JP2007073921A - Film for semiconductor, composite metal layer therewith, film with wiring circuit and semiconductor device therewith using the same, semiconductor device, and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a composite metal layer with a film for a semiconductor; a film for the semiconductor; a film with a wiring circuit and a semiconductor device with the film for the semiconductor using the film for the semiconductor; a semiconductor device; and a manufacturing method of the semiconductor device that allows highly workable and highly productive manufacturing of a semiconductor device, in which a wiring circuit can be easily formed, adhesion between a metal layer that serves as a circuit and a layer that is later removed is sufficiently maintained during circuit formation, and an unnecessary layer can be easily peeled and removed from the sealing resin and the wiring circuit after plastic molding. <P>SOLUTION: A film for a semiconductor includes a composite metal layer which includes a first metal layer 1 and a second metal layer 2 having a thickness of 0.01 μm or more and 3 μm or less, and at least a resin layer A5; and is laminated so that the resin layer A5 and the second metal layer 2 are in contact. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a composite metal layer with a film for a semiconductor, a film for a semiconductor, a film with a wiring circuit used therein, a semiconductor device with a film for a semiconductor, a semiconductor device, and a method for manufacturing the semiconductor device.

  In recent years, in order to reduce the size and thickness of a semiconductor package, a package having a structure in which only one side (semiconductor element side) of a lead frame is sealed and the exposed lead on the back side is used for external connection has been developed. Since the package having this structure does not protrude from the sealing resin, there is an advantage that the area can be reduced and the thickness can be reduced. As a method for manufacturing such a semiconductor package, for example, a method of attaching an adhesive tape to one side of a lead frame, mounting a chip on the opposite side of the lead frame, wire bonding, resin sealing, and then peeling the adhesive tape Has been proposed (see, for example, Patent Documents 1 and 2). However, when a lead frame is used, there are limitations on the thickness and material of the lead frame, causing problems such as an increase in the height of the semiconductor package and the inability to form fine wiring.

On the other hand, as another method for manufacturing a semiconductor package similar to the above, there is a method of forming a metal layer on a temporary support substrate, peeling the temporary support substrate after circuit formation, chip mounting, wire bonding, resin sealing. It has been devised. However, when this method is used, sufficient adhesion is maintained between the metal layer and the support substrate in order to prevent the processing liquid from flowing between the metal layer and the support substrate during circuit formation, and support from the wiring circuit is also possible. When peeling off the substrate, it is necessary to make it easy to peel off without any adhesive residue, but it is difficult to achieve both of them (see, for example, Patent Document 3).
Japanese Patent Laid-Open No. 10-12773 Japanese Patent No. 3543800 JP-A-11-121646

  In view of the above, the present invention can easily form a wiring circuit, and at the time of circuit formation, sufficiently maintains the adhesion between a metal layer to be a circuit and a layer to be removed later, and is resin-sealed. A composite metal layer with a film for a semiconductor capable of manufacturing a semiconductor device with high workability and productivity, which can be easily peeled off and removed from the sealing resin and wiring circuit later, An object is to provide a film for a semiconductor, a film with a wiring circuit using the film, a semiconductor device with a film for a semiconductor, a semiconductor device, and a method for manufacturing the semiconductor device.

  That is, the present invention is characterized by the following (1) to (17).

  (1) A composite metal layer comprising at least two layers of a first metal layer and a second metal layer having a thickness of 0.01 μm or more and 3 μm or less, and at least a resin layer A, the resin layer A and the A composite metal layer with a film for semiconductor, comprising: a film for semiconductor laminated so as to be in contact with the second metal layer.

  (2) The composite metal layer with a film for a semiconductor according to the above (1), wherein the thickness of the first metal layer is 1 μm or more and 100 μm or less.

  (3) The composite metal layer with a film for a semiconductor according to (1) or (2), wherein the material of the first metal layer or the second metal layer is copper or a copper alloy.

  (4) Any of the above (1) to (3), wherein the 90 degree peel strength at 25 ° C. of the first metal layer and the second metal layer is 0.1 N / m or more and 100 N / m or less. A composite metal layer with a film for a semiconductor according to 1.

  (5) The composite metal with a film for a semiconductor according to any one of (1) to (4), wherein the composite metal layer further has a release layer between the first metal layer and the second metal layer. layer.

  (6) The composite metal layer with a film for a semiconductor according to (5), wherein the material of the release layer is a metal or a metal oxide.

  (7) The film for semiconductor according to any one of (1) to (6) above, wherein the 90 ° peel strength at 25 ° C. between the second metal layer and the resin layer A is 5 N / m or more. Composite metal layer.

  (8) The composite metal layer with a film for a semiconductor according to any one of (1) to (7), wherein the resin layer A has a glass transition temperature of 100 to 300 ° C.

(9) The composite metal layer with a film for semiconductor according to any one of the above (1) to (8), wherein the temperature at which the weight of the resin layer A is reduced by 5% by weight is 300 ° C. or higher. (10) The resin layer The composite metal layer with a film for a semiconductor according to any one of the above (1) to (9), wherein the elastic modulus of A at 150 ° C. is 0.1 MPa or more.

  (11) The composite with a film for a semiconductor according to any one of (1) to (10), wherein the resin layer A contains a thermoplastic resin having an amide group, an ester group, an imide group, an ether group or a sulfone group. Metal layer.

  (12) A semiconductor film laminated on the composite metal layer with a semiconductor film according to any one of (1) to (11).

  (13) A film with a wiring circuit formed by etching a composite metal layer in the composite metal layer with a film for semiconductor according to any one of (1) to (11) above to form a wiring circuit.

  (14) The film with a wiring circuit according to (13), a semiconductor element bonded to a predetermined position of the wiring circuit formed on the film with the wiring circuit, a wire connecting the semiconductor element and the wiring circuit, and A semiconductor device with a film for a semiconductor, comprising: the wiring circuit, the semiconductor element, and a sealing material for sealing the wire.

  (15) The semiconductor device with a film for a semiconductor according to (14), wherein a 90-degree peel strength at at least one point in a temperature range of 0 to 250 ° C. between the sealing material and the resin layer A is 1000 N / m or less. .

  (16) A semiconductor device obtained by peeling off the second metal layer and the semiconductor film from the semiconductor device with a semiconductor film according to (14) or (15).

  (17) A step of etching a composite metal layer in the composite metal layer with a film for semiconductor according to any one of the above (1) to (11) to form a wiring circuit, and bonding a semiconductor element to a die pad of the wiring circuit A step of connecting the wiring circuit and the semiconductor element with a wire, a step of sealing the wiring circuit, the semiconductor element and the wire with a sealing material, and a wiring circuit comprising the first metal layer and the sealing A method for manufacturing a semiconductor device, comprising: peeling a second metal layer and a semiconductor film from a material.

  According to the present invention, it is possible to easily form a wiring circuit, and at the time of forming the circuit, the adhesion between the metal layer to be a circuit and a layer to be removed later is sufficiently maintained, and the circuit is resin-sealed. A composite metal layer with a film for a semiconductor capable of manufacturing a semiconductor device with high workability and productivity, which can be easily peeled off and removed from the sealing resin and wiring circuit later, It is possible to provide a film for a semiconductor, a film with a wiring circuit using the film, a semiconductor device with a film for a semiconductor, a semiconductor device, and a method for manufacturing the semiconductor device.

  In addition, the semiconductor device of the present invention is excellent in terms of density increase, area reduction, and thickness reduction, and is suitable for use in information equipment such as a mobile phone, for example.

  BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a composite metal layer with a semiconductor film, a semiconductor film, a film with a wiring circuit, a semiconductor device with a semiconductor film and a semiconductor device, and a semiconductor device manufacturing method according to the present invention will be described in detail below. .

  The composite metal layer with a semiconductor film of the present invention comprises a composite metal layer comprising at least two layers of a first metal layer and a second metal layer having a thickness of 0.01 μm or more and 3 μm or less, and at least a resin layer A And having a semiconductor film laminated so that the resin layer A and the second metal layer are in contact with each other. By using such a composite metal layer with a film for a semiconductor, a wiring circuit can be easily formed, and at the time of circuit formation, a metal layer to be a circuit, that is, a first metal layer and a layer to be removed later That is, after sufficiently sealing the circuit between the second metal layer and the layer made of the semiconductor film and sealing the circuit with the resin, the layer that becomes unnecessary from the wiring circuit and the sealing resin, that is, the second layer. The metal layer and the layer made of the semiconductor film can be easily peeled off and removed. Further, since the peeling and removal is performed at the interface between the first metal layer (circuit) and the second metal layer, the peeling and removal can be performed with no adhesive residue.

