JPH0437248A - Light emitting element device and manufacture of light emitting element device and picture reader - Google Patents
Light emitting element device and manufacture of light emitting element device and picture readerInfo
- Publication number
- JPH0437248A JPH0437248A JP2141297A JP14129790A JPH0437248A JP H0437248 A JPH0437248 A JP H0437248A JP 2141297 A JP2141297 A JP 2141297A JP 14129790 A JP14129790 A JP 14129790A JP H0437248 A JPH0437248 A JP H0437248A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting element
- emitting layer
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 230000015572 biosynthetic process Effects 0.000 claims 2
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
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Landscapes
- Electroluminescent Light Sources (AREA)
- Facsimile Heads (AREA)
- Facsimile Scanning Arrangements (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はファクシミリやイメージスキャナ等の画像人力
部に用いられる発光素子装置に係り、特に安価に製造す
ることができる厚膜プロセスで発光層を形成する発光素
子装置及びその製造方法及び画像読取装置に関するもの
である。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a light emitting element device used in an image processing unit such as a facsimile machine or an image scanner. The present invention relates to a light emitting device to be formed, a method for manufacturing the same, and an image reading device.
(従来の技術)
近年、画像読取装置の小型化を図るために、蛍光灯の代
わりにエレクトロルミネッセンス(EL発光)素子など
の固体光源を使用し、発光素子と受光素子とを一体化し
て形成されたものが提案されている。(Prior Art) In recent years, in order to miniaturize image reading devices, solid-state light sources such as electroluminescent (EL light emitting) elements are used instead of fluorescent lamps, and the light emitting elements and light receiving elements are integrated. Something has been proposed.
この種の画像読取装置では、原稿面を照射する光が原稿
面に対して直角に照射するようにして照度むらを防せぐ
とともに、原稿面からの反射光が発光素子に入射する光
路長を短くするため、例えば第4図及び第5図に示すよ
うに、ライン状に配設された受光素子31を有する受光
素子アレイ30の直上に接着剤50を介してEL発光素
子装置40を配置している。そして、各受光素子31に
対応する位置のEL発光素子装置40に透光部60を形
成し、この透光部60を通して原稿面7゜からの反射光
80が各受光素子31に導かれるようになっている。This type of image reading device prevents uneven illuminance by irradiating the document surface at right angles to the document surface, and also reduces the optical path length of the light reflected from the document surface entering the light emitting element. In order to shorten the length, for example, as shown in FIGS. 4 and 5, an EL light emitting element device 40 is placed directly above a light receiving element array 30 having light receiving elements 31 arranged in a line with an adhesive 50 interposed therebetween. ing. Then, a light transmitting portion 60 is formed in the EL light emitting device device 40 at a position corresponding to each light receiving element 31, so that reflected light 80 from the document surface 7° is guided to each light receiving element 31 through this light transmitting portion 60. It has become.
そして、EL発光素子装ft40の透光部60は次のよ
うにして構成される。すなわち、透明基板41上に、薄
膜プロセスで透明電極42.絶縁層43、発光層44.
絶縁層45を着膜し、更に金属電極46を着膜及び方形
上の開口部46aを有するようにエツチングによりパタ
ーンニングする。The light-transmitting portion 60 of the EL light emitting element assembly ft40 is configured as follows. That is, a transparent electrode 42. is formed on a transparent substrate 41 using a thin film process. Insulating layer 43, light emitting layer 44.
An insulating layer 45 is deposited, and a metal electrode 46 is deposited and patterned by etching to have a rectangular opening 46a.
透明電極42.絶縁層431発光層44は、いずれも透
光性の部材で形成されているので、金属電極46に設け
た開口部46a上に位置する部分が透光部60となる。Transparent electrode 42. Since the insulating layer 431 and the light emitting layer 44 are both formed of light-transmitting materials, the portion located above the opening 46a provided in the metal electrode 46 becomes the light-transmitting portion 60.
