JPH0433336A - Method and device for grinding wafer - Google Patents
Method and device for grinding waferInfo
- Publication number
- JPH0433336A JPH0433336A JP2141089A JP14108990A JPH0433336A JP H0433336 A JPH0433336 A JP H0433336A JP 2141089 A JP2141089 A JP 2141089A JP 14108990 A JP14108990 A JP 14108990A JP H0433336 A JPH0433336 A JP H0433336A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- load
- wafer
- waste liquid
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 239000002699 waste material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005498 polishing Methods 0.000 claims description 69
- 238000001514 detection method Methods 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims 2
- 238000003825 pressing Methods 0.000 claims 1
- 239000000975 dye Substances 0.000 abstract description 14
- 230000007423 decrease Effects 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 238000007373 indentation Methods 0.000 abstract 1
- 238000011002 quantification Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000008049 diazo compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用範囲
本発明はウェハーの研磨方法及び研磨装置に関し 更に
詳述するとウェハー研鳳 もしくは凸凹表面を有する基
板を平坦化するための半導体製造プロセスと製造装置で
ある。DETAILED DESCRIPTION OF THE INVENTION Scope of Industrial Application The present invention relates to a wafer polishing method and a polishing apparatus. More specifically, it relates to a wafer polishing process or a semiconductor manufacturing process and manufacturing apparatus for flattening a substrate having an uneven surface. .
従来の技術
近年のＵＬＳＩの超微細化に伴１．Ｘ、多層配線におけ
る微細配線加工技術では信頼性のある配線を形成するた
めに４よ より平坦な下地形状が求められていも −船
釣に（よ ２層目以降の絶縁膜の平坦化プロセスではＳ
ＯＧ （スピンオンク゛ラス）塗布法や、レジストエッ
チバック法等が用いられている力交これらの方法では欠
点も多い。ＳＯＧ塗布法ではＳＯＧ自体の膜質の耐水性
の弱さや完全なフラットにならないという問題点があり
、レジストエッチバック法ではプロセスの複雑化と低ス
ループットといった問題点がある。この問題を解決する
１手段として平坦化するために直接ウェハーを切削する
研磨法があム
発明が解決しようとする課題
実際に研磨技術は従来より存在した力交 絶縁膜の平坦
化工程で必要とされる１μｍより高い精度での加工は極
めて困難であるという問題点があっ九 本発明は上記問
題点を鑑へ 凹凸を有する基板の完全平坦化が精密に
高速かつ容易に出来るウェハーの研磨方法及び研磨装置
を提供することを目的とすム
課題を解決するための手段
本発明（よ 上述の課題を解決するたへ 凹凸を有する
基板上に特定の元素 特定の色素または特定の化学物質
を含む有機レジストもしくはシリカガラスを回転塗布す
る工程と、前記基板表面を研磨器表面に密着させ、研磨
液を用いて研磨する工程と、研磨排液を分析して前記元
素９色素、化学物質を検出もしくは分析する工程を含み
、 この検ム分析によって研磨終了点を判断すること、
及び前記研磨器の回転スピード、荷重圧力、荷重位置を
制御することを特徴としたウェハーの研磨方法であも
また本発明（上 研磨台と、このウェハー研磨台に対向
したウェハー研磨回転器と、前記ウェハー台表面に研磨
液を塗布する為のノズルとで本体は構成され 研磨廃液
を検出し 分析するための装置が付随し 前記ウェハー
研磨回転器とウェハー研磨台の密着点において圧力を不
均一にかける機能と、前記研磨廃液を検出し 前記元素
１色素あるいは化学物質の濃度によって、前記圧力、前
記ウェハー研磨器の回転スピード、荷重圧力、荷重位置
にフィードバックをかけ研磨することを特徴としたウェ
ハー研磨装置である。Conventional technology With the recent ultra-fine design of ULSI, 1. Although fine wiring processing technology for multilayer wiring requires a flatter base shape than 4 to form reliable wiring, it is difficult to planarize the insulating film from the second layer onwards (for boat fishing). S
The OG (spin-on-glass) coating method, the resist etch-back method, etc. are used, but these methods have many drawbacks. The SOG coating method has problems in that the SOG film itself has poor water resistance and is not completely flat, and the resist etchback method has problems in that the process is complicated and the throughput is low. One way to solve this problem is to use a polishing method that directly cuts the wafer for planarization.The problem that Amu's invention aims to solve is actually the polishing technology that has existed for a long time. There is a problem in that it is extremely difficult to process with a precision higher than 1 μm.The present invention has been developed in view of the above problems.
