JPH04336440A - Wire bonding apparatus and wire bonding method - Google Patents

Wire bonding apparatus and wire bonding method

Info

Publication number
JPH04336440A
JPH04336440A JP3138162A JP13816291A JPH04336440A JP H04336440 A JPH04336440 A JP H04336440A JP 3138162 A JP3138162 A JP 3138162A JP 13816291 A JP13816291 A JP 13816291A JP H04336440 A JPH04336440 A JP H04336440A
Authority
JP
Japan
Prior art keywords
wire
capillary
bonding
clamper
clamping force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3138162A
Other languages
Japanese (ja)
Other versions
JP2539963B2 (en
Inventor
Masayuki Hiroki
廣木 正幸
Kazuhiro Kawabata
川端 数博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3138162A priority Critical patent/JP2539963B2/en
Publication of JPH04336440A publication Critical patent/JPH04336440A/en
Application granted granted Critical
Publication of JP2539963B2 publication Critical patent/JP2539963B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/786Means for supplying the connector to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To form the appropriate loop of a wire between a first and a second bonding pad without the loop contacting with a counterpart pad which causes a short circuit, the disconnection of the wire on the first bonding pad, and the damage to the wire due to the clamping impact of a clamper. CONSTITUTION:At the initial stage prior to the bonding, a clamper 17 clamps a wire 6 with a smaller force until the arrival of a capillary 2 at a first bonding pad. Thereafter, the clamper 7 continues the clamping with a larger force. After the completion of the bonding of the first bonding pad, the clamper 17 and the capillary 2, both situated at a predetermined height above a second bonding pad, effect a second bonding, with a suitable length ensured for a loop 6b, by a timing delay in the completion of the fall between the capillary 2 and the clamper 17.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、半導体チップと外部
リードなど被接続物間を金属細線で接続する、ワイヤボ
ンディング装置及びワイヤボンディング方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus and a wire bonding method for connecting a semiconductor chip and an object to be connected such as an external lead using a thin metal wire.

【0002】0002

【従来の技術】図4及び図5は例えば特開昭61−11
3250号公報に示された、従来のワイヤボンディング
装置の概略側面図及びワイヤボンディング方法を動作順
に示す説明図である。図4において、1はワイヤボンデ
ィング装置で、次のように構成されている。キャピラリ
2と、この上方でワイヤ6を挟付けるクランプ手段3と
、上部に配設され、ワイヤ6を繰出し供給するボビン7
とを備えている。8はワイヤ6のガイドである。
[Prior Art] FIGS. 4 and 5 are, for example, Japanese Patent Laid-Open No. 61-11
3250 is a schematic side view of a conventional wire bonding device and an explanatory diagram showing a wire bonding method in order of operation. FIG. In FIG. 4, reference numeral 1 denotes a wire bonding device, which is configured as follows. A capillary 2, a clamping means 3 for clamping the wire 6 above the capillary 2, and a bobbin 7 disposed above the capillary 2 and feeding the wire 6.
It is equipped with 8 is a guide for the wire 6.

【0003】上記キャピラリ2は、ワイヤ2が通され上
下移動手段(図示しない)により上下動される。クラン
プ手段3は上下移動手段(図示しない)により上下動さ
れ、かつ、開閉手段(図示しない)によりワイヤ6を挟
付け及び開放する。
A wire 2 is passed through the capillary 2, and the capillary 2 is moved up and down by an up and down moving means (not shown). The clamping means 3 is moved up and down by a vertical moving means (not shown), and clamps and releases the wire 6 by an opening/closing means (not shown).

【0004】次に、このワイヤボンディング装置1によ
るワイヤボンディング方法を、図5により説明する。ま
ず、A図において、クランプ手段3はワイヤ6を挟付け
ており、ワイヤ6の先端はキャピラリ2の下部より出さ
れ球体6aにされている。ステージ(図示しない)上に
リードフレーム5が固定され、リードフレーム上に半導
体チップ4が固着されている。4aはチップ4の電極、
5aは外部リードで、5bは電極部である。キャピラリ
2の真下に電極4aが位置している。
Next, a wire bonding method using this wire bonding apparatus 1 will be explained with reference to FIG. First, in Fig. A, the clamping means 3 clamps a wire 6, and the tip of the wire 6 is brought out from the lower part of the capillary 2 to form a sphere 6a. A lead frame 5 is fixed on a stage (not shown), and a semiconductor chip 4 is fixed on the lead frame. 4a is the electrode of chip 4;
5a is an external lead, and 5b is an electrode portion. An electrode 4a is located directly below the capillary 2.