(発明が解決しようとする課題)
しかしながら上記構造によると、薄膜型のEL発光素子
を使用するので、その製造コストが高価となるとともに
、薄膜プロセスの際の真空チャンバーの大きさ等により
EL発光素子の面積が制限され大面積のものが得にくい
という問題点があった。(Problems to be Solved by the Invention) However, according to the above structure, since a thin film type EL light emitting element is used, the manufacturing cost is high, and the EL light emitting element is There was a problem in that the area was limited and it was difficult to obtain a large area.
一方、スクリーン印刷等の厚膜プロセスで発光層を形成
するEL発光素子も存在し、このEL発光素子によれば
上述の欠点は解消するが、発光層としてZnS等の発光
粒子を有機バインダー中に分散したものを使用するので
、ZnSと有機バインダーとの屈折率の相違により発光
層中を原稿面からの反射光が散乱して効率良く透過する
ことができない。従って、前記した発光素子と受光素子
とを一体化した画像読取装置に厚膜型のEL発光素子を
使用すると、受光素子上の発光層部分についても除去し
なければならない。しかしながら、厚膜プロセスで着膜
された発光層は10〜100μmと厚くなるので微細パ
ターニングすることができず、従来例の画像読取装置の
構造及び製造方法においてEL発光素子部分を単に厚膜
型に置き換えることはできなかった。On the other hand, there are also EL devices in which a luminescent layer is formed using a thick film process such as screen printing.This EL device eliminates the above-mentioned drawbacks, but the luminescent layer consists of luminescent particles such as ZnS in an organic binder. Since a dispersed material is used, the light reflected from the document surface is scattered in the light-emitting layer due to the difference in refractive index between ZnS and the organic binder, and cannot be transmitted efficiently. Therefore, when a thick film type EL light emitting element is used in an image reading device that integrates the light emitting element and the light receiving element described above, the light emitting layer portion on the light receiving element must also be removed. However, since the light emitting layer deposited by the thick film process is as thick as 10 to 100 μm, fine patterning is not possible. It could not be replaced.
本発明は上記実情に鑑みてなされたもので、発光素子と
受光素子とを一体化した画像読取装置に使用することが
できる厚膜型のEL発光素子装置及びその製造方法及び
厚膜型のEL発光素子装置を用いた画像読取装置を提供
することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and includes a thick film type EL light emitting element device that can be used in an image reading device that integrates a light emitting element and a light receiving element, a method for manufacturing the same, and a thick film type EL light emitting device. An object of the present invention is to provide an image reading device using a light emitting element device.
(課題を解決するための手段)
上記従来例の問題点を解決するため請求項1の発光素子
装置は、透明基板に複数の凹部を形成し、厚膜プロセス
で着膜された発光層と、発光層を挾む2つの電極とを前
記各凹部内に積層し、前記発光層を2つの電極で挟む発
光素子形成部と光が透過する透光部とを交互に配置する
ことを特徴としている。(Means for Solving the Problems) In order to solve the problems of the above-mentioned conventional example, a light emitting element device according to claim 1 includes a light emitting layer formed by forming a plurality of recesses in a transparent substrate and deposited by a thick film process, Two electrodes sandwiching the light emitting layer are laminated in each of the recesses, and a light emitting element forming part sandwiching the light emitting layer between the two electrodes and a transparent part through which light passes are arranged alternately. .
請求項2の発光素子装置の製造方法は、透明基板上にフ
ォトリソグラフィ法により複数の凹部を形成する凹部形
成工程と、凹部が形成された透明基板上に帯状の透明電
極を形成する電極形成工程と、発光粒子を分散した樹脂
を厚膜プロセスで着膜して成る発光層、該発光層上に位
置する金属電極を前記凹部に積層する発光素子形成工程
と、を具備することを特徴としている。The method for manufacturing a light emitting device device according to claim 2 includes a recess forming step of forming a plurality of recesses on a transparent substrate by photolithography, and an electrode forming step of forming a band-shaped transparent electrode on the transparent substrate in which the recesses are formed. and a light emitting element forming step of laminating a light emitting layer formed by depositing a resin in which light emitting particles are dispersed in a thick film process, and a metal electrode located on the light emitting layer in the recess. .
