JP2658421B2 - Image reading device - Google Patents
Image reading deviceInfo
- Publication number
- JP2658421B2 JP2658421B2 JP1229341A JP22934189A JP2658421B2 JP 2658421 B2 JP2658421 B2 JP 2658421B2 JP 1229341 A JP1229341 A JP 1229341A JP 22934189 A JP22934189 A JP 22934189A JP 2658421 B2 JP2658421 B2 JP 2658421B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- light emitting
- image reading
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はファクシミリやスキャナ等に用いられる画像
読取装置に係り、特に高輝度なEL発光素子を有する画像
読取装置に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image reading device used for a facsimile, a scanner, and the like, and particularly to an image reading device having a high-luminance EL light emitting element.
（従来の技術） 従来のファクシミリやスキャナ等には、光源としてEL
発光素子を用いるものがあり、特に、EL発光素子と密着
型イメージセンサとを一体化した超小型の画像読取装置
が提案されている。(Conventional technology) EL is used as a light source for conventional facsimile machines and scanners.
Some light emitting devices are used. In particular, an ultra-small image reading device in which an EL light emitting device and a contact image sensor are integrated has been proposed.
この画像読取装置は、例えば第５図に示すように、ガ
ラス、セラミック等から成る基板１上に形成された受光
素子２と、ガラス等の透明部材から成るEL基板11上に形
成されたEL発光素子４とを、透明かつ絶縁性の接着剤
（接着層３）で結合させて構成されるもので、図の左右
方向（主走査方向）に長尺状に形成されている。This image reading apparatus includes, as shown in FIG. 5, for example, a light receiving element 2 formed on a substrate 1 made of glass, ceramic or the like, and an EL light emission formed on an EL substrate 11 made of a transparent member such as glass. The element 4 is formed by bonding with a transparent and insulating adhesive (adhesive layer 3), and is formed to be long in the left-right direction (main scanning direction) in the figure.
受光素子２は、基板１上に第５図の左右方向に複数配
列されるようクロム（Cr）等で形成された個別電極21
と、アモルファスシリコン（ａ−Si）で形成された光導
電層22と、酸化インジウム・スズ（ITO）で形成された
透明電極23とから成る。The light receiving elements 2 are formed on the substrate 1 by individual electrodes 21 formed of chromium (Cr) or the like so as to be arranged in a plurality in the horizontal direction of FIG.
And a photoconductive layer 22 formed of amorphous silicon (a-Si) and a transparent electrode 23 formed of indium tin oxide (ITO).
EL発光素子４は、EL基板11上にITO、In2O3、SnO2等か
ら構成される透明電極41と、Y2O3、Si3N4、BaTiO3等か
ら成る絶縁層42と、ZnS:Mn等から成る発光層43と、同上
の絶縁層42と、アルミニウム（Al）等の金属から成る不
透明電極44とを順次積層して成る。透明電極41と不透明
電極44との間に電圧をかけると、その間で挾持された発
光層43から光が放射され、透明電極41を透過して原稿10
0に照射される。つまり、発光層43からの光が透明電極4
1の表面側から放射されることになる。The EL light emitting element 4 includes a transparent electrode 41 made of ITO, In 2 O 3 , SnO 2 and the like on an EL substrate 11, an insulating layer 42 made of Y 2 O 3 , Si 3 N 4 , BaTiO 3 and the like, A light emitting layer 43 made of ZnS: Mn or the like, an insulating layer 42 of the same, and an opaque electrode 44 made of a metal such as aluminum (Al) are sequentially laminated. When a voltage is applied between the transparent electrode 41 and the opaque electrode 44, light is emitted from the light emitting layer 43 sandwiched between the transparent electrode 41 and the opaque electrode 44, and the light passes through the transparent electrode 41 and passes through the original 10
Irradiated to zero. That is, the light from the light emitting layer 43 is
It will be radiated from the surface side of 1.
