JPH04320386A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPH04320386A JPH04320386A JP3088367A JP8836791A JPH04320386A JP H04320386 A JPH04320386 A JP H04320386A JP 3088367 A JP3088367 A JP 3088367A JP 8836791 A JP8836791 A JP 8836791A JP H04320386 A JPH04320386 A JP H04320386A
- Authority
- JP
- Japan
- Prior art keywords
- cap body
- semiconductor laser
- protrusion
- transparent plate
- stem
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 30
- 239000000057 synthetic resin Substances 0.000 claims abstract description 30
- 239000000853 adhesive Substances 0.000 abstract description 12
- 230000001070 adhesive effect Effects 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000003776 cleavage reaction Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000007017 scission Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、レーザの発光素子とし
て半導体レーザチップを使用した半導体レーザ装置のう
ち、前記半導体レーザチップの部分をキャップ体にて覆
って成るカンシール型の半導体レーザ装置の改良に関す
るものである。[Field of Industrial Application] The present invention relates to an improvement of a can-seal type semiconductor laser device, which uses a semiconductor laser chip as a laser light emitting element, and in which a portion of the semiconductor laser chip is covered with a cap body. It is related to.
【0002】0002
【従来の技術】この種のカンシール型の半導体レーザ装
置は、金属製のステムに設けた突起の側面に、半導体レ
ーザチップを、レーザビームの出射面となる前方劈開面
が突起の突出方向に向くようにして固着し、前記突起に
、レーザビーム出射用の窓孔を穿設したキャップ体を被
嵌して、このキャップ体をステムに固着した構成になっ
ている。[Prior Art] This type of can-seal type semiconductor laser device has a semiconductor laser chip mounted on the side surface of a protrusion provided on a metal stem, with the front cleavage plane, which is the laser beam emission surface, facing the protrusion direction of the protrusion. A cap body having a window hole for laser beam emission is fitted onto the protrusion, and this cap body is fixed to the stem.
【0003】そして、前記半導体レーザチップを大気中
の湿気や塵埃から保護した状態にて、レーザビームを外
部に出射できるようにする手段として、従来は、例えば
実開昭62−58066号公報に記載されているように
、キャップ体をステムに対してシール状態にて固着する
一方、前記キャップ体における窓孔の箇所に、当該窓孔
を塞ぐガラス製の透明板を、ガラス半田にてシール状態
に固着することにより、キャップ体の内部を機密状態に
保持するとか、或いは、キャップ体の内部に透明な合成
樹脂を充填するとかしてしている。[0003] Conventionally, as a means for emitting a laser beam to the outside while protecting the semiconductor laser chip from atmospheric moisture and dust, there is a method described in, for example, Japanese Utility Model Application Laid-Open No. 62-58066. As shown in the figure, while the cap body is fixed to the stem in a sealed state, a transparent plate made of glass that closes the window hole in the cap body is sealed with glass solder at the location of the window hole. By fixing the cap, the inside of the cap is kept secret, or the inside of the cap is filled with transparent synthetic resin.
【0004】0004
【発明が解決しようとする課題】前者のように、キャッ
プ体に、その窓孔を塞ぐ透明板をガラス半田にて固着し
て、キャップ体の内部を密封状態にする手段を採用する
と、ガラス製の平滑な透明板を介してレーザビームを出
射できるので、高いビーム特性を確保できる利点を有す
る。[Problem to be Solved by the Invention] If a method is adopted in which, as in the former case, a transparent plate that closes the window hole is fixed to the cap body with glass solder to seal the inside of the cap body, the glass Since the laser beam can be emitted through the smooth transparent plate, it has the advantage of ensuring high beam characteristics.
【0005】しかし、その反面において、透明板をガラ
ス半田にてキャップ体に固着するには、ガラス半田をリ
ング状に製造して、これを透明板とキャップ体との間に
介挿してから高温に加熱して焼成せねばならず、ガラス
半田の製造工程と焼成工程とに多大の手間を要すること
に加えて、高温での焼成によって変色したキャップ体に
対して、酸洗いしたのちニッケルメッキを施すという後
処理工程を必要とするため、透明板をキャップ体に固着
することに要するコストが嵩み、半導体レーザ装置の価
格が大幅に高くなると言う問題があった。However, on the other hand, in order to fix the transparent plate to the cap body with glass solder, the glass solder is manufactured in the shape of a ring, which is inserted between the transparent plate and the cap body, and then heated at high temperature. In addition to requiring a great deal of effort in the glass solder manufacturing process and firing process, the cap body, which had discolored due to firing at high temperatures, had to be acid-washed and then nickel plated. Since this requires a post-processing step, the cost of fixing the transparent plate to the cap body increases, resulting in a problem in that the price of the semiconductor laser device increases significantly.