請求項3の画像読取装置は、発光粒子を分散した樹脂を
厚膜プロセスで着膜して成る発光層と、発光層を挟む2
つの電極とを透明基板上に積層し、前記発光層を2つの
電極で挟む発光素子形成部と、光が透過する透光部とを
受光素子アレイの主走査方向に交互に設け、該透光部に
対応する位置に各受光素子を配設し、前記発光素子形成
部から発光した光が透明基板の反発光素子側に配置され
た原稿面で反射し、反射光が前記透光部を透過して前記
受光素子に入射することを特徴としている。The image reading device according to claim 3 includes a light emitting layer formed by depositing a resin in which light emitting particles are dispersed in a thick film process, and two layers sandwiching the light emitting layer.
two electrodes are stacked on a transparent substrate, and a light-emitting element forming part in which the light-emitting layer is sandwiched between two electrodes and a light-transmitting part through which light passes are provided alternately in the main scanning direction of the light-receiving element array. Each light-receiving element is arranged at a position corresponding to the part, and the light emitted from the light-emitting element forming part is reflected on the document surface arranged on the repulsion light element side of the transparent substrate, and the reflected light is transmitted through the light-transmitting part. The light is then incident on the light receiving element.
(作用)
請求項1の発光素子装置によれば、透明基板に複数の凹
部を形成し、この凹部にEL発光素子が形成されるので
、EL発光素子の発光層をエツチングすることなしに前
記凹部間に透光部を形成することができる。(Function) According to the light emitting element device of the first aspect, since a plurality of recesses are formed in the transparent substrate and the EL light emitting element is formed in the recesses, the recesses can be etched without etching the light emitting layer of the EL light emitting element. A light-transmitting part can be formed in between.
請求項2の発光素子装置の製造方法によれば、透明基板
に複数の凹部を形成し、この凹部にEL発光素子を形成
するようにしたので、EL発光素子の発光層を厚膜プロ
セスで着膜することができる。According to the method for manufacturing a light emitting element device according to claim 2, a plurality of recesses are formed in the transparent substrate and the EL light emitting element is formed in the recesses, so that the light emitting layer of the EL light emitting element can be attached by a thick film process. It can be membraned.
請求項3の画像読取装置によれば、発光素子形成部と透
光部とを受光素子アレイの主走査方向に交互に設け、該
透光部に対応する位置に各受光素子を配設したので、原
稿面からの反射光は前記透光部を介して各受光素子に導
かれる。According to the image reading device of claim 3, the light-emitting element forming portions and the light-transmitting portions are provided alternately in the main scanning direction of the light-receiving element array, and each light-receiving element is disposed at a position corresponding to the light-transmitting portion. , reflected light from the document surface is guided to each light receiving element via the light transmitting section.
(実施例)
本発明の発光素子装置の一実施例について第1図(g)
及び第2図(a)を参照しながら説明する。(Example) FIG. 1(g) shows an example of the light emitting device of the present invention.
This will be explained with reference to FIG. 2(a).
第1図(g)は第2図(a)のI−I’断面説明図であ
る。FIG. 1(g) is an explanatory cross-sectional view taken along line II' in FIG. 2(a).
