JPH04356942A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPH04356942A
JPH04356942A JP25235891A JP25235891A JPH04356942A JP H04356942 A JPH04356942 A JP H04356942A JP 25235891 A JP25235891 A JP 25235891A JP 25235891 A JP25235891 A JP 25235891A JP H04356942 A JPH04356942 A JP H04356942A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
sheet
circuit board
surface protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25235891A
Other languages
Japanese (ja)
Other versions
JP3165192B2 (en
Inventor
Chiaki Kudo
千秋 工藤
Takahiro Shibuya
渋谷 孝弘
Masao Mochizuki
望月 正生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP25235891A priority Critical patent/JP3165192B2/en
Publication of JPH04356942A publication Critical patent/JPH04356942A/en
Application granted granted Critical
Publication of JP3165192B2 publication Critical patent/JP3165192B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To prevent that the surface of a chip is contaminated with dust produced in a cutting and dividing operation and to obtain a semiconductor integrated circuit device whose reliability is high. CONSTITUTION:A sheet 12 for surface protective use is pasted on the surface of a semiconductor integrated circuit substrate 1. Only the semiconductor integrated circuit substrate 1 is cut into pieces from the rear side in such a way that the sheet is left; it is divided into semiconductor integrated circuit chips 1C; after that, the sheet 12 is stripped. Desirably, the sheet 1 is pasted on the surface of the substrate 1 via an ultraviolet curing adhesive P. The surface of the substrate is irradiated with ultraviolet rays before the sheet is stripped. The adhesive is hardened so that the sheet can be stripped easily.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、半導体集積回路装置の
製造方法に係り、特に半導体集積回路基板をチップに分
断する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of cutting a semiconductor integrated circuit board into chips.

【0002】0002

【従来の技術】近年、半導体集積回路の分野では、素子
の高密度化、集積化が進められており、素子の微細化は
進む一方である。
2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits, the density and integration of elements have been increasing, and the miniaturization of elements has continued to progress.

【0003】このような半導体集積回路装置は、通常、
シリコン基板等の半導体基板に多数の集積回路を作り込
み、完成後、半導体集積回路チップに分断し、これらの
半導体集積回路チップをリードフレームあるいはテープ
キャリアなどの実装部材に装着し、チップの周りを樹脂
等で封止して得られる。
[0003] Such semiconductor integrated circuit devices usually have
A large number of integrated circuits are fabricated on a semiconductor substrate such as a silicon substrate, and after completion, it is divided into semiconductor integrated circuit chips, these semiconductor integrated circuit chips are mounted on a mounting member such as a lead frame or a tape carrier, and the area around the chip is Obtained by sealing with resin or the like.

【0004】ところで、この集積回路基板を半導体集積
回路チップに分断する工程は、通常、次のようにして行
われている。
By the way, the process of dividing this integrated circuit board into semiconductor integrated circuit chips is normally carried out as follows.

【0005】図5(a) に示すように、半導体集積回
路基板1に表面保護シート2を気泡が出ないように貼着
するとともに、裏面に固定用シート7をはりつけ、吸着
ステージ3に半導体集積回路基板1を装着し、吸着穴1
0から真空吸引を行うことにより、吸着ステージ3に半
導体集積回路基板1を固定する。
As shown in FIG. 5(a), a surface protection sheet 2 is pasted on the semiconductor integrated circuit board 1 to prevent air bubbles from appearing, and a fixing sheet 7 is pasted on the back surface, and the semiconductor integrated circuit board 1 is placed on the suction stage 3. Attach circuit board 1 and attach suction hole 1
The semiconductor integrated circuit board 1 is fixed to the suction stage 3 by performing vacuum suction from zero.

【0006】そして、TVカメラを介しモニタTV5に
よって位置合わせを行いながら薄刃カッター4を走査し
、順次半導体集積回路基板1を切断し、半導体集積回路
チップ1Cに分断する。  このようにして、分断した
後、図5(b) に示すように、表面保護シートを剥が
し、実装ラインに搬送される。
[0006] Then, the thin blade cutter 4 is scanned while positioning is performed by the monitor TV5 through the TV camera, and the semiconductor integrated circuit board 1 is sequentially cut into semiconductor integrated circuit chips 1C. After dividing in this way, the surface protection sheet is peeled off and the sheet is transported to the mounting line, as shown in FIG. 5(b).

【0007】この場合、表面保護シートを剥がす際、表
面保護シートの接着剤がチップ表面に残ったり、切り屑
8が切断ライン(スクライブライン)の脇に盛り上がっ
て残り、表面保護シートを剥がす際、切り屑8が押され
て倒れ、この倒れた切り屑が飛び散ることにより、チッ
プ表面にごみや汚れの付着および傷等が発生することが
ある。従来、これらが原因で、しばしば半導体集積回路
の誤動作等の悪影響をもたらすことがあった。
In this case, when the surface protection sheet is removed, the adhesive of the surface protection sheet may remain on the chip surface, or the chips 8 may remain raised beside the cutting line (scribe line), and when the surface protection sheet is removed, The chips 8 are pushed and fall down, and the fallen chips scatter, which may cause dust and dirt to adhere to the chip surface, as well as scratches. Conventionally, these have often caused adverse effects such as malfunction of semiconductor integrated circuits.

【0008】そこでこのような切り屑の発生を低減する
ために、切断する際に半導体集積回路基板の厚さの半分
だけ切断し(ハーフカット)、後に圧力をかけて分断す
る方法や、半導体集積回路基板の厚さを最初から薄くし
ておく等の方法が提案されている。しかしながら、切り
屑が表面に飛び散り、ごみや汚れの付着および傷等が発
生するという問題は依然として改善されていない。
[0008] In order to reduce the generation of such chips, there is a method of cutting only half the thickness of the semiconductor integrated circuit board (half-cut) and then dividing it by applying pressure. Methods have been proposed, such as reducing the thickness of the circuit board from the beginning. However, the problem of chips scattering on the surface, adhesion of dust and dirt, and occurrence of scratches remains unresolved.

