JP2906530B2 - Dielectric porcelain composition and capacitor - Google Patents

Dielectric porcelain composition and capacitor

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Publication number
JP2906530B2
JP2906530B2 JP2035128A JP3512890A JP2906530B2 JP 2906530 B2 JP2906530 B2 JP 2906530B2 JP 2035128 A JP2035128 A JP 2035128A JP 3512890 A JP3512890 A JP 3512890A JP 2906530 B2 JP2906530 B2 JP 2906530B2
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JP
Japan
Prior art keywords
dielectric
composition
fired
capacitor
porcelain composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2035128A
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Japanese (ja)
Other versions
JPH03238707A (en
Inventor
晃司 川北
涼 木村
秀行 沖中
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Description

【発明の詳細な説明】 産業上の利用分野 本発明は焼成温度が800〜1000℃で、かつ中性雰囲気
中または還元雰囲気中にて短時間で焼成でき、高い抵抗
率を有する誘電体磁器組成物およびコンデンサに関する
ものである。
Description: TECHNICAL FIELD The present invention relates to a dielectric ceramic composition having a high resistivity, which can be fired in a short time in a neutral atmosphere or a reducing atmosphere at a firing temperature of 800 to 1000 ° C. It relates to an object and a capacitor.

従来の技術 小型化・大容量化が進むセラミックコンデンサの高誘
電率材料としては、チタン酸バリウムを主成分とする材
料が用いられてきた。しかし、この材料を焼成させるに
は大気中で、かつ焼成温度として1300℃程度の高温が必
要であるため、積層型セラミックコンデンサを作製する
場合に、電極材料としては高価な白金あるいはパラジウ
ム等の貴金属の使用が不可欠であり、特に大容量化に伴
い内部電極材料が原料費を押し上げる要因となってい
た。
2. Description of the Related Art Barium titanate-based materials have been used as high dielectric constant materials for ceramic capacitors, which are being miniaturized and increased in capacity. However, firing this material requires a high temperature of about 1300 ° C in the air and a firing temperature.Therefore, when manufacturing a multilayer ceramic capacitor, an expensive noble metal such as platinum or palladium is used as an electrode material. It is indispensable to use the material, and in particular, the internal electrode material has increased the raw material cost with the increase in capacity.

これに対し、近年チタン酸バリウム系材料に耐還元性
を持たせ、電極材料として安価な卑金属を用いて酸素分
圧の低い雰囲気中で焼成する方法や、鉛系誘電体材料と
安価な銀を主体とする銀−パラジウム合金の電極材料と
を用いて、1000℃前後の低温で焼成する方法により、積
層セラミックコンデンサの低コスト化が図られている。
On the other hand, in recent years, barium titanate-based materials have been given reduction resistance, and inexpensive base metals have been used as electrode materials and fired in an atmosphere with a low oxygen partial pressure, or lead-based dielectric materials and inexpensive silver have been used. The cost of the multilayer ceramic capacitor is reduced by a method of firing at a low temperature of about 1000 ° C. using a silver-palladium alloy electrode material as a main component.

一方、小型化や高信頼性が望まれる電子機器において
は、実装密度の高いハイブリッドIC化が進められてお
り、従来のチップコンデンサに代って厚膜コンデンサに
対する要望が高まっている。この厚膜コンデンサを作製
するには、低温,短時間焼成が可能な誘電体が必要であ
り、このための材料としては主に鉛系誘電体が用いられ
る。従って、積層セラミックコンデンサの大容量化ある
いはコンデンサの厚膜化のいずれにも対応できる低温焼
成が可能な材料として、鉛系誘電体の開発が盛んに進め
られている。
On the other hand, in electronic devices for which miniaturization and high reliability are desired, hybrid ICs having a high mounting density are being promoted, and demand for thick film capacitors in place of conventional chip capacitors is increasing. To manufacture this thick film capacitor, a dielectric that can be fired at a low temperature for a short time is required, and a lead-based dielectric is mainly used as a material for this purpose. Accordingly, lead-based dielectrics have been actively developed as a material capable of being fired at a low temperature, which can be used for both increasing the capacity of a multilayer ceramic capacitor and increasing the thickness of a capacitor.

発明が解決しようとする課題 さて、(Pb1.00Baa)(Mg1/3Nb2/3)O3+a, (Pb1.00Baa)TiO3+a,(Pb1.00Baa)(Ni1/21/2)O
3+a 系誘電体組成物は、特開昭62−123061号公報で知られて
いるように、1100℃以下の低酸素雰囲気中で焼成される
誘電率磁器組成物であるが、誘電率を高め十分緻密な焼
成体を得るためには焼成温度にて数時間保持する必要が
ある。一方、ハイブリッドIC用の厚膜コンデンサを作製
する場合、低温短時間焼成が不可欠となり、このような
条件下では上記誘電体材料は未焼成となるため、所望の
特性が得られないという問題があった。
Problems to be Solved by the Invention Now, (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a , (Pb 1.00 Ba a ) TiO 3 + a , (Pb 1.00 Ba a ) (Ni 1 / 2 W 1/2 ) O
The 3 + a- based dielectric composition is a dielectric ceramic composition that is fired in a low oxygen atmosphere at 1100 ° C. or lower, as is known from Japanese Patent Application Laid-Open No. 62-123061. In order to obtain a high and sufficiently dense fired body, it is necessary to hold at a firing temperature for several hours. On the other hand, when manufacturing a thick film capacitor for a hybrid IC, low-temperature and short-time firing is indispensable, and under such conditions, the dielectric material is not fired, so that there is a problem that desired characteristics cannot be obtained. Was.

本発明ではかかる問題に鑑み、 (Pb1.00Baa)(Mg1/3Nb2/3)O3+a, (Pb1.00Baa)TiO3+a,(Pb1.00Baa)(Ni1/21/2)O
3+a 系固容体の持つ高い誘電率を損なわず、中性雰囲気中あ
るいは還元雰囲気中にて800〜1000℃で、かつ短時間焼
成が可能な誘電体磁器組成物およびそれを用いたセラミ
ックコンデンサまたは厚膜コンデンサを提供することを
目的とするものである。
In view of this problem, in the present invention, (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a , (Pb 1.00 Ba a ) TiO 3 + a , (Pb 1.00 Ba a ) (Ni 1 / 2 W 1/2) O
Dielectric ceramic composition that can be fired at 800-1000 ° C in a neutral atmosphere or reducing atmosphere for a short time without impairing the high dielectric constant of the 3 + a- based solid volume, and a ceramic capacitor using the same Another object is to provide a thick film capacitor.

課題を解決するための手段 上記問題点を解決するために本発明の誘電体磁器組成
物は、 (Pb1.00Baa)(Mg1/3Nb2/3xTiy(Ni1/21/2zO3+a で表される磁器組成物(ただし、x+y+z=1)にお
いて、 0.001≦a≦0.250 の範囲にあり、この範囲内のaの値に対し、 (Pb1.00Baa)(Mg1/3Nb2/3)O3+a, (Pb1.00Baa)TiO3+a,(Pb1.00Baa)(Ni1/21/2)O
3+a を頂点とする三角座標で、下記の[ ]内の数値で表さ
れる組成A,B,C,D,Eを頂点とする五角形の領域内からな
る主成分誘電体磁器組成物の仮焼粉に対して、PbOを1.0
〜25.0モル%、およびNiOを1.0〜15.0モル%あるいはWO
3を1.0〜15.0モル%添加するという構成を備えたもので
ある。
Means for Solving the Problems To solve the above problems, the dielectric porcelain composition of the present invention comprises (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) x Ti y (Ni 1/2 W 1/2 ) In the porcelain composition represented by z O 3 + a (where x + y + z = 1), it is in the range of 0.001 ≦ a ≦ 0.250, and for the value of a in this range, (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a , (Pb 1.00 Ba a ) TiO 3 + a , (Pb 1.00 Ba a ) (Ni 1/2 W 1/2 ) O
In the triangular coordinates with 3 + a as the apex, the composition of the main component dielectric porcelain composition consisting of a pentagonal region with the vertices of the compositions A, B, C, D, and E represented by numerical values in [] below PbO 1.0 against calcined powder
~ 25.0 mol%, and 1.0 ~ 15.0 mol% of NiO or WO
3 is added in an amount of 1.0 to 15.0 mol%.

作用 すなわち、本発明の特許請求の範囲の組成物において
は、ペロブスカイト構成を有する (Pb1.00Baa)(Mg1/3Nb2/3)O3+a− (Pb1.00Baa)TiO3+a−(Pb1.00Baa)(Ni1/21/2)O
3+a 系の仮焼粉体にPbO、およびNiOあるいはWO3を添加する
ことにより、PbOとNiOあるいはWO3の共晶組成を利用し
低温で液相を発生させ、またこれらの添加物がA,B両サ
イトに同時に固溶することで誘電体への拡散を円滑に行
え、添加物による粒界層の形成が抑制されることによっ
て誘電率の低下を防ぎ、中性雰囲気中あるいは還元雰囲
気中にて1000℃以下という低い焼成温度で短時間に緻密
に焼成し、かつ高い抵抗率を有する大容量のセラミック
コンデンサあるいは厚膜コンデンサが得られることとな
る。
Action That is, in the composition of the present invention, (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a − (Pb 1.00 Ba a ) TiO 3+ having a perovskite structure a − (Pb 1.00 Ba a ) (Ni 1/2 W 1/2 ) O
By adding PbO, NiO or WO 3 to the 3 + a- based calcined powder, a liquid phase is generated at a low temperature by utilizing the eutectic composition of PbO and NiO or WO 3 , and these additives are used. Simultaneous solid solution at both A and B sites facilitates diffusion into the dielectric, suppresses the formation of grain boundary layers due to additives, prevents a decrease in the dielectric constant, and is used in a neutral atmosphere or a reducing atmosphere. It is possible to obtain a large-capacity ceramic capacitor or a thick-film capacitor having a high firing rate and a high density at a low firing temperature of 1000 ° C. or less.

実施例 以下、本発明の実施例を示す。Examples Hereinafter, examples of the present invention will be described.

<実施例1> まず、出発原料としては化学的に高純度なPbO,BaCO3,
MgO,Nb2O5,TiO2,NiO,WO3を用いた。これらを純度補正を
行った上で所定量を秤量し、純水を加えメノウ製玉石を
用いてボールミルで17時間混合した。これを吸引ろ過し
て水分の大半を分離した後乾燥し、その後ライカイ機で
充分解砕した後、粉砕量の5wt%の純水を加え、直径60m
m,高さ約50mmの円柱状に成型圧力500kg/cm2で成型し
た。これをアルミナルツボ中に入れ同質の蓋をし、750
〜1000℃で2時間仮焼した。次に、上記仮焼物をアルミ
ナ乳鉢で粗砕し、さらにボールミルで17時間粉砕し、吸
引ろ過した後乾燥した。以上の仮焼・粉砕・乾燥を数回
繰り返した。この粉末をX線解析法により解析し、ペロ
ブスカイト相であることを確認した。
<Example 1> First, as a starting material, PbO, BaCO 3 ,
MgO, Nb 2 O 5 , TiO 2 , NiO, WO 3 were used. After correcting the purity, a predetermined amount was weighed, pure water was added, and the mixture was mixed with a ball made of agate using a ball mill for 17 hours. This is suction-filtered to separate most of the water, dried and then charged and crushed with a raikai machine.
It was molded into a cylindrical shape having a height of about 50 mm and a molding pressure of 500 kg / cm 2 . Put this in an aluminum crucible, cover with the same quality, 750
Calcination was performed at ~ 1000 ° C for 2 hours. Next, the calcined product was roughly crushed in an alumina mortar, further crushed in a ball mill for 17 hours, suction-filtered, and dried. The above calcination, pulverization, and drying were repeated several times. The powder was analyzed by X-ray analysis to confirm that it was a perovskite phase.

この誘電体粉末に副成分としてPbOとNiOあるいはWO3
を添加し、ライカイ機で混合した後、ポリビニルアルコ
ール6wt%水溶液を粉体量の6wt%加え、32メッシュふる
いを通して造粒し、成型圧力500kg/cm2で直径13mm,高さ
約5mmの円板状に成型した。次いで、この成型物を大気
中600℃で、1時間保持して脱バインダーした後、マグ
ネシア磁器容器に入れて同質の蓋をし、雰囲気ベルト炉
を用いて中性雰囲気中あるいは還元雰囲気中で所定温度
まで2400℃/hrsで昇温し、最高温度で10分間保持後、24
00℃/hrsで降温した。
PbO and NiO or WO 3
Was added and mixed in a chaser mill, a polyvinyl alcohol 6 wt% aqueous solution was added 6 wt% of the powder weight, it was granulated through a 32 mesh sieve, diameter 13mm at a molding pressure of 500 kg / cm 2, a disc of height of about 5mm It was molded into a shape. Then, after holding the molded product at 600 ° C. in the air for 1 hour to remove the binder, put it in a magnesia porcelain container, cover it with the same quality, and use the atmosphere belt furnace in a neutral atmosphere or in a reducing atmosphere. Raise the temperature to 2400 ° C / hrs, hold at the maximum temperature for 10 minutes,
The temperature dropped at 00 ° C / hrs.

以上のようにして得られた焼成物を厚さ1mmの円板状
に加工し、両面に電極としてCr−Agを蒸着し、誘電率,t
anδを1KHz、1V/mmの電界下で測定した。また、抵抗率
は試料に30Vの電圧を印加後1分の値を求めた。
The fired product obtained as described above was processed into a disk shape having a thickness of 1 mm, and Cr-Ag was deposited on both surfaces as electrodes, and the dielectric constant, t
anδ was measured under an electric field of 1 KHz and 1 V / mm. In addition, the resistivity was determined as a value of one minute after applying a voltage of 30 V to the sample.

下記の<表1>に本発明の材料組成と、焼成雰囲気を
中性雰囲気である窒素中とした焼成物の誘電特性および
抵抗率を示す。また、焼成雰囲気を10-8atm以上の酸素
分圧を有する窒素−水素混合ガス中とした場合の焼成物
の誘電特性および抵抗率を下記の<表2>に示す。
Table 1 below shows the material composition of the present invention and the dielectric properties and resistivity of the fired product in a neutral atmosphere of nitrogen as the firing atmosphere. The dielectric properties and resistivity of the fired product when the firing atmosphere was a nitrogen-hydrogen mixed gas having an oxygen partial pressure of 10 -8 atm or more are shown in Table 2 below.

上記<表1>,<表2>に示すように、本発明の材料
組成にかかる焼成物は、800〜1000℃短時間焼成にもか
かわらず、また様々な雰囲気焼成においても、高誘電率
の緻密な焼成体が得られ、またバリウムの添加により、
中性雰囲気あるいは還元雰囲気焼成においても、高い抵
抗率を有する焼成体が得られた。
As shown in the above <Table 1> and <Table 2>, the fired product according to the material composition of the present invention has a high dielectric constant despite firing at 800 to 1000 ° C. for a short time and firing in various atmospheres. A dense fired body is obtained, and by adding barium,
A fired body having high resistivity was obtained even in firing in a neutral atmosphere or a reducing atmosphere.

第1図には本発明の主成分の組成範囲を、 (Pb1.00Baa)(Mg1/3Nb2/3)O3+a, (Pb1.00Baa)TiO3+a,(Pb1.00Baa)(Ni1/21/2)O
3+a を主成分とする三角組成図中に示した。
FIG. 1 shows the composition ranges of the main components of the present invention: (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a , (Pb 1.00 Ba a ) TiO 3 + a , (Pb 1.00 Ba a ) (Ni 1/2 W 1/2 ) O
This is shown in the triangular composition diagram containing 3 + a as a main component.

ここで、本発明において特許請求の範囲を、 (Pb1.00Baa)(Mg1/3Nb2/3xTiy(Ni1/21/2zO3+a で表される磁器組成物(ただし、x+y+z=1)にお
いて、 0.001≦a≦0.250 の範囲にあり、この範囲内のaの値に対し、 (Pb1.00Baa)(Mg1/3Nb2/3)O3+a, (Pb1.00Baa)TiO3+a,(Pb1.00Baa)(Ni1/21/2)O
3+a を頂点とする三角座標で、下記の[ ]内の数値で表さ
れる組成A,B,C,D,Eを頂点とする五角形の領域内からな
る主成分誘電体磁器組成物の仮焼粉に対して、PbOを1.0
〜25.0モル%、およびNiOを1.0〜15.0モル%あるいはWO
3を1.0〜15.0モル%添加することを特徴とする誘電体磁
器組成物、 と具体的に限定したのは、<表1>,<表2>の比較例
に示すように、発明の範囲外の組成物においては、助剤
の添加量が少ない組成および800℃より低い焼成温度で
は焼成が不十分となり、緻密な焼成体が得られず、1000
℃より高い焼成温度では、助剤の誘電体への反応によ
り、誘電率が大幅に低下するためである。また、aが0.
001より小さいと、焼成体の抵抗率が低く、aが0.250を
超える大きさでは、誘電率の大幅な低下を招き、さらに
x,y,zが限定の範囲外の組成物では高い誘電率が得られ
ない難点を有しているためである。
Here, in the present invention, the claims are expressed as (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) x Ti y (Ni 1/2 W 1/2 ) z O 3 + a. In the porcelain composition (however, x + y + z = 1), it is in the range of 0.001 ≦ a ≦ 0.250, and for the value of a in this range, (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a , (Pb 1.00 Ba a ) TiO 3 + a , (Pb 1.00 Ba a ) (Ni 1/2 W 1/2 ) O
In the triangular coordinates with 3 + a as the apex, the composition of the main component dielectric porcelain composition consisting of a pentagonal region with the vertices of the compositions A, B, C, D, and E represented by numerical values in [] below PbO 1.0 against calcined powder
~ 25.0 mol%, and 1.0 ~ 15.0 mol% of NiO or WO
3 , a dielectric ceramic composition characterized by adding 1.0 to 15.0 mol%, Specifically, as shown in Comparative Examples of <Table 1> and <Table 2>, in the compositions outside the scope of the invention, the composition in which the amount of the auxiliary agent was small and the calcination temperature lower than 800 ° C. At the temperature, firing becomes insufficient, a dense fired body cannot be obtained, and 1000
At a sintering temperature higher than ℃, the dielectric constant is greatly reduced due to the reaction of the auxiliary with the dielectric. Also, a is 0.
When it is smaller than 001, the resistivity of the fired body is low, and when a exceeds 0.250, the dielectric constant is greatly reduced, and
This is because a composition in which x, y, and z are out of the limited range has a problem that a high dielectric constant cannot be obtained.

そして、限定範囲外の組成では、具体的には本焼成条
件の焼成体の誘電率が3000以下、あるいは焼成体の抵抗
率が1010cm・Ω以下となり、コンデンサとしての所望の
特性が得られない。
Then, in the composition outside the limited range, the following permittivity of the sintered body of the present sintering conditions specifically 3000, or the resistivity of the sintered body becomes less 10 10 cm · Omega, to obtain desired characteristics as a capacitor Absent.

<実施例2> 上記実施例1と同様に仮焼・粉砕・乾燥した誘電体粉
末に、副成分としてPbOとNiOあるいはWO3を添加し、ボ
ールミルにて湿式混合した後乾燥し、エチルセルロース
を主成分とする樹脂を溶媒で溶かしたビヒクルを加え、
三段ロールにて混練し誘電体ペーストを作製した。一
方、純度96%のアルミナ基板上に2×2mm2の形状を有す
る厚膜コンデンサを形成するために、下部電極として銅
電極を印刷し乾燥させた。次に、誘電体層として上記誘
電体ペーストを厚み50〜60μmになるように二度印刷乾
燥を行い、さらに上部電極として下部電極と同じ銅電極
を印刷し乾燥することにより、電極−誘電体−電極の三
層構造の印刷厚膜を形成し、ベルト炉を用いて最高温度
800〜1000℃、保持時間10分間窒素中で焼成した。この
ようにして得られた厚膜コンデンサの誘電率tanδを1KH
z,1V/mmの電界下で測定した。また、抵抗率は試料に30V
の電圧を印加後1分の値を求めた。下記の<表3>に本
発明の材料組成と、窒素中900℃で焼成した焼成物の誘
電特性を示す。
The dielectric powder was calcined, pulverized and dried as <Example 2> Example 1, was added PbO, NiO or WO 3 as a secondary component, and dried after wet mixing in a ball mill, a main ethylcellulose A vehicle in which a resin as a component is dissolved in a solvent is added,
The mixture was kneaded with a three-stage roll to prepare a dielectric paste. On the other hand, in order to form a thick film capacitor having a shape of 2 × 2 mm 2 on an alumina substrate having a purity of 96%, a copper electrode was printed as a lower electrode and dried. Next, the above-mentioned dielectric paste is twice printed and dried as a dielectric layer so as to have a thickness of 50 to 60 μm, and the same copper electrode as the lower electrode is printed and dried as an upper electrode, thereby obtaining an electrode-dielectric- Form a printed thick film with a three-layer structure of electrodes and use a belt furnace to reach the maximum temperature.
Calcination was performed in nitrogen at 800 to 1000 ° C. for 10 minutes. The dielectric constant tanδ of the thick film capacitor thus obtained is 1 KH
The measurement was performed under an electric field of z, 1 V / mm. The resistivity is 30V for the sample.
1 minute after the voltage was applied. Table 3 below shows the material composition of the present invention and the dielectric properties of the fired product fired at 900 ° C. in nitrogen.