このEL発光素子装置は、透明基板1の長尺方向に周期
的に複数の凹部2を形成し、これらの各凹部2内に発光
素子形成部3を設け、この発光素子形成部3と光が透過
する透光部4とを交互に配置することするように構成し
ている。各凹部2には、透明電極52発光粒子を分散し
た樹脂を厚膜プロセスで着膜して成る発光層6.誘電体
層7゜金属電極8を順次積層し、発光層6を挾む透明電
極5及び金属電極8との間に交流電圧が供給されたとき
、その極性変化時に発光層6から光が放射される。This EL light emitting element device has a plurality of recesses 2 periodically formed in the longitudinal direction of a transparent substrate 1, a light emitting element forming part 3 is provided in each of these recesses 2, and light is connected to the light emitting element forming part 3. The transparent parts 4 that transmit light are arranged alternately. Each recess 2 has a transparent electrode 52 and a luminescent layer 6 formed by depositing a resin in which luminescent particles are dispersed using a thick film process. A dielectric layer 7. Metal electrodes 8 are sequentially laminated, and when an alternating current voltage is supplied between the transparent electrode 5 and the metal electrode 8 that sandwich the light emitting layer 6, light is emitted from the light emitting layer 6 when the polarity changes. Ru.
次に、このEL発光素子装置の製造方法について第1図
(a)乃至(g)を参照しながら説明する。Next, a method for manufacturing this EL light emitting device will be described with reference to FIGS. 1(a) to 1(g).
ガラス等から成る厚さ100μmの透明基板1上の全面
にレジスト10を塗布しく第1図(a))、露光、現像
してパターニングを行ない前記発光素子形成部に相当す
る部分のレジストを除去してレジストパターン10′を
形成する。A resist 10 is applied to the entire surface of a transparent substrate 1 made of glass or the like with a thickness of 100 μm (FIG. 1(a)), and patterned by exposure and development to remove the resist in the portion corresponding to the light emitting element forming portion. A resist pattern 10' is formed.
次いて、フッ酸等のエツチング液を用いて、レジスト除
去部分の下方の透明基板1をウェットエツチングして深
さ50〜60μmの複数の凹部2を形成しく第1図(b
)) 、レジストパターン10′を除去する。Next, using an etching solution such as hydrofluoric acid, the transparent substrate 1 below the resist removed portion is wet-etched to form a plurality of recesses 2 with a depth of 50 to 60 μm.
)), the resist pattern 10' is removed.
スプレーブレーティング法、CVD法あるいは物理蒸着
法により、前記凹部2を覆うようにITO等の透明電極
5を着膜する(第1図(C))。A transparent electrode 5 made of ITO or the like is deposited to cover the recess 2 by a spray blating method, a CVD method, or a physical vapor deposition method (FIG. 1(C)).
あるいはレジストパターン10′を形成後にITO等を
着膜しく第1図(C−1)) 、リフトオフ法により凹
部2のみに透明電極5を形成してもよい(第1図(C−
2) )。Alternatively, after forming the resist pattern 10', ITO or the like may be deposited (FIG. 1 (C-1)), and the transparent electrode 5 may be formed only in the recess 2 by a lift-off method (FIG. 1 (C-1)).
2) ).
次に発光部材6aをスクリーン印刷またはスプレーブレ
ーティング法等により全面塗布した後(第1図(d))
、スクレッパ−11あるいは研磨等により前記凹部2
部分以外に塗布された膜を除いて発光層6を形成する(
第1図(e))。発光部材6aは、ZnS:Cu、CI
ZnS:Cu、AI ZnS:Cu、Br Z
nS:Cu。Next, after applying the light emitting member 6a to the entire surface by screen printing or spray blating method (FIG. 1(d))
, the recess 2 is removed by scraper 11 or polishing.
A light-emitting layer 6 is formed excluding the film coated on other parts (
Figure 1(e)). The light emitting member 6a is made of ZnS:Cu, CI
ZnS: Cu, AI ZnS: Cu, Br Z
nS:Cu.
