JPH04326849A - Image sensor - Google Patents

Image sensor

Info

Publication number
JPH04326849A
JPH04326849A JP3097510A JP9751091A JPH04326849A JP H04326849 A JPH04326849 A JP H04326849A JP 3097510 A JP3097510 A JP 3097510A JP 9751091 A JP9751091 A JP 9751091A JP H04326849 A JPH04326849 A JP H04326849A
Authority
JP
Japan
Prior art keywords
fet
amplification
step
reset
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3097510A
Inventor
Akira Kadoma
Tatsushizu Okamoto
Kazufumi Yamaguchi
Yasunaga Yamamoto
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP3097510A priority Critical patent/JPH04326849A/en
Publication of JPH04326849A publication Critical patent/JPH04326849A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To read original information at high speed with high sensitivity.
CONSTITUTION: This image sensor is composed of a source follower part composed of a photodiode 1, first step FET 2 to receive the anode terminal potential of the photodiode at a gate electrode and FET 3 for constant current source, amplification part composed of an FET 4 for amplification to receive the source terminal potential of the above-mentioned first step FET at a gate electrode and FET 5 for access, picture element having a reset part composed of an FET 6 for reset to reset the inter-terminal voltage of the above-mentioned photodiode 1 to a fixed potential, and shift register 100 for scanning to successively drive the FET 5 for access and the FET 6 for reset as mentioned above. Thus, since the sensitivity of the gate potential at the first step FET 2 can be improved and the source terminal potential of the first step FET lowering the impedance at the amplification part in the next step is received at the gate electrode of the FET 4 for amplification, the W (channel width)/L (channel length) ratio of the FET 4 for amplification can be enlarged. As the result, a high output can be obtained.
COPYRIGHT: (C)1992,JPO&Japio
JP3097510A 1991-04-26 1991-04-26 Image sensor Pending JPH04326849A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3097510A JPH04326849A (en) 1991-04-26 1991-04-26 Image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3097510A JPH04326849A (en) 1991-04-26 1991-04-26 Image sensor

Publications (1)

Publication Number Publication Date
JPH04326849A true JPH04326849A (en) 1992-11-16

Family

ID=14194259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3097510A Pending JPH04326849A (en) 1991-04-26 1991-04-26 Image sensor

Country Status (1)

Country Link
JP (1) JPH04326849A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7068246B2 (en) 2000-06-12 2006-06-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting module and method of driving the same, and optical sensor
US7688290B2 (en) 2000-01-17 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Display system and electrical appliance
US7830370B2 (en) 2000-06-06 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9368089B2 (en) 2000-01-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display system and electrical appliance
US7688290B2 (en) 2000-01-17 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Display system and electrical appliance
US8253662B2 (en) 2000-01-17 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Display system and electrical appliance
US9087476B2 (en) 2000-01-17 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Display system and electrical appliance
US7830370B2 (en) 2000-06-06 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US7515125B2 (en) 2000-06-12 2009-04-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting module and method of driving the same, and optical sensor
US7068246B2 (en) 2000-06-12 2006-06-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting module and method of driving the same, and optical sensor

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