JPH04340523A - Production of wiring substrate - Google Patents

Production of wiring substrate

Info

Publication number
JPH04340523A
JPH04340523A JP11278091A JP11278091A JPH04340523A JP H04340523 A JPH04340523 A JP H04340523A JP 11278091 A JP11278091 A JP 11278091A JP 11278091 A JP11278091 A JP 11278091A JP H04340523 A JPH04340523 A JP H04340523A
Authority
JP
Japan
Prior art keywords
base material
polymer material
parts
transparent base
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11278091A
Other languages
Japanese (ja)
Inventor
Hidefumi Mifuku
御福 英史
Masanobu Obara
小原 雅信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11278091A priority Critical patent/JPH04340523A/en
Publication of JPH04340523A publication Critical patent/JPH04340523A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

PURPOSE:To easily produce the wiring substrate by irradiating the part of defective parts with light energy with a laser oscillator from the rear side of a transparent base material, thereby selectively removing a high-polymer material and exchanging the parts when a defect is generated in the parts of the wiring substrate formed by coating the parts and thin-film wirings with the high-polymer material. CONSTITUTION:The light energy generated by the laser oscillator 6 is condensed by an optical system 7 and the part having the defective parts 3 is irradiated with this light energy from the rear surface of the transparent base material 1. The chemical bond between the transparent base material 1 and the high- polymer material 5 is cut by the irradiation with the light of the high energy in such a manner and, therefore, the high-polymer material 5 peels from the transparent base material 1. This high-polymer material can easily be removed if the material is selectively heated. A heating tool, such as soldering iron, and a lamp, hot air blower, and laser are applicable as the means for heating and other heating means are equally employed. After the defective parts 3 are removed, the parts 3 are freshly mounted and packaged, by which the wiring substrate is produced.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、コンピュータ、ワード
プロセッサなどのOA機器に用いられる液晶表示装置の
基板の製法に関する。さらに詳しくは透明な基板上に形
成された薄膜配線、部品、高分子材料からなる配線基板
の高分子材料を選択的に除去し、この高分子材料によっ
て、被覆、埋設された電気的に不良な部品を交換し修復
する配線基板の製法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a substrate for a liquid crystal display device used in office automation equipment such as computers and word processors. More specifically, we selectively remove the polymer material of thin film wiring, components, and wiring boards made of polymer materials formed on transparent substrates, and use this polymer material to remove electrically defective materials that are covered or buried. This relates to a method for manufacturing wiring boards for which parts are replaced and repaired.

【0002】0002

【従来の技術】近年、液晶を用いた画像表示デバイスが
陰極線管(Cathode Ray Tube)と比較
して、薄くさらに軽いので、コンピュータ、ワードプロ
セッサなどのOA(Office Automatio
n)機器に数多く採用されている。 液晶表示装置(図3にその概略構造を示す)は、薄膜形
成された2枚の透明ガラス基材のあいだに液晶を封入し
、薄膜配線に表示用信号すなわち駆動信号を印加して液
晶を駆動する。駆動信号を供給するために、通常複数個
のLSIなどの部品を必要とする。従来、この駆動用L
SIはガラス基材1とは異なる他の基材14に搭載した
のちに、透明基材1と他の基材14を接続していた。こ
の方法では、他の基材14が余分に必要であるから、液
晶表示装置の小型化を制限していた。最近、この駆動用
LSIを他の基材を介することなく、直接透明基材、た
とえばガラス基材1にLSIを実装、搭載する方式が検
討されている。とくに、モールドしていないLSIチッ
プを直接実装、搭載する方法(COG:Chip On
 Glass)が最も小型化を達成する方法として注目
されている。電気的な接続には、LSIチップの入出力
端子と薄膜配線を微細なはんだの突起電極にて接続、搭
載する方法(フリップチップ法)が有望である。搭載し
たのちに、LSIチップを保護するため、LSIチップ
上を高分子材料にて、被覆、埋設する。
2. Description of the Related Art In recent years, image display devices using liquid crystals are thinner and lighter than cathode ray tubes (Cathode Ray Tubes).
n) Used in many devices. In a liquid crystal display device (the schematic structure of which is shown in Figure 3), liquid crystal is sealed between two transparent glass substrates formed with a thin film, and a display signal, that is, a drive signal, is applied to the thin film wiring to drive the liquid crystal. do. In order to supply drive signals, a plurality of components such as LSIs are usually required. Conventionally, this driving L
After the SI was mounted on another base material 14 different from the glass base material 1, the transparent base material 1 and the other base material 14 were connected. This method requires an additional base material 14, which limits miniaturization of the liquid crystal display device. Recently, a method of directly mounting and mounting this driving LSI on a transparent base material, for example, the glass base material 1, without using another base material has been studied. In particular, the method of directly mounting and mounting unmolded LSI chips (COG: Chip On
Glass) is attracting attention as the method for achieving the most miniaturization. A promising method for electrical connection is a method (flip-chip method) in which the input/output terminals of the LSI chip and the thin film wiring are connected and mounted using fine solder protrusions. After mounting, the LSI chip is covered with a polymer material and buried in order to protect the LSI chip.

