JPH043496Y2 - - Google Patents

Description

[Detailed Description of the Invention] (a) Technical Field of the Invention The present invention relates to wafer loading in a plasma CVD apparatus, and particularly relates to a loading mechanism aimed at automation.

(b) Background of the technology Compared to the conventional CVD method, the plasma CVD method utilizes chemical reactions in plasma, so it requires a lower temperature (200 to 350°C).
℃), and a thick and high-quality silicon nitride film (Si ₃ N ₄ ) is formed, making it effective for forming the final protective film that improves the reliability of molded package type semiconductor devices, for example. It is. Plasma CVD equipment includes parallel plate electrode types, cylindrical electrode types, and hot wall electrodes, which have different configurations depending on the shape of the electrodes, reactor, etc., and sample placement.
-wall) has a shape. hot wall plasma
CVD equipment is effective for mass production because it is capable of processing a large number of wafers by placing them on the sides of multiple electrodes and processing them with plasma, but the electrode configuration is complex and sample loading and unloading is mainly done in batches, making it difficult to automate.

(c) Prior Art and Problems FIG. 1 is a block diagram showing a hot wall type plasma CVD apparatus, and FIG. 2 is a perspective view showing the electrode section of FIG. 1. In FIG. 1, a hot wall decompression type plasma CVD apparatus 1 is shown in which a heater 3 is arranged outside a reaction tube 2, and a plurality of electrodes 4 are arranged vertically inside the reaction tube 2, and the gaps between the electrodes 4 are set at regular intervals. Connect with the power supply bar 5 as shown in the figure.
The power supply bar 5 is connected to an external power source 6 via a connector, thereby generating plasma between the opposing electrodes 4 and 4'. Electrode 4 configured in this way
A semiconductor wafer 7 is placed on the side surface of the reactor tube 2, and the end cap 8 is closed and sealed. Heats the internal temperature to a constant temperature. Next, by introducing a reactive gas through the gas inlet 10, the reactive gas is diffused to the exhaust port 9, and the reactive gas is activated by the electrical energy in the plasma to form a desired thin film on the semiconductor wafer 7. . Although the plasma CVD apparatus 1 is capable of processing a large number of items in this way, the electrode configuration is
As shown in the figure, a plurality of electrodes 4 are arranged in parallel at equal intervals and are locked by a power supply bar 5. Since the electrode spacing is narrow and there is not enough flexibility in mounting, the electrodes 4 on the semiconductor wafer 7 are Attachment and removal is a batch process that mainly involves handling, and a loading mechanism that improves work efficiency through automation is required.

(d) Purpose of the invention In view of the above points, the purpose of the present invention is to propose an automated wafer loading device and improve work efficiency.

(e) Structure of the invention According to the invention, the wafer loading mechanism of a chemical vapor deposition apparatus that performs plasma processing by applying a high frequency voltage between electrodes has a pedestal that fixes the electrodes and a wafer that is placed on the wafer. This is achieved by having a comb-like arm that slides back and forth, and a rotation mechanism that rotates the base and arm to transfer the wafer on the arm to the side surface of the electrode.

(f) Embodiment of the invention Hereinafter, an embodiment of the invention will be described in detail with reference to the drawings. FIG. 3 is a block diagram showing a wafer loading device which is an embodiment of the present invention, and FIGS. 4 a to 4 d show the operating procedure for transferring a sample to an electrode using the wafer loading device of FIG. 3. FIG. Third
In the figure, a pedestal 12 on which the electrode 4 is placed and a column 14 on which a comb-like arm 13 is fixed are constituted by an arm mechanism 17 that slides in the horizontal direction by the drive of an air cylinder 16. The pedestal 12 and the arm mechanism 17 are rotated at 90° by the rotational drive of the motor 18.
When rotating, the semiconductor wafer 7 on the arm 13 is transferred to the electrode 4. Further, the wafer loading device 11 is moved from the electrode 4 to the arm 13 when the motor 18 rotates in the reverse direction so that the wafer loading device 11 can be attached and detached. A support column 14 for fixing the arm 13 is fixed to the shaft of a slide section 20 connected to an air cylinder 16 via a frame 15, and is moved in the horizontal direction by the drive of the air cylinder 16. The rotating arm 19 fixed to the slide part 20 is connected to the motor 18
The wafer rotates via the drive belt 21, rotates the pedestal 12 and the arm mechanism 17 by 90 degrees, and transfers the semiconductor wafer 7 on the arm 13 to the electrode 4, and is also rotated in the opposite direction to transfer it onto the arm 13 at the time of return. The wafer loading apparatus 11 is configured to allow the wafer to be replaced, and its operation procedure is as shown in FIG. The semiconductor wafer 7 with the processing side facing down is placed on the arm 13, and the air cylinder 16 is driven to slide the arm 13 to a predetermined position between the electrodes 4 as shown in a. In this state, the semiconductor wafer 7 is transferred to the electrode 4 by operating the motor 18 in the direction of the arrow (see FIG. 3) as shown in b, and rotating the semiconductor wafer 7 by 90 degrees via the rotating arm 19. ' is locked. Next, as shown in c, the arm 19 is further rotated by 90 degrees in the direction of the arrow, and the arm 19 is returned to its original position.The semiconductor wafer 7 is placed on this arm 19 and is slid between the electrodes 4 in the same manner as in the above-mentioned a. Next, as shown in d, the semiconductor wafer 7 is transferred to the back surface of the electrode 4 by rotating the motor (FIG. 3, 18) in the reverse direction and rotating it by 90° via the rotary arm. By the above operation, the semiconductor wafer 7 to be processed can be supplied to both sides of the electrode 4. The electrode 4 on which the semiconductor wafer 7 is placed in this way is accommodated in a reaction chamber of a plasma CVD apparatus, and a desired thin film is grown on the semiconductor wafer.
The operation of taking out the completed semiconductor wafer 7 from the electrode 4 can be carried out by rotating the loading mechanism set at position b in FIG. Automation improves work efficiency. It can also be expected to improve reliability.

(g) Effects of the invention As explained in detail above, the use of the wafer loading apparatus of the invention is effective in plasma CVD equipment aimed at automation, and an improvement in work efficiency can be expected.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing a hot wall type plasma CVD apparatus, FIG. 2 is a perspective view showing the electrode section of FIG. 1, and FIG. 3 is a block diagram showing a wafer loading apparatus which is an embodiment of the present invention. FIG. 4 is a diagram showing the operating state during the operation. In the figure 1... plasma CVD device, 2... reaction tube,
3... Heater, 4... Electrode, 5... Power supply bar, 6... External power supply, 7... Semiconductor wafer, 8...
...End cap, 9...Exhaust port, 10...Gas inlet, 11...Wafer loading device, 12...
...Pedestal, 13... Arm, 14... Support, 15...
...Frame, 16...Air cylinder, 17...
Arm mechanism, 18... Motor, 19... Rotating arm, 20... Slide portion, 21... Drive belt,
22...Tightening metal fittings.

Claims (1)

[Scope of utility model registration request] The wafer loading mechanism of chemical vapor deposition equipment, which performs plasma processing by applying high frequency voltage between electrodes,
It has a pedestal that fixes the electrode, and a comb-shaped arm on which the wafer is placed and slides back and forth, and a rotation mechanism that rotates the pedestal and arm transfers the wafer on the arm to the side surface of the electrode. A wafer loading device characterized by being configured as follows.