【0006】更に、ガラス半田に、当該ガラス半田とキ
ャップ体との熱膨張率の違いによって亀裂が発生するこ
とがないように、キャップ体としては、ガラスに近い熱
膨張率を有する特殊な金属を使用しなければならないば
かりか、キャップ体をステムに対してシール状態に固着
することに厳格な工程管理を要するため、製造コストが
一層嵩んでいた。Furthermore, in order to prevent cracks from occurring in the glass solder due to the difference in coefficient of thermal expansion between the glass solder and the cap body, the cap body is made of a special metal with a coefficient of thermal expansion close to that of glass. Not only does it have to be used, but also strict process control is required to fix the cap body to the stem in a sealed state, which further increases manufacturing costs.
【0007】他方、後者のように、キャップ体の内部に
透明な合成樹脂を充填する手段では、ガラス半田を製造
する工程や高温での焼成工程、及び後処理としての酸洗
い及びメッキ工程を必要とせず、キャップ体内に合成樹
脂を充填して乾燥等にて硬化させるだけの簡単な工程で
足り、しかも、キャップ体は完全なシール状態でステム
に固着する必要がないため、製造コストを格段に低減で
きる利点を有する。On the other hand, the latter method of filling the inside of the cap with transparent synthetic resin requires a glass solder manufacturing process, a high-temperature firing process, and pickling and plating processes as post-processing. A simple process of filling the synthetic resin into the cap body and curing it by drying etc. is sufficient, and the cap body does not need to be fixed to the stem in a completely sealed state, which significantly reduces manufacturing costs. It has the advantage of being able to reduce
【0008】しかし、その反面において、合成樹脂は、
乾燥等による硬化にてその外面を平滑面に形成すること
が困難であり、しかも、傷つきやすいため、高いビーム
特性を得ることが困難であると言う問題があった。また
、キャップ体の熱膨張によって合成樹脂に応力が加わり
、合成樹脂にひずみが生じるため、ビーム特性の安定性
が低いと言う点も問題であった。However, on the other hand, synthetic resins
There is a problem in that it is difficult to form the outer surface into a smooth surface by drying or other hardening, and it is also easily damaged, making it difficult to obtain high beam characteristics. Another problem was that the stability of the beam characteristics was low because stress was applied to the synthetic resin due to thermal expansion of the cap body, causing distortion in the synthetic resin.
【0009】本発明は、高いビーム特性を安定して維持
できるようにした半導体レーザ装置を、安価に提供でき
るようにすることを目的とするものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser device that can stably maintain high beam characteristics at a low cost.
【0010】0010
【課題を解決するための手段】この目的を達成するため
本発明は、ステムに設けた突起の側面に、半導体レーザ
チップを、レーザビームの出射面が前記突起の突出方向
に向くようにして固着し、前記ステムに、前記突起に被
嵌するキャップ体を固着し、該キャップ体の内部に透明
板を配設して成る半導体レーザ装置において、前記ステ
ムにおける突起の先端面に、前記透明板を、前記キャッ
プ体と非接触の状態で接着剤にて固着し、該透明板と前
記突起の側面との間に、透明な合成樹脂を、前記半導体
レーザチップを覆うように充填する構成にした。[Means for Solving the Problems] In order to achieve this object, the present invention fixes a semiconductor laser chip to the side surface of a protrusion provided on a stem with the laser beam emission surface facing in the protruding direction of the protrusion. In the semiconductor laser device, a cap body that fits on the protrusion is fixed to the stem, and a transparent plate is disposed inside the cap body, and the transparent plate is provided on the tip end surface of the protrusion in the stem. The semiconductor laser chip is fixed to the cap body with an adhesive in a non-contact state, and a transparent synthetic resin is filled between the transparent plate and the side surface of the protrusion so as to cover the semiconductor laser chip.
