JP2008095063A - Adhesive film for semiconductor, lead frame with adhesive film for semiconductor and, semiconductor device with adhesive film for semiconductor, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive film for a semiconductor having sufficient adhesion to a lead frame, easily released at room temperature from the lead frame or the encapsulating material after encapsulation with an encapsulating material, and used for manufacturing a semiconductor device with high workability, and a lead frame with the adhesive film for the semiconductor, a semiconductor device with the adhesive film for the semiconductor and the semiconductor device each using the adhesive film. <P>SOLUTION: The adhesive film for the semiconductor having a supporting film which is used in such a manner that the adhesive film is adhered to the back face of the lead frame to protect it and peeled off after encapsulation comprises a resin layer A containing a specific compound formed on at least one side of the supporting film wherein the 90 degree peel strength at 25°C between the resin layer A and the lead frame after the adhesive film for the semiconductor is adhered to the lead frame is not less than 5 N/m, and the 90 degree peel strength at 25°C between the resin layer A and the lead frame and the 90 degree peel strength at 25°C between the resin layer A and the encapsulating material after the lead frame to which the adhesive film for the semiconductor is adhered is encapsulated with the encapsulating material are not greater than 1,000 N/m. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an adhesive film for a semiconductor used for a method of protecting an adhesive film on the back surface of a lead frame by attaching it to the peeled surface after sealing, and in particular, it can be easily pulled from a sealed lead frame and a sealing material at room temperature. The present invention relates to an adhesive film for semiconductor, a semiconductor device with an adhesive film for semiconductor, a lead frame with an adhesive film for semiconductor, and a semiconductor device using them.

  Conventionally, a semiconductor device (semiconductor package) has a semiconductor element bonded to a die pad with an adhesive such as silver paste, and this is joined to a lead frame with a wire, and then the whole is sealed, leaving outer leads for external connection. A package with a structure has been used. However, in recent years, packages having various structures have been developed in response to demands for higher density, smaller area, and thinner semiconductor packages. Among them, for example, there are LOC (lead on chip) and COL (chip on lead) structures, but there are limitations in terms of reduction in area and thickness.

  On the other hand, in order to solve these problems, a package having a structure in which only one side (semiconductor element side) of the package is sealed and the exposed lead frame on the back side is used for external connection has been developed (Japanese Patent Laid-Open No. Hei 5-). No. 129473, JP-A-10-12773). In the package having this structure, since the lead frame does not protrude from the sealing material, the area can be reduced and the thickness can be reduced. One method for manufacturing a semiconductor device having this package structure is a manufacturing method comprising the following steps.

(1) a step of bonding a semiconductor adhesive film to the back surface of the lead frame
(2) bonding a semiconductor element to a die pad of a lead frame;
(3) connecting the inner lead of the lead frame and the semiconductor element;
(4) a step of sealing with a sealing material;
(5) a step of curing the sealing material,
(6) The process of peeling the adhesive film for semiconductors from a lead frame and a sealing material.

In the manufacture of a semiconductor device by this method, problems such as sealing resin flowing around the back surface of the lead frame are likely to occur in the step of sealing with a sealing material. Also, in the process of peeling the adhesive film for semiconductor from the lead frame and the sealing material after sealing with the sealing material, the adhesive and the lead frame and the sealing material are firmly bonded and peeled off at room temperature. There is a problem that the adhesive cannot be removed, and the adhesive peels off from the support film and adheres to the lead frame or the sealing material. Moreover, when peeling of the adhesive film for semiconductors is difficult at room temperature, it may be peeled off by applying heat, resulting in a problem that workability is lowered.
JP-A-5-129473 Japanese Patent Laid-Open No. 10-12773

  The present invention is an adhesive film for a semiconductor used in the above-described method for manufacturing a semiconductor device, which has sufficient adhesiveness to a lead frame and is sealed with a sealing material. An adhesive film for semiconductor that can be easily peeled off at room temperature and can be manufactured with high workability, a lead frame with an adhesive film for semiconductor using the same, a semiconductor device with an adhesive film for semiconductor, and a semiconductor device For the purpose.

That is, the present invention is (1) an adhesive film for a semiconductor having a support film, which is used in a method of protecting an adhesive film on the back surface of a lead frame by protecting the adhesive film and peeling it after sealing, on at least one side of the support film The resin layer A containing at least one compound selected from the compounds represented by the following general formula (I), the following general formula (II), the following general formula (III), and the following general formula (IV) is formed. The lead frame in which the 90 ° peel strength at 25 ° C. between the resin layer A after bonding the semiconductor adhesive film to the lead frame and the lead frame is 5 N / m or more, and the semiconductor adhesive film is bonded For semiconductors having a 90-degree peel strength at 25 ° C. of 1000 N / m or less between the resin layer A after sealing with a sealing material, the lead frame, and the sealing material On wearing film.

(R1, R2 and R3 are each independently an alkoxy group having 1 to 3 carbon atoms, a monovalent alkyl group having 1 to 6 carbon atoms or a monovalent aryl group having 6 to 12 carbon atoms; 6 represents a monovalent alkyl group, a monovalent aryl group having 6 to 12 carbon atoms, or a hydrogen atom.)

(R5, R6 and R7 are each independently an alkoxy group having 1 to 3 carbon atoms, a monovalent alkyl group having 1 to 6 carbon atoms or a monovalent aryl group having 6 to 12 carbon atoms; 6 represents a monovalent alkyl group, a monovalent aryl group having 6 to 12 carbon atoms, or a hydrogen atom.)

(R9, R10, and R11 each independently represents an alkoxy group having 1 to 3 carbon atoms, a monovalent alkyl group having 1 to 6 carbon atoms, or a monovalent aryl group having 6 to 12 carbon atoms.)

(R12, R13 and R14 are each independently an alkoxy group having 1 to 3 carbon atoms, a monovalent alkyl group having 1 to 6 carbon atoms or a monovalent aryl group having 6 to 12 carbon atoms; 6 represents a monovalent alkyl group, a monovalent aryl group having 6 to 12 carbon atoms, or a hydrogen atom.)
Moreover, this invention relates to the adhesive film for semiconductors as described in said (1) whose glass transition temperature of the said resin layer A is 100-300 degreeC.

  Moreover, this invention is described in said (1) or (2) in which the said resin layer A contains the thermoplastic resin in which the said resin layer A has either an amide group, an ester group, an imide group, an ether group, and a sulfone group. The present invention relates to an adhesive film for semiconductors.

  Moreover, this invention is (4) Said (1)-(3) whose ratio (A / C) of the thickness (A) of the said resin layer A and the thickness (C) of a support film is 0.5 or less. It is related with the adhesive film for semiconductors as described in any one of these.

  Moreover, this invention relates to the adhesive film for semiconductors as described in any one of said (1)-(4) whose thickness of the said resin layer A is 1-20 micrometers.

  In the present invention, (6) the support film is made of aromatic polyimide, aromatic polyamide, aromatic polyamideimide, aromatic polysulfone, aromatic polyethersulfone, polyphenylene sulfide, aromatic polyether ketone, polyarylate. , An adhesive film for a semiconductor according to any one of (1) to (5) selected from the group consisting of aromatic polyetheretherketone and polyethylene naphthalate.

  Moreover, this invention relates to the adhesive film for semiconductors as described in any one of said (1)-(6) whose glass transition temperature of the said support film is 200 degreeC or more.

  Moreover, this invention is (8) The semiconductor as described in any one of said (1)-(5) whose material of the said support film is chosen from the group which consists of copper, aluminum, stainless steel, and nickel. The present invention relates to an adhesive film.

  Moreover, this invention relates to the adhesive film for semiconductors as described in any one of said (1)-(8) whose thickness of the said support film is 5-100 micrometers.

Moreover, this invention is (10) The semiconductor as described in any one of said (1)-(9) whose linear thermal expansion coefficient in 20-200 degreeC of the said support film is 3.0 * 10 < ^-5 > or less. It relates to an adhesive film.

  Moreover, this invention is for semiconductors as described in any one of said (1)-(10) whose shrinkage rate at the time of heating the said support film at 200 degreeC for 2 hours is 0.15% or less. The present invention relates to an adhesive film.

  In the present invention, (12) the resin layer A is formed on one surface of the support film, and the resin layer B having no elasticity with an elastic modulus at 230 ° C. of 10 MPa or more is formed on the opposite surface. It is related with the adhesive film for semiconductors as described in any one of said (1)-(11) which is.

  Moreover, this invention relates to the lead frame with the adhesive film for semiconductors which adhere | attaches the adhesive film for semiconductors as described in any one of (13) said (1)-(12).

  Moreover, this invention is (14) The adhesive film for semiconductors of said (13) formed by adhere | attaching one side to the resin layer A of the adhesive film for semiconductors as described in any one of said (1)-(12). It is related with a lead frame.

  Moreover, this invention relates to the semiconductor device with the adhesive film for semiconductors using the adhesive film for semiconductors as described in any one of (15) said (1)-(12).

