JPH04351804A - Dielectric porcelain composite, and ceramic capacitor and thick film capacitor using said composite - Google Patents

Dielectric porcelain composite, and ceramic capacitor and thick film capacitor using said composite

Info

Publication number
JPH04351804A
JPH04351804A JP3126263A JP12626391A JPH04351804A JP H04351804 A JPH04351804 A JP H04351804A JP 3126263 A JP3126263 A JP 3126263A JP 12626391 A JP12626391 A JP 12626391A JP H04351804 A JPH04351804 A JP H04351804A
Authority
JP
Japan
Prior art keywords
dielectric
added
ceramic composition
fired
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3126263A
Other languages
Japanese (ja)
Other versions
JP2630111B2 (en
Inventor
Koji Kawakita
晃司 川北
Ryo Kimura
涼 木村
Seiji Motojima
源島 誠次
Keigo Kodaira
小平 恵吾
Hideyuki Okinaka
秀行 沖中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3126263A priority Critical patent/JP2630111B2/en
Publication of JPH04351804A publication Critical patent/JPH04351804A/en
Application granted granted Critical
Publication of JP2630111B2 publication Critical patent/JP2630111B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To provide a ceramic capacitor or a thick film capacitor using a dielectric porcelain composite having a baking temperature 800 to 1000 deg.C while the composite can be baked in the atmosphere, neutral atmosphere or reduced atmosphere in a short time and having a low dielectric loss at high frequency. CONSTITUTION:A dielectric porcelain composite is provided with the constitution, in which PbO 1.0 to 25.0 molar % and MgO 10.0 to 200.0 molar % or MnO2 1.0 to 15.0 molar % are added to tentative baked powder of a main component dielectric porcelain composite consisting of Pb(Mg1/3Nb2/3)O3, PbTiO3, Pb(Ni1/2W1/2)O3. Further, the dielectric porcelain composite is also provided with the constitution, in which PbO 1.0 to 25.0 molar % and MgO 10.0 to 250.0 molar % are added to tentative baked powder of the main component dielectric porcelain composite, in which MnO2 is added to a three-component lead solid solution of PbTiO3, Pb(Mg1/3 Nb2/3)O3, PbZrO3.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は焼成温度が800〜10
00℃でかつ中性雰囲気中または還元雰囲気中にて短時
間で焼成でき、誘電損失が小さい誘電体磁器組成物およ
びそれを用いたセラミックコンデンサと厚膜コンデンサ
に関するものである。
[Industrial Application Field] The present invention has a firing temperature of 800 to 10
The present invention relates to a dielectric ceramic composition that can be fired in a short time at 00°C in a neutral or reducing atmosphere and has low dielectric loss, and to ceramic capacitors and thick film capacitors using the same.

【0002】0002

【従来の技術】小型化・大容量化が進むセラミックコン
デンサの高誘電率材料としては、チタン酸バリウムを主
成分とする材料が用いられてきた。しかし、この材料を
焼成させるには大気中でかつ焼成温度として1300℃
程度の高温が必要であるため、積層型セラミックコンデ
ンサを作製する場合に、電極材料としては高価な白金あ
るいはパラジウム等の貴金属の使用が不可欠であり、特
に大容量化にともない内部電極材料が原料費を押し上げ
る要因となっていた。
2. Description of the Related Art Materials containing barium titanate as a main component have been used as high dielectric constant materials for ceramic capacitors, which are becoming increasingly smaller and larger in capacity. However, this material must be fired in the atmosphere and at a firing temperature of 1300°C.
Therefore, when manufacturing multilayer ceramic capacitors, it is essential to use expensive noble metals such as platinum or palladium as electrode materials.In particular, as the capacity increases, the cost of raw materials for internal electrode materials increases. This was a factor that pushed up the

【0003】これに対し、近年チタン酸バリウム系材料
に耐還元性をもたせ電極材料として安価な卑金属を用い
て酸素分圧の低い雰囲気中で焼成する方法や、鉛系誘電
体材料と安価な銀を主体とする銀−パラジウム合金の電
極材料とを用いて、1000℃前後の低温で焼成する方
法により積層セラミックコンデンサの低コスト化が図ら
れている。
On the other hand, in recent years, methods have been developed in which barium titanate-based materials are given reduction resistance and are fired in an atmosphere with low oxygen partial pressure using inexpensive base metals as electrode materials, and lead-based dielectric materials and inexpensive silver The cost of multilayer ceramic capacitors has been reduced by using a silver-palladium alloy electrode material mainly composed of silver and palladium and firing at a low temperature of around 1000°C.

【0004】一方、小型化や高信頼性が望まれる電子機
器においては、実装密度の高いハイブリッドIC化が進
められており、従来のチップコンデンサに変わって厚膜
コンデンサに対する要望が高まっている。厚膜コンデン
サを作製するには、低温,短時間焼成が可能な誘電体が
必要であり、このための材料としては主に鉛系誘電体が
用いられる。従って、積層チップコンデンサの大容量化
あるいはコンデンサの厚膜化のいずれにも対応できる低
温焼成が可能な材料として、鉛系誘電体の開発が盛んに
進められている。
On the other hand, in electronic devices where miniaturization and high reliability are desired, hybrid ICs with high packaging density are being used, and there is an increasing demand for thick film capacitors in place of conventional chip capacitors. To manufacture thick film capacitors, a dielectric material that can be fired at low temperatures and in a short time is required, and lead-based dielectric materials are mainly used as the material for this purpose. Therefore, lead-based dielectrics are being actively developed as materials that can be fired at low temperatures and can be used to increase the capacity of multilayer chip capacitors or to increase the thickness of capacitors.

【0005】[0005]

【発明が解決しようとする課題】さて、Pb(Mg1/
3Nb2/3)O3,PbTiO3,Pb(Ni1/2
W1/2)O3系誘電体組成物は、特開昭61−155
249号公報で知られているように、1100℃以下の
大気中で焼成される高誘電率磁器組成物であるが、誘電
率を高め十分緻密な焼成体を得るためには焼成温度にて
数時間保持する必要がある。
[Problem to be solved by the invention] Now, Pb(Mg1/
3Nb2/3)O3,PbTiO3,Pb(Ni1/2
W1/2) O3-based dielectric composition is disclosed in Japanese Patent Application Laid-open No. 61-155.
As known from Publication No. 249, this is a high dielectric constant ceramic composition that is fired in the atmosphere at temperatures below 1100°C. Need to keep time.

