JPH02174161A - Image readout device - Google Patents

Image readout device

Info

Publication number
JPH02174161A
JPH02174161A JP63326271A JP32627188A JPH02174161A JP H02174161 A JPH02174161 A JP H02174161A JP 63326271 A JP63326271 A JP 63326271A JP 32627188 A JP32627188 A JP 32627188A JP H02174161 A JPH02174161 A JP H02174161A
Authority
JP
Japan
Prior art keywords
light
emitting element
receiving element
photodetector
shielding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63326271A
Other languages
Japanese (ja)
Inventor
Masao Funada
雅夫 舟田
Kiichi Yamada
紀一 山田
Kazuhisa Ando
和久 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP63326271A priority Critical patent/JPH02174161A/en
Publication of JPH02174161A publication Critical patent/JPH02174161A/en
Pending legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To shut off unnecessary reflected light which is incident on individual picture elements by using a light-shielding layer and to enhance a resolving power of a photodetector by a method wherein the light-shielding layer is laid between an EL light-emitting element and the photodetector. CONSTITUTION:An EL light-emitting element 4 provided with a metal electrode 44 and a photodetector 2 are arranged and installed via an insulating layer 42; a light-incident window 6 which is used to guide reflected light alpha1 from a manuscript 100 arranged on the side of a transparent electrode 41 of the EL light-emitting element 4 to the photodetector 2 is installed at the metal electrode 44. A light-shielding layer 12 provided with a window part 11 transmitting the reflected light alpha1 from the manuscript 100 facing the photodetector 2 is laid between the EL light-emitting element 4 and the photodetector 2; light alpha2 from parts other than the manuscript 100 corresponding to individual picture elements 21 of the photodetector 2 is shut off by the light-shielding layer 12 in order to prevent the light from being incident on the photodetector 2. Thereby, a resolving power of an image readout operation is enhanced.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はファクシミリやスキャナ等に用いられる画像読
取装置に係り、特に分解能を向上させるためのEL発光
素子の構造に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an image reading device used in a facsimile, scanner, etc., and particularly relates to the structure of an EL light emitting element for improving resolution.

(従来の技術) 従来、ファクシミリやスキャナ等には、蛍光灯光源とイ
メージセンサと原稿からの反射光をイメージセンサに結
像させる光学系とから成り、原稿からの濃度に応じた反
射光による光信号を電気信号として直線状に配置した受
光素子アレイに電気的走査によって蓄積し、この電気信
号を時系列的に出力する画像読取装置が用いられいる。
(Prior Art) Conventionally, facsimile machines, scanners, etc., consist of a fluorescent light source, an image sensor, and an optical system that focuses the reflected light from the original onto the image sensor. 2. Description of the Related Art An image reading device is used that stores signals as electrical signals in a linearly arranged light receiving element array by electrical scanning and outputs the electrical signals in time series.

この画像読取装置によれば、光学系としてロッドレンズ
アレイ等を使用するので装置の小型化が困難であるとい
う欠点があった。
This image reading device has the disadvantage that it is difficult to miniaturize the device because it uses a rod lens array or the like as an optical system.

そこで、光源としてEL発光素子を用い、EL発光素子
と密着型イメージセンサとを一体化した超小型の画像読
取装置が提案されている。
Therefore, an ultra-compact image reading device has been proposed that uses an EL light emitting element as a light source and integrates the EL light emitting element and a contact type image sensor.

この画像読取装置は、例えば第6図(a>(b)に示す
ように、ガラス、セラミック等で形成さ、れな基板1と
、この基板1上に複数の画素21から成る受光素子アレ
イ2と、この受光素子アレイ2を覆うように形成された
透明絶縁層3と、前記透明絶縁層3上に配置されたEL
発光素子4とから構成される。
For example, as shown in FIG. 6 (a>(b)), this image reading device includes a thin substrate 1 made of glass, ceramic, etc., and a light-receiving element array 2 formed of a plurality of pixels 21 on the substrate 1. , a transparent insulating layer 3 formed to cover the light receiving element array 2, and an EL layer disposed on the transparent insulating layer 3.
It is composed of a light emitting element 4.

