JPH04330749A - Semiconductor inspection device - Google Patents
Semiconductor inspection deviceInfo
- Publication number
- JPH04330749A JPH04330749A JP3938391A JP3938391A JPH04330749A JP H04330749 A JPH04330749 A JP H04330749A JP 3938391 A JP3938391 A JP 3938391A JP 3938391 A JP3938391 A JP 3938391A JP H04330749 A JPH04330749 A JP H04330749A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- bump
- inspection device
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000007689 inspection Methods 0.000 title claims description 25
- 239000004020 conductor Substances 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 238000012360 testing method Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 20
- 239000011247 coating layer Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000007767 bonding agent Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000007769 metal material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、液晶表示素子等の半
導体の検査に用いられる半導体検査装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor testing device used for testing semiconductors such as liquid crystal display devices.
【０００２】0002
【従来の技術】近年、半導体の高集積度技術とその高密
度実装技術の進展に伴い、半導体装置の電極数が増加し
、そのピツチも年々密度をあげている。このような技術
進歩により、ベアチツプを直接回路基板に実装する場合
等のために半導体装置の検査技術の向上が要求されてい
る。そして、従来から、半導体装置の検査には針式のメ
カニカル・プローブが用いられている。2. Description of the Related Art In recent years, with the progress of high-integration semiconductor technology and its high-density packaging technology, the number of electrodes in semiconductor devices has increased, and the density of the electrodes has also increased year by year. Due to such technological advances, there is a demand for improvement in semiconductor device inspection technology in cases where bare chips are directly mounted on circuit boards. Conventionally, needle-type mechanical probes have been used to test semiconductor devices.
【０００３】0003
【発明が解決しようとする課題】しかしながら、上記メ
カニカル・プローブは、検査対象の半導体装置の電極数
等が高密度になると、検査による接触回数の限度が１〜
２万回程度と寿命が短く、また検査時に接触部の針を挟
むブレードと針とが簡単に位置ずれを起こしたり、針が
曲折したり、時にはシヨートしたりするという問題を有
している。また、接触時に圧力が加わるため針やブレー
ドが半導体装置のダイパツドに突き刺さつて損傷を与え
ることもあり、検査時に製品不良が生じるという問題も
有している。さらに、インピーダンスの整合を針に求め
行うことが困難であるために複雑な構造を採用するのが
難しいという問題を有している。[Problems to be Solved by the Invention] However, when the number of electrodes of the semiconductor device to be tested becomes high, the limit of the number of contacts made by the mechanical probe during testing is 1 to 1.
It has a short lifespan of about 20,000 cycles, and it also has the problem that the needle and the blade that sandwich the needle at the contact part easily become misaligned during inspection, and the needle bends or sometimes shoots. Furthermore, since pressure is applied during contact, the needle or blade may pierce and damage the die pad of the semiconductor device, resulting in product defects during inspection. Furthermore, since it is difficult to match the impedance of the needle, it is difficult to adopt a complicated structure.
【０００４】このような問題を解決するために、例えば
ベース基板に微細孔を形成し、この微細孔に導電物質を
充填することにより得られる半導体検査装置が提案され
ている（特願平２−９５８９９号公報）。しかし、この
ような検査装置は、その構成上、ベース基板となる材料
の材質や厚みに制約を受ける。すなわち、ベース基板が
、微細孔を形成する際に行われる選択的なエツチングの
不可能な材質であつたり、その材料の厚みが厚くて微細
孔の形成が不可能な場合がある。したがつて、所定の構
造に形成するには材料やその厚みにかなりの制約があり
、その結果、得られる製品の機械的な強度面にも制限が
加えられることになる。In order to solve these problems, a semiconductor inspection device has been proposed, which is obtained by forming micro holes in a base substrate and filling the micro holes with a conductive material. 95899). However, due to its configuration, such an inspection device is limited by the material and thickness of the base substrate. That is, the base substrate may be made of a material that cannot be selectively etched when forming micropores, or the material may be so thick that it is impossible to form micropores. Therefore, there are considerable restrictions on the material and its thickness in order to form it into a predetermined structure, and as a result, there are also restrictions on the mechanical strength of the resulting product.