前記不透明電極44には、受光素子２の各受光部分に対
応するよう方形状の光透過窓45が開口され、発光層43か
ら発光した光が原稿100で反射し、その反射光が光透過
窓45を通過して受光素子２の受光部分へ照射するような
構成となっている（特開昭59−210664号公報参照）。In the opaque electrode 44, a rectangular light transmitting window 45 is opened so as to correspond to each light receiving portion of the light receiving element 2, light emitted from the light emitting layer 43 is reflected by the original 100, and the reflected light is reflected by the light transmitting window. It is configured to irradiate the light-receiving portion of the light-receiving element 2 through the light-receiving portion 45 (see JP-A-59-210664).
（発明が解決しようとする課題） しかしながら、上記のような画像読取装置の構成で
は、EL発光素子４の発光層43からの発光光が透明電極41
の表面側から放射され、原稿100を照射して反射し、光
透過窓45を透過して受光素子２の各受光部分に入射する
構成になっているが、特定の原稿部分に照射された光が
当該原稿部分の直下にある受光素子に入射するとは限ら
ず、隣接する受光素子に反射光が入射する場合もあっ
た。例えば、第５図に示すように、発光光ｘのようにそ
の反射光が原稿100の真下の受光素子に入射するものも
あるが、発光光ｙのようにその反射光が隣接する受光素
子に入射するものもあった。そうなると、受光素子にお
ける正確な読み取りができなくなり、結果として画像読
取装置の分解能（MTF）が低下するとの問題点があっ
た。(Problems to be Solved by the Invention) However, in the configuration of the image reading apparatus as described above, the light emitted from the light emitting layer 43 of the EL light emitting element 4 is transmitted by the transparent electrode 41.
The light is emitted from the front side of the light source, irradiates and reflects the original 100, passes through the light transmission window 45, and enters each light receiving portion of the light receiving element 2. Is not always incident on the light receiving element immediately below the original portion, and the reflected light sometimes enters the adjacent light receiving element. For example, as shown in FIG. 5, there is a type in which reflected light such as emitted light x is incident on a light receiving element directly below the document 100, but such reflected light is emitted to an adjacent light receiving element such as emitted light y. Some were incident. Then, there is a problem that accurate reading by the light receiving element cannot be performed, and as a result, the resolution (MTF) of the image reading device is reduced.
本発明は上記実情に鑑みてなされたもので、画像読取
装置において、反射光が隣接する受光素子に入射する割
合を減らし、受光素子における正確な読み取りができる
ようにし、画像読取装置における分解能（MTF）の向上
を図る画像読取装置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and in an image reading apparatus, the ratio of reflected light incident on an adjacent light receiving element is reduced to enable accurate reading of the light receiving element, and the resolution (MTF) in the image reading apparatus is reduced. It is an object of the present invention to provide an image reading device which improves the image reading device.
（課題を解決するための手段） 上記従来例の問題点を解決するため本発明は、第１の
基板上に形成された受光素子と、第２の基板上に光透過
窓を有する不透明電極を具備するEL発光素子とを絶縁接
着層を介して接合し、前記EL発光素子から発光された光
が反受光素子側に配置された原稿の面で反射して反射光
となり、当該反射光を前記光透過窓を通して前記受光素
子に導く画像読取装置において、前記光透過窓の周辺部
分を除いた前記EL発光素子の一部を非発光部としたこと
を特徴としている。(Means for Solving the Problems) In order to solve the problems of the above conventional example, the present invention provides a light receiving element formed on a first substrate and an opaque electrode having a light transmitting window on a second substrate. The provided EL light emitting element is joined via an insulating adhesive layer, and the light emitted from the EL light emitting element is reflected on the surface of the document arranged on the side opposite to the light receiving element to become reflected light, and the reflected light is converted into the reflected light. In the image reading device for guiding the light receiving element through the light transmitting window, a part of the EL light emitting element excluding a peripheral portion of the light transmitting window is a non-light emitting portion.
（作用） 本発明によれば、EL発光素子の光透過窓の周辺部分を
除いた発光部分を非発光部分としたので、光透過窓周辺
部分のEL発光素子から発光光が放射され、光透過窓上部
の原稿を中心に照射し、その反射光の多くが原稿直下の
受光素子に入射することとなり、更にEL発光素子上面か
らの発光光の発光を特定原稿領域に限定しているため、
不要な発光によって起こる隣接する受光素子に入射する
反射光の割合を減らすことができる。(Operation) According to the present invention, the light emitting portion excluding the light transmitting window peripheral portion of the EL light emitting device is made a non-light emitting portion, so that the EL light emitting device around the light transmitting window emits emitted light, Since the document at the top of the window is illuminated at the center, most of the reflected light will be incident on the light receiving element directly under the document, and furthermore, the emission of the light emitted from the upper surface of the EL light emitting element is limited to a specific document area,
It is possible to reduce the ratio of reflected light incident on an adjacent light receiving element caused by unnecessary light emission.
