JPH04323232A - Conductive film and production thereof - Google Patents
Conductive film and production thereofInfo
- Publication number
- JPH04323232A JPH04323232A JP11910991A JP11910991A JPH04323232A JP H04323232 A JPH04323232 A JP H04323232A JP 11910991 A JP11910991 A JP 11910991A JP 11910991 A JP11910991 A JP 11910991A JP H04323232 A JPH04323232 A JP H04323232A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polyimide
- formula
- polyimide film
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229920001721 polyimide Polymers 0.000 claims abstract description 49
- 239000004642 Polyimide Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052731 fluorine Inorganic materials 0.000 claims abstract 2
- 239000011737 fluorine Substances 0.000 claims abstract 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 125000006551 perfluoro alkylene group Chemical group 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 239000000470 constituent Substances 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000000862 absorption spectrum Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229920005575 poly(amic acid) Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- SKQMJTLFJLUFHC-UHFFFAOYSA-N 4-(4-amino-2,3,5,6-tetrafluorophenoxy)-2,3,5,6-tetrafluoroaniline Chemical compound FC1=C(F)C(N)=C(F)C(F)=C1OC1=C(F)C(F)=C(N)C(F)=C1F SKQMJTLFJLUFHC-UHFFFAOYSA-N 0.000 description 2
- DXPDSWSYCBNHTO-UHFFFAOYSA-N 4-[4-(3,4-dicarboxy-2,5,6-trifluorophenoxy)-2,3,5,6-tetrafluorophenoxy]-3,5,6-trifluorophthalic acid Chemical compound FC1=C(C(O)=O)C(C(=O)O)=C(F)C(F)=C1OC(C(=C1F)F)=C(F)C(F)=C1OC1=C(F)C(F)=C(C(O)=O)C(C(O)=O)=C1F DXPDSWSYCBNHTO-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- WNMRFYNFVYCNDL-UHFFFAOYSA-N 4,8-difluorofuro[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound FC1=C2C(=O)OC(=O)C2=C(F)C2=C1C(=O)OC2=O WNMRFYNFVYCNDL-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、近赤外光の中でも特に
光通信に使用される波長域（０．８ 〜１．７ μｍ）
の光の透過性に優れ、かつ可とう性を有し、耐熱性、導
電性の優れた導電性透明フィルムおよびその製造方法に
関する。[Industrial Application Field] The present invention applies to near-infrared light, especially in the wavelength range (0.8 to 1.7 μm) used for optical communication.
The present invention relates to a conductive transparent film having excellent light transmittance, flexibility, heat resistance, and conductivity, and a method for producing the same.
【０００２】0002
【従来の技術】導電性透明フィルムとして、ポリエチレ
ンテレフタレート（ 以下、ＰＥＴと略記する） など
の透明プラスチックフィルムに、インジウム・スズ酸化
物（以下、ＩＴＯと略記する）膜を形成したフィルムが
市販されている。これらの導電性透明フィルムは、可視
光の透明性では優れているが、近赤外光の透過性には問
題があり、また十分な導電性が得られない（表面抵抗は
数１００ Ω／□）という欠点があった。またＰＥＴフ
ィルムは軟化温度が比較的低い（ガラス転移点約７０℃
） ので、十分な耐熱性がなく、そのうえ吸水率が１％
に及ぶので、空気中の水分の影響を受け易いなど耐久性
や信頼性にも問題があった。一方、本発明者らはフッ素
化ポリイミドを用いた導電性フィルムおよびその製造方
法を、特願平２−７３２９０ に示している。この導電
性ポリイミドフィルムは耐熱性、導電性、低吸水性およ
び可視光領域での透明性に優れているので、今後、液晶
用の基板やタッチパネルなどの用途に適用が期待されて
いる。しかし、このフィルムは近赤外域に炭素−水素結
合振動の高調波吸収に由来する吸収ピークが存在するの
で、この領域での透明性には問題があった。空間光変調
器などの通信用近赤外光（波長１．３ μｍ 、１．５
５μｍ）を対象とした光シャッタには、透明導電性フィ
ルムが不可欠となるので、近赤外光に対して高い透過性
を示す導電性フィルムの開発が望まれている。[Prior Art] As a conductive transparent film, a film in which an indium tin oxide (hereinafter abbreviated as ITO) film is formed on a transparent plastic film such as polyethylene terephthalate (hereinafter abbreviated as PET) is commercially available. There is. These conductive transparent films have excellent transparency for visible light, but have problems with near-infrared light transmission, and do not have sufficient conductivity (surface resistance is several 100 Ω/□ ) There was a drawback. In addition, PET film has a relatively low softening temperature (glass transition point is approximately 70°C).