EL発光素子4は、透明電極41.絶縁層42゜発光層
43.絶縁層42.金属電極44を透明基板5上に順次
積層して成る。金属電極44には、受光素子アレイ2の
各画素子21上に対応する方形状あるいは円形、楕円形
等の光入射窓6が開口され、発光層43から発光した光
が原稿100で反射し、反射光が画素21へ照射するよ
うに構成している。
The EL light emitting element 4 includes a transparent electrode 41. Insulating layer 42° Light emitting layer 43. Insulating layer 42. The metal electrode 44 is sequentially laminated on the transparent substrate 5. The metal electrode 44 has a rectangular, circular, elliptical, etc. light incident window 6 opened corresponding to each pixel 21 of the light receiving element array 2, and the light emitted from the light emitting layer 43 is reflected by the original 100. The configuration is such that the reflected light irradiates the pixels 21.

(発明が解決しようとする課題) しかしながら上述した画像読取装置の構造によると、受
光素子アレイ2の画素21には、原稿100からの反射
光α1反射光αが金属電極44の背面で反射することに
よって生じる多重反射光βが照射される。従って、画素
21では、これらの光の総光量に対して電荷を蓄積する
ので、画素21から出力される電気信号には不要な光に
よるものを含むこととなり、受光素子の分解能(MTF
>の低下をまねくという問題点があった。
(Problem to be Solved by the Invention) However, according to the structure of the image reading device described above, the reflected light α1 from the original 100 is reflected on the back surface of the metal electrode 44 at the pixel 21 of the light receiving element array 2. The multiple reflected light β generated by this is irradiated. Therefore, since the pixel 21 accumulates charge for the total amount of light, the electrical signal output from the pixel 21 includes unnecessary light, and the resolution of the light receiving element (MTF
There was a problem that this resulted in a decrease in

本発明は上記実情に鑑みてなされたもので、EL発光素
子と密着型イメージセンサとを一体化して小型化を図り
つつ、画像読み収りの分解能の向上を図ることができる
画像読取装置を提供することを目的とする。
The present invention has been made in view of the above circumstances, and provides an image reading device that can integrate an EL light emitting element and a contact type image sensor to achieve miniaturization and improve the resolution of image reading. The purpose is to

(課題を解決するための手段) 上記従来例の問題点を解消するなめ本発明の画像読取装
置は、次の構成を特徴としている。
(Means for Solving the Problems) The image reading device of the present invention, which solves the problems of the conventional example described above, is characterized by the following configuration.

少なくとも金属電極を有するEL発光素子と受光素子と
を絶縁層を介して配設する。
An EL light emitting element having at least a metal electrode and a light receiving element are disposed with an insulating layer interposed therebetween.

BL発光素子の透明電極側に配置された原稿がらの反射
光を前記受光素子へ導くための光入射窓を前記金属電極
に設ける。
A light entrance window is provided on the metal electrode for guiding reflected light from a document placed on the transparent electrode side of the BL light emitting element to the light receiving element.

前記受光素子に対面した原稿からの反射光を透過する窓
部を有した遮光層を、前記EL発光素子と受光素子との
間に介在させ葛。
A light-shielding layer having a window portion that transmits reflected light from a document facing the light-receiving element is interposed between the EL light-emitting element and the light-receiving element.

(作用) 本発明によれば、ELQ光素子と受光素子との間に遮光
層を介在させたので、受光素子の各画素上に対応する原
稿以外からの光を遮光層で遮断し、前記受光素子へ入射
することを防ぐ。
(Function) According to the present invention, since the light-shielding layer is interposed between the ELQ optical element and the light-receiving element, the light-shielding layer blocks light from other than the document corresponding to each pixel of the light-receiving element. Prevent it from entering the element.