The present invention aims to provide a wafer polishing method and a polishing apparatus that can be performed quickly and easily. A step of spin-coating an organic resist or silica glass containing a dye or a specific chemical substance, a step of bringing the substrate surface into close contact with the surface of a polisher and polishing it using a polishing liquid, and a step of analyzing the polishing liquid and analyzing the polishing liquid. Including the process of detecting or analyzing element 9 dyes and chemical substances, and determining the polishing end point by this inspection analysis,
and a wafer polishing method characterized by controlling the rotational speed, load pressure, and load position of the polisher according to the present invention (a polishing table; a wafer polishing rotor facing the wafer polishing table; The main body is composed of a nozzle for applying polishing liquid to the surface of the wafer table, and is attached with a device for detecting and analyzing the polishing waste liquid, which makes the pressure uneven at the contact point between the wafer polishing rotor and the wafer polishing table. wafer polishing, which detects the polishing waste liquid and polishes by applying feedback to the pressure, the rotational speed of the wafer polisher, the load pressure, and the load position according to the concentration of the element 1 dye or chemical substance. It is a device.
作用
上記の研磨方法及び研磨装置により、ＵＬＳ Ｉにおけ
る凹凸を有するの完全平坦化が精密に 高速かつ容易に
出来も
実施例
（実施例１）
本発明を実施例に基づき図面を追って説明すもまず本発
明に用いた装置の概略図について示す。Effect: By using the above-mentioned polishing method and polishing apparatus, complete flattening of uneven surfaces in ULS I can be achieved precisely, quickly and easily.Example (Example 1) The present invention will be explained based on an example and with reference to the drawings. A schematic diagram of an apparatus used in the present invention is shown.
第１図は本発明の研磨システムのブロックダイアグラム
を示す。 １０は回転機構を有する研磨回転ａ １１
は基板（試料）を設置することのできる研磨台であり、
本体は大きく主にこの２つから構成されていム 又 研
磨台１１下部から研磨廃液を採取できるようになってお
り、廃液検出装置Ｉ２にて分析が可能となっている。ま
た本装置の特徴として廃液検出装置１２出カの電気信号
を研磨回転器１０にフィードバックをかけることができ
、廃液に含まれる特定の物質の濃度を検出する事により
研磨回転機１０の制動と、回転スピード、加重、加重位
置を自由に変化させることができる。FIG. 1 shows a block diagram of the polishing system of the present invention. 10 is a polishing rotary a having a rotation mechanism; 11
is a polishing table on which the substrate (sample) can be placed,
The main body is largely composed of these two parts, and the polishing waste liquid can be collected from the lower part of the polishing table 11, and can be analyzed by the waste liquid detection device I2. In addition, as a feature of this device, the electric signal output from the waste liquid detection device 12 can be fed back to the polishing rotary machine 10, and by detecting the concentration of a specific substance contained in the waste liquid, the polishing rotary machine 10 can be braked. Rotation speed, weight, and weight position can be changed freely.