【０００５】さらに、近年の半導体装置は高周波型に進
む傾向が顕著であるが、従来の検査装置はこの高周波型
に対する対応策が充分ではなく、その検査における信頼
性が低いのが現状である。[0005]Furthermore, in recent years, there has been a remarkable tendency for semiconductor devices to use high-frequency devices, but conventional inspection equipment has not been adequately prepared for this high-frequency type, and the reliability of such inspections is currently low.
【０００６】この発明は、このような事情に鑑みなされ
たもので、微小電極の半導体装置の検査が可能で、信頼
性が高く、しかも検査時の位置合わせの容易な半導体検
査装置の提供をその目的とする。The present invention was made in view of the above circumstances, and it is an object of the present invention to provide a semiconductor testing device that is capable of testing microelectrode semiconductor devices, is highly reliable, and is easy to align during testing. purpose.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
め、この発明の半導体検査装置は、絶縁性基板の片面に
導体によつて所定の検査回路パターンが形成され、上記
検査回路パターンの形成された絶縁性基板面に誘電体層
が形成され、所定の導体の部分の表面が露出するよう上
記誘電体層が部分的に除去され、上記導体の露出部分に
導通部が形成され、上記導通部上にバンプ状金属製突出
部が形成され、上記絶縁性基板の他面に導体層が形成さ
れているという構成をとる。[Means for Solving the Problems] In order to achieve the above object, a semiconductor testing device of the present invention has a predetermined test circuit pattern formed by a conductor on one side of an insulating substrate, and the formation of the test circuit pattern. A dielectric layer is formed on the surface of the insulating substrate, and the dielectric layer is partially removed to expose the surface of a predetermined conductor portion, and a conductive portion is formed in the exposed portion of the conductor. A bump-shaped metal protrusion is formed on the insulating substrate, and a conductor layer is formed on the other surface of the insulating substrate.
【０００８】[0008]
【作用】すなわち、この発明の半導体検査装置は、絶縁
性基板の片面に導体によつて検査回路パターンが形成さ
れ、さらに誘電体層が形成されている。そして、上記導
体の所定の部分が露出するよう誘電体層が部分的に除去
されている。この部分的除去により露出した導体に導通
部およびバンプ状金属製突出部が形成されている。この
ため、従来の電極部に比べて微小な形成が可能となる。
したがつて、検査対象となる半導体の電極部との確実な
接触が実現できる。また、絶縁性フイルムの他面に導体
層が形成されているため、高周波型の半導体の検査にも
充分に対応することができる。そして、電極部となるバ
ンプ状金属製突出部が検査回路パターン上に形成されて
いるため、回路の形状認識が容易である。したがつて、
検査対象物との位置合わせが簡単かつ容易となる。That is, in the semiconductor testing device of the present invention, a test circuit pattern is formed by a conductor on one side of an insulating substrate, and a dielectric layer is further formed. Then, the dielectric layer is partially removed so that a predetermined portion of the conductor is exposed. A conductive portion and a bump-shaped metal protrusion are formed on the conductor exposed by this partial removal. Therefore, it is possible to form a smaller electrode portion than in conventional electrode portions. Therefore, reliable contact with the electrode portion of the semiconductor to be inspected can be achieved. In addition, since a conductor layer is formed on the other side of the insulating film, it can be fully used for high-frequency semiconductor inspections. Further, since the bump-shaped metal protrusions serving as electrode portions are formed on the test circuit pattern, the shape of the circuit can be easily recognized. Therefore,
Positioning with the object to be inspected becomes simple and easy.
【０００９】つぎに、この発明を詳しく説明する。Next, the present invention will be explained in detail.
【００１０】この発明の半導体検査装置は、絶縁性基板
と、上記絶縁性基板の片面に形成される導体と、この導
体からなる検査回路パターンを被覆する誘電体層と、上
記露出した導体に形成される導通部およびこの導通部上
に形成されるバンプ状金属製突出部と、上記絶縁性基板
の他面に形成される導体層とから構成される。The semiconductor testing device of the present invention includes an insulating substrate, a conductor formed on one side of the insulating substrate, a dielectric layer covering a test circuit pattern made of the conductor, and a dielectric layer formed on the exposed conductor. A conductive portion is formed on the conductive portion, a bump-shaped metal protrusion is formed on the conductive portion, and a conductor layer is formed on the other surface of the insulating substrate.