(実施例) 本発明の一実施例について図面を参照しながら説明する
(Example) An example of the present invention will be described with reference to the drawings.

第1図は実施例に係る画像読取装置の断面説明図であり
、第6図と同様の構成をとる部分については同一符号を
付している。
FIG. 1 is an explanatory cross-sectional view of an image reading device according to an embodiment, and parts having the same configuration as those in FIG. 6 are designated by the same reference numerals.

受光素子アレイ2は、例えば、画素21に対応する複数
の個別電極(クロムパターン)と帯状の透明電極(IT
O)とでアモルファスシリコン(a−3t)を挟持した
サンドイッチ構造のセンサで形成されている。
The light receiving element array 2 includes, for example, a plurality of individual electrodes (chrome patterns) corresponding to the pixels 21 and a band-shaped transparent electrode (IT
It is formed of a sandwich structure sensor in which amorphous silicon (a-3t) is sandwiched between amorphous silicon (a-3t) and amorphous silicon (a-3t).

Eし発光素子4は、ZnS:Mn等から成る発光層43
を、Y2O,、Si、N、、BaTLOl等から成る絶
縁層42で挟持し、更にこれらをITO,In、O,、
SnO,等から成る透明電@41とアルミニウム等の金
属から成る不透明な金属電極44とで挟持して構成され
る。
The light emitting element 4 has a light emitting layer 43 made of ZnS:Mn or the like.
are sandwiched between insulating layers 42 made of Y2O, Si, N, BaTLOl, etc., and these are further layered with ITO, In, O, etc.
It is constructed by being sandwiched between a transparent electrode 41 made of SnO, etc. and an opaque metal electrode 44 made of metal such as aluminum.

金属電極44には、発光層43から発光した光が原稿1
00で反射し、反射光が前記受光素子アレイ2に照射す
るように、受光素子アレイ2の各画素21上に画素より
面積が小さい方形状の光入射窓6が開口されている。
The light emitted from the light emitting layer 43 is applied to the metal electrode 44.
A rectangular light entrance window 6 having an area smaller than the pixel is opened above each pixel 21 of the light receiving element array 2 so that the reflected light irradiates the light receiving element array 2.

受光素子アレイ2とEL発光素子4とのnには透明ガラ
ス板10が挿間され、この透明ガラス板10の表面に前
記光入射窓6と同じ大きさの窓部11を有する遮光層1
2が形成されている。この窓部11はそれぞれ光入射窓
6に対応するように形成され、窓部11の直上に光入射
窓6が位置するように配置している。この遮光層12は
、光入射窓6の直上に位置する原稿以外からの反射光や
発光層43から放射された光が直接画素21へ導かれる
ことを防ぐためのものである。
A transparent glass plate 10 is inserted between the light-receiving element array 2 and the EL light-emitting element 4, and a light-shielding layer 1 is provided on the surface of the transparent glass plate 10, which has a window 11 of the same size as the light entrance window 6.
2 is formed. The window portions 11 are formed to correspond to the light entrance windows 6, respectively, and are arranged so that the light entrance windows 6 are located directly above the window portions 11. This light shielding layer 12 is intended to prevent reflected light from sources other than the original located directly above the light entrance window 6 and light emitted from the light emitting layer 43 from being guided directly to the pixels 21 .

EL発光素子4上には透明基板5が配置され、画像読取
装置が読み取る原稿100の原稿面とEL発光素子4と
が直接接触することによりEL発光素子4が庫耗するの
を防止している。あるいは、透明基板5上にEL発光素
子4を形成し、透明ガラス板10にこのEL発光素子が
形成された透明基板5を配置してもよい。
A transparent substrate 5 is disposed on the EL light emitting element 4 to prevent the EL light emitting element 4 from being worn out due to direct contact between the EL light emitting element 4 and the surface of the original 100 read by the image reading device. . Alternatively, the EL light emitting element 4 may be formed on the transparent substrate 5, and the transparent substrate 5 on which the EL light emitting element is formed may be placed on the transparent glass plate 10.