【0005】つづいて、B図のように、クランプ手段3
の挟付けを開放した後、キャピラリ2を下降し電極4a
に圧接し、加熱してワイヤ6の先端を電極4aに圧着す
る。 ついで、キャピラリ2を上昇させるとともに、C図に示
すように、ステージを移動してキャピラリ2及びクラン
プ手段3をステージに相対的に平行移動し、外部リード
5aの電極部5b上方に位置させる。この移動によりワ
イヤ6が所定長さ繰出される。
Next, as shown in Figure B, the clamping means 3
After releasing the clamp, the capillary 2 is lowered and the electrode 4a
The tip of the wire 6 is pressed onto the electrode 4a by heating. Next, the capillary 2 is raised, and as shown in Figure C, the stage is moved to move the capillary 2 and the clamp means 3 parallel to the stage, and position them above the electrode section 5b of the external lead 5a. This movement allows the wire 6 to be paid out a predetermined length.

【0006】この後、キャピラリ2を下降し、下降途中
でD図のように、クランプ手段3でワイヤ6を挟付け、
このクランプ手段3をキャピラリ2と共に下降し、キャ
ピラリ2を電極部5bに圧接し、加熱してワイヤ6の途
中を電極部5bに圧着する。
After that, the capillary 2 is lowered, and on the way down, the wire 6 is clamped by the clamping means 3 as shown in Fig. D.
This clamping means 3 is lowered together with the capillary 2, the capillary 2 is pressed against the electrode part 5b, and heated to press the middle of the wire 6 to the electrode part 5b.

【0007】引続き、E図のように、クランプ手段3の
挟付けを開放し、キャピラリ2の上昇を開始する。F図
に示すように、キャピラリ2の上昇途中でクランプ手段
3でワイヤ6を挟付ける。さらに、G図のように、クラ
ンプ手段3をキャピラリ2と共に上昇する。これにより
、ワイヤ6が電極部5bへの圧着部上から切断され、チ
ップ4と外部リード5aとがワイヤボンディングされた
ことになる。
Subsequently, as shown in Fig. E, the clamping means 3 is released and the capillary 2 begins to rise. As shown in Figure F, the wire 6 is clamped by the clamping means 3 while the capillary 2 is rising. Furthermore, as shown in Figure G, the clamping means 3 is raised together with the capillary 2. As a result, the wire 6 is cut from above the crimped portion to the electrode portion 5b, and the chip 4 and the external lead 5a are wire-bonded.

【0008】最後に、H図のように、水素トーチ9でワ
イヤ6の先端を加熱し、I図に示すように、ワイヤ6の
先端を球体6aに形成し完了する。
Finally, as shown in Figure H, the tip of the wire 6 is heated with a hydrogen torch 9, and as shown in Figure I, the tip of the wire 6 is formed into a sphere 6a, completing the process.

【0009】なお、クランプ手段3の挟付けのタイミン
グは、二つのカムを用いた、いわゆる合せカムで調整し
、ワイヤ6の長さやキャピラリ2の上昇高さを考慮し、
キャピラリ2の下降途中で挟付けるようにしている。
The timing of clamping the clamping means 3 is adjusted by a so-called combination cam using two cams, taking into consideration the length of the wire 6 and the height of the capillary 2.
The capillary 2 is clamped in the middle of its descent.

【0010】上記図5Cの状態で、キャピラリ2が上昇
すると、図6のように、ワイヤ6がクランプ手段3との
間で湾曲し、たるみ6dが発生することがある。これは
、ワイヤ6が極細で軟性であり、キャピラリ2内の摩擦
抵抗で押上げられることによる。このため、ワイヤ6の
長さHをすべて用いてできた適正ループ6bに対し、た
るみ6dだけ短くなった短小ループ6cとなる。この短
小ループ6cになると、中間部が半導体チップ4の角部
に接触し短絡することになる。また、図7に示すように
、短小ループ6cによりワイヤ6が強く引張られ、電極
4aの接続部上で折れ曲り切断することがある。
When the capillary 2 rises in the state shown in FIG. 5C, the wire 6 may be bent between it and the clamping means 3, causing slack 6d, as shown in FIG. This is because the wire 6 is extremely thin and soft, and is pushed up by the frictional resistance within the capillary 2. Therefore, compared to the proper loop 6b made by using the entire length H of the wire 6, a short and small loop 6c is formed, which is shorter by the slack 6d. When the short loop 6c is formed, the intermediate portion contacts the corner portion of the semiconductor chip 4, resulting in a short circuit. Further, as shown in FIG. 7, the wire 6 may be strongly pulled by the short loop 6c and may be bent and broken on the connection portion of the electrode 4a.

【0011】また、ワイヤ6をクランプ手段3で強く挟
付けるので、金細線やアルミ細線などからなるワイヤ6
に、挟付けの衝撃で断面が縮小したくびれができること
がある。このくびれがワイヤ6のループに位置した状態
を、図8に平面図で示す。6eはこのくびれである。
Furthermore, since the wire 6 is strongly clamped by the clamping means 3, the wire 6 made of thin gold wire, thin aluminum wire, etc.
In some cases, the impact of pinching can cause a constriction with a reduced cross section. A state in which this constriction is located in the loop of the wire 6 is shown in a plan view in FIG. 6e is this constriction.

