JPH04366194A - Primer composition and semiconductor device - Google Patents
Primer composition and semiconductor deviceInfo
- Publication number
- JPH04366194A JPH04366194A JP3168855A JP16885591A JPH04366194A JP H04366194 A JPH04366194 A JP H04366194A JP 3168855 A JP3168855 A JP 3168855A JP 16885591 A JP16885591 A JP 16885591A JP H04366194 A JPH04366194 A JP H04366194A
- Authority
- JP
- Japan
- Prior art keywords
- group
- resin
- formula
- primer composition
- polyimide resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 229920001721 polyimide Polymers 0.000 claims abstract description 55
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000004642 Polyimide Substances 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims description 10
- -1 amino, mercapto Chemical class 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 12
- 239000004033 plastic Substances 0.000 abstract description 10
- 229920003023 plastic Polymers 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 125000000962 organic group Chemical group 0.000 abstract description 7
- 150000002739 metals Chemical class 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 4
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 abstract description 3
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 3
- 125000003118 aryl group Chemical group 0.000 abstract description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 abstract 3
- 125000004429 atom Chemical group 0.000 abstract 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 abstract 1
- 239000009719 polyimide resin Substances 0.000 description 42
- 229920005989 resin Polymers 0.000 description 25
- 239000011347 resin Substances 0.000 description 25
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 14
- 239000002904 solvent Substances 0.000 description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 150000004985 diamines Chemical class 0.000 description 11
- 238000003786 synthesis reaction Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- 229920005575 poly(amic acid) Polymers 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 8
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 8
- 239000000047 product Substances 0.000 description 7
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000012778 molding material Substances 0.000 description 5
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 5
- 229960004065 perflutren Drugs 0.000 description 5
- LGRFSURHDFAFJT-UHFFFAOYSA-N phthalic anhydride Chemical compound C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 4
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 125000005462 imide group Chemical group 0.000 description 3
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004641 Diallyl-phthalate Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- WVNYNXRKEGHSSQ-UHFFFAOYSA-N 3-[2-[3-aminopropyl(dimethyl)silyl]ethyl-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)CC[Si](C)(C)CCCN WVNYNXRKEGHSSQ-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- KNTKCYKJRSMRMZ-UHFFFAOYSA-N 3-chloropropyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCCl KNTKCYKJRSMRMZ-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MBHRHUJRKGNOKX-UHFFFAOYSA-N [(4,6-diamino-1,3,5-triazin-2-yl)amino]methanol Chemical compound NC1=NC(N)=NC(NCO)=N1 MBHRHUJRKGNOKX-UHFFFAOYSA-N 0.000 description 1
- PXAJQJMDEXJWFB-UHFFFAOYSA-N acetone oxime Chemical group CC(C)=NO PXAJQJMDEXJWFB-UHFFFAOYSA-N 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- BTHCBXJLLCHNMS-UHFFFAOYSA-N acetyloxysilicon Chemical compound CC(=O)O[Si] BTHCBXJLLCHNMS-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 125000003302 alkenyloxy group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000001231 benzoyloxy group Chemical group C(C1=CC=CC=C1)(=O)O* 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- DNSISZSEWVHGLH-UHFFFAOYSA-N butanamide Chemical group CCCC(N)=O DNSISZSEWVHGLH-UHFFFAOYSA-N 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 description 1
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 1
- NUFVQEIPPHHQCK-UHFFFAOYSA-N ethenyl-methoxy-dimethylsilane Chemical compound CO[Si](C)(C)C=C NUFVQEIPPHHQCK-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- WHIVNJATOVLWBW-UHFFFAOYSA-N n-butan-2-ylidenehydroxylamine Chemical group CCC(C)=NO WHIVNJATOVLWBW-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-AZXPZELESA-N n-methylacetamide Chemical group C[15NH]C(C)=O OHLUUHNLEMFGTQ-AZXPZELESA-N 0.000 description 1
- NCCHARWOCKOHIH-UHFFFAOYSA-N n-methylbenzamide Chemical group CNC(=O)C1=CC=CC=C1 NCCHARWOCKOHIH-UHFFFAOYSA-N 0.000 description 1
- NAQQTJZRCYNBRX-UHFFFAOYSA-N n-pentan-3-ylidenehydroxylamine Chemical group CCC(CC)=NO NAQQTJZRCYNBRX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical compound CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 1
- WCAGGTLUGWSHOV-UHFFFAOYSA-N tris(tert-butylperoxy)-ethenylsilane Chemical compound CC(C)(C)OO[Si](OOC(C)(C)C)(OOC(C)(C)C)C=C WCAGGTLUGWSHOV-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、種々の金属材料あるい
はプラスチックからなる成形品の表面に熱硬化性樹脂な
どの成形物を接着させる際に有用なプライマー組成物及
びこの組成物を塗布した半導体装置に関する。[Industrial Application Field] The present invention relates to a primer composition useful for adhering molded articles such as thermosetting resin to the surface of molded articles made of various metal materials or plastics, and a semiconductor coated with this composition. Regarding equipment.
【0002】0002
【従来の技術及び発明が解決しようとする課題】従来、
金属及びプラスチックから構成される成形品の表面特性
を改良する目的で、それらの表面に有機けい素化合物の
硬化皮膜を形成させることが知られている。しかし、一
般的に極めて限定された化学構造を有する有機けい素化
合物とある種の金属との組合わせを除いては金属と有機
けい素化合物は密着性に劣るという問題がある。[Prior art and problems to be solved by the invention] Conventionally,
2. Description of the Related Art In order to improve the surface properties of molded articles made of metals and plastics, it is known to form a hardened film of an organosilicon compound on their surfaces. However, there is a problem in that the adhesion between metals and organosilicon compounds is generally poor, except in combinations of organosilicon compounds having extremely limited chemical structures and certain metals.
【0003】そこで、両者の接着性を改善することがで
きる良好な接着性向上剤やプライマー組成物の開発が要
望され、例えばポリアルキレンイミンとエポキシ結合含
有トリアルコキシシランとを主成分とするプライマー組
成物(特公昭54−28430号公報)、ポリエステル
又はポリエーテルポリオールをアルコキシシランでエス
テル交換して得られる化合物とポリイソシアネートとか
らなる組成物(特公昭48−41697号公報)、メチ
ルメタクリレートを主成分としてなる組成物(特公昭5
2−138565号公報)、エポキシアルキルトリアル
コキシシランを主成分としてなるプライマー組成物(特
公昭54−81378号公報)、ある種のシランと酸無
水物とからなる下塗り組成物(特公昭54−15522
9号公報)、2種以上のシランの共加水分解物とアルキ
ルエーテル化メチロールメラミンとを主成分とする組成
物(特公昭55−99930号公報)等が提案されてい
る。[0003]Therefore, there is a need for the development of a good adhesion improver or primer composition that can improve the adhesion of both. (Japanese Patent Publication No. 54-28430), a composition consisting of a compound obtained by transesterifying a polyester or polyether polyol with an alkoxysilane and polyisocyanate (Japanese Patent Publication No. 48-41697), a composition containing methyl methacrylate as the main component Composition (Tokuko Sho 5)
2-138565), a primer composition containing an epoxyalkyltrialkoxysilane as a main component (Japanese Patent Publication No. 54-81378), an undercoating composition consisting of a certain type of silane and an acid anhydride (Japanese Patent Publication No. 15522-1982),
Japanese Patent Publication No. 55-99930) and a composition containing a co-hydrolyzate of two or more types of silanes and alkyl etherified methylol melamine as main components (Japanese Patent Publication No. 55-99930) have been proposed.
【0004】しかしながら、これらはいずれも充分満足
できる接着性、耐熱水性、耐熱性等を対象物に付与する
ことができないという不利を有している。However, these methods all have the disadvantage that they cannot impart sufficiently satisfactory adhesion, hot water resistance, heat resistance, etc. to the object.
【0005】他方、トランジスター、ダイオード、IC
,LSI等の半導体素子をエポキシ樹脂等の樹脂材料で
封止することがよく行なわれているが、半導体素子をこ
れらの樹脂材料で封止すると、この樹脂材料を通して侵
入した水やイオン性不純物によって半導体素子の劣化が
しばしば引き起こされる。On the other hand, transistors, diodes, ICs
, LSI and other semiconductor devices are often sealed with resin materials such as epoxy resins. However, when semiconductor devices are sealed with these resin materials, water and ionic impurities that enter through the resin materials can cause damage. Deterioration of semiconductor devices is often caused.