【００１１】上記絶縁性基板としては、絶縁性フイルム
等の電気絶縁性を有する材料であれば、特に限定するも
のではなく、無機材料，有機材料を問わない。なお、上
記絶縁性フイルムには、通常のフイルムはもちろん、厚
みが２５０μｍ以上のシートおよびボードをも含む趣旨
である。The insulating substrate is not particularly limited as long as it is an electrically insulating material such as an insulating film, and may be an inorganic material or an organic material. Note that the above-mentioned insulating film is intended to include not only ordinary films but also sheets and boards having a thickness of 250 μm or more.
【００１２】上記検査回路パターンを構成する導体の形
成材料としては、例えば、金，銀，銅，ニツケル，コバ
ルト等の各種金属、またはこれらを主成分とする各種合
金等の導電材料があげられる。Examples of the material for forming the conductor constituting the test circuit pattern include conductive materials such as various metals such as gold, silver, copper, nickel, and cobalt, and various alloys containing these as main components.
【００１３】上記誘電体層形成材料としては、電気絶縁
性を有する誘電物質であれば特に限定するものではない
。例えば、ポリエステル系樹脂，エポキシ系樹脂，ウレ
タン系樹脂，ポリエチレン系樹脂，ポリスチレン系樹脂
，ポリアミド系樹脂，ポリイミド系樹脂，アクリロニト
リル−ブタジエン−スチレン（ＡＢＳ）共重合体系樹脂
，ポリカーボネート系樹脂，シリコーン系樹脂等の熱硬
化性樹脂や熱可塑性樹脂等があげられる。なかでも、誘
電率，耐熱性および機械的強度の観点からポリイミド系
樹脂を用いることが好ましい。The material for forming the dielectric layer is not particularly limited as long as it is a dielectric material having electrical insulation properties. For example, polyester resin, epoxy resin, urethane resin, polyethylene resin, polystyrene resin, polyamide resin, polyimide resin, acrylonitrile-butadiene-styrene (ABS) copolymer resin, polycarbonate resin, silicone resin. Examples include thermosetting resins and thermoplastic resins such as . Among these, it is preferable to use polyimide resin from the viewpoints of dielectric constant, heat resistance, and mechanical strength.
【００１４】上記導通部およびバンプ状金属製突出部の
形成材料としては、銅，ニツケル，金，銀，クロム，ロ
ジウム，タングステン等各種金属またはこれらを主成分
とする各種合金等があげられる。[0014] Examples of the material for forming the conductive portion and the bump-shaped metal protrusion include various metals such as copper, nickel, gold, silver, chromium, rhodium, and tungsten, and various alloys containing these as main components.
【００１５】上記絶縁性基板の他面側に形成される導体
層形成材料としては、銅，金，ニツケル等各種金属また
はこれらを主成分とする各種合金等があげられる。これ
らのなかでも、特に銅が好適に用いられる。The material for forming the conductor layer formed on the other side of the insulating substrate includes various metals such as copper, gold, and nickel, and various alloys containing these as main components. Among these, copper is particularly preferably used.
【００１６】つぎに、この発明を実施例にもとづいて詳
しく説明する。Next, the present invention will be explained in detail based on examples.
【００１７】[0017]
【実施例】図１はこの発明の半導体検査装置の一実施例
を示している。１は絶縁性フイルムであり、この絶縁性
フイルム１の片面に複数本の線状導体２からなる検査回
路パターンが形成されている。上記線状導体２からなる
検査回路パターンが形成された絶縁性フイルム１面には
誘電体層３が形成されている。そして、複数の線状導体
２を横切るように上記誘電体膜３が除去され四角形状の
溝７が形成されている。上記溝７内に露出する各線状導
体２の表面部分には、それぞれ導通部８が形成され、こ
の導通部８上にはバンプ状金属製突出部６が形成されて
いる。一方、絶縁性フイルム１の他面側には接着剤層４
を介して導体層５が形成されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of a semiconductor inspection apparatus according to the present invention. Reference numeral 1 denotes an insulating film, and on one side of the insulating film 1, a test circuit pattern consisting of a plurality of linear conductors 2 is formed. A dielectric layer 3 is formed on one surface of the insulating film on which the test circuit pattern made of the linear conductor 2 is formed. Then, the dielectric film 3 is removed so as to cross the plurality of linear conductors 2, and a rectangular groove 7 is formed. A conductive portion 8 is formed on the surface portion of each linear conductor 2 exposed in the groove 7, and a bump-shaped metal protrusion 6 is formed on the conductive portion 8. On the other hand, an adhesive layer 4 is provided on the other side of the insulating film 1.