【0009】[0009]

【発明が解決しようとする課題】このように、従来の切
断方法では、チップ表面が接着剤に汚染されたり、表面
保護シートを剥がす際、切り屑8が押されて倒れ、この
倒れた切り屑が飛び散ること等により、チップ表面にご
みや汚れの付着および傷等が発生し、半導体集積回路の
誤動作をもたらすという問題があった。
[Problems to be Solved by the Invention] As described above, in the conventional cutting method, the chip surface may be contaminated with adhesive, or when the surface protection sheet is peeled off, the chips 8 may be pushed and fall down. There is a problem in that dust and dirt adhere to the chip surface and scratches occur due to the scattering of the chips, resulting in malfunction of the semiconductor integrated circuit.

【0010】本発明は前記実情に鑑みてなされたもので
、分断時の切り屑によるチップ表面の汚染を防止し、信
頼性の高い半導体集積回路装置を得ることを目的とする
The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to prevent the chip surface from being contaminated by chips during cutting and to obtain a highly reliable semiconductor integrated circuit device.

【0011】[0011]

【課題を解決するための手段】そこで本発明の第1では
、半導体集積回路基板の表面に表面保護用のシートを貼
着して、表面保護用のシートを残すように裏面側から半
導体集積回路基板を切断し、この後表面保護用のシート
を剥がし、分断された半導体集積回路チップを得るよう
にしている。
[Means for Solving the Problems] Therefore, in the first aspect of the present invention, a surface protection sheet is pasted on the surface of a semiconductor integrated circuit board, and the semiconductor integrated circuit is The substrate is cut, and then the surface protection sheet is peeled off to obtain divided semiconductor integrated circuit chips.

【0012】望ましくは、シートの貼着を、紫外線硬化
型接着剤を介して行うようにし、剥離に先立ち、半導体
集積回路基板の表面に紫外線を照射し、紫外線硬化型接
着剤を硬化させ、シートを剥離しやすい状態にするよう
にしている。
[0012] Preferably, the sheet is attached using an ultraviolet curable adhesive, and prior to peeling, the surface of the semiconductor integrated circuit board is irradiated with ultraviolet rays to harden the ultraviolet curable adhesive, and the sheet is It is made to be in a state where it can be easily peeled off.

【0013】また本発明の第2では、切断される領域に
沿って、切断される領域よりもやや大きい領域に選択的
に接着剤層を形成し、この接着剤層によって半導体集積
回路基板の表面に表面保護用のシートを貼着し、この表
面保護用のシートと共に、前記半導体集積回路基板を切
断し、半導体集積回路チップに分断し、この後表面保護
用のシートを剥離するようにしている。
In the second aspect of the present invention, an adhesive layer is selectively formed along the area to be cut in an area slightly larger than the area to be cut, and the surface of the semiconductor integrated circuit board is bonded by this adhesive layer. A surface protection sheet is pasted on the surface protection sheet, the semiconductor integrated circuit board is cut together with the surface protection sheet to divide it into semiconductor integrated circuit chips, and then the surface protection sheet is peeled off. .

【0014】さらに本発明の第3では、表面保護用のシ
ートの裏面全体に紫外線硬化型接着剤を塗布するととも
にこのシートの表面に、切断される領域に相当する領域
よりもやや大きい領域に遮光膜パターンを形成しこの遮
光膜パターンをマスクとして紫外線を照射し、前記シー
トの切断される領域を除く領域の紫外線硬化型接着剤を
選択的に硬化させたのち、シートを半導体集積回路基板
の表面に貼着して、表面保護用のシートと共に、半導体
集積回路基板を切断し、半導体集積回路チップに分断し
、さらに表面保護用のシートを剥離するようにしている
Furthermore, in the third aspect of the present invention, an ultraviolet curable adhesive is applied to the entire back surface of the surface protection sheet, and a light shielding layer is applied to the surface of the sheet in an area slightly larger than the area corresponding to the area to be cut. A film pattern is formed, and ultraviolet rays are irradiated using this light-shielding film pattern as a mask to selectively harden the UV-curable adhesive in areas other than the areas to be cut of the sheet, and then the sheet is placed on the surface of a semiconductor integrated circuit board. The semiconductor integrated circuit board is cut into semiconductor integrated circuit chips together with the surface protection sheet, and the surface protection sheet is then peeled off.

【0015】望ましくは剥離に先立ち、半導体集積回路
基板の表面に紫外線を照射し、前記紫外線硬化型接着剤
を硬化させ、シートを剥離しやすい状態にした後剥離す
る。
Preferably, prior to peeling, the surface of the semiconductor integrated circuit board is irradiated with ultraviolet rays to cure the ultraviolet curable adhesive and to make the sheet easy to peel, and then peeled off.

【0016】[0016]

【作用】上記第1の構成によれば、半導体集積回路基板
の表面に表面保護用のシートを貼着して、裏面側から切
断し、半導体集積回路チップに分断するようにしている
ため、切り屑は発生するとしても半導体集積回路基板の
裏面側であり、表面の汚染は低減される。そして表面保
護用のシートを残すように裏面側から半導体集積回路基
板を切断しているため、切断後、シートは一体として残
っており、剥離が容易である。
[Operation] According to the first configuration, a surface protection sheet is attached to the front surface of the semiconductor integrated circuit board, and the semiconductor integrated circuit board is cut from the back side to be divided into semiconductor integrated circuit chips. Even if debris is generated, it is on the back side of the semiconductor integrated circuit board, and contamination on the front surface is reduced. Since the semiconductor integrated circuit board is cut from the back side so as to leave the surface protection sheet, the sheet remains as one piece after cutting and is easy to peel off.