), it does not have sufficient heat resistance, and its water absorption rate is only 1%.
, so there were also problems with durability and reliability, such as being easily affected by moisture in the air. On the other hand, the present inventors have disclosed a conductive film using fluorinated polyimide and a method for producing the same in Japanese Patent Application No. 2-73290. This conductive polyimide film has excellent heat resistance, conductivity, low water absorption, and transparency in the visible light region, so it is expected to be used in applications such as liquid crystal substrates and touch panels in the future. However, since this film has an absorption peak in the near-infrared region that is derived from harmonic absorption of carbon-hydrogen bond vibrations, there was a problem with transparency in this region. Near-infrared light for communications such as spatial light modulators (wavelength: 1.3 μm, 1.5
Since a transparent conductive film is indispensable for an optical shutter for a wavelength of 5 μm), it is desired to develop a conductive film that exhibits high transparency to near-infrared light.
【０００３】0003
【発明が解決しようとする課題】本発明は、近赤外光、
特に光通信に使用される波長域（０．８ 〜１．７ μ
ｍ）の光の透過性に優れた導電性プラスチックフィルム
を提供することにある。[Problems to be Solved by the Invention] The present invention provides near-infrared light,
In particular, the wavelength range used for optical communications (0.8 to 1.7 μ
The object of the present invention is to provide a conductive plastic film having excellent light transmittance (m).
【０００４】0004
【課題を解決するための手段】本発明の導電性透明フィ
ルムは、化１で表わされる繰り返し単位を有する全フッ
素化ポリイミドまたはポリイミド共重合体またはポリイ
ミド混合物を主構成要素とする透明ポリイミドフィルム
に、インジウム・スズ酸化物膜を形成させる。本発明者
らは近赤外域における透明性を維持しながら導電性向上
させる方法について種々検討した結果、基板のフィルム
材料として分子構造内に水素を含まない全フッ素化ポリ
イミドを用い、ＩＴＯ膜の形成にあたっては高い温度で
処理を行うこと、特にエレクトロン サイクロトロン
レゾナンス（以下、ＥＣＲと略記する）スパッタで
ＩＴＯ膜を作製することにより、導電性を高くし得るこ
とを見い出した。また本発明者らは耐熱性、撥水性に優
れるばかりでなく、分子構造中に水素を含まないため従
来の透明プラスチックにおいて本質的であった近赤外域
での吸収損失が大幅に低下し、この領域の光に対する透
過性に優れている全フッ素化ポリイミドを見い出した。
本発明における透明フィルムに用いるポリイミドとして
は、分子構造中に水素を含まない全フッ素化ポリイミド
であればどのようなものでもよく、例えば下記の構造式
〔ＩＩ〕[Means for Solving the Problems] The conductive transparent film of the present invention is a transparent polyimide film mainly composed of a perfluorinated polyimide, a polyimide copolymer, or a polyimide mixture having a repeating unit represented by formula 1. Form an indium tin oxide film. As a result of various studies on methods to improve conductivity while maintaining transparency in the near-infrared region, the present inventors used perfluorinated polyimide, which does not contain hydrogen in its molecular structure, as the film material for the substrate, and formed an ITO film. In this process, we have found that conductivity can be increased by processing at high temperatures, particularly by fabricating an ITO film using electron cyclotron resonance (hereinafter abbreviated as ECR) sputtering. In addition, the present inventors have found that not only does it have excellent heat resistance and water repellency, but because it does not contain hydrogen in its molecular structure, absorption loss in the near-infrared region, which is essential for conventional transparent plastics, is significantly reduced. We have discovered a perfluorinated polyimide that has excellent light transmittance. The polyimide used for the transparent film in the present invention may be any perfluorinated polyimide that does not contain hydrogen in its molecular structure, such as the following structural formula [II].