  In the composite metal layer with a film for semiconductor of the present invention, it is important that the thickness of the second metal layer is 0.01 μm or more and 3 μm or less. When the thickness of the second metal layer exceeds 3 μm, when the film for semiconductor is peeled from the wiring circuit, the second metal layer is buried in the sealing material and hardly peeled, and the first metal layer is the second metal layer. The metal layer is easily peeled off from the sealing material, and the semiconductor film is easily broken. For the same reason, the thickness of the second metal layer is more preferably 2 μm or less, and particularly preferably 1 μm or less. Further, when the thickness of the second metal layer is less than 0.01 μm, pinholes are likely to be generated in the second metal layer. For the same reason, the thickness of the second metal layer is more preferably 0.1 μm or more.

  The thickness of the first metal layer of the composite metal layer is not particularly limited, but is preferably 1 to 100 μm, more preferably 10 to 50 μm, and particularly preferably 25 to 50 μm. If the thickness of the first metal layer is more than 100 μm, it takes time to form a circuit, and the flexibility of the film with a wiring circuit is poor, and in the case of manufacturing by a reel-to-reel method, inconvenience is likely to occur in the transport process. . Furthermore, the thickness of the semiconductor package cannot be reduced. On the other hand, if the thickness of the first metal layer is less than 1 μm, pinholes are likely to occur in the first metal layer.

  Further, at 25 ° C. between the first metal layer and the second metal layer so that the semiconductor film and the second metal layer are easily peeled off from the wiring circuit made of the first metal layer. The 90-degree peel strength is preferably 100 N / m or less, more preferably 50 N / m or less, and particularly preferably 20 N / m or less. Further, in order to prevent the processing liquid from flowing between the first metal layer and the second metal layer during circuit formation, a 90 degree peel at 25 ° C. between the first metal layer and the second metal layer. The strength is preferably 0.1 N / m or more, more preferably 1 N / m or more, and particularly preferably 3 N / m or more. In the present invention, the 90-degree peel strength is measured in accordance with the JIS Z 0237 90-degree peeling method. Specifically, at 25 ° C., the speed is 270 to 330 mm / min, preferably 300 mm / min. Now, the 90-degree peel strength when the removal layer is peeled off is measured with a 90-degree peel tester (manufactured by Tester Sangyo).

  Moreover, the material of the first metal layer and the second metal layer is not particularly limited, but is preferably copper or a copper alloy so that a wiring circuit can be easily formed.

  The 90 degree peel strength at 25 ° C. between the second metal layer and the resin layer A (semiconductor film) is preferably 5 N / m or more. When the 90-degree peel strength between the second metal layer and the resin layer A is less than 5 N / m, the treatment liquid easily flows between the second metal layer and the resin layer A during circuit formation, and the wiring circuit In the attaching film transporting process, the semiconductor film is likely to be peeled off from the wiring circuit, and a sealing resin may easily enter between the wiring circuit and the resin layer A during the sealing process. For the same reason, the 90-degree peel strength is more preferably 10 N / m or more, and particularly preferably 50 N / m or more. The 90 degree peel strength is preferably 2000 N / m or less. The conditions for bonding the resin layer A and the second metal layer to measure the peel strength are not particularly limited, but may be performed under the bonding conditions in the semiconductor device manufacturing method of the present invention described later. preferable. For example, using a copper plate as the metal layer, (1) temperature 250 ° C., pressure 8 MPa, time 10 seconds, (2) temperature 350 ° C., pressure 3 MPa, time 3 seconds, or (3) temperature 200 ° C., pressure 6 MPa, time Bonding is performed under any bonding condition of 10 seconds.

  Moreover, in order to improve the adhesive force with the resin layer A, the surface of the 2nd metal layer may be processed. The surface treatment method is not particularly limited, and examples thereof include chemical treatment such as alkali treatment and silane coupling treatment, physical treatment such as roughening treatment, plasma treatment, and corona treatment.

  The composite metal layer may include at least three layers of a first metal layer, a second metal layer, and a release layer positioned between the first metal layer and the second metal layer. preferable. When the peeling layer is located between the first metal layer and the second metal layer, the first metal layer and the second metal layer are peeled off when peeling the semiconductor film and the second metal layer from the wiring circuit. It is easy to peel off without any adhesive residue between the second metal layers. The thickness of the release layer is preferably 1000 angstroms or less, and particularly preferably 100 angstroms or less so that it can be easily peeled between the first metal layer and the second metal layer. Further, the thickness of the release layer is preferably 0.1 angstroms or more, and particularly preferably 1 angstroms or more so as to be provided uniformly between the first metal layer and the second metal layer.

  The material of the release layer is not particularly limited, and for example, a metal, a metal oxide, an organic material, an inorganic material, or the like can be used. Although the kind of metal is not specifically limited, For example, Ni, Cu-Ni-Mo alloy etc. can be used. Moreover, oxides, such as Ni, Cr, and Mo, can also be used. In addition, organic substances such as thiadiazole, benzotriazole, mercaptobenzimidazole, mercaptobenzothiazole, polyallylamine, and the like can also be used. In view of heat resistance and ease of peeling, the material of the peeling layer is particularly preferably a metal or a metal oxide.

  As shown in FIG. 1, the semiconductor film may be composed of a single resin layer A5, or a resin layer A5 formed on a support film 4 as shown in FIG. However, from the viewpoint of workability and the like, those having a support film are preferable. Although it does not specifically limit as a film for semiconductors provided with a support film and the resin layer A, For example, the resin layer A5 is formed in the single side | surface or both surfaces of the support film 4, and the resin layer A5 on one side of the support film 4 Are formed, and another resin layer is formed on the opposite surface.

  The method for forming the resin layer A on the support film is not particularly limited. For example, the resin (a) used for forming the resin layer A may be N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, A resin varnish prepared by dissolving in a solvent such as cyclohexanone, methyl ethyl ketone, dimethylformamide or the like is applied to one or both sides of a support film, followed by heat treatment to remove the solvent. Moreover, you may laminate | stack the resin film containing the said resin (a) on a support film by heat-pressing. Preferably, a heat-resistant resin precursor varnish obtained by dissolving a precursor (for example, polyamic acid) of a resin (a) to be a heat-resistant resin (a) (for example, a polyimide resin) by a heat treatment or the like in a solvent, After coating on both sides, a semiconductor film is obtained by heat treatment. In this case, the solvent is removed by heat treatment after coating, and the precursor is made into a heat resistant resin (a) (for example, imidization).

  In the above, the processing temperature in the case of heat-treating the support film coated with the varnish for removal of the solvent, imidization or the like differs depending on whether it is a resin varnish or a heat resistant resin precursor varnish. In the case of a resin varnish, the temperature may be any temperature at which the solvent can be removed, and in the case of a precursor varnish, it is preferable to set a treatment temperature equal to or higher than the glass transition temperature of the resin layer A in order to imidize.

  In the above, the method for applying the varnish applied to the support film is not particularly limited, and examples thereof include roll coating, reverse roll coating, gravure coating, bar coating, and comma coating. Moreover, you may apply through a support film in a varnish.

  In order to improve heat resistance, the glass transition temperature of the resin layer A is preferably 100 to 300 ° C, more preferably 150 to 300 ° C, and particularly preferably 150 to 250 ° C. When the glass transition temperature is less than 100 ° C., peeling off from the wiring circuit and the sealing material tends to cause peeling at the interface between the resin layer A and the support film, or the resin layer A tends to cohesively break. In addition, the resin of the resin layer A tends to remain in the sealing material, and the resin layer A tends to soften due to heat in the wire bonding process, and wire bonding failure tends to occur. Furthermore, the resin layer A is softened by the heat in the sealing process, and there is a tendency that problems such as the sealing material entering between the wiring circuit and the resin layer A tend to occur. Further, when the glass transition temperature exceeds 300 ° C., the resin layer A is not sufficiently softened at the time of bonding, and the 90-degree peel strength at 25 ° C. with the second metal layer tends to be lowered. The glass transition temperature of the resin layer is determined by using a thermomechanical analyzer (for example, TMA-120 manufactured by Seiko Denshi Kogyo Co., Ltd.) to pull a single layer film of the resin layer A in a tensile mode with a heating rate of 10 ° C./min and a load of 10 g. Measured in

  The temperature at which the weight of the resin layer A is reduced by 5% by weight is preferably 300 ° C. or higher, more preferably 350 ° C. or higher, and further preferably 400 ° C. or higher. When this temperature is less than 300 ° C., outgas is generated due to heat at the time of adhering the semiconductor film to the second metal layer or heat in the wire bonding process, and the wiring circuit and the wire tend to be contaminated. The temperature at which the weight of the resin layer A decreases by 5% by weight can be determined by measuring with a differential thermal balance (for example, TG / DTA220, manufactured by Seiko Denshi Kogyo) at a heating rate of 10 ° C./min.