A conductor layer 5 is formed through the conductor layer 5.
【００１８】この半導体検査装置は、例えばつぎのよう
にして作製される。すなわち、まず、絶縁性フイルムと
金属を接合し（例えば金属箔上にポリイミド前駆体溶液
を塗布し、昇温加熱することにより溶媒を揮発させイミ
ド閉環させる）、これに従来公知の方法によりエツチン
グ処理を施して複数の線状導体からなる所望の検査回路
パターンを形成する。つぎに、図２に示すように、線状
導体２からなる検査回路パターンの形成された絶縁性フ
イルム１面に誘電体層３を形成する。また、絶縁性フイ
ルム１の他面に接着剤を塗布することにより接着剤層４
を形成し、この接着剤層４を介して導体物質を貼付して
導体層５を形成する。そして、図３に示すように、線状
導体２を横切つて所定部分の導体２表面が露出するよう
部分的に上記誘電体層３を除去し四角形状の溝７を形成
する。ついで、図４に示すように、上記四角形状の溝７
内に露出する導体２表面にのみ金属物質を充填するか、
もしくは導体２を電極として用いて導通部８およびバン
プ状金属製突出部６を形成する。このような一連の工程
を経由することにより半導体検査装置が作製される。This semiconductor inspection device is manufactured, for example, as follows. That is, first, an insulating film and a metal are bonded (for example, a polyimide precursor solution is applied onto a metal foil and heated to evaporate the solvent and close the imide ring), and then an etching process is performed using a conventionally known method. A desired test circuit pattern consisting of a plurality of linear conductors is formed. Next, as shown in FIG. 2, a dielectric layer 3 is formed on the insulating film 1 on which the test circuit pattern made of the linear conductors 2 is formed. In addition, by applying an adhesive to the other surface of the insulating film 1, the adhesive layer 4
is formed, and a conductor material is attached via this adhesive layer 4 to form a conductor layer 5. Then, as shown in FIG. 3, the dielectric layer 3 is partially removed to expose a predetermined portion of the surface of the conductor 2 across the linear conductor 2, thereby forming a rectangular groove 7. Next, as shown in FIG. 4, the square groove 7 is
Fill only the surface of the conductor 2 exposed inside with a metal substance, or
Alternatively, the conductor 2 is used as an electrode to form the conductive portion 8 and the bump-shaped metal protrusion 6. A semiconductor inspection device is manufactured through such a series of steps.
【００１９】このようにして得られる半導体検査装置は
、線状導体２を横切つて導体２表面が露出するよう上記
誘電体層３が部分的に除去され四角形状の溝７が形成さ
れている。そして、上記溝７内に露出する各導体２の表
面部分に導通部８および導通部８上にバンプ状金属製突
出部６が形成されている。このため、電極部分が微小化
され、検査対象の半導体の各部の接触が確実となる。
また、バンプ状金属製突出部６が線状導体２からなる検
査回路パターン上に設けられているため、回路の形状の
認識が容易で、目視およびカメラ等による検査対象の半
導体の各部との接触および接続時の位置合わせが容易で
ある。In the semiconductor inspection device thus obtained, the dielectric layer 3 is partially removed so that the surface of the conductor 2 is exposed across the linear conductor 2, and a rectangular groove 7 is formed. . A conductive portion 8 and a bump-shaped metal protrusion 6 are formed on the conductive portion 8 on the surface portion of each conductor 2 exposed in the groove 7 . Therefore, the electrode portion is miniaturized, and contact between various parts of the semiconductor to be inspected is ensured. In addition, since the bump-shaped metal protrusions 6 are provided on the inspection circuit pattern made of the linear conductor 2, the shape of the circuit can be easily recognized, and contact with various parts of the semiconductor to be inspected by visual inspection and camera etc. And alignment during connection is easy.
