JPS58155169A - Polishing method of wafer - Google Patents
Polishing method of waferInfo
- Publication number
- JPS58155169A JPS58155169A JP57038545A JP3854582A JPS58155169A JP S58155169 A JPS58155169 A JP S58155169A JP 57038545 A JP57038545 A JP 57038545A JP 3854582 A JP3854582 A JP 3854582A JP S58155169 A JPS58155169 A JP S58155169A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- polished
- wax
- flat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はウェーハの表面の凹凸１！＆−絃云し１平坦な
無歪−面を得る研摩に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides unevenness on the surface of a wafer 1! The present invention relates to polishing to obtain a flat, distortion-free surface.
従来、ウェーハの表面を鏡面にするための研摩方法は、
ポリウレタン等力）らなる研摩布と研摩液で表向を研摩
することによって得られる。従来の方法では、表面に凹
凸を有するウエーノ）研摩すめ、ウェーハの表向は鏡面
になっても凹凸はなくならない欠点があった。＠１図に
従来法による研摩状１ｍを示す。Conventionally, the polishing method used to make the surface of a wafer mirror-like is
It is obtained by polishing the surface with an abrasive cloth made of polyurethane and a polishing solution. Conventional methods have the drawback that the wafer surface has irregularities, and even if the surface of the wafer is polished to a mirror surface, the irregularities do not disappear. Figure @1 shows a 1-meter polished surface obtained by the conventional method.
本発明省は１表向に凹凸を有するウェーハを研摩布と研
摩液で研摩する前にウェーハの表面の凹凸がすくするま
で、ウェーハより軟かいワックスまたはレジスト等の樹
脂を塗布した後で、′ｍ紀つ工−ハ表面を化学液および
＃に粒子）＞らなる研摩液により＆摩することにより、
表面の凹凸を除去し平坦な無歪ｆｉｌＩ向を得る研摩方
法を提供する。The Ministry of the Invention proposes the following method: 1. Before polishing a wafer with surface irregularities using a polishing cloth and a polishing solution, after applying a resin such as wax or resist that is softer than the wafer until the irregularities on the wafer surface are smoothed out, By polishing the surface with a chemical liquid and a polishing liquid consisting of particles,
Provided is a polishing method for removing surface irregularities and obtaining a flat, strain-free filtration surface.
表向に凹凸を有するウェーハを化学液と砥粒からなるｆ
ｉｒ摩液と研摩布により、表面の凹凸を除去し表面にす
る際に、前記研雄敷に市いた化学液に対し、耐食性があ
りウェーハより軟、０）いワックス談たはレジスト等の
樹脂を前記ウェーハの表面の凹凸がなく、平坦に塗布し
た後で前［＃ｒ摩液で研摩した場合、表向に１ｉｌｉ布
したワックスまたはレジスト等の樹脂は研摩液中の化学
液には不活性なため砥粒のみにより研摩され、つ１−ハ
は砥粒による機械的研摩と化学液によるエツチングの２
方法により研摩される。ワックスまたはレジス′ト等の
樹脂はウェーハより軟質であるためワックスまたはレジ
スト等の樹脂の方がウェーハより速＜ｆｄＴ摩される。A wafer with surface irregularities is processed using f
When surface irregularities are removed using an IR polishing liquid and a polishing cloth, a resin such as wax or resist, which is corrosion resistant and softer than the wafer, is resistant to the chemical liquid used in the polishing process. If the surface of the wafer is coated flat with no unevenness and then polished with a polishing solution, the resin such as wax or resist coated on the surface will be inert to the chemical solution in the polishing solution. Therefore, it is polished only by abrasive grains, and the second step is mechanical polishing by abrasive grains and etching by chemical liquid.
Polished by method. Since the resin such as wax or resist is softer than the wafer, the resin such as wax or resist is rubbed faster than the wafer.
しかし、ウェーハは研＃Ｉ液中の化学液ｉこよるエツチ
ング作用によりさ゛らに研摩される結果、ワックスまた
はレジスト等の研＊＝ｙとウェーハの研摩速度は等しく
なり、ウェーハの凹凸を除去し、表向が平坦な無歪鏡面
が得られる。However, as a result of the wafer being further polished by the etching action of the chemical solution i in the polishing #I solution, the polishing speed of the wafer becomes equal to that of wax or resist polishing*=y, and the unevenness of the wafer is removed. A distortion-free mirror surface with a flat surface can be obtained.
従って、表面に凹凸があるウェーハを研摩する場合、本
発明の方＠を用いると、表面の凹凸はなくなり、平坦な
無歪鏡面が得られる利点がある。Therefore, when polishing a wafer with an uneven surface, using the method of the present invention has the advantage that the unevenness on the surface can be eliminated and a flat, distortion-free mirror surface can be obtained.
次に、本発明の一実施例について説明する。Next, one embodiment of the present invention will be described.
ある表面にスピンコードしたウェーハ断面図を第２図に
示す。A cross-sectional view of a wafer with spin coding on one surface is shown in FIG.