  The present invention also provides: (16) a semiconductor adhesive film, a lead frame formed by bonding one surface to the resin layer A of the semiconductor adhesive film, a semiconductor element bonded to a die pad of the lead frame, and an inner portion of the semiconductor element and the lead frame. The present invention relates to the semiconductor device with an adhesive film for a semiconductor according to the above (15), comprising a wire connecting the lead, an exposed surface of the lead frame, a semiconductor element, and a sealing material for sealing the wire.

  Moreover, this invention relates to the semiconductor device obtained by peeling the adhesive film for semiconductors from the semiconductor device with the adhesive film for semiconductors of (17) said (16) description.

  Moreover, this invention is (18) the adhesive film for semiconductors as described in any one of said (1)-(12), or the lead frame with the adhesive film for semiconductors as described in said (13) or (14). The present invention relates to a semiconductor device manufactured using the same.

  The present invention has sufficient adhesion to a lead frame, and can be easily peeled off from a lead frame and a sealing material after sealing with a sealing material at room temperature, and a semiconductor device is manufactured with high workability. It is possible to provide a semiconductor adhesive film, a lead frame with a semiconductor adhesive film, a semiconductor device with a semiconductor adhesive film, and a semiconductor device using the same.

  Next, embodiments of the present invention will be described in detail.

  The adhesive film for a semiconductor of the present invention is an adhesive film for a semiconductor having a support film, which is used in a method of protecting the adhesive film by attaching the adhesive film to the back surface of the lead frame and peeling it after sealing, and at least one side of the support film A resin layer A containing at least one compound selected from compounds represented by the following general formula (I), the following general formula (II), the following general formula (III), and the following general formula (IV): The lead that is formed and the 90 ° peel strength at 25 ° C. between the resin layer A after bonding the semiconductor adhesive film to the lead frame and the lead frame is 5 N / m or more, and the semiconductor adhesive film is bonded The 90 degree peel strength at 25 ° C. between the resin layer A after sealing the frame with the sealing material, the lead frame, and the sealing material is 1000 N / m or less.

  In the present invention, the 90 degree peel strength at 25 ° C. between the resin layer A and the lead frame is, for example, in accordance with JIS Z 0237 90 degree peeling method with the semiconductor adhesive film in the 90 degree direction with respect to the lead frame. Remove and measure. Specifically, at 25 ° C., the 90 ° peel strength when peeling the semiconductor adhesive film at a speed of 270 to 330 mm / min, preferably 300 mm / min, is measured with a 90 ° peel tester (manufactured by Tester Sangyo). Measured.

  In the present invention, the 90-degree peel strength between the resin layer A and the lead frame at 25 ° C. is 5 N / m or more, preferably 10 N / m or more, more preferably 50 N / m or more, and 100 N / m or more. More preferably, it is more preferably 150 N / m or more. When the 90-degree peel strength is less than 5 N / m, the adhesive film for semiconductor is easily peeled off from the lead frame, and the sealing resin enters between the lead frame and the resin layer A during the sealing process. is there. The 90-degree peel strength is preferably 2000 N / m or less, more preferably 1500 N / m or less, and still more preferably 1000 N / m or less.

The peel strength depends on the glass transition temperature (Tg) of the adhesive layer, the adhesive temperature, the material of the adherend, the wettability of the adhesive layer, and so on. In order to increase the 90 degree peel strength at 25 ° C. between the resin layer A and the lead frame after bonding to the lead frame to 5 N / m or more, the glass transition temperature (Tg) of the resin layer A, the bonding temperature, and the lead frame material The optimum conditions are appropriately selected in consideration of the wettability of the resin layer A and the like. Among these, the glass transition temperature (Tg) of the resin layer A and the bonding temperature have a great influence on the peel strength, and usually the bonding temperature is about 0 to 30 ° C. higher than the glass transition temperature (Tg) of the resin layer A. However, it is preferable to determine the optimum condition in consideration of the material of the lead frame or the wettability of the resin layer A.
In addition, although there is no restriction | limiting in particular as conditions which adhere | attach a semiconductor adhesive film and a lead frame in order to measure this peel strength, It is preferable to carry out on the adhesion conditions in the manufacturing method of the lead frame of this invention mentioned later. For example, as a lead frame, a copper lead frame, a copper lead frame coated with palladium or a lead frame made of 42 alloy is used, (1) temperature 250 ° C., pressure 6 MPa, time 10 seconds, (2) temperature 350 ° C., pressure 3 MPa, Bonding is performed under the bonding conditions of time 3 seconds or (3) temperature 230 ° C., pressure 8 MPa, time 10 seconds.

  In the present invention, the 90-degree peel strength between the resin layer A and the lead frame at 25 ° C. immediately before the sealing step is 5 N / m or more, preferably 10 N / m or more, more preferably 50 N / m or more. It is preferable. When the 90-degree peel strength immediately before the sealing step is less than 5 N / m, there arises a problem that a sealing resin enters between the lead frame and the resin layer A during the sealing step. Here, “immediately before performing the sealing step” means a state in which all the steps performed before the sealing step and before the sealing step are completed.

  In addition, the adhesive strength between the resin layer A and the lead frame can be improved by heating after the adhesive film for a semiconductor is bonded to the lead frame and before the sealing step. The heating temperature is not particularly limited, but it is preferable to heat at 100 ° C. or higher in order to improve the adhesive strength between the resin layer A and the lead frame. Moreover, it is preferable that it is 300 degrees C or less from the heat resistant point of a lead frame or the adhesive film for semiconductors. For the same reason, it is more preferably 130 ° C. or higher and 270 ° C. or lower. Moreover, although heating time is not specifically limited, In order to fully improve the adhesive strength of the resin layer A and a lead frame, 10 seconds or more are preferable. For the same reason, the heating time is more preferably from 1 minute to 2 hours.

  It is preferable to perform said heating process by the heating in various processes (For example, the hardening process of adhesives, such as a silver paste, a wire bond process, etc.) before moving to a sealing process from the point of productivity. For example, as described above, in the bonding step of the semiconductor element, heating is usually performed at 140 to 200 ° C. for 30 minutes to 2 hours in order to cure the adhesive used for bonding. Therefore, the above heating step can be performed by heating in these steps.

  In the present invention, the 90 ° peel strength at 25 ° C. between the resin layer A after sealing the lead frame to which the semiconductor adhesive film is bonded with the sealing material, the lead frame and the sealing material is 90 ° according to JIS Z 0237. According to the peeling method, the adhesive film for semiconductor is peeled off in the direction of 90 degrees with respect to the lead frame and the sealing material and measured. Specifically, at 25 ° C., 90 ° peel strength when peeling the adhesive film for semiconductor at a speed of 270 to 330 mm / min, preferably 300 mm / min, is measured by AUTOGRAPH AGS-1000G (manufactured by Shimadzu Corporation). ) Is measured.

  The 90 degree peel strength at 25 ° C. between the resin layer A, the lead frame, and the sealing material after sealing the lead frame to which the adhesive film for semiconductor of the present invention is bonded with a sealing material is the resin layer A and the lead frame or The peel strength of both the resin layer A and the sealing material is 1000 N / m or less, preferably 800 N / m or less, and more preferably 500 N / m or less. When the 90-degree peel strength exceeds 1000 N / m, there is a problem in that stress is applied to the lead frame and the sealing material to cause damage. The 90 degree peel strength is preferably 0 N / m or more, more preferably 3 N / m or more, and even more preferably 5 N / m or more.

  The sealing condition with the sealing material for measuring the 90-degree peel strength at 25 ° C. is not particularly limited, but the sealing may be performed under the sealing conditions in the semiconductor device manufacturing method of the present invention described later. preferable. For example, CEL-9600 (manufactured by Hitachi Chemical Co., Ltd.) is used as a sealing material, sealing is performed at a temperature of 180 ° C., a pressure of 7 MPa, and a time of 3 minutes, and then heated at 180 ° C. for 5 hours to seal the sealing material. Is preferably cured.

In the present invention, the 90 degree peel strength at 25 ° C. between the resin layer A, the lead frame, and the sealing material after sealing the lead frame bonded with the semiconductor adhesive film with the sealing material is set to 1000 N / m or less. The resin layer A contains at least one compound selected from the compounds represented by the following general formula (I), the following general formula (II), the following general formula (III), and the following general formula (IV). Is achieved.
The adhesive film for a semiconductor of the present invention contains at least one compound selected from the following general formula (I), general formula (II), general formula (III), and general formula (IV) on at least one surface of a support film. A resin layer A is formed.