【0011】[0011]
【発明の作用・効果】このように構成すると、半導体レ
ーザチップからのレーザビームは、透明な合成樹脂を透
過して透明板から外部に出射されることになり、透明板
としてガラス板等の平滑なものを使用できるから、高い
ビーム特性を得ることができる。また、半導体レーザチ
ップが、透明な合成樹脂によって湿気や塵埃等から確実
に保護されていることと、透明板が突起に接着されてい
て、半導体レーザチップと透明板との間隔及び透明板の
姿勢が所定の状態に保持されること、及び、透明板や透
明な合成樹脂がキャップ体と非接触の状態にあり、キャ
ップ体が熱膨張しても、透明板や透明な合成樹脂にひず
みが生じることはないことの三者が相俟って、温度変化
等の外部環境の変化の影響を受けることなく、高いビー
ム特性を安定して維持できることになる。With this structure, the laser beam from the semiconductor laser chip passes through the transparent synthetic resin and is emitted to the outside from the transparent plate. High beam characteristics can be obtained because of the high beam quality. In addition, the semiconductor laser chip is reliably protected from moisture and dust by a transparent synthetic resin, and the transparent plate is glued to the protrusion, and the distance between the semiconductor laser chip and the transparent plate and the orientation of the transparent plate are also important. is maintained in a predetermined state, and the transparent plate and transparent synthetic resin are in a non-contact state with the cap body, so that even if the cap body expands thermally, distortion will occur in the transparent plate and transparent synthetic resin. The combination of these three factors means that high beam characteristics can be stably maintained without being affected by changes in the external environment such as temperature changes.
【0012】更に、キャップ体の内面と透明板との間に
隙間が形成されているから、キャップ体に作用した外部
衝撃が透明板及び半導体レーザチップに直接に作用する
ことを防止して、半導体レーザチップ装置の耐衝撃性も
向上できる。そして、キャップ体は、その熱膨張による
弊害を考慮する必要がないから、鋼板等の安価な素材を
使用できると共に、ステムに対してシール状態に固着す
る必要はないから、キャップ体をステムに固着すること
に要する手間を格段に低減できるのであり、これらキャ
ップ体の製造と取付けのコストを低減できることと、透
明板を接着剤にて突起に簡単に接着できること、及び、
透明な合成樹脂の充填は、乾燥により硬化する合成樹脂
や熱硬化性合成樹脂等を利用して至極容易に行えること
とが相俟って、製造コストを格段に低減できることにな
る。Furthermore, since a gap is formed between the inner surface of the cap body and the transparent plate, external impact acting on the cap body is prevented from directly acting on the transparent plate and the semiconductor laser chip. The impact resistance of the laser chip device can also be improved. Since there is no need to consider the adverse effects of thermal expansion for the cap body, inexpensive materials such as steel plates can be used, and since there is no need to fix the cap body in a sealed state to the stem, the cap body can be fixed to the stem. The cost of manufacturing and installing these cap bodies can be reduced significantly, and the transparent plate can be easily adhered to the protrusion with an adhesive.
Filling with a transparent synthetic resin can be carried out extremely easily by using a synthetic resin that hardens upon drying, a thermosetting synthetic resin, etc., and together with this, manufacturing costs can be significantly reduced.
【0013】従って本発明によれば、環境の変化に影響
されることなく高いビーム特性を維持できると共に耐衝
撃性を向上した半導体レーザ装置を、安価に提供できる
効果を有する。Therefore, according to the present invention, a semiconductor laser device that can maintain high beam characteristics without being affected by environmental changes and has improved impact resistance can be provided at a low cost.
