JPH04323856A - Semiconductor device with heat sink - Google Patents
Semiconductor device with heat sinkInfo
- Publication number
- JPH04323856A JPH04323856A JP3092506A JP9250691A JPH04323856A JP H04323856 A JPH04323856 A JP H04323856A JP 3092506 A JP3092506 A JP 3092506A JP 9250691 A JP9250691 A JP 9250691A JP H04323856 A JPH04323856 A JP H04323856A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- heat
- sink
- semiconductor device
- transfer area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000000919 ceramic Substances 0.000 abstract description 18
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical group [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
Abstract
Description
【0001】0001
【産業上の利用分野】本発明はヒートシンク付き半導体
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device with a heat sink.
【0002】0002
【従来の技術】従来、例えば図3に断面図を示すように
、半導体チップ5を搭載する面が外部リード7を取り付
ける面の反対側にある構造(以下キャビティアップと称
す)の半導体装置では、消費電力が大きい場合、半導体
チップから発生する熱を効率良く逃がすために、セラミ
ックケース8の上にヒートシンク3を取り付けている。
このヒートシンク3はフィン1を備えており、通常Al
又はCuでできている。セラミックケースはAl2 O
3 でできており、各々の熱伝導率を表1に示す。2. Description of the Related Art Conventionally, as shown in the cross-sectional view of FIG. 3, for example, a semiconductor device has a structure in which the surface on which a semiconductor chip 5 is mounted is opposite to the surface on which external leads 7 are attached (hereinafter referred to as cavity-up). When power consumption is large, a heat sink 3 is attached on top of the ceramic case 8 in order to efficiently dissipate heat generated from the semiconductor chip. This heat sink 3 is equipped with fins 1, and is usually made of Al.
Or made of Cu. Ceramic case is Al2O
3, and the thermal conductivity of each is shown in Table 1.
【0003】0003
【0004】ヒートシンク3はセラミックケース8に樹
脂4により接着される。半導体チップ5から発生した熱
はセラミックケース8を通ってヒートシンク3に伝わり
、外気に放熱される。[0004] The heat sink 3 is bonded to the ceramic case 8 with a resin 4. Heat generated from the semiconductor chip 5 is transmitted to the heat sink 3 through the ceramic case 8, and is radiated to the outside air.
【0005】表1からわかるように、Al2 O3 の
熱伝導率が最も低い。従ってセラミックケースからヒー
トシンクに伝わる熱量はAl2 O3 の熱伝導率で律
速され、熱量をQとすると
Q=λAΔT/l
…(1)で表わされる。ここにλは熱伝導率、Aは伝熱
面積、lは距離、ΔTはl離れた2点間の温度差である
。As can be seen from Table 1, Al2 O3 has the lowest thermal conductivity. Therefore, the amount of heat transferred from the ceramic case to the heat sink is controlled by the thermal conductivity of Al2O3, and if the amount of heat is Q, then Q=λAΔT/l
...It is represented by (1). Here, λ is the thermal conductivity, A is the heat transfer area, l is the distance, and ΔT is the temperature difference between two points l apart.
【0006】[0006]
【発明が解決しようとする課題】ヒートシンクに伝わる
熱量を多くするためには(1)式から伝熱面積Aを大き
くすることが必要である。しかし、図3に表わされる従
来のヒートシンク付き半導体装置では、ヒートシンクは
セラミックケースの上面に付いているため、伝熱面積を
大きくして放熱性能を上げるためにはセラミックケース
を大きくしなければならない。このことは従来のヒート
シンク付き半導体装置では実装基板上に高密度実装がで
きないということを意味する。電子機器の小型化の要求
が高まっているなかでセラミックケースの大きさが大き
くて高密度実装できないということは致命的な問題であ
った。また、セラミックケースが大きいと材料コストが
高くなるという問題もあった。Problem to be Solved by the Invention In order to increase the amount of heat transferred to the heat sink, it is necessary to increase the heat transfer area A according to equation (1). However, in the conventional semiconductor device with a heat sink shown in FIG. 3, the heat sink is attached to the top surface of the ceramic case, so in order to increase the heat transfer area and improve the heat dissipation performance, the ceramic case must be made larger. This means that conventional semiconductor devices with heat sinks cannot be mounted at high density on a mounting board. With the increasing demand for miniaturization of electronic devices, the large size of the ceramic case precluded high-density packaging, which was a fatal problem. Another problem was that the larger the ceramic case, the higher the material cost.