  In general formula (I), R1, R2 and R3 are each independently an alkoxy group having 1 to 3 carbon atoms such as a methoxy group, an ethoxy group and a propoxy group; a methyl group, an ethyl group, a propyl group, an isopropyl group and a butyl group. Monovalent alkyl groups having 1 to 6 carbon atoms, such as isobutyl group, tert-butyl group, pentyl group and hexyl group; or monovalent alkyl groups having 6 to 12 carbon atoms such as phenyl group, tolyl group, xylyl group and naphthyl group R4 is a monovalent alkyl group having 1 to 6 carbon atoms such as methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, tert-butyl group, pentyl group and hexyl group; phenyl group , A tolyl group, a xylyl group, a naphthyl group or the like, a monovalent aryl group having 6 to 12 carbon atoms; or a hydrogen atom.

Examples of the general formula (I) include 3-aminopropyltrimethoxysilane, 3-aminopropylmethyldimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-phenylaminopropyltri Methoxysilane, 3-phenylaminopropyltriethoxysilane, 3-phenylaminopropylmethyldimethoxysilane, 3-phenylaminopropylmethyldiethoxysilane, 3-methylaminopropyltrimethoxysilane, 3-methylaminopropyltriethoxysilane, 3 -Ethylaminopropyltrimethoxysilane, 3-ethylaminopropyltriethoxysilane, etc. are mentioned.

  In general formula (II), R5, R6, and R7 are each independently the same C1-C3 alkoxy group, C1-C6 monovalent alkyl group, or C6-C12 monovalent. R8 represents a monovalent alkyl group having 1 to 6 carbon atoms, a monovalent aryl group having 6 to 12 carbon atoms, or a hydrogen atom.

Examples of the general formula (II) include N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, and N- (2- Aminoethyl) -3-aminopropyltriethoxysilane, N- (2-aminoethyl) -3-aminopropylmethyldiethoxysilane, N- (2-phenylaminoethyl) -3-aminopropyltrimethoxysilane, N- (2-Phenylaminoethyl) -3-aminopropyltriethoxysilane, N- (2-phenylaminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-methylaminoethyl) -3-aminopropyltrimethoxy Silane, N- (2-methylaminoethyl) -3-aminopropyltriethoxysilane, N- ( - ethyl aminoethyl) -3-aminopropyltrimethoxysilane, etc. N-(2-ethylamino-ethyl) -3-aminopropyl triethoxysilane and the like.

  In general formula (III), R9, R10, and R11 are each independently the same C1-C3 alkoxy group, C1-C6 monovalent alkyl group, or C6-C12 monovalent. Represents an aryl group.

Examples of the general formula (III) include 3-isocyanatopropyltrimethoxysilane, 3-isocyanatopropylmethyldimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-isocyanatopropylmethyldiethoxysilane. It is done.

  In general formula (IV), R12, R13, and R14 are each independently the same alkoxy group having 1 to 3 carbon atoms, monovalent alkyl group having 1 to 6 carbon atoms, or monovalent group having 6 to 12 carbon atoms. R15 represents a monovalent alkyl group having 1 to 6 carbon atoms, a monovalent aryl group having 6 to 12 carbon atoms, or a hydrogen atom.

Examples of the general formula (IV) include 3-ureidopropyltrimethoxysilane, 3-ureidopropylmethyldimethoxysilane, 3-ureidopropyltriethoxysilane, 3-ureidopropylmethyldiethoxysilane, and 3- (3-phenyl). Ureido) propyltriethoxysilane, 3- (3-methylureido) propyltriethoxysilane, 3- (3-ethylureido) propyltriethoxysilane, 3- (3-propylureido) propyltriethoxysilane, 3- (3 -Butylureido) propyltriethoxysilane, 3- (3-hexylureido) propyltriethoxysilane, 3- (3-phenylureido) propyltrimethoxysilane, 3- (3-methylureido) propyltrimethoxysilane, 3- (3-ethylurei ) Propyltrimethoxysilane, 3- (3-propyl ureido) propyl trimethoxy silane, 3- (3-butylureido) trimethoxysilane, etc. 3- (3-hexyl ureido) propyl trimethoxysilane.
In the present invention, these compounds represented by the general formulas (I) to (IV) may be used alone or in combination of two or more.
In the present invention, the resin layer A contains at least one compound selected from the general formulas (I) to (IV) from the lead frame and the sealing material after the sealing step. Is necessary for easy peeling at room temperature (25 ° C.). When at least one compound selected from the general formulas (I) to (IV) is not included in the resin layer A, the adhesive strength between the lead frame and the sealing material and the resin layer A becomes strong after the sealing step, and the semiconductor When the adhesive film is peeled off from the lead frame and the sealing material at room temperature (25 ° C.), problems such as breakage of the semiconductor adhesive film and deformation of the package occur, making it difficult to peel off the semiconductor adhesive film.

  The resin layer A in the present invention contains at least one compound selected from the general formulas (I) to (IV) and the resin (a).

In the present invention, the resin (a) used for forming the resin layer A is an amide group (—NHCO—), an ester group (—CO—O—), an imide group (—NR ₂ , where R is —CO— It is preferably a thermoplastic resin having an ether group (—O—) or a sulfone group (—SO ₂ —). In particular, a thermoplastic resin having an amide group, an ester group, an imide group or an ether group is preferable. Specifically, aromatic polyamide, aromatic polyester, aromatic polyimide, aromatic polyamideimide, aromatic polyether, aromatic polyetheramide imide, aromatic polyetheramide, aromatic polyesterimide and aromatic polyetherimide Etc. Among these, aromatic polyether amide imide, aromatic polyether imide and aromatic polyether amide are preferable from the viewpoint of heat resistance and adhesiveness.

  All of the above resins are produced by polycondensing an aromatic diamine or bisphenol as a base component with dicarboxylic acid, tricarboxylic acid, tetracarboxylic acid, aromatic chloride or a reactive derivative thereof as an acidic component. be able to. That is, it can be carried out by a known method used for the reaction between an amine and an acid, and there are no particular restrictions on various conditions. A known method is used for the polycondensation reaction of aromatic dicarboxylic acid, aromatic tricarboxylic acid or their reactive derivatives and diamine.

  The blending amount of at least one compound selected from the above general formulas (I) to (IV) is preferably 1 to 40 parts by weight in total with respect to 100 parts by weight of the resin (a), and 2 to 35 More preferably, it is 3 parts by weight, and particularly preferably 3 to 30 parts by weight. If the blending amount is less than 1 part by weight, the adhesion between the resin layer A, the lead frame and the sealing material becomes stronger after sealing, and it becomes difficult to peel off the semiconductor adhesive film at room temperature (25 ° C.). There is a tendency. Moreover, when there are more said compounding quantities than 40 weight part, gelatinization of a resin varnish, a fall of a viscosity, etc. will occur, and since it will reduce the stability of a varnish, there exists a tendency for preparation of a film to become difficult.

  In the present invention, a filler such as ceramic powder, glass powder, silver powder, copper powder, resin particles, rubber particles, or a coupling agent may be added to the resin (a). When adding a filler, the addition amount is preferably 1 to 30 parts by weight and more preferably 5 to 15 parts by weight with respect to 100 parts by weight of the resin (a). As the coupling agent, a coupling agent such as vinyl silane, epoxy silane, mercaptosilane, titanate, aluminum chelate or zircoaluminate can be used, and a silane coupling agent is preferable. Examples of silane coupling agents include vinyltrimethoxysilane, vinyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, and 3-glycidoxypropylmethyldisilane. Silane coupling agents such as ethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-methacryloxypropyltrimethoxysilane, and 3-mercaptopropyltrimethoxysilane, and of these, epoxysilane coupling agents having an epoxy group Is preferably used. The addition of the silane coupling agent improves the adhesion of the resin layer A to the support film, and when the adhesive film for a semiconductor of the present invention is peeled off, it is difficult for peeling to occur at the interface between the resin layer A and the support film. It is. The addition amount of the coupling agent is preferably 1 to 15 parts by weight and more preferably 2 to 10 parts by weight with respect to 100 parts by weight of the resin (a).

  In the present invention, from the viewpoints of adhesiveness and heat resistance, the glass transition temperature of the resin layer A is preferably 100 to 300 ° C, more preferably 130 to 280 ° C, and more preferably 150 to 250 ° C. Particularly preferred. When the glass transition temperature is lower than 100 ° C., the adhesive strength between the lead frame and the sealing material and the resin layer A tends to increase after the sealing process, and the resin layer softens in the wire bonding process. The force at the time of wire connection is dispersed and wire connection failure is likely to occur. On the other hand, when the glass transition temperature is higher than 300 ° C., the adhesive strength to the lead frame is lowered, so that the sealing material is liable to be peeled off during the transport process or sealed.

  The method of forming the resin layer A on the support film is not particularly limited, but at least one compound selected from the resin (a) and the general formulas (I) to (IV) is N-methyl-2-pyrrolidone, By applying a resin varnish prepared by dissolving in a solvent such as dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, dimethylformamide on one or both sides of the support film, and then removing the solvent by heat treatment, An adhesive film for a semiconductor having a two-layer structure or a three-layer structure can be obtained.