【0006】そこで、この対策として耐熱性、電気特性
、機械的特性に優れたポリイミド樹脂で半導体素子を被
覆保護した後、樹脂材料で封止する方法が提案されてい
る。一般にこのポリイミド樹脂は、耐熱性等の優れた特
性を対象物に付与することはできるが、一部の高沸点有
機溶剤以外の溶剤には不溶であるため、通常その前駆体
であるポリアミド酸の状態で有機溶剤に溶解させ、これ
を半導体素子上に塗布した後、加熱硬化(イミド化)さ
せて皮膜を形成させることが行なわれている。しかし、
この方法によるポリイミド樹脂皮膜の形成では、ポリア
ミド酸をポリイミドに変換するための加熱処理に300
℃以上の高温でかつ長時間を要する。このため、上記方
法は、高温下での長時間の加熱が作業工程上、特に省エ
ネルギーの見地から不利であり、また一方、加熱が不十
分な場合には、得られた樹脂の構造中にポリアミド酸が
残存してしまい、このポリアミド酸によりポリイミド樹
脂の耐湿性、耐腐食性等の特性低下を引き起こすことに
もなる。特に、樹脂材料を半導体素子の絶縁保護膜とす
る場合には、このような樹脂性能の低下は半導体素子の
劣化、短寿命化を招くこととなり、大きな問題となるた
め、これらの問題の解決が望まれる。As a countermeasure to this problem, a method has been proposed in which the semiconductor element is coated and protected with a polyimide resin having excellent heat resistance, electrical properties, and mechanical properties, and then sealed with a resin material. In general, this polyimide resin can impart excellent properties such as heat resistance to objects, but since it is insoluble in solvents other than some high-boiling point organic solvents, it is usually difficult to use polyamic acid, which is its precursor. The conventional method is to dissolve it in an organic solvent, apply it onto a semiconductor element, and then heat cure it (imidize it) to form a film. but,
In forming a polyimide resin film using this method, heat treatment for converting polyamic acid into polyimide is performed for 300 min.
It takes a long time and at high temperatures above ℃. For this reason, in the above method, long-term heating at high temperatures is disadvantageous in the working process, especially from the viewpoint of energy saving. The acid will remain, and this polyamic acid will cause deterioration of properties such as moisture resistance and corrosion resistance of the polyimide resin. In particular, when a resin material is used as an insulating protective film for a semiconductor element, such a decrease in resin performance causes deterioration of the semiconductor element and shortens its lifespan, which is a major problem, so it is important to solve these problems. desired.
【0007】更に、最近では、パッケージが益々小型化
、薄型化されると共に、基盤への実装方法も表面実装方
式が主流となり、従来のエポキシ樹脂組成物では十分な
信頼性を維持できなくなってきた。例えばパッケージが
吸湿した状態で半田付けするとパッケージにクラックが
発生する問題やクラックが発生しないまでも耐湿性が低
下してしまうという不具合が生じている。従って、この
点でも高品質なプライマー組成物の開発が要望されてい
る。[0007]Furthermore, recently, as packages have become increasingly smaller and thinner, the surface mounting method has become mainstream as the mounting method on the board, and it has become impossible to maintain sufficient reliability with conventional epoxy resin compositions. . For example, if the package is soldered when it has absorbed moisture, there is a problem that the package will crack, or even if no cracks occur, the moisture resistance will deteriorate. Therefore, in this respect as well, there is a demand for the development of a high quality primer composition.
【0008】本発明は上記事情に鑑みなされたもので、
金属又はプラスチック材料との接着性に優れ、かつ、耐
熱性、耐水性等の特性に優れた硬化皮膜を低温短時間の
加熱硬化で与えるプライマー組成物及びこの組成物が塗
布された半導体装置を提供することを目的とする。The present invention was made in view of the above circumstances, and
Provided is a primer composition that provides a cured film with excellent adhesion to metal or plastic materials and excellent properties such as heat resistance and water resistance by heating and curing at a low temperature for a short time, and a semiconductor device coated with this composition. The purpose is to
【0009】[0009]
【課題を解決するための手段及び作用】本発明者は上記
目的を達成するため鋭意検討を重ねた結果、下記一般式
(1)で示される構造単位を有するポリイミド化合物と
下記一般式(4)で示されるシランカップリング剤とを
併用することにより、各種特性に優れたプライマー組成
物が得られることを知見した。[Means and Effects for Solving the Problem] As a result of intensive studies to achieve the above object, the present inventors have found that a polyimide compound having a structural unit represented by the following general formula (1) and a polyimide compound having the following general formula (4) It has been found that a primer composition with excellent various properties can be obtained by using the silane coupling agent shown in the following.
【0010】0010
【化3】[Chemical formula 3]
【0011】即ち、上記式(1)の閉環性ポリイミド樹
脂は、フェノール系、N−メチル−2−ピロリドン等の
一部の溶剤以外には不溶である従来のポリイミド樹脂と
異なり、低沸点有機溶剤であるエーテル系、ケトン系、
セロソルブ系統の有機溶剤に良好な溶解性を示し、従っ
てこれらの低沸点溶剤溶液から短時間、低温の加熱でポ
リイミド樹脂膜を形成し得、作業性の大幅な向上と省エ
ネルギー化、低コスト化を達成でき、安全衛生上からも
好ましいことを見出した。更に、この式(1)のポリイ
ミド樹脂に上記式(4)のシランカップリング剤を併用
した場合、金属材料及びプラスチック材料の表面ではじ
かれることがなく、また材料表面に段差や傾斜があって
も均一にピンホールなく塗膜を形成することができ、単
独のポリイミド樹脂のもつ接着性よりも優れた接着性の
皮膜が得られ、この皮膜は接着性、耐熱性、電気的・機
械的特性、吸湿半田特性等の性能に優れたものであるこ
とを見出した。それ故、上記プライマー組成物は、塗料
、染料、コーティング剤、一般成形材料の下塗り剤等と
して有効であり、特にこの組成物の表面に塗布し、溶剤
を飛散させることにより形成される皮膜で保護された半
導体素子は極めて信頼性が高く、吸湿半田特性も優れて
いるものであることを見い出し、本発明を開発するに至
ったものである。That is, the ring-closing polyimide resin of formula (1) above is different from conventional polyimide resins which are insoluble in solvents other than some solvents such as phenol and N-methyl-2-pyrrolidone. ether type, ketone type,
It shows good solubility in cellosolve-based organic solvents, and therefore polyimide resin films can be formed from these low-boiling point solvent solutions by heating at low temperatures for a short time, significantly improving workability, saving energy, and reducing costs. We have found that this can be achieved and that it is preferable from a safety and health perspective. Furthermore, when the polyimide resin of formula (1) is used in combination with the silane coupling agent of formula (4) above, it will not be repelled by the surface of metal materials and plastic materials, and it will not be repelled by the surface of metal materials or plastic materials, and there will be no steps or slopes on the surface of the material. It is possible to form a coating film uniformly without pinholes, resulting in a film with superior adhesiveness than that of polyimide resin alone, and this film has excellent adhesion, heat resistance, electrical and mechanical properties. It has been found that the solder material has excellent properties such as moisture absorption and soldering properties. Therefore, the above primer composition is effective as a paint, dye, coating agent, undercoat for general molding materials, etc. In particular, the composition is applied to the surface and protected by a film formed by scattering the solvent. The inventors discovered that the semiconductor device produced by the inventors of the present invention has extremely high reliability and excellent moisture-absorbing soldering properties, which led to the development of the present invention.
【0012】従って、本発明は、上記式(1)のポリイ
ミド化合物と上記式(4)のシランカップリング剤とを
配合してなるプライマー組成物、及び、この組成物を表
面に塗布した半導体装置を提供する。Therefore, the present invention provides a primer composition comprising a polyimide compound of the above formula (1) and a silane coupling agent of the above formula (4), and a semiconductor device having a surface coated with this composition. I will provide a.
【0013】以下、本発明につき更に詳述すると、本発
明の第一必須成分であるポリイミド化合物は下記一般式
(1)で示されるものである。The present invention will be described in more detail below. The polyimide compound which is the first essential component of the present invention is represented by the following general formula (1).
【0014】[0014]
【化4】[C4]
【0015】上記式(1)の構造単位を有するポリイミ
ド化合物はテトラカルボン酸二無水物とジアミン成分と
から合成することができる。A polyimide compound having the structural unit of the above formula (1) can be synthesized from a tetracarboxylic dianhydride and a diamine component.
【0016】ここで、テトラカルボン酸二無水物は、例
えば下記のものが挙げられる。[0016] Examples of the tetracarboxylic dianhydride include the following.
【0017】[0017]
【化5】[C5]
【0018】なお、酸二無水物としては、これらの1種
を単独で又は2種以上を併用して使用することができる
。[0018] As the acid dianhydride, one of these types can be used alone or two or more types can be used in combination.
【0019】また、ジアミン成分としては、下記構造式
(5)で示されるシリコーンジアミンと下記構造式(6
)で示されるエーテルジアミンが好適に使用される。In addition, as the diamine component, silicone diamine represented by the following structural formula (5) and the following structural formula (6) are used.