【００２０】上記導電層５の形成方法としては、上記接
着剤層４を介して接着する以外に、例えばイオン・プレ
ーテイング，無電解めつき方法等があげられる。また、
導電層５の厚みは、０．１〜１０μｍの範囲内に設定す
るのが好ましい。The conductive layer 5 may be formed by, for example, ion plating or electroless plating, in addition to bonding through the adhesive layer 4. Also,
The thickness of the conductive layer 5 is preferably set within the range of 0.1 to 10 μm.
【００２１】上記部分的に誘電体層３を除去して溝７を
形成する方法としては、機械加工，レーザー加工，光加
工，化学エツチング加工等の方法があげられる。なかで
も、エキシマレーザーのような紫外線レーザーの照射に
よる加工方法を用いることが好ましい。Methods for forming the grooves 7 by partially removing the dielectric layer 3 include mechanical processing, laser processing, optical processing, chemical etching, and the like. Among these, it is preferable to use a processing method that involves irradiation with an ultraviolet laser such as an excimer laser.
【００２２】このような半導体検査装置の各部分のサイ
ズは、検査対象となる半導体のサイズ等に応じて適宜設
定されるが、例えば、図５に示すように、バンプ状金属
製突出部６の突出高さ（Ｃ）は、０．１μｍ〜数１００
μｍの範囲に形成するのが好ましい。また、線状導体２
の幅（Ａ）とバンプ状金属製突出部６の幅（Ｂ）の比（
Ｂ／Ａ）は、０．１〜２の範囲になるよう設定するのが
好ましく、特に好ましくは１〜１．５である。The size of each part of such a semiconductor inspection apparatus is appropriately set depending on the size of the semiconductor to be inspected. For example, as shown in FIG. The protrusion height (C) is 0.1 μm to several 100 μm
It is preferable to form it in the μm range. In addition, the linear conductor 2
The ratio of the width (A) of the bump-shaped metal protrusion 6 to the width (B) of the bump-shaped metal protrusion 6 (
B/A) is preferably set in a range of 0.1 to 2, particularly preferably 1 to 1.5.
【００２３】また、図６に示すように、バンプ状金属製
突出部６上に、さらに小径あるいは針状の金属製突出物
９を設けてもよい。この金属製突出物９は、単位面積当
たりの接触圧を上げ、より確実な接触を可能とする他、
検査対象の半導体の電極部に形成される表面酸化層を貫
通し抵抗値を下げるという役割を有するものである。上
記以外の部分には前記実施例と同一符号を付している。Further, as shown in FIG. 6, a metal protrusion 9 having a smaller diameter or a needle shape may be provided on the bump-shaped metal protrusion 6. This metal protrusion 9 increases the contact pressure per unit area and enables more reliable contact.
It has the role of penetrating the surface oxidized layer formed on the electrode part of the semiconductor to be inspected and lowering the resistance value. Portions other than those mentioned above are given the same reference numerals as in the previous embodiment.
【００２４】さらに、図７に示すように、バンプ状金属
製突出部６表面上に、コーテイング層１０を設けてもよ
い。上記コーテイング層１０形成材料としては、クロム
，タングステン，ロジウム等があげられる。このように
、コーテイング層１０を設けることにより、バンプ状金
属製突出部６の寿命を大幅に向上させることができる。
そして、他の部分には前記実施例と同一の符号を付して
いる。Furthermore, as shown in FIG. 7, a coating layer 10 may be provided on the surface of the bump-shaped metal protrusion 6. Examples of the material for forming the coating layer 10 include chromium, tungsten, and rhodium. By providing the coating layer 10 in this manner, the life of the bump-shaped metal protrusion 6 can be significantly improved. Other parts are given the same reference numerals as in the previous embodiment.