  Further, the elastic modulus at 150 ° C. of the resin layer A is preferably 0.1 MPa or more, and more preferably 0.5 MPa or more. When the elastic modulus at 150 ° C. is less than 0.1 MPa, the resin layer A is softened by the heat in the wire bonding step that is generally performed at about 150 to 250 ° C., and wire bonding failure tends to occur. The upper limit with a preferable elasticity modulus in 150 degreeC of the resin layer A is 2000 Mpa, More preferably, it is 1500 Mpa, More preferably, it is 1000 Mpa. The elastic modulus at 150 ° C. of the resin layer A can be measured, for example, using a dynamic viscoelasticity measuring device, DVE RHEOSPECTORER (manufactured by Rheology), in a tensile mode with a heating rate of 2 ° C./min and a measurement frequency of 10 Hz. it can.

Further, the linear thermal expansion coefficient at 20 to 200 ° C. of the resin layer A is preferably 3.0 × 10 ⁻⁵ / ° C. or less, more preferably 2.5 × 10 ⁻⁵ / ° C. or less, More preferably, it is 2.0 × 10 ⁻⁵ / ° C. or less. Further, in order to reduce the warp of the film with wiring circuit during the assembly process, the heat shrinkage rate when heated at 200 ° C. for 2 hours is preferably 0.15% or less, and is 0.1% or less. Is more preferable, and 0.05% or less is particularly preferable.

  Moreover, it is preferable that the surface of the resin layer A is treated in order to sufficiently improve the adhesion to the second metal layer or the support film. The surface treatment method is not particularly limited, and includes chemical treatment such as alkali treatment and silane coupling treatment, physical treatment such as sand mat treatment, plasma treatment, corona treatment and the like.

Further, the resin (a) used for forming the resin layer A is not particularly limited, but is preferably a resin that is not easily eroded by a solvent at the time of circuit formation and can withstand heat during a semiconductor device assembly process. For example, it has an amide group (—NHCO—), an ester group (—CO—O—), an imide group (—CO—N—CO—), an ether group (—O—) or a sulfone group (—SO ₂ —). A thermoplastic resin is preferred. In particular, a thermoplastic resin having an amide group, an ester group, an imide group or an ether group is preferable. Specifically, polyamide, polyimide, polyamideimide, aromatic polysulfone, polyphenylene sulfide, aromatic polyether ketone, polyarylate, aromatic polyether ether ketone and polyethylene naphthalate, aromatic polyamide, aromatic polyester, aromatic polyimide , Aromatic polyamideimide, aromatic polyether, aromatic polyethersulfone, aromatic polyetheramideimide, aromatic polyetheramide, aromatic polyesterimide and aromatic polyetherimide. Among these, polyimide, aromatic polyether amide imide, aromatic polyether imide and aromatic polyether amide are preferable from the viewpoints of heat resistance and adhesiveness.

  Aromatic polyether amide imide, aromatic polyether imide and aromatic polyether amide are all basic components such as aromatic diamine and bisphenol, and acid components dicarboxylic acid, tricarboxylic acid, tetracarboxylic acid or these An aromatic chloride or a reactive derivative thereof can be produced by polycondensation. That is, it can be carried out by a known method used for the reaction between an amine and an acid, and there are no particular restrictions on various conditions.

  Examples of the base component used for the synthesis of aromatic polyetherimide, aromatic polyetheramideimide or aromatic polyetheramide include 1,3-bis (3-aminophenoxy) benzene, 2,2-bis [4 -(4-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] sulfone, 4,4'-diaminodiphenyl ether, bis [4- (4-aminophenoxy) phenyl] ether, 2,2 An aromatic diamine having an ether group such as bis [4- (4-aminophenoxy)] hexafluoropropane; an aromatic diamine having no ether group such as 4,4′-methylenebis (2,6-diisopropylamine); Siloxane diamines such as 1,3-bis (3-aminopropyl) -tetramethyldisiloxane; and 1,12-diamino dodecane, 1,6-diaminohexane such as hexane alpha, .omega.-diamino alkane is preferably used. In the total amount of the base component, the aromatic diamine having the ether group is selected from 40 to 100 mol%, preferably 50 to 97 mol%, selected from aromatic diamine having no ether group, siloxane diamine, and α, ω-diaminoalkane. It is desirable to use at least one kind in an amount of 0 to 60 mol%, preferably 3 to 50 mol%. Specific examples of preferred base components include: (1) 60-89 mol% aromatic diamine having an ether group, preferably 68-82 mol%, 1-10 mol% siloxane diamine, preferably 3-7 mol%, and α, ω-diaminoalkane 10-30 mol%, preferably 15-25 mol% basic component, (2) 90-99 mol% aromatic diamine having ether group, preferably 93-97 mol%, and siloxane Base component consisting of 1 to 10 mol% of diamine, preferably 3 to 7 mol%, (3) Aromatic diamine having ether group 40 to 70 mol%, preferably 45 to 60 mol%, aromatic having no ether group A basic component composed of 30 to 60 mol% of diamine, preferably 40 to 55 mol%, is mentioned.

  Examples of the acid component used for the synthesis of aromatic polyetherimide, aromatic polyetheramideimide or aromatic polyetheramide include (A) trimellitic anhydride such as trimellitic anhydride and trimellitic anhydride chloride. Reactive derivatives, mononuclear aromatic tricarboxylic anhydrides such as pyromellitic dianhydride or mononuclear aromatic tetracarboxylic dianhydrides, (B) bisphenol A bistrimellitic dianhydride, oxydiphthalic anhydride, etc. Examples include polynuclear aromatic tetracarboxylic dianhydrides, (C) aromatic dicarboxylic acids such as reactive derivatives of phthalic acid such as terephthalic acid, isophthalic acid, terephthalic acid chloride, and isophthalic acid chloride.

  Above all, the aromatic component obtained by reacting 0.95 to 1.05 mol, preferably 0.98 to 1.02 mol of the acid component (A) per mol of the base component (1) or (2). An aromatic polyamid obtained by reacting 0.95 to 1.05 mol, preferably 0.98 to 1.02 mol of the acid component (B) per 1 mol of the ether amide imide and the base component (3). Ether imide is preferably used.

  In addition to the resin (a), the resin layer A may contain a filler such as ceramic powder, glass powder, silver powder, copper powder, resin particles, rubber particles, and a coupling agent. When adding a filler, the addition amount is preferably 1 to 30 parts by weight and more preferably 5 to 15 parts by weight with respect to 100 parts by weight of the resin (a). As the coupling agent, a coupling agent such as vinyl silane, epoxy silane, amino silane, mercapto silane, titanate, aluminum chelate, zirco aluminate and the like can be used, and a silane coupling agent is preferable. As silane coupling agents, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane Γ-glycidoxypropylmethyldiethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ -A silane coupling agent having an organic reactive group at the terminal, such as mercaptopropyltrimethoxysilane, and the like. Among these, an epoxy silane coupling agent having an epoxy group is preferably used. Here, the organic reactive group is a functional group such as an epoxy group, a vinyl group, an amino group, or a mercapto group. By adding a silane coupling agent to the resin layer A, the adhesion of the resin layer A to the support film is improved, and when peeled off at a temperature of 100 to 300 ° C., peeling occurs at the interface between the resin layer and the support film. It becomes difficult to occur. The addition amount of the coupling agent is preferably 1 to 15 parts by weight and more preferably 2 to 10 parts by weight with respect to 100 parts by weight of the resin (a).

  The support film that can be used for the semiconductor film is not particularly limited, but a resin varnish coating, drying, and a film made of a resin that can withstand heat during the semiconductor device assembly process are preferable. For example, a polyimide film, an aromatic film Polyimide film, polyamide film, aromatic polyamide film, polyamideimide film, aromatic polyamideimide film, aromatic polysulfone film, aromatic polyethersulfone film, polyphenylene sulfide film, aromatic polyetherketone film, polyarylate film, aromatic It is preferably selected from the group consisting of a polyether ether ketone film and a polyethylene naphthalate film. Also. In order to improve heat resistance, the glass transition temperature of the support film is preferably 200 ° C. or higher, and more preferably 250 ° C. or higher. By using such a heat-resistant resin film as a support film, the support film does not soften in heat-applying processes such as an adhesion process, a wire bonding process, a sealing process, and a peeling process, and work efficiently. Can do.