【0006】また、PbTiO3,Pb(Mg1/3N
b2/3)O3,PbZrO3にMnO2を添加した低
誘電損失な誘電体磁器組成物は特公昭46−42544
号公報等で知られているように、強誘電率磁器組成物で
あるが、誘電率を高め十分緻密な焼成体を得るためには
1250℃以上の焼成温度にて数時間保持する必要があ
る。そのため誘電体と電極を同時焼成にて形成する場合
、電極材料としては低融点の安価な卑金属が利用できな
い。一方、ハイブリッドIC用の厚膜コンデンサを作製
する場合、低温短時間焼成が不可欠となり、このような
条件下では上記誘電体材料は未焼成となるため所望の特
性が得られないという課題があった。
[0006] Also, PbTiO3, Pb(Mg1/3N
b2/3) A dielectric ceramic composition with low dielectric loss in which MnO2 is added to O3, PbZrO3 is disclosed in Japanese Patent Publication No. 46-42544.
As is known from publications such as the above, it is a ferroelectric ceramic composition, but in order to increase the dielectric constant and obtain a sufficiently dense fired body, it is necessary to hold it at a firing temperature of 1250°C or higher for several hours. . Therefore, when forming the dielectric and the electrode by co-firing, an inexpensive base metal with a low melting point cannot be used as the electrode material. On the other hand, when producing thick film capacitors for hybrid ICs, low-temperature, short-time firing is essential, and under such conditions the dielectric material becomes unfired, making it impossible to obtain the desired characteristics. .

【0007】本発明ではかかる問題に鑑み、Pb(Mg
1/3Nb2/3)O3,PbTiO3,Pb(Ni1
/2W1/2)O3系固容体およびPbTiO3,Pb
(Mg1/3Nb2/3)O3,PbZrO3系固容体
の持つ誘電率を損なわず、中性雰囲気中あるいは還元雰
囲気中にて800〜1000℃で、かつ短時間焼成が可
能でかつ誘電損失の小さい誘電体磁器組成物およびそれ
を用いたセラミックコンデンサと厚膜コンデンサを提供
することを目的とするものである。
In view of this problem, the present invention provides Pb (Mg
1/3Nb2/3)O3,PbTiO3,Pb(Ni1
/2W1/2) O3-based solid and PbTiO3, Pb
(Mg1/3Nb2/3)O3, PbZrO3-based solid medium does not lose its dielectric constant, can be fired at 800 to 1000℃ in a neutral or reducing atmosphere for a short time, and has low dielectric loss. The object of the present invention is to provide a ceramic composition and a ceramic capacitor and a thick film capacitor using the same.

【0008】[0008]

【課題を解決するための手段】上記問題点を解決するた
めに本発明の誘電体磁器組成物は、Pb(Mg1/3N
b2/3)xTiy(Ni1/2W1/2)zO3で表
される磁器組成分(ただしx+y+z=1)において、
Pb(Mg1/3Nb2/3)O3,PbTiO3,P
b(Ni1/2W1/2)O3を頂点とする三角座標で
、下記の[  ]内の数値で表される組成A,B,C,
D,Eを頂点とする五角形の領域内からなる主成分誘電
体磁器組成物の仮焼粉に対して、副成分としてPbOを
1.0〜25.0モル%と、MgOを10.0〜200
.0モル%またはMnO2を1.0〜15.0モル%添
加するという構成を備えたものである。
[Means for Solving the Problems] In order to solve the above problems, the dielectric ceramic composition of the present invention has Pb(Mg1/3N
b2/3) xTiy(Ni1/2W1/2)zO3 In the porcelain composition (x+y+z=1),
Pb(Mg1/3Nb2/3)O3,PbTiO3,P
In triangular coordinates with b(Ni1/2W1/2)O3 as the vertex, the compositions A, B, C, expressed by the numbers in [ ] below,
1.0 to 25.0 mol% of PbO and 10.0 to 25.0 mol% of MgO are added as subcomponents to the calcined powder of the main component dielectric ceramic composition consisting of a pentagonal region with vertices D and E. 200
.. It has a structure in which 0 mol % or 1.0 to 15.0 mol % of MnO2 is added.

【0009】   [Aはx=0.025,y=0.950,z=0.
025    Bはx=0.125,y=0.850,
z=0.025    Cはx=0.600,y=0.
100,z=0.300    Dはx=0.400,
y=0.100,z=0.500    Eはx=0.
025,y=0.900,z=0.075]また、本発
明の誘電体磁器組成物は、PbTix(Mg1/3Nb
2/3)yZrzO3+mMnO2で表される磁器組成
分(ただしx+y+z=1)において、m=0.1〜3
.0wt%の範囲にあり、この範囲内のmの値に対し、
PbTiO3,Pb(Mg1/3Nb2/3)O3,P
bZrO3を頂点とする三角座標で、下記の[  ]内
の数値で表される組成A,B,C,D,E,Fを頂点と
する六角形の領域内からなる主成分誘電体磁器組成物の
仮焼粉に対して、副成分としてPbOを1.0〜25.
0モル%と、MgOを10.0〜250.0モル%添加
するという構成を備えたものである。
[A is x=0.025, y=0.950, z=0.
025 B is x=0.125, y=0.850,
z=0.025 C is x=0.600, y=0.
100, z=0.300 D is x=0.400,
y=0.100, z=0.500 E is x=0.
025, y=0.900, z=0.075] Furthermore, the dielectric ceramic composition of the present invention includes PbTix (Mg1/3Nb
2/3) In the ceramic composition represented by yZrzO3+mMnO2 (however, x+y+z=1), m=0.1 to 3
.. It is in the range of 0 wt%, and for the value of m within this range,
PbTiO3,Pb(Mg1/3Nb2/3)O3,P
A main component dielectric ceramic composition consisting of a hexagonal region with compositions A, B, C, D, E, and F as vertices, represented by the numbers in brackets below in triangular coordinates with bZrO3 as the apex. 1.0 to 25% of PbO was added as a subcomponent to the calcined powder.
0 mol % and MgO is added in an amount of 10.0 to 250.0 mol %.