【０００５】[0005]
【化５】 下記の構造式〔ＩＩＩ 〕[C5] The following structural formula [III]
【０００６】[0006]
【化６】 下記の構造式〔ＩＶ〕[C6] Structural formula [IV] below
【０００７】[0007]
【化７】
で表わされるポリイミドフィルムがある。本発明者らは
、これらＩＴＯ膜を形成する場合、フィルムを高温で保
持すること、この高温処理を単なる加熱処理ではなくＥ
ＣＲスパッタにより行うことにより、透明性に影響を与
えることなく、高い導電性が得られることを見い出した
。その具体的温度についてみると、その上限は、使用す
るポリイミドフィルムの耐熱性限界であり、下限は所望
の導電性が得られる温度であって、好ましくは２００〜
４００ ℃の範囲内である。このような高温加熱処理を
するにあたっては、従来のＰＥＴフィルムは、熱的に耐
えられず使用できない。There is a polyimide film represented by the following formula. The present inventors have discovered that when forming these ITO films, it is important to hold the film at a high temperature, and that this high-temperature treatment is not just a heat treatment, but an E
It has been found that by performing CR sputtering, high conductivity can be obtained without affecting transparency. Regarding the specific temperature, the upper limit is the heat resistance limit of the polyimide film used, and the lower limit is the temperature at which the desired conductivity can be obtained, preferably 200~
Within the range of 400°C. Conventional PET films cannot withstand such high temperature heat treatment and cannot be used.
【０００８】[0008]
【実施例】以下、実施例により、本発明の導電性透明フ
ィルムおよびその製造方法について詳細に説明するが、
本発明はこれらの実施例に限定されるものではない。な
お導電性透明フィルムの光透過性は、紫外−可視光光度
計により測定した。[Examples] The conductive transparent film of the present invention and the method for producing the same will be explained in detail below with reference to Examples.
The present invention is not limited to these examples. The light transmittance of the conductive transparent film was measured using an ultraviolet-visible photometer.
【０００９】実施例１
透明フィルムとして前記構造式〔ＩＩ〕で表わされるポ
リイミドのフィルムを用いた。このポリイミドフィルム
は、１，４−ビス（３，４−ジカルボキシトリフルオロ
フェノキシ）テトラフルオロベンゼン二無水物と、２，
４，５，６−テトラフルオロ−１，３−フェニレンジア
ミンを反応させて得たポリアミド酸溶液を、シリコン基
板上にキャストした後、窒素雰囲気中７０℃で２時間、
１６０ ℃で１時間、２５０ ℃で３０分、３５０ ℃
で１時間加熱処理することにより作製した。（ポリアミ
ド酸溶液の製造は、特願平２−２５６８４３号の明細書
に示した実施例の方法によった。） 次に、ＥＣＲスパ
ッタ装置を用い、４×１０−４Ｐａの真空中で、厚さ約
４０μｍのポリイミドフィルムに、厚さ約１５００Åの
ＩＴＯ膜を形成した。このとき、ＩＴＯ膜形成中は、ポ
リイミドフィルムを３００ ℃に保持した。この導電性
ポリイミドフィルムの波長０．８ 〜１．７ μｍの範
囲での吸光スペクトルを測定したところ、図１に実線で
示すとおり、表面に吸着したわずかな水分の吸収以外に
ピークはなかった。また表面抵抗は３０Ω／□であった
。Example 1 A polyimide film represented by the above structural formula [II] was used as a transparent film. This polyimide film contains 1,4-bis(3,4-dicarboxytrifluorophenoxy)tetrafluorobenzene dianhydride, 2,
A polyamic acid solution obtained by reacting 4,5,6-tetrafluoro-1,3-phenylenediamine was cast onto a silicon substrate, and then heated at 70°C for 2 hours in a nitrogen atmosphere.
1 hour at 160 °C, 30 minutes at 250 °C, 350 °C
It was produced by heat treatment for 1 hour. (The polyamic acid solution was produced according to the method described in the example described in the specification of Japanese Patent Application No. 2-256843.) Next, using an ECR sputtering device, a An ITO film with a thickness of about 1500 Å was formed on a polyimide film with a thickness of about 40 μm. At this time, the polyimide film was maintained at 300° C. during the ITO film formation. When the absorption spectrum of this conductive polyimide film was measured in the wavelength range of 0.8 to 1.7 .mu.m, as shown by the solid line in FIG. 1, there were no peaks other than the absorption of a small amount of water adsorbed on the surface. Moreover, the surface resistance was 30Ω/□.