The support film preferably has sufficiently high adhesion to the resin layer A. If the adhesiveness is low, when peeled off from the wiring circuit and the sealing material at a temperature of 100 to 300 ° C., peeling easily occurs at the interface between the resin layer A and the support film, and the resin remains in the wiring circuit and the sealing material. It becomes easy. Therefore, the support film is particularly preferably a polyimide film having heat resistance and sufficiently high adhesion to the resin layer A. Although the kind of polyimide film is not particularly limited, in order to reduce the warpage of the composite metal layer after the resin layer A of the semiconductor film is attached to the second metal layer, the linear thermal expansion coefficient at 20 to 200 ° C. It is preferably 3.0 × 10 ⁻⁵ / ° C. or less, more preferably 2.5 × 10 ⁻⁵ / ° C. or less, and 2.0 × 10 ⁻⁵ / ° C. or less. More preferably it is. For the same reason, the heat shrinkage when heated at 200 ° C. for 2 hours is preferably 0.15% or less, more preferably 0.1% or less, 0.05 % Or less is particularly preferable.

  Moreover, in order to fully improve the adhesiveness with respect to the resin layer A, it is preferable that the surface of the said support film is processed. The surface treatment method is not particularly limited, and includes chemical treatment such as alkali treatment and silane coupling treatment, physical treatment such as sand mat treatment, plasma treatment, corona treatment and the like.

  Further, the thickness of the support film is not particularly limited, but is preferably 100 μm or less, and 50 μm or less in order to reduce warpage of the composite metal layer after the semiconductor film is attached to the composite metal layer. More preferably, it is more preferably 25 μm or less. The lower limit of the thickness of the support film is preferably 5 μm or more, and more preferably 10 μm or more.

  Further, the material of the support film can be selected from metals such as copper, aluminum, stainless steel and nickel other than the above-described resins. By using the support film as a metal, the linear expansion coefficient between the composite metal layer and the support film can be made closer, and the warpage of the film with a wiring circuit after the semiconductor film is attached to the composite metal layer can be reduced. .

  The thickness of the film for semiconductor composed of at least the resin layer A is not particularly limited. However, in order to reduce the warp of the film with a wiring circuit during the assembly process, and the greater the peeling angle during peeling, the easier the peeling. Therefore, it is preferably 200 μm or less, more preferably 100 μm or less, further preferably 50 μm or less, and particularly preferably 25 μm or less. On the other hand, the lower limit of the thickness of the film for a semiconductor is preferably 1 μm or more, and more preferably 5 μm or more. In addition, when the film for semiconductors consists only of the resin layer A, it is preferable that the thickness of the resin layer A shall be 1-20 micrometers, it is more preferable to be 3-15 micrometers, and it is further preferable to set it as 4-10 micrometers. preferable.

  Moreover, when the resin layer A is provided on one side or both sides of the support film, particularly when the resin layer A is provided on one side of the support film, the semiconductor film has a thickness (A) of the resin layer A and the support film. The ratio (A / B) to the thickness (B) is preferably 0.5 or less, more preferably 0.3 or less, and even more preferably 0.2 or less. When the ratio (A / B) of the thickness (A) of the resin layer A and the thickness (B) of the support film exceeds 0.5, the volume of the resin layer A is reduced when the solvent is removed after coating. Semiconductor films tend to curl, and workability and productivity when bonded to a composite metal layer tend to decrease. Further, when the resin layer A is provided on both sides of the support film, or when the resin layer A is provided on one side of the support film and another resin layer is provided on the other side, the thickness of the resin layer formed on both sides The ratio (resin layer A: other resin layer) is preferably 0.8: 1 to 1.2: 1, more preferably 0.9: 1 to 1.1: 1. It is particularly preferable that

  Further, in order to cancel out curling due to the volume reduction of the resin layer A when the solvent is removed from the semiconductor film, it is preferable to use a semiconductor film provided with the resin layer A on both sides of the support film. It is also preferable to provide a resin layer A on the opposite surface and provide a resin layer that is difficult to soften at high temperature on the opposite surface. In particular, it is preferable to form the resin layer A having adhesiveness on one side of the support film and forming the resin layer B having no adhesiveness with an elastic modulus at 230 ° C. of 10 MPa or more on the opposite side.

  The elastic modulus at 230 ° C. of the resin layer B having no adhesiveness is preferably 10 MPa or more, more preferably 100 MPa or more, and further preferably 1000 MPa or more. When the elastic modulus at 230 ° C. of the resin layer B is less than 10 MPa, the resin layer B tends to be softened in a process of applying heat such as a wire bonding process and tends to stick to a mold or a jig. The elastic modulus is preferably 2000 MPa or less, and more preferably 1500 MPa or less.

  The adhesive force of the resin layer B having no adhesiveness to the mold or jig is not particularly limited as long as it is low enough not to stick to the mold or jig in the process, but the resin layer B and the mold at 25 ° C. The 90-degree peel strength with the jig is preferably less than 5 N / m, more preferably 1 N / m or less. Here, the 90-degree peel strength is measured, for example, after pressure-bonding to a brass mold at a temperature of 250 ° C. and a pressure of 8 MPa for 10 seconds.

  The glass transition temperature of the resin layer B having an elastic modulus of 10 MPa or more at 230 ° C. is not easily softened in an adhesion process, a wire bonding process, a sealing process, a peeling process, and the like, and is difficult to stick to a mold or a jig. Therefore, it is preferably 150 ° C. or higher, more preferably 200 ° C. or higher, and further preferably 250 ° C. or higher. The glass transition temperature is preferably 350 or less, and more preferably 300 ° C. or less.

  There is no restriction | limiting in particular as resin (b) used for formation of the said resin layer B, Both a thermoplastic resin and a thermosetting resin can be used. Although there is no restriction | limiting in particular as a thermoplastic resin, It is preferable that it is a thermoplastic resin which has the same amide group, ester group, imide group, or ether group as the above-mentioned resin (a). In particular, aromatic polyether amide imide obtained by reacting 1 mol of the above-mentioned base component (3) and 0.95 to 1.05 mol, preferably 0.98 to 1.02 mol of the above-mentioned acid component (A). It is preferable that The thermosetting resin is not particularly limited, and for example, epoxy resin, phenol resin, bismaleimide resin (for example, bismaleimide resin having bis (4-maleimidophenyl) methane as a monomer) and the like are preferable. A combination of a thermoplastic resin and a thermosetting resin can also be used. When combining a thermoplastic resin and a thermosetting resin, it is preferable to set it as 5-100 weight part with respect to 100 weight part of thermoplastic resins, and it is more preferable to set it as 20-70 weight part. .

  Furthermore, the resin layer B preferably contains a filler and a coupling agent such as ceramic powder, glass powder, silver powder, copper powder, resin particles, and rubber particles in addition to the resin (b). . When adding a filler, it is preferable that the addition amount shall be 1-30 weight part with respect to 100 weight part of resin (b), and it is more preferable to set it as 5-15 weight part. The addition amount of the coupling agent is preferably 1 to 20 parts by weight and more preferably 5 to 15 parts by weight with respect to 100 parts by weight of the resin (b).

  There is no restriction | limiting in particular as a method of forming the resin layer B which does not have said adhesiveness on a support film, It may be the same as the method of forming the above-mentioned resin layer A on a support film. In addition, when using a thermosetting resin or a combination of a thermoplastic resin and a thermosetting resin as a resin for forming the resin layer B, the thermosetting resin is cured by heat treatment after varnish coating, The elastic modulus can be 10 MPa or more.

  Although the composite metal layer with a film for semiconductors of this invention is not specifically limited, For example, it can obtain by bonding the 2nd metal layer of a composite metal layer, and the resin layer A of a film for semiconductors. Moreover, after apply | coating the resin varnish or precursor varnish containing resin (a) mentioned above on the 2nd metal layer of a composite metal layer, it can also obtain by heat-processing and removing a solvent. Further, the composite metal layer may be obtained by forming the second metal layer and the first metal layer on the resin layer A of the semiconductor film by a known method such as vapor deposition, sputtering, or electrolytic plating. In this case, a conductor layer (seed layer) is previously formed on the resin layer A by a method such as chemical electroless plating, vacuum deposition, or sputtering, and then a composite metal layer is laminated by electrolytic plating. It is preferable. From the viewpoint of ease of production, a production method in which the second metal layer of the composite metal layer and the resin layer A of the semiconductor film are bonded together is preferable.

  As shown in FIG. 3, the film with wiring circuit of the present invention is one in which a wiring circuit is formed on the film for semiconductor (resin layer A) laminated on the composite metal layer with film for semiconductor of the present invention. The method for forming the wiring circuit on the film for semiconductor is not particularly limited. For example, after the photosensitive film is pasted on the first metal layer of the composite metal layer with a film for semiconductor of the present invention, the wiring circuit is formed. After the mask is overlaid and exposed, the photosensitive film is developed, and then the inner lead and die pad are removed by etching with a chemical that dissolves the composite metal layer (for example, ferric chloride for copper). A wiring circuit that can be formed can be formed. Further, a circuit may be formed directly on the semiconductor film by vapor deposition, sputtering, or the like, or a metal may be formed on the entire surface by vapor deposition, sputtering, or the like, and then a circuit may be formed by a method such as etching. Alternatively, a circuit formed in advance may be transferred and pasted onto the semiconductor film to form a circuit. Further, after the wiring circuit is formed, the circuit may be plated with gold, silver, palladium, or the like.