【0012】0012

【発明が解決しようとする課題】上記のような従来のワ
イヤボンディング装置1及びワイヤボンディング方法で
は、第1及び第2ボンド点間のワイヤボンディングによ
りできたワイヤ6のループが短小ループ6cになること
があり、ループが半導体チップ4の角部に接触し短絡し
たり、電極4aの接続部上でワイヤが折れ曲り切断する
ことがあるという問題点があった。また、クランプ手段
3によりワイヤ6を急激に強く挟付けるので、くびれ6
eが生じることがあるという問題点があった。
[Problems to be Solved by the Invention] In the conventional wire bonding apparatus 1 and wire bonding method as described above, the loop of the wire 6 formed by wire bonding between the first and second bonding points becomes a short and small loop 6c. There are problems in that the loop may come into contact with the corner of the semiconductor chip 4 and cause a short circuit, or the wire may bend and break on the connection portion of the electrode 4a. In addition, since the wire 6 is suddenly and strongly clamped by the clamping means 3, the constriction 6
There is a problem that e may occur.

【0013】さらに、図5(D)の状態でワイヤ6をク
ランプ手段3で挟付ける際に、挟付け完了時間のばらつ
きがあるので、ループを形成するワイヤ6の長さにばら
つきができ、均一な適正ループ形状を得ることが難しい
という問題点があった。
Furthermore, when the wire 6 is clamped by the clamping means 3 in the state shown in FIG. There was a problem in that it was difficult to obtain a suitable loop shape.

【0014】この発明は、このような問題点を解決する
ためになされたもので、第1ボンド点と第2ボンド点の
間のワイヤが適正ループに形成され、ループが途中で一
方の被接続物に接触したり、第1ボンド点の接続部上で
ワイヤが切断したりすることなく、また、ワイヤがクラ
ンパ手段による強い挟付けでくびれが生じることのない
、ワイヤボンディング装置及びワイヤボンディング方法
を得ることを目的としている。
[0014] The present invention was made in order to solve such problems, and the wire between the first bond point and the second bond point is formed into a proper loop, and one of the connected wires is connected in the middle of the loop. To provide a wire bonding device and a wire bonding method in which the wire does not come into contact with objects or break on the connection portion of the first bonding point, and the wire does not become constricted due to strong clamping by a clamper means. The purpose is to obtain.

【0015】[0015]

【課題を解決するための手段】この発明にかかるワイヤ
ボンディング装置及びワイヤボンディング方法は、ワイ
ヤボンディングサイクル動作を、常にワイヤをクランパ
で挟付けた状態で行い、工程の初期でのキャピラリを下
降する際は、クランパを所定高さ位置で、ワイヤが滑っ
て引下げられる弱い挟付けをし、第1ボンド点での接続
以後の工程では、クランパはワイヤを固定する挟付けを
しており、上昇したキャビティとクランパとを第2ボン
ド点上方に移動するとともに、クランパの下降完了に対
しキャピラリの第2ボンド点上への下降完了を遅らせて
いる。第2ボンド点での接続後キャピラリを上昇開始し
、これより遅らせてクランパを上昇開始したものである
[Means for Solving the Problems] The wire bonding apparatus and wire bonding method according to the present invention perform the wire bonding cycle operation with the wire always being clamped between the clampers, and when lowering the capillary at the beginning of the process. In this case, the clamper is held at a predetermined height position, and the wire is pulled down by a weak clamp, and in the process after the connection at the first bond point, the clamper clamps the wire in place, and the wire is clamped in place in the raised cavity. and the clamper are moved above the second bond point, and the completion of the capillary's descent above the second bond point is delayed relative to the completion of the descent of the clamper. After connection at the second bond point, the capillary starts to rise, and after this, the clamper starts to rise.

【0016】[0016]

【作用】この発明においては、ワイヤをクランパにより
常に挟付けており、挟付けと開放の繰返しによりワイヤ
に加わる衝撃による損傷をなくしている。また、ワイヤ
を挟付けるまでの時間のばらつきがなく、第1ボンド点
での接続後のキャピラリの上昇による、クランパ間のワ
イヤのたるみがなくされ、キャビティの下方のワイヤが
所定長さにされ、第2ボンド点での接続によるワイヤの
ループが適正形状にでき、ループの中間部が一方の被接
続物へ接触したり、第1ボンド点の接続部上でワイヤが
引張られ切断したりすることがなくなる。
[Operation] In this invention, the wire is always clamped by the clamper, and damage caused by shocks applied to the wire is eliminated by repeating clamping and releasing. In addition, there is no variation in the time it takes to clamp the wire, there is no slack in the wire between the clampers due to the rise of the capillary after connection at the first bond point, and the wire below the cavity is made to a predetermined length. The wire loop formed by the connection at the second bond point can be formed into an appropriate shape, and the middle part of the loop may come into contact with one of the objects to be connected, or the wire may be pulled and cut on the connection point at the first bond point. disappears.