EL発光素子発光のための駆動信号を金属電極44と透
明電極41との間に与えれば、これらの画電極で挟まれ
た部分の発光層43が発光し、光入射窓6の直上部分の
発光層43は発光しない。
When a driving signal for emitting light from the EL light-emitting element is applied between the metal electrode 44 and the transparent electrode 41, the light-emitting layer 43 in the area sandwiched between these picture electrodes emits light, and the light-emitting layer 43 in the area directly above the light entrance window 6 emits light. Layer 43 does not emit light.

発光層43から上方に放射される光は原稿100で反射
し、その反射光αが光入射窓6から各画素21に照射す
るが、第5図に示すような多重反射光βは遮光層12で
遮断され金属電極44の背面に達することがなく、従っ
て、各画素21へ照射することがない。また、第1図に
おいて画素21aに注目すると、その直上の光入射窓6
aを通過する原稿面100からの反射光α1は、画素2
1aに照射するが、隣接する原稿面からの反射光(例え
ば反射光α2)は遮光層12で遮断される。
The light emitted upward from the light emitting layer 43 is reflected by the original 100, and the reflected light α irradiates each pixel 21 from the light entrance window 6, but the multiple reflected light β as shown in FIG. The light does not reach the back surface of the metal electrode 44 and therefore does not irradiate each pixel 21. In addition, when paying attention to the pixel 21a in FIG. 1, the light entrance window 6 directly above it
The reflected light α1 from the document surface 100 passing through a is reflected by the pixel 2
1a, but reflected light (for example, reflected light α2) from an adjacent document surface is blocked by the light shielding layer 12.

本実施例では遮光層12を透明ガラス板10のEL発光
素子4ff!!Iに形成したが、受光素子アレイ2側に
形成してもよい、また、透明ガラス板10の両面に形成
すれば原稿面からの不要な反射光をより以上に遮断する
ことができる。
In this embodiment, the light shielding layer 12 is the EL light emitting element 4ff of the transparent glass plate 10! ! Although it is formed on the light-receiving element array 2 side, it is also possible to form it on both sides of the transparent glass plate 10 to further block unnecessary reflected light from the document surface.

また、受光素子アレイ2とEL発光素子4との間に遮光
層12を一層だけ介在させ、隣接する原稿面からの反射
光を画素21へ照射させないように有効に遮断するため
には、受光素子アレイ2とEL発光素子4との間のどの
位置に遮光層12を配置するかによってその効果が異な
る。すなわち、受光素子アレイ2とEL発光素子4との
距離の2/3の位置でEL発光素子4寄りに挿間させる
と(第4図)、遮光層12を介在させない場合(第3図
)に比較して反射光α2.α3.α4.α5゜α7を遮
断でき、特に近接光入射窓6bを通過する最も光量の大
きな反射光α2を遮断することができるので、隣接原稿
面からの不要な反射光を有効に遮断することができる。
Furthermore, in order to effectively block reflected light from the adjacent document surface from irradiating the pixels 21 by interposing only one layer of the light-shielding layer 12 between the light-receiving element array 2 and the EL light-emitting elements 4, it is necessary to The effect differs depending on where the light shielding layer 12 is placed between the array 2 and the EL light emitting elements 4. That is, when the light receiving element array 2 and the EL light emitting element 4 are inserted at a position of 2/3 of the distance between them toward the EL light emitting element 4 (Fig. 4), when the light shielding layer 12 is not interposed (Fig. 3), In comparison, reflected light α2. α3. α4. Since it is possible to block the reflected light α5° and α7, and especially the reflected light α2 having the largest amount of light passing through the near-light entrance window 6b, it is possible to effectively block unnecessary reflected light from the adjacent document surface.