) are preferably used.
【0020】[0020]
【化6】[C6]
【0021】ここで、上記式(5)中のR1の二価の有
機基としては炭素数1〜18、特に1〜7のものが好適
に使用され、例えば下記構造の有機基が挙げられる。Here, as the divalent organic group R1 in the above formula (5), those having 1 to 18 carbon atoms, particularly 1 to 7 carbon atoms are preferably used, and examples thereof include organic groups having the following structure.
【0022】[0022]
【化7】[C7]
【0023】更に、R2,R3の非置換又は置換の1価
炭化水素基としては炭素数1〜18、特に1〜8のもの
が好適に使用され、例えばメチル基,エチル基,プロピ
ル基,ブチル基等のアルキル基、シクロヘキシル基等の
シクロアルキル基、フェニル基,トリル基等のアリール
基、ベンジル基,フェニルエチル基等のアラルキル基又
はこれらの基の水素原子の一部又は全部をハロゲン原子
等で置換したクロロメチル基、3,3,3−トリフルオ
ロプロピル基などが挙げられる。Furthermore, as the unsubstituted or substituted monovalent hydrocarbon group for R2 and R3, those having 1 to 18 carbon atoms, particularly 1 to 8 carbon atoms, are preferably used, such as methyl group, ethyl group, propyl group, butyl group, etc. Alkyl groups such as cyclohexyl groups, cycloalkyl groups such as cyclohexyl groups, aryl groups such as phenyl groups and tolyl groups, aralkyl groups such as benzyl groups and phenylethyl groups, or some or all of the hydrogen atoms of these groups are replaced with halogen atoms, etc. Examples include a chloromethyl group substituted with , a 3,3,3-trifluoropropyl group, and the like.
【0024】また、上記式(5)中Yは酸素原子又は二
価の炭化水素基であり、二価の炭化水素基としては炭素
数が10以下、特に1〜6のものが好適に使用され、例
えば下記構造の基などが挙げられる。Further, in the above formula (5), Y is an oxygen atom or a divalent hydrocarbon group, and as the divalent hydrocarbon group, those having 10 or less carbon atoms, particularly 1 to 6 carbon atoms are preferably used. , for example, a group having the following structure.
【0025】[0025]
【化8】[Chemical formula 8]
【0026】上記式(5)で示されるジアミンとして具
体的には、Yが酸素原子の場合、例えば下記構造のジア
ミノシロキサンが挙げられる。Specific examples of the diamine represented by the above formula (5) include diaminosiloxanes having the following structure when Y is an oxygen atom.
【0027】[0027]
【化9】[Chemical formula 9]
【0028】また、Yが二価の有機基である場合には、
例えば下記構造のシリコーンジアミンが挙げられるが、
これらに限定されるものではない。Furthermore, when Y is a divalent organic group,
For example, silicone diamine with the following structure can be mentioned,
It is not limited to these.
【0029】[0029]
【化10】[Chemical formula 10]
【0030】[0030]
【化11】[Chemical formula 11]
【0031】次に、もう一つの成分である上記式(6)
のエーテルジアミンとして具体的には、下記のものが挙
げられるが、これに限定されるものではない。Next, another component, the above formula (6)
Specific examples of the ether diamine include, but are not limited to, the following.
【0032】[0032]
【化12】[Chemical formula 12]
【0033】上述したテトラカルボン酸二無水物成分と
ジアミン成分とは、当量比で0.9〜1.1の範囲、特
に0.95〜1.05の範囲で配合することが好ましい
。The above-mentioned tetracarboxylic dianhydride component and diamine component are preferably blended in an equivalent ratio of 0.9 to 1.1, particularly 0.95 to 1.05.
【0034】上述した成分、配合比によりポリイミド樹
脂を重合する場合、公知方法に従い行なうことができる
。例えば、上記テトラカルボン酸二無水物成分とジアミ
ン成分との所定量をN−メチル−2−ピロリドン,N,
N’−ジメチルホルムアミド,N,N’−ジメチルアセ
トアミド等の極性有機溶剤中に仕込み、0〜60℃の低
温で反応させてポリイミド樹脂の前駆体であるポリアミ
ック酸樹脂を合成する。このポリアミック酸樹脂を単離
することなく、引き続いて100〜200℃、好ましく
は140〜180℃の温度範囲に溶液を昇温することに
よりポリアミック酸の酸アミド部分に脱水閉環反応が進
行し、目的とするポリイミド樹脂を合成することができ
る。また、この脱水閉環反応を短時間の内に完全に進行
させるためには、トルエン、キシレン等の共沸脱水溶剤
を併用することが好ましい。この重合反応の進行は赤外
吸収スペクトルのイミド基の特性吸収帯の変化から求め
るという公知の方法(特公昭57−41330号公報)
により検知することができる。脱水閉環によるイミド化
が終了した後は、この反応溶液を冷却し、メタノール中
に流し込むことによって再沈させ、これを乾燥するなど
して、本発明に係るポリイミド樹脂を得ることができる
。[0034] When polymerizing a polyimide resin using the above-mentioned components and blending ratio, it can be carried out according to a known method. For example, predetermined amounts of the above tetracarboxylic dianhydride component and diamine component are mixed with N-methyl-2-pyrrolidone, N,
It is charged into a polar organic solvent such as N'-dimethylformamide or N,N'-dimethylacetamide, and reacted at a low temperature of 0 to 60°C to synthesize a polyamic acid resin, which is a precursor of a polyimide resin. Without isolating this polyamic acid resin, by subsequently heating the solution to a temperature range of 100 to 200°C, preferably 140 to 180°C, a dehydration ring-closing reaction proceeds to the acid amide portion of the polyamic acid, and the desired purpose is achieved. A polyimide resin can be synthesized. Further, in order to allow this dehydration ring-closing reaction to proceed completely within a short time, it is preferable to use an azeotropic dehydration solvent such as toluene or xylene in combination. The progress of this polymerization reaction is determined by the change in the characteristic absorption band of the imide group in the infrared absorption spectrum (Japanese Patent Publication No. 57-41330).
It can be detected by After the imidization by dehydration and ring closure is completed, the reaction solution is cooled, reprecipitated by pouring it into methanol, and dried to obtain the polyimide resin according to the present invention.
【0035】これらの一連の操作により得られるポリイ
ミド樹脂は、上述したように低沸点有機溶剤、即ち、シ
クロヘキサノン,アセトフェノン等のケトン系溶剤、テ
トラヒドロフラン,1,4−ジオキサン,ジグライム等
のエーテル系溶剤やセロソルブ系溶剤などに良好な溶解
性を示す。従って、後述するように本発明組成物は有機
溶剤に溶解して用いられるが、有機溶剤としては、これ
ら有機溶剤の1種を単独で又は2種以上を混合して用い
ることができる。The polyimide resin obtained by these series of operations can be prepared by using a low boiling point organic solvent, that is, a ketone solvent such as cyclohexanone or acetophenone, an ether solvent such as tetrahydrofuran, 1,4-dioxane, or diglyme, as described above. Shows good solubility in cellosolve solvents. Therefore, as described below, the composition of the present invention is used after being dissolved in an organic solvent, and as the organic solvent, one type of these organic solvents can be used alone or two or more types can be used in combination.
【0036】本発明のプライマー組成物は、上述したポ
リイミド樹脂に加えてシランカップリング剤を配合する
。The primer composition of the present invention contains a silane coupling agent in addition to the above-mentioned polyimide resin.
【0037】ここで、シランカップリング剤は下記一般
式(4)で示される化合物である。[0037] Here, the silane coupling agent is a compound represented by the following general formula (4).