  As shown in FIG. 4, the semiconductor device with a film for a semiconductor of the present invention is a film with a wiring circuit according to the present invention, a semiconductor element bonded to a wiring circuit surface formed on the semiconductor film of the film with a wiring circuit, It comprises a wire for connecting a semiconductor element and a wiring circuit, a wiring circuit formed on a semiconductor film, and a sealing material for sealing the semiconductor element and the wire. . The 90 degree peel strength at least at one point in the temperature range of 0 to 250 ° C. between the resin layer A and the sealing material is preferably 1000 N / m or less, more preferably 800 N / m or less, and 500 N / m It is particularly preferable that it is m or less. When the 90-degree peel strength exceeds 1000 N / m, stress is applied to the wiring circuit and the sealing material, which may cause damage. Note that, as the measurement temperature increases, the 90-degree peel strength usually decreases. The 90-degree peel strength is preferably 0 N / m or more, preferably 3 N / m or more, and more preferably 5 N / m or more.

  The 90-degree peel strength between the resin layer A and the sealing material at at least one point in the temperature range of 0 to 250 ° C. after sealing with the sealing material is 0 according to the 90-degree peeling method of JIS Z 0237. In an oven at ˜250 ° C., the semiconductor film is peeled off in the direction of 90 degrees and measured. Specifically, at least at one point in the temperature range of 0 to 250 ° C., the 90 degree peel strength when peeling off the semiconductor film at a speed of 270 to 330 mm per minute, preferably 300 mm per minute, is obtained from Tensilon RTM-100 ( (Measured by Orientec) Further, the sealing condition by the sealing material for measuring the 90-degree peel strength is not particularly limited, but it is preferable to seal the sealing condition in the semiconductor device manufacturing method of the present invention described later. For example, CEL-9200 (trade name, biphenyl sealing material manufactured by Hitachi Chemical Co., Ltd.) is used as the sealing material, and sealing is performed under conditions of a temperature of 180 ° C., a pressure of 10 MPa, and a time of 3 minutes, and then at 180 ° C. for 5 It is preferable to cure the encapsulant by heating for a period of time.

  There is no restriction | limiting in particular as an adhesive agent used in order to adhere | attach the said semiconductor element to the die pad of a wiring circuit surface, For example, paste adhesives, such as a silver paste, well-known adhesive tapes, etc. can be used. After bonding the semiconductor element to the die pad, the adhesive is usually cured by heating at 140 to 200 ° C. for 30 minutes to 2 hours.

  The material of the wire used for the wire bonding is not particularly limited, and examples thereof include a gold wire. In the wire bonding step, for example, the wire is bonded to the semiconductor element and the inner lead by heating at 150 to 270 ° C. for 3 to 30 minutes.

  The material of the sealing material is not particularly limited, and a known sealing material such as an epoxy resin such as a cresol novolac epoxy resin, a phenol novolac epoxy resin, a biphenyl diepoxy, or a naphthol novolac epoxy resin can be used. In addition, an additive such as a flame retardant such as a filler or a bromo compound may be added to the sealing material. The sealing condition by the sealing material is not particularly limited, but is usually performed by heating at 150 to 200 ° C. and a pressure of 10 to 15 MPa for 2 to 5 minutes. Further, the sealing may be either individual piece sealing for each semiconductor element or collective sealing for simultaneously sealing a large number of semiconductor elements.

  Moreover, the adhesive strength of the resin layer A and the 2nd metal layer can also be improved by heat-processing the composite metal layer with a film for semiconductors of this invention, or a film with a wiring circuit before performing a sealing process. . The heating temperature is not particularly limited, but it is preferable to heat at 100 ° C. or higher in order to improve the adhesive strength between the resin layer A and the second metal layer. Moreover, it is preferable to heat at 300 degrees C or less from the heat resistant point of a wiring circuit or a film for semiconductors. For the same reason, it is more preferable to heat to 130 ° C. or higher and 270 ° C. or lower. Moreover, although heating time is not specifically limited, In order to fully improve the adhesive strength of the resin layer A and a 2nd metal layer, 10 second or more is preferable. For the same reason, the heating time is more preferably from 1 minute to 2 hours.

  It is preferable to perform said heating process by the heating in various processes (For example, hardening process of adhesives, such as a silver paste, a wire bond process, etc.) before moving to a sealing process from the point of productivity. For example, in the bonding process of semiconductor elements, heating is usually performed at 140 to 200 ° C. for 30 minutes to 2 hours in order to cure the adhesive used for bonding. In the wire bonding step, heating is usually performed at about 150 ° C. to 270 ° C. for about 3 minutes to 30 minutes. Therefore, the heating step can be performed by heating in these steps.

  The semiconductor device of the present invention is obtained by peeling the second metal layer and the semiconductor film from the semiconductor device with a film for semiconductor of the present invention. The structure of the semiconductor device of the present invention is not particularly limited. For example, a package having a structure in which only one side (semiconductor element side) of the package is sealed and the exposed lead on the back side is used for external connection (Non Lead Type Package) Is mentioned. Specific examples of the package include QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-Leaded Package), LGA (Land Grid Array), and the like.

  Moreover, when the second metal layer and the semiconductor film are peeled off, it is preferable that the resin layer A does not remain in the wiring circuit and the sealing material made of the first metal layer. When the residual amount is large, not only the appearance is inferior, but also a contact failure is liable to occur when the wiring circuit is used for external connection. Therefore, when the resin layer A remains in the wiring circuit and the sealing material, it is preferably removed by mechanical brushing, a solvent, or the like. The solvent used at this time is not particularly limited, but N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, dimethylformamide and the like are preferable.

  The temperature at which the metal layer excluding the wiring circuit composed of the first metal layer and the semiconductor film are peeled off and peeled is not particularly limited, but is preferably between 0 and 250 ° C. When this temperature is less than 0 ° C., the resin tends to remain in the wiring circuit and the sealing material, and when this temperature exceeds 250 ° C., the wiring circuit and the sealing material tend to deteriorate. Moreover, although this peeling process may be performed before and after the process of hardening the above-mentioned sealing material, it is preferable before the process of hardening.

  More specifically, the semiconductor device of the present invention can be obtained by a manufacturing method having the following steps. That is, (1) the second metal layer of the composite metal layer composed of at least two layers of the first metal layer and the second metal layer having a thickness of 0.01 μm or more and 3 μm or less is composed of at least the resin layer A. Steps for laminating semiconductor films (composite metal layer with semiconductor film of the present invention), (2) Steps for etching a composite metal layer laminated on a film for semiconductor to form a wiring circuit (with wiring circuit of the present invention) Film), (3) a step of adhering a semiconductor element to the die pad of the wiring circuit using an adhesive, (4) a step of electrically connecting the inner lead of the wiring circuit and the semiconductor element with a wire, and (5) a wiring circuit. A step of sealing a semiconductor element and a wire with a sealing material (semiconductor film-equipped semiconductor device of the present invention), (6) a wiring circuit comprising the first metal layer and a sealing material, a second metal layer and Half It is preferable to manufacture by the process of peeling the film for conductors.

  Further, in the semiconductor device of the present invention, when the wiring circuit is composed of a plurality of patterns each having a die pad and an inner lead, the sealed wiring circuit is divided as necessary to provide one semiconductor element each. Can be obtained. This dividing step may be performed either after the sealing step or after the step of peeling the semiconductor film or the like.

  The composite metal layer that can be used in the method for manufacturing a semiconductor device of the present invention, the bonding conditions when the semiconductor film is bonded to the composite metal layer, the circuit formation method, and the like are the same as described above. . Moreover, in the manufacturing method of the semiconductor device of this invention, when the composite metal layer with a film for semiconductors of this invention or the film with a wiring circuit is available, you may start from the stage.

  EXAMPLES Next, the present invention will be specifically described by way of examples, but these examples do not limit the present invention.

<Manufacture of resin varnish for forming resin layer A or B>
(Production Example 1)
270.9 g (0) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane in a 5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen inlet tube and a fractionation tower under a nitrogen atmosphere .66 mol) and 8.7 g (0.035 mol) of 1,3-bis (3-aminopropyl) -tetramethyldisiloxane were added and dissolved in 1950 g of N-methyl-2-pyrrolidone. Further, this solution was cooled to 0 ° C., and 149.5 g (0.71 mol) of trimellitic anhydride chloride was added. When the trimellitic anhydride chloride was dissolved, 100 g of triethylamine was added. After stirring at room temperature (25 ° C.) for 2 hours, the temperature was raised to 180 ° C. and reacted for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After drying this, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to again isolate the polymer. Then, the polyetheramide imide powder refine | purified by drying under reduced pressure was obtained. 120 g of the obtained polyetheramideimide powder and 36 g of a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: SH6040) were dissolved in 360 g of N-methyl-2-pyrrolidone, and an aromatic polyetheramideimide resin varnish was obtained. Obtained.