従って、それぞれの受光素子が読み取るべき原稿面から
の反射光を各受光素子へ入射させるとともに、受光素子
の各画素21上に対応する原稿以外からの光を遮光層1
2で有効に遮断して前記受光素子へ入射することを防ぐ
ので、受光素子の分解能の向上を図ることができる。
Therefore, each light receiving element allows reflected light from the document surface to be read to be incident on each light receiving element, and also prevents light from other than the corresponding document onto each pixel 21 of the light receiving element from entering the light shielding layer 1.
2 effectively blocks the light from entering the light receiving element, so it is possible to improve the resolution of the light receiving element.

次に上述の画像読取装置の製造方法について説明する。Next, a method for manufacturing the above-described image reading device will be described.

この画像読取装置は、受光素子アレイ2.EL発光素子
4をそれぞれ別に作製し、最後にこれらを接合して形成
する。
This image reading device includes a light receiving element array 2. The EL light emitting elements 4 are manufactured separately, and finally they are bonded together.

すなわち、ガラス、セラミック等で形成された基板1上
に受光素子アレイ2を形成する。受光素子アレイ2は、
例えば基板1上にクロムを着膜しフォトリソ法によりパ
ターニングして複数の個別電極を形成し、この個別電極
を覆うようにアモルファスシリコンを着膜して帯状の光
導電層を形成し、この光導電層上に酸化インジウム・ス
ズを着膜して帯状の透明電極を形成して成る。
That is, a light receiving element array 2 is formed on a substrate 1 made of glass, ceramic, or the like. The light receiving element array 2 is
For example, a chromium film is deposited on the substrate 1 and patterned by photolithography to form a plurality of individual electrodes, and amorphous silicon is deposited to cover the individual electrodes to form a band-shaped photoconductive layer. A band-shaped transparent electrode is formed by depositing indium tin oxide on the layer.

ガラス板等で形成した透明基板5上にITO。ITO is placed on a transparent substrate 5 made of a glass plate or the like.

I n20.、SnO,等をスパッタ法等で着膜して透
明電極41を形成し、透明電極41上にY。
I n20. , SnO, etc., by sputtering or the like to form a transparent electrode 41, and then Y on the transparent electrode 41.

0、、St、N、、BaTi0.等を着膜して絶縁層4
2を形成し、絶縁層42上にスパッタ法等でZnS :
 Mn等を着膜して帯状の発光層43を形成し、再度前
記同様の絶縁層42を形成し、絶縁層42上にアルミニ
ウム等の金属を蒸着し、フォトリソ法によりパターニン
グして光入射窓6を有する金属電極41を形成してEL
発光素子4を作製する。
0, , St, N, , BaTi0. etc. to form an insulating layer 4.
ZnS is formed on the insulating layer 42 by sputtering or the like.
A strip-shaped light emitting layer 43 is formed by depositing Mn or the like, an insulating layer 42 similar to the above is formed again, a metal such as aluminum is vapor deposited on the insulating layer 42, and patterned by photolithography to form a light incident window 6. EL is formed by forming a metal electrode 41 having
A light emitting element 4 is produced.

次に、絶縁性を有する透明ガラス板10上に、その全面
を覆うように遮光Jlli(Brewer  5cie
nce社製 DARC)を塗布または着膜する。そして
、前記入射窓6の形成の際に使用したマスクと同じ大き
さの開口部を有するマスクで、透明ガラス板10が露出
するまで遮光膜をエツチングし、窓部11を有する遮光
層12を形成する。
Next, a light-shielding Jlli (Brewer 5cie) is placed on the insulating transparent glass plate 10 to cover the entire surface.
DARC (manufactured by nce) is coated or deposited. Then, the light shielding film is etched using a mask having an opening of the same size as the mask used to form the entrance window 6 until the transparent glass plate 10 is exposed, thereby forming a light shielding layer 12 having a window 11. do.

受光素子アレイ2を形成した基板1とEL発光素子4を
形成した透明基板5との間に、透明ガラス板10を配置
させ、画素21と窓部11.窓部11と入射窓6とが相
対応するように接着剤9により接合する。
A transparent glass plate 10 is placed between the substrate 1 on which the light receiving element array 2 is formed and the transparent substrate 5 on which the EL light emitting elements 4 are formed, and the pixels 21 and the window portion 11 . The window portion 11 and the entrance window 6 are bonded using an adhesive 9 so as to correspond to each other.