The temperature at which the support film coated with the resin varnish is heat-treated may be any temperature at which the solvent can be removed. In the above, the method for applying the resin varnish to the support film is not particularly limited, and for example, roll coating, reverse roll coating, gravure coating, bar coating, comma coating and the like can be used. Moreover, you may apply | coat through a support film in resin varnish.

In the present invention, the support film is not particularly limited, but a film made of a resin that can withstand heat during the resin varnish coating step, the drying step, and the semiconductor device assembly step is preferable. Such resins include aromatic polyimide, aromatic polyamide, aromatic polyamideimide, aromatic polysulfone, aromatic polyethersulfone, polyphenylene sulfide, aromatic polyetherketone, polyarylate, aromatic polyetheretherketone and polyethylene. It is preferably selected from the group consisting of naphthalate. In addition, the glass transition temperature of the support film is preferably 200 ° C. or higher and more preferably 250 ° C. or higher in order to improve heat resistance. In addition, by using the above heat-resistant resin film, the support film is not softened in the process of applying heat such as the bonding process, the wire bonding process, and the sealing process, and the work can be performed efficiently. Further, in order to reduce the warpage of the lead frame after the semiconductor adhesive film is attached to the lead frame, the linear thermal expansion coefficient of the support film at 20 to 200 ° C. is 3.0 × 10 ⁻⁵ / ° C. or less. Preferably, it is 2.5 × 10 ⁻⁵ / ° C. or less, and more preferably 2.0 × 10 ⁻⁵ / ° C. or less. In addition, in order to reduce the warpage of the lead frame after the semiconductor adhesive film is attached to the lead frame, the heat shrinkage rate when the support film is heated at 200 ° C. for 2 hours is 0.15% or less. Is preferably 0.13% or less, and more preferably 0.10% or less.

  The support film preferably has sufficiently high adhesion to the resin layer A. If the adhesiveness is low, when the adhesive film for a semiconductor is peeled off from the lead frame and the sealing material, peeling easily occurs at the interface between the resin layer A and the support film, and the resin layer A tends to remain on the lead frame and the sealing material. . Since the support film preferably has heat resistance and has sufficiently high adhesion to the resin layer A, a polyimide film is preferable.

  In order to sufficiently improve the adhesion to the resin layer A, the support film is preferably treated on the surface. The method for treating the surface of the support film is not particularly limited, and examples thereof include chemical treatment such as alkali treatment and silane coupling treatment, physical treatment such as sand mat treatment, plasma treatment, and corona treatment.

Although there is no restriction | limiting in particular in the thickness of said support film, It is preferable that it is 5-100 micrometers, and it is more preferable that it is 5-50 micrometers or less. When the thickness of the support film is less than 5 μm, the film tends to wrinkle and tends to be inferior in workability. When it exceeds 100 μm, the lead frame after the adhesive film for semiconductor is attached to the lead frame Warpage tends to increase.
Further, the material of the support film can be selected from the group consisting of copper, aluminum, stainless steel, and nickel other than the resin described above. By using the metal as the support film, the linear thermal expansion coefficient between the lead frame and the support film is made close, and the warpage of the lead frame after the semiconductor adhesive film is attached to the lead frame can be reduced.

  In the semiconductor adhesive film of the present invention, the ratio (A / C) of the resin layer thickness (A) to the support film thickness (C) is preferably 0.5 or less, and 0.3 or less. More preferred is 0.2 or less. The thickness (A) of the resin layer here is the thickness of only one side of the resin layer formed on the support film, and when the resin layer is provided on both sides, it is the thickness of the thicker resin layer.

When the ratio (A / C) exceeds 0.5, the film tends to curl due to the volume reduction of the resin layer A when the solvent is removed after coating, and the workability when adhering to the lead frame tends to decrease. It is in. When resin layers are provided on both sides of the support film, the ratio of the thicknesses of both resin layers (thickness of the resin layer provided on the side to be bonded to the lead frame: thickness of the resin layer provided on the opposite side) Is preferably 0.8: 1 to 1.2: 1, more preferably 0.9: 1 to 1.1: 1, and particularly preferably 1: 1. In addition, it is preferable that the thickness (A) of the resin layer A is 1-20 micrometers, it is preferable that it is 3-15 micrometers, and it is more preferable that it is 4-10 micrometers. When the thickness (A) of the resin layer A is less than 1 μm, the adhesiveness is inferior, and the sealing material tends to leak during sealing. When the thickness (A) of the resin layer A is more than 20 μm, the layer thickness of the adhesive film becomes thick and tends to be inferior in economic efficiency.
In order to cancel out the curling of the adhesive film for a semiconductor caused by the volume reduction of the resin layer A when the solvent is removed, the resin layer A may be provided on both surfaces of the support film. It is preferable to provide the resin layer A on one side of the support film and provide the resin layer on the opposite side that is difficult to soften at high temperature. That is, it is preferable to form the resin layer A having adhesiveness on one side of the support film and forming the resin layer B having no adhesiveness with an elastic modulus at 230 ° C. of 10 MPa or more on the opposite side.

  In the present invention, the elastic modulus at 230 ° C. of the resin layer B having no adhesiveness is preferably 10 MPa or more, more preferably 100 MPa or more, and further preferably 1000 MPa or more. When the elastic modulus at 230 ° C. of the resin layer B is less than 10 MPa, the resin layer B tends to be softened in a process of applying heat such as a wire bonding process, and tends to stick to a mold or a jig. The elastic modulus is preferably 2000 MPa or less, and more preferably 1500 MPa or less.

  The adhesive strength of the resin layer B having no adhesiveness to the mold or jig is not particularly limited as long as it is low enough not to stick to the mold or jig in the process, but the resin layer B and the mold at 25 ° C. The 90-degree peel strength with the jig or jig is preferably less than 5 N / m, and more preferably less than 1 N / m. The peel strength is measured, for example, after pressure-bonding to a brass mold for 10 seconds at a temperature of 250 ° C. and a pressure of 8 MPa.

  The glass transition temperature of the resin layer B having an elastic modulus at 230 ° C. of 10 MPa or more is not easily softened in an adhesion process, a wire bonding process, a sealing process, or the like, and is difficult to stick to a mold or a jig. Preferably, the temperature is higher than or equal to ° C, more preferably higher than or equal to 200 ° C, and even more preferably higher than or equal to 250 ° C. In addition, this glass transition temperature is preferably 350 ° C. or lower, and more preferably 300 ° C. or lower.

  There is no restriction | limiting in particular in the composition of resin (b) used for formation of said resin layer B, Both a thermoplastic resin and a thermosetting resin can be used. The composition of the thermoplastic resin is not particularly limited, but a thermoplastic resin having an amide group, an ester group, an imide group, an ether group or a sulfone group is preferable. The composition of the thermosetting resin is not particularly limited, and for example, epoxy resin, phenol resin, bismaleimide resin (for example, bismaleimide resin having bis (4-maleimidophenyl) methane as a monomer) and the like are preferable. A thermoplastic resin and a thermosetting resin can also be used in combination. When combining a thermoplastic resin and a thermosetting resin, it is preferable to set it as 5-100 weight part with respect to 100 weight part of thermoplastic resins, and it is more preferable to set it as 20-70 weight part.

  Furthermore, fillers such as ceramic powder, glass powder, silver powder, copper powder, resin particles, rubber particles, and coupling agents may be added to the resin (b). When adding a filler, the addition amount is preferably 1 to 30 parts by weight and more preferably 5 to 15 parts by weight with respect to 100 parts by weight of the resin (b). The addition amount of the coupling agent is preferably 1 to 20 parts by weight and more preferably 2 to 15 parts by weight with respect to 100 parts by weight of the resin (b).

  The method for forming the above resin layer B having no adhesiveness is not particularly limited, but the resin (b) is usually N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, dimethyl. A resin varnish prepared by dissolving in a solvent such as formamide can be formed on the support film and then heat-treated to remove the solvent. Or after apply | coating the precursor varnish which melt | dissolved the precursor (for example, polyamic acid) of resin (b) used as the heat resistant resin (b) (for example, polyimide resin) in the solvent by heat processing etc. after a varnish application | coating on a support film. It can be formed by heat treatment. In this case, the solvent is removed by heat treatment after coating, and the precursor is made into resin (b) (for example, imidization). It is preferable to use a resin varnish from the viewpoint of the surface state of the coated surface.

  The treatment temperature when the support film coated with the varnish is heat-treated for solvent removal, imidization or the like differs depending on whether it is a resin varnish or a precursor varnish. In the case of a resin varnish, the temperature may be any temperature at which the solvent can be removed. In the case of a precursor varnish, a treatment temperature equal to or higher than the glass transition temperature of the resin layer B is preferable for imidization.

  In the above resin layer B, the curling of the adhesive film for semiconductor caused by the volume reduction of the resin layer A is offset by the volume reduction or imidization of the resin layer B upon solvent removal or the shrinkage when the thermosetting resin is cured. can do.