【0010】   [Aはx=0.250  ,y=0.125  ,
z=0.625    Bはx=0.3125,y=0
.0625,z=0.625    Cはx=0.50
0  ,y=0.0625,z=0.4325    
Dはx=0.500  ,y=0.450  ,z=0
.050    Eはx=0.450  ,y=0.5
00  ,z=0.050    Fはx=0.250
  ,y=0.500  ,z=0.250]
[A is x=0.250, y=0.125,
z=0.625 B is x=0.3125, y=0
.. 0625, z=0.625 C is x=0.50
0, y=0.0625, z=0.4325
D is x=0.500, y=0.450, z=0
.. 050 E is x=0.450, y=0.5
00, z=0.050 F is x=0.250
, y=0.500, z=0.250]

【001
1】
001
1]

【作用】本発明の誘電体磁器組成物においては、ペロブ
スカイト構造を有するPb(Mg1/3Nb2/3)O
3−PbTiO3−Pb(Ni1/2W1/2)O3系
の仮焼粉体に、PbOと、MgOまたはMnO2を添加
するか、あるいはペロブスカイト構造を有するPbTi
O3,Pb(Mg1/3Nb2/3)O3,PbZrO
3,MnO2系の仮焼粉体に、PbOとMgOを添加す
ることにより、PbOとMgOまたはMnO2の共晶組
成を利用し低温で液相を発生させ、またこれらの添加物
がA,B両サイトとに同時に固容することで誘電体への
拡散を円滑に行う。よって添加物による粒界層の形成が
抑制され、かつ誘電率の低下および誘電損失の上昇を防
ぐことができる。従って、中性雰囲気中あるいは還元雰
囲気中にて1000℃以下という低い焼成温度で短時間
に緻密に焼成可能なセラミックコンデンサと厚膜コンデ
ンサが得られることとなる。
[Function] In the dielectric ceramic composition of the present invention, Pb(Mg1/3Nb2/3)O having a perovskite structure
3-PbTiO3-Pb(Ni1/2W1/2)O3-based calcined powder is added with PbO and MgO or MnO2, or PbTi having a perovskite structure is added.
O3, Pb (Mg1/3Nb2/3) O3, PbZrO
3. By adding PbO and MgO to MnO2-based calcined powder, a liquid phase is generated at low temperature by utilizing the eutectic composition of PbO and MgO or MnO2, and these additives By immobilizing at the same time as the site, diffusion into the dielectric material is performed smoothly. Therefore, the formation of grain boundary layers due to additives can be suppressed, and a decrease in dielectric constant and an increase in dielectric loss can be prevented. Therefore, it is possible to obtain a ceramic capacitor and a thick film capacitor that can be fired to a high density in a short time at a low firing temperature of 1000° C. or less in a neutral atmosphere or a reducing atmosphere.

【0012】0012

【実施例】【Example】

(実施例1)以下、本発明の一実施例の誘電体磁器組成
物およびそれを用いたセラミックコンデンサと厚膜コン
デンサについて説明する。
(Example 1) Hereinafter, a dielectric ceramic composition according to an example of the present invention, and a ceramic capacitor and a thick film capacitor using the same will be described.

【0013】まず、出発原料としては化学的に高純度な
PbO,MgO,Nb2O5,TiO2,MnO2を用
いた。これらを純度補正を行った上で所定量を秤量し、
純水を加えメノウ製玉石を用いてボールミルで17時間
混合した。これを吸引ろ過した水分の大半を分離した後
乾燥し、その後ライカイ機で充分解砕した後、粉砕量の
5wt%の純水を加え、直径60mm高さ約50mmの
円柱状に成型圧力500kg/cm2で成型した。これ
をアルミナルツボ中に入れ同質の蓋をし、750〜10
00℃で2時間仮焼した。次に、上記仮焼物をアルミナ
乳鉢で粗砕し、さらにボールミルで17時間粉砕し、吸
引ろ過した後乾燥した。以上の仮焼・粉砕・乾燥を数回
くりかえした。この粉末をX線解析法により解析し、ペ
ロブスカイト相であることを確認した。
First, chemically highly pure PbO, MgO, Nb2O5, TiO2, and MnO2 were used as starting materials. Weigh the specified amount after correcting the purity of these,
Pure water was added and mixed for 17 hours in a ball mill using agate stones. This was filtered by suction, most of the water was separated, and then dried. After that, it was thoroughly crushed in a Raikai machine, and then 5 wt% of pure water was added to the crushed amount, and it was molded into a cylindrical shape with a diameter of 60 mm and a height of about 50 mm at a pressure of 500 kg/ It was molded in cm2. Place this in an aluminum pot and cover with a homogeneous lid.
It was calcined at 00°C for 2 hours. Next, the calcined product was roughly crushed in an alumina mortar, further crushed in a ball mill for 17 hours, filtered under suction, and then dried. The above steps of calcination, crushing, and drying were repeated several times. This powder was analyzed by X-ray analysis and confirmed to be a perovskite phase.

【0014】この誘電体粉末に副成分としてPbOと、
MgOまたはMnO2を添加しライカイ機で混合した後
、ポリビニルアルコール6wt%水溶液を粉体量の6w
t%加え、32メッシュふるいを通して造粒し、成型圧
力500kg/cm2で直径13mm高さ約5mmの円
板状に成型した。次いで、この成型物を大気中600℃
で、1時間保持して脱バインダーした後、マグネシア磁
器容器に入れて同質の蓋をし、雰囲気ベルト炉を用いて
中性雰囲気中または還元雰囲気中で所定温度まで240
0℃/hrsで昇温し、最高温度で10分間保持後、2
400℃/hrsで降温した。
[0014] This dielectric powder contains PbO as an accessory component,
After adding MgO or MnO2 and mixing with a Raikai machine, add 6wt% polyvinyl alcohol aqueous solution to 6w of powder amount.
t% was added, and the mixture was granulated through a 32-mesh sieve, and molded into a disk shape with a diameter of 13 mm and a height of about 5 mm at a molding pressure of 500 kg/cm2. Next, this molded product was heated to 600°C in the atmosphere.
After holding for 1 hour to remove the binder, the container was placed in a magnesia porcelain container, covered with a homogeneous lid, and heated to a predetermined temperature at 240°C in a neutral or reducing atmosphere using an atmospheric belt furnace.
After raising the temperature at 0℃/hrs and holding it at the maximum temperature for 10 minutes,
The temperature was lowered at 400°C/hrs.

【0015】以上のようにして得られた焼成物を厚さ1
mmの円板状に加工し、両面を電極としてCr−Agを
蒸着し、誘電率、tanδを1KHz,1V/mmの電
界下で測定した。
[0015] The fired product obtained as described above has a thickness of 1
It was processed into a disk shape of mm in diameter, Cr-Ag was deposited on both sides as electrodes, and the dielectric constant and tan δ were measured under an electric field of 1 KHz and 1 V/mm.