（実施例） 本発明の一実施例について図面を参照しながら説明す
る。(Example) An example of the present invention will be described with reference to the drawings.
第１図は、本発明の一実施例に係る画像読取装置全体
の断面説明図を示す。第５図と同様の構成をとる部分に
ついては同一の符号を付している。FIG. 1 is a sectional explanatory view of an entire image reading apparatus according to an embodiment of the present invention. Parts having the same configuration as in FIG. 5 are denoted by the same reference numerals.
実施例の画像読取装置の構成は、ガラス、セラミック
等から成る基板１上に形成された受光素子２とガラス等
から成るEL基板11上に形成されたEL発光素子４とを、透
明かつ絶縁性の接着剤（接着層３）で結合させるもので
ある。The configuration of the image reading apparatus according to the embodiment is such that a light receiving element 2 formed on a substrate 1 made of glass, ceramic or the like and an EL light emitting element 4 formed on an EL substrate 11 made of glass or the like are transparent and insulating. (The adhesive layer 3).
受光素子２の構成は、基板１上にクロム（Cr）等の金
属から成る個別電極21が形成され、その上にアモルファ
スシリコン（ａ−Si）から成る光導電層22が形成され、
さらにその上に酸化インジウム・スズ（ITO）から成る
透明電極23が形成される。The light receiving element 2 is configured such that an individual electrode 21 made of a metal such as chromium (Cr) is formed on a substrate 1, and a photoconductive layer 22 made of amorphous silicon (a-Si) is formed thereon.
Further, a transparent electrode 23 made of indium tin oxide (ITO) is formed thereon.
尚、ここでは下部の個別電極21は主走査方向に離散的
に分割して形成され、透明電極23は帯状の共通電極とな
るよう形成されることにより、光導電層22を個別電極21
と透明電極23とで挾んだ部分が各受光素子２を構成し、
その集まりが受光素子アレイを形成している。また、離
散的に分割形成された個別電極21の端部は駆動用IC（図
示せず）に接続され、受光素子２で生成される電荷を抽
出するようになっている。また、受光素子２において、
アモルファスシリコンの代わりに、CdSe（カドミウムセ
レン）等を光導電層３とすることも可能である。Here, the lower individual electrode 21 is discretely formed in the main scanning direction, and the transparent electrode 23 is formed so as to be a strip-shaped common electrode.
And the transparent electrode 23 constitute each light receiving element 2.
The collection forms a light receiving element array. In addition, the ends of the discretely formed individual electrodes 21 are connected to a driving IC (not shown) so as to extract electric charges generated by the light receiving element 2. In the light receiving element 2,
Instead of amorphous silicon, CdSe (cadmium selenium) or the like can be used as the photoconductive layer 3.
EL発光素子４は、EL基板11上にITO、In2O3、SnO3等か
ら成る透明電極41が形成され、その上にSi3N4、SiO2、Y
2O3等から成る絶縁層42と、次ぎにZnS:Mn等から成る発
光層43が形成され、またその上に絶縁層42と、アルミニ
ウム（Al）等の金属から成る不透明電極44を順次積層し
ている。In the EL light emitting element 4, a transparent electrode 41 made of ITO, In 2 O 3 , SnO 3 or the like is formed on an EL substrate 11, and Si 3 N 4 , SiO 2 , Y
An insulating layer 42 made of 2 O 3 and the like, and a light emitting layer 43 made of ZnS: Mn and the like are formed next, and an insulating layer 42 and an opaque electrode 44 made of a metal such as aluminum (Al) are sequentially laminated thereon. doing.