【0038】[0038]
【化13】[Chemical formula 13]
【0039】ここで、Mで示される加水分解性基として
は、例えばメトキシ基、エトキシ基、プロポキシ基、ブ
トキシ基、メトキシエトキシ基、エトキシエトキシ基等
のアルコキシ基;アセトオキシ基、プロピオノキシ基、
ブチロイロキシ基、ベンゾイルオキシ基等のアシロキシ
基;イソプロペニルオキシ基、イソブテニルオキシ基、
1−エチル−2−メチルビニルオキシ基等のアルケニル
オキシ基;ジメチルケトオキシム基、メチルエチルケト
オキシム基、ジエチルケトオキシム基、シクロペンタノ
キシム基、シクロヘキサノキシム基等のイミノキシ基;
N−メチルアミノ基、N−エチルアミノ基、N−プロピ
ルアミノ基、N−ブチルアミノ基、N,N−ジメチルア
ミノ基、N,N−ジエチルアミノ基、シクロヘキシルア
ミノ基等のアミノ基;N−メチルアセトアミド基、N−
エチルアセトアミド基、N−メチルベンズアミド基等の
アミド基;N,N−ジメチルアミノオキシ基、N,N−
ジエチルアミノオキシ基等のアミノオキシ基を挙げるこ
とができる。Here, the hydrolyzable group represented by M includes, for example, an alkoxy group such as a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a methoxyethoxy group, an ethoxyethoxy group; an acetoxy group, a propionoxy group,
Acyloxy groups such as butyroyloxy group, benzoyloxy group; isopropenyloxy group, isobutenyloxy group,
Alkenyloxy groups such as 1-ethyl-2-methylvinyloxy group; iminoxy groups such as dimethylketoxime group, methylethylketoxime group, diethylketoxime group, cyclopentanoxime group, cyclohexanoxime group;
Amino groups such as N-methylamino group, N-ethylamino group, N-propylamino group, N-butylamino group, N,N-dimethylamino group, N,N-diethylamino group, cyclohexylamino group; N-methyl Acetamide group, N-
Amide groups such as ethylacetamide group and N-methylbenzamide group; N,N-dimethylaminooxy group, N,N-
Aminooxy groups such as diethylaminooxy groups can be mentioned.
【0040】このような式(4)のシランカップリング
剤として具体的には、ビニルトリメトキシシラン、ビニ
ルトリエトキシシラン、ビニルメチルジメトキシシラン
、ビニルメチルジエトキシシラン、ビニルジメチルモノ
メトキシシラン、ビニルトリアセトキシシラン、ビニル
トリス(tert−プチルパーオキシ)シラン、3−グ
リシドキシプロピルトリメトキシシラン、3−グリシド
キシプロピルメチルジエトキシシラン、3−メタアクリ
ロキシプロピルトリメトキシシラン、3−メタアクリロ
キシプロピルトリエトキシシラン、3−メタアクリロキ
シプロピルメチルジメトキシシラン、3−メタアクリロ
キシプロピルメチルジエトキシシラン、N−(2−アミ
ノエチル)−3−アミノプロピルトリメトキシシラン、
N−(2−アミノエチル)−3−アミノプロピルメチル
ジメトキシシラン、3−クロロプロピルトリメトキシシ
ラン、3−クロロプロピルメチルジメトキシシラン、3
−メルカプトプロピルトリメトキシシラン、3−メルカ
プトプロピルメチルジメトキシシラン、3−アミノプロ
ピルトリエトキシシラン、3−アミノプロピルメチルジ
エトキシシラン、3−チオメタアクリレートプロピルト
リメトキシシラン、3−メタアクリルアミドプロピルメ
チルジエトキシシラン、3−チオメタアクリレートプロ
ピルメチルジメトキシシラン等が挙げられる。これらの
中でも特にN−(2−アミノエチル)−3−アミノプロ
ピルトリメトキシシラン、3−メルカプトプロピルトリ
メトキシシランが好ましい。これらシランカップリング
剤は、単独で使用してもよく、2種以上混合しても差し
支えない。また、これらシランカップリング剤の加水分
解物の使用も可能である。Specific examples of the silane coupling agent of formula (4) include vinyltrimethoxysilane, vinyltriethoxysilane, vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, vinyldimethylmonomethoxysilane, and vinyltrimethoxysilane. Acetoxysilane, vinyltris(tert-butylperoxy)silane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropyl Triethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane,
N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane, 3-chloropropyltrimethoxysilane, 3-chloropropylmethyldimethoxysilane, 3
-Mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-thiomethacrylatepropyltrimethoxysilane, 3-methacrylamidopropylmethyldiethoxy Examples include silane, 3-thiometaacrylatepropylmethyldimethoxysilane, and the like. Among these, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are particularly preferred. These silane coupling agents may be used alone or in combination of two or more. It is also possible to use hydrolysates of these silane coupling agents.
【0041】本発明のプライマー組成物において、上述
した式(1)のポリイミド化合物と式(4)のシランカ
ップリング剤との配合量は作業条件等により適宜選択さ
れるが、通常ポリイミド化合物は組成物全体の2〜80
重量%、特に10〜50重量%とすることが好ましく、
シランカップリング剤は組成物全体の20〜98重量%
、特に50〜90重量%とすることが好ましい。ポリイ
ミド化合物が2重量%未満であったり、シランカップリ
ング剤が98重量%を超えると形成された皮膜の強度が
弱く、プライマー層で凝集破壊し易くなる場合があり、
ポリイミド化合物が80重量%を超えたり、シランカッ
プリング剤が20重量%に満たないと、接着性が弱くな
る場合がある。なお、この接着力の低下はシランカップ
リング剤の配合量が少なくなってシランカップリング剤
中に存在する反応性アルコキシ基含有量が少なくなるた
めであると考える。In the primer composition of the present invention, the blending amounts of the polyimide compound of formula (1) and the silane coupling agent of formula (4) described above are appropriately selected depending on the working conditions, etc., but usually the polyimide compound is 2-80 of the whole thing
% by weight, preferably 10 to 50% by weight,
The silane coupling agent is 20 to 98% by weight of the entire composition.
, particularly preferably 50 to 90% by weight. If the polyimide compound is less than 2% by weight or the silane coupling agent is more than 98% by weight, the strength of the formed film will be weak and the primer layer may be prone to cohesive failure.
If the content of the polyimide compound exceeds 80% by weight or the content of the silane coupling agent is less than 20% by weight, the adhesiveness may become weak. It is believed that this decrease in adhesive strength is due to a decrease in the amount of the silane coupling agent blended and a decrease in the content of reactive alkoxy groups present in the silane coupling agent.
【0042】本発明のプライマー組成物は、前述の低沸
点有機溶剤で希釈可能であり、種々の濃度の溶液として
使用可能である。プライマー濃度としては、20重量%
以下が好ましく、特に10重量%以下とすることが望ま
しい。また、対象物に塗布する際、プライマーの皮膜の
厚みを10μm以下、特に5μm以下とすることが望ま
しい。The primer composition of the present invention can be diluted with the above-mentioned low boiling point organic solvent and can be used as a solution of various concentrations. Primer concentration: 20% by weight
It is preferably at most 10% by weight or less, particularly preferably at most 10% by weight. Furthermore, when applying the primer to an object, it is desirable that the thickness of the primer film be 10 μm or less, particularly 5 μm or less.
【0043】また、プライマー組成物の各種基材に対す
る塗布方法としてはハケ塗り、浸透法、ロールコータ法
、スプレー法等用途に合わせて可能である。また、半導
体素子に保護膜を形成する場合は、組成物をスピンコー
トやディスペンサーから滴下したり、あるいはその他の
公知の塗布方法により半導体素子上に塗布した後、有機
溶剤を150℃〜180℃で1〜2時間の加熱処理で揮
発させるという極めて簡単かつ低温短時間の処理により
素子や配線に対する接着性、耐熱性、電気特性、機械的
特性、吸湿半田特性に優れたプライマー層の保護膜を均
一にしかもピンホールなく形成することができる。[0043] The primer composition can be applied to various substrates by brushing, penetrating, roll coating, spraying, etc. depending on the application. In addition, when forming a protective film on a semiconductor element, after coating the composition on the semiconductor element by spin coating, dripping from a dispenser, or other known coating method, apply an organic solvent at 150°C to 180°C. An extremely simple, low-temperature, short-time process that evaporates with heat treatment for 1 to 2 hours creates a uniform protective film for the primer layer, which has excellent adhesion to elements and wiring, heat resistance, electrical properties, mechanical properties, and moisture-absorbing soldering properties. Moreover, it can be formed without pinholes.
【0044】このような本発明のプライマー組成物は金
属材料又はプラスチックからなる成形品の表面に強固な
硬化皮膜を形成し得るものであり、金属材料としては、
例えばアルミニウム,鉄,亜鉛,錫,銀,金,銅,ニッ
ケル,ステンレス,クロム銅,ケイ素銅,銅−ニッケル
合金等が、また、プラスチックとしては、例えばエポキ
シ樹脂,ABS樹脂(アクリロニトリル−ブタジエン−
スチレン共重合体樹脂),PBT樹脂(ポリブチレンテ
レフタレート樹脂),PPS樹脂(ポリフェニレンサル
ファイド樹脂),DAP樹脂(ジアリルフタレート樹脂
),ナイロン,スチレン樹脂,メラミン樹脂,ポリエス
テル樹脂,ポリカーボネート樹脂等が挙げられる。なお
、本発明組成物は、特に鉄、銅、ニッケル等の金属との
接着性が高いので、これら金属の表面にエポキシ樹脂成
形材料の硬化物を接着させるプライマーとして極めて有
用である。The primer composition of the present invention can form a strong cured film on the surface of a molded article made of metal or plastic.