【0016】下記の(表1)に本実施例の材料組成と、
焼成雰囲気を中性雰囲気である窒素中とした焼成物の誘
電特性および誘電損失を示す。
The following (Table 1) shows the material composition of this example,
The dielectric properties and dielectric loss of the fired product are shown when the firing atmosphere is nitrogen, which is a neutral atmosphere.

【0017】[0017]

【表1】[Table 1]

【0018】また、焼成雰囲気を10−8atm以上の
酸素分圧を有する窒素−水素混合ガス中とした場合の誘
電体磁器組成物の誘電特性および誘電損失を下記の(表
2)に示す。
Table 2 below shows the dielectric properties and dielectric loss of the dielectric ceramic composition when the firing atmosphere is a nitrogen-hydrogen mixed gas having an oxygen partial pressure of 10 -8 atm or more.

【0019】[0019]

【表2】[Table 2]

【0020】上記(表1),(表2)に示すように、実
施例によれば、800〜1000℃短時間焼成にもかか
わらず、また様々な雰囲気焼成においても、高誘電率の
緻密な焼成体が得られ、また助剤にMgOあるいはMn
O2を添加することで、中性雰囲気あるいは還元雰囲気
焼成においても、低い誘電損失を有する焼成体が得られ
るものである。
As shown in Tables 1 and 2 above, according to the examples, high-permittivity dense particles were obtained despite short-time firing at 800 to 1000°C and under various atmosphere firings. A fired body is obtained, and MgO or Mn is used as an auxiliary agent.
By adding O2, a fired product having low dielectric loss can be obtained even when fired in a neutral atmosphere or a reducing atmosphere.

【0021】図1は本発明の主成分の組成範囲を、Pb
(Mg1/3Nb2/3)O3,PbTiO3,Pb(
Ni1/2W1/2)O3を主成分とする三角組成図中
に示したものであるが、ここで、本発明において特許請
求の範囲を、Pb(Mg1/3Nb2/3)xTiy(
Ni1/2W1/2)zO3で表される磁器組成分(た
だしx+y+z=1)において、Pb(Mg1/3Nb
2/3)O3,PbTiO3,Pb(Ni1/2W1/
2)O3を頂点とする三角座標で、下記の[  ]内の
数値で表される組成A,B,C,D,Eを頂点とする五
角形の領域内からなる主成分誘電体磁器組成物の仮焼粉
に対して、副成分としてPbOを1.0〜25.0モル
%と、MgOを10.0〜200.0モル%またはMn
O2を1.0〜15.0モル%添加することを特徴とす
る誘電体磁器組成物、   [Aはx=0.025,y=0.950,z=0.
025    Bはx=0.125,y=0.850,
z=0.025    Cはx=0.600,y=0.
100,z=0.300    Dはx=0.400,
y=0.100,z=0.500    Eはx=0.
025,y=0.900,z=0.075]と具体的に
限定した理由を述べる。(表1),(表2)の比較例に
示すように、発明の範囲外の組成物においては、助剤の
添加量が少ない組成および800℃より低い焼成温度で
は焼成が不十分となり緻密な焼成体が得られず、助剤の
添加量の多い組成および1000℃より高い焼成温度で
は、助剤の誘電体への反応により誘電率が大幅に低下し
、また、誘電損失が大きくなる難点を有している。また
、x,y,zが限定の範囲外の組成物では高い誘電率お
よび低い誘電損失が得られない難点を有している。以上
のように、限定範囲外の組成では具体的には、本焼成条
件で焼成体の誘電率が2000以下、あるいは誘電損失
が1.5%以上となり、コンデンサとしての所望の特性
が得られないためである。
FIG. 1 shows the composition range of the main component of the present invention.
(Mg1/3Nb2/3)O3,PbTiO3,Pb(
Although this is shown in the triangular composition diagram whose main component is Ni1/2W1/2)O3, the scope of claims in the present invention is defined as Pb(Mg1/3Nb2/3)xTiy(
In the ceramic composition represented by Ni1/2W1/2)zO3 (where x+y+z=1), Pb(Mg1/3Nb
2/3) O3, PbTiO3, Pb(Ni1/2W1/
2) Composition A, B, C, D, E represented by the numerical values in brackets below in triangular coordinates with O3 as the vertex. Based on the calcined powder, 1.0 to 25.0 mol% of PbO and 10.0 to 200.0 mol% of MgO or Mn are added as subcomponents.
A dielectric ceramic composition characterized in that 1.0 to 15.0 mol% of O2 is added [A is x=0.025, y=0.950, z=0.
025 B is x=0.125, y=0.850,
z=0.025 C is x=0.600, y=0.
100, z=0.300 D is x=0.400,
y=0.100, z=0.500 E is x=0.
025, y=0.900, z=0.075], the reason for the specific limitation will be described. As shown in the comparative examples (Table 1) and (Table 2), in compositions outside the scope of the invention, compositions with a small amount of auxiliary additives and firing temperatures lower than 800°C result in insufficient firing, resulting in dense particles. If a fired body cannot be obtained, and if the composition contains a large amount of additives and the firing temperature is higher than 1000℃, the dielectric constant will decrease significantly due to the reaction of the additive with the dielectric, and the dielectric loss will increase. have. Furthermore, a composition in which x, y, and z are outside the specified ranges has the disadvantage that a high dielectric constant and low dielectric loss cannot be obtained. As mentioned above, if the composition is outside the limited range, the dielectric constant of the fired product will be less than 2000 or the dielectric loss will be more than 1.5% under the main firing conditions, making it impossible to obtain the desired characteristics as a capacitor. It's for a reason.