前記不透明電極44には、受光素子２の各受光部分に対
応するよう方形状の光透過窓45が開口され、発光層43か
らの発光光が原稿100に反射し、その反射光が光透過窓4
5を通過して受光素子２の受光部分に入射するような構
成となっている。また、光透過窓45と隣の光透過窓45と
の間の不透明電極44部分の上部に配置された透明電極41
の一部を除去して、非発光部46を形成する。第２図に第
１図の透明電極パターンの平面説明図を示すように、当
該透明電極41の除去された形状を方形状とする。つま
り、第２図のような構成にすることによって光透過窓45
の周辺部分から発光光が発光することとなり、光透過窓
45と光透過窓45の間の発光素子の中央部分から発光させ
ないようにしたものである。。In the opaque electrode 44, a rectangular light transmission window 45 is opened to correspond to each light receiving portion of the light receiving element 2, light emitted from the light emitting layer 43 is reflected on the original 100, and the reflected light is transmitted through the light transmission window. Four
It is configured to pass through 5 and enter the light receiving portion of the light receiving element 2. In addition, the transparent electrode 41 disposed above the opaque electrode 44 between the light transmitting window 45 and the adjacent light transmitting window 45
Is removed to form a non-light emitting portion 46. As shown in FIG. 2 which is a plan view of the transparent electrode pattern shown in FIG. 1, the shape of the transparent electrode 41 from which the transparent electrode 41 has been removed is rectangular. In other words, by adopting the configuration shown in FIG.
Light is emitted from the surrounding area of the light transmission window.
Light is not emitted from the central portion of the light emitting element between the light transmission window 45 and the light transmission window 45. .
更に、画像読取装置は、上記受光素子２の上に上記EL
発光素子４をEL基板11が外側になるよう透明かつ絶縁性
の接着層３で結合すし、受光素子２とEL発光素子４とを
電気的に絶縁している。Further, the image reading device includes the EL device on the light receiving element 2.
The light emitting element 4 is bonded to the EL substrate 11 with a transparent and insulating adhesive layer 3 so that the EL substrate 11 is located outside, and the light receiving element 2 and the EL light emitting element 4 are electrically insulated.
次に、この画像読取装置の製造方法について説明す
る。Next, a method for manufacturing the image reading device will be described.
この画像読取装置は、受光素子２部分とEL発光素子４
部分をそれぞれ別々に作製し、これらを接合して形成す
るものである。This image reading device includes a light receiving element 2 and an EL light emitting element 4
The parts are separately produced, and are formed by joining them.
まず、受光素子２の製造方法は、ガラスまたはセラミ
ック等で形成された基板１上の全面にクロム（Cr）を着
膜し、この上にレジスタを塗布する。マスクパターンを
用いて前記レジスタを露光、現像してレジスタパターン
を形成し、エッチングした後にレジストパターンを除去
して下部電極となる個別電極21を形成する。そして、Ｐ
−CVD法によりアモルファスシリコンを着膜し、フォト
リソ法によるCF4等を用いたプラズマエッチング、また
はメタルマスクによるパターニング蒸着により前記個別
電極21の先端部分を覆う帯状の光導電層22を形成する。
次に、スパッタリング法により酸化インジウム・スズ
（ITO）を着膜し、フォトリソ法による混酸を用いたウ
エットエッチングにより前記個別電極21の先端部分を覆
い、ａ−Siの光導電層22を挟むよう受光素子２の透明電
極23を形成する。First, in the method for manufacturing the light receiving element 2, chromium (Cr) is deposited on the entire surface of the substrate 1 formed of glass or ceramic or the like, and a resistor is applied thereon. The register is exposed and developed using a mask pattern to form a register pattern, and after etching, the resist pattern is removed to form an individual electrode 21 serving as a lower electrode. And P
The amorphous silicon was film deposited by -CVD method, plasma etching, or to form a strip of the photoconductive layer 22 which covers the front end portion of the individual electrode 21 by patterning deposition by metal mask with CF 4 or the like by the photolithography method.
Next, a film of indium tin oxide (ITO) is deposited by a sputtering method, and the tip portion of the individual electrode 21 is covered by wet etching using a mixed acid by a photolithographic method, and light is received so as to sandwich the photoconductive layer 22 of a-Si. The transparent electrode 23 of the element 2 is formed.