  In the above, the method for applying the resin varnish or precursor varnish of the resin (b) to the support film is not particularly limited. For example, roll coating, reverse roll coating, gravure coating, bar coating, comma coating, etc. are used. Can be done. Moreover, you may apply | coat through a support film in a resin varnish or a precursor varnish.

  The adhesive film for a semiconductor of the present invention can be suitably used, for example, in a method for manufacturing a semiconductor device. When the adhesive film for semiconductor of the present invention is used in a method for producing a semiconductor device, it is preferable to produce the semiconductor device by a method comprising the following steps.

That is, (1) a step of bonding the semiconductor adhesive film of the present invention to a lead frame at 150 to 400 ° C.,
(2) a step of bonding the semiconductor element to the die pad of the lead frame using an adhesive such as silver paste and curing the adhesive such as silver paste by heating at 140 to 200 ° C. for 30 minutes to 2 hours;
(3) heating at 200 to 270 ° C. for 3 to 30 minutes to wire bond the inner lead of the lead frame and the semiconductor element with a gold wire or the like;
(4) The process of sealing a sealing material at 150-200 degreeC,
(5) A step of curing the encapsulant resin by heating at 150 to 200 ° C. for 4 to 6 hours,
(6) A step of peeling the adhesive film for semiconductor from the lead frame and the sealing material at 0 to 40 ° C.

  When the lead frame is composed of a plurality of patterns each having a die pad and an inner lead, the lead frame is divided into a plurality of semiconductor devices each having one semiconductor element as necessary.

  The lead frame with an adhesive film for a semiconductor of the present invention can be manufactured by adhering the above-mentioned adhesive film for a semiconductor in contact with the resin layer A on one side of the lead frame (see FIG. 2).

  In the present invention, the bonding condition of the semiconductor adhesive film to the lead frame is not particularly limited, but the bonding temperature is preferably 150 to 400 ° C, more preferably 180 to 350 ° C, and 200 to 300 ° C. Further preferred. When the bonding temperature is lower than 150 ° C., the bonding strength between the lead frame and the adhesive layer tends to decrease. If the bonding temperature exceeds 400 ° C., the lead frame tends to deteriorate.

  In the present invention, the adhesive pressure of the semiconductor adhesive film to the lead frame is preferably between 0.5 and 30 MPa, more preferably between 1 and 20 MPa, and even more preferably between 3 and 15 MPa. When the adhesive pressure is less than 0.5 MPa, the adhesive strength between the adhesive layer and the lead frame tends to decrease. Further, if the adhesion pressure exceeds 30 MPa, the lead frame tends to be damaged.

  In the present invention, the adhesion time of the semiconductor adhesive film to the lead frame is preferably 0.1 to 60 seconds, more preferably 1 to 30 seconds, and further preferably 3 to 20 seconds. When the adhesion time is less than 0.1 seconds, the adhesive strength between the adhesive layer and the lead frame tends to be lowered. When the adhesion time exceeds 60 seconds, workability and productivity tend to be reduced. Moreover, it is preferable to perform preheating for about 5 to 60 seconds before applying a pressure.

  In the present invention, the material of the lead frame is not particularly limited. For example, an iron-based alloy such as 42 alloy or copper or a copper-based alloy can be used. Further, the surface of the lead frame of copper or copper alloy can be coated with palladium, gold, silver, or the like.

  The structure of the semiconductor device manufactured using the semiconductor adhesive film of the present invention is not particularly limited. For example, only one side (semiconductor element side) of the package is sealed, and the exposed lead frame on the back side is used for external connection. A structure package (Non Lead Type Package) can be mentioned. Specific examples of the package include QFN (Quad Flat Non-leaded Package) and SON (Small Outline Non-leaded Package).

  The semiconductor device of the present invention includes, for example, a semiconductor adhesive film, a lead frame bonded to one side of the resin layer A of the semiconductor adhesive film, a semiconductor element bonded to a die pad of the lead frame, a semiconductor element and a lead frame. The semiconductor adhesive film for semiconductor is peeled off from a semiconductor device with an adhesive film having a structure including a wire connecting the inner lead, an exposed surface of the lead frame, a semiconductor element, and a sealing material for sealing the wire. The semiconductor device manufactured using the adhesive film for semiconductor of the present invention is excellent in terms of high density, small area, thinning, and the like, and is incorporated in information equipment such as a mobile phone.

  Next, the present invention will be specifically described by way of examples with reference to FIGS. 1 to 6, but these do not limit the present invention.

Production Example 1 (Production of Resins Used as Resin (a) in Examples 1, 3-6, 8, 9 and Comparative Example 1 and Resin (b) in Example 10)
295.2 g (0) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane in a 5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen inlet tube and a fractionation tower under a nitrogen atmosphere .72 mol) and 44.6 g (0.18 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were added and dissolved in 1500 g of N-methyl-2-pyrrolidone (hereinafter abbreviated as NMP). Further, this solution was cooled to 0 ° C., and 187.3 g (0.89 mol) of trimellitic anhydride chloride was added at this temperature. After the trimellitic anhydride chloride was dissolved, 100 g of triethylamine was added. After stirring at room temperature (25 ° C.) for 2 hours, the temperature was raised to 180 ° C. and reacted for 5 hours to complete imidization. The obtained reaction solution was poured into water to isolate the polymer. This was dried and then dissolved in NMP and poured into water to again isolate the polymer. Then, the polyetheramide imide powder refine | purified by drying under reduced pressure was obtained.

Production Example 2 (Production of Resin Used as Resin (a) in Examples 2, 7, and 10 and Comparative Example 2)
In a 1000 ml four-necked flask equipped with a stirrer, thermometer, nitrogen gas inlet tube and cooling tube, 120.9 g (0.41 mol) of 1,3-bis (3-aminophenoxy) benzene and 1,3-bis 44.0 g (0.18 mol) of (3-aminopropyl) tetramethyldisiloxane and 538.3 g of NMP were added, and the mixture was cooled to 0 ° C. with stirring in a nitrogen atmosphere, and then trimellitic anhydride chloride was added to 125. 0 g (0.59 mol) was added and the reaction was allowed to stir at room temperature (25 ° C.) for 1 hour. 72.6 g of triethylamine was added to the reaction solution, and the mixture was stirred at room temperature (25 ° C.) for 1 hour, and then stirred at 180 ° C. for 6 hours to be reacted. The obtained reaction solution was poured into water to isolate the polymer. This was dried and then dissolved in NMP and poured into water to again isolate the polymer. Then, the polyetheramide imide powder refine | purified by drying under reduced pressure was obtained.

Production Example 3 (Production of Resin Varnish Used as Resin (b) in Examples 2-5, 7-9, and Comparative Examples 1-3)
In a 5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen inlet tube and a fractionation tower, 172.4 g (0) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane in a nitrogen atmosphere .42 mol) and 153.7 g (0.42 mol) of 4,4′-methylenebis (2,6-diisopropylaniline) were added and dissolved in 1550 g of NMP. Further, this solution was cooled to 0 ° C., and 174.7 g (0.83 mol) of trimellitic anhydride chloride was added at this temperature. After the trimellitic anhydride chloride was dissolved, 130 g of triethylamine was added. After stirring at room temperature (25 ° C.) for 2 hours, the temperature was raised to 180 ° C. and reacted for 5 hours to complete imidization. The obtained reaction solution was poured into water to isolate the polymer. This was dried and then dissolved in NMP and poured into water to again isolate the polymer. Then, the polyamide-imide powder refine | purified by drying under reduced pressure was obtained. 120 g of the obtained polyamideimide powder and 6 g of a silane coupling agent (manufactured by Toray Dow Corning Silicone Co., Ltd., trade name: SH6040) were dissolved in 360 g of NMP to obtain a resin varnish.

Production Example 4 (Production of resin used as resin (a) in Comparative Example 3)
In a 5000 ml four-necked flask equipped with a stirrer, a thermometer, a nitrogen gas inlet tube and a condenser tube, 295.2 g (0.72 mol) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane, After adding 540.0 g (0.18 mol) of silicone diamine (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: X-22-161B) and 2400 g of diethylene glycol dimethyl ether and cooling to −10 ° C. with stirring in a nitrogen atmosphere. After adding 188.8 g (0.93 mol) of isophthalic acid chloride and stirring for 1 hour, 214 g of propylene oxide was added. Furthermore, after stirring at room temperature for 30 minutes, the temperature was raised to 40 ° C. and reacted for 5 hours. The obtained reaction solution was poured into methanol to isolate the polymer. This was dried and then dissolved in dimethylformamide and poured into methanol to again isolate the polymer. Then, the polysiloxane polyamide resin powder refine | purified by drying under reduced pressure was obtained.

Example 1
22 g of the polyetheramideimide resin produced in Production Example 1 and 1.1 g of 3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM903) were dissolved in 78 g of NMP to prepare a resin varnish.