【００２５】また、上記導通部８は、上記実施例のよう
に、一種類の金属物質を用いた一層構造に限定されるも
のではない。例えば、図８に示すように、３種類の金属
物質を用いて３層構造に形成してもよい。すなわち、溝
７の導体表面部分に銅等の安価な金属物質を用いて第１
層８ａとし、バンプ状金属製突出部６形成部分の金属物
質に接触信頼性の高い金等を用いて第３層８ｃ（バンプ
状金属製突出部を含む）とする。そして、上記第１層８
ａと第３層８ｃとの間に位置する第２層８ｂには、上記
第１層８ａと第３層８ｃを形成する金属物質の相互反応
を防止するためのバリアー性金属物質としてニツケル等
を用いる。さらに、上記３層構造に限定するものではな
く、２種類の金属物質を用いて２層構造に、また４種類
以上の金属物質を用いた多層構造に形成してもよい。Further, the conductive portion 8 is not limited to a single layer structure using one type of metal material as in the above embodiment. For example, as shown in FIG. 8, three types of metal materials may be used to form a three-layer structure. That is, the conductor surface portion of the groove 7 is made of an inexpensive metal material such as copper, and the first
A third layer 8c (including the bump-shaped metal protrusions) is formed by using gold or the like having high contact reliability as the metal material in the portion where the bump-shaped metal protrusions 6 are formed. Then, the first layer 8
The second layer 8b located between the first layer 8a and the third layer 8c is made of nickel or the like as a barrier metal material to prevent mutual reaction between the metal materials forming the first layer 8a and the third layer 8c. use Further, the present invention is not limited to the three-layer structure described above, and may be formed into a two-layer structure using two types of metal substances, or a multilayer structure using four or more types of metal substances.
【００２６】[0026]
【発明の効果】以上のように、この発明の半導体検査装
置は、絶縁性基板の片面に導体によつて検査回路パター
ンが形成され、さらに誘電体層が形成されている。そし
て、上記導体の所定の部分が露出するよう誘電体層が部
分的に除去されている。この部分的除去により露出した
導体に導通部およびバンプ状金属製突出物が形成されて
いる。このため、従来のように貫通孔を形成しこれに導
電物質を充填して得られる電極部に比べて微小に形成で
きる。したがつて、検査対象となる半導体の電極部が高
密度に形成されていても確実に接触できる。したがつて
、液晶表示素子等の半導体の検査に最適である。また、
絶縁性フイルムの他面に導体層が形成されているため、
高周波用途の半導体の検査にも充分に対応することがで
きる。そして、電極部となるバンプ状金属製突出物が検
査回路パターン上に形成されているため、回路の形状認
識が容易である。したがつて、検査対象物との位置合わ
せが容易となる。このことは、目視あるいはカメラによ
る検査対象物との接続時の位置合わせが容易となり、ユ
ーザーの生産性向上にも充分対応できるものである。そ
して、外部回路の特性に合わせて正確な測定を保証する
ためにインピーダンスの整合をとることもできる。As described above, in the semiconductor testing device of the present invention, a test circuit pattern is formed by a conductor on one side of an insulating substrate, and a dielectric layer is further formed. Then, the dielectric layer is partially removed so that a predetermined portion of the conductor is exposed. A conductive portion and a bump-shaped metal protrusion are formed on the conductor exposed by this partial removal. Therefore, the electrode part can be formed smaller than the conventional electrode part obtained by forming a through hole and filling it with a conductive material. Therefore, even if the electrode portions of the semiconductor to be inspected are formed in high density, reliable contact can be made. Therefore, it is ideal for testing semiconductors such as liquid crystal display elements. Also,
Since a conductive layer is formed on the other side of the insulating film,
It can also be used to test semiconductors for high frequency applications. Further, since bump-shaped metal protrusions serving as electrode portions are formed on the test circuit pattern, the shape of the circuit can be easily recognized. Therefore, positioning with the object to be inspected becomes easy. This facilitates positioning when connecting to an object to be inspected visually or with a camera, and is sufficient to improve user productivity. Impedance matching can also be performed to match the characteristics of the external circuit to ensure accurate measurements.
【００２７】[0027]
【図面の簡単な説明】[Brief explanation of drawings]
【図１】この発明の半導体検査装置の一実施例を示す斜
視図である。FIG. 1 is a perspective view showing an embodiment of a semiconductor inspection device of the present invention.
【図２】この発明の半導体検査装置の製造工程を示す工
程説明図である。FIG. 2 is a process explanatory diagram showing the manufacturing process of the semiconductor inspection device of the present invention.
【図３】この発明の半導体検査装置の製造工程を示す工
程説明図である。FIG. 3 is a process explanatory diagram showing the manufacturing process of the semiconductor inspection device of the present invention.
【図４】この発明の半導体検査装置の製造工程を示す工
程説明図である。FIG. 4 is a process explanatory diagram showing the manufacturing process of the semiconductor inspection device of the present invention.