次に、EL発光素子４の製造方法を説明する。ガラス等
で形成したEL基板11の上に透明電極41としてITO等を真
空蒸着またはスパッタリング等により着膜し、フォトリ
ソ法によりパターニングして、第２図に示すような透明
電極パターンを形成する。この時同時に、非発光部46も
形成される。つまり、非発光部46は、フォトリソ法によ
りフォトリソマスクを用いて透明電極41の特定部分を露
光・現像して除去して形成するものである。非発光部46
は、光透過窓45の間の不透明電極44の上部中央に設けら
れ、光透過窓45の周辺には設けない。これにより、光透
過窓45の周辺から発光光が発光することになる。Next, a method for manufacturing the EL light emitting element 4 will be described. A transparent electrode 41 is deposited as a transparent electrode 41 on the EL substrate 11 made of glass or the like by vacuum evaporation or sputtering, and is patterned by a photolithography method to form a transparent electrode pattern as shown in FIG. At this time, a non-light emitting portion 46 is also formed at the same time. In other words, the non-light-emitting portion 46 is formed by exposing and developing a specific portion of the transparent electrode 41 by using a photolithographic mask by a photolithographic method and removing it. Non-light-emitting part 46
Is provided at the center of the upper portion of the opaque electrode 44 between the light transmitting windows 45, and is not provided around the light transmitting window 45. As a result, light is emitted from the periphery of the light transmission window 45.
次に透明電極41上に絶縁層42として、Si3N4、SiO2、Y
2O3などを着膜し、絶縁層42上にスパッタ法、電子ビー
ム法等でZnS:Mn等を着膜して帯状の発光層43を形成し、
再度前記同様の絶縁層42を発光層43上に形成し、当該絶
縁層42上にアルミニウム等の金属を蒸着し、フォトリソ
法によりパターニングして光透過窓45を有する不透明電
極44を形成し、EL発光素子４が作製される。Next, as an insulating layer 42 on the transparent electrode 41, Si 3 N 4 , SiO 2 , Y
2 O 3 or the like is deposited, and a band-shaped light emitting layer 43 is formed by depositing ZnS: Mn or the like on the insulating layer 42 by a sputtering method, an electron beam method, or the like,
Again, the same insulating layer 42 is formed on the light emitting layer 43, a metal such as aluminum is deposited on the insulating layer 42, and patterned by a photolithography method to form an opaque electrode 44 having a light transmitting window 45. The light emitting element 4 is manufactured.
以上のように作製した受光素子２とEL発光素子４を絶
縁性の透明な接着層３を介して接着する。この場合、受
光素子２の受光部分の真上に光透過窓45が配置されるよ
うにする。The light-receiving element 2 and the EL light-emitting element 4 manufactured as described above are adhered via an insulating transparent adhesive layer 3. In this case, the light transmission window 45 is arranged directly above the light receiving portion of the light receiving element 2.
次に、本発明に係る一実施例の画像読取装置の駆動方
法について説明すると、EL発光素子４において、透明電
極41と不透明電極44の両電極に±150〜250V程度の両極
性パルスを印加すると、透明電極41と不透明電極44に挟
まれた発光層43からEL発光光が発光する。従って、透明
電極41が形成されていない非発光部からは発光が起こら
ず、主に光透過窓45の周辺部分から発光することとな
る。EL発光素子２の光透過窓45の周辺部から上方向に放
射された発光光は、EL基板11上の原稿100を照射し、そ
の反射光が光透過窓45を透過して、受光素子２の受光部
分に入射する。すると、受光素子２が光に反応して電荷
を発生させ、駆動用ICの制御によって画情報を信号とし
て出力する。Next, a driving method of the image reading apparatus according to one embodiment of the present invention will be described. In the EL light emitting device 4, when a bipolar pulse of about ± 150 to 250 V is applied to both the transparent electrode 41 and the opaque electrode 44. The EL light is emitted from the light emitting layer 43 interposed between the transparent electrode 41 and the opaque electrode 44. Therefore, light emission does not occur from the non-light emitting portion where the transparent electrode 41 is not formed, and light is emitted mainly from the peripheral portion of the light transmitting window 45. The emitted light emitted upward from the periphery of the light transmitting window 45 of the EL light emitting element 2 irradiates the original 100 on the EL substrate 11, and the reflected light passes through the light transmitting window 45, and the light receiving element 2 Incident on the light receiving portion. Then, the light receiving element 2 generates a charge in response to the light, and outputs image information as a signal under the control of the driving IC.
