JPH0436090B2 - - Google Patents
Info
- Publication number
- JPH0436090B2 JPH0436090B2 JP59182772A JP18277284A JPH0436090B2 JP H0436090 B2 JPH0436090 B2 JP H0436090B2 JP 59182772 A JP59182772 A JP 59182772A JP 18277284 A JP18277284 A JP 18277284A JP H0436090 B2 JPH0436090 B2 JP H0436090B2
- Authority
- JP
- Japan
- Prior art keywords
- monosilane
- ppm
- oxygen
- nitrogen
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 11
- 239000005046 Chlorosilane Substances 0.000 claims description 10
- 239000003638 chemical reducing agent Substances 0.000 claims description 10
- 238000010926 purge Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000007872 degassing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 description 8
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000005049 silicon tetrachloride Substances 0.000 description 6
- -1 lithium aluminum hydride Chemical compound 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 125000005234 alkyl aluminium group Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052987 metal hydride Inorganic materials 0.000 description 3
- 150000004681 metal hydrides Chemical class 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012280 lithium aluminium hydride Substances 0.000 description 2
- SIAPCJWMELPYOE-UHFFFAOYSA-N lithium hydride Chemical compound [LiH] SIAPCJWMELPYOE-UHFFFAOYSA-N 0.000 description 2
- 229910000103 lithium hydride Inorganic materials 0.000 description 2
- 239000002808 molecular sieve Substances 0.000 description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910000102 alkali metal hydride Inorganic materials 0.000 description 1
- 150000008046 alkali metal hydrides Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 210000000608 photoreceptor cell Anatomy 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18277284A JPS6163515A (ja) | 1984-09-03 | 1984-09-03 | モノシランの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18277284A JPS6163515A (ja) | 1984-09-03 | 1984-09-03 | モノシランの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6163515A JPS6163515A (ja) | 1986-04-01 |
| JPH0436090B2 true JPH0436090B2 (fr) | 1992-06-15 |
Family
ID=16124147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18277284A Granted JPS6163515A (ja) | 1984-09-03 | 1984-09-03 | モノシランの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6163515A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL200229B1 (pl) * | 1999-05-14 | 2008-12-31 | Ge Energy Usa | Sposób odzyskiwania strumienia gazu wodorowego z gazu syntezowego |
| JP5338030B2 (ja) * | 2007-01-31 | 2013-11-13 | 大正製薬株式会社 | アダパレン含有外用剤組成物 |
| ATE508985T1 (de) | 2007-03-30 | 2011-05-15 | Spawnt Private Sarl | Katalytische hydrierung |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58120511A (ja) * | 1982-01-07 | 1983-07-18 | Matsushita Electric Ind Co Ltd | シランの精製法 |
-
1984
- 1984-09-03 JP JP18277284A patent/JPS6163515A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58120511A (ja) * | 1982-01-07 | 1983-07-18 | Matsushita Electric Ind Co Ltd | シランの精製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6163515A (ja) | 1986-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU2368568C2 (ru) | Способ получения кремния | |
| JP5122700B1 (ja) | モノシランの精製方法 | |
| EP2634142A1 (fr) | Procédé pour la purification de chlorosilanes | |
| US4659552A (en) | Scavengers for the removal of impurities from arsine and phosphine | |
| EP1867604B1 (fr) | Procede de purification d hexachlorure de disilicium et hexachlorure de disilicium de purete elevee | |
| CN1769289B (zh) | 有机金属化合物精制方法及由此制得的有机金属化合物 | |
| EP0510529B1 (fr) | L'épuration de hexafluorure de soufre | |
| JP2719211B2 (ja) | 高次シランの製造法 | |
| JPH0436090B2 (fr) | ||
| JP6984446B2 (ja) | 高純度三塩化ホウ素の製造方法 | |
| US4696953A (en) | Scavengers for the removal of impurities from arsine and phosphine | |
| JP7069473B2 (ja) | 高純度三塩化ホウ素の製造方法 | |
| WO2014163414A1 (fr) | Procédé de préparation d'un polysilane | |
| JPH11124386A (ja) | トリメトキシシランの安定化方法 | |
| JP2019119614A (ja) | 高純度三塩化ホウ素の製造方法 | |
| JP3827358B2 (ja) | 塩酸水溶液の製造方法 | |
| JPH0218286B2 (fr) | ||
| JPS6197129A (ja) | フルオロシラン類の精製法 | |
| JP2536360B2 (ja) | クロルシラン類の精製方法 | |
| JPH0459518B2 (fr) | ||
| JPH0480848B2 (fr) | ||
| JPH06220069A (ja) | タンタルアルコキシドの精製方法、及び高純度タンタルアルコキシド並びにこれを用いた気相成長法 | |
| JP2001048519A (ja) | フルオロシランガスの精製方法 | |
| JPS6241166B2 (fr) | ||
| JPS59116117A (ja) | 水素化ケイ素の新製造方法 |