【0017】[0017]

【実施例】図1は、この発明によるワイヤボンディング
装置の一実施例の概要構成図である。ワイヤボンディン
グ装置10は次のように構成されている。11はボンデ
ィングヘッド本体で、X−Yテーブル12上に固定され
ている。X−Yテーブル12は、X軸用電動機13によ
りX軸駆動伝達手段(図示しない)を介しX軸方向に移
動され、また、Y軸用電動機14によりY軸駆動伝達手
段(図示しない)を介しY軸方向に移動される。キャピ
ラリ2は超音波ホーン15の先端に取付けられており、
超音波ホーン15は中間部で支持ピン16を介し回動可
能にヘッド本体11に支持されている。ワイヤ6を挟付
けるクランパ17は支持腕18の先端に取付けられてお
り、支持腕18は中間部で支持ピン19を介し回動可能
にヘッド本体11に支持されている。20は第1Z軸用
電動機で、第1上下動伝達手段21を介し超音波ホーン
15の後端部に連結されていて上下動させる。これによ
り、超音波ホーン15は支持ピン16を中心とし回動さ
れ、キャピラリ2を上下動させる。22は第2Z軸用電
動機で、第2上下動伝達手段23を介し、支持腕18の
後端部に連結されていて上下動させる。これにより、支
持腕18は支持ピン19を中心として回動され、クラン
パ17を上下動させる。第1及び第2上下動伝達手段2
1及び23は、例えば、それぞれ次のように構成されて
いる。電動機20、22の軸端に固着された連結体24
に、連結ピン25を介しリンク26の下端部を連結して
いる。リンク26は上端部のローラ27を介し、超音波
ホーン15の後端部及び支持腕18の後端部にそれぞれ
連結している。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic diagram of an embodiment of a wire bonding apparatus according to the present invention. The wire bonding apparatus 10 is configured as follows. 11 is a bonding head main body, which is fixed on an XY table 12. The X-Y table 12 is moved in the X-axis direction by an X-axis electric motor 13 via an X-axis drive transmission means (not shown), and is moved by a Y-axis electric motor 14 via a Y-axis drive transmission means (not shown). is moved in the Y-axis direction. The capillary 2 is attached to the tip of the ultrasonic horn 15,
The ultrasonic horn 15 is rotatably supported by the head body 11 via a support pin 16 at an intermediate portion. A clamper 17 for clamping the wire 6 is attached to the tip of a support arm 18, and the support arm 18 is rotatably supported by the head body 11 via a support pin 19 at an intermediate portion. Reference numeral 20 denotes a first Z-axis electric motor, which is connected to the rear end of the ultrasonic horn 15 via a first vertical movement transmission means 21 to move it up and down. As a result, the ultrasonic horn 15 is rotated about the support pin 16, causing the capillary 2 to move up and down. Reference numeral 22 denotes a second Z-axis electric motor, which is connected to the rear end of the support arm 18 via a second vertical movement transmission means 23 to move it up and down. As a result, the support arm 18 is rotated about the support pin 19, causing the clamper 17 to move up and down. First and second vertical motion transmission means 2
1 and 23 are each configured as follows, for example. A connecting body 24 fixed to the shaft ends of the electric motors 20 and 22
The lower end of the link 26 is connected to the link 26 via a connecting pin 25. The link 26 is connected to the rear end of the ultrasonic horn 15 and the support arm 18 via a roller 27 at the upper end.

【0018】次に、28はヘッド本体11に取付けられ
、ワイヤ6を導く案内体、29はワイヤ6を巻回してお
り、引出されるワイヤスプールである。30はキャピラ
リ2の下部にワイヤ6の球体6aを形成するための水素
などのトーチである。
Next, 28 is a guide body that is attached to the head body 11 and guides the wire 6, and 29 is a wire spool from which the wire 6 is wound and drawn out. 30 is a hydrogen torch or the like for forming the sphere 6a of the wire 6 at the bottom of the capillary 2.