Mn、CI ZnCd5:Cu、Brのいずれがの材
料若しくはこれらのうちの複数をブレンドしたものを分
級した後、アセタール樹脂、エポキシ樹脂、メチルメタ
アクリレート樹脂、ポリエステル樹脂、シアノエチルセ
ルロース樹脂、フッ素系樹脂等のバインダー材のうちい
ずれかに分散混合したものを用いる。After classifying any of Mn, CI ZnCd5: Cu, Br, or a blend of two or more of these materials, acetal resin, epoxy resin, methyl methacrylate resin, polyester resin, cyanoethyl cellulose resin, fluorine resin, etc. Use one of these binder materials dispersed and mixed.
更に、低融点ガラス、シアノエチルゼロース。Additionally, low melting point glass, cyanoethyl xerose.
フッ化ビニリデン系3元共重合体、フッ化ビニリデン−
トリフッ化エチレン共重合体、エポキシ樹脂、シリコー
ン樹脂等のいずれかの誘電体部材をスクリーン印刷また
はスプレーブレーティング法等の厚膜プロセスにより全
面塗布した後、前工程と同様にスクレッパーあるいは研
磨等により前記凹部2部分以外に塗布された膜を削り取
り誘電体層7を形成する(第1図(f))。Vinylidene fluoride terpolymer, vinylidene fluoride
After coating the entire surface with a dielectric material such as trifluoroethylene copolymer, epoxy resin, silicone resin, etc. by a thick film process such as screen printing or spray blating, the above-mentioned material is removed using a scraper or polishing as in the previous step. The film coated on areas other than the concave portions 2 is scraped off to form a dielectric layer 7 (FIG. 1(f)).
最後にA1等の金属をスプレーブレーティング法あるい
はCVD法あるいは物理蒸着法等により全面に着膜し、
透明基板1の凸部上に方形状の開口部8aが位置するよ
うにフォトリソ法によるエツチング処理によりパターニ
ングして金属電極8を形成し、各凹部2内に形成された
発光素子形成部3と前記開口部8a下方に形成された透
光部4とを交互に配置するようにする(第1図(g))
。Finally, a metal such as A1 is deposited on the entire surface by spray brating method, CVD method, physical vapor deposition method, etc.
A metal electrode 8 is formed by patterning by photolithographic etching so that a rectangular opening 8a is located above the convex portion of the transparent substrate 1, and the light emitting element forming portion 3 formed in each concave portion 2 and the above-mentioned The transparent parts 4 formed below the openings 8a are arranged alternately (FIG. 1(g))
.
第3図は上述したEL発光素子装置を画像読取装置に適
用した例を示す。FIG. 3 shows an example in which the above-described EL light emitting device is applied to an image reading device.
すなわち、上述したEL発光素子装置と受光素子アレイ
20とを透光性の接着剤50を介して一体化する。受光
素子アレイ20を構成する主走査方向に多数配設された
各受光素子20aがEL発光素子装置の透光部4の直下
に位置するようにEL発光素子装置と受光素子アレイ2
0とを接着している。受光素子アレイ20は、その長さ
が原稿幅に対応するように基板21上に形成され、各受
光素子20aは、主走査方向に離散的に形成されたクロ
ム(Cr)から成る個別電極22と、酸化インジウム・
スズ(ITO)から成る帯状の共通電極24とで、アモ
ルファスシリコン(a−5t)から成る帯状の光導電層
23を挟持した薄膜のサンドイッチ構造で構成されてい
る。また、受光素子はこれに限定されることなく、CC
D等の受光素子でもよい。That is, the above-described EL light emitting element device and the light receiving element array 20 are integrated via the transparent adhesive 50. The EL light-emitting element device and the light-receiving element array 2 are arranged so that each of the light-receiving elements 20a, which are arranged in large numbers in the main scanning direction and forming the light-receiving element array 20, is located directly below the light-transmitting section 4 of the EL light-emitting element device.
0 is glued. The light-receiving element array 20 is formed on a substrate 21 so that its length corresponds to the document width, and each light-receiving element 20a has individual electrodes 22 made of chromium (Cr) formed discretely in the main scanning direction. , indium oxide
It has a thin film sandwich structure in which a band-shaped common electrode 24 made of tin (ITO) and a band-shaped photoconductive layer 23 made of amorphous silicon (a-5t) are sandwiched. In addition, the light receiving element is not limited to this, and CC
A light receiving element such as D may also be used.