【0014】[0014]
【実施例】次に、本発明の実施例を図面に基づいて説明
する。図において符号1は、炭素鋼等の金属にて円盤型
に形成したステム2と、上端に窓孔を穿設した金属製の
キャップ体3とを備えた半導体レーザ装置を示す。前記
ステム2の上面には、ブロック状の突起4を一体的に造
形しており、この突起4の側面に半導体基板5を固着し
て、該半導体基板5に、半導体レーザチップ6を、その
前方劈開面6a(外部へのレーザビーム出射面)が突起
4の突出方向に向き、後方劈開面6bが前記半導体基板
5に設けたモニター用フォトダイオード(図示せず)に
向かうようにしてダイボンディングする。Embodiments Next, embodiments of the present invention will be described based on the drawings. In the figure, reference numeral 1 indicates a semiconductor laser device including a stem 2 formed into a disk shape from metal such as carbon steel, and a metal cap body 3 having a window hole bored at its upper end. A block-shaped protrusion 4 is integrally formed on the upper surface of the stem 2. A semiconductor substrate 5 is fixed to the side surface of the protrusion 4, and a semiconductor laser chip 6 is mounted on the semiconductor substrate 5 in front thereof. Die bonding is performed so that the cleavage plane 6a (laser beam emission surface to the outside) faces the protrusion direction of the protrusion 4, and the rear cleavage plane 6b faces a monitoring photodiode (not shown) provided on the semiconductor substrate 5. .
【0015】更に、前記突起4の上面に、ガラス製等の
透明板7を、エポキシ樹脂系等の適宜素材の接着剤8に
て接着し、該透明板7と突起4とに、前記キャップ体3
を被嵌し、このキャップ体3を非接触の状態で被嵌し、
当該キャップ体3の下端に形成した外向きフランジ部3
bの全周を前記ステム2の上面に対して抵抗溶接するこ
とにより、ステム2に対して固着している。Furthermore, a transparent plate 7 made of glass or the like is adhered to the upper surface of the protrusion 4 using an adhesive 8 made of an appropriate material such as epoxy resin, and the cap body is attached to the transparent plate 7 and the protrusion 4. 3
and this cap body 3 is fitted in a non-contact state,
Outward flange portion 3 formed at the lower end of the cap body 3
The entire circumference of b is fixed to the stem 2 by resistance welding to the upper surface of the stem 2.
【0016】そして、透明板7の下面と突起4の側面と
の間に、シリコン系等の透明で接着性を有する合成樹脂
9を、前記半導体レーザチップ6を覆うようにして充填
する。前記透明な合成樹脂9は、乾燥によって硬化する
ものや熱硬化性のもの、或いはUV樹脂等を使用できる
。半導体レーザチップ6に対する三本のリード端子10
,11,11のうち一本のリード端子10を、前記ステ
ム2の下面に溶接にて固着し、他の二本のリード端子1
1,11は、ステム2に穿設した貫通孔からキャップ体
3の内部に挿入すると共に、ステム2に対して、ガラス
半田とか接着材による接着等にて固着している。A transparent and adhesive synthetic resin 9 such as silicone resin is filled between the lower surface of the transparent plate 7 and the side surface of the protrusion 4 so as to cover the semiconductor laser chip 6 . The transparent synthetic resin 9 may be one that hardens upon drying, a thermosetting resin, or a UV resin. Three lead terminals 10 for the semiconductor laser chip 6
, 11, 11 is fixed to the lower surface of the stem 2 by welding, and the other two lead terminals 1 are fixed to the lower surface of the stem 2.
1 and 11 are inserted into the cap body 3 through a through hole formed in the stem 2, and are fixed to the stem 2 by adhesion using glass solder or an adhesive.
【0017】以上の構成にすると、半導体レーザチップ
6の前方劈開面6aからのレーザビームは、透明な合成
樹脂9を透過して、表面を平滑に形成した透明板7から
外部に出射されるから、高いビーム特性を得ることがで
きる。また、半導体レーザチップ6は透明な合成樹脂9
にて保護されており、大気中の湿気や塵埃の影響を受け
ることはないこと、透明板7が突起4に接着されていて
、半導体レーザチップ6と透明板7との間隔寸法及び透
明板7の姿勢を一定に保持できること、及び、透明板7
や透明な合成樹脂9がキャップ体3とは非接触の状態に
あって、キャップ体3が熱膨張しても、透明板7や透明
な合成樹脂9にひずみが生じることはないことの三者が
相俟って、温度変化等の外部環境の変化の影響を受ける
ことなく、高いビーム特性を維持できることになる。With the above configuration, the laser beam from the front cleavage plane 6a of the semiconductor laser chip 6 passes through the transparent synthetic resin 9 and is emitted to the outside from the transparent plate 7 having a smooth surface. , high beam characteristics can be obtained. Furthermore, the semiconductor laser chip 6 is made of transparent synthetic resin 9.