【0017】そして、シートの貼着を、紫外線硬化型接
着剤を介して行うようにし、剥離に先立ち、半導体集積
回路基板の表面に紫外線を照射し、紫外線硬化型接着剤
を硬化させるようにすることにより、シートは剥離しや
すい状態となる。
[0017] Then, the sheet is attached using an ultraviolet curable adhesive, and prior to peeling off, the surface of the semiconductor integrated circuit board is irradiated with ultraviolet rays to harden the ultraviolet curable adhesive. This puts the sheet in a state where it is easy to peel off.

【0018】また第2の構成によれば、切断される領域
に沿って、切断される領域よりもやや大きい領域に選択
的に接着剤層を形成し、この表面保護用のシートを半導
体集積回路基板の表面に貼着しているため、この表面保
護用のシートと共に、半導体集積回路基板を切断した際
に、切断面の近傍は接着剤層によって固着され、半導体
基板の素子領域は、接着剤で表面を汚染されることなく
切断面の側面でのみ固着されたシートによって保護され
ているため、切り屑等で汚染されることもない。また、
この表面保護シートを固着するための接着剤層としては
、紫外線硬化型接着剤を用いることにより、剥離に先立
ち紫外線照射を行うことにより、容易に剥離することが
できる。
Further, according to the second configuration, an adhesive layer is selectively formed along the area to be cut in an area slightly larger than the area to be cut, and this surface protection sheet is attached to the semiconductor integrated circuit. Since it is attached to the surface of the substrate, when the semiconductor integrated circuit board is cut together with this surface protection sheet, the area near the cut surface is fixed by the adhesive layer, and the element area of the semiconductor substrate is protected by the adhesive layer. Since the surface is protected by the sheet that is fixed only on the side of the cut surface, it is not contaminated with chips or the like. Also,
By using an ultraviolet curing adhesive as the adhesive layer for fixing this surface protection sheet, it can be easily peeled off by irradiating it with ultraviolet light prior to peeling.

【0019】また本発明の第3では、表面保護用のシー
トの裏面全体に紫外線硬化型接着剤を塗布するとともに
このシートの表面に、切断される領域に相当する領域よ
りもやや大きい領域に遮光膜パターンを形成しこの遮光
膜パターンをマスクとして紫外線を照射し、前記シート
の切断される領域を除く領域の紫外線硬化型接着剤を選
択的に硬化させたのちにこのシートを半導体集積回路基
板の表面に貼着することにより、前記第2の構成と同様
、この表面保護用のシートと共に、半導体集積回路基板
を切断した際に、切断面の近傍は接着剤層によって固着
され、半導体基板の素子領域は、接着剤で表面を汚染さ
れることなく切断面の側面でのみ表面保護用のシートに
固着され、この接着剤層およびシートによって保護され
ているため、切り屑等で汚染されることもない。また、
ここでも、剥離に先立ち紫外線照射を行うことにより、
容易に剥離することができる。
Further, in the third aspect of the present invention, an ultraviolet curing adhesive is applied to the entire back surface of the surface protection sheet, and a light shielding layer is applied to the surface of the sheet in an area slightly larger than the area corresponding to the area to be cut. A film pattern is formed, and ultraviolet rays are irradiated using this light-shielding film pattern as a mask to selectively harden the ultraviolet curable adhesive in areas of the sheet excluding the areas to be cut, and then this sheet is attached to a semiconductor integrated circuit board. By adhering it to the surface, when the semiconductor integrated circuit board is cut together with this surface protection sheet, the vicinity of the cut surface is fixed by the adhesive layer, and the elements of the semiconductor substrate are The area is adhered to the surface protection sheet only on the side of the cut surface without contaminating the surface with adhesive, and because it is protected by this adhesive layer and sheet, it is also free from contamination with chips etc. do not have. Also,
Here too, by performing ultraviolet irradiation prior to peeling,
Can be easily peeled off.

【0020】[0020]

【実施例】以下本発明の実施例について、図面を参照し
つつ詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described in detail below with reference to the drawings.

【0021】実施例1 図1は、本発明の第1の実施例の半導体集積回路基板の
切断方法を示す図である。
Embodiment 1 FIG. 1 is a diagram showing a method of cutting a semiconductor integrated circuit board according to a first embodiment of the present invention.

【0022】まず図1(a) に示すように、シリコン
IC等の半導体集積回路基板1の表面、すなわち集積回
路の形成された側に厚さ80μm のポリエチレンまた
はポリオレフィンフィルムからなる表面保護シート12
を気泡が出ないように厚さ10μmの紫外線硬化型接着
剤Pを介して貼着する。そして、この半導体集積回路基
板1をガラス等の赤外線透過性の材料からなる、吸着ス
テージ13にこの半導体集積回路基板1の表面を下にし
て装着し、吸着穴10から真空吸引を行うことにより、
吸着ステージ13に半導体集積回路基板1を固定する。 ここでは表面保護シート12および紫外線硬化型接着剤
Pとしては、両者が一体化された、D−604MSと指
称されているリンテック社の紫外線硬化型ダイシングシ
ートを用いた。
First, as shown in FIG. 1(a), a surface protection sheet 12 made of polyethylene or polyolefin film with a thickness of 80 μm is placed on the surface of a semiconductor integrated circuit board 1 such as a silicon IC, that is, on the side on which the integrated circuit is formed.
are attached using a 10 μm thick ultraviolet curable adhesive P to prevent air bubbles from appearing. Then, this semiconductor integrated circuit board 1 is mounted on a suction stage 13 made of an infrared transparent material such as glass with the surface of this semiconductor integrated circuit board 1 facing down, and vacuum suction is performed from the suction hole 10.
The semiconductor integrated circuit board 1 is fixed on the suction stage 13. Here, as the surface protection sheet 12 and the ultraviolet curable adhesive P, an ultraviolet curable dicing sheet manufactured by Lintec and designated as D-604MS, in which both are integrated, was used.