【0022】(実施例2)上記実施例1と同様に仮焼・
粉砕・乾燥した誘電体粉末に、副成分としてPbOとM
gOまたはMnO2を添加し、ボールミルにて湿式混合
した後乾燥し、エチルセルロースを主成分とする樹脂を
溶媒で溶かしたビヒクルを加え、三段ロールにて混練し
誘電体ペーストを作製した。一方、純度96%のアルミ
ナ基板上に2×2mm2の形状を有する厚膜コンデンサ
を形成するために、下部電極として銅電極を印刷し乾燥
させた。次に、誘電体層として上記誘電体ペーストを厚
み0.050〜0.060mmになるように二度印刷乾
燥を行い、さらに上部電極として下部電極と同じ銅電極
を印刷し乾燥することにより、電極−誘電体−電極の三
層構造の印刷厚膜を形成し、ベルト炉を用いて最高温度
800〜1000℃,保持時間10分間窒素中で焼成し
た。 このようにして得られた厚膜コンデンサの誘電率、ta
nδを1KHz,1V/mmの電界下で測定した。(表
3)に本実施例の材料組成と、窒素中900℃で焼成し
た焼成物の誘電特性および誘電損失を示す。
(Example 2) Similar to Example 1 above, calcination and
PbO and M are added as subcomponents to the crushed and dried dielectric powder.
gO or MnO2 was added, wet mixed in a ball mill, and then dried. A vehicle in which a resin containing ethyl cellulose as a main component was dissolved in a solvent was added, and the mixture was kneaded with a three-stage roll to prepare a dielectric paste. On the other hand, in order to form a thick film capacitor having a shape of 2 x 2 mm2 on an alumina substrate with a purity of 96%, a copper electrode was printed as a lower electrode and dried. Next, the dielectric paste was printed and dried twice to a thickness of 0.050 to 0.060 mm as a dielectric layer, and a copper electrode, which was the same as the lower electrode, was printed and dried as an upper electrode. A printed thick film having a three-layer structure of -dielectric material-electrode was formed and fired in nitrogen using a belt furnace at a maximum temperature of 800 to 1000°C for a holding time of 10 minutes. The dielectric constant of the thick film capacitor obtained in this way, ta
nδ was measured at 1 KHz under an electric field of 1 V/mm. (Table 3) shows the material composition of this example, and the dielectric properties and dielectric loss of the fired product fired at 900° C. in nitrogen.

【0023】[0023]

【表3】[Table 3]

【0024】上記(表3)に示すように、本実施例の材
料組成にかかる焼成物は、短時間低温焼成にもかかわら
ず、緻密な焼成体からなる高誘電率でかつ低い誘電損失
を有する厚膜コンデンサが得られるものである。
As shown in Table 3 above, the fired product of the material composition of this example is a dense fired product with a high dielectric constant and low dielectric loss despite being fired at a low temperature for a short time. A thick film capacitor is obtained.

【0025】特許請求の範囲を限定した理由は、実施例
1と同様に、(表3)の比較例に示すように、限定範囲
外の組成では、本焼成条件で焼成体の誘電率が1000
以下、あるいは誘電損失が1.0%以上となり、厚膜コ
ンデンサとしての所望の特性が得られないためである。
The reason for limiting the scope of the claims is that, as in Example 1, as shown in the comparative example in Table 3, for compositions outside the limited range, the dielectric constant of the fired product is 1000 under the main firing conditions.
This is because the dielectric loss is less than 1.0% or more than 1.0%, making it impossible to obtain desired characteristics as a thick film capacitor.

【0026】本実施例では窒素中にて焼成が可能である
ことを示したが、アルゴン,ヘリウム等の中性雰囲気中
でも焼成が可能であることが容易に推察される。
In this example, it was shown that firing was possible in nitrogen, but it is easily inferred that firing is also possible in a neutral atmosphere such as argon or helium.

【0027】なお、本実施例で用いられる電極としては
、中性雰囲気中あるいは還元雰囲気中にて800〜10
00℃で焼成可能な電極が適宜選択され、使用されるも
のである。
[0027] The electrode used in this example has a temperature of 800 to 10 in a neutral atmosphere or a reducing atmosphere.
An electrode that can be fired at 00°C is appropriately selected and used.

【0028】(実施例3)以下本発明の他の実施例の誘
電体磁器組成物およびそれを用いたセラミックコンデン
サと厚膜コンデンサを説明する。
(Example 3) A dielectric ceramic composition according to another example of the present invention, and a ceramic capacitor and a thick film capacitor using the same will be described below.

【0029】まず、出発原料としては化学的に高純度な
PbO,MgO,Nb2O5,TiO2,ZrO2,M
nO2を用いた。これらを純度補正を行った上で所定量
を秤量し、純水を加えメノウ製玉石を用いてボールミル
で17時間混合した。これを吸引ろ過して水分の大半を
分離した後乾燥し、その後ライカイ機で充分解砕した後
、粉砕量の5wt%の純水を加え、直径60mm高さ約
50mmの円柱状に成型圧力500kg/cm2で成型
した。これをアルミナルツボ中に入れ同質の蓋をし、7
50〜1150℃で2時間仮焼した。次に、上記仮焼物
をアルミナ乳鉢で粗砕し、さらにボールミルで17時間
粉砕し、吸引ろ過した後乾燥した。以上の仮焼・粉砕・
乾燥を数回くりかえした。この粉末をX線解析法により
解析し、ペロブスカイト相であることを確認した。
First, as starting materials, chemically highly pure PbO, MgO, Nb2O5, TiO2, ZrO2, M
nO2 was used. After correcting the purity of these, a predetermined amount was weighed, pure water was added, and the mixture was mixed for 17 hours in a ball mill using agate cobblestones. This is filtered by suction to remove most of the moisture, dried, and then thoroughly crushed using a Raikai machine. 5wt% of pure water is added to the crushed amount, and the mixture is molded into a cylinder with a diameter of 60mm and a height of approximately 50mm under a pressure of 500kg. /cm2. Place this in an aluminum pot, cover with a homogeneous lid, and
Calcining was performed at 50 to 1150°C for 2 hours. Next, the calcined product was roughly crushed in an alumina mortar, further crushed in a ball mill for 17 hours, filtered under suction, and then dried. Calcining, crushing,
Drying was repeated several times. This powder was analyzed by X-ray analysis and confirmed to be a perovskite phase.

【0030】この誘電体粉末に副成分としてPbOと、
MgOを添加しライカイ機で混合した後、ポリビニルア
ルコール6wt%水溶液を粉体量の6wt%加え、32
メッシュふるいを通して造粒し、成型圧力500kg/
cm2で直径13mm高さ約5mmの円板状に成型した
。次いで、この成型物を大気中600℃で、1時間保持
して脱バインダーした後、マグネシア磁器容器に入れて
同質の蓋をし、雰囲気ベルト炉を用いて大気中,中性雰
囲気中または還元雰囲気中で所定温度まで2400℃/
hrsで昇温し、最高温度で10分間保持後、2400
℃/hrsで降温した。
[0030] This dielectric powder contains PbO as an accessory component,
After adding MgO and mixing with a Raikai machine, 6 wt% aqueous solution of polyvinyl alcohol was added to 6 wt% of the powder amount.
Granulated through a mesh sieve and molded at a pressure of 500 kg/
It was molded into a disk shape with a diameter of 13 mm and a height of about 5 mm. Next, this molded product is held in the atmosphere at 600°C for 1 hour to remove the binder, then placed in a magnesia porcelain container with a homogeneous lid, and heated in the atmosphere, neutral atmosphere, or reducing atmosphere using an atmospheric belt furnace. up to a specified temperature of 2400℃/
After raising the temperature at hrs and holding it at the maximum temperature for 10 minutes, it was heated to 2400 hrs.
The temperature was lowered at °C/hrs.