For example, aluminum, iron, zinc, tin, silver, gold, copper, nickel, stainless steel, chromium copper, silicon copper, copper-nickel alloy, etc. Also, as plastics, for example, epoxy resin, ABS resin (acrylonitrile-butadiene-
Examples include styrene copolymer resin), PBT resin (polybutylene terephthalate resin), PPS resin (polyphenylene sulfide resin), DAP resin (diallyl phthalate resin), nylon, styrene resin, melamine resin, polyester resin, and polycarbonate resin. The composition of the present invention has particularly high adhesion to metals such as iron, copper, and nickel, and is therefore extremely useful as a primer for adhering cured epoxy resin molding materials to the surfaces of these metals.
【0045】[0045]
【発明の効果】以上説明したように、本発明のプライマ
ー組成物は金属材料又はプラスチックからなる成形品の
表面に強固な硬化皮膜を設ける際に有用で、これらの表
面改質に有効なものであり、特に半導体素子に用いる場
合、低温且つ短時間の熱処理により簡単な操作で優れた
耐熱性、電気的、機械的特性、吸湿半田特性、接着性を
有する硬化皮膜を半導体素子にピンホールなく均一に形
成することができ、従来の高温で長時間の熱処理を必要
とするポリイミド樹脂膜の製造法に比べて、大幅な省エ
ネルギー化が可能となり、その工業的価値は極めて大な
るものである。従って、本発明組成物は、塗料、染料、
コーティング剤、一般成形材料の下塗り剤などとして有
効であり、特に半導体用として有用である。[Effects of the Invention] As explained above, the primer composition of the present invention is useful in forming a strong hardened film on the surface of molded products made of metal materials or plastics, and is effective in modifying the surfaces of these products. Especially when used for semiconductor devices, a cured film with excellent heat resistance, electrical, mechanical properties, moisture-absorbing soldering properties, and adhesive properties can be uniformly applied to semiconductor devices without pinholes by simple operation using low-temperature and short-time heat treatment. Compared to conventional methods for producing polyimide resin films that require heat treatment at high temperatures and for long periods of time, this method enables significant energy savings, and its industrial value is extremely large. Therefore, the composition of the present invention can be applied to paints, dyes,
It is effective as a coating agent, an undercoat for general molding materials, etc., and is particularly useful for semiconductors.
【0046】[0046]
【実施例】以下、合成例、実施例を示し、本発明を具体
的に説明するが、本発明は下記の実施例に制限されるも
のではない。[Examples] The present invention will be specifically explained below with reference to synthesis examples and examples, but the present invention is not limited to the following examples.
【0047】〔合成例1〕…ポリイミド樹脂A撹拌器、
温度計及び窒素置換装置を具備したフラスコ内にテトラ
カルボン酸二無水物成分として2,2−ビス(3,4−
ベンゼンジカルボン酸アンヒドリド)パーフルオロプロ
パン4.4g(0.01モル)と3,3’,4,4’−
ビフェニルテトラカルボン酸二無水物26.5g(0.
09モル)、及び溶剤としてN−メチル−2−ピロリド
ン400gを仕込み、これにジアミン成分としてビス(
3−アミノプロピル)テトラメチルジシロキサン19.
8g(0.08モル)と2,2−ビス〔4−(4−アミ
ノフェノキシ)フェニル〕プロパン8.2g(0.02
モル)とを溶解したN−メチル−2−ピロリドン溶液を
反応系の温度が50℃を超えないように調節しつつ徐々
に滴下した。滴下終了後、更に室温で10時間撹拌し、
次にフラスコに水分受容器付還流冷却器を取り付けた後
、キシレン30gを加え、反応系を160℃に昇温し、
4時間160℃の温度を保持して反応させ、黄褐色透明
のポリイミド樹脂溶液を得た。なお、この反応において
3.4gの水が副生した。次いで、上記ポリイミド樹脂
溶液をメタノール中に投じ、再沈して樹脂を得た。この
樹脂を60℃で24時間減圧乾燥し、ポリイミド樹脂5
2.6gを単離した。[Synthesis Example 1]...Polyimide resin A stirrer,
2,2-bis(3,4-
Benzenedicarboxylic acid anhydride) perfluoropropane 4.4 g (0.01 mol) and 3,3',4,4'-
Biphenyltetracarboxylic dianhydride 26.5g (0.
09 mol) and 400 g of N-methyl-2-pyrrolidone as a solvent, and bis(
3-Aminopropyl)tetramethyldisiloxane19.
8 g (0.08 mol) and 8.2 g (0.02 mol) of 2,2-bis[4-(4-aminophenoxy)phenyl]propane.
A solution of N-methyl-2-pyrrolidone (mol) was gradually added dropwise while controlling the temperature of the reaction system so as not to exceed 50°C. After the addition was completed, the mixture was further stirred at room temperature for 10 hours.
Next, after attaching a reflux condenser with a water receiver to the flask, 30 g of xylene was added, and the reaction system was heated to 160 ° C.
The reaction was carried out while maintaining the temperature at 160° C. for 4 hours to obtain a yellowish brown transparent polyimide resin solution. In addition, 3.4 g of water was produced as a by-product in this reaction. Next, the polyimide resin solution was poured into methanol and reprecipitated to obtain a resin. This resin was dried under reduced pressure at 60°C for 24 hours, and polyimide resin 5
2.6g was isolated.
【0048】このポリイミド樹脂の赤外線吸収スペクト
ルを観測したところ、ポリアミック酸に基づく吸収は観
測されず、1780cm−1と1720cm−1とにイ
ミド基に基づく吸収が確認された。When the infrared absorption spectrum of this polyimide resin was observed, no absorption based on polyamic acid was observed, but absorption based on imide groups was confirmed at 1780 cm -1 and 1720 cm -1 .
【0049】〔合成例2〕…ポリイミド樹脂Bテトラカ
ルボン酸二無水物成分として3,3’,4,4’−ビフ
ェニルテトラカルボン酸二無水物29.4g(0.1モ
ル)を用い、ジアミン成分として1,2−ビス(γ−ア
ミノプロピルジメチルシリル)エタン2.6g(0.0
1モル)と2,2−ビス〔4−(4−アミノフェノキシ
)フェニル)プロパン36.9g(0.09モル)とを
用いる以外は合成例1と同様の操作により、ポリイミド
樹脂67.1gを得た。[Synthesis Example 2] 29.4 g (0.1 mol) of 3,3',4,4'-biphenyltetracarboxylic dianhydride was used as the tetracarboxylic dianhydride component of polyimide resin B, and diamine As a component, 2.6 g (0.0
67.1 g of polyimide resin was prepared in the same manner as in Synthesis Example 1 except that 36.9 g (0.09 mol) of 2,2-bis[4-(4-aminophenoxy)phenyl)propane were used. Obtained.
【0050】〔合成例3〕…ポリイミド樹脂C撹拌器、
温度計及び窒素置換装置を具備したフラスコ内にテトラ
カルボン酸二無水物成分として2,2−ビス(3,4−
ベンゼンジカルボン酸アンヒドリド)パーフルオロプロ
パン4.4g(0.01モル)と3,3’,4,4’−
ビフェニルテトラカルボン酸二無水物26.5g(0.
09モル)、及び溶剤としてN−メチル−2−ピロリド
ン400gを仕込み、これにジアミン成分として1,2
−ビス(γ−アミノプロピルジメチルシリル)エタン2
0.8g(0.08モル)と2,2−ビス〔4−(4−
アミノフェノキシ)フェニル〕プロパン8.2g(0.
02モル)とを溶解したN−メチル−2−ピロリドン溶
液69gを反応系の温度が50℃を超えないように調節
しつつ徐々に滴下した。滴下終了後、更に室温で10時
間撹拌し、次にフラスコに水分受容器付還流冷却器を取
り付けた後、キシレン30gを加え、反応系を160℃
に昇温し、4時間160℃の温度を保持して反応させ、
黄褐色透明のポリイミド樹脂溶液を得た。なお、この反
応において3.4gの水が副生した。
次いで、上記ポリイミド樹脂溶液をメタノール中に投じ
、再沈して樹脂を得た。この樹脂を60℃で24時間減
圧乾燥し、ポリイミド樹脂52.8gを単離した。[Synthesis Example 3]...Polyimide resin C stirrer,
2,2-bis(3,4-
4.4 g (0.01 mol) of benzenedicarboxylic acid anhydride) perfluoropropane and 3,3',4,4'-
Biphenyltetracarboxylic dianhydride 26.5g (0.
09 mol) and 400 g of N-methyl-2-pyrrolidone as a solvent, and 1,2 as a diamine component were charged.
-bis(γ-aminopropyldimethylsilyl)ethane 2
0.8 g (0.08 mol) and 2,2-bis[4-(4-
Aminophenoxy)phenyl]propane 8.2g (0.