【0023】そして、基板の表面側から赤外線ランプ1
6によって集積回路基板1に光照射を行い、この透過光
を赤外線ビジコンカメラを用いて、回路基板1に形成さ
れているスクライブライン9のパターンをモニタTV1
5に映し、位置合わせを行いながら高さ調整した薄刃カ
ッター4を走査し、順次半導体集積回路基板1を切断し
、半導体集積回路チップ1Cに分断する。このとき表面
保護シート12は切断することなく残した状態にしてお
く。
Then, an infrared lamp 1 is inserted from the front side of the substrate.
6, the integrated circuit board 1 is irradiated with light, and the transmitted light is used to monitor the pattern of the scribe line 9 formed on the circuit board 1 using an infrared vidicon camera.
5, the thin blade cutter 4 whose height has been adjusted while positioning is scanned to sequentially cut the semiconductor integrated circuit substrate 1 and divide it into semiconductor integrated circuit chips 1C. At this time, the surface protection sheet 12 is left uncut.

【0024】このようにして、分断した後、ステージ1
3に固定したまま図1(b) に示すように、半導体集
積回路基板1の裏面側に固定シート7を貼着する。この
固定シート7も表面保護シート12と同様厚さ80μm
 のポリエチレンまたはポリオレフィンフィルムから構
成され紫外線硬化型接着剤(図示せず)を介して貼着さ
れる。
After dividing in this way, stage 1
As shown in FIG. 1(b), a fixing sheet 7 is attached to the back side of the semiconductor integrated circuit board 1 while the semiconductor integrated circuit board 1 is still fixed to the substrate 3. This fixing sheet 7 also has a thickness of 80 μm like the surface protection sheet 12.
It is made of polyethylene or polyolefin film and is attached with an ultraviolet curable adhesive (not shown).

【0025】そして図1(c) に示すように、半導体
集積回路基板1の表面側から、UV照射を行う。
Then, as shown in FIG. 1(c), UV irradiation is performed from the front side of the semiconductor integrated circuit board 1.

【0026】ここで紫外線硬化型接着剤Pは、図1(d
) に示すように、硬化して状態変化しP´となって、
接着力が低下し、剥離しやすい状態となったところで、
表面保護シート12を一括して剥離する。ここで固定シ
ート7の紫外線硬化型接着剤も光が当たった領域では接
着力が低下するが、この場合は、基板の表面側すなわち
集積回路が形成された側からのUV照射であるため、チ
ップの配線パターンのある領域では光が遮断されること
になり、接着状態を維持することができる。
Here, the ultraviolet curing adhesive P is shown in FIG.
), it hardens and changes state to become P',
When the adhesive strength decreases and it becomes easy to peel off,
The surface protection sheet 12 is peeled off all at once. Here, the adhesive strength of the UV-curable adhesive of the fixing sheet 7 also decreases in areas exposed to light, but in this case, the UV irradiation is from the front side of the substrate, that is, the side on which the integrated circuit is formed, so the chip Light is blocked in a certain area of the wiring pattern, and the adhesive state can be maintained.

【0027】そして、この固定シート7上に固定された
状態で実装ラインに搬送される。
[0027] Then, it is conveyed to the mounting line while being fixed on the fixing sheet 7.

【0028】そして固定シート7を伸ばし、チップ間間
隔を大きくし、貼着面すなわち基板の裏面側から再びU
V照射を行い、同様に硬化させ、接着力が低下し、剥離
しやすい状態となったところで、コレットを用いて1個
づつ移送し、リードフレームあるいはフィルムキャリア
等に位置決めし、装着する。
Then, the fixing sheet 7 is stretched, the interval between the chips is increased, and the U
V irradiation is performed to cure the film in the same manner, and when the adhesive strength is reduced and it becomes easy to peel off, the film is transferred one by one using a collet, positioned and mounted on a lead frame or film carrier, etc.

【0029】このようにして形成される半導体集積回路
チップは、表面に切り屑が付着したりすることなく得る
ことができ、良好な表面状態を維持することができる。
The semiconductor integrated circuit chip formed in this manner can be obtained without any chips adhering to the surface, and can maintain a good surface condition.

【0030】また、シートは分断されることなく、一体
のまま残っている上、UV照射により、表面保護シート
の接着力を低下することができるため、表面保護シート
の剥離が容易である。
[0030]Furthermore, since the sheet remains in one piece without being divided, and the adhesive force of the surface protection sheet can be reduced by UV irradiation, the surface protection sheet can be easily peeled off.

【0031】なお、ここでは半導体集積回路基板の裏面
からスクライブラインを検出するために、ガラス等の赤
外線透過性材料で形成した吸着ステージを用い、下側か
ら赤外線照射を行い、透過光を検出するようにしたが、
検出手段を下側におき、反射光を検出するようにしても
よい。
[0031] Here, in order to detect the scribe line from the back side of the semiconductor integrated circuit board, a suction stage made of an infrared transparent material such as glass is used, infrared rays are irradiated from the bottom side, and transmitted light is detected. I tried, but
The detection means may be placed on the lower side to detect reflected light.

【0032】実施例2 図2は、本発明の第2の実施例の半導体集積回路基板の
切断方法を示す説明図、図3(a) 乃至(i) はこ
の工程断面図である。
Embodiment 2 FIG. 2 is an explanatory diagram showing a method of cutting a semiconductor integrated circuit board according to a second embodiment of the present invention, and FIGS. 3(a) to 3(i) are cross-sectional views of this process.

【0033】この方法では、切断線すなわち切断される
領域24に沿って、切断される領域よりもやや大きい領
域に選択的に接着剤層23を形成し、この接着剤層23
によって半導体集積回路基板11の表面に表面保護用の
シート25を貼着し、この表面保護用のシートと共に、
半導体集積回路基板を切断し、半導体集積回路チップに
分断し、この後表面保護用のシートを剥離するようにし
たことを特徴とするものである。ここで22は素子領域
すなわち表面保護を行うべき領域である。
In this method, the adhesive layer 23 is selectively formed along the cutting line, that is, the area 24 to be cut, in an area slightly larger than the area to be cut, and this adhesive layer 23 is
A surface protection sheet 25 is pasted on the surface of the semiconductor integrated circuit board 11, and together with this surface protection sheet,
This method is characterized in that a semiconductor integrated circuit board is cut and divided into semiconductor integrated circuit chips, and then a surface protection sheet is peeled off. Here, 22 is an element area, that is, an area where the surface should be protected.