【0031】以上のようにして得られた焼成物を厚さ1
mmの円板状に加工し、両面を電極としてCr−Agを
蒸着し、誘電率、tanδを1MHz,1V/mmの電
界下で測定した。
[0031] The fired product obtained as described above has a thickness of 1
It was processed into a disk shape of mm in diameter, Cr-Ag was deposited on both sides as electrodes, and the dielectric constant and tan δ were measured under an electric field of 1 MHz and 1 V/mm.

【0032】下記の(表4)に本実施例の材料組成と、
大気中での焼成物の誘電特性,誘電損失を示す。
The following (Table 4) shows the material composition of this example,
The dielectric properties and dielectric loss of the fired product in the atmosphere are shown.

【0033】[0033]

【表4】[Table 4]

【0034】また、焼成雰囲気を中性雰囲気である窒素
中とした焼成物および焼成雰囲気を10−8atm以上
の酸素分圧を有する窒素−水素混合ガス中とした場合の
誘電体磁器組成物の誘電特性および誘電損失を下記の(
表5),(表6)に示す。
[0034] In addition, the dielectric properties of the dielectric ceramic composition are also evaluated when the firing atmosphere is nitrogen, which is a neutral atmosphere, and when the firing atmosphere is a nitrogen-hydrogen mixed gas having an oxygen partial pressure of 10-8 atm or more. The characteristics and dielectric loss are shown below (
Table 5) and (Table 6).

【0035】[0035]

【表5】[Table 5]

【0036】[0036]

【表6】[Table 6]

【0037】上記(表4)に示すように、実施例によれ
ば、800〜1000℃短時間焼成にもかかわらず、助
剤にPbOとMgOあるいはMnO2を添加することで
、大気中において、高い誘電率で低誘電損失の緻密な焼
成体が得られるものである。また、大気中焼成における
特許請求の範囲内の組成物は、(表5),(表6)の中
性雰囲気,還元性雰囲気による焼成においても上記の特
徴を持った焼結体が得られた。
As shown in the above (Table 4), according to the examples, despite short-time firing at 800 to 1000°C, by adding PbO and MgO or MnO2 to the auxiliary agents, high A dense fired body with a low dielectric constant and low dielectric loss can be obtained. Furthermore, for the composition within the scope of the patent when fired in the air, a sintered body having the above characteristics was obtained even when fired in a neutral atmosphere or a reducing atmosphere as shown in Tables 5 and 6. .

【0038】図2は本発明の主成分の組成範囲を、Pb
TiO3,Pb(Mg1/3Nb2/3)O3,Pb(
Ni1/2W1/2)O3を主成分とする三角組成図中
に示したものであるが、ここで、本発明において特許請
求の範囲を、PbTix(Mg1/3Nb2/3)yZ
rzO3+mMnO2で表される磁器組成分(ただしx
+y+z=1)において、m=0.1〜3.0wt%の
範囲にあり、この範囲内のmの値に対し、PbTiO3
,Pb(Mg1/3Nb2/3)O3,Pb(Ni1/
2W1/2)O3を頂点とする三角座標で、下記の[ 
 ]内の数値で表される組成A,B,C,D,E,Fを
頂点とする六角形の領域内からなる主成分誘電体磁器組
成物の仮焼粉に対して、副成分としてPbOを1.0〜
25.0モル%とMgOを10.0〜250.0モル%
添加することを特徴とする誘電体磁器組成物、   [Aはx=0.250  ,y=0.125  ,
z=0.625    Bはx=0.3125,y=0
.0625,z=0.625    Cはx=0.50
0  ,y=0.0625,z=0.4325    
Dはx=0.500  ,y=0.450  ,z=0
.050    Eはx=0.450  ,y=0.5
00  ,z=0.050    Fはx=0.250
  ,y=0.500  ,z=0.250]と具体的
に限定した理由を述べる。(表4),(表5),(表6
)の比較例に示すように、発明の範囲外の組成物におい
ては、助剤の添加量が少ない組成および800℃より低
い焼成温度では焼成が不十分となり緻密な焼成体が得ら
れず、助剤の添加量の多い組成および1000℃より高
い焼成温度では、助剤の誘電体への反応により誘電率が
低下し、また、誘電損失が大きくなる難点を有している
。また、x,y,zが限定の範囲外の組成物では高い誘
電率および低い誘電損失が得られない難点を有している
。以上のように、限定範囲外の組成では具体的には、本
焼成条件で焼成体の誘電率が200以下、誘電損失が1
.0%以上となり、コンデンサとしての所望の特性が得
られないためである。
FIG. 2 shows the composition range of the main component of the present invention.
TiO3,Pb(Mg1/3Nb2/3)O3,Pb(
It is shown in the triangular composition diagram whose main component is PbTix(Mg1/3Nb2/3)O3.
Porcelain composition expressed as rzO3+mMnO2 (where x
+y+z=1), m is in the range of 0.1 to 3.0 wt%, and for the value of m within this range, PbTiO3
, Pb(Mg1/3Nb2/3)O3, Pb(Ni1/
2W1/2) In triangular coordinates with O3 as the vertex, the following [
] PbO as a subcomponent for the calcined powder of a dielectric ceramic composition as a main component consisting of a hexagonal area with compositions A, B, C, D, E, and F as vertices, represented by the numerical values in 1.0~
25.0 mol% and MgO 10.0 to 250.0 mol%
A dielectric ceramic composition characterized in that [A is x=0.250, y=0.125,
z=0.625 B is x=0.3125, y=0
.. 0625, z=0.625 C is x=0.50
0, y=0.0625, z=0.4325
D is x=0.500, y=0.450, z=0
.. 050 E is x=0.450, y=0.5
00, z=0.050 F is x=0.250
, y=0.500, z=0.250], the reason for the specific limitation will be described. (Table 4), (Table 5), (Table 6
), in compositions outside the scope of the invention, compositions in which the amount of additives added and firing temperatures lower than 800°C result in insufficient firing and a dense fired body cannot be obtained. Compositions in which a large amount of additives are added and firing temperatures higher than 1000° C. have the drawback that the dielectric constant decreases due to the reaction of the additives with the dielectric material, and dielectric loss increases. Furthermore, a composition in which x, y, and z are outside the specified ranges has the disadvantage that a high dielectric constant and low dielectric loss cannot be obtained. As mentioned above, if the composition is outside the limited range, specifically, the dielectric constant of the fired body is 200 or less and the dielectric loss is 1 under the main firing conditions.
.. This is because it becomes 0% or more and the desired characteristics as a capacitor cannot be obtained.