69 g of a solution of N-methyl-2-pyrrolidone (02 mol) was gradually added dropwise while controlling the temperature of the reaction system so as not to exceed 50°C. After the dropwise addition was completed, the reaction system was further stirred at room temperature for 10 hours, and then a reflux condenser with a water receiver was attached to the flask, 30 g of xylene was added, and the reaction system was heated to 160°C.
The temperature was raised to 160°C for 4 hours to react.
A transparent yellow-brown polyimide resin solution was obtained. In addition, 3.4 g of water was produced as a by-product in this reaction. Next, the polyimide resin solution was poured into methanol and reprecipitated to obtain a resin. This resin was dried under reduced pressure at 60° C. for 24 hours to isolate 52.8 g of polyimide resin.
【0051】このポリイミド樹脂の赤外線吸収スペクト
ルを観測したところ、ポリアミック酸に基づく吸収は観
測されず、1780cm−1と1720cm−1とにイ
ミド基に基づく吸収が確認された。When the infrared absorption spectrum of this polyimide resin was observed, no absorption based on polyamic acid was observed, but absorption based on imide groups was confirmed at 1780 cm -1 and 1720 cm -1 .
【0052】また、このポリイミド樹脂は、テトラヒド
ロフラン、1,4−ジオキサン、シクロヘキサノン、ア
セトフェノンに可溶であった。Further, this polyimide resin was soluble in tetrahydrofuran, 1,4-dioxane, cyclohexanone, and acetophenone.
【0053】〔合成例4〕…ポリイミド樹脂Dテトラカ
ルボン酸二無水物成分として2,2−ビス(3,4−ベ
ンゼンジカルボン酸アンヒドリド)パーフルオロプロパ
ン13.3g(0.03モル)と3,3’,4,4’−
ビフェニルテトラカルボン酸二無水物20.6g(0.
07モル)とを用い、ジアミン成分として1,2−ビス
(γ−アミノプロピルジメチルシリル)エタン15.6
g(0.06モル)と1,4−ビス(4−アミノフェノ
キシ)ベンゼン11.7g(0.04モル)とを用いて
、合成例1と同様の操作により、ポリイミド樹脂54.
1gを得た。[Synthesis Example 4] 13.3 g (0.03 mol) of 2,2-bis(3,4-benzenedicarboxylic anhydride) perfluoropropane as the tetracarboxylic dianhydride component of polyimide resin D and 3, 3', 4, 4'-
Biphenyltetracarboxylic dianhydride 20.6g (0.
07 mol) and 15.6 mol of 1,2-bis(γ-aminopropyldimethylsilyl)ethane as the diamine component.
Polyimide resin 54.g (0.06 mol) and 11.7 g (0.04 mol) of 1,4-bis(4-aminophenoxy)benzene were prepared in the same manner as in Synthesis Example 1.
1g was obtained.
【0054】得られたポリイミド樹脂は、テトラヒドロ
フラン、1,4−ジオキサン、シクロヘキサノン、アセ
トフェノンのいずれの溶剤にも可溶であった。The obtained polyimide resin was soluble in any of the following solvents: tetrahydrofuran, 1,4-dioxane, cyclohexanone, and acetophenone.
【0055】〔合成例5〕…ポリイミド樹脂Eテトラカ
ルボン酸二無水物成分として2,2−ビス(3,4−ベ
ンゼンジカルボン酸アンヒドリド)パーフルオロプロパ
ン13.3g(0.03モル)と3,3’,4,4’−
ベンゾフェノンテトラカルボン酸二無水物22.6g(
0.07モル)とを用い、ジアミン成分として1,2−
ビス(γ−アミノプロピルジメチルシリル)エタン2.
6g(0.01モル)と2,2−ビス〔4−(4−アミ
ノフェノキシ)フェニル〕プロパン36.9g(0.0
9モル)とを用いて、合成例1と同様の操作により、ポ
リイミド樹脂68.9gを得た。[Synthesis Example 5] Polyimide resin E 13.3 g (0.03 mol) of 2,2-bis(3,4-benzenedicarboxylic acid anhydride) perfluoropropane as the tetracarboxylic dianhydride component and 3, 3', 4, 4'-
22.6 g of benzophenone tetracarboxylic dianhydride (
0.07 mol) and 1,2- as the diamine component.
Bis(γ-aminopropyldimethylsilyl)ethane2.
6 g (0.01 mol) and 36.9 g (0.0 mol) of 2,2-bis[4-(4-aminophenoxy)phenyl]propane
9 mol), 68.9 g of polyimide resin was obtained by the same operation as in Synthesis Example 1.
【0056】得られたポリイミド樹脂は、テトラヒドロ
フラン、1,4−ジオキサン、シクロヘキサノン、アセ
トフェノンのいずれの溶剤にも可溶であった。The obtained polyimide resin was soluble in any of the following solvents: tetrahydrofuran, 1,4-dioxane, cyclohexanone, and acetophenone.
【0057】〔合成例6〕…ポリイミド樹脂F(開環型
ポリイミド樹脂)
撹拌器、温度計及び窒素置換装置を具備したフラスコ内
にテトラカルボン酸二無水物成分として2,2−ビス(
3,4−ベンゼンジカルボン酸アンヒドリド)パーフル
オロプロパン4.4g(0.01モル)と3,3’,4
,4’−ビフェニルテトラカルボン酸二無水物26.5
g(0.09モル)、及び溶剤としてN−メチル−2−
ピロリドン400gを仕込み、これにジアミン成分とし
てビス(3−アミノプロピル)テトラメチルジシロキサ
ン19.8g(0.08モル)と2,2−ビス〔4−(
4−アミノフェノキシ)フェニル〕プロパン8.2g(
0.02モル)とを溶解したN−メチル−2−ピロリド
ン溶液を反応系の温度が50℃を超えないように調節し
つつ徐々に滴下した。滴下終了後、更に室温で10時間
撹拌し、黄褐色のポリイミド樹脂溶液を得た。次いで、
上記ポリイミド樹脂溶液をメタノール中に投じ、再沈し
て樹脂を得た。この樹脂を60℃で24時間減圧乾燥し
てポリイミド樹脂56gを単離した。[Synthesis Example 6] Polyimide resin F (ring-opening polyimide resin) 2,2-bis(
4.4 g (0.01 mol) of 3,4-benzenedicarboxylic acid anhydride) perfluoropropane and 3,3',4
, 4'-biphenyltetracarboxylic dianhydride 26.5
g (0.09 mol), and N-methyl-2- as a solvent.
400 g of pyrrolidone was charged, and 19.8 g (0.08 mol) of bis(3-aminopropyl)tetramethyldisiloxane and 2,2-bis[4-(
8.2 g of 4-aminophenoxy)phenyl propane (
A solution of N-methyl-2-pyrrolidone containing 0.02 mol) was gradually added dropwise while controlling the temperature of the reaction system so as not to exceed 50°C. After the addition was completed, the mixture was further stirred at room temperature for 10 hours to obtain a yellowish brown polyimide resin solution. Then,
The polyimide resin solution was poured into methanol and reprecipitated to obtain a resin. This resin was dried under reduced pressure at 60° C. for 24 hours to isolate 56 g of polyimide resin.
【0058】このポリイミド樹脂の赤外線吸収スペクト
ルを観測したところ、ポリアミック酸に基づく吸収が2
900cm−1と3100cm−1に確認された。When the infrared absorption spectrum of this polyimide resin was observed, it was found that the absorption due to polyamic acid was 2.
It was confirmed at 900 cm-1 and 3100 cm-1.
【0059】〔実施例・比較例〕表1,2,3に示すよ
うに前記合成例で得たポリイミド樹脂と下記のシランカ
ップリング剤を配合して18種のプライマー組成物を調
製した。[Examples/Comparative Examples] As shown in Tables 1, 2, and 3, 18 types of primer compositions were prepared by blending the polyimide resin obtained in the above synthesis example and the following silane coupling agent.