規定からなる研摩液で研摩布は８ＵＢＡ）ｉ−１（商品
名）で圧力１１ｏｇ／ａＡで研摩する。６０分研摩後表
面の凹凸は０．１μｍのウェーハが得られた。The polishing cloth is polished with a polishing solution consisting of the specified 8UBA)i-1 (trade name) at a pressure of 11 og/aA. After 60 minutes of polishing, a wafer with surface irregularities of 0.1 μm was obtained.
以上説明したよう齋こ１本発明による研摩方法を用いる
と、無歪鏡面が得られると同時に表面の凹凸が除去でき
る。尚１本実施例において、表面塗布剤として、ステッ
キワックス（商品名）を用いたが１例えばＡＺ１３５０
（商品名）というレジストを用いても良くまた。化学液
として水酸化カリウムを用いたが、ウェーハの１ｔＭ類
により水酸化ナトリウム、水酸化ア′ンモニワム等を用
いても良い。As explained above, by using the polishing method according to the present invention, a distortion-free mirror surface can be obtained and at the same time, surface irregularities can be removed. In this example, Stick Wax (trade name) was used as the surface coating agent. For example, AZ1350
You may also use a resist called (product name). Although potassium hydroxide was used as the chemical liquid, sodium hydroxide, ammonium hydroxide, etc. may also be used depending on the 1tM of the wafer.
第１図は従来の研摩方法により、研摩する時のウェーハ
断面形状を示す。図中の値組はある時間研摩した時の状
態を示す。
第２図は本発明り研摩が却こより研摩する時のウェーハ
の断面形状を示し、１はウェーハ％２は表面に塗布した
ワックスを示す。図中の破＃は研摩後の状態を示す。FIG. 1 shows the cross-sectional shape of a wafer when polished by a conventional polishing method. The value set in the figure indicates the state after polishing for a certain period of time. FIG. 2 shows the cross-sectional shape of a wafer when polished according to the present invention, where 1 indicates the wafer percentage and 2 indicates the wax applied to the surface. The broken # in the figure indicates the state after polishing.
Claims (1)
摩液と研摩布により、表面の凹凸を除去し鏡面にする際
に、前記研摩液に用いた化学液に対し、耐食性がありか
つ、ウェーハより軟η）いワックスまたはレジスト等の
樹脂を前記ウェーハの異面に凹凸がなく平坦に塗布した
恢で、＆面を前記研３１７！液で研摩することを特徴と
するウェーハ研摩方法。When a wafer with an uneven surface is polished to a mirror surface by removing the unevenness on the surface using a polishing liquid consisting of a chemical liquid and abrasive grains and a polishing cloth, the wafer is After applying a softer resin such as wax or resist to the different surface of the wafer, the & surface is polished 317! A wafer polishing method characterized by polishing with a liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57038545A JPS58155169A (en) | 1982-03-11 | 1982-03-11 | Polishing method of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57038545A JPS58155169A (en) | 1982-03-11 | 1982-03-11 | Polishing method of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58155169A true JPS58155169A (en) | 1983-09-14 |
Family
ID=12528254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57038545A Pending JPS58155169A (en) | 1982-03-11 | 1982-03-11 | Polishing method of wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58155169A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0433336A (en) * | 1990-05-29 | 1992-02-04 | Matsushita Electric Ind Co Ltd | Method and device for grinding wafer |
| JP2003059874A (en) * | 2001-08-10 | 2003-02-28 | Hitachi Chem Co Ltd | Method of polishing board |
| KR100429650B1 (en) * | 2001-09-21 | 2004-05-03 | 이석희 | Method for processing surface roughness of stereolithography parts |
| KR100472084B1 (en) * | 2002-10-25 | 2005-03-08 | 이석희 | Device for improving the surface roughness of stereolithography parts |
| JP2010058196A (en) * | 2008-09-02 | 2010-03-18 | Nikon Corp | Method and apparatus for polishing |
| JP2013212581A (en) * | 2013-07-24 | 2013-10-17 | Nikon Corp | Polishing method |
-
1982
- 1982-03-11 JP JP57038545A patent/JPS58155169A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0433336A (en) * | 1990-05-29 | 1992-02-04 | Matsushita Electric Ind Co Ltd | Method and device for grinding wafer |
| JP2003059874A (en) * | 2001-08-10 | 2003-02-28 | Hitachi Chem Co Ltd | Method of polishing board |
| KR100429650B1 (en) * | 2001-09-21 | 2004-05-03 | 이석희 | Method for processing surface roughness of stereolithography parts |
| KR100472084B1 (en) * | 2002-10-25 | 2005-03-08 | 이석희 | Device for improving the surface roughness of stereolithography parts |
| JP2010058196A (en) * | 2008-09-02 | 2010-03-18 | Nikon Corp | Method and apparatus for polishing |
| JP2013212581A (en) * | 2013-07-24 | 2013-10-17 | Nikon Corp | Polishing method |
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