【0039】(実施例4)上記実施例3と同様に仮焼・
粉砕・乾燥した誘電体粉末に、副成分としてPbOとM
gOまたはMnO2を添加し、ボールミルにて湿式混合
した後乾燥し、エチルセルロースを主成分とする樹脂を
溶媒で溶かしたビヒクルを加え、三段ロールにて混練し
誘電体ペーストを作製した。一方、純度96%のアルミ
ナ基板上に2×2mm2の形状を有する厚膜コンデンサ
を形成するために、下部電極として電極ペーストを印刷
し乾燥させた。次に、誘電体層として上記誘電体ペース
トを厚み0.050〜0.060mmになるように二度
印刷乾燥を行い、さらに上部電極として下部電極と同じ
電極ペーストを印刷し乾燥することにより、電極−誘電
体−電極の三層構造の印刷厚膜を形成し、ベルト炉を用
いて最高温度800〜1000℃,保持時間10分間焼
成した。このようにして得られた厚膜コンデンサの誘電
率、tanδを1KHz,1V/mmの電界下で測定し
た。(表7)に本実施例の材料組成と、大気中900℃
で焼成した焼成物の誘電特性,誘電損失を示す。
(Example 4) Calcination and
PbO and M are added as subcomponents to the crushed and dried dielectric powder.
gO or MnO2 was added, wet mixed in a ball mill, and then dried. A vehicle in which a resin containing ethyl cellulose as a main component was dissolved in a solvent was added, and the mixture was kneaded with a three-stage roll to prepare a dielectric paste. On the other hand, in order to form a thick film capacitor having a shape of 2 x 2 mm2 on an alumina substrate with a purity of 96%, an electrode paste was printed and dried as a lower electrode. Next, the dielectric paste was printed and dried twice to a thickness of 0.050 to 0.060 mm as a dielectric layer, and the same electrode paste as the lower electrode was printed and dried as an upper electrode. A printed thick film having a three-layer structure of -dielectric material-electrode was formed and fired using a belt furnace at a maximum temperature of 800 to 1000°C for a holding time of 10 minutes. The dielectric constant, tan δ, of the thick film capacitor thus obtained was measured under an electric field of 1 KHz and 1 V/mm. (Table 7) shows the material composition of this example and the temperature at 900°C in the atmosphere.
The dielectric properties and dielectric loss of the fired product are shown below.

【0040】[0040]

【表7】[Table 7]

【0041】上記(表7)に示すように、本実施例の材
料組成にかかる焼成物は、短時間低温焼成にもかかわら
ず、緻密な焼成体からなる高誘電率でかつ低い誘電損失
を有する厚膜コンデンサが得られるものである。
As shown in Table 7 above, the fired product of the material composition of this example is a dense fired product with a high dielectric constant and low dielectric loss despite being fired at a low temperature for a short time. A thick film capacitor is obtained.

【0042】また(表8)に本実施例の材料組成と、窒
素中900℃で焼成した焼成物の誘電特性,誘電損失を
示す。
Table 8 also shows the material composition of this example, and the dielectric properties and dielectric loss of the fired product fired at 900° C. in nitrogen.

【0043】[0043]

【表8】[Table 8]

【0044】上記(表8)に示すように、本実施例の材
料組成にかかる焼成物は、短時間低温焼成にもかかわら
ず、緻密な焼成体からなる高誘電率でかつ低い誘電損失
を有する厚膜コンデンサが得られるものである。
As shown in Table 8 above, the fired product of the material composition of this example is a dense fired product with a high dielectric constant and low dielectric loss despite being fired at a low temperature for a short time. A thick film capacitor is obtained.

【0045】特許請求の範囲を限定した理由は、実施例
1と同様に、(表7),(表8)の比較例に示すように
、限定範囲外の組成では、本焼成条件で焼成体の誘電率
が200以下、あるいは誘電損失が1.0%以上となり
、厚膜コンデンサとしての所望の特性が得られないため
である。
[0045] The reason for limiting the scope of the claims is that, as in Example 1, as shown in the comparative examples (Table 7) and (Table 8), with a composition outside the limited range, the fired product cannot be produced under the main firing conditions. This is because the dielectric constant of the capacitor is 200 or less, or the dielectric loss is 1.0% or more, making it impossible to obtain the desired characteristics as a thick film capacitor.

【0046】本実施例では窒素中にて焼成が可能である
ことを示したが、アルゴン,ヘリウム等の中性雰囲気中
でも焼成が可能であることが容易に推察される。
[0046] In this example, it was shown that firing is possible in nitrogen, but it is easily inferred that firing is also possible in a neutral atmosphere such as argon or helium.

【0047】なお、本実施例で用いられる電極としては
、大気中,中性雰囲気中あるいは還元雰囲気中にて80
0〜1000℃で焼成可能な電極が適宜選択され、使用
されるものである。
[0047] The electrodes used in this example were tested at 80°C in air, neutral atmosphere, or reducing atmosphere.
An electrode that can be fired at 0 to 1000°C is appropriately selected and used.

【0048】[0048]

【発明の効果】以上述べたように本発明によれば、80
0〜1000℃の温度にて短時間でかつ中性雰囲気中あ
るいは還元雰囲気中においても焼成可能な高誘電率を有
し、かつ誘電損失の小さい積層セラミックコンデンサお
よび厚膜コンデンサを提供し得る誘電体磁器組成物を実
現できるという優れた効果を発揮するものである。
[Effects of the Invention] As described above, according to the present invention, 80
A dielectric material that has a high dielectric constant that can be fired at a temperature of 0 to 1000°C in a short time and even in a neutral atmosphere or a reducing atmosphere, and that can provide multilayer ceramic capacitors and thick film capacitors with low dielectric loss. This exhibits the excellent effect of realizing a porcelain composition.