【0007】[0007]
【課題を解決するための手段】本発明のヒートシンク付
半導体装置はヒートシンクがパッケージの上面と側面の
両方に接着されている特徴を有している。Means for Solving the Problems The semiconductor device with a heat sink of the present invention is characterized in that the heat sink is bonded to both the top and side surfaces of the package.
【0008】なお、ここでパッケージとはヒートシンク
を除いた半導体装置の半導体チップを搭載するケースの
ことをいう。[0008] Here, the package refers to a case in which a semiconductor chip of a semiconductor device is mounted, excluding a heat sink.
【0009】[0009]
【実施例】次に本発明について図面を参照して説明する
。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【0010】図1は本発明の一実施例のヒートシンク付
き半導体装置の断面図である。ヒートシンク3はセラミ
ックケース8の上面および側面の両方に接着剤4により
付いている。この他の部分は図3に示した従来例と同じ
である。このような構造にすると、同じ放熱性能を得る
ためのセラミックケースの大きさを図3に示す従来の構
造に比べて小さくすることができる。その理由は以下の
ように説明される。図3でセラミックケース8の厚さを
tとし、セラミックケースの上面の幅tの伝熱面積をA
3 とする。同様に図1でヒートシンク3の側面部分2
の厚さをW、その側面部分2を伝わってヒートシンク3
のフィン1に伝わる伝熱面積をA1 とする。セラミッ
クケースの熱伝導率をλ、ヒートシンクの熱伝導率をλ
H とすると、図3で伝熱面積A3 を通る熱量は
Q=λA3 ΔT/l
…(2)
同様に図1で伝熱面積A1 を通る熱量は Q=λH
A1 ΔT/l
…(3)図1と図
3で放熱効果が等しいためには(2)式と(3)式から
A3 /A1 =λH /λ
…
(4)すなわちヒートシンクの熱伝導率が大きい分、伝
熱面積を小さくすることができる。従って半導体装置の
大きさを小さくすることができる。FIG. 1 is a sectional view of a semiconductor device with a heat sink according to an embodiment of the present invention. The heat sink 3 is attached to both the top and side surfaces of the ceramic case 8 with an adhesive 4. The other parts are the same as the conventional example shown in FIG. With such a structure, the size of the ceramic case for obtaining the same heat dissipation performance can be made smaller compared to the conventional structure shown in FIG. 3. The reason is explained as follows. In Figure 3, the thickness of the ceramic case 8 is t, and the heat transfer area of the width t of the top surface of the ceramic case is A.
3. Similarly, in Figure 1, the side part 2 of the heat sink 3
The thickness of the heat sink 3 is W, and the heat sink 3
Let A1 be the heat transfer area transferred to the fin 1. The thermal conductivity of the ceramic case is λ, and the thermal conductivity of the heat sink is λ.
H, the amount of heat passing through the heat transfer area A3 in Figure 3 is
Q=λA3 ΔT/l
...(2)
Similarly, in Figure 1, the amount of heat passing through the heat transfer area A1 is Q = λH
A1 ΔT/l
...(3) In order for the heat dissipation effect to be equal in Figures 1 and 3, from formulas (2) and (3), A3 /A1 = λH /λ
…
(4) That is, the heat transfer area can be reduced because the heat sink has a high thermal conductivity. Therefore, the size of the semiconductor device can be reduced.