第5図は本発明の他の実施例を示すもので、遮光層12
をEL発光素子4の金属電極44に連続して形成したも
のである。この場合、アルミニウム及び遮光膜(Bre
wer  5cience社製 DARC>を続けて着
膜し、同一マスクを用いてそれぞれエツチングして入射
窓6を有する電極及び窓部11を有する遮光層12を形
成することができる0本構成によれば、反射光の多重反
射光を画素21に照射することを防ぐことができる。
FIG. 5 shows another embodiment of the present invention, in which the light shielding layer 12
is formed continuously on the metal electrode 44 of the EL light emitting element 4. In this case, aluminum and a light-shielding film (Br
According to the zero-layer structure, the electrodes having the entrance window 6 and the light-shielding layer 12 having the window portion 11 can be formed by successively depositing DARC> manufactured by Wer 5science and etching each using the same mask. It is possible to prevent the pixels 21 from being irradiated with multiple reflected light.

また、受光素子アレイ2の製造工程において、共通電極
上に絶縁層を形成し、この絶縁層上に窓部11を有する
遮光層12を形成してもよい。
Further, in the manufacturing process of the light receiving element array 2, an insulating layer may be formed on the common electrode, and the light shielding layer 12 having the window portion 11 may be formed on this insulating layer.

F、L発光素子4や受光素子アレイ2に連続して遮光層
12を形成すれば、受光素子アレイ2とEL発光素子4
との間の透明ガラス板10が不要となり、パッシベーシ
ョン膜30を挾んでEし発光素子4と受光素子アレイ2
とを接合する。
If the light shielding layer 12 is formed continuously on the F and L light emitting elements 4 and the light receiving element array 2, the light receiving element array 2 and the EL light emitting elements 4
The transparent glass plate 10 between the light emitting element 4 and the light receiving element array 2 is removed by sandwiching the passivation film 30 between the light emitting element 4 and the light receiving element array 2.
to join.

(発明の効果) 本発明によれば、EL発光素子と受光素子との間に遮光
層を介在させたので、各画素に入射する不要な反射光を
遮光層で遮断することができ、受光素子の分解能の向上
を図ることができる。
(Effects of the Invention) According to the present invention, since the light-shielding layer is interposed between the EL light-emitting element and the light-receiving element, unnecessary reflected light that enters each pixel can be blocked by the light-shielding layer, and the light-receiving element It is possible to improve the resolution of

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明実施例の画像読取装置の断面説明図、第
2図は透明ガラス板に形成した遮光層の平面説明図、第
3図及び第4図は原稿面からの反射光の照射状態を示す
説明図、第5図は本発明の他の実施例を示す断面説明図
、第6図(a)は従来の受光素子1発元素子一体型の画
像読取装置の平面説明図、第2図(b)は同上の断面説
明図である。 1・・・・・・基板 2・・・・・・受光素子アレイ 21・・・・・・画素 4・・・・・・EL発光素子 5・・・・・・透明基板 6・・・・・・光入射窓 10・・・・・・透明ガラス板 11・・・・・・窓部 12・・・・・・遮光層 第1図 第3図 第4図 手続補正書 (方式) %式% 事件の表示 昭和63年特許願第326271、 発明の名称 画像読取装置 <549)富士上゛ロツクスイ末式会社平成 1年3月28日(発送臼) 6、補正の対象 明細書の「図面の簡単な説明」の欄 と補正する。 第6図 (a) (b)
FIG. 1 is an explanatory cross-sectional view of an image reading device according to an embodiment of the present invention, FIG. 2 is an explanatory plan view of a light shielding layer formed on a transparent glass plate, and FIGS. 3 and 4 are irradiation of reflected light from the surface of a document. FIG. 5 is an explanatory cross-sectional view showing another embodiment of the present invention. FIG. FIG. 2(b) is an explanatory cross-sectional view of the same as above. 1... Substrate 2... Light receiving element array 21... Pixel 4... EL light emitting element 5... Transparent substrate 6... ...Light entrance window 10...Transparent glass plate 11...Window section 12...Light blocking layer Figure 1 Figure 3 Figure 4 Procedure amendment (method) % formula % Indication of the case Patent application No. 326271 of 1988, Title of the invention Image reading device Edit the "Brief explanation" column. Figure 6 (a) (b)