第２図は研磨台本体の斜視図である。研磨台１１には６
〜８インチ基板１３が吸引設置可能となっている。研磨
台１１の上部には研磨台１１と平行に研磨回転機１０が
あり、基板１３の上面を正確にフィッティングできるよ
うに固定される。また研磨台１１の上部側面には研磨液
を任意に一定量 噴出できるノズル１４があり、多種の
研磨液を流すことができる。FIG. 2 is a perspective view of the polishing table main body. 6 on the polishing table 11
A ~8 inch board 13 can be installed by suction. A polishing rotary machine 10 is disposed above the polishing table 11 in parallel with the polishing table 11, and is fixed so that the upper surface of the substrate 13 can be accurately fitted. Further, there is a nozzle 14 on the upper side surface of the polishing table 11 that can spray a fixed amount of polishing liquid as desired, and various kinds of polishing liquids can be flowed.
研磨回転器１２は精密な回転機構を有すると共に 第２
図中に示されるＡ、 Ｂ、 Ｃ，Ｄの４方向寄りに
荷重をかけること可能である。この加重のかかり方を第
３図に示す。同図は６インチウェハー１３の表面であり
、Ａ、 Ｂ、 Ｃ，Ｄの４点に任意一定量の荷重を
かけることができ、削りむらを電気的にコントロールで
きる。The polishing rotator 12 has a precise rotation mechanism and a second
It is possible to apply loads in the four directions A, B, C, and D shown in the figure. FIG. 3 shows how this weight is applied. The figure shows the surface of a 6-inch wafer 13, and an arbitrary fixed amount of load can be applied to four points A, B, C, and D, and unevenness in cutting can be electrically controlled.
（実施例２）
本発明の実施例２として、凸凹表面を持つ基板表面を実
際に平坦化するプロセスを示す。特に本実施例では平坦
化プロセスを層間絶縁膜に適用した例を示す。第４図を
用いて平坦化が行われる過程を順を追って説明すも
同図（ａ）は６インチＳｉ基板４１に熱酸化膜４２を形
成り、ＡＩ配線（Ａｌ膜厚０．８μｍ） ４３をフォト
リソグラフィーとドライエツチング技術を用いて形成し
層間絶縁膜としてプラズマＣＶＤ法によるＴＥ０１
（テトラエトキシシラン） を用いた５ｉ０２膜４４
を２．５μｍ堆積する。この状態でｉ！、ＡＬ配線４３
厚さのだけ、５ｉ０２膜４４上には凹凸ができも 同図
（ｂ）は上記の構成に加えて平坦化の為のダミーレジス
ト４５を回転塗布したところであム このレジストには
終点検出用及び、回転研磨器制御用の色素（ジアゾ化合
物）が含まれていも同図（ｃ）は研磨の過程図を示し
同図（ｄ）は平坦化が完了した最終状態を示す。(Example 2) As Example 2 of the present invention, a process of actually planarizing a substrate surface having an uneven surface will be described. In particular, this embodiment shows an example in which the planarization process is applied to an interlayer insulating film. The planarization process will be explained step by step with reference to FIG. 4. In the figure (a), a thermal oxide film 42 is formed on a 6-inch Si substrate 41, and an AI wiring (Al film thickness 0.8 μm) 43 is formed. was formed using photolithography and dry etching technology, and TE01 was formed using plasma CVD as an interlayer insulating film.
5i02 film 44 using (tetraethoxysilane)
is deposited to a thickness of 2.5 μm. In this state i! , AL wiring 43
Due to its thickness, unevenness may occur on the 5i02 film 44. In addition to the above configuration, a dummy resist 45 for flattening is applied by rotation. , even if a dye (diazo compound) is included to control the rotary polisher, Figure (c) shows the polishing process diagram.
FIG. 4(d) shows the final state after flattening is completed.
研磨工程が行われる過程の詳細を第５図に示す。The details of the polishing process are shown in FIG.