  A polyimide film (UPILEX SGA manufactured by Ube Industries, Ltd.) obtained by subjecting a 50 μm thick surface to chemical treatment was used as a support film. A resin varnish was applied to one side of this polyimide film to a thickness of 50 μm, dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes, and then a resin layer A (1 μm thick on one side of the support film (2). The adhesive film for semiconductor of the structure of FIG. The resin layer A had a glass transition temperature of 223 ° C. and a 5 wt% reduction temperature of 415 ° C. The ratio (A / C) of the thickness (A) of the resin layer A and the thickness (C) of the support film was 0.18. Next, the obtained adhesive film for a semiconductor was bonded to a copper lead frame (50 mm × 200 mm) at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and a 90 ° peel strength between the resin layer A and the lead frame at 25 ° C. The peeling speed: 300 mm per minute (the same applies hereinafter) was measured. As a result, it was 20 N / m. Moreover, although the curl of the adhesive film for semiconductors was somewhat large, the workability during bonding was good. Next, as shown in FIG. 3, the lead frame (4) after bonding the semiconductor adhesive film (3) was placed on the base (11), and the warpage (X) in the longitudinal direction of the lead frame (4) was measured. 1.5 mm. Furthermore, using the lead frame to which the adhesive film was bonded, the semiconductor element was bonded, wire-bonded and sealed. The obtained package has a structure in which a plurality of the packages shown in FIG. 4 are connected. A silver paste was used for bonding the semiconductor elements, and the silver paste was cured by heating at 150 ° C. for 60 minutes. Wire bonding was performed by using a gold wire as the wire and heating at 260 ° C. for 5 minutes. In the sealing process, CEL-9600 (manufactured by Hitachi Chemical Co., Ltd.) is used as the sealing material, and the temperature is 180 ° C., the pressure is 7 MPa, the time is 3 minutes, and then the heating is performed at 180 ° C. for 5 hours. The material was cured. There was no problem in any process. In FIG. 4, 3 is a semiconductor adhesive film, 8 is a wire, 9 is a sealing material, 4 is a lead frame, 7 is a semiconductor element, and 6 is a die pad (silver paste is not shown). After the sealing process, the adhesive film for semiconductor is peeled off from the lead frame and the sealing material at room temperature (25 ° C.) (peeling speed: 300 mm per minute, the same applies hereinafter), and the 90-degree peel strength is 180 N / m. The resin layer was easily peeled off without remaining on the lead frame and the sealing material. The obtained package has a structure in which a plurality of the packages in FIG. 5 are connected. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 2
22 g of the polyetheramideimide resin produced in Production Example 2 and 1.1 g of 3-aminopropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE903) were dissolved in 78 g of NMP to prepare a resin varnish.

  A polyimide film (UPILEX SGA manufactured by Ube Industries, Ltd.) obtained by subjecting a 25 μm thick surface to chemical treatment was used as a support film. A semiconductor in which a resin varnish is applied to one side of this polyimide film to a thickness of 50 μm and dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a resin layer A having a thickness of 9 μm on one side of the support film An adhesive film was obtained. The resin layer A had a glass transition temperature of 155 ° C. and a 5 wt% reduction temperature of 421 ° C. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. Next, the resin varnish produced in Production Example 3 is applied to the opposite surface of the polyimide film having the resin layer A formed on one side of the support film to a thickness of 50 μm and dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes. Then, a resin layer B having a thickness of 9 μm was formed on one side of the support film. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. As a result, as shown in FIG. 6, an adhesive film for a semiconductor was obtained in which the resin layer A (1) and the resin layer B (10) were formed on each side of the support film (2). Next, the obtained adhesive film for a semiconductor was adhered to a copper lead frame (50 mm × 200 mm) coated with palladium at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and the resin layer A and the lead frame at 25 ° C. 90 When the peel strength was measured, it was 100 N / m, and there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.1 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing step, the adhesive film for semiconductor was peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90-degree peel strength was 200 N / m, and the resin layer adhered to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 3
22 g of the polyetheramideimide resin produced in Production Example 1 and 2.2 g of N- (2-aminoethyl) -3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM603) were dissolved in 78 g of NMP. A resin varnish was prepared.

  Except for using this resin varnish as the resin layer A, the same operation as in Example 2 was performed to obtain an adhesive film for a semiconductor in which the resin layer A and the resin layer B were formed on each side as shown in FIG. The thickness of the resin layer A was 9 μm, and the thickness of the resin layer B was 8 μm. The glass transition temperature of the resin layer A was 223 ° C., and the 5 wt% reduction temperature was 420 ° C. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. Next, the obtained adhesive film for semiconductor was bonded to a copper lead frame (50 mm × 200 mm) at a temperature of 230 ° C., a pressure of 6 MPa, and a time of 10 seconds, and a 90 ° peel strength between the resin layer A and the lead frame at 25 ° C. As a result of measurement, at 25 N / m, there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.1 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing process, the adhesive film for semiconductor was peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90-degree peel strength was 160 N / m, and the resin layer adhered to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 4
22 g of the polyetheramideimide resin produced in Production Example 1 and 4.4 g of 3-isocyanatopropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE9007) were dissolved in 78 g of NMP to prepare a resin varnish.

25 μm thick polyimide film (trade name: Kapton EN, 20 to 200 ° C. linear thermal expansion coefficient of 1.5 × 10 ⁻⁵ / ° C., heated at 200 ° C. for 2 hours as a support film The heat shrinkage rate was 0.02%). A semiconductor in which a resin varnish is applied to one side of this polyimide film to a thickness of 50 μm and dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a resin layer A having a thickness of 8 μm on one side of the support film An adhesive film was obtained. The glass transition temperature of the resin layer A was 225 ° C., and the 5 wt% reduction temperature was 410 ° C. The ratio (A / C) of the thickness (A) of the resin layer A and the thickness (C) of the support film was 0.32. Next, the resin varnish produced in Production Example 3 is applied to a thickness of 50 μm on the opposite side of the film having the resin layer A formed on one side of the support film, and dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes. Then, a resin layer B having a thickness of 8 μm was formed on one side of the support film. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. As a result, as shown in FIG. 6, an adhesive film for a semiconductor was obtained in which the resin layer A and the resin layer B were formed on each side of the support film. Next, the obtained adhesive film for a semiconductor was adhered to a copper lead frame (50 mm × 200 mm) coated with palladium at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and the resin layer A and the lead frame at 25 ° C. 90 When the peel strength was measured, it was 80 N / m, and there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.2 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing process, the adhesive film for semiconductor was peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90-degree peel strength was 120 N / m, and the resin layer adhered to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 5
22 g of the polyetheramideimide resin produced in Production Example 1 and 13.2 g of 3-ureidopropyltriethoxysilane (50% methanol solution) (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE585) are dissolved in 78 g of NMP to obtain a resin varnish. Was made.

  Except for using this resin varnish as the resin layer A, the same operation as in Example 2 was performed to obtain an adhesive film for a semiconductor in which the resin layer A and the resin layer B were formed on each side as shown in FIG. The thickness of the resin layer A was 9 μm, and the thickness of the resin layer B was 8 μm. The glass transition temperature of the resin layer A was 228 ° C., and the 5% by weight reduction temperature was 413 ° C. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. Next, the obtained adhesive film for semiconductor was bonded to a copper lead frame (50 mm × 200 mm) at a temperature of 230 ° C., a pressure of 6 MPa, and a time of 10 seconds, and a 90 ° peel strength between the resin layer A and the lead frame at 25 ° C. As a result of the measurement, at 30 N / m, there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.1 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing process, the adhesive film for semiconductor was peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90-degree peel strength was 120 N / m, and the resin layer adhered to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 6
22 g of the polyetheramideimide resin produced in Production Example 1, 4.4 g of 3-ureidopropyltriethoxysilane (50% methanol solution) (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE585), N- (2-aminoethyl) ) -3-aminopropylmethyldimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM602) 2.2 g was dissolved in NMP 78 g to prepare a resin varnish.

As a support film, a polyimide film having a thickness of 50 μm (manufactured by Kaneka Corporation, trade name: Apical NPI, linear thermal expansion coefficient at 20 to 200 ° C. is 1.6 × 10 ⁻⁵ / ° C., when heated at 200 ° C. for 2 hours. The heat shrinkage ratio was 0.07%). A semiconductor in which a resin varnish is applied to one side of this polyimide film to a thickness of 50 μm and dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a resin layer A having a thickness of 8 μm on one side of the support film An adhesive film was obtained. The glass transition temperature of the resin layer A was 224 ° C., and the 5% by weight reduction temperature was 418 ° C. The ratio (A / C) of the thickness (A) of the resin layer A and the thickness (C) of the support film was 0.16. Next, the obtained adhesive film for a semiconductor was adhered to a copper lead frame (50 mm × 200 mm) coated with palladium at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and the resin layer A and the lead frame at 25 ° C. 90 When the peel strength was measured, it was 35 N / m, and there was no problem of peeling during transportation. Moreover, although the curl of the adhesive film for semiconductors was somewhat large, the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 1.8 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing process, the adhesive film for semiconductor was peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90-degree peel strength was 110 N / m, and the resin layer adhered to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 7
22 g of the polyetheramideimide resin produced in Production Example 2, 2.2 g of 3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM903), 3-isocyanatopropyltriethoxysilane (Shin-Etsu Chemical Co., Ltd.) 2.2 g of company-made product name: KBE9007) was dissolved in 78 g of NMP to prepare a resin varnish.