The transparent plate 7 is bonded to the protrusion 4, and the distance between the semiconductor laser chip 6 and the transparent plate 7 and the transparent plate 7 are protected by The posture of the transparent plate 7 can be maintained constant, and the transparent plate 7
and the transparent synthetic resin 9 are in a non-contact state with the cap body 3, so that even if the cap body 3 thermally expands, no distortion occurs in the transparent plate 7 or the transparent synthetic resin 9. Together, this makes it possible to maintain high beam characteristics without being affected by changes in the external environment such as temperature changes.
【0018】更に、キャップ体3に対して透明板7は非
接触の状態にあるから、キャップ体3に作用した外部衝
撃が透明板7及び半導体レーザチップ6に直接に作用す
ることを防止して、半導体レーザチップ装置の耐衝撃性
も向上できる。そして、キャップ体3は、その熱膨張に
よる弊害を考慮する必要がないから、鋼板等の安価な素
材を使用できると共に、ステム2に対してシール状態に
固着する必要はないから、キャップ体3をステム2に固
着することに要する手間を格段に低減できるのであり、
これらキャップ体3の製造と取付けのコストを低減でき
ることと、透明板7を接着剤にて突起4に簡単に接着で
きること、及び、透明な合成樹脂9にて半導体レーザチ
ップ6を被覆することを、乾燥により硬化する合成樹脂
や熱硬化性合成樹脂等を液状の状態にて滴下することに
よって至極容易に行えることとが相俟って、製造コスト
を格段に低減できるのである。Furthermore, since the transparent plate 7 is in a non-contact state with respect to the cap body 3, external impact acting on the cap body 3 is prevented from directly acting on the transparent plate 7 and the semiconductor laser chip 6. , the impact resistance of the semiconductor laser chip device can also be improved. Since the cap body 3 does not need to take into account the adverse effects of thermal expansion, it is possible to use an inexpensive material such as a steel plate, and since it does not need to be fixed to the stem 2 in a sealed state, the cap body 3 The effort required to fix it to the stem 2 can be significantly reduced,
It is possible to reduce the cost of manufacturing and attaching these cap bodies 3, to be able to easily adhere the transparent plate 7 to the projections 4 with adhesive, and to cover the semiconductor laser chip 6 with the transparent synthetic resin 9. Coupled with the fact that this can be done extremely easily by dropping a synthetic resin that hardens upon drying, a thermosetting synthetic resin, etc. in a liquid state, manufacturing costs can be significantly reduced.
【0019】なお、図1に一点鎖線で示すように、透明
な合成樹脂9の表面に、フッ素樹脂等の非透湿性の合成
樹脂12を塗着しても良い。また、透明板7を突起4に
接着するための接着剤6として透明な接着剤を使用して
も良く、このようにすると、接着材8が半導体レーザチ
ップ6の前方劈開面6aに付着しても、レーザビームの
透過性を損なうことはないので、透明板7を接着するに
際して接着剤8を精密に塗布する必要がなく、製造の手
間をより一層低減できる利点を有する。As shown by the dashed line in FIG. 1, a moisture-impermeable synthetic resin 12 such as a fluororesin may be applied to the surface of the transparent synthetic resin 9. Further, a transparent adhesive may be used as the adhesive 6 for bonding the transparent plate 7 to the protrusion 4. In this case, the adhesive 8 may adhere to the front cleavage surface 6a of the semiconductor laser chip 6. However, since the transmittance of the laser beam is not impaired, there is no need to precisely apply the adhesive 8 when bonding the transparent plate 7, which has the advantage of further reducing the manufacturing effort.
【0020】更に、ステムとキャップ体とは金属にて形
成することには限らず、それぞれ合成樹脂等の他の素材
にて形成しても良いのであり、このように両者を合成樹
脂製にした場合には、キャップ体はステムに対して熱融
着にて固着しても良い。また、ステムを金属板にて形成
して、突起を切り起こしにて形成しても良いのである。Furthermore, the stem and the cap body are not limited to being made of metal, but may be made of other materials such as synthetic resin, and in this way, both are made of synthetic resin. In some cases, the cap body may be fixed to the stem by heat fusion. Alternatively, the stem may be formed from a metal plate and the protrusions may be formed by cutting and raising them.