【0060】得られたプライマー組成物を用い、表1,
2,3に示す各種基材に対してプライマー塗布後(浸漬
法)、150℃で1時間キュアーし、その後エポキシ樹
脂成形材料(KMC165VA:信越化学工業(株)製
)を175℃、70kg/cm2で成形し、成形物を得
た。また、半導体素子に対して、プライマー組成物を塗
布し、150℃で1時間キュアー後、エポキシ樹脂成形
材料(KMC165VA)を175℃、70kg/cm
2で成形して成形物を得た(図1参照)。得られた成形
物に付いて、下記の試験を行なった。結果を表1,2,
3に併記する。接着性表1,2,3に示される各種テス
トピースにプライマー塗布後、直径15mm、高さ5m
mの円筒成形品を175℃、70kg/cm2、成形時
間2分の条件で成形し、180℃で4時間ポストキュア
ーした後、プッシュプルゲージで成形物と各種テストピ
ースとの剥離力を測定した。
ヒートサイクルによる耐クラック性
9.0mm×4.5mm×0.5mmの大きさのシリコ
ンチップを14PIN−ICフレーム(42アロイ)に
接着し、その後表1,2,3に示されるプライマー組成
物を塗布後、これにエポキシ樹脂組成物を成形条件17
5℃×2分で成形し、180℃で4時間ポストキュアー
した後、−50℃×30分〜180℃×30分の熱サイ
クルを繰り返し、1000サイクル後の樹脂クラック発
生率を測定した。
耐湿性
4DRAMチップを20PINのSOJフレームに接着
し、その後プライマー組成物をシリコンチップ表面とダ
イパッドの裏面(図1参照)に塗布後、これにエポキシ
樹脂組成物を成形条件175℃×3分で成形し、180
℃で4時間ポストキュアーした。これを121℃/10
0%RH雰囲気中に24時間放置して吸湿後、215℃
の半田浴に10秒間浸漬し、さらに121℃/100%
RH雰囲気中に300時間放置した時のアルミニウム配
線断線率を測定した。
吸湿後の半田クラック性
60pinQFP(サイズ20mm×14mm、ダイハ
ード下の樹脂厚0.7mm、ダイパッド寸法10mm×
8mm)のダイパッド裏面(図1参照)にプライマー組
成物を塗布後、これにエポキシ樹脂組成物を成形条件1
75℃×3分で成形し、180℃で4時間ポストキュア
ーした。このパッケージを85℃/85%RHの雰囲気
に24時間放置して、吸湿処理を行なった後、これを2
15℃の半田浴に10秒浸漬した。この時に発生するパ
ッケージのクラック発生不良率を調べた(試験数n=1
0)。
シランカップリング剤:(いずれも信越化学工業(株)
製)
KBM403・・・3−グリシドキシプロピルトリメト
キシシラン
KBM503・・・3−メタアクリロキシプロピルトリ
メトキシシラン
KBM603・・・N−(2−アミノエチル)3−アミ
ノプロピルトリメトキシシラン
KBM803・・・3−メルカプトプロピルトリメトキ
シシラン
KBE903・・・3−アミノプロピルトリエトキシシ
ラン
KBM303・・・2−(3,4−エポキシシクロヘキ
シルエチル)トリメトキシシラン
KBE402・・・3−グリシドキシプロピルメチルジ
エトキシシランUsing the obtained primer composition, Table 1,
After applying the primer to the various base materials shown in 2 and 3 (dipping method), it was cured at 150°C for 1 hour, and then an epoxy resin molding material (KMC165VA: manufactured by Shin-Etsu Chemical Co., Ltd.) was applied at 175°C at 70 kg/cm2. A molded product was obtained. In addition, a primer composition was applied to the semiconductor element, and after curing at 150°C for 1 hour, an epoxy resin molding material (KMC165VA) was applied at 175°C at 70 kg/cm.
2 to obtain a molded product (see FIG. 1). The following tests were conducted on the obtained molded product. The results are shown in Tables 1 and 2.
Also listed in 3. Adhesion After applying primer to various test pieces shown in Tables 1, 2, and 3, the diameter was 15 mm and the height was 5 m.
A cylindrical molded product of 500 m was molded at 175°C, 70kg/cm2, and a molding time of 2 minutes, and after post-curing at 180°C for 4 hours, the peel force between the molded product and various test pieces was measured using a push-pull gauge. . Crack resistance due to heat cycle A silicon chip with a size of 9.0 mm x 4.5 mm x 0.5 mm was adhered to a 14PIN-IC frame (42 alloy), and then the primer compositions shown in Tables 1, 2, and 3 were applied. After coating, the epoxy resin composition is molded under 17 conditions.
After molding at 5°C for 2 minutes and post-curing at 180°C for 4 hours, thermal cycles of -50°C for 30 minutes to 180°C for 30 minutes were repeated, and the resin crack occurrence rate after 1000 cycles was measured. A moisture-resistant 4DRAM chip is adhered to a 20-PIN SOJ frame, and then a primer composition is applied to the silicon chip surface and the back side of the die pad (see Figure 1), and then an epoxy resin composition is molded on this under molding conditions of 175°C for 3 minutes. 180
Post-cure was performed at ℃ for 4 hours. This is 121℃/10
After being left in a 0% RH atmosphere for 24 hours and absorbing moisture, it was heated to 215°C.
Immerse it in a solder bath for 10 seconds and then heat it to 121℃/100%
The aluminum wiring disconnection rate was measured when the aluminum wiring was left in an RH atmosphere for 300 hours. Solder crackability after moisture absorption 60pin QFP (size 20mm x 14mm, resin thickness under die hard 0.7mm, die pad size 10mm x
After applying the primer composition to the back surface of the die pad (see Figure 1), an epoxy resin composition was applied to it under molding conditions 1.
It was molded at 75°C for 3 minutes and post-cured at 180°C for 4 hours. This package was left in an atmosphere of 85°C/85% RH for 24 hours to absorb moisture, and then
It was immersed in a 15°C solder bath for 10 seconds. The crack generation defect rate of the package that occurs at this time was investigated (number of tests n = 1
0). Silane coupling agent: (Both Shin-Etsu Chemical Co., Ltd.)
) KBM403...3-glycidoxypropyltrimethoxysilane KBM503...3-methacryloxypropyltrimethoxysilane KBM603...N-(2-aminoethyl)3-aminopropyltrimethoxysilane KBM803...・3-mercaptopropyltrimethoxysilane KBE903...3-aminopropyltriethoxysilane KBM303...2-(3,4-epoxycyclohexylethyl)trimethoxysilane KBE402...3-glycidoxypropylmethyldiethoxy silane
【0061】[0061]
【表1】[Table 1]
【0062】[0062]
【表2】[Table 2]
【0063】[0063]
【表3】[Table 3]
【0064】以上の結果から、本発明のプライマー組成
物は、各種金属材料及び各種プラスチック類との接着性
に優れ、これらの表面改質に有効であることがわかる。
また、半導体素子に塗布した場合、耐クラック性、耐湿
性、吸湿半田特性に向上が認められ、本発明のプライマ
ー組成物を用いた低温短時間の加熱処理は、半導体製造
工程上コストダウン対策として極めて有効といえる。From the above results, it is clear that the primer composition of the present invention has excellent adhesion to various metal materials and various plastics, and is effective in modifying their surfaces. In addition, when applied to semiconductor elements, improvements in crack resistance, moisture resistance, and moisture absorption soldering properties were observed, and low-temperature, short-time heat treatment using the primer composition of the present invention can be used as a cost reduction measure in the semiconductor manufacturing process. It can be said to be extremely effective.
【図1】本発明の一実施例に係る樹脂封止型半導体装置
を示す断面図である。FIG. 1 is a cross-sectional view showing a resin-sealed semiconductor device according to an embodiment of the present invention.