EL発光素子装置の透明電極5と金属電極8とに50〜
250v程度の交流電圧を印加すると、画電極に挟まれ
た発光層6が発光し、透明基板1上に配置された原稿面
70を照射する。原稿面70からの反射光80は、各透
光部4を通過し透光部4の直下に配置された各受光素子
20aに入射して電荷を発生させ、駆動用IC(図示せ
ず)の制御により各受光素子から信号として出力して画
像情報を得る。50~ for the transparent electrode 5 and metal electrode 8 of the EL light emitting element device
When an AC voltage of about 250 V is applied, the light-emitting layer 6 sandwiched between the picture electrodes emits light, and the document surface 70 placed on the transparent substrate 1 is irradiated. The reflected light 80 from the document surface 70 passes through each light-transmitting section 4 and enters each light-receiving element 20a arranged directly below the light-transmitting section 4 to generate electric charge, which causes a drive IC (not shown) to generate a charge. Under control, each light receiving element outputs a signal to obtain image information.
上述した実施例によれば、発光層6を透明基板1の凹部
2に形成したので、原稿面70と受光素子20aとの距
離を近づけることができ、原稿面70からの反射光80
を効率良く利用することができる。また、発光素子形成
部3と透光部4とを交互に形成して発光部分を離散的に
し、特定発光部分が特定原稿面部分を照射するようにし
たので、原稿面70を均一に照射する場合に比較して不
要な照射光を発生させない。従って、特定原稿面からの
反射光が本来入射すべき受光素子に隣接する受光素子に
入射するのを防ぎ、不要な反射光の割合を減少させて分
解能(MTF)を向上させることができる。According to the embodiment described above, since the light emitting layer 6 is formed in the recess 2 of the transparent substrate 1, the distance between the document surface 70 and the light receiving element 20a can be reduced, and the reflected light 80 from the document surface 70 can be reduced.
can be used efficiently. Furthermore, the light-emitting element forming portions 3 and the light-transmitting portions 4 are formed alternately to make the light-emitting portions discrete, and a specific light-emitting portion illuminates a specific document surface portion, so that the document surface 70 is uniformly illuminated. It does not generate unnecessary irradiation light compared to the case. Therefore, it is possible to prevent reflected light from a specific document surface from entering a light-receiving element adjacent to the light-receiving element to which it should originally enter, thereby reducing the proportion of unnecessary reflected light and improving resolution (MTF).
更に、透明基板1及び金属電極8はフォトリソ法による
エツチングを行なうが、他の着膜工程は通常の厚膜プロ
セスで形成することができるので、安価で大面積のEL
発光素子を得ることができる。Furthermore, although the transparent substrate 1 and the metal electrodes 8 are etched by photolithography, other film deposition processes can be formed by normal thick film processes, so it is possible to form an inexpensive, large-area EL.
A light emitting element can be obtained.
また、湿度に弱い発光層6を透明基板1の凹部2に埋没
させた構造とするので、外部から影響を受けにくく耐環
境に対して信頼性の高いEL発光素子とすることができ
る。Further, since the light emitting layer 6, which is sensitive to humidity, is buried in the recess 2 of the transparent substrate 1, an EL light emitting element that is less susceptible to external influences and has high reliability against environments can be obtained.
本実施例では1ラインの受光素子及びEL発光素子の例
について説明したが、例えばカラーの画像読取装置とす
る場合、上記した画像読取装置を複数ライン並設し、各
EL発光素子装置同士を主走査方向に1ビツトづつずら
し、副走査方向においても発光部と透光部が交互に配置
するようことにより副走査方向のMTFの向上を図るこ
とができる。In this embodiment, an example of one line of light receiving elements and EL light emitting elements has been described, but in the case of a color image reading device, for example, multiple lines of the image reading devices described above are arranged in parallel, and each EL light emitting device is connected to the other. The MTF in the sub-scanning direction can be improved by shifting one bit at a time in the scanning direction and by arranging the light-emitting portions and the light-transmitting portions alternately in the sub-scanning direction as well.