【図1】本発明の実施例を示す正断面図である。FIG. 1 is a front sectional view showing an embodiment of the present invention.
【図2】図1のII−II視断面図である。FIG. 2 is a sectional view taken along line II-II in FIG. 1;
【図3】図1のIII − III視平断面図である。FIG. 3 is a plan cross-sectional view taken along line III--III in FIG. 1;
1 半導体レーザ装置
2 ステム
3 キャップ体
4 突起
5 半導体基板
6 半導体レーザチップ
6a 前方劈開面(レーザビーム出射面)7
透明板
8 接着剤
9 透明な合成樹脂1 Semiconductor laser device 2 Stem 3 Cap body 4 Protrusion 5 Semiconductor substrate 6 Semiconductor laser chip 6a Front cleavage plane (laser beam emission plane) 7
Transparent plate 8 Adhesive 9 Transparent synthetic resin
Claims (1)
ザチップを、レーザビームの出射面が前記突起の突出方
向に向くようにして固着し、前記ステムに、前記突起に
被嵌するキャップ体を固着し、該キャップ体の内部に透
明板を配設して成る半導体レーザ装置において、前記ス
テムにおける突起の先端面に、前記透明板を、前記キャ
ップ体と非接触の状態で接着剤にて固着し、該透明板と
前記突起の側面との間に、透明な合成樹脂を、前記半導
体レーザチップを覆うように充填したことを特徴とする
半導体レーザ装置。1. A semiconductor laser chip is fixed to a side surface of a protrusion provided on a stem with the laser beam emission surface facing in the protrusion direction of the protrusion, and a cap body is fitted to the stem to fit over the protrusion. In the semiconductor laser device, the transparent plate is fixed to the cap body and a transparent plate is disposed inside the cap body. A semiconductor laser device, wherein a transparent synthetic resin is filled between the transparent plate and the side surface of the protrusion so as to cover the semiconductor laser chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3088367A JP2823381B2 (en) | 1991-04-19 | 1991-04-19 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3088367A JP2823381B2 (en) | 1991-04-19 | 1991-04-19 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04320386A true JPH04320386A (en) | 1992-11-11 |
JP2823381B2 JP2823381B2 (en) | 1998-11-11 |
Family
ID=13940829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3088367A Expired - Fee Related JP2823381B2 (en) | 1991-04-19 | 1991-04-19 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2823381B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4444618A1 (en) * | 1993-12-14 | 1995-06-22 | Fuji Electric Co Ltd | Semiconductor laser |
US5485479A (en) * | 1990-11-07 | 1996-01-16 | Fuji Electric Co., Ltd. | Semiconductor laser device encapsulated in a transparent resin layer |
US5488623A (en) * | 1990-11-07 | 1996-01-30 | Fuji Electric Co., Ltd. | Mold-type semiconductor laser device with reduced light-emitting point displacement during operation |
JP2021530113A (en) * | 2018-07-19 | 2021-11-04 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH | Semiconductor laser |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01235260A (en) * | 1988-03-15 | 1989-09-20 | Rohm Co Ltd | Manufacture of cap for optical element |
JPH02139984A (en) * | 1988-11-18 | 1990-05-29 | Mitsubishi Electric Corp | Semiconductor laser device and its manufacture |
-
1991
- 1991-04-19 JP JP3088367A patent/JP2823381B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01235260A (en) * | 1988-03-15 | 1989-09-20 | Rohm Co Ltd | Manufacture of cap for optical element |
JPH02139984A (en) * | 1988-11-18 | 1990-05-29 | Mitsubishi Electric Corp | Semiconductor laser device and its manufacture |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5485479A (en) * | 1990-11-07 | 1996-01-16 | Fuji Electric Co., Ltd. | Semiconductor laser device encapsulated in a transparent resin layer |
US5488623A (en) * | 1990-11-07 | 1996-01-30 | Fuji Electric Co., Ltd. | Mold-type semiconductor laser device with reduced light-emitting point displacement during operation |
US5590144A (en) * | 1990-11-07 | 1996-12-31 | Fuji Electric Co., Ltd. | Semiconductor laser device |
DE4444618A1 (en) * | 1993-12-14 | 1995-06-22 | