JPH04350938A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04350938A JPH04350938A JP12416891A JP12416891A JPH04350938A JP H04350938 A JPH04350938 A JP H04350938A JP 12416891 A JP12416891 A JP 12416891A JP 12416891 A JP12416891 A JP 12416891A JP H04350938 A JPH04350938 A JP H04350938A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- film
- titanium
- oxygen
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010949 copper Substances 0.000 claims abstract description 64
- 229910052802 copper Inorganic materials 0.000 claims abstract description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000010936 titanium Substances 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 25
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 22
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 abstract description 16
- 229910001069 Ti alloy Inorganic materials 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- -1 SOG Chemical compound 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052681 coesite Inorganic materials 0.000 description 12
- 229910052906 cristobalite Inorganic materials 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 229910052682 stishovite Inorganic materials 0.000 description 12
- 229910052905 tridymite Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- XQCUWCZUYXJXRL-UHFFFAOYSA-N copper dioxosilane Chemical compound [Si](=O)=O.[Cu] XQCUWCZUYXJXRL-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体装置の製造方法
に関し、更に詳しくは、半導体装置に形成される銅配線
の酸化防止方法に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for preventing oxidation of copper wiring formed in a semiconductor device.
【０００２】0002
【従来の技術】近年、ＵＬＳＩの高集積化に伴い、電極
配線は微細化傾向にある。電極配線材料としてはアルミ
ニウムあるいはアルミニウム系合金が多用されてきたが
、配線の線幅が減少するにつれて、エレクトロマイグレ
ーションが厳しく、信頼性を保証することが難しくなっ
てきている。そこで、アルミニウムに代る配線材料とし
てモリブデン（Ｍｏ），タングステン（Ｗ）などの高融
点金属が試されているが、その抵抗はバルクでアルミニ
ウムの２倍以上と高く、薄膜ではさらに高い。従ってエ
レクトロマイグレーションに強く、低抵抗な材料が求め
られている。そこで、アルミニウムに代わる配線材料と
して銅（Ｃｕ）を用いることが考えられる。銅は、低抵
抗でエレクトロマイグレーションに強く、微細デバイス
への形成を可能にする。2. Description of the Related Art In recent years, as ULSI becomes highly integrated, electrode wiring tends to become finer. Aluminum or aluminum-based alloys have often been used as electrode wiring materials, but as the line width of the wiring decreases, electromigration becomes severe and it becomes difficult to guarantee reliability. Therefore, high melting point metals such as molybdenum (Mo) and tungsten (W) are being tried as wiring materials in place of aluminum, but their resistance in bulk is more than twice that of aluminum, and even higher in thin films. Therefore, there is a need for materials that are resistant to electromigration and have low resistance. Therefore, it is conceivable to use copper (Cu) as a wiring material in place of aluminum. Copper has low resistance and is resistant to electromigration, allowing it to be formed into microscopic devices.
【０００３】しかしながら、銅配線がこれまでにデバイ
スに適用されなかった理由は、Ｃｕが酸素を数％でも含
む雰囲気において、２００℃程度の温度で酸化されるた
めであった。即ち、ウエハプロセスにおいては、ＣＶＤ
法による絶縁膜形成・アニール等、Ｃｕ膜が高温で酸素
雰囲気に晒される工程を経るため、そこで酸化されてし
まうという問題を生じていた。例えば、Ｃｕ配線形成後
に絶縁膜としてＣＶＤ法によりＳｉＯ２膜を形成する場
合には、ウエハは例えばＳｉＨ４＋Ｎ２Ｏガス中で基板
温度３００℃〜４００℃に晒される。このとき、Ｃｕは
反応ガスに含まれる酸素によってＣｕは酸化される。ま
た、Ｃｕ配線形成後にアニールを行なう場合は、通常の
電気炉でＮ２を流し４００℃〜７００℃で行なわれるが
、炉内に存在する微量の残留酸素やＳｉＯ２膜中の酸素
（Ｏ）でＣｕは酸化されてしまう。Ｃｕは、Ａｌと異な
り表面に安定な酸化膜を作らないため、表面が酸素と反
応すると膜中に酸素が拡散し、酸化銅となって電気抵抗
は急激に上昇し配線として実用に適さないものとなって
しまう。However, the reason why copper wiring has not been applied to devices so far is that Cu is oxidized at a temperature of about 200° C. in an atmosphere containing even a few percent of oxygen. That is, in the wafer process, CVD
Since the Cu film is exposed to an oxygen atmosphere at high temperature during steps such as forming an insulating film using a method and annealing, a problem has arisen in that the Cu film is oxidized. For example, when forming an SiO2 film as an insulating film by CVD after forming Cu wiring, the wafer is exposed to a substrate temperature of 300°C to 400°C in SiH4+N2O gas, for example. At this time, Cu is oxidized by oxygen contained in the reaction gas. In addition, when annealing is performed after forming Cu wiring, it is carried out at 400°C to 700°C by flowing N2 in a normal electric furnace, but Cu will be oxidized. Unlike Al, Cu does not form a stable oxide film on its surface, so when the surface reacts with oxygen, oxygen diffuses into the film and becomes copper oxide, causing a rapid increase in electrical resistance, making it unsuitable for practical use as wiring. It becomes.
【０００４】特開昭６３−２９９２５０号公報記載の従
来技術は、Ｃｕ配線上にシリコンを堆積させ、酸素雰囲
気中で熱処理を施して銅−二酸化シリコン（Ｃｕ−Ｓｉ
Ｏ２）合金とする方法であり、Ｃｕ配線の酸化の防止を
図ったものである。[0004] The conventional technique described in JP-A-63-299250 deposits silicon on Cu wiring and heat-treats it in an oxygen atmosphere to form copper-silicon dioxide (Cu-Si).
This is a method of forming an O2) alloy, and is intended to prevent oxidation of Cu wiring.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このよ
うな従来技術を用いても、Ｃｕ配線中にＳｉＯ２が含ま
れる構造となることや、Ｃｕ配線上に堆積させたシリコ
ンを酸素雰囲気中で熱処理するため、Ｃｕは酸素と反応
する機会が多くなり、完全にＣｕの酸化を防止し得るも
のでなかった。そのため、Ｃｕ配線の有効な酸化防止方
法が要望されていた。[Problems to be Solved by the Invention] However, even if such conventional technology is used, the structure may include SiO2 in the Cu wiring, or the silicon deposited on the Cu wiring may be heat-treated in an oxygen atmosphere. Therefore, Cu has many chances to react with oxygen, and oxidation of Cu cannot be completely prevented. Therefore, an effective method for preventing oxidation of Cu wiring has been desired.
【０００６】本発明は、このような従来の問題点に着目
して創案されたものであって、Ｃｕ配線の酸化が防止さ
れる半導体装置の製造方法を得んとするものである。[0006] The present invention was devised by paying attention to such conventional problems, and aims to provide a method for manufacturing a semiconductor device in which oxidation of Cu wiring can be prevented.
【０００７】[0007]
【課題を解決するための手段】そこで、本発明は、下地
基板上に形成された銅配線表面に銅（Ｃｕ）−チタン（
Ｔｉ）系合金膜を形成する工程と、前記銅（Ｃｕ）−チ
タン（Ｔｉ）系合金膜が形成された銅配線上に、酸素（
Ｏ）を構成成分とする絶縁膜を形成する工程とを備えた
ことを、その解決方法としている。[Means for Solving the Problem] Therefore, the present invention provides copper (Cu)-titanium (
The step of forming a Ti)-based alloy film and the step of forming an oxygen (
The method for solving this problem is to include a step of forming an insulating film containing O) as a constituent component.
【０００８】[0008]
【作用】銅配線の表面に銅−チタン合金膜を存在させる
ことによって、酸素（Ｏ）を構成成分とする絶縁膜（例
えばＳＯＧ膜，プラズマＳｉＯ２膜等）と銅の反応を抑
制する。即ち、銅−チタン合金膜中のチタン（Ｔｉ）は
、酸素をゲッタリングする作用があるため、高温処理を
経ても絶縁膜中の酸素はチタンと結合し、内部の銅とは
反応をしない。[Operation] The presence of a copper-titanium alloy film on the surface of the copper wiring suppresses the reaction between copper and an insulating film containing oxygen (O) (eg, SOG film, plasma SiO2 film, etc.). That is, since titanium (Ti) in the copper-titanium alloy film has the effect of gettering oxygen, even after high-temperature treatment, the oxygen in the insulating film combines with titanium and does not react with the copper inside.
【０００９】[0009]
【実施例】以下、本発明に係る半導体装置の製造方法の
詳細を図面に示す実施例に基づいて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the method of manufacturing a semiconductor device according to the present invention will be explained below based on the embodiments shown in the drawings.
【００１０】（第１実施例）図１〜図５は、本発明の第
１実施例を示している。(First Embodiment) FIGS. 1 to 5 show a first embodiment of the present invention.
【００１１】本実施例は、先ず、素子を形成したシリコ
ン基板（図示省略）上にＳｉＯ２で成る酸化膜１１を形
成した後、この酸化膜１１の所定の位置にコンタクトホ
ール（図示省略）を開孔する。続いて、ＤＣマグネトロ
ンスパッタリング法を用いてコンタクトメタルとしての
チタン（Ｔｉ）膜１２を例えばÅの厚さに形成し、次に
、バリアメタルとしての窒化チタン（ＴｉＮ）膜１３を
例えば１０００Åの厚さに形成する。In this embodiment, first, an oxide film 11 made of SiO2 is formed on a silicon substrate (not shown) on which an element is formed, and then a contact hole (not shown) is opened at a predetermined position in this oxide film 11. make a hole Next, a titanium (Ti) film 12 as a contact metal is formed to a thickness of, for example, 1000 Å using a DC magnetron sputtering method, and then a titanium nitride (TiN) film 13 as a barrier metal is formed to a thickness of, for example, 1000 Å. to form.
【００１２】さらに、窒化チタン膜１３上に、銅（Ｃｕ
）膜１４をＤＣマグネトロンスパッタリング法を用いて
例えば５０００Åの厚さに形成する。Furthermore, copper (Cu) is deposited on the titanium nitride film 13.
) The film 14 is formed to a thickness of, for example, 5000 Å using a DC magnetron sputtering method.
【００１３】そして、この銅膜１４を例えば反応性イオ
ンエッチング（ＲＩＥ）法を用いてパターニングする。
このエッチング条件は、以下に示す通りである。[0013] This copper film 14 is then patterned using, for example, reactive ion etching (RIE). The etching conditions are as shown below.
【００１４】○エッチングガス…四塩化炭素（ＣＣｌ４
）−８０％窒素（Ｎ２）
○圧力…０．０２Ｔｏｒｒ
○基板温度…３５０℃
○エッチングマスク…ＳｉＯ２
なお、このような銅膜１４のエッチング条件で、更に下
地の窒化チタン（ＴｉＮ）膜１３，チタン（Ｔｉ）膜１
２をエッチングすることが出来る。エッチング後、銅膜
１４，窒化チタン膜１３，チタン膜１２は図１に示すよ
うな断面形状に加工される。○Etching gas...Carbon tetrachloride (CCl4
) -80% nitrogen (N2) ○Pressure...0.02Torr ○Substrate temperature...350℃ ○Etching mask...SiO2 Note that under these etching conditions for the copper film 14, the underlying titanium nitride (TiN) film 13 and titanium (Ti) film 1
2 can be etched. After etching, the copper film 14, titanium nitride film 13, and titanium film 12 are processed into a cross-sectional shape as shown in FIG.
【００１５】次に、図２に示すように、ＤＣマグネトロ
ンスパッタリング法を用いてチタン（Ｔｉ）膜１５を全
面に例えば５００Åの厚さに形成する。Next, as shown in FIG. 2, a titanium (Ti) film 15 is formed to a thickness of, for example, 500 Å over the entire surface using a DC magnetron sputtering method.
【００１６】その後、例えば４５０℃，６０秒のランプ
アニールを行ない、銅膜１４とチタン膜１５とを反応さ
せ、図３に示すように、銅膜１４の周囲に銅チタン合金
（ＣｕＴｉＸ）膜１６を形成する。Thereafter, lamp annealing is performed at, for example, 450° C. for 60 seconds to cause the copper film 14 and the titanium film 15 to react, and as shown in FIG. 3, a copper titanium alloy (CuTiX) film 16 is formed around the copper film 14. form.
【００１７】次に、アンモニア過水で酸化膜１１上の未
反応のチタン膜１５を除去して、図４に示すような構造
にする。Next, the unreacted titanium film 15 on the oxide film 11 is removed using ammonia hydrogen peroxide to form a structure as shown in FIG.
【００１８】次に、図５に示すように、絶縁膜としてＳ
ＯＧ（Ｓｐｉｎ Ｏｎ Ｇｌａｓｓ；例えば東京応
化製ＯＣＤ−Ｔｙｐｅ７ １６０００Ｔ）膜１８をス
ピンコートし、４００℃のキュアリングを施す。Next, as shown in FIG. 5, S is used as an insulating film.
An OG (Spin On Glass; for example, OCD-Type 7 16000T manufactured by Tokyo Ohka) film 18 is spin-coated and cured at 400°C.
【００１９】この際、従来の銅配線では、銅とＳＯＧの
反応が生じるため銅が酸化され、抵抗が上昇して配線と
して実用に供されないものになっていた。しかし、本実
施例においては、以下に説明する作用によって銅配線は
酸化されない。At this time, in conventional copper wiring, a reaction between copper and SOG occurs, so that the copper is oxidized and its resistance increases, making it unusable as a wiring. However, in this embodiment, the copper wiring is not oxidized due to the action described below.
【００２０】銅膜１４の表面に、銅チタン合金膜１６を
存在させることによって、酸素（Ｏ）を構成成分とする
絶縁膜と銅の反応を抑制することができる。即ち、銅チ
タン合金膜１６中のチタン（Ｔｉ）は酸素をゲッタリン
グする作用があるため、高温熱処理を行なうと、絶縁膜
中の酸素はチタンと結合し、内部の銅膜１４の銅とは反
応しない。By providing the copper-titanium alloy film 16 on the surface of the copper film 14, the reaction between the insulating film containing oxygen (O) and copper can be suppressed. That is, since titanium (Ti) in the copper-titanium alloy film 16 has the effect of gettering oxygen, when high-temperature heat treatment is performed, the oxygen in the insulating film combines with titanium, and the copper in the internal copper film 14 is separated. no response.
【００２１】従って、絶縁膜としてＳＯＧ膜１８をスピ
ンコートし、４００℃のキュアリングを施すと、図５に
示すように、銅膜１４の上部及び側部に銅−チタンの化
合物と酸化チタン（ＴｉＯ）の混合相を持った安定層（
Ｃｕ−Ｔｉ−ＴｉＯ）１７が形成されるので、内部の銅
膜（銅配線）１４が酸化されることはない。Therefore, when the SOG film 18 is spin-coated as an insulating film and cured at 400° C., a copper-titanium compound and titanium oxide ( A stable layer (TiO) with a mixed phase of
Since Cu-Ti-TiO) 17 is formed, the internal copper film (copper wiring) 14 is not oxidized.
【００２２】（第２実施例）本実施例は、酸素（Ｏ）を
構成成分とする絶縁膜としてプラズマＣＶＤ法によって
形成されたＳｉＯ２を用いた例である。(Second Embodiment) This embodiment is an example in which SiO2 formed by plasma CVD is used as an insulating film containing oxygen (O) as a constituent component.
【００２３】先ず、本実施例においては、上記第１実施
例と同様の手順で、銅膜１４の表面に銅チタン合金膜を
形成した後、プラズマＣＶＤ法によってＳｉＯ２膜１９
を例えば７０００Åの厚さに形成する。First, in this embodiment, a copper-titanium alloy film is formed on the surface of the copper film 14 in the same manner as in the first embodiment, and then a SiO2 film 19 is formed by plasma CVD.
is formed to a thickness of, for example, 7000 Å.
【００２４】このＳｉＯ２膜１９の形成条件は、以下に
示す通りである。The conditions for forming this SiO2 film 19 are as shown below.
【００２５】○反応ガス及びその流量
シラン（ＳｉＨ４）…５００ＳＣＣＭ
酸素（Ｏ２）…１２０ＳＣＣＭ
ヘリウム（Ｈｅ）…３８００ＳＣＣＭ
○圧力…１．３Ｔｏｒｒ
○形成温度…３８０℃
このようにして、ＳｉＯ２膜１９を形成した場合、図６
に示すような断面形状が得られる。ここでも、上記第１
実施例と同様の効果が得られる。○Reactant gases and their flow rates Silane (SiH4)...500SCCM Oxygen (O2)...120SCCM Helium (He)...3800SCCM ○Pressure...1.3 Torr ○Formation temperature...380°C In this way, the SiO2 film 19 was formed. In the case, Figure 6
A cross-sectional shape as shown in is obtained. Again, the above first
Effects similar to those of the embodiment can be obtained.
【００２６】即ち、銅膜１４の表面に銅チタン合金膜を
存在させることによって、ＳｉＯ２と銅の反応を抑制す
ることができる。銅チタン合金膜中のチタン（Ｔｉ）は
酸素をゲッタリングする作用があるため、高温熱処理を
行なってもＳｉＯ２中の酸素はチタンと結合し、内部の
銅膜１４とは反応しない。That is, by providing the copper-titanium alloy film on the surface of the copper film 14, the reaction between SiO2 and copper can be suppressed. Since titanium (Ti) in the copper-titanium alloy film has the effect of gettering oxygen, even if high-temperature heat treatment is performed, the oxygen in SiO2 combines with titanium and does not react with the internal copper film 14.
【００２７】従って、絶縁膜としてＳｉＯ２膜１９を形
成したのち、図６に示すように銅膜（銅配線）１４の上
部及び側面に銅−チタンの化合物と酸化チタン（ＴｉＯ
）の混合相をもった安定層１７が形成される。Therefore, after forming the SiO2 film 19 as an insulating film, a copper-titanium compound and titanium oxide (TiO
A stable layer 17 having a mixed phase of ) is formed.
【００２８】以上、２つの実施例について説明したが、
本発明は、これらに限定されるものではなく、各種の銅
配線の構造に適用し得るものである。Two embodiments have been described above, but
The present invention is not limited to these, but can be applied to various copper wiring structures.
【００２９】[0029]
【発明の効果】本発明においては、銅配線の表面に銅−
チタン系合金膜を存在させることによって、酸素（Ｏ）
を構成成分とする絶縁膜と銅の反応を抑制する効果があ
る。即ち、銅−チタン系合金膜中のチタンが酸素をゲッ
タリングするため、高温熱処理を経ても絶縁膜中の酸素
はチタンと結合し内部の銅とは反応しない。このため、
本発明は銅配線を超ＬＳＩの配線として実用化させ得る
効果がある。Effects of the Invention In the present invention, copper-
By the presence of a titanium-based alloy film, oxygen (O)
It has the effect of suppressing the reaction between the insulating film containing copper and copper. That is, since the titanium in the copper-titanium alloy film getters oxygen, the oxygen in the insulating film combines with titanium and does not react with the copper inside even after high-temperature heat treatment. For this reason,
The present invention has the advantage that copper wiring can be put to practical use as wiring for VLSI.
【図１】本発明の第１実施例の工程を示す断面図。FIG. 1 is a sectional view showing the steps of a first embodiment of the present invention.
【図２】本発明の第１実施例の工程を示す断面図。FIG. 2 is a sectional view showing the steps of the first embodiment of the present invention.
【図３】本発明の第１実施例の工程を示す断面図。FIG. 3 is a sectional view showing the steps of the first embodiment of the present invention.
【図４】本発明の第１実施例の工程を示す断面図。FIG. 4 is a sectional view showing the steps of the first embodiment of the present invention.
【図５】本発明の第１実施例の工程を示す断面図。FIG. 5 is a sectional view showing the steps of the first embodiment of the present invention.
【図６】本発明の第２実施例の断面図。FIG. 6 is a sectional view of a second embodiment of the invention.
１１…酸化膜、１２…チタン膜、１３…窒化チタン膜、
１４…銅膜、１５…チタン膜、１６…銅チタン合金膜、
１７…安定層。11... Oxide film, 12... Titanium film, 13... Titanium nitride film,
14... Copper film, 15... Titanium film, 16... Copper titanium alloy film,
17... Stable layer.
Claims (1)
銅（Ｃｕ）−チタン（Ｔｉ）系合金膜を形成する工程と
、前記銅（Ｃｕ）−チタン（Ｔｉ）系合金膜が形成され
た銅配線上に、酸素（Ｏ）を構成成分とする絶縁膜を形
成する工程とを備えたことを特徴とする半導体装置の製
造方法。1. A step of forming a copper (Cu)-titanium (Ti)-based alloy film on a copper wiring surface formed on a base substrate, and a step of forming the copper (Cu)-titanium (Ti)-based alloy film. A method of manufacturing a semiconductor device, comprising: forming an insulating film containing oxygen (O) as a constituent on copper wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03124168A JP3120471B2 (en) | 1991-05-29 | 1991-05-29 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03124168A JP3120471B2 (en) | 1991-05-29 | 1991-05-29 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04350938A true JPH04350938A (en) | 1992-12-04 |
| JP3120471B2 JP3120471B2 (en) | 2000-12-25 |
Family
ID=14878638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03124168A Expired - Fee Related JP3120471B2 (en) | 1991-05-29 | 1991-05-29 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3120471B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306694A (en) * | 1995-04-01 | 1996-11-22 | Lg Semicon Co Ltd | Wiring structure of semiconductor and its preparation |
| CN105432154A (en) * | 2013-07-29 | 2016-03-23 | 费罗公司 | Method of forming conductive trace |
-
1991
- 1991-05-29 JP JP03124168A patent/JP3120471B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306694A (en) * | 1995-04-01 | 1996-11-22 | Lg Semicon Co Ltd | Wiring structure of semiconductor and its preparation |
| CN105432154A (en) * | 2013-07-29 | 2016-03-23 | 费罗公司 | Method of forming conductive trace |
| JP2016535924A (en) * | 2013-07-29 | 2016-11-17 | フエロ コーポレーション | Method for forming conductive traces |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3120471B2 (en) | 2000-12-25 |
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