【００１０】実施例２
透明フィルムとして前記構造式〔ＩＩＩ 〕で表わされ
るポリイミドのフィルムを用いた。このポリイミドフィ
ルムは、１，４−ビス（３，４−ジカルボキシトリフル
オロフェノキシ）テトラフルオロベンゼン二無水物とビ
ス（２，３，５，６−テトラフルオロ−４−アミノフェ
ニル）エーテルを反応させて得たポリアミド酸溶液をシ
リコン基板上にキャストした後、窒素雰囲気中で実施例
１と同様の熱処理を行うことにより作製した。次に、実
施例１と同様の操作により、厚さ約４５μｍ のポリイ
ミドフィルムに、厚さ約１８００ÅのＩＴＯ膜を形成し
た。この導電性ポリイミドフィルムの波長０．８ 〜１
．７μｍ の範囲での吸光スペクトルを測定したところ
、表面に吸着したわずかな水分の吸収以外にピークはな
かった。また表面抵抗は３３Ω／□であった。Example 2 A polyimide film represented by the above structural formula [III] was used as a transparent film. This polyimide film is produced by reacting 1,4-bis(3,4-dicarboxytrifluorophenoxy)tetrafluorobenzene dianhydride and bis(2,3,5,6-tetrafluoro-4-aminophenyl)ether. The obtained polyamic acid solution was cast onto a silicon substrate, and then the same heat treatment as in Example 1 was performed in a nitrogen atmosphere. Next, by the same operation as in Example 1, an ITO film with a thickness of about 1800 Å was formed on a polyimide film with a thickness of about 45 μm. The wavelength of this conductive polyimide film is 0.8 to 1
．． When the absorption spectrum was measured in the 7 μm range, there were no peaks other than the absorption of a small amount of water adsorbed on the surface. Moreover, the surface resistance was 33Ω/□.
【００１１】実施例３
透明フィルムとして前記構造式〔ＩＶ〕で表わされるポ
リイミドのフィルムを用いた。このポリイミドフィルム
は、１，４−ジフルオロピロメリット酸二無水物とビス
（２，３，５，６−テトラフルオロ−４−アミノフェニ
ル）エーテルを反応させて得たポリアミド酸溶液をシリ
コン基板上にキャストした後、窒素雰囲気中で実施例１
と同様の熱処理を行うことにより作製した。次に、実施
例１と同様の操作により、厚さ約４０μｍ のポリイミ
ドフィルムに、厚さ約１６００ÅのＩＴＯ膜を形成した
。この導電性ポリイミドフィルムの波長０．８ 〜１．
７ μｍ の範囲での吸光スペクトルを測定したところ
、表面に吸着したわずかな水分の吸収以外にピークはな
かった。また表面抵抗は３５Ω／□であった。Example 3 A polyimide film represented by the above structural formula [IV] was used as a transparent film. This polyimide film is made by depositing a polyamic acid solution obtained by reacting 1,4-difluoropyromellitic dianhydride with bis(2,3,5,6-tetrafluoro-4-aminophenyl) ether on a silicon substrate. Example 1 in a nitrogen atmosphere after casting
It was manufactured by performing the same heat treatment as. Next, by the same operation as in Example 1, an ITO film with a thickness of about 1600 Å was formed on a polyimide film with a thickness of about 40 μm. The wavelength of this conductive polyimide film is 0.8 to 1.
When the absorption spectrum was measured in the 7 μm range, there were no peaks other than the absorption of a small amount of water adsorbed on the surface. Moreover, the surface resistance was 35Ω/□.
【００１２】比較例１
実施例１で作製した厚さ約４０μｍ のポリイミドフィ
ルムに、実施例１と同様の操作により、厚さ約１５００
ÅのＩＴＯ膜を形成した。ただし、実施例１とは異なり
、ＩＴＯ膜形成中のポリイミドフィルムの温度を１００
℃とした。
この導電性ポリイミドフィルムの波長０．８ 〜１．７
μｍ の範囲での吸光スペクトルを測定したところ、
表面に吸着したわずかな水分の吸収以外にピークはなか
った。しかし表面抵抗は２１０ Ω／□と、導電性は実
施例１のフィルムより劣っていた。Comparative Example 1 The polyimide film of about 40 μm thick produced in Example 1 was coated with a polyimide film of about 1500 μm thick by the same operation as in Example 1.