第５図（ａ）は研磨廃液内にある特定色素の濃度（ここ
ではジアゾ化合物）、同図（ｂ）は回転研磨器の荷重の
大きさを示し それぞれの横軸には現在荷重のかかって
いるポイント（Ａ、Ｂ、Ｃ，Ｄ）即板 時間軸を示す。Figure 5 (a) shows the concentration of a specific dye (in this case, a diazo compound) in the polishing waste liquid, and Figure 5 (b) shows the magnitude of the load on the rotary polisher, with each horizontal axis showing the current load. Points (A, B, C, D) immediately indicate the time axis.
この実施例ではＡ、Ｂ、Ｃ，Ｄの点（第３回出参照）を
中心として順番に荷重がかかるようにプログラムされて
いる。In this embodiment, it is programmed to apply loads in order around points A, B, C, and D (see the 3rd entry).
先ず、均等に研磨回転器１０に荷重がかかるようにして
研磨しレジスト４５のみを削り落とす。First, polishing is performed so that a load is evenly applied to the polishing rotary device 10, and only the resist 45 is scraped off.
５ｉ０２膜４４の表面が出てきたところで（第４図（Ｃ
）参照）、レジスト４５の削られる割合が少なくなるた
めレジスト内より検出される色素が急激に減少する（図
中（イ）で示される）。この段階で荷重の大きさを減ら
し 均等に荷重をかける方法かぺ 荷重を変位的にかけ
る方法にかえも この時Ａ、Ｂ、Ｃ，Ｄに荷重のかかる
時間は３０秒であり、 ３０秒の間に流れた研磨廃液の
色素の量を定量する（図中（ロ）で示される）。この定
量した結果を２回目にＡ、Ｂ、Ｃ，Ｄに荷重がかかる大
きさにフィードバックをか（す、色素の濃度が濃いポイ
ントはど荷重をより多くかけるようにプログラミングし
ておく。この操作を研磨廃液内の色素が検出されなくな
るまで続けていけば 完全フラットな平面が達成される
。この状態が第４図（ｄ）であも
な耘 研磨剤のなかにはもちろんＨＦ系のエツチング液
を混ぜることも可能であるし 基板に塗布する有機レジ
ストの代わりに特定の元素、 特定の色素または特定の
化学物質を含むシリカガラスを回転塗布しても良いこと
は言うまでもない。When the surface of the 5i02 film 44 comes out (Fig. 4 (C)
)), as the rate at which the resist 45 is scraped decreases, the amount of dye detected from within the resist rapidly decreases (indicated by (a) in the figure). At this stage, you can reduce the size of the load and apply the load evenly.Alternatively, you can apply the load displacemently.At this time, the time the load is applied to A, B, C, and D is 30 seconds. Quantify the amount of dye in the polishing waste liquid that flowed during the process (indicated by (b) in the figure). This quantitative result is fed back to the magnitude of the load to be applied to A, B, C, and D in the second time.The program is programmed to apply a larger load to the point where the dye concentration is higher.This operation If this is continued until the dye in the polishing waste liquid is no longer detected, a completely flat surface will be achieved.This state is shown in Figure 4(d).Of course, an HF-based etching liquid is mixed in the polishing agent. It goes without saying that instead of the organic resist applied to the substrate, silica glass containing a specific element, a specific dye, or a specific chemical substance may be spin-coated.
更にこの技術は基板、 トレンチ等の平坦法としも広い
応用範囲があム
発明の効果
以上の説明から明らかなように 本発明によれは１．完
全平坦化ができる。２．工程がきわめて簡易にな７）。Furthermore, this technique has a wide range of applications as a flattening method for substrates, trenches, etc.As is clear from the above explanation, the present invention has the following advantages:1. Complete flattening is possible. 2. The process is extremely simple7).
３． プラズマを使用しないム 荷電粒子のダメージ
が無い。４．エツチング量が多いム 処理スピードは速
くなる（スルーブツト向上）。５．パターニン用マスク
や下地形状に依存しない平坦化ができる。3. No plasma is used; there is no damage from charged particles. 4. If the amount of etching is large, the processing speed will be faster (throughput improved). 5. Planarization can be performed without depending on the patterning mask or the underlying shape.