【0034】まず図3(a) に示すように、シリコン
IC等の集積回路22の形成された半導体集積回路基板
11を形成する。ここで24は切断線すなわちダイシン
グ工程で切断される領域である。
First, as shown in FIG. 3(a), a semiconductor integrated circuit substrate 11 on which an integrated circuit 22 such as a silicon IC is formed is formed. Here, 24 is a cutting line, that is, a region to be cut in the dicing process.

【0035】次いで、図3(b) に示すように、厚さ
80μm のポリエチレンまたはポリオレフィンフィル
ムからなる表面保護シート25表面に、印刷法で半導体
集積回路基板11の切断領域24よりも60μm 程度
大きく形成された厚さ50μm の紫外線硬化型接着剤
からなる格子状パターン23を形成し、このパターン2
3が半導体集積回路基板11の切断領域24に一致する
ように固着する。固着した状態を図3(c) に示す。
Next, as shown in FIG. 3(b), a surface protection sheet 25 made of polyethylene or polyolefin film with a thickness of 80 μm is formed by a printing method to be approximately 60 μm larger than the cutting area 24 of the semiconductor integrated circuit board 11. A lattice pattern 23 made of ultraviolet curing adhesive with a thickness of 50 μm is formed, and this pattern 2
3 is fixed so as to coincide with the cutting area 24 of the semiconductor integrated circuit board 11. The fixed state is shown in Figure 3(c).

【0036】この後、吸着ステージ上に装着された固定
シート17にこの半導体集積回路基板11の裏面を下に
して装着し、固定シート17に半導体集積回路基板11
を固定し、ダイシングマシン18を用いて図3(d) 
に示すように基板の表面からダイシングを行う。このと
き切断面には接着剤が残っているため、素子領域は良好
に保護されている。
Thereafter, the semiconductor integrated circuit board 11 is mounted with the back side facing down on the fixing sheet 17 mounted on the suction stage, and the semiconductor integrated circuit board 11 is placed on the fixing sheet 17.
3(d) using the dicing machine 18.
Dicing is performed from the surface of the substrate as shown in . At this time, since adhesive remains on the cut surface, the element area is well protected.

【0037】この後、基板表面から約5秒間紫外線照射
を行い、接着剤を硬化せしめて接着性を低下させる。こ
こで紫外線硬化型接着剤は、図3(e) に示すように
、硬化して状態変化しP´となって、接着力が低下し、
剥離しやすい状態となる。
Thereafter, the surface of the substrate is irradiated with ultraviolet rays for about 5 seconds to cure the adhesive and reduce its adhesive properties. Here, as shown in Figure 3(e), the ultraviolet curable adhesive hardens and changes its state to become P', reducing its adhesive strength.
It becomes easy to peel off.

【0038】そして図3(f) に示すように、表面保
護シート25の表面に粘着性テープ20を貼着し、この
表面保護シート25を一括して剥離する。
Then, as shown in FIG. 3(f), an adhesive tape 20 is attached to the surface of the surface protection sheet 25, and the surface protection sheet 25 is peeled off all at once.

【0039】そして、この固定シート17上に固定され
た状態で実装ラインに搬送される。そして図3(g) 
に示すように、固定シート17を伸ばし、チップ間間隔
を大きくし、さらに図3(h) に示すように、貼着面
すなわち基板の裏面側から再びUV照射を行い、同様に
硬化させ、接着力が低下し、剥離しやすい状態となった
ところで、図3(i) に示すようにコレット21を用
いて1個づつ移送し、リードフレームあるいはフィルム
キャリア等に位置決めし、装着する。
[0039] Then, it is conveyed to the mounting line while being fixed on this fixed sheet 17. and Figure 3(g)
As shown in Figure 3(h), the fixing sheet 17 is stretched to increase the inter-chip spacing, and as shown in Figure 3(h), UV irradiation is applied again from the adhesive side, that is, the back side of the substrate, and the adhesive is cured in the same manner. When the force decreases and the film becomes easy to peel off, the collet 21 is used to transport the film one by one as shown in FIG. 3(i), position it on a lead frame or film carrier, and mount it.

【0040】このようにして形成される半導体集積回路
チップは、素子領域表面が接着剤で汚染されたり、切り
屑が付着したりすることなく、得ることができ、良好な
表面状態を維持することができる。
The semiconductor integrated circuit chip thus formed can be obtained without the surface of the element region being contaminated with adhesive or adhering to chips, and can maintain a good surface condition. Can be done.

【0041】なお、この例では、接着剤として紫外線硬
化型パターンを用いるようにしたが、必ずしも紫外線硬
化型である必要はなく、通常の接着剤を用いても良い。 またパターン形成に際しても、スクリーン印刷法のみな
らず、マスクパターンを介して塗布するマスク塗布法等
を用いても良い。
In this example, an ultraviolet curable pattern is used as the adhesive, but it is not necessarily an ultraviolet curable pattern, and a normal adhesive may be used. Further, when forming a pattern, not only a screen printing method but also a mask coating method in which coating is applied via a mask pattern, etc. may be used.

【0042】実施例3 図4(a) 乃至(i) は、本発明の第3の実施例の
半導体集積回路基板の切断方法を示す工程断面図である
Embodiment 3 FIGS. 4(a) to 4(i) are process cross-sectional views showing a method for cutting a semiconductor integrated circuit board according to a third embodiment of the present invention.

【0043】実施例2では接着剤をパターン印刷したが
、この方法では、裏面全体に紫外線硬化型接着剤33の
塗布された表面保護用のシート35を用い、この表面に
、半導体集積回路基板の切断線すなわち切断される領域
34に沿って、切断される領域よりもやや大きい領域に
選択的に遮光パターン30を形成しておき、この遮光パ
ターン30を介しての露光によって接着機能を選択的に
低下せしめ、接着性領域33Sをパターン状に残すよう
にしたことを特徴とするもので、他については実施例2
と同様である。ここで32は素子領域すなわち表面保護
を行うべき領域である。
In Example 2, a pattern of adhesive was printed, but in this method, a surface protection sheet 35 coated with an ultraviolet curable adhesive 33 on the entire back side is used, and a semiconductor integrated circuit board is printed on the surface of this sheet 35 for surface protection. A light-shielding pattern 30 is selectively formed along the cutting line, that is, the region 34 to be cut, in an area slightly larger than the region to be cut, and the adhesive function is selectively enhanced by exposure through this light-shielding pattern 30. The adhesive region 33S is left in a pattern, and the other features are as in Example 2.
It is similar to Here, 32 is an element area, that is, an area where surface protection is to be performed.

【0044】まず図4(a) に示すように、厚さ80
μm のポリエチレンまたはポリオレフィンフィルムか
らなる表面保護シート25裏面全体に、厚さ50μm 
の紫外線硬化型接着剤33を塗布し、さらに表面に印刷
法で半導体集積回路基板31の切断領域34よりも60
μm 程度大きく形成された厚さ50μm のCrから
なる遮光膜の格子状パターン30を形成する。
First, as shown in FIG. 4(a), the thickness is 80 mm.
The entire back surface of the surface protection sheet 25 made of polyethylene or polyolefin film with a thickness of 50 μm
An ultraviolet curable adhesive 33 is applied to the surface, and the area 60
A lattice-like pattern 30 of a light-shielding film made of Cr and having a thickness of 50 μm is formed with a thickness of about 1 μm.

【0045】この後、図4(b) に示すように表面側
から紫外線を照射し、前記遮光膜の格子状パターン30
の下以外の領域の紫外線硬化型接着剤を硬化せしめ、格
子状パターン30の下の領域のみを接着性領域33Sと
して残す。
Thereafter, as shown in FIG. 4(b), ultraviolet rays are irradiated from the surface side to form the lattice pattern 30 of the light shielding film.
The ultraviolet curable adhesive in the area other than under the lattice pattern 30 is cured, leaving only the area under the grid pattern 30 as an adhesive area 33S.

【0046】この後図4(c) に示すように、このよ
うに前記シートの裏面に、切断工程において切断される
領域に相当する領域よりもやや大きい領域にパターンを
形成するように接着性領域を残したシートを、このパタ
ーン状の接着性領域33Sが半導体集積回路基板31の
切断領域34に一致するように固着する。この半導体集
積回路基板31の表面にはシリコンIC等の集積回路3
2が形成されている。ここで34は切断線すなわちダイ
シング工程で切断される領域である。
After this, as shown in FIG. 4(c), an adhesive area is formed on the back side of the sheet so as to form a pattern in an area slightly larger than the area corresponding to the area to be cut in the cutting process. The remaining sheet is fixed so that the patterned adhesive area 33S corresponds to the cutting area 34 of the semiconductor integrated circuit board 31. An integrated circuit 3 such as a silicon IC is provided on the surface of this semiconductor integrated circuit board 31.
2 is formed. Here, 34 is a cutting line, that is, a region to be cut in the dicing process.

【0047】そして、固着した状態を図4(d) に示
す。
The fixed state is shown in FIG. 4(d).

【0048】この後、吸着ステージ上に装着された固定
シート17にこの半導体集積回路基板31の裏面を下に
して装着し、固定シート17に半導体集積回路基板31
を固定し、ダイシングマシン38を用いて図4(e) 
に示すように基板の表面からダイシングを行う。このと
き切断面には接着性領域33Sが残っているため、素子
領域は良好に保護されている。
Thereafter, the semiconductor integrated circuit board 31 is mounted with the back surface facing down on the fixing sheet 17 mounted on the suction stage, and the semiconductor integrated circuit board 31 is placed on the fixing sheet 17.
4(e) using the dicing machine 38.
Dicing is performed from the surface of the substrate as shown in . At this time, since the adhesive region 33S remains on the cut surface, the element region is well protected.

【0049】この後、図4(f) に示すように、基板
表面の斜め方向から約5秒間紫外線照射を行い、接着性
領域33Sの接着剤を硬化せしめて接着性を低下させる
Thereafter, as shown in FIG. 4(f), the substrate surface is irradiated with ultraviolet rays from an oblique direction for about 5 seconds to harden the adhesive in the adhesive region 33S and reduce its adhesiveness.

【0050】そして図4(g) に示すように、表面保
護シート35の表面に粘着性テープ20を貼着し、この
表面保護シート35を一括して剥離する。
Then, as shown in FIG. 4(g), the adhesive tape 20 is attached to the surface of the surface protection sheet 35, and the surface protection sheet 35 is peeled off all at once.

【0051】そして、この固定シート17上に固定され
た状態で実装ラインに搬送される。そして図4(h) 
に示すように、固定シート17を伸ばし、チップ間間隔
を大きくし、さらに図4(i) に示すように、貼着面
すなわち基板の裏面側から再びUV照射を行い、同様に
硬化させ、接着力が低下し、剥離しやすい状態となった
ところで、図4(j) に示すようにコレット21を用
いて1個づつ移送し、リードフレームあるいはテープキ
ャリア等に位置決めし、装着する。
[0051] Then, it is conveyed to the mounting line while being fixed on this fixed sheet 17. And Figure 4(h)
As shown in Figure 4(i), the fixing sheet 17 is stretched to increase the inter-chip spacing, and as shown in Figure 4(i), UV irradiation is performed again from the adhesive side, that is, the back side of the substrate, and the adhesive is cured in the same manner. When the force decreases and it becomes easy to peel off, as shown in FIG. 4(j), the collets 21 are used to transport the pieces one by one, position them on a lead frame or tape carrier, and mount them.