【0011】図2は本発明の第2の実施例を示す断面図
である。ヒートシンクのフィン1とヒートシンクの側面
部分9とで熱伝導率の異なる材料を使用している。この
他は先の実施例と同じである。効果は第1の実施例と同
じである。FIG. 2 is a sectional view showing a second embodiment of the present invention. Materials having different thermal conductivities are used for the fins 1 of the heat sink and the side portions 9 of the heat sink. The rest is the same as the previous embodiment. The effect is the same as the first embodiment.
【0012】本発明の実施例を実現するためのヒートシ
ンクとセラミックケースとの接着剤としては、トーレシ
リコーン(株)からSE4400なる商品名で発売して
いる樹脂がある。また、本願発明はセラミックケースに
限ることはなく、樹脂封止型半導体装置においても同様
に適用できる。As an adhesive between the heat sink and the ceramic case for realizing the embodiment of the present invention, there is a resin sold by Toray Silicone Co., Ltd. under the trade name SE4400. Further, the present invention is not limited to ceramic cases, and can be similarly applied to resin-sealed semiconductor devices.
【0013】[0013]
【発明の効果】以上説明したように本発明はパッケージ
の上面だけでなく側面にもヒートシンクを接着させたた
め、従来の半導体装置に比べて、同じ放熱性能を持ちな
がら半導体装置の大きさを小さくでき、その結果、高密
度実装ができるようになるという効果を有する。また、
パッケージの大きさが小さくなったため材料費が安くな
り、コストが安くなるという効果を有する。[Effects of the Invention] As explained above, in the present invention, the heat sink is bonded not only to the top surface of the package but also to the side surface, so compared to conventional semiconductor devices, the size of the semiconductor device can be made smaller while maintaining the same heat dissipation performance. As a result, it has the effect of enabling high-density packaging. Also,
Since the size of the package is reduced, material costs are reduced, which has the effect of reducing costs.
【図1】本発明の一実施例の断面図。FIG. 1 is a sectional view of an embodiment of the present invention.
【図2】本発明の第2の実施例を示す断面図。FIG. 2 is a sectional view showing a second embodiment of the invention.
【図3】従来の半導体装置を示す断面図。FIG. 3 is a cross-sectional view showing a conventional semiconductor device.
1 フィン 2,9 側面部分 3 ヒートシンク 4 接着剤 5 半導体チップ 7 外部リード 8 セラミックケース 1 Fin 2,9 Side part 3 Heat sink 4 Adhesive 5 Semiconductor chip 7 External lead 8 Ceramic case
Claims (1)
、該パッケージの熱伝導率と同等以上の熱伝導率を有す
るヒートシンクが付いている半導体装置において、該ヒ
ートシンクは該パッケージの上面と側面に接着されてい
ることを特徴とするヒートシンク付き半導体装置。Claim 1: In a semiconductor device in which a package containing a semiconductor chip is attached with a heat sink having a thermal conductivity equal to or higher than that of the package, the heat sink is bonded to the top and side surfaces of the package. A semiconductor device with a heat sink.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3092506A JPH04323856A (en) | 1991-04-24 | 1991-04-24 | Semiconductor device with heat sink |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3092506A JPH04323856A (en) | 1991-04-24 | 1991-04-24 | Semiconductor device with heat sink |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04323856A true JPH04323856A (en) | 1992-11-13 |
Family
ID=14056198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3092506A Pending JPH04323856A (en) | 1991-04-24 | 1991-04-24 | Semiconductor device with heat sink |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04323856A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160126801A (en) * | 2015-04-24 | 2016-11-02 | (주) 디아이 | LED lighting heat sink manufacturing method using the 3D printer |
-
1991
- 1991-04-24 JP JP3092506A patent/JPH04323856A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160126801A (en) * | 2015-04-24 | 2016-11-02 | (주) 디아이 | LED lighting heat sink manufacturing method using the 3D printer |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19990615 |