1 シリコンチップ 2 ダイパッド 3 リードフレーム 4 ボンディングワイヤー 5 樹脂封止剤 6 プライマー組成物 1 Silicon chip 2 Die pad 3 Lead frame 4 Bonding wire 5 Resin sealant 6 Primer composition
Claims (2)
を有するポリイミド化合物と下記一般式(4)で示され
るシランカップリング剤とを配合してなることを特徴と
するプライマー組成物。 【化1】 【化2】1. A primer composition comprising a polyimide compound having a structural unit represented by the following general formula (1) and a silane coupling agent represented by the following general formula (4). [Chemical formula 1] [Chemical formula 2]
布された半導体装置。2. A semiconductor device coated with the primer composition according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3168855A JP2658632B2 (en) | 1991-06-12 | 1991-06-12 | Primer composition for bonding epoxy resin molding materials for semiconductor encapsulation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3168855A JP2658632B2 (en) | 1991-06-12 | 1991-06-12 | Primer composition for bonding epoxy resin molding materials for semiconductor encapsulation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04366194A true JPH04366194A (en) | 1992-12-18 |
JP2658632B2 JP2658632B2 (en) | 1997-09-30 |
Family
ID=15875808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3168855A Expired - Fee Related JP2658632B2 (en) | 1991-06-12 | 1991-06-12 | Primer composition for bonding epoxy resin molding materials for semiconductor encapsulation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2658632B2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07252459A (en) * | 1993-03-29 | 1995-10-03 | Hitachi Chem Co Ltd | Heat-resistant adhesive |
JPH0867754A (en) * | 1994-06-24 | 1996-03-12 | Toray Ind Inc | Curable composition |
WO2000041884A1 (en) * | 1999-01-13 | 2000-07-20 | Pi R & D Co., Ltd. | Composite film |
KR100570128B1 (en) * | 2002-07-03 | 2006-04-11 | 경상대학교산학협력단 | Polyimide silicone resin, solution composition thereof and polyimide silicone resin film prepared therefrom |
JP2006182601A (en) * | 2004-12-27 | 2006-07-13 | Sumitomo Osaka Cement Co Ltd | Paste containing carbon nanotube, method for manufacturing carbon nanotube film, carbon nanotube film and electric field electron emission element |
WO2009037834A1 (en) * | 2007-09-20 | 2009-03-26 | Nippon Kayaku Kabushiki Kaisha | Primer resin for semiconductor device, and semiconductor device |
JP4717167B2 (en) * | 1998-11-02 | 2011-07-06 | 株式会社クラレ | Adhesive composition for metal materials |
US8080319B2 (en) | 2005-10-21 | 2011-12-20 | Kippon Kayaku Kabushiki Kaisha | Thermosetting resin composition and use thereof |
JP2014501301A (en) * | 2010-12-31 | 2014-01-20 | コーロン インダストリーズ インク | Transparent polyimide film and method for producing the same |
JP2019057574A (en) * | 2017-09-20 | 2019-04-11 | トヨタ自動車株式会社 | Semiconductor device |
JP2020083930A (en) * | 2018-11-16 | 2020-06-04 | 日立化成株式会社 | Resin composition for semiconductor device, and semiconductor device using the same |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103207A (en) * | 1980-12-17 | 1982-06-26 | Fujitsu Ltd | Material for coating electronic components |
JPS60147470A (en) * | 1983-12-30 | 1985-08-03 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Distribution wire enamel |
JPS61171762A (en) * | 1985-01-28 | 1986-08-02 | Japan Synthetic Rubber Co Ltd | Soluble polyimide resin composition |
JPS62116668A (en) * | 1985-11-18 | 1987-05-28 | Toshiba Chem Corp | Resin composition |
JPS63189255A (en) * | 1987-01-31 | 1988-08-04 | Toshiba Corp | Thermal head |
JPS6469667A (en) * | 1987-08-21 | 1989-03-15 | Du Pont | Polyimide coating composition |
JPH01301752A (en) * | 1988-05-31 | 1989-12-05 | Hitachi Chem Co Ltd | Composition for protective film of semiconductor element and semiconductor |
JPH036226A (en) * | 1989-05-31 | 1991-01-11 | Shin Etsu Chem Co Ltd | Polyimide resin solution composition |
JPH0364355A (en) * | 1989-08-02 | 1991-03-19 | Shin Etsu Chem Co Ltd | Composition for protection of semiconductor element |
-
1991
- 1991-06-12 JP JP3168855A patent/JP2658632B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103207A (en) * | 1980-12-17 | 1982-06-26 | Fujitsu Ltd | Material for coating electronic components |
JPS60147470A (en) * | 1983-12-30 | 1985-08-03 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Distribution wire enamel |
JPS61171762A (en) * | 1985-01-28 | 1986-08-02 | Japan Synthetic Rubber Co Ltd | Soluble polyimide resin composition |
JPS62116668A (en) * | 1985-11-18 | 1987-05-28 | Toshiba Chem Corp | Resin composition |
JPS63189255A (en) * | 1987-01-31 | 1988-08-04 | Toshiba Corp | Thermal head |
JPS6469667A (en) * | 1987-08-21 | 1989-03-15 | Du Pont | Polyimide coating composition |
JPH01301752A (en) * | 1988-05-31 | 1989-12-05 | Hitachi Chem Co Ltd | Composition for protective film of semiconductor element and semiconductor |
JPH036226A (en) * | 1989-05-31 | 1991-01-11 | Shin Etsu Chem Co Ltd | Polyimide resin solution composition |
JPH0364355A (en) * | 1989-08-02 | 1991-03-19 | Shin Etsu Chem Co Ltd | Composition for protection of semiconductor element |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07252459A (en) * | 1993-03-29 | 1995-10-03 | Hitachi Chem Co Ltd | Heat-resistant adhesive |
JPH0867754A (en) * | 1994-06-24 | 1996-03-12 | Toray Ind Inc | Curable composition |
JP4717167B2 (en) * | 1998-11-02 | 2011-07-06 | 株式会社クラレ | Adhesive composition for metal materials |
WO2000041884A1 (en) * | 1999-01-13 | 2000-07-20 | Pi R & D Co., Ltd. | Composite film |
US6589662B1 (en) * | 1999-01-13 | 2003-07-08 | Pi R&D Co., Ltd. | Composite film |
KR100570128B1 (en) * | 2002-07-03 | 2006-04-11 | 경상대학교산학협력단 | Polyimide silicone resin, solution composition thereof and polyimide silicone resin film prepared therefrom |
JP2006182601A (en) * | 2004-12-27 | 2006-07-13 | Sumitomo Osaka Cement Co Ltd | Paste containing carbon nanotube, method for manufacturing carbon nanotube film, carbon nanotube film and electric field electron emission element |
JP4652044B2 (en) * | 2004-12-27 | 2011-03-16 | 住友大阪セメント株式会社 | Carbon nanotube film manufacturing method, carbon nanotube film with improved film peeling strength, and field electron emission device |
US8080319B2 (en) | 2005-10-21 | 2011-12-20 | Kippon Kayaku Kabushiki Kaisha | Thermosetting resin composition and use thereof |
WO2009037834A1 (en) * | 2007-09-20 | 2009-03-26 | Nippon Kayaku Kabushiki Kaisha | Primer resin for semiconductor device, and semiconductor device |
US8410620B2 (en) | 2007-09-20 | 2013-04-02 | Nippon Kayaku Kabushiki Kaisha | Primer resin for semiconductor device and semiconductor device |
JP5486309B2 (en) * | 2007-09-20 | 2014-05-07 | 日本化薬株式会社 | Primer resin for semiconductor device and semiconductor device |
JP2014501301A (en) * | 2010-12-31 | 2014-01-20 | コーロン インダストリーズ インク | Transparent polyimide film and method for producing the same |
JP2019057574A (en) * | 2017-09-20 | 2019-04-11 | トヨタ自動車株式会社 | Semiconductor device |
JP2020083930A (en) * | 2018-11-16 | 2020-06-04 | 日立化成株式会社 | Resin composition for semiconductor device, and semiconductor device using the same |
Also Published As
Publication number | Publication date |
---|---|
JP2658632B2 (en) | 1997-09-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20210301133A1 (en) | Curable polyimides | |
US7479412B2 (en) | Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method of producing semiconductor device | |
JP4219660B2 (en) | Wafer dicing die bond sheet | |
US5728473A (en) | Adhesive polyimide siloxane composition employable for combining electronic parts | |
JP2961642B2 (en) | Adhesive tape and liquid adhesive for electronic parts | |
JP4156869B2 (en) | Surface acoustic wave device film | |
JP4900244B2 (en) | Thermoplastic resin composition for semiconductor, adhesive film, lead frame, semiconductor device using the same, and method for manufacturing semiconductor device | |
JP2658632B2 (en) | Primer composition for bonding epoxy resin molding materials for semiconductor encapsulation | |
KR100481347B1 (en) | Adhesive Film for Semiconductor, Lead Frame and Semiconductor Device Using the Same | |
JP2992462B2 (en) | Adhesive tape and liquid adhesive for electronic parts | |
JP4213998B2 (en) | Adhesive resin composition and film adhesive using the same | |
KR100701988B1 (en) | Adhesive film, lead frame with adhesive film, and semiconductor device using same | |
JP5609357B2 (en) | Composition and composition sheet comprising the same | |
JP3410642B2 (en) | Heat resistant adhesive composition for electronic parts | |
JPH10212460A (en) | Adhesive tape for electronic part | |
JP3650493B2 (en) | Adhesive tape for electronic parts | |
KR100335663B1 (en) | Poly(Imide-Siloxane) Resin for Tapeless LOC Packaging | |
JP3535281B2 (en) | Adhesive tape and liquid adhesive for electronic parts | |
JP3347651B2 (en) | Adhesive tape for electronic components | |
JP2008095063A (en) | Adhesive film for semiconductor, lead frame with adhesive film for semiconductor and, semiconductor device with adhesive film for semiconductor, and semiconductor device | |
JP2003253220A (en) | Filmy adhesive and semiconductor-adhering tape | |
JPH10120785A (en) | Polyimide resin composition and film adhesive and its production | |
JP2002060488A (en) | Method for manufacturing polyamic acid and polyimide, and adhesive tape obtained by using them | |
JP2003105199A (en) | Polyimide resin composition solution and filmy adhesive agent | |
JP3601802B2 (en) | High adhesion heat resistant resin composition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090606 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090606 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100606 Year of fee payment: 13 |
|
LAPS | Cancellation because of no payment of annual fees |