An ITO film with a thickness of .ANG. However, unlike Example 1, the temperature of the polyimide film during ITO film formation was
℃. The wavelength of this conductive polyimide film is 0.8 to 1.7
When the absorption spectrum was measured in the μm range,
There were no peaks other than the absorption of a small amount of water adsorbed on the surface. However, the surface resistance was 210 Ω/□, and the conductivity was inferior to that of the film of Example 1.
【００１３】比較例２
実施例２で作製した厚さ約４５μｍ のポリイミドフィ
ルムに、比較例１と同様の操作により、厚さ約１８００
ÅのＩＴＯ膜を形成した。この導電性ポリイミドフィル
ムの波長０．８ 〜１．７ μの範囲での吸光スペクト
ルを測定したところ、表面に吸着したわずかな水分の吸
収以外にピークはなかった。しかし表面抵抗は２２０
Ω／□と、導電性は実施例３のフィルムより劣っていた
。Comparative Example 2 The polyimide film with a thickness of about 45 μm produced in Example 2 was coated with a polyimide film having a thickness of about 1800 μm in the same manner as in Comparative Example 1.
An ITO film with a thickness of .ANG. When the absorption spectrum of this conductive polyimide film was measured in the wavelength range of 0.8 to 1.7 μm, there was no peak other than the absorption of a small amount of water adsorbed on the surface. However, the surface resistance is 220
The conductivity was Ω/□, which was inferior to the film of Example 3.
【００１４】比較例３
実施例３で作製した厚さ約４０μｍ のポリイミドフィ
ルムに、比較例１と同様の操作により、厚さ約１６００
ÅのＩＴＯ膜を形成した。この導電性ポリイミドフィル
ムの波長０．８ 〜１．７ μの範囲での吸光スペクト
ルを測定したところ、表面に吸着したわずかな水分の吸
収以外にピークはなかった。しかし表面抵抗は２４０
Ω／□と、導電性は実施例３のフィルムより劣っていた
。Comparative Example 3 The polyimide film with a thickness of about 40 μm produced in Example 3 was coated with a polyimide film having a thickness of about 1600 μm by the same operation as in Comparative Example 1.
An ITO film with a thickness of .ANG. When the absorption spectrum of this conductive polyimide film was measured in the wavelength range of 0.8 to 1.7 μm, there was no peak other than the absorption of a small amount of water adsorbed on the surface. However, the surface resistance is 240
The conductivity was Ω/□, which was inferior to the film of Example 3.
【００１５】比較例４
三角フラスコに、以下の構造式を持つ２，２−ビス（３
，４−ジカルボキシフェニル）ヘキサフルオロプロパン
二無水物Comparative Example 4 In an Erlenmeyer flask, 2,2-bis(3
,4-dicarboxyphenyl)hexafluoropropane dianhydride
【化８】
８．８８５ｇ （２０．０ｍｍｏｌ） と以下の構造式
で示される２，２′−ビス（トリフルオロメチル）−４
，４′−ジアミノビフェニル[Chemical formula 8] 8.885g (20.0mmol) and 2,2'-bis(trifluoromethyl)-4 represented by the following structural formula
,4'-diaminobiphenyl
【化９】
６．４０５ｇ （２０．０ｍｍｏｌ） およびＮ，Ｎ−
ジメチルアセトアミド８７ｇ を加え、以下実施例１と
同様の操作により、厚さ約４０μｍ のポリイミドフィ
ルムに、厚さ約１５００ÅのＩＴＯ膜を形成した。この
導電性ポリイミドフィルムの波長０．８〜１．７μｍ
の範囲で光の吸収を測定したところ、図１に破線で示す
とおり、１．１ μｍ 付近にＣ−Ｈ結合の伸縮振動の
３倍音による吸収が、また１．４ μｍ 付近には水分
の吸収とＣ−Ｈ結合の伸縮振動の高調波と変角振動の結
合音による吸収が、また１．６５μｍ 付近ではＣ−Ｈ
結合の伸縮振動の２倍音による吸収が現れた。表面抵抗
は３２Ω／□と、導電性は実施例１のフィルムはほぼ同
等であった。[Chemical formula 9] 6.405g (20.0mmol) and N,N-
After adding 87 g of dimethylacetamide, the same procedure as in Example 1 was carried out to form an ITO film with a thickness of about 1500 Å on a polyimide film with a thickness of about 40 μm. The wavelength of this conductive polyimide film is 0.8 to 1.7 μm.