(Production Example 2)
Under a nitrogen atmosphere, 263.1 g (0.90 mol) of 1,3-bis (3-aminophenoxy) benzene was added to a 5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen inlet tube and a fractionation tower Was dissolved in 1550 g of N-methyl-2-pyrrolidone. Further, this solution was cooled to 0 ° C., and 189.5 g (0.90 mol) of trimellitic anhydride chloride was added. When the trimellitic anhydride chloride was dissolved, 100 g of triethylamine was added. After stirring at room temperature (25 ° C.) for 2 hours, the temperature was raised to 180 ° C. and reacted for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After drying this, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to again isolate the polymer. Then, the polyetheramide imide powder refine | purified by drying under reduced pressure was obtained. 120 g of the obtained polyetheramideimide powder and 3.6 g of a silane coupling agent (trade name: SH6040, manufactured by Shin-Etsu Chemical Co., Ltd.) are dissolved in 360 g of N-methyl-2-pyrrolidone, and an aromatic polyetheramideimide resin is obtained. A varnish was obtained.

(Production Example 3)
In a 5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen inlet tube and a fractionation tower, 172.4 g (0) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane in a nitrogen atmosphere .42 mol) and 153.7 g (0.42 mol) of 4,4′-methylenebis (2,6-diisopropylaniline) were added and dissolved in 1550 g of N-methyl-2-pyrrolidone. Further, this solution was cooled to 0 ° C., and 174.7 g (0.83 mol) of trimellitic anhydride chloride was added. When the trimellitic anhydride chloride was dissolved, 130 g of triethylamine was added. After stirring at room temperature (25 ° C.) for 2 hours, the temperature was raised to 180 ° C. and reacted for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After drying this, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to again isolate the polymer. Then, the polyetheramide imide powder refine | purified by drying under reduced pressure was obtained. In 120 g of the obtained polyetheramideimide powder, 6 g of a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: SH6040) is dissolved in 360 g of N-methyl-2-pyrrolidone, and an aromatic polyetheramideimide resin varnish is obtained. Obtained.

(Production Example 4)
Under a nitrogen atmosphere, 102.5 g (0) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane was added to a 5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen introducing tube and a fractionation tower. .25 mol) and 91.5 g (0.25 mol) of 4,4'-methylenebis (2,6-diisopropylaniline) were added and dissolved in 1900 g of N-methyl-2-pyrrolidone. The solution was further cooled to 0 ° C., and 282.2 g (0.49 mol) of bisphenol A bistrimellitate dianhydride was added. Thereafter, stirring was continued at room temperature (25 ° C.) for 20 minutes and at 60 ° C. for 2 hours, and then the temperature was raised to 180 ° C. and reacted for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After drying this, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to again isolate the polymer. Then, the polyetherimide powder refine | purified by drying under reduced pressure was obtained. 120 g of the obtained polyetherimide powder was dissolved in 360 g of N-methyl-2-pyrrolidone to obtain an aromatic polyetherimide resin varnish.

<Production and Evaluation of Semiconductor Film, Composite Metal Layer with Semiconductor Film, Film with Wiring Circuit, Semiconductor Device with Semiconductor Film, and Semiconductor Device>
Example 1
A polyimide film (Upilex SGA manufactured by Ube Industries, Ltd., thickness 50 μm) whose surface was chemically treated was used as a support film. On one side of this polyimide film, the aromatic polyetheramide imide resin varnish produced in Production Example 1 was cast to a thickness of 90 μm, dried at 100 ° C. for 10 minutes, and at 300 ° C. for 10 minutes, A film for semiconductor with a resin layer A having a thickness of 25 μm was obtained. The resin layer A had a glass transition temperature of 220 ° C., a 5 wt% reduction temperature of 410 ° C., and an elastic modulus at 150 ° C. of 1800 MPa. The ratio (A / B) of the thickness (A) of the resin layer A and the thickness (B) of the support film was 0.5.

  Next, the film for semiconductor obtained above is composed of a composite metal layer made by Nihon Electrode (first metal layer made of copper: 18 μm, second metal layer made of copper: 1 μm, and release layer). 2 is bonded under the conditions of a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds so that the second metal layer of the composite metal layer and the resin layer A of the semiconductor film are in contact with each other. A composite metal layer with a film for semiconductor was obtained. In addition, when the 90 degree peel strength (peeling speed: 300 mm per minute, the same applies hereinafter) between the resin layer A and the second metal layer at 25 ° C. was measured, there was no problem of peeling at the time of conveyance at 50 N / m. . Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good.

  Next, after pasting a photosensitive film on the first metal layer of the composite metal layer with a film for semiconductor obtained above, the mask of the wiring circuit is overlaid and exposed, the photosensitive film is developed, and the second chloride. By etching the composite metal layer using an iron solution, a film with a wiring circuit having the structure of FIG. 3 having an inner lead and a die pad was obtained.

  Next, a semiconductor device with a semiconductor film having the structure shown in FIG. 4 was manufactured by bonding a semiconductor element to the die pad portion of the wiring circuit obtained above, and performing a wire bonding step and a sealing step. There was no problem. A silver paste was used for bonding the semiconductor elements, and the silver paste was cured by heating at 150 ° C. for 60 minutes. The wire bonding step was performed by using a gold wire as the wire and heating at 260 ° C. for 5 minutes. Moreover, the sealing process was performed at a temperature of 180 ° C., a pressure of 10 MPa, and a time of 3 minutes using a biphenyl sealing material (trade name: CEL9220, manufactured by Hitachi Chemical Co., Ltd.) as a sealing material.

  Next, the second metal layer, the release layer, and the semiconductor film (support film) at room temperature (25 ° C.) from the wiring circuit and the sealing material made of the first metal layer of the semiconductor device with a semiconductor film obtained above. And the resin layer A) were peeled off to obtain the semiconductor device (semiconductor package) of FIG. At the time of peeling, the 90 degree peel strength can be easily peeled off at 15 N / m (peeling speed: 300 mm per minute, the same applies hereinafter), and the wiring circuit made of the first metal layer and the sealing between the wiring circuits There was almost no residue in the wood.

  Next, after heating the semiconductor device obtained above at 180 ° C. for 5 hours to cure the sealing material, the semiconductor device was divided by dicing to manufacture semiconductor devices each having one semiconductor element (FIG. 6). No problems occurred during the process.

(Example 2)
As the support film, a polyimide film (Ube Industries, Upilex SGA, thickness 25 μm) whose surface was chemically treated was used. On one side of this polyimide film, the aromatic polyetheramide imide adhesive varnish produced in Production Example 1 is cast to a thickness of 50 μm, dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes, and has a thickness of 10 μm. The resin layer A was formed. The resin layer A had a glass transition temperature of 220 ° C., a 5 wt% reduction temperature of 410 ° C., and an elastic modulus at 150 ° C. of 1800 MPa. Further, the aromatic polyether amide imide resin varnish produced in Production Example 3 was cast on the opposite surface of the polyimide film to a thickness of 50 μm, dried at 100 ° C. for 10 minutes, and 300 ° C. for 10 minutes to obtain a thickness. A 10 μm resin layer B was formed. The resin layer B had a glass transition temperature of 260 ° C., a 5% weight loss temperature of 421 ° C., and an elastic modulus at 230 ° C. of 1700 MPa. This obtained the film for semiconductors in which the resin layer A and the resin layer B were formed in the support film on each side.

  Next, the film for semiconductor obtained above is composed of a composite metal layer made by Nihon Electrode (first metal layer made of copper: 18 μm, second metal layer made of copper: 1 μm, and release layer). The product name YSNAP) is bonded so that the second metal layer of the composite metal layer and the resin layer A of the semiconductor film are in contact with each other at a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds. A metal layer was obtained. In addition, when the 90 degree | times peel strength of the resin layer A and the 2nd metal layer in 25 degreeC was measured, the malfunction which peeled at the time of conveyance did not arise at 40 N / m. Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good.

  Furthermore, using the composite metal layer with a semiconductor film obtained above, a film with a wiring circuit, a semiconductor device with a semiconductor film, and a semiconductor device were produced in the same manner as in Example 1, but no problems occurred in each step. . Note that the second metal layer, the release layer, and the semiconductor film (support film, resin layer A) are formed at room temperature (25 ° C.) from the wiring circuit and the sealing material including the first metal layer of the semiconductor device with the semiconductor film. The 90 degree peel strength when the resin layer B) is peeled off can be easily peeled off at 15 N / m, and there is almost no residue in the wiring circuit composed of the first metal layer and the sealing material between the wiring circuits. There wasn't.