  Except for using this resin varnish as the resin layer A, the same operation as in Example 2 was performed to obtain an adhesive film for a semiconductor in which the resin layer A and the resin layer B were formed on each side as shown in FIG. The thickness of the resin layer A was 9 μm, and the thickness of the resin layer B was 9 μm. The glass transition temperature of the resin layer A was 155 ° C., and the 5% by weight reduction temperature was 420 ° C. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. Next, the obtained adhesive film for a semiconductor was adhered to a copper lead frame (50 mm × 200 mm) coated with palladium at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and the resin layer A and the lead frame at 25 ° C. 90 When the peel strength was measured, it was 80 N / m, and there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.1 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing process, the adhesive film for semiconductor was peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90 ° peel strength was 180 N / m, and the resin layer adhered to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 8
22 g of the polyetheramideimide resin produced in Production Example 1, 3-ureidopropyltriethoxysilane (50% methanol solution) (Shin-Etsu Chemical Co., Ltd., trade name: KBE585) 4.4 g, 3-isocyanatopropyltriethoxy 2.2 g of silane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE9007) was dissolved in 78 g of NMP to prepare a resin varnish.

  Except for using this resin varnish as the resin layer A, the same operation as in Example 2 was performed to obtain an adhesive film for a semiconductor in which the resin layer A and the resin layer B were formed on each side as shown in FIG. The thickness of the resin layer A was 9 μm, and the thickness of the resin layer B was 8 μm. The glass transition temperature of the resin layer A was 225 ° C., and the 5 wt% reduction temperature was 420 ° C. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. Next, the obtained adhesive film for a semiconductor was bonded to a copper lead frame (50 mm × 200 mm) at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and a 90-degree peel strength between the resin layer A and the lead frame at 25 ° C. As a result of measurement, at 50 N / m, there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.1 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing process, the adhesive film for semiconductor is peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90 degree peel strength is 150 N / m, and the resin layer adheres to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 9
22 g of the polyetheramideimide resin produced in Production Example 1 and 8.8 g of 3-ureidopropyltriethoxysilane (50% methanol solution) (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE585) are dissolved in 78 g of NMP, and the resin varnish is obtained. Was made.

  As a support film, a 18 μm-thick copper foil (manufactured by Nippon Electrolytic Co., Ltd., trade name: HLB) was used. A semiconductor in which a resin varnish is applied to one side of this copper foil to a thickness of 30 μm and dried at 100 ° C. for 10 minutes and at 200 ° C. for 10 minutes to form a resin layer A having a thickness of 5 μm on one side of the support film An adhesive film was obtained. The glass transition temperature of the resin layer A was 226 ° C., and the 5% by weight reduction temperature was 416 ° C. The ratio (A / C) of the thickness (A) of the resin layer A and the thickness (C) of the support film was 0.28. Next, the resin varnish produced in Production Example 3 is applied to the opposite side of the film having the resin layer A formed on one side of the support film to a thickness of 30 μm and dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes. Then, a resin layer B having a thickness of 5 μm was formed on one side of the support film. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. As a result, as shown in FIG. 6, an adhesive film for a semiconductor was obtained in which the resin layer A and the resin layer B were formed on each side of the support film. Next, the obtained adhesive film for a semiconductor was adhered to a copper lead frame (50 mm × 200 mm) coated with palladium at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and the resin layer A and the lead frame at 25 ° C. 90 When the peel strength was measured, it was 40 N / m, and there was no problem of peeling off during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, when the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured, it was less than 0.1 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing process, the adhesive film for semiconductor is peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90-degree peel strength is 140 N / m, and the resin layer adheres to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Example 10
22 g of the polyetheramideimide resin produced in Production Example 2 and 1.1 g of 3-aminopropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBE903) were dissolved in 78 g of NMP to prepare a resin varnish. This resin varnish was used as the resin layer A. 60 g of the polyetheramideimide resin produced in Production Example 1 and 40 g of bis (4-maleimidophenyl) methane were dissolved in 300 g of NMP to obtain a resin varnish. This resin varnish was used as the resin layer B. By the same operation as in Example 2, an adhesive film for a semiconductor in which the resin layer A and the resin layer B were formed on each side as shown in FIG. 6 was obtained. The thickness of the resin layer A was 9 μm, and the thickness of the resin layer B was 8 μm. The glass transition temperature of the resin layer A was 155 ° C., and the 5% by weight reduction temperature was 421 ° C. The elastic modulus at 230 ° C. of the resin layer B was 800 MPa. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. As a result, as shown in FIG. 6, an adhesive film for a semiconductor was obtained in which the resin layer A and the resin layer B were formed on each side of the support film. Next, the obtained adhesive film for a semiconductor was adhered to a copper lead frame (50 mm × 200 mm) coated with palladium at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and the resin layer A and the lead frame at 25 ° C. 90 When the peel strength was measured, it was 110 N / m, and there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.2 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing step, the adhesive film for semiconductor was peeled off from the lead frame and the sealing material at room temperature (25 ° C.). The 90-degree peel strength was 200 N / m, and the resin layer adhered to the lead frame and the sealing material. It was easily peeled off without remaining. Further, this package was divided to produce packages each having one semiconductor element shown in FIG. 5, but there was no problem during the process.

Comparative Example 1
22 g of the polyetheramide imide resin produced in Production Example 1 was dissolved in 78 g of NMP to prepare a resin varnish.

  A semiconductor adhesive film in which the resin layer A and the resin layer B were formed on each side as shown in FIG. 6 was obtained in the same manner as in Example 2 except that the resin varnish resin layer A was used. The thickness of the resin layer A was 9 μm, and the thickness of the resin layer B was 8 μm. The glass transition temperature of the resin layer A was 223 ° C., and the 5 wt% reduction temperature was 431 ° C. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. Next, the obtained adhesive film for a semiconductor was bonded to a copper lead frame (50 mm × 200 mm) at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and a 90-degree peel strength between the resin layer A and the lead frame at 25 ° C. As a result of the measurement, at 80 N / m, there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.1 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing step, when the semiconductor adhesive film is peeled off from the lead frame and the sealing material at room temperature (25 ° C.), the adhesive strength between the resin layer A, the lead frame, and the sealing material is too strong. It broke and could not be peeled off. The 90 degree peel strength at 25 ° C. between the resin layer A, the lead frame and the sealing material could not be measured because the film was broken, and the peel strength at break was 1800 N / m.

Comparative Example 2
22 g of the polyetheramideimide resin produced in Production Example 2 and 4.4 g of 3-glycidoxypropyltrimethoxysilane (made by Toray Dow Corning Silicone Co., Ltd., trade name: SH6040) are dissolved in 78 g of NMP to prepare a resin varnish. did.

  Except that this resin varnish was used for forming the resin layer A, the same operation as in Example 2 was performed to obtain an adhesive film for a semiconductor in which the resin layer A and the resin layer B were formed on each side as shown in FIG. The thickness of the resin layer A was 9 μm, and the thickness of the resin layer B was 9 μm. The glass transition temperature of the resin layer A was 154 ° C., and the 5% by weight reduction temperature was 420 ° C. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. Next, the obtained adhesive film for a semiconductor was bonded to a copper lead frame (50 mm × 200 mm) at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and a 90-degree peel strength between the resin layer A and the lead frame at 25 ° C. As a result of the measurement, at 120 N / m, there was no problem of peeling during transportation. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process. Also, the adhesive film for semiconductors was hardly curled, and the workability during bonding was good. Next, as shown in FIG. 3, the warpage (X) in the longitudinal direction of the lead frame after bonding the semiconductor adhesive film was measured and found to be 0.1 mm. Further, using the lead frame to which the adhesive film is bonded, the semiconductor element is bonded, wire-bonded and sealed in the same manner as in Example 1 to produce a package having a structure in which a plurality of packages shown in FIG. 4 are connected. However, no problem occurred in any of the steps. After the sealing step, when the semiconductor adhesive film is peeled off from the lead frame and the sealing material at room temperature (25 ° C.), the adhesive strength between the resin layer A, the lead frame, and the sealing material is too strong. It broke and could not be peeled off. The 90 degree peel strength at 25 ° C. between the resin layer A, the lead frame and the sealing material could not be measured because the film was broken, and the peel strength at break was 1800 N / m.

Comparative Example 3
22 g of polysiloxane polyamide resin produced in Production Example 4 and 2.2 g of N- (2-aminoethyl) -3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM603) are dissolved in 78 g of NMP, A resin varnish was prepared.