Claims (1)

【特許請求の範囲】 少なくとも金属電極を有するEL発光素子と受光素子と
を絶縁層を介して配設し、EL発光素子側に配置された
原稿からの反射光を前記受光素子へ導くための光入射窓
を金属電極に設けた画像読取装置において、 前記受光素子に対面した原稿からの反射光を透過する窓
部を有した遮光層を、前記EL発光素子と受光素子との
間に介在させたことを特徴とする画像読取装置。
[Scope of Claims] An EL light emitting element having at least a metal electrode and a light receiving element are disposed with an insulating layer interposed therebetween, and light for guiding reflected light from a document placed on the side of the EL light emitting element to the light receiving element. In an image reading device in which an entrance window is provided on a metal electrode, a light-shielding layer having a window portion that transmits reflected light from a document facing the light-receiving element is interposed between the EL light-emitting element and the light-receiving element. An image reading device characterized by:
JP63326271A 1988-12-26 1988-12-26 Image readout device Pending JPH02174161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63326271A JPH02174161A (en) 1988-12-26 1988-12-26 Image readout device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63326271A JPH02174161A (en) 1988-12-26 1988-12-26 Image readout device

Publications (1)

Publication Number Publication Date
JPH02174161A true JPH02174161A (en) 1990-07-05

Family

ID=18185904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63326271A Pending JPH02174161A (en) 1988-12-26 1988-12-26 Image readout device

Country Status (1)

Country Link
JP (1) JPH02174161A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371352A (en) * 1993-01-29 1994-12-06 Mitsubishi Denki Kabushiki Kaisha Photodetector comprising a test element group of PN junctions and including a mask having at least one window spaced apart from the PN junctions
JP2009003821A (en) * 2007-06-25 2009-01-08 Hitachi Ltd Imaging apparatus and apparatus mounted with the same
JP2012221083A (en) * 2011-04-06 2012-11-12 Seiko Epson Corp Sensing device and electronic apparatus
JP2015146203A (en) * 2015-03-06 2015-08-13 セイコーエプソン株式会社 Vein imaging device and electronic equipment
CN110193189A (en) * 2018-02-27 2019-09-03 宏达国际电子股份有限公司 Traceable Optical devices
JP2020008292A (en) * 2018-07-02 2020-01-16 株式会社リコー Spectroscopic instrument, evaluation device, and printer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371352A (en) * 1993-01-29 1994-12-06 Mitsubishi Denki Kabushiki Kaisha Photodetector comprising a test element group of PN junctions and including a mask having at least one window spaced apart from the PN junctions
JP2009003821A (en) * 2007-06-25 2009-01-08 Hitachi Ltd Imaging apparatus and apparatus mounted with the same
JP2012221083A (en) * 2011-04-06 2012-11-12 Seiko Epson Corp Sensing device and electronic apparatus
JP2015146203A (en) * 2015-03-06 2015-08-13 セイコーエプソン株式会社 Vein imaging device and electronic equipment
CN110193189A (en) * 2018-02-27 2019-09-03 宏达国际电子股份有限公司 Traceable Optical devices
CN110193189B (en) * 2018-02-27 2022-09-13 宏达国际电子股份有限公司 Traceable optical device
JP2020008292A (en) * 2018-07-02 2020-01-16 株式会社リコー Spectroscopic instrument, evaluation device, and printer

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