(Example 3)
A film for a semiconductor, a composite metal layer with a film for a semiconductor, a wiring circuit, as in Example 1, except that a polyethylene naphthalate film (manufactured by Teijin Ltd., trade name: TEONEX, thickness 50 μm) was used as the support film. The attached film, the semiconductor device with the semiconductor film, and the semiconductor device were manufactured, but no problem occurred in each step. In addition, when the 90 degree | times peel strength of the resin layer A and the 2nd metal layer in 25 degreeC was measured, the malfunction which peeled at the time of conveyance did not arise at 40 N / m. Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good. Furthermore, the second metal layer, the release layer, and the semiconductor film (support film and resin layer A) are formed at room temperature (25 ° C.) from the wiring circuit and the sealing material made of the first metal layer of the semiconductor device with a semiconductor film. The 90 degree peel strength when peeling off) was easily peeled off at 15 N / m, and there was almost no residue in the wiring circuit comprising the first metal layer and the sealing material between the wiring circuits.

Example 4
Except for using the aromatic polyetheramide imide resin varnish produced in Production Example 2 for the formation of Resin Layer A, a film for semiconductor, a composite metal layer with a film for semiconductor, a film with a wiring circuit, Although a semiconductor device with a semiconductor film and a semiconductor device were manufactured, no problem occurred in each process. The resin layer A had a glass transition temperature of 190 ° C., a 5% weight loss temperature of 415 ° C., and an elastic modulus at 150 ° C. of 1500 MPa. Moreover, when the 90 degree | times peel strength of the resin layer A and the 2nd metal layer in 25 degreeC was measured, the malfunction which peeled at the time of conveyance did not arise at 200 N / m. Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good. Furthermore, the second metal layer, the release layer, and the semiconductor film (support film and resin layer A) are formed at room temperature (25 ° C.) from the wiring circuit and the sealing material made of the first metal layer of the semiconductor device with a semiconductor film. The 90 degree peel strength when peeling off) was easily peeled off at 15 N / m, and there was almost no residue in the wiring circuit comprising the first metal layer and the sealing material between the wiring circuits.

(Example 5)
As a support film, a polyimide film having a surface subjected to a sand mat treatment (trade name: Kapton EN, thickness 25 μm, manufactured by Toray DuPont Co., Ltd., has a linear thermal expansion coefficient at 20 to 200 ° C. of 1.5 × 10 ⁻⁶ / Film for semiconductor and film for semiconductor in the same manner as in Example 1 except that the heat shrinkage ratio when heated at 200 ° C. for 2 hours is 0.02%) and the thickness of the resin layer A is 4 μm. The attached composite metal layer, the film with the wiring circuit, the semiconductor device with the semiconductor film, and the semiconductor device were produced, but no problem occurred in each step. In addition, when the 90 degree | times peel strength of the resin layer A and the 2nd metal layer in 25 degreeC was measured, the malfunction which peeled at the time of conveyance at 30 N / m did not arise. Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good. Furthermore, the second metal layer, the release layer, and the semiconductor film (support film and resin layer A) are formed at room temperature (25 ° C.) from the wiring circuit and the sealing material made of the first metal layer of the semiconductor device with a semiconductor film. The 90 degree peel strength when peeling off) was easily peeled off at 15 N / m, and there was almost no residue in the wiring circuit comprising the first metal layer and the sealing material between the wiring circuits.

(Example 6)
Except that the aromatic polyetherimide resin varnish produced in Production Example 4 was used to form the resin layer A, a film for semiconductor, a composite metal layer with a film for semiconductor, a film with a wiring circuit, and a semiconductor were used in the same manner as in Example 1. A semiconductor device with a film and a semiconductor device were manufactured, but no problem occurred in each step. The resin layer A had a glass transition temperature of 240 ° C., a 5% weight loss temperature of 410 ° C., and an elastic modulus at 150 ° C. of 2000 MPa. Moreover, when the 90 degree | times peel strength of the resin layer A and the 2nd metal layer in 25 degreeC was measured, the malfunction which peeled at the time of conveyance at 30 N / m did not arise. Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good. Furthermore, the second metal layer, the release layer, and the semiconductor film (support film and resin layer A) are formed at room temperature (25 ° C.) from the wiring circuit and the sealing material made of the first metal layer of the semiconductor device with a semiconductor film. The 90 degree peel strength when peeling off) was easily peeled off at 15 N / m, and there was almost no residue in the wiring circuit comprising the first metal layer and the sealing material between the wiring circuits.

(Comparative Example 1)
A polyimide film (Upilex SGA manufactured by Ube Industries, Ltd., thickness 50 μm) whose surface was chemically treated was used as a support film. On one side of this polyimide film, the aromatic polyetheramide imide resin varnish produced in Production Example 1 was cast to a thickness of 90 μm, dried at 100 ° C. for 10 minutes, and at 300 ° C. for 10 minutes, A film for semiconductor with a resin layer A having a thickness of 25 μm was obtained. The resin layer A had a glass transition temperature of 220 ° C., a 5 wt% reduction temperature of 410 ° C., and an elastic modulus at 150 ° C. of 1800 MPa. The ratio (A / B) of the thickness (A) of the resin layer A and the thickness (B) of the support film was 0.5.

  Next, a single layer copper foil (thickness: 18 μm) made by Nippon Electrode was adhered to the resin layer A of the semiconductor film obtained above under the conditions of a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds. A single layer copper foil was obtained. In addition, when the 90 degree | times peel strength of the resin layer A and single layer copper foil in 25 degreeC was measured, the malfunction which peeled off at the time of conveyance was 300 N / m. Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good.

  Next, after pasting a photosensitive film on the single-layer copper foil with a film for semiconductor obtained above, the wiring circuit mask is overlaid and exposed, the photosensitive film is developed, and a ferric chloride solution is used. A film with a wiring circuit having an inner lead and a die pad was obtained by etching the single layer copper foil.

  Next, a semiconductor device with a semiconductor film was manufactured by adhering a semiconductor element to the die pad portion of the wiring circuit obtained above and performing a wire bonding step and a sealing step. However, no problem occurred in any step. A silver paste was used for bonding the semiconductor elements, and the silver paste was cured by heating at 150 ° C. for 60 minutes. The wire bonding step was performed by using a gold wire as the wire and heating at 260 ° C. for 5 minutes. Moreover, the sealing process was performed at a temperature of 180 ° C., a pressure of 10 MPa, and a time of 3 minutes using a biphenyl sealing material (trade name: CEL9220, manufactured by Hitachi Chemical Co., Ltd.) as a sealing material.

  Next, the semiconductor film (support film and resin layer A) was attempted to be peeled off at room temperature (25 ° C.) from the wiring circuit and the sealing material made of the single layer copper foil of the semiconductor device with a semiconductor film obtained above. However, the adhesive force between the wiring circuit made of a single layer copper foil and the resin layer A was high and could not be peeled off.

(Comparative Example 2)
A polyimide film (Upilex SGA manufactured by Ube Industries, Ltd., thickness 50 μm) whose surface was chemically treated was used as a support film. On one side of this polyimide film, the aromatic polyetheramide imide resin varnish produced in Production Example 1 was cast to a thickness of 90 μm, dried at 100 ° C. for 10 minutes, and at 300 ° C. for 10 minutes, A film for semiconductor with a resin layer A having a thickness of 25 μm was obtained. The resin layer A had a glass transition temperature of 220 ° C., a 5 wt% reduction temperature of 410 ° C., and an elastic modulus at 150 ° C. of 1800 MPa. The ratio (A / B) of the thickness (A) of the resin layer A and the thickness (B) of the support film was 0.5.

  Next, to the resin layer A of the film for semiconductor obtained above, a composite metal layer made by Nihon Electrode (first metal layer made of copper: 35 μm, second metal layer made of copper: 7 μm, and release layer) 2 layers of product name YSNAP) was bonded under the conditions of a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds to obtain a composite metal layer with a semiconductor film having the structure of FIG. In addition, when the 90 degree | times peel strength of the resin layer A and the 2nd metal layer in 25 degreeC was measured, the malfunction which peeled at the time of conveyance did not arise at 50 N / m. Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good.

  Next, after pasting a photosensitive film on the first metal layer of the composite metal layer with a film for semiconductor obtained above, the mask of the wiring circuit is overlaid and exposed, the photosensitive film is developed, and the second chloride. By etching the composite metal layer using an iron solution, a film with a wiring circuit having the structure of FIG. 3 having an inner lead and a die pad was obtained.