第１図は研磨システムのブロック医 第２図は研磨器本
体の斜視医 第３図は６インチウニ／’ｔ −表面医
第４図は平坦化が行われる工程匝 第５図は研磨工程が
行われる過程の詳細図である。
ＩＯ・・・研磨回転器 １１・・・研磨法 １２・・・
廃液検出装置 １３・・・基板、 １４・・・ノズノＬ
／、 ４１・・・６インチ基板、 ４２・・・熱酸化［
４３・・・ＡＬ配撒４４・・・５ｉ０２１１ ４５−＝
レジスト。
代理人の氏名 弁理士 粟野重孝 ほか１名第
第
図
図
第
図Figure 1 is a block diagram of the polishing system. Figure 2 is a perspective diagram of the polisher body. Figure 3 is a 6-inch sea urchin/'t-surface diagram.
FIG. 4 is a process diagram in which planarization is performed. FIG. 5 is a detailed view of the process in which a polishing process is performed. IO... Polishing rotator 11... Polishing method 12...
Waste liquid detection device 13... board, 14... nozzle L
/, 41...6 inch substrate, 42...thermal oxidation [
43...AL distribution 44...5i0211 45-=
Resist. Name of agent: Patent attorney Shigetaka Awano and one other person
Claims (4)
たは特定の化学物質を含む有機レジストもしくはシリカ
ガラスを回転塗布する工程と、前記基板表面を研磨器表
面に密着させ、研磨液を用いて研磨する工程と、研磨排
液を分析して前記元素、色素、化学物質を検出もしくは
分析する工程を含み、この検出、分析によって研磨終了
点を判断することを特徴としたウェハーの研磨方法。(1) A step of spin-coating an organic resist or silica glass containing a specific element, a specific dye, or a specific chemical substance onto a substrate having irregularities, and then bringing the substrate surface into close contact with the surface of a polisher and using a polishing liquid. A method for polishing a wafer, comprising the steps of: polishing the wafer by polishing the wafer; and detecting or analyzing the elements, pigments, and chemical substances by analyzing the polishing waste liquid, and determining the polishing end point based on the detection and analysis.
たは特定の化学物質を含む有機レジストもしくはシリカ
ガラスを回転塗布する工程と、前記基板表面を研磨器表
面に密着させ、研磨液を用いて研磨する工程と、研磨排
液を分析して前記元素、色素、化学物質を検出もしくは
分析する工程を含み、この検出、分析によって前記研磨
器の回転スピード、荷重圧力、荷重位置を制御すること
を特徴としたウェハーの研磨方法。(2) A step of spin-coating an organic resist or silica glass containing a specific element, a specific dye, or a specific chemical substance onto a substrate having irregularities, and bringing the substrate surface into close contact with the surface of a polisher, using a polishing liquid. and a step of analyzing the polishing liquid to detect or analyze the elements, pigments, and chemical substances, and by this detection and analysis, the rotation speed, load pressure, and load position of the polisher are controlled. A wafer polishing method featuring:
たウェハー研磨回転器と、前記ウェハー台表面に研磨液
を塗布する為のノズルとで本体は構成され、研磨廃液を
検出し、分析するための装置が付随したウェハー研磨装
置。(3) The main body is composed of a wafer polishing table, a wafer polishing rotator facing the wafer polishing table, and a nozzle for applying polishing liquid to the surface of the wafer table, and for detecting and analyzing polishing waste liquid. Wafer polishing equipment with attached equipment.