本実施例では、非発光部46形成のため、透明電極41の
一部をフォトリソ法のパターニングで除去したが、第３
図の画像読取装置の断面説明図に示すように、発光層43
の一部をフォトリソ法のパターニングで除去しても同様
の効果が得られる。さらに、透明電極41と発光層43の両
方を部分的に除去して非発光部を形成しても構わない。
また、光透過窓45の形状を方形としたが、円形、楕円形
等でも構わない。また、第２図に示した通り、非発光部
を長方形としたが、正方形、円形または楕円形等の形状
であっても構わない。更に、本実施例では、主走査方向
に離散的に分割して非発光部を形成したが、副走査方向
に形成することにより、副走査方向のMTF向上を図るこ
とができる。従って、例えば、第４図に示すような透明
電極のパターンのように、主走査方向と副走査方向につ
いての非発光部を組み合わせて、光透過窓45を取り囲む
ようなドーナツ状にて非発光部を形成すれば、主・副両
走査方向のMTF向上を図ることができる。In the present embodiment, in order to form the non-light emitting portion 46, a part of the transparent electrode 41 was removed by patterning by the photolithography method.
As shown in the cross-sectional explanatory view of the image reading device shown in FIG.
The same effect can be obtained by removing a part of the substrate by photolithography patterning. Further, both the transparent electrode 41 and the light emitting layer 43 may be partially removed to form a non-light emitting portion.
Further, the shape of the light transmitting window 45 is square, but may be circular, elliptical, or the like. Although the non-light-emitting portion is rectangular as shown in FIG. 2, it may be square, circular or elliptical. Further, in the present embodiment, the non-light-emitting portion is formed discretely in the main scanning direction, but by forming the non-light-emitting portion in the sub-scanning direction, the MTF in the sub-scanning direction can be improved. Therefore, for example, as shown in a transparent electrode pattern shown in FIG. 4, non-light emitting portions in the main scanning direction and the sub-scanning direction are combined to form a donut-shaped non-light emitting portion surrounding the light transmitting window 45. Is formed, the MTF in both the main and sub scanning directions can be improved.
本実施例によれば、光透過窓45部分を除いて、EL発光
素子４の透明電極41の一部または発光層43の一部、若し
くはその両部分を形成しないことにより非発光部46と
し、光透過窓45の周辺から発光光が上方向へ放射するよ
うにしたので、発光光が光透過窓45上部の原稿100を中
心に照射し、その反射光の多くが原稿100直下の受光素
子に入射することになる。また、第５図の従来例で示し
た隣接受光素子に反射光が入射する発光光ｙが本実施例
では非発光部46によって発生することなく、反射光が隣
接する受光素子に入射する割合を減らすことができ、受
光素子における正確な読み取りができるようになり、画
像読取装置における分解能（MTF）の向上を図ることが
できる。According to this embodiment, a part of the transparent electrode 41 of the EL light emitting element 4, a part of the light emitting layer 43, or both of them are not formed except for the light transmitting window 45 part, thereby forming the non-light emitting part 46, Since the emitted light is radiated upward from the periphery of the light transmitting window 45, the emitted light irradiates the center of the original 100 above the light transmitting window 45, and most of the reflected light is transmitted to the light receiving element immediately below the original 100. Will be incident. Further, in the present embodiment, the ratio of the reflected light incident on the adjacent light receiving element without the emitted light y having the reflected light incident on the adjacent light receiving element shown in the conventional example of FIG. As a result, accurate reading by the light receiving element can be performed, and the resolution (MTF) of the image reading device can be improved.