【0019】上記クランパ17を図2に示す。31は固
定片、32は支持軸33を介し固定片31に回動可能に
支持された可動片で、双方間にワイヤ6を上下方向に通
している。34は励磁コイル、35は継鉄である。励磁
コイル34に通電すると、可動片32の後端の可動鉄片
部が吸引され、可動片32が閉じワイヤ6を挟付ける。 通電を断つと、復帰ばね(図示しない)により可動片3
2が開く。励磁コイル34への電流を弱、強の2段階に
切替えることにより、挟付け力はワイヤ6を滑らかに引
出すことができる1段目の弱い挟付けと、ワイヤ6を固
定(変形しない程度)する2段目の強い挟付けとがなさ
れる。
The clamper 17 is shown in FIG. 31 is a fixed piece, 32 is a movable piece rotatably supported by the fixed piece 31 via a support shaft 33, and the wire 6 is passed between them in the vertical direction. 34 is an exciting coil, and 35 is a yoke. When the excitation coil 34 is energized, the movable iron piece at the rear end of the movable piece 32 is attracted, and the movable piece 32 closes and pinches the wire 6. When the power is cut off, the movable piece 3 is moved by a return spring (not shown).
2 opens. By switching the current to the excitation coil 34 into two stages, weak and strong, the clamping force can be set to a weak clamping force in the first stage that allows the wire 6 to be pulled out smoothly, and a weak clamping force in the first stage that allows the wire 6 to be fixed (to the extent that it does not deform). A second stage of strong pinching is performed.

【0020】図1に返り、40はステージで上部にリー
ドフレーム42を吸着しており、リードフレーム42上
には半導体チップ41が固着されている。41aはチッ
プ41の電極で、第1ボンド点をなす。42bはリード
フレーム42の外部リード42aの電極部である。
Returning to FIG. 1, reference numeral 40 denotes a stage, on which a lead frame 42 is attracted, and a semiconductor chip 41 is fixed onto the lead frame 42. As shown in FIG. Reference numeral 41a denotes an electrode of the chip 41, which forms a first bonding point. 42b is an electrode portion of the external lead 42a of the lead frame 42.

【0021】上記ワイヤボンディング装置10によるワ
イヤボンディング方法を、図3により説明する。クラン
パ17は全工程中挟付け動作をしており、A、B図の工
程では、ワイヤ6を引出し可能な弱い一段目の挟付けを
しており、C〜H図の工程では、ワイヤ6を固定保持し
た強い挟付け(ただし、ワイヤ6が変形しない程度であ
り、ハッチングで表示)をしている。まず、A図におい
て、クランパ17はワイヤ6を一段目の挟付けをしてお
り、ワイヤ6の先端はキャピラリ2の下部から出され球
体6aにされている。キャピラリ2とクランパ17は、
電極41a上方位置にある。
A wire bonding method using the wire bonding apparatus 10 will be explained with reference to FIG. The clamper 17 performs a clamping operation during the entire process, and in the processes shown in figures A and B, it performs a weak first stage clamping that allows the wire 6 to be pulled out, and in the processes shown in figures C to H, it clamps the wire 6. The wire 6 is held firmly and strongly clamped (however, the wire 6 is not deformed and is indicated by hatching). First, in FIG. A, the clamper 17 clamps the wire 6 in the first stage, and the tip of the wire 6 is brought out from the lower part of the capillary 2 to form a sphere 6a. Capillary 2 and clamper 17 are
It is located above the electrode 41a.

【0022】つづいて、B図のように、キャピラリ2を
下降するとともに、クランパ17を挟付け力の切替位置
h高さまで下降する。キャピラリ2がチップ41の電極
41a上に下降すると、超音波ホーン15で超音波発振
させ、第1ボンディングをする。このボンディング中に
クランパ17の挟付け力を2段目に切替える。ボンディ
ングが完了すると、C図に示すように、キャピラリ2を
高さh1まで上昇させる。このh1は、ワイヤ6に適正
なループを持たせ接続するのに必要な長さである。hは
h1+h2となる。
Next, as shown in Figure B, the capillary 2 is lowered and the clamper 17 is lowered to the height of the clamping force switching position h. When the capillary 2 descends onto the electrode 41a of the chip 41, the ultrasonic horn 15 generates ultrasonic waves to perform the first bonding. During this bonding, the clamping force of the clamper 17 is switched to the second stage. When bonding is completed, the capillary 2 is raised to a height h1, as shown in Figure C. This h1 is the length necessary for connecting the wire 6 with a proper loop. h becomes h1+h2.

【0023】次に、D図のように、キャピラリ2とクラ
ンパ17とを、X−Yテーブル12によりY軸方向に電
極部42b上方への移動と同時に、下降する。このとき
、E図に示すように、クランパ17はキャピラリ2より
速く所定位置への下降を完了させる。この状態のクラン
パ17の高さh2は、距離h3とh4との和になってい
る。ワイヤ6はキャピラリ2の下方に押出され、ワイヤ
湾曲部6fの長さは、適正なループを持たせて接続する
のに必要な長さh1にh4が足された長さとなる。
Next, as shown in FIG. D, the capillary 2 and clamper 17 are moved upward in the Y-axis direction by the X-Y table 12 and simultaneously lowered. At this time, as shown in Figure E, the clamper 17 completes its descent to the predetermined position faster than the capillary 2. The height h2 of the clamper 17 in this state is the sum of the distances h3 and h4. The wire 6 is pushed out below the capillary 2, and the length of the wire curved portion 6f is equal to the length h4 added to the length h1 necessary for connection with a proper loop.