【0003】LSIチップを搭載したのちの工程や、液
晶表示装置を実際に使用している際、外部から印加され
る静電気や熱応力の影響で、LSIが電気的に故障した
り、はんだ突起電極にき裂が生じたりして外れるなどの
不良が生じることがある。この際には、不良のLSIチ
ップを基材から取り外して、正常に動作するLSIチッ
プと交換、修復する必要がある。
[0003] During the process after mounting an LSI chip or during actual use of a liquid crystal display device, the LSI may be electrically damaged or solder protruding electrodes may be damaged due to the effects of static electricity and thermal stress applied from outside. This may result in defects such as cracking or coming off. In this case, it is necessary to remove the defective LSI chip from the base material and replace or repair it with a normally operating LSI chip.

【0004】不良のLSIチップを取り外し、配線基板
の修復をする従来の方法としては、図2に示す慣用的な
方法が考えられてきた。図において、1は透明基材、た
とえばガラス基材、2は透明基材上に形成された配線、
たとえばインジウム− 錫の複合酸化物(ITO;In
dium Thin Oxide)からなる薄膜配線、
3は薄膜配線2と電気的に接続し、透明基材1上に配置
された部品、たとえばLSI(Large Scale
Integrated Circuite)チップ、4
は薄膜配線2と部品3を電気的に接続する接合部材、た
とえばはんだ、5は部品3を被覆、埋設する高分子材料
、たとえばエポキシ樹脂、12はエポキシ樹脂を化学的
に溶解、除去する作用を有する溶剤、たとえば水酸化ナ
トリウム溶液、13は溶剤12を満たすための箱である
。この方法では、部品であるLSIチップ3に不良の生
じた配線基板を溶剤12内に浸漬して部品3を被覆、埋
設する高分子材料を除去し、LSIチップを交換する。
As a conventional method for removing a defective LSI chip and repairing a wiring board, a conventional method shown in FIG. 2 has been considered. In the figure, 1 is a transparent base material, for example, a glass base material, 2 is a wiring formed on the transparent base material,
For example, indium-tin composite oxide (ITO; In
Thin film wiring made of (dium thin oxide)
3 is a component electrically connected to the thin film wiring 2 and placed on the transparent base material 1, such as an LSI (Large Scale
Integrated Circuit) chip, 4
5 is a bonding member that electrically connects the thin film wiring 2 and the component 3, such as solder; 5 is a polymer material that covers or embeds the component 3, such as epoxy resin; 12 is a material that chemically dissolves and removes the epoxy resin; 13 is a box for filling the solvent 12, such as sodium hydroxide solution. In this method, a wiring board with a defective LSI chip 3 as a component is immersed in a solvent 12 to remove the polymeric material covering and embedding the component 3, and the LSI chip is replaced.

【0005】[0005]

【発明が解決しようとする課題】ところが、複数個搭載
されたLSIチップのなかから不良チップの高分子材料
だけを除去するために、選択的にこの高分子材料を溶剤
に浸漬することは困難である。さらに、一般に高分子材
料を溶解、除去する作用を有する溶剤はITOなどの薄
膜配線を同時に溶解するなど悪い影響与えるため、従来
慣用的に考えられてきたこの方法では部分的な部品交換
は不可能であり、現実には搭載したLSIチップに不良
が発生した配線基板や液晶表示装置は廃棄しているのが
現状である。
[Problem to be Solved by the Invention] However, it is difficult to selectively immerse the polymer material of a defective chip in a solvent in order to remove only the polymer material of a defective chip from among a plurality of LSI chips mounted. be. Furthermore, solvents that have the effect of dissolving and removing polymeric materials generally have a negative effect, such as dissolving thin film wiring such as ITO, so it is impossible to partially replace parts using this conventional method. In reality, however, wiring boards and liquid crystal display devices with defective LSI chips mounted on them are currently being discarded.