When light absorption was measured in the range of Absorption by the harmonics of the stretching vibration of the C-H bond and the combined sound of the bending vibration is also observed, and around 1.65 μm, the C-H
Absorption by the second overtone of the stretching vibration of the bond appeared. The surface resistance was 32Ω/□, and the conductivity of the film of Example 1 was almost the same.
【００１６】[0016]
【発明の効果】以上説明したように、本発明によれば、
可撓性を有し導電性、耐熱性がともに優れ、近赤外光の
透過性の高い導電性フィルムを提供することができる。[Effects of the Invention] As explained above, according to the present invention,
It is possible to provide a conductive film that is flexible, has excellent conductivity and heat resistance, and has high near-infrared light transmittance.
【図１】本発明の実施例および従来例の導電性透明フィ
ルムの近赤外域における吸収スペクトルを示す図である
。FIG. 1 is a diagram showing absorption spectra in the near-infrared region of conductive transparent films of examples of the present invention and conventional examples.
Claims (2)
、Ｘは下記構造式 【化４】 ここで式中Ｒｆ′はパーフルオロアルキレン基を示す）
で表わされる繰り返し単位を有するポリイミドまたはポ
リイミド共重合体またはポリイミド混合物を、主構成要
素とする透明ポリイミドフィルムに、インジウム・スズ
酸化物膜が形成されていることを特徴とする導電性透明
フィルム。[Claim 1] The following general formula I [Chemical formula 1] (wherein R1 is the following structural formula [Chemical formula 2] R2 is the following structural formula [Chemical formula 3] where Rf is fluorine or a perfluoroalkyl group) , X has the following structural formula [Formula 4], where Rf' represents a perfluoroalkylene group)
1. A conductive transparent film comprising an indium tin oxide film formed on a transparent polyimide film whose main component is polyimide, a polyimide copolymer, or a polyimide mixture having a repeating unit represented by:
に、インジウム・スズ酸化物膜膜を形成するに当り、該
ポリイミドフィルムを高温で加熱することを特徴とする
導電性透明フィルムの製造方法。2. A method for producing a conductive transparent film, which comprises heating the polyimide film according to claim 1 at a high temperature when forming an indium tin oxide film on the polyimide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11910991A JP3105571B2 (en) | 1991-04-24 | 1991-04-24 | Conductive film and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11910991A JP3105571B2 (en) | 1991-04-24 | 1991-04-24 | Conductive film and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04323232A true JPH04323232A (en) | 1992-11-12 |
| JP3105571B2 JP3105571B2 (en) | 2000-11-06 |
Family
ID=14753140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11910991A Expired - Lifetime JP3105571B2 (en) | 1991-04-24 | 1991-04-24 | Conductive film and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3105571B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996026973A1 (en) * | 1995-02-28 | 1996-09-06 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Film having excellent corona resistance and insulated wire, coil, and motor using it as insulating material |
| US9029709B2 (en) | 2010-05-21 | 2015-05-12 | Nippon Mektron, Ltd. | Transparent flexible printed wiring board and method for manufacturing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006090448A1 (en) * | 2005-02-23 | 2006-08-31 | Jsr Corporation | Process for producing transparent conductive laminate, and touch panel |
-
1991
- 1991-04-24 JP JP11910991A patent/JP3105571B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996026973A1 (en) * | 1995-02-28 | 1996-09-06 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Film having excellent corona resistance and insulated wire, coil, and motor using it as insulating material |
| US6194665B1 (en) | 1995-02-28 | 2001-02-27 | Kanegafuchi Kagaku Kogyo Kabushiki | Film distinguished in coriona resistant characteristic and insulated wires, coils and motors comprising the film as an insulation material |
| US9029709B2 (en) | 2010-05-21 | 2015-05-12 | Nippon Mektron, Ltd. | Transparent flexible printed wiring board and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3105571B2 (en) | 2000-11-06 |
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