【0052】このようにして形成される半導体集積回路
チップは、素子領域表面が接着剤で汚染されたり、切り
屑が付着したりすることなく、得ることができ、良好な
表面状態を維持することができる。
The semiconductor integrated circuit chip thus formed can be obtained without the surface of the element region being contaminated with adhesive or adhering to chips, and can maintain a good surface condition. Can be done.

【0053】[0053]

【発明の効果】以上説明してきたように、本発明の第1
によれば、半導体集積回路基板の表面に表面保護用のシ
ートを貼着して、裏面側からこのシートを残すように半
導体集積回路基板のみを切断し、半導体集積回路チップ
に分断し、この後このシートを剥離するようにしている
ため、半導体集積回路基板の表面の汚染は低減され、信
頼性の向上を図ることができる。
[Effects of the Invention] As explained above, the first aspect of the present invention
According to the above, a surface protection sheet is pasted on the front surface of a semiconductor integrated circuit board, and only the semiconductor integrated circuit board is cut leaving this sheet from the back side, dividing into semiconductor integrated circuit chips, and then Since this sheet is peeled off, contamination on the surface of the semiconductor integrated circuit board is reduced, and reliability can be improved.

【0054】本発明の第2によれば、切断される領域に
沿って、切断される領域よりもやや大きい領域に選択的
に接着剤層を形成し、この表面保護用のシートを半導体
集積回路基板の表面に貼着しているため、この表面保護
用のシートと共に、半導体集積回路基板を切断した際に
、切断面の近傍は接着剤層によって固着され、半導体基
板の素子領域は、接着剤で表面を汚染されることなく切
断面の側面でのみ表面保護用のシートに固着され、この
接着剤層およびシートによって保護されているため、切
り屑等で汚染されることもない。
According to the second aspect of the present invention, an adhesive layer is selectively formed along the area to be cut in an area slightly larger than the area to be cut, and this surface protection sheet is used as a semiconductor integrated circuit. Since it is attached to the surface of the substrate, when the semiconductor integrated circuit board is cut together with this surface protection sheet, the area near the cut surface is fixed by the adhesive layer, and the element area of the semiconductor substrate is protected by the adhesive layer. Since the cut surface is fixed to the surface protection sheet only on the side surfaces of the cut surface without being contaminated by chips, and is protected by the adhesive layer and the sheet, it is not contaminated with chips or the like.

【0055】本発明の第3によれば、表面保護用のシー
トの裏面全体に紫外線硬化型接着剤を塗布するとともに
このシートの表面に、切断される領域に相当する領域よ
りもやや大きい領域に遮光膜パターンを形成しこの遮光
膜パターンをマスクとして紫外線を照射し、前記シート
の切断される領域を除く領域の紫外線硬化型接着剤を選
択的に硬化させたのちにこのシートを半導体集積回路基
板の表面に貼着するようにしているため、半導体集積回
路基板を切断した際に、切断面の近傍は接着剤層によっ
て固着され、半導体基板の素子領域は、接着剤で表面を
汚染されることなく表面保護用のシートによって保護さ
れているため、切り屑等で汚染されることもない。
According to the third aspect of the present invention, an ultraviolet curing adhesive is applied to the entire back surface of a surface protection sheet, and an area slightly larger than the area to be cut is applied to the surface of the sheet. A light-shielding film pattern is formed, and ultraviolet rays are irradiated using this light-shielding film pattern as a mask to selectively harden the UV-curable adhesive in areas other than the areas to be cut on the sheet, and then this sheet is attached to a semiconductor integrated circuit board. Therefore, when the semiconductor integrated circuit board is cut, the area near the cut surface is fixed by the adhesive layer, and the surface of the element area of the semiconductor board may be contaminated by the adhesive. Since it is protected by a surface protection sheet, there is no chance of contamination with chips or the like.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の第1の実施例の半導体集積回路装置の
切断工程を示す図。
FIG. 1 is a diagram showing a cutting process of a semiconductor integrated circuit device according to a first embodiment of the present invention.

【図2】本発明の第2の実施例の半導体集積回路装置の
切断方法を示す説明図。
FIG. 2 is an explanatory diagram showing a method for cutting a semiconductor integrated circuit device according to a second embodiment of the present invention.

【図3】本発明の第2の実施例の半導体集積回路装置の
切断工程を示す図。
FIG. 3 is a diagram showing a cutting process of a semiconductor integrated circuit device according to a second embodiment of the present invention.

【図4】本発明の第3の実施例の半導体集積回路装置の
切断工程を示す図。
FIG. 4 is a diagram showing a cutting process of a semiconductor integrated circuit device according to a third embodiment of the present invention.

【図5】従来例の半導体集積回路装置の切断工程を示す
図。
FIG. 5 is a diagram showing a cutting process of a conventional semiconductor integrated circuit device.

【符号の説明】[Explanation of symbols]

1  半導体集積回路基板 1C  チップ 2  表面保護シート 3  吸着ステージ 4  薄刃カッター 5  TVカメラ 6  赤外線ランプ 7  固定シート 8  切り屑 9  スクライブライン 10  吸着穴 11  半導体集積回路基板 12  表面保護シート 13  吸着ステージ 15  TVカメラ 16  赤外線ランプ 17  固定シート P  紫外線硬化型接着剤 23  接着剤層 24  切断線 25  表面保護用のシート 31  半導体集積回路基板 32  素子領域 33S  接着性領域 34  切断線 1 Semiconductor integrated circuit board 1C Chip 2 Surface protection sheet 3 Adsorption stage 4 Thin blade cutter 5 TV camera 6 Infrared lamp 7 Fixed sheet 8 Chips 9 Scribe line 10 Suction hole 11 Semiconductor integrated circuit board 12 Surface protection sheet 13 Adsorption stage 15 TV camera 16 Infrared lamp 17 Fixed sheet P UV curing adhesive 23 Adhesive layer 24 Cutting line 25 Surface protection sheet 31 Semiconductor integrated circuit board 32 Element area 33S Adhesive area 34 Cutting line