【0006】本発明はかかる問題を解決するためになさ
れたもので、透明基材上に搭載、実装された部品を被覆
、埋設する高分子材料を選択的に除去する方法を開示す
ることを目的とする。さらにこの方法によって、透明基
材上の配線になんらダメージを与えることなく、選択的
にこの部品を除去交換できる。
[0006] The present invention has been made in order to solve such problems, and its purpose is to disclose a method for selectively removing polymeric materials covering and embedding parts mounted and mounted on a transparent base material. shall be. Furthermore, this method allows selective removal and replacement of this component without causing any damage to the wiring on the transparent substrate.

【0007】[0007]

【課題を解決するための手段】本発明は前記目的を達成
するため、少なくとも二主面を有する透明基材の一主面
上に形成された電気的な薄膜配線、該薄膜配線と電気的
に接続し、該透明基材上に配置された部品、前記薄膜配
線と該部品を埋設または被覆する高分子材料からなる配
線基板の製法であって、前記透明基材の他の一主面から
、該透明基材を介して前記高分子材料に光エネルギーを
照射することによって、前記高分子材料と前記透明基材
の界面付近の前記高分子材料を選択的に光化学的または
熱的に変質させ、前記高分子材料を選択的に除去すると
共に、前記部品を交換し高分子材料で埋設することを特
徴とする配線基板の製法にある。
[Means for Solving the Problems] In order to achieve the above object, the present invention provides an electrical thin film wiring formed on one main surface of a transparent base material having at least two main surfaces, and an electrical connection between the thin film wiring and the thin film wiring. A method for producing a wiring board made of a polymeric material that connects and embeds or covers parts disposed on the transparent base material, the thin film wiring, and the parts, the method comprising: from the other main surface of the transparent base material; selectively photochemically or thermally altering the polymer material near the interface between the polymer material and the transparent substrate by irradiating the polymer material with light energy through the transparent base material; The method of manufacturing a wiring board is characterized in that the polymer material is selectively removed, and the parts are replaced and buried with the polymer material.

【0008】[0008]

【作用】透明基材と高分子材料は何らかの化学的な結合
力によって接合している。なぜならば、ガラス板に代表
される透明基材はその表面は平滑であり、高分子材料と
のあいだにいわゆるアンカー(楔効果)はほとんど介在
しない。光のエネルギーはその波長に逆比例し、波長が
短いほど光、言い換えればフォトン(光子)のエネルギ
ーは高くなる。高分子材料は一般に光の波長が短くなる
と、吸収係数が増加する。この光学的な特性は高分子材
料の分子構造と密接な関係がある。透明基材と高分子材
料の接合である基材と高分子材料の化学的な結合力は、
光のエネルギーで切断される。この結果、透明基材上に
形成された高分子材料は、裏面から光エネルギーを照射
することによって、照射された部分のみを選択的に除去
できる。よってこの高分子材料にて被覆、埋設され部品
を除去できる。
[Operation] The transparent base material and the polymeric material are bonded by some kind of chemical bonding force. This is because a transparent substrate typified by a glass plate has a smooth surface, and there is almost no so-called anchor (wedge effect) between it and the polymer material. The energy of light is inversely proportional to its wavelength; the shorter the wavelength, the higher the energy of the light, or photon. In general, the absorption coefficient of polymer materials increases as the wavelength of light becomes shorter. This optical property is closely related to the molecular structure of the polymer material. The chemical bonding force between the transparent base material and the polymer material, which is the bond between the base material and the polymer material, is
Cut by light energy. As a result, by irradiating light energy from the back side of the polymer material formed on the transparent base material, only the irradiated portions can be selectively removed. Therefore, parts covered and buried with this polymer material can be removed.

