number Publication Date
JPS63100847U JPS63100847U (ja) 1988-06-30
JPH0438524Y2 true JPH0438524Y2 (ja) 1992-09-09

Family

ID=31153625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986195595U Expired JPH0438524Y2 (ja) 1986-12-19 1986-12-19

Country Status (1)

Country Link
JP (1) JPH0438524Y2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108206163A (zh) * 2016-12-19 2018-06-26 安世有限公司 Ic封装件中夹布置的半导体器件和方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001545A (en) * 1988-09-09 1991-03-19 Motorola, Inc. Formed top contact for non-flat semiconductor devices
US4935803A (en) * 1988-09-09 1990-06-19 Motorola, Inc. Self-centering electrode for power devices
JP4645276B2 (ja) * 2005-04-12 2011-03-09 富士電機システムズ株式会社 半導体装置
JP6479036B2 (ja) * 2014-10-30 2019-03-06 三菱電機株式会社 半導体装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313877A (en) * 1976-07-23 1978-02-07 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313877A (en) * 1976-07-23 1978-02-07 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108206163A (zh) * 2016-12-19 2018-06-26 安世有限公司 Ic封装件中夹布置的半导体器件和方法

Also Published As

Publication number Publication date
JPS63100847U (ja) 1988-06-30

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