ェハー研磨回転器とウェハー研磨台の密着点において圧
力を不均一にかける機能と、研磨廃液を検出し、元素、
色素あるいは化学物質の濃度によって、前記圧力、前記
ウェハー研磨器の回転スピード、荷重圧力、荷重位置に
フィードバックをかけ研磨することを特徴としたウェハ
ー研磨装置。(4) The wafer polishing apparatus according to claim 3, which includes a function of applying pressure unevenly at the contact point between the wafer polishing rotor and the wafer polishing table, and detecting polishing waste liquid,
A wafer polishing apparatus characterized in that polishing is performed by applying feedback to the pressure, the rotational speed of the wafer polisher, the load pressure, and the load position depending on the concentration of a dye or a chemical substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14108990A JPH07105369B2 (en) | 1990-05-29 | 1990-05-29 | Wafer polishing method and polishing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14108990A JPH07105369B2 (en) | 1990-05-29 | 1990-05-29 | Wafer polishing method and polishing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0433336A true JPH0433336A (en) | 1992-02-04 |
| JPH07105369B2 JPH07105369B2 (en) | 1995-11-13 |
Family
ID=15283949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14108990A Expired - Fee Related JPH07105369B2 (en) | 1990-05-29 | 1990-05-29 | Wafer polishing method and polishing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105369B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584749A (en) * | 1995-01-13 | 1996-12-17 | Nec Corporation | Surface polishing apparatus |
| US6039635A (en) * | 1997-08-29 | 2000-03-21 | Nec Corporation | Surface polishing apparatus including a dresser |
| US6093088A (en) * | 1998-06-30 | 2000-07-25 | Nec Corporation | Surface polishing machine |
| US7387945B2 (en) * | 2004-05-11 | 2008-06-17 | Seiko Epson Corporation | Semiconductor chip, semiconductor device and electronic equipment including warpage control film, and manufacturing method of same |
| JP2010058196A (en) * | 2008-09-02 | 2010-03-18 | Nikon Corp | Method and apparatus for polishing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5874040A (en) * | 1981-09-04 | 1983-05-04 | エムイーエムシー エレクトロニック マテリアルズ，インコーポレーテッド | Method and device for controlling temperature for polishing wafer |
| JPS58155169A (en) * | 1982-03-11 | 1983-09-14 | Nec Corp | Polishing method of wafer |
| JPS63251164A (en) * | 1987-04-02 | 1988-10-18 | Sony Corp | Manufacture of semi-conductor device |
| JPH01136339A (en) * | 1987-11-24 | 1989-05-29 | Kurita Water Ind Ltd | Cleaning apparatus |
-
1990
- 1990-05-29 JP JP14108990A patent/JPH07105369B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5874040A (en) * | 1981-09-04 | 1983-05-04 | エムイーエムシー エレクトロニック マテリアルズ，インコーポレーテッド | Method and device for controlling temperature for polishing wafer |
| JPS58155169A (en) * | 1982-03-11 | 1983-09-14 | Nec Corp | Polishing method of wafer |
| JPS63251164A (en) * | 1987-04-02 | 1988-10-18 | Sony Corp | Manufacture of semi-conductor device |
| JPH01136339A (en) * | 1987-11-24 | 1989-05-29 | Kurita Water Ind Ltd | Cleaning apparatus |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584749A (en) * | 1995-01-13 | 1996-12-17 | Nec Corporation | Surface polishing apparatus |
| US6039635A (en) * | 1997-08-29 | 2000-03-21 | Nec Corporation | Surface polishing apparatus including a dresser |
| US6093088A (en) * | 1998-06-30 | 2000-07-25 | Nec Corporation | Surface polishing machine |
| US7387945B2 (en) * | 2004-05-11 | 2008-06-17 | Seiko Epson Corporation | Semiconductor chip, semiconductor device and electronic equipment including warpage control film, and manufacturing method of same |
| JP2010058196A (en) * | 2008-09-02 | 2010-03-18 | Nikon Corp | Method and apparatus for polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07105369B2 (en) | 1995-11-13 |
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| LAPS | Cancellation because of no payment of annual fees |