上記<表3>に示すように、本発明の材料組成にかか
る焼成物は、低温短時間焼成にもかかわらず、緻密な焼
成体からなる高い抵抗率を有する高容量の厚膜コンデン
サが得られた。
As shown in Table 3 above, in the fired product according to the material composition of the present invention, a high-capacity thick-film capacitor having a high resistivity and having a high resistivity made of a dense fired body can be obtained despite firing at a low temperature for a short time. Was.

特許請求の範囲を限定した理由は、実施例1と同様
に、<表3>の比較例に示すように、限定範囲外の組成
では、本焼成条件で焼成体の誘電率が2500以下、あるい
は焼成体の抵抗率が1010cm・Ω以下となり、厚膜コンデ
ンサとしての所望の特性が得られないためである。
The reason for limiting the scope of the claims is that, as in the case of Example 1, as shown in the comparative example of Table 3, with a composition outside the limited range, the dielectric constant of the fired body under the firing conditions is 2500 or less, or This is because the resistivity of the fired body becomes 10 10 cm · Ω or less, and desired characteristics as a thick film capacitor cannot be obtained.

本実施例では窒素中にて焼成が可能であることを示し
たが、アルゴン,ヘリウム等の中性雰囲気中でも焼成が
可能であることが容易に推察される。
In this example, it was shown that firing was possible in nitrogen. However, it is easily presumed that firing is possible even in a neutral atmosphere such as argon or helium.

なお、本発明で用いられる電極としては、中性雰囲気
中あるいは還元雰囲気中にて800〜1000℃で焼成可能な
電極が適宜選択され、使用されるものである。
As the electrode used in the present invention, an electrode that can be fired at 800 to 1000 ° C. in a neutral atmosphere or a reducing atmosphere is appropriately selected and used.

発明の効果 以上述べたように本発明は、 (Pb1.00Baa)(Mg1/3Nb2/3xTiy(Ni1/21/2zO3+a で表される磁器組成物(ただし、x+y+z=1)にお
いて、 0.001≦a≦0.250 の範囲にあり、この範囲内のaの値に対し、 (Pb1.00Baa)(Mg1/3Nb2/3)O3+a, (Pb1.00Baa)TiO3+a,(Pb1.00Baa)(Ni1/21/2)O
3+a を頂点とする三角座標で、下記の[ ]内の数値で表さ
れる組成A,B,C,D,Eを頂点とする五角形の領域内からな
る主成分誘電体磁器組成物の仮焼粉に対して、PbOを1.0
〜25.0モル%、およびNiOを1.0〜15.0モル%あるいはWO
3を1.0〜15.0モル%添加することを特徴とする誘電体磁
器組成物、 とすることにより、800〜1000℃の温度にて短時間でか
つ中性雰囲気中あるいは還元雰囲気中においても焼成可
能な高誘電率を有し、かつ抵抗率の高い積層セラミック
コンデンサおよび厚膜コンデンサを提供し得るという優
れた効果を発揮するものである。
Effect of the Invention As described above, the present invention is represented by (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) x Ti y (Ni 1/2 W 1/2 ) z O 3 + a. In the porcelain composition (however, x + y + z = 1), it is in the range of 0.001 ≦ a ≦ 0.250, and for the value of a in this range, (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a , (Pb 1.00 Ba a ) TiO 3 + a , (Pb 1.00 Ba a ) (Ni 1/2 W 1/2 ) O
In the triangular coordinates with 3 + a as the apex, the composition of the main component dielectric porcelain composition consisting of a pentagonal region with the vertices of the compositions A, B, C, D, and E represented by numerical values in [] below PbO 1.0 against calcined powder
~ 25.0 mol%, and 1.0 ~ 15.0 mol% of NiO or WO
3 , a dielectric ceramic composition characterized by adding 1.0 to 15.0 mol%, By having a high dielectric constant that can be fired at a temperature of 800 to 1000 ° C. in a short time and also in a neutral atmosphere or a reducing atmosphere, and a multilayer ceramic capacitor and a thick film capacitor having a high resistivity, It has an excellent effect that it can be provided.