(発明の効果)
上述したように本発明によれば、発光層を厚膜プロセス
で着膜可能な発光素子を得ることができるので、発光素
子装置及びこれを用いた画像読取装置を安価に製造する
ことができる。また、厚膜プロセスにおいては着膜面積
を制限されることがないので、発光素子装置の大面積化
を図ることができる。更に、発光層を透明基板の凹部内
に形成するので、耐環境信頼性の高い発光素子装置を得
ることができるとともに、装置全体を薄型化することが
できる。(Effects of the Invention) As described above, according to the present invention, it is possible to obtain a light emitting element in which a light emitting layer can be deposited by a thick film process, so that a light emitting element device and an image reading device using the same can be manufactured at low cost. can do. Furthermore, in the thick film process, there is no restriction on the area of film deposition, so it is possible to increase the area of the light emitting device. Furthermore, since the light-emitting layer is formed within the recessed portion of the transparent substrate, a light-emitting element device with high environmental resistance and reliability can be obtained, and the entire device can be made thinner.
また、本発明の画像読取装置によれば、発光素子形成部
と透光部とを交互に形成して発光部分を離散的にし、特
定発光部分が特定原稿面部分を照射するようにしたので
、原稿面を均一に照射する場合に比較して不要な照射光
を発生させず、不要な反射光の割合を減少させて分解能
(MTF)を向上させることができる。Further, according to the image reading device of the present invention, the light emitting element forming portions and the light transmitting portions are formed alternately to make the light emitting portions discrete, and the specific light emitting portions illuminate a specific document surface portion. Compared to the case where the document surface is uniformly irradiated, unnecessary irradiation light is not generated, and the ratio of unnecessary reflected light can be reduced and resolution (MTF) can be improved.
第1図(a)乃至(g)は本発明の発光素子装置の製造
プロセスを示す工程図、第2図は本発明の発光素子装置
の平面説明図、第3図は第1図で得られる発光素子装置
を用いた画像読取装置の一部断面説明図、第4図は従来
の発光素子−受光素子一体型の画像読取装置の平面説明
図、第5図は第4図のv−v’線断面説明図である。
1・・・・・・透明基板
2・・・・・・凹部
3・・・・・・発光素子形成部
4・・・・・・透光部
5・・・・・・透明電極
6・・・・・・発光層
7・・・・・・誘電体層
8・・・・・・金属電極
8a・・・開口部
20・・・・・・受光素子アレイ
70・・・・・・原稿面
80・・・・・・反射光
第1
図
第2図FIGS. 1(a) to (g) are process diagrams showing the manufacturing process of the light emitting device of the present invention, FIG. 2 is an explanatory plan view of the light emitting device of the present invention, and FIG. 3 is obtained from FIG. 1. A partially cross-sectional explanatory diagram of an image reading device using a light emitting element device, FIG. 4 is a plan view explanatory diagram of a conventional image reading device of a light emitting element-light receiving element integrated type, and FIG. 5 is a diagram taken along v-v' in FIG. It is a line cross-sectional explanatory drawing. 1...Transparent substrate 2...Recessed portion 3...Light emitting element forming portion 4...Transparent portion 5...Transparent electrode 6... ...Light emitting layer 7...Dielectric layer 8...Metal electrode 8a...Opening 20...Light receiving element array 70...Document surface 80...Reflected light Figure 1 Figure 2
Claims (3)
着膜された発光層と、発光層を挾む2つの電極とを前記
各凹部内に積層し、前記発光層を2つの電極で挟む発光
素子形成部と光が透過する透光部とを交互に配置するこ
とを特徴とする発光素子装置。(1) A plurality of recesses are formed in a transparent substrate, and a light emitting layer deposited by a thick film process and two electrodes sandwiching the light emitting layer are laminated in each recess, and the light emitting layer is placed between the two electrodes. 1. A light-emitting element device characterized in that a light-emitting element forming part sandwiched between two parts and a light-transmitting part through which light passes are arranged alternately.