【図面の簡単な説明】[Brief explanation of the drawing]

Claims (1)

【特許請求の範囲】 【請求項1】Pb(Mg1/3Nb2/3)O3を含む
鉛系誘電体磁器組成を仮焼し粉砕して得られた主成分誘
電体磁器組成物に対して、副成分としてPbOと、Mg
OまたはMnO2を添加することを特徴とする誘電体磁
器組成物。 【請求項2】Pb(Mg1/3Nb2/3)xTiy(
Ni1/2W1/2)zO3で表される磁器組成分(た
だしx+y+z=1)において、Pb(Mg1/3Nb
2/3)O3,PbTiO3,Pb(Ni1/2W1/
2)O3を頂点とする三角座標で、下記の[]内の数値
で表される組成A,B,C,D,Eを頂点とする五角形
の領域内からなる主成分誘電体磁器組成物の仮焼粉に対
して、副成分としてPbOを1.0〜25.0モル%と
、MgOを10.0〜200.0モル%またはMnO2
を1.0〜15.0モル%添加することを特徴とする誘
電体磁器組成物。   [Aはx=0.025,y=0.950,z=0.
025    Bはx=0.125,y=0.850,
z=0.025    Cはx=0.600,y=0.
100,z=0.300    Dはx=0.400,
y=0.100,z=0.500    Eはx=0.
025,y=0.900,z=0.075]【請求項3
】PbTix(Mg1/3Nb2/3)yZrzO3+
mMnO2で表される磁器組成分(ただしx+y+z=
1)において、m=0.1〜3.0wt%の範囲にあり
、この範囲内のmの値に対し、PbTiO3,Pb(M
g1/3Nb2/3)O3,PbZrO3を頂点とする
三角座標で、下記の[  ]内の数値で表される組成A
,B,C,D,E,Fを頂点とする六角形の領域内から
なる主成分誘電体磁器組成物の仮焼粉に対して、副成分
としてPbOを1.0〜25.0モル%と、MgOを1
0.0〜250.0モル%添加することを特徴とする誘
電体磁器組成物。   [Aはx=0.250  ,y=0.125  ,
z=0.625    Bはx=0.3125,y=0
.0625,z=0.625    Cはx=0.50
0  ,y=0.0625,z=0.4325    
Dはx=0.500  ,y=0.450  ,z=0
.050    Eはx=0.450  ,y=0.5
00  ,z=0.050    Fはx=0.250
  ,y=0.500  ,z=0.250]【請求項
4】請求項2または3記載の誘電体磁器組成物からなる
誘電体層と、中性雰囲気中あるいは還元雰囲気中にて8
00〜1000℃で焼成可能な電極とで構成されたこと
を特徴とするセラミックコンデンサ。 【請求項5】セラミック基板上に、請求項2または3記
載の誘電体磁器組成物からなる誘電体層と、800〜1
000℃で焼成可能な電極とから構成されたことを特徴
とする厚膜コンデンサ。
[Scope of Claims] [Claim 1] A main component dielectric ceramic composition obtained by calcining and pulverizing a lead-based dielectric ceramic composition containing Pb(Mg1/3Nb2/3)O3, PbO and Mg as components
A dielectric ceramic composition characterized by adding O or MnO2. Claim 2: Pb(Mg1/3Nb2/3)xTiy(
In the ceramic composition represented by Ni1/2W1/2)zO3 (where x+y+z=1), Pb(Mg1/3Nb
2/3) O3, PbTiO3, Pb(Ni1/2W1/
2) Composition A, B, C, D, E represented by the numerical values in square brackets below in triangular coordinates with O3 as the vertex. Based on the calcined powder, 1.0 to 25.0 mol% of PbO and 10.0 to 200.0 mol% of MgO or MnO2 are added as subcomponents.
A dielectric ceramic composition characterized in that 1.0 to 15.0 mol% of is added. [A is x=0.025, y=0.950, z=0.
025 B is x=0.125, y=0.850,
z=0.025 C is x=0.600, y=0.
100, z=0.300 D is x=0.400,
y=0.100, z=0.500 E is x=0.
025, y=0.900, z=0.075] [Claim 3
]PbTix(Mg1/3Nb2/3)yZrzO3+
Porcelain composition expressed in mMnO2 (where x+y+z=
1), m is in the range of 0.1 to 3.0 wt%, and for the value of m within this range, PbTiO3, Pb(M
Composition A expressed by the numbers in [ ] below in triangular coordinates with g1/3Nb2/3)O3, PbZrO3 as the apex
, B, C, D, E, and F as the vertices of the calcined powder of the dielectric ceramic composition as the main component, 1.0 to 25.0 mol% of PbO is added as a subcomponent. and 1 MgO
A dielectric ceramic composition characterized in that it is added in an amount of 0.0 to 250.0 mol%. [A is x=0.250, y=0.125,
z=0.625 B is x=0.3125, y=0
.. 0625, z=0.625 C is x=0.50
0, y=0.0625, z=0.4325
D is x=0.500, y=0.450, z=0
.. 050 E is x=0.450, y=0.5
00, z=0.050 F is x=0.250
, y=0.500, z=0.250] [Claim 4] A dielectric layer made of the dielectric ceramic composition according to claim 2 or 3, and 8.
A ceramic capacitor comprising an electrode that can be fired at a temperature of 00 to 1000°C. 5. A dielectric layer comprising the dielectric ceramic composition according to claim 2 or 3 on a ceramic substrate;
A thick film capacitor comprising an electrode that can be fired at 000°C.
JP3126263A 1991-05-29 1991-05-29 Dielectric ceramic composition, and ceramic and thick film capacitors using the same Expired - Fee Related JP2630111B2 (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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JP2630111B2 JP2630111B2 (en) 1997-07-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980040840A (en) * 1996-11-29 1998-08-17 조희재 Dielectric Ceramics Composition for Low Temperature Sintering

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029750A (en) * 1988-06-27 1990-01-12 Tdk Corp Ceramic composition having high dielectric constant
JPH02157155A (en) * 1988-12-07 1990-06-15 Matsushita Electric Ind Co Ltd Production of dielectric ceramics composition of high permittivity

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029750A (en) * 1988-06-27 1990-01-12 Tdk Corp Ceramic composition having high dielectric constant
JPH02157155A (en) * 1988-12-07 1990-06-15 Matsushita Electric Ind Co Ltd Production of dielectric ceramics composition of high permittivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980040840A (en) * 1996-11-29 1998-08-17 조희재 Dielectric Ceramics Composition for Low Temperature Sintering

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