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】  半導体集積回路基板を複数の半導体集
積回路チップに分断する半導体集積回路装置の製造方法
において半導体集積回路基板の表面に表面保護用のシー
トを貼着するシート貼着工程と、前記表面保護用のシー
トを残すように、前記半導体集積回路基板を、裏面側か
ら切断し、半導体集積回路チップに分断する切断工程と
、前記表面保護用のシートを剥離する剥離工程とを含む
ことを特徴とする半導体集積回路装置の製造方法。
1. A method for manufacturing a semiconductor integrated circuit device in which a semiconductor integrated circuit board is divided into a plurality of semiconductor integrated circuit chips, a sheet adhering step of adhering a surface protection sheet to the surface of the semiconductor integrated circuit board; A cutting step of cutting the semiconductor integrated circuit board from the back side and dividing it into semiconductor integrated circuit chips so as to leave a surface protection sheet; and a peeling step of peeling off the surface protection sheet. A method for manufacturing a semiconductor integrated circuit device characterized by:
【請求項2】  前記シート貼着工程は紫外線硬化型接
着剤を介して表面保護用のシートを貼着する工程であり
、前記剥離工程に先立ち、前記半導体集積回路基板の表
面に紫外線を照射し、前記紫外線硬化型接着剤を硬化さ
せ、前記シートを剥離しやすい状態にする紫外線照射工
程を含むことを特徴とする請求項(1) 記載の半導体
集積回路装置の製造方法。
2. The sheet adhering step is a step of adhering a surface protection sheet via an ultraviolet curable adhesive, and prior to the peeling step, the surface of the semiconductor integrated circuit board is irradiated with ultraviolet rays. 2. The method of manufacturing a semiconductor integrated circuit device according to claim 1, further comprising an ultraviolet irradiation step of curing the ultraviolet curable adhesive and making the sheet easy to peel.
【請求項3】  半導体集積回路基板を複数の半導体集
積回路チップに分断する半導体集積回路装置の製造方法
において切断工程で切断される領域に沿って前記切断さ
れる領域よりもやや大きい領域に選択的に接着剤層を形
成し、この接着剤層によって半導体集積回路基板の表面
に表面保護用のシートを貼着するシート貼着工程と、前
記表面保護用のシートと共に、前記半導体集積回路基板
を切断し、半導体集積回路チップに分断する切断工程と
、前記表面保護用のシートを剥離する剥離工程とを含む
ことを特徴とする半導体集積回路装置の製造方法。
3. In a method for manufacturing a semiconductor integrated circuit device in which a semiconductor integrated circuit board is divided into a plurality of semiconductor integrated circuit chips, selectively cutting is performed along an area to be cut in a cutting step in an area slightly larger than the area to be cut. a sheet adhering step of forming an adhesive layer on the substrate and adhering a surface protection sheet to the surface of the semiconductor integrated circuit board using the adhesive layer; and cutting the semiconductor integrated circuit board together with the surface protection sheet. A method for manufacturing a semiconductor integrated circuit device, comprising: a cutting step of dividing the semiconductor integrated circuit into chips; and a peeling step of peeling off the surface protection sheet.
【請求項4】  半導体集積回路基板を複数の半導体集
積回路チップに分断する半導体集積回路装置の製造方法
において表面保護用のシートの裏面全体に紫外線硬化型
接着剤を塗布する接着剤塗布工程と、前記シートの表面
に、前記切断工程で切断される領域に相当する領域より
もやや大きい領域に遮光膜パターンを形成しこの遮光膜
パターンをマスクとして紫外線を照射し、前記シートの
切断される領域を除く領域の前記紫外線硬化型接着剤を
選択的に硬化させる紫外線照射工程と、前記シートを半
導体集積回路基板の表面に貼着するシート貼着工程と前
記表面保護用のシートと共に、前記半導体集積回路基板
を切断し、半導体集積回路チップに分断する切断工程と
、前記表面保護用のシートを剥離する剥離工程とを含む
ことを特徴とする半導体集積回路装置の製造方法。
4. A method for manufacturing a semiconductor integrated circuit device in which a semiconductor integrated circuit board is divided into a plurality of semiconductor integrated circuit chips, an adhesive application step of applying an ultraviolet curable adhesive to the entire back surface of a surface protection sheet; A light-shielding film pattern is formed on the surface of the sheet in an area slightly larger than the region to be cut in the cutting step, and ultraviolet rays are irradiated using this light-shielding film pattern as a mask to cut the area of the sheet to be cut. an ultraviolet irradiation step for selectively curing the ultraviolet curable adhesive in the area to be removed; a sheet adhesion step for adhering the sheet to the surface of the semiconductor integrated circuit board; and a surface protection sheet for the semiconductor integrated circuit board. A method for manufacturing a semiconductor integrated circuit device, comprising: a cutting step of cutting a substrate into semiconductor integrated circuit chips; and a peeling step of peeling off the surface protection sheet.
【請求項5】  前記剥離工程に先立ち、前記半導体集
積回路基板の表面に紫外線を照射し、前記紫外線硬化型
接着剤を硬化させ、前記シートを剥離しやすい状態にす
る紫外線照射工程を含むことを特徴とする請求項(4)
 記載の半導体集積回路装置の製造方法。
5. Prior to the peeling step, the method includes an ultraviolet irradiation step of irradiating the surface of the semiconductor integrated circuit board with ultraviolet rays to cure the ultraviolet curable adhesive and make the sheet easy to peel. Characteristic claim (4)
A method of manufacturing the semiconductor integrated circuit device described above.
JP25235891A 1991-03-28 1991-09-30 Method for manufacturing semiconductor integrated circuit device Expired - Fee Related JP3165192B2 (en)

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JP25235891A JP3165192B2 (en) 1991-03-28 1991-09-30 Method for manufacturing semiconductor integrated circuit device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3-64950 1991-03-28
JP6495091 1991-03-28
JP25235891A JP3165192B2 (en) 1991-03-28 1991-09-30 Method for manufacturing semiconductor integrated circuit device

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