凹部を形成する凹部形成工程と、凹部が形成された透明
基板上に帯状の透明電極を形成する電極形成工程と、発
光粒子を分散した樹脂を厚膜プロセスで着膜して成る発
光層、該発光層上に位置する金属電極を前記凹部に積層
する発光素子形成工程と、を具備することを特徴とする
発光素子装置の製造方法。(2) A recess formation step in which a plurality of recesses are formed on a transparent substrate by photolithography, an electrode formation step in which a band-shaped transparent electrode is formed on the transparent substrate with recesses formed, and a resin in which luminescent particles are dispersed. A method for manufacturing a light emitting element device, comprising a light emitting element forming step of laminating a light emitting layer deposited by a thick film process and a metal electrode located on the light emitting layer in the recess.
て成る発光層と、発光層を挟む2つの電極とを透明基板
上に積層し、前記発光層を2つの電極で挾む発光素子形
成部と、光が透過する透光部とを受光素子アレイの主走
査方向に交互に設け、該透光部に対応する位置に各受光
素子を配設し、前記発光素子形成部から発光した光が透
明基板の反発光素子側に配置された原稿面で反射し、反
射光が前記透光部を透過して前記受光素子に入射するこ
とを特徴とする画像読取装置。(3) A light emitting layer formed by depositing a resin in which luminescent particles are dispersed in a thick film process and two electrodes sandwiching the light emitting layer are laminated on a transparent substrate, and the light emitting layer is sandwiched between the two electrodes. Element forming parts and light transmitting parts through which light passes are provided alternately in the main scanning direction of the light receiving element array, each light receiving element is arranged at a position corresponding to the light transmitting part, and light is emitted from the light emitting element forming part. The image reading device is characterized in that the reflected light is reflected on a document surface disposed on a side of a repulsion light element of a transparent substrate, and the reflected light is transmitted through the light transmitting portion and enters the light receiving element.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14129790A JPH0693726B2 (en) | 1990-06-01 | 1990-06-01 | Light emitting device, method for manufacturing light emitting device, and image reading device |
US08/080,587 US5479070A (en) | 1990-05-18 | 1993-06-24 | Light-emitting element device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14129790A JPH0693726B2 (en) | 1990-06-01 | 1990-06-01 | Light emitting device, method for manufacturing light emitting device, and image reading device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0437248A true JPH0437248A (en) | 1992-02-07 |
JPH0693726B2 JPH0693726B2 (en) | 1994-11-16 |
Family
ID=15288609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14129790A Expired - Fee Related JPH0693726B2 (en) | 1990-05-18 | 1990-06-01 | Light emitting device, method for manufacturing light emitting device, and image reading device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0693726B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002198167A (en) * | 2000-12-25 | 2002-07-12 | Seiko Epson Corp | Illumination device and its manufacturing method, display device and electronic apparatus |
JP2009224304A (en) * | 2008-03-17 | 2009-10-01 | Shi-Chiun Chen | Micro-hole substrate and manufacturing method therefor |
-
1990
- 1990-06-01 JP JP14129790A patent/JPH0693726B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002198167A (en) * | 2000-12-25 | 2002-07-12 | Seiko Epson Corp | Illumination device and its manufacturing method, display device and electronic apparatus |
JP2009224304A (en) * | 2008-03-17 | 2009-10-01 | Shi-Chiun Chen | Micro-hole substrate and manufacturing method therefor |
Also Published As
Publication number | Publication date |
---|---|
JPH0693726B2 (en) | 1994-11-16 |
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