【0009】しかし、本発明において考慮すべき点は、
短波長の光の高分子材料に対する相互作用が大きいから
といって、直ちに短波長の光が本発明に有利とは限らな
いことである。なぜならば、透明基材も高分子材料と同
様に光の波長が短くなると、一般的な傾向として吸収係
数が増加する。光の波長が短くなればそれに伴い、透明
基材を介して高分子材料に照射された光エネルギーは透
明基材で吸収され、言い換えれば、直ちに熱エネルギー
に転換される割合は増加する。このため、高分子材料に
投入されるエネルギーは減少する。したがって、照射さ
れる全エネルギーの内、透明基材と高分子材料の界面を
はく離することにかかわる割合は減少する。しかし、そ
の化学的な反応を考えると、反応温度が上昇することに
なるので、反応の頻度、言い換えれば、反応の速度はお
のずと増加する。この反応時の温度は照射される光エネ
ルギーだけによらずとも、透明基材や高分子材料の温度
を積極的に制御することによっても同様に制御できる。 このように、本発明においては、照射される光エネルギ
ーの条件、たとえば、波長、パワー、照射時間、照射面
積、温度などは使用される透明基材と高分子材料の材質
や形状に依存する。したがって、それらの条件は使用材
料によって適宜決定せられる。
However, the points to be considered in the present invention are:
Just because short-wavelength light has a large interaction with polymeric materials does not necessarily mean that short-wavelength light is advantageous to the present invention. This is because, as with polymeric materials, when the wavelength of light becomes shorter, the absorption coefficient of transparent substrates also tends to increase as a general tendency. As the wavelength of light becomes shorter, the proportion of light energy irradiated onto a polymer material through a transparent base material is absorbed by the transparent base material, or in other words, the rate at which it is immediately converted into thermal energy increases. Therefore, the energy input into the polymeric material is reduced. Therefore, the proportion of the total energy irradiated that is involved in peeling off the interface between the transparent substrate and the polymeric material is reduced. However, considering the chemical reaction, since the reaction temperature increases, the frequency of the reaction, in other words, the rate of the reaction naturally increases. The temperature during this reaction can be controlled not only by the irradiated light energy but also by actively controlling the temperature of the transparent substrate or polymer material. Thus, in the present invention, the conditions of the irradiated light energy, such as wavelength, power, irradiation time, irradiation area, temperature, etc., depend on the materials and shapes of the transparent base material and polymer material used. Therefore, those conditions are appropriately determined depending on the materials used.

【0010】0010

【実施例】以下、本発明の実施例を図に基づいて説明す
る。図1は配線基板の修復の方法を示す概略図である。 図において、1は透明基材、たとえばガラス基材、2は
透明基材上に形成された配線、たとえばインジウム− 
錫の複合酸化物(ITO;Indium Thin O
xide)からなる薄膜配線、3は薄膜配線2と電気的
に接続し、透明基材1上に配置された部品、たとえばL
SIチップ、4は薄膜配線2と部品3を電気的に接続す
る接合部材、たとえばはんだ、5は部品3を被覆、埋設
する高分子材料、たとえばエポキシ樹脂、6は紫外光域
に発振波長を有するレーザ発振器であり、たとえばエキ
シマレーザ発振器、7はエキシマレーザを集光するため
の光学系、8はエキシマレーザまたはガラス基材を走査
する駆動系、9はエキシマレーザのON/OFF、出力
、駆動系を制御するコントローラである。
Embodiments Hereinafter, embodiments of the present invention will be explained based on the drawings. FIG. 1 is a schematic diagram showing a method of repairing a wiring board. In the figure, 1 is a transparent base material, for example, a glass base material, and 2 is a wiring formed on the transparent base material, for example, indium-
Tin complex oxide (ITO; Indium Thin O
A thin film wiring 3 consisting of
SI chip, 4 is a bonding member that electrically connects the thin film wiring 2 and the component 3, such as solder; 5 is a polymeric material that covers or embeds the component 3, such as epoxy resin; 6 is an oscillation wavelength in the ultraviolet region; A laser oscillator, for example, an excimer laser oscillator; 7 is an optical system for focusing the excimer laser; 8 is a drive system for scanning the excimer laser or a glass substrate; 9 is an excimer laser ON/OFF, output, and drive system It is a controller that controls the

【0011】この構成でレーザ発振器6により発生した
光エネルギーを光学系7で集光して、不良の部品3があ
る部分の透明基材1の裏面から照射する。その結果、前
述したように、高エネルギーの光を照射することによっ
て、透明基材と高分子材料の化学的な結合力が切断され
るから、高分子材料は透明基材からはく離する。この後
、この高分子材料を選択的に加熱すると容易に除去でき
る。加熱の手段としては、はんだこてなどのヒートツー
ル、ランプ、温風送風器、レーザが応用可能であるが、
他の加熱手段であってもよい。不良の部品3を除去した
のちに新たに部品3を搭載、実装することにより配線基
板を製造することができる。
With this configuration, the light energy generated by the laser oscillator 6 is focused by the optical system 7 and irradiated from the back surface of the transparent base material 1 at the portion where the defective component 3 is located. As a result, as described above, the chemical bonding force between the transparent substrate and the polymeric material is severed by irradiation with high-energy light, so that the polymeric material is peeled off from the transparent substrate. Thereafter, the polymer material can be easily removed by selectively heating it. As heating means, heat tools such as soldering irons, lamps, hot air blowers, and lasers can be used.
Other heating means may also be used. A wiring board can be manufactured by removing the defective component 3 and then mounting and mounting a new component 3.