  Next, a semiconductor device with a semiconductor film having the structure shown in FIG. 4 was manufactured by bonding a semiconductor element to the die pad portion of the wiring circuit obtained above, and performing a wire bonding step and a sealing step. There was no problem. A silver paste was used for bonding the semiconductor elements, and the silver paste was cured by heating at 150 ° C. for 60 minutes. The wire bonding step was performed by using a gold wire as the wire and heating at 260 ° C. for 5 minutes. Moreover, the sealing process was performed at a temperature of 180 ° C., a pressure of 10 MPa, and a time of 3 minutes using a biphenyl sealing material (trade name: CEL9220, manufactured by Hitachi Chemical Co., Ltd.) as a sealing material.

  From the wiring circuit and sealing material comprising the first metal layer of the semiconductor device with a semiconductor film obtained above, the second metal layer, the release layer and the semiconductor film (support film and resin) at room temperature (25 ° C.) Layer A) was peeled off to obtain the semiconductor device (semiconductor package) of FIG. At this time, the second metal layer was difficult to peel off, and the resin layer A of the semiconductor film was torn off, or the wiring circuit made of the first metal layer was peeled off from the sealing material.

(Comparative Example 3)
A polyimide film (Upilex SGA manufactured by Ube Industries, Ltd., thickness 50 μm) whose surface was chemically treated was used as a support film. On one side of this polyimide film, the aromatic polyetheramide imide resin varnish produced in Production Example 1 was cast to a thickness of 90 μm, dried at 100 ° C. for 10 minutes, and at 300 ° C. for 10 minutes, A film for semiconductor with a resin layer A having a thickness of 25 μm was obtained. The resin layer A had a glass transition temperature of 220 ° C., a 5 wt% reduction temperature of 410 ° C., and an elastic modulus at 150 ° C. of 1800 MPa. The ratio (A / B) of the thickness (A) of the resin layer A and the thickness (B) of the support film was 0.5.

  Next, to the resin layer A of the film for semiconductor obtained above, a composite metal layer made by Nippon Electrolytic Co., Ltd. (first metal layer made of copper: 35 μm, second metal layer made of copper: 5 μm, and release layer) 2 layers of product name YSNAP) was bonded under the conditions of a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds to obtain a composite metal layer with a semiconductor film having the structure of FIG. In addition, when the 90 degree | times peel strength of the resin layer A and the 2nd metal layer in 25 degreeC was measured, the malfunction which peeled at the time of conveyance did not arise at 50 N / m. Further, the curling of the semiconductor film was small, and the workability at the time of bonding was good.

  Next, after pasting a photosensitive film on the first metal layer of the composite metal layer with a film for semiconductor obtained above, the mask of the wiring circuit is overlaid and exposed, the photosensitive film is developed, and the second chloride. By etching the composite metal layer using an iron solution, a film with a wiring circuit having the structure of FIG. 3 having an inner lead and a die pad was obtained.

  Next, a semiconductor device with a semiconductor film having the structure shown in FIG. 4 was manufactured by bonding a semiconductor element to the die pad portion of the wiring circuit obtained above, and performing a wire bonding step and a sealing step. There was no problem. A silver paste was used for bonding the semiconductor elements, and the silver paste was cured by heating at 150 ° C. for 60 minutes. The wire bonding step was performed by using a gold wire as the wire and heating at 260 ° C. for 5 minutes. Moreover, the sealing process was performed at a temperature of 180 ° C., a pressure of 10 MPa, and a time of 3 minutes using a biphenyl sealing material (trade name: CEL9220, manufactured by Hitachi Chemical Co., Ltd.) as a sealing material.

  From the wiring circuit and sealing material comprising the first metal layer of the semiconductor device with a semiconductor film obtained above, the second metal layer, the release layer and the semiconductor film (support film and resin) at room temperature (25 ° C.) Layer A) was peeled off to obtain the semiconductor device (semiconductor package) of FIG. At this time, the second metal layer was difficult to peel off, and the resin layer A of the semiconductor film was torn off, or the wiring circuit made of the first metal layer was peeled off from the sealing material.

  As described above, from the results of Examples 1 to 6 and Comparative Examples 1 to 3, a composite metal layer composed of at least two layers of a first metal layer and a second metal layer having a thickness of 0.01 μm or more and 3 μm or less, And a semiconductor film with a semiconductor film comprising at least the resin layer A and laminated so that the resin layer A and the second metal layer are in contact with each other. It can be seen that it can be manufactured with productivity and productivity.

It is sectional drawing of the one aspect | mode of the composite metal layer with a film for semiconductors of this invention. It is sectional drawing of the one aspect | mode of the composite metal layer with a film for semiconductors of this invention. It is sectional drawing of the one aspect | mode of the film with a wiring circuit of this invention. It is sectional drawing of the one aspect | mode of the semiconductor device with a film for semiconductors of this invention. It is sectional drawing which shows the semiconductor device of this invention obtained by peeling the 2nd metal layer 2, the peeling layer 3, and the films for semiconductors 4 and 5 in FIG. It is sectional drawing which shows the semiconductor device of this invention obtained by dividing | segmenting the semiconductor device shown in FIG.

Explanation of symbols

1: First metal layer (wiring circuit)
2: Second metal layer 3: Release layer 4: Support film 5: Resin layer A
6: Wire 7: Sealing material 8: Semiconductor element

Claims (17)

A composite metal layer comprising at least two layers of a first metal layer and a second metal layer having a thickness of 0.01 μm or more and 3 μm or less, and at least a resin layer A, the resin layer A and the second metal layer A film for semiconductors laminated so that the metal layer is in contact,
A composite metal layer with a film for semiconductor.   2. The composite metal layer with a film for a semiconductor according to claim 1, wherein the thickness of the first metal layer is 1 μm or more and 100 μm or less.   The composite metal layer with a film for a semiconductor according to claim 1 or 2, wherein a material of the first metal layer or the second metal layer is copper or a copper alloy.   The film for semiconductor according to any one of claims 1 to 3, wherein a 90-degree peel strength at 25 ° C of the first metal layer and the second metal layer is 0.1 N / m or more and 100 N / m or less. With composite metal layer.   The composite metal layer with a film for a semiconductor according to any one of claims 1 to 4, wherein the composite metal layer further has a release layer between the first metal layer and the second metal layer.   The composite metal layer with a film for a semiconductor according to claim 5, wherein a material of the release layer is a metal or a metal oxide.   The composite metal layer with a film for semiconductor according to any one of claims 1 to 6, wherein a 90-degree peel strength at 25 ° C between the second metal layer and the resin layer A is 5 N / m or more.   The composite metal layer with a film for semiconductor according to any one of claims 1 to 7, wherein the resin layer A has a glass transition temperature of 100 to 300 ° C.   The composite metal layer with a film for semiconductor according to any one of claims 1 to 8, wherein a temperature at which the weight of the resin layer A decreases by 5 wt% is 300 ° C or higher.   The composite metal layer with a film for semiconductor according to claim 1, wherein the resin layer A has an elastic modulus at 150 ° C. of 0.1 MPa or more.   The composite metal layer with a film for a semiconductor according to any one of claims 1 to 10, wherein the resin layer A contains a thermoplastic resin having an amide group, an ester group, an imide group, an ether group or a sulfone group.   The film for semiconductors laminated | stacked on the composite metal layer with a film for semiconductors in any one of Claims 1-11.   The film with a wiring circuit formed by etching the composite metal layer in the composite metal layer with a film for semiconductors in any one of Claims 1-11, and forming a wiring circuit. The film with a wiring circuit according to claim 13,
A semiconductor element adhered to a predetermined position of a wiring circuit formed on the film with the wiring circuit;
A wire for connecting the semiconductor element and the wiring circuit, and a sealing material for sealing the wiring circuit, the semiconductor element and the wire,
A semiconductor device with a film for semiconductors.   The semiconductor device with a film for a semiconductor device according to claim 14, wherein a 90-degree peel strength at at least one point in a temperature range of 0 to 250 ° C. between the sealing material and the resin layer A is 1000 N / m or less.   The semiconductor device obtained by peeling the 2nd metal layer and the film for semiconductors from the semiconductor device with a film for semiconductors of Claim 14 or 15. A step of forming a wiring circuit by etching the composite metal layer in the composite metal layer with a film for a semiconductor according to any one of claims 1 to 11,
Bonding a semiconductor element to a die pad of the wiring circuit;
Connecting the wiring circuit and the semiconductor element by a wire;
A step of sealing the wiring circuit, the semiconductor element and the wire with a sealing material, and a step of peeling the second metal layer and the semiconductor film from the wiring circuit and the sealing material made of the first metal layer;
A method for manufacturing a semiconductor device comprising:

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