  A polyimide film (UPILEX SGA manufactured by Ube Industries, Ltd.) obtained by subjecting a 25 μm thick surface to chemical treatment was used as a support film. A semiconductor in which a resin varnish is applied to one side of this polyimide film to a thickness of 50 μm and dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a resin layer A having a thickness of 9 μm on one side of the support film An adhesive film was obtained. The resin layer A had a glass transition temperature of 182 ° C. and a 5 wt% reduction temperature of 380 ° C. The ratio (A / C) of the thickness (A) of the resin layer A to the thickness (C) of the support film was 0.36. Next, the resin varnish produced in Production Example 3 is applied to the opposite surface of the polyimide film having the resin layer A formed on one side of the support film to a thickness of 50 μm and dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes. Then, a resin layer B having a thickness of 9 μm was formed on one side of the support film. The resin layer B had a glass transition temperature of 253 ° C., a 5 wt% reduction temperature of 416 ° C., and an elastic modulus at 230 ° C. of 1500 MPa. As a result, as shown in FIG. 6, an adhesive film for a semiconductor was obtained in which the resin layer A (1) and the resin layer B (10) were formed on each side of the support film (2). Next, the obtained adhesive film for a semiconductor was bonded to a copper lead frame (50 mm × 200 mm) at a temperature of 250 ° C., a pressure of 6 MPa, and a time of 10 seconds, and a 90-degree peel strength between the resin layer A and the lead frame at 25 ° C. When measured, it was peeled off at the time of conveyance at 0 N / m, and the subsequent process could not be performed. Further, the side surface of the resin layer B of the obtained adhesive film for a semiconductor was bonded to a brass metal plate at 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and 90 ° between the resin layer B and the brass metal plate at 25 ° C. When the peel strength was measured, it was 0 N / m, and there was no problem of sticking to the mold or jig during the process.

  From the results of Examples 1 to 10, it is possible to manufacture an adhesive film for a semiconductor that can be easily peeled at room temperature (25 ° C.) from the lead frame and the sealing material, and to manufacture a semiconductor package with high workability and productivity. It was shown that it can. The adhesive film for a semiconductor of the present invention has high adhesion to a lead frame at 25 ° C. and can be easily peeled off from the lead frame and the sealing material at room temperature (25 ° C.) after resin sealing. It is possible to manufacture with high workability and productivity. In contrast, the 90 degree peel strength at 25 ° C. between the resin layer A after sealing the lead frame to which the semiconductor adhesive film is bonded with the sealing material, the lead frame and the sealing material exceeds 1000 N / m. In the adhesive films for semiconductors of Examples 1 and 2, since the adhesive strength between the resin layer A, the lead frame, and the sealing material was too strong, the film was broken and could not be peeled off. The adhesive film for semiconductor of Comparative Example 3 in which the 90-degree peel strength at 25 ° C. between the resin layer A and the lead frame after bonding the semiconductor adhesive film to the lead frame is less than 5 N / m is peeled off during transportation. The later steps could not be performed.

It is sectional drawing of the adhesive film for semiconductors of 1 aspect of this invention. It is sectional drawing of the lead frame with the adhesive film for semiconductors which adhere | attached the adhesive film for semiconductors of 1 aspect of this invention on the lead frame. It is a side view which shows the measuring method of the curvature of the lead frame which adhere | attached the adhesive film for semiconductors. It is sectional drawing which shows the semiconductor device provided with the adhesive film for semiconductors of 1 aspect of this invention. It is sectional drawing which shows the semiconductor device produced using this invention adhesive film for semiconductors. It is sectional drawing of the adhesive film for semiconductors of 1 aspect of this invention.

Explanation of symbols

1 Resin layer A
2 Support film 3 Adhesive film for semiconductor 4 Lead frame 5 Inner lead 6 Die pad 7 Semiconductor element 8 Wire 9 Sealing material 10 Resin layer B
11 units

Claims (18)

An adhesive film for a semiconductor having a support film, which is used for a method of attaching and protecting an adhesive film on the back surface of the lead frame and peeling after sealing, and at least one side of the support film has the following general formula (I), A resin layer A containing at least one compound selected from the compounds represented by the following general formula (II), the following general formula (III), and the following general formula (IV) is formed, and an adhesive film for semiconductors The lead frame to which the 90 degree peel strength at 25 ° C. between the resin layer A and the lead frame after adhering to the lead frame is 5 N / m or more and the semiconductor adhesive film is bonded is sealed with a sealing material. The adhesive film for semiconductors whose 90 degree peel strength in 25 degreeC with the following resin layer A, a lead frame, and a sealing material is 1000 N / m or less.

(R1, R2 and R3 are each independently an alkoxy group having 1 to 3 carbon atoms, a monovalent alkyl group having 1 to 6 carbon atoms or a monovalent aryl group having 6 to 12 carbon atoms; 6 represents a monovalent alkyl group, a monovalent aryl group having 6 to 12 carbon atoms, or a hydrogen atom.)

(R5, R6 and R7 are each independently an alkoxy group having 1 to 3 carbon atoms, a monovalent alkyl group having 1 to 6 carbon atoms or a monovalent aryl group having 6 to 12 carbon atoms; 6 represents a monovalent alkyl group, a monovalent aryl group having 6 to 12 carbon atoms, or a hydrogen atom.)

(R9, R10, and R11 each independently represents an alkoxy group having 1 to 3 carbon atoms, a monovalent alkyl group having 1 to 6 carbon atoms, or a monovalent aryl group having 6 to 12 carbon atoms.)

(R12, R13 and R14 are each independently an alkoxy group having 1 to 3 carbon atoms, a monovalent alkyl group having 1 to 6 carbon atoms or a monovalent aryl group having 6 to 12 carbon atoms; 6 represents a monovalent alkyl group, a monovalent aryl group having 6 to 12 carbon atoms, or a hydrogen atom.)   The adhesive film for semiconductor according to claim 1, wherein the resin layer A has a glass transition temperature of 100 to 300 ° C.   The adhesive film for a semiconductor according to claim 1 or 2, wherein the resin layer A contains a thermoplastic resin having any one of an amide group, an ester group, an imide group, an ether group, and a sulfone group.   The adhesive film for a semiconductor according to any one of claims 1 to 3, wherein a ratio (A / C) of the thickness (A) of the resin layer A and the thickness (C) of the support film is 0.5 or less. .   The thickness of the said resin layer A is 1-20 micrometers, The adhesive film for semiconductors as described in any one of Claims 1-4.   The material of the support film is aromatic polyimide, aromatic polyamide, aromatic polyamideimide, aromatic polysulfone, aromatic polyethersulfone, polyphenylene sulfide, aromatic polyetherketone, polyarylate, aromatic polyetheretherketone and polyethylene. The adhesive film for a semiconductor according to any one of claims 1 to 5, which is selected from the group consisting of naphthalate.   The adhesive film for semiconductor according to any one of claims 1 to 6, wherein a glass transition temperature of the support film is 200 ° C or higher.   The adhesive film for semiconductor according to any one of claims 1 to 5, wherein a material of the support film is selected from the group consisting of copper, aluminum, stainless steel, and nickel.   The thickness of the said support film is 5-100 micrometers, The adhesive film for semiconductors as described in any one of Claims 1-8. The linear thermal expansion coefficient in 20-200 degreeC of the said support film is 3.0 * 10 < ^-5 > or less, The adhesive film for semiconductors as described in any one of Claims 1-9.   The shrinkage rate when the support film is heated at 200 ° C for 2 hours is 0.15% or less. The adhesive film for a semiconductor according to any one of claims 1 to 10.   The said resin layer A is formed in the single side | surface of the said support film, The resin layer B which does not have the adhesiveness whose elasticity modulus in 230 degreeC is 10 Mpa or more is formed in the other surface. The adhesive film for semiconductors according to one item.   The lead frame with the adhesive film for semiconductors which adhere | attaches the adhesive film for semiconductors as described in any one of Claims 1-12.   The lead frame with an adhesive film for a semiconductor according to claim 13, wherein one side is adhered to the resin layer A of the adhesive film for a semiconductor according to claim 1.   The semiconductor device with the adhesive film for semiconductors using the adhesive film for semiconductors as described in any one of Claims 1-12. Adhesive film for semiconductors,
A lead frame formed by adhering one side to the resin layer A of an adhesive film for a semiconductor;
A semiconductor element bonded to the die pad of the lead frame,
A wire connecting the semiconductor element and the inner lead of the lead frame;
16. The semiconductor device with an adhesive film for a semiconductor according to claim 15, comprising a sealing material for sealing the exposed surface of the lead frame, the semiconductor element, and the wire.   The semiconductor device obtained by peeling the adhesive film for semiconductors from the semiconductor device with the adhesive film for semiconductors of Claim 16.   The semiconductor device produced using the adhesive film for semiconductors as described in any one of Claims 1-12, or the lead frame with the adhesive film for semiconductors of Claim 13 or 14.

Images