（発明の効果） 本発明によれば、EL発光素子における光透過窓間の発
光部分の一部を非発光部とすることで、発光光を主にEL
発光素子の光透過窓の周辺部より上方向に放射するよう
にしたので、発光光が光透過窓上部の原稿を中心に照射
し、その反射光が原稿直下の受光素子に入射し、また発
光部分を限定しているため、原稿面を均一に照射する場
合よりも不要な照射光を発生させず、従って隣接する受
光素子に入射する不要な反射光の割合を減らすことがで
き、受光素子における正確な読み取りができるようにな
り、画像読取装置における分解能（MTF）の向上を図る
ことができる画像読取装置を提供できる効果がある。(Effects of the Invention) According to the present invention, a part of the light emitting portion between the light transmitting windows in the EL light emitting element is made to be a non-light emitting portion, so that the emitted light is mainly EL
Since the light is emitted upward from the periphery of the light transmission window of the light emitting element, the emitted light illuminates the document above the light transmission window at the center, and the reflected light is incident on the light receiving element immediately below the document, and the light is emitted. Since the portion is limited, unnecessary irradiation light is not generated as compared with the case where the document surface is uniformly irradiated, and therefore, the ratio of unnecessary reflected light incident on the adjacent light receiving element can be reduced. It is possible to provide an image reading device capable of performing accurate reading and improving the resolution (MTF) of the image reading device.
【図面の簡単な説明】 第１図は本発明の一実施例の画像読取装置の断面説明
図、第２図は第１図の透明電極パターンの平面説明図、
第３図は別の実施例の画像読取装置の断面説明図、第４
図は別の実施例の透明電極パターンの平面説明図、第５
図は従来の画像読取装置の断面説明図である。 １……基板 11……EL基板 ２……受光素子 21……個別電極 22……光導電層 23……透明電極 ３……接着層 ４……EL発光素子 41……透明電極 42……絶縁層 43……発光層 44……不透明電極 45……光透過窓 46……非発光部 100……原稿BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional explanatory view of an image reading apparatus according to an embodiment of the present invention, FIG. 2 is a plan explanatory view of a transparent electrode pattern of FIG.
FIG. 3 is an explanatory sectional view of an image reading apparatus of another embodiment, and FIG.
The figure is an explanatory plan view of a transparent electrode pattern of another embodiment, and FIG.
FIG. 1 is an explanatory sectional view of a conventional image reading apparatus. DESCRIPTION OF SYMBOLS 1 ... Substrate 11 ... EL substrate 2 ... Light receiving element 21 ... Individual electrode 22 ... Photoconductive layer 23 ... Transparent electrode 3 ... Adhesive layer 4 ... EL light emitting element 41 ... Transparent electrode 42 ... Insulation Layer 43 Light-emitting layer 44 Opaque electrode 45 Light-transmitting window 46 Non-light-emitting area 100 Original
Claims (1)
２の基板上に光透過窓を有する不透明電極を具備するEL
発光素子とを絶縁接着層を介して接合し、前記EL発光素
子から発光された光が反受光素子側に配置された原稿の
面で反射して反射光となり、当該反射光を前記光透過窓
を通して前記受光素子に導く画像読取装置において、 前記光透過窓の周辺部分を除いた前記EL発光素子の一部
を非発光部としたことを特徴とする画像読取装置。1. An EL comprising a light receiving element formed on a first substrate and an opaque electrode having a light transmitting window on a second substrate.
A light emitting element is bonded to the light emitting element via an insulating adhesive layer, and light emitted from the EL light emitting element is reflected on a surface of a document arranged on the side opposite to the light receiving element to become reflected light, and the reflected light is transmitted to the light transmitting window. An image reading device that guides the light-receiving element through the light-emitting element, wherein a part of the EL light-emitting element excluding a peripheral portion of the light transmission window is a non-light-emitting portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1229341A JP2658421B2 (en) | 1989-09-06 | 1989-09-06 | Image reading device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1229341A JP2658421B2 (en) | 1989-09-06 | 1989-09-06 | Image reading device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0393345A JPH0393345A (en) | 1991-04-18 |
| JP2658421B2 true JP2658421B2 (en) | 1997-09-30 |
Family
ID=16890644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1229341A Expired - Lifetime JP2658421B2 (en) | 1989-09-06 | 1989-09-06 | Image reading device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2658421B2 (en) |
-
1989
- 1989-09-06 JP JP1229341A patent/JP2658421B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0393345A (en) | 1991-04-18 |
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