【0024】ついで、F図のようにキャピラリ2を外部
リード42aの電極部42b上に下降し、超音波ホーン
15により超音波発振させ第2ボンディングをし、ワイ
ヤ6のループ6bを形成する。キャピラリ2とクランパ
17は距離h2としており、双方間のワイヤ6には曲り
はない。E図において、クランパ17とキャピラリ2間
にワイヤ6のたるみが発生しても、キャピラリ2のみが
h4長さ下降することにより、たるみを伸ばすことがで
きる。
Next, as shown in Fig. F, the capillary 2 is lowered onto the electrode portion 42b of the external lead 42a, and the ultrasonic horn 15 generates ultrasonic waves to perform second bonding, thereby forming the loop 6b of the wire 6. The distance between the capillary 2 and the clamper 17 is h2, and there is no bend in the wire 6 between the two. In Fig. E, even if the wire 6 is slack between the clamper 17 and the capillary 2, the slack can be lengthened by lowering only the capillary 2 by a length h4.

【0025】引続き、G図のように、キャピラリ2をワ
イヤ6が突出長さmになる高さまで上昇させてから、ク
ランパ17も共に上昇を始めさせる。この突出長さmは
、ワイヤ6に球体6aを形成するために必要な長さであ
る。 こうして、ワイヤ6は第2ボンディング部上で引切られ
る。さらに、H図のように、クランパ17とキャビティ
2とを等距離を保ったまま上昇させ、トーチ30により
ワイヤ6に球体6aを形成する。
Subsequently, as shown in Fig. G, after the capillary 2 is raised to a height where the wire 6 has a protruding length m, the clamper 17 is also started to rise. This protrusion length m is the length necessary to form the sphere 6a on the wire 6. In this way, the wire 6 is cut off on the second bonding part. Further, as shown in Figure H, the clamper 17 and the cavity 2 are raised while maintaining the same distance, and the torch 30 forms a sphere 6a on the wire 6.

【0026】このように、一連の動作により、ワイヤボ
ンディングの1サイクルが施される。
In this manner, one cycle of wire bonding is performed through a series of operations.

【0027】なお、上記実施例では、半導体チップ41
と外部リード42aとのワイヤボンディングを行ったが
、これに限らず、他の種の電子部品相互間など被接続物
のワイヤボンディングに適用できるものである。
Note that in the above embodiment, the semiconductor chip 41
Although wire bonding is performed between the external lead 42a and the external lead 42a, the present invention is not limited to this, and can be applied to wire bonding between other types of electronic components and other objects to be connected.

【0028】また、上記実施例では、キャピラリ2及び
クランパ17の上下動駆動手段として、電動機を駆動源
とする機構によったが、これに限らず、例えばエアシリ
ンダを駆動源とする機構によってもよい。
Further, in the above embodiment, a mechanism using an electric motor as a driving source is used as the means for vertically moving the capillary 2 and the clamper 17, but the mechanism is not limited to this, and a mechanism using an air cylinder as a driving source may also be used. good.

【0029】[0029]

【発明の効果】以上のように、この発明によれば、ボン
ディングサイクル動作中は、ワイヤを常にクランパによ
り挟付けており、工程の初期の第1ボンディング前はク
ランパを弱い挟付け力にし、この後は強い挟付け力にし
たので、挟付けの衝撃がなくなり、ワイヤの異常変形が
なくされる。また、第2ボンディングする際に、クラン
パの所定高さ位置への下降完了に対し、キャピラリの下
降完了のタイミングを遅らせたので、ワイヤの適正なル
ープが形成されて接続ができ、ワイヤのループの中間部
が一方の被接続物に接触短絡したり、第1ボンディング
部上でワイヤの切断などがなくされる。さらに、第2ボ
ンディング後、キャピラリの上昇開始に対しクランパの
上昇開始を遅らせ、キャピラリの上昇を途中停止しない
ようにしたので、キャピラリの下方に安定した長さのワ
イヤ突出部を作ることができるとともに、ワイヤボンデ
ィングの1サイクル時間が短縮される。こうして、ワイ
ヤボンディングの品質及び生産性が向上される。
As described above, according to the present invention, the wire is always clamped by the clamper during the bonding cycle operation, and the clamper is set to a weak clamping force before the first bonding at the beginning of the process. After that, a strong clamping force was applied, which eliminates the impact of clamping and eliminates abnormal deformation of the wire. In addition, when performing the second bonding, the timing of the completion of the capillary's descent was delayed relative to the completion of the descent of the clamper to the predetermined height position, so that a proper loop of the wire was formed and the connection was possible. This eliminates the possibility of the intermediate portion contacting one of the objects to be connected and short-circuiting, or cutting the wire on the first bonding portion. Furthermore, after the second bonding, the start of the clamper's rise is delayed relative to the start of the capillary's rise, so that the capillary's rise does not stop halfway, making it possible to create a wire protrusion of a stable length below the capillary. , one cycle time of wire bonding is shortened. In this way, the quality and productivity of wire bonding is improved.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】この発明によるワイヤボンディング装置の一実
施例の概要構成図である。
FIG. 1 is a schematic configuration diagram of an embodiment of a wire bonding apparatus according to the present invention.