【0012】0012

【発明の効果】以上説明したように、本発明の配線基板
の製法によれば、透明基材を介して高分子材料に選択的
にレーザなどの光エネルギーを投入するようにしたので
、不良の部品の部分だけ高分子材料を除去でき、正常に
動作する部品との交換が容易にできる。その結果透明基
材、配線基板上に形成された薄膜配線、他の高分子材料
、それに被覆、埋設される部品になんら影響を及ぼさな
い。また、他の部分はそのまま再使用でき、配線基板の
製造コスト引き下げに寄与し、ひいては液晶表示装置の
コストダウンに寄与する。
[Effects of the Invention] As explained above, according to the method for manufacturing a wiring board of the present invention, optical energy such as a laser beam is selectively applied to the polymer material through the transparent base material, so that defects can be avoided. The polymer material can be removed only from parts, making it easy to replace them with parts that are in good working order. As a result, there is no effect on the transparent substrate, the thin film wiring formed on the wiring board, other polymer materials, or the parts covered or embedded therein. In addition, other parts can be reused as they are, contributing to lower manufacturing costs of wiring boards and, in turn, to lowering costs of liquid crystal display devices.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の配線基板の製法の概略説明図である。FIG. 1 is a schematic explanatory diagram of a method for manufacturing a wiring board according to the present invention.

【図2】従来の配線基板の製法の概略説明図である。FIG. 2 is a schematic explanatory diagram of a conventional wiring board manufacturing method.

【図3】従来の液晶装置の概略分解斜視図である。FIG. 3 is a schematic exploded perspective view of a conventional liquid crystal device.

【符号の説明】[Explanation of symbols]

1  透明基材 2  薄膜配線 3  部品 4  接合部材 5  高分子材料 6  レーザ発振器 7  光学系 8  駆動系 9  コントローラ 1 Transparent base material 2 Thin film wiring 3 Parts 4 Joining member 5 Polymer materials 6 Laser oscillator 7. Optical system 8 Drive system 9 Controller

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  少なくとも二主面を有する透明基材の
一主面に電気的な薄膜配線を形成し、該薄膜配線と電気
的に接続して前記透明基材上に部品を配置し、前記薄膜
配線と該部品を高分子材料で埋設または被覆する配線基
板の製法であって、前記透明基材の他の一主面から、該
透明基材を介して前記高分子材料に光エネルギーを照射
することによって、前記高分子材料と前記透明基材の界
面付近の前記高分子材料を選択的に光化学的または熱的
に変質させ、該高分子材料を除去すると共に、前記部品
を交換することを特徴とする配線基板の製法。
1. Forming electrical thin film wiring on one main surface of a transparent base material having at least two main surfaces, disposing a component on the transparent base material in electrical connection with the thin film wiring, and disposing a component on the transparent base material, A method for manufacturing a wiring board in which thin film wiring and the components are buried or covered with a polymeric material, the method comprising irradiating the polymeric material with light energy from the other principal surface of the transparent substrate through the transparent substrate. By doing so, the polymer material near the interface between the polymer material and the transparent substrate is selectively photochemically or thermally altered, the polymer material is removed, and the parts are replaced. Characteristic wiring board manufacturing method.
JP11278091A 1991-05-17 1991-05-17 Production of wiring substrate Pending JPH04340523A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11278091A JPH04340523A (en) 1991-05-17 1991-05-17 Production of wiring substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11278091A JPH04340523A (en) 1991-05-17 1991-05-17 Production of wiring substrate

Publications (1)

Publication Number Publication Date
JPH04340523A true JPH04340523A (en) 1992-11-26

Family

ID=14595314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11278091A Pending JPH04340523A (en) 1991-05-17 1991-05-17 Production of wiring substrate

Country Status (1)

Country Link
JP (1) JPH04340523A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114710891A (en) * 2022-04-02 2022-07-05 中国科学院福建物质结构研究所 Apparatus and method for printing circuit on transparent material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114710891A (en) * 2022-04-02 2022-07-05 中国科学院福建物质结构研究所 Apparatus and method for printing circuit on transparent material

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