【図５】この発明の半導体検査装置の各部の寸法を示す
部分断面図である。FIG. 5 is a partial cross-sectional view showing the dimensions of each part of the semiconductor inspection device of the present invention.
【図６】この発明の他の実施例を示す部分断面図である
。FIG. 6 is a partial sectional view showing another embodiment of the invention.
【図７】この発明のさらに他の実施例を示す部分断面図
である。FIG. 7 is a partial cross-sectional view showing still another embodiment of the invention.
【図８】この発明の他の実施例を示す部分断面図である
。FIG. 8 is a partial sectional view showing another embodiment of the invention.
１ 絶縁性基板 ２ 線状導体 ３ 誘電体層 ４ 接着剤層 ５ 導体層 ６ バンプ状金属製突出物 ７ 溝 ８ 導通部 1 Insulating substrate 2 Linear conductor 3 Dielectric layer 4 Adhesive layer 5 Conductor layer 6 Bump-shaped metal protrusions 7 Groove 8 Continuity part
Claims (6)
の検査回路パターンが形成され、上記検査回路パターン
の形成された絶縁性基板面に誘電体層が形成され、所定
の導体の部分の表面が露出するよう上記誘電体層が部分
的に除去され、上記導体の露出部分に導通部が形成され
、この導通部上にバンプ状金属製突出部が形成され、上
記絶縁性基板の他面に導体層が形成されていることを特
徴とする半導体検査装置。1. A predetermined test circuit pattern is formed using a conductor on one side of an insulating substrate, a dielectric layer is formed on the surface of the insulating substrate on which the test circuit pattern is formed, and a dielectric layer is formed on the surface of the insulating substrate on which the test circuit pattern is formed. The dielectric layer is partially removed to expose the surface, a conductive part is formed in the exposed part of the conductor, a bump-shaped metal protrusion is formed on the conductive part, and the other surface of the insulating substrate is formed. A semiconductor inspection device characterized in that a conductor layer is formed on.
状導体であつて複数本が並設され、並設された複数本の
線状導体を横切るように四角形状溝が形成され、上記溝
内に露出する各線状導体の表面部分に導通路とバンプ状
金属製突出部が一体的に形成されている請求項１記載の
半導体検査装置。2. A plurality of conductors constituting the test circuit pattern are linear conductors, and a plurality of conductors are arranged in parallel, and a rectangular groove is formed to cross the plurality of linear conductors arranged in parallel, and a rectangular groove is formed to cross the plurality of linear conductors arranged in parallel. 2. The semiconductor testing device according to claim 1, wherein a conductive path and a bump-shaped metal protrusion are integrally formed on a surface portion of each linear conductor exposed to the surface of the conductor.
層構造に形成されている請求項１〜２記載の半導体検査
装置。3. The semiconductor inspection device according to claim 1, wherein the conductive portion is formed in a multilayer structure of a plurality of metal substances.
らに金属製突出物が形成されている請求項１〜３のいず
れか一項に記載の半導体検査装置。4. The semiconductor inspection device according to claim 1, further comprising a metal protrusion formed at the tip of the bump-shaped metal protrusion.
，タングステンまたはロジウムからなるコーテイング層
が形成されている請求項１〜４のいずれか一項に記載の
半導体検査装置。5. The semiconductor inspection device according to claim 1, wherein a coating layer made of chromium, tungsten, or rhodium is formed on the surface of the bump-shaped metal protrusion.
求項１〜５のいずれか一項に記載の半導体検査装置。6. The semiconductor inspection device according to claim 1, wherein the insulating substrate is an insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3938391A JPH04330749A (en) | 1991-02-07 | 1991-02-07 | Semiconductor inspection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3938391A JPH04330749A (en) | 1991-02-07 | 1991-02-07 | Semiconductor inspection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04330749A true JPH04330749A (en) | 1992-11-18 |
Family
ID=12551492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3938391A Pending JPH04330749A (en) | 1991-02-07 | 1991-02-07 | Semiconductor inspection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04330749A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008039639A (en) * | 2006-08-08 | 2008-02-21 | Hioki Ee Corp | Measurement probe of contact type |
-
1991
- 1991-02-07 JP JP3938391A patent/JPH04330749A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008039639A (en) * | 2006-08-08 | 2008-02-21 | Hioki Ee Corp | Measurement probe of contact type |
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