【図2】図1のクランパの斜視図である。FIG. 2 is a perspective view of the clamper of FIG. 1;

【図3】図1の装置によるワイヤボンディング方法の動
作説明図である。
FIG. 3 is an explanatory diagram of the operation of the wire bonding method using the apparatus of FIG. 1;

【図4】従来のワイヤボンディング装置の要部構成図で
ある。
FIG. 4 is a configuration diagram of main parts of a conventional wire bonding device.

【図5】図4の装置によるワイヤボンディング方法の動
作説明図である。
FIG. 5 is an explanatory diagram of the operation of the wire bonding method using the apparatus of FIG. 4;

【図6】従来の方法による第1及び第2のボンディング
部間のワイヤのループ形成を示す説明図である。
FIG. 6 is an explanatory diagram showing the formation of a wire loop between the first and second bonding parts by a conventional method.

【図7】図6のワイヤの短小ループの場合の第1ボンデ
ィング部上でのワイヤの折れ曲り切断事故を示す説明図
である。
7 is an explanatory diagram showing an accident of bending and cutting the wire on the first bonding portion in the case of the short and small loop of the wire in FIG. 6; FIG.

【図8】従来の方法によるクランプ手段の挟付けで、ワ
イヤに生じたくびれ部を示す平面図である。
FIG. 8 is a plan view showing a constriction formed in the wire due to clamping using a conventional method.

【符号の説明】[Explanation of symbols]

2    キャピラリ 6    ワイヤ 6a    球体 6b    適正なループ 11    ボンディングヘッド本体 12    X−Yテーブル 15    超音波ホーン 17    クランパ 18    支持腕 20    第1Z軸用電動機 21    第1上下動伝達手段 22    第2Z軸用電動機 23    第2上下動伝達手段 29    ワイヤスプール 41    半導体チップ 42    リードフレーム 42a   外部リード 2 Capillary 6 Wire 6a Sphere 6b Proper loop 11 Bonding head body 12 X-Y table 15 Ultrasonic horn 17 Clamper 18 Support arm 20 1st Z-axis electric motor 21 First vertical motion transmission means 22 2nd Z-axis electric motor 23 Second vertical motion transmission means 29 Wire spool 41 Semiconductor chip 42 Lead frame 42a External lead