【図面の簡単な説明】 第1図は本発明の組成範囲を示す (Pb1.00Baa)(Mg1/3Nb2/3)O3+a, (Pb1.00Baa)TiO3+a,(Pb1.00Baa)(Ni1/21/2)O
3+a を主成分とする三角組成図である。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows the composition range of the present invention (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a , (Pb 1.00 Ba a ) TiO 3 + a , (Pb 1.00 Ba a ) (Ni 1/2 W 1/2 ) O
It is a triangular composition diagram containing 3 + a as a main component.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−123061(JP,A) 特開 昭63−319241(JP,A) (58)調査した分野(Int.Cl.6,DB名) H01B 3/12 H01G 4/12 C04B 35/00 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-61-223061 (JP, A) JP-A-63-319241 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01B 3/12 H01G 4/12 C04B 35/00

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】(Pb1.00Baa)(Mg1/3Nb2/3xTiy(Ni1/2
1/2zO3+aで表される磁器組成物(ただし、x+y+
z=1)において、 0.001≦a≦0.250 の範囲にあり、この範囲内のaの値に対し、 (Pb1.00Baa)(Mg1/3Nb2/3)O3+a, (Pb1.00Baa)TiO3+a, (Pb1.00Baa)(Ni1/21/2)O3+aを頂点とする三角座
標で、下記の[ ]内の数値で表される組成A,B,C,D,E
を頂点とする五角形の領域内からなる主成分誘電体磁器
組成物の仮焼粉に対して、PbOを1.0〜25.0モル%、およ
びNiOを1.0〜15.0モル%添加することを特徴とする誘電
体磁器組成物。
(1) (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) x Ti y (Ni 1/2
W 1/2 ) z O 3 + a porcelain composition (where x + y +
z = 1), it is in the range of 0.001 ≦ a ≦ 0.250, and for the value of a in this range, (Pb 1.00 Ba a ) (Mg 1/3 Nb 2/3 ) O 3 + a , (Pb 1.00 Ba a) TiO 3 + a, (Pb 1.00 Ba a) (Ni 1/2 W 1/2) O 3 + a triangular coordinate whose vertices, the composition a represented by numerical values in the following [], B, C, D, E
A dielectric material characterized by adding 1.0 to 25.0 mol% of PbO and 1.0 to 15.0 mol% of NiO to a calcined powder of a main component dielectric porcelain composition comprising a pentagonal region having vertexes Porcelain composition.
【請求項2】請求項1記載の誘電体磁器組成物を用い、
中性雰囲気中あるいは還元雰囲気中にて800〜1000℃で
焼成可能な電極とで構成されたことを特徴とするセラミ
ックコンデンサ。
2. Use of the dielectric porcelain composition according to claim 1,
A ceramic capacitor comprising: an electrode that can be fired at 800 to 1000 ° C. in a neutral atmosphere or a reducing atmosphere.
【請求項3】セラミック基板上に、請求項1記載の誘電
体磁器組成物からなる誘電体層と800〜1000℃で焼成可
能な電極とを設けて構成されたことを特徴とする厚膜コ
ンデンサ。
3. A thick film capacitor comprising: a ceramic substrate; and a dielectric layer comprising the dielectric ceramic composition according to claim 1 and an electrode which can be fired at 800 to 1000 ° C. .
JP2035128A 1990-02-15 1990-02-15 Dielectric porcelain composition and capacitor Expired - Fee Related JP2906530B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2035128A JP2906530B2 (en) 1990-02-15 1990-02-15 Dielectric porcelain composition and capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2035128A JP2906530B2 (en) 1990-02-15 1990-02-15 Dielectric porcelain composition and capacitor

Publications (2)

Publication Number Publication Date
JPH03238707A JPH03238707A (en) 1991-10-24
JP2906530B2 true JP2906530B2 (en) 1999-06-21

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Country Link
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