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  X−Yテーブル上のボンディングヘッ
ド本体に上下動可能に支持された超音波ホーンの先端に
固定されていて、第1上下動駆動手段により上昇、下降
されるようにしており、上方からのワイヤを貫通させた
キャピラリ、このキャピラリの上方に配置され、上記ボ
ンディングヘッド本体に上下動可能に支持された支持腕
の先端に固定されていて、第2上下動駆動手段により上
昇、下降されるようにしており、上方のワイヤスプール
から引出されたワイヤが通され、上記キャピラリに導く
クランパを備え、このクランパは弱、強の2段階の挟付
け力に切替えられるようにしていて、常にワイヤを挟付
けるようにしてあり、ボンディングサイクル動作におい
て、初期でのキャピラリが被接続物の第1ボンド点上に
下降するまでは、上記クランパは弱い挟付け力でワイヤ
を挟み、第1ボンディング以後では強い挟付け力に切替
えられてワイヤの挟付けを続行するようにしてあること
を特徴とするワイヤボンディング装置。
1. The ultrasonic horn is fixed to the tip of an ultrasonic horn that is vertically movably supported by a bonding head body on an X-Y table, and is raised and lowered by a first vertical drive means, A capillary through which a wire passes from above is fixed to the tip of a support arm which is disposed above the capillary and supported by the bonding head body so as to be movable up and down, and is raised and lowered by a second vertical drive means. The wire pulled out from the upper wire spool is passed through and is equipped with a clamper that guides it to the capillary, and this clamper can be switched to two levels of clamping force, weak and strong, so that During the bonding cycle operation, the clamper clamps the wire with a weak clamping force until the initial capillary descends onto the first bonding point of the object to be connected. Now, there is a wire bonding device characterized in that the clamping force is switched to a strong clamping force to continue clamping the wire.
【請求項2】  所定高さ位置のクランパによりワイヤ
を弱い挟付け力で挟み、このクランパから下方に所定距
離にキャピラリが位置され、キャピラリの下部にはワイ
ヤの球体が形成されてあり、クランパとキャピラリを被
接続物の第1ボンド点上方位置にする第1工程と、ワイ
ヤを弱い挟付け力で挟んだクランパを所定位置に下降し
、キャピラリを上記第1ボンド点上に下降し、第1ワイ
ヤボンディングする第2工程と、上記第1ワイヤボンデ
ィング中にクランパを強い挟付け力に切替え、第1ボン
ディング後キャピラリをワイヤが適正ループを形成する
に要する長さに相当する高さまで上昇させる第3工程と
、キャピラリとクランパを第2ボンド点上方位置に水平
移動すると同時に、双方を下降させ、クランパの所定高
さ位置への下降完了に対し、キャピラリの第2ボンド点
への下降完了タイミングを遅らせる第4工程と、キャピ
ラリが第2ボンド点に下降した状態で第2ボンディング
をする第5工程と、第2ボンディング後キャピラリを上
昇開始し、キャピラリの下方にワイヤが所定長さ出た時
点で、クランパを上昇開始してワイヤを第2ボンディン
グ部上で引切る第6工程と、キャピラリとクランパを第
6工程の距離を保ったまま所定高さ位置に上昇し、キャ
ピラリ下方から出たワイヤに球体を形成する第7工程と
によるワイヤボンディング方法。
2. The wire is clamped with a weak clamping force by a clamper positioned at a predetermined height, a capillary is positioned below the clamper at a predetermined distance, a ball of wire is formed at the bottom of the capillary, and the wire is clamped with a weak clamping force. A first step of placing the capillary above the first bonding point of the object to be connected, lowering the clamper holding the wire with a weak clamping force to a predetermined position, lowering the capillary above the first bonding point, and lowering the capillary to the first bonding point. A second step of wire bonding, and a third step of switching the clamper to strong clamping force during the first wire bonding and raising the capillary after the first bonding to a height corresponding to the length required for the wire to form a proper loop. In the process, the capillary and clamper are moved horizontally to a position above the second bond point, and both are lowered at the same time, and the timing of completion of the capillary's descent to the second bond point is delayed relative to the completion of descent of the clamper to a predetermined height position. A fourth step, a fifth step of performing second bonding with the capillary lowered to the second bonding point, and a fifth step of starting to ascend the capillary after the second bonding, and when a predetermined length of wire has come out below the capillary, The sixth step is to start raising the clamper and cut the wire above the second bonding part, and the capillary and the clamper are raised to a predetermined height position while maintaining the distance in the sixth step, and a sphere is attached to the wire coming out from below the capillary. A wire bonding method according to a seventh step of forming.
JP3138162A 1991-05-13 1991-05-13 Wire bonding apparatus and wire bonding method Expired - Lifetime JP2539963B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3138162A JP2539963B2 (en) 1991-05-13 1991-05-13 Wire bonding apparatus and wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3138162A JP2539963B2 (en) 1991-05-13 1991-05-13 Wire bonding apparatus and wire bonding method

Publications (2)

Publication Number Publication Date
JPH04336440A true JPH04336440A (en) 1992-11-24
JP2539963B2 JP2539963B2 (en) 1996-10-02

Family

ID=15215475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3138162A Expired - Lifetime JP2539963B2 (en) 1991-05-13 1991-05-13 Wire bonding apparatus and wire bonding method

Country Status (1)

Country Link
JP (1) JP2539963B2 (en)

Also Published As

Publication number Publication date
JP2539963B2 (en) 1996-10-02

Similar Documents

Publication Publication Date Title
JPH0737922A (en) Wire bonding
JP2007512714A (en) Low loop height ball bonding method and apparatus
US4068371A (en) Method for completing wire bonds
US7025243B2 (en) Bondhead for wire bonding apparatus
JP2002064118A (en) Wire bonding apparatus
JPH04336440A (en) Wire bonding apparatus and wire bonding method
JPH04334034A (en) Wire bonding method
TWI759711B (en) Needle thread forming method and wire bonding device
US5207786A (en) Wire bonding method
JPH05283463A (en) Wire bonding method
JP3856532B2 (en) Ball forming equipment for wire bonder
JP2894344B1 (en) Wire bonding method
JP3000817B2 (en) Wire bonding method
US4576322A (en) Machine for ultrasonically bonding wires to cavity-down integrated circuit packages
JP2765168B2 (en) Wire insertion method to capillary in wire bonder
TWI824354B (en) Wire bonding device, wire cutting method and program
JP2885242B1 (en) Wire bonding method and apparatus
JPH1116934A (en) Wire-bonding method
JPH09191023A (en) Wire bonder
JPS59181027A (en) Wire bonding device
JPH04251948A (en) Manufacture of semiconductor
JPH10107059A (en) Wire bonder
JPH06132344A (en) Wire bonding device
JPH0458694B2 (en)
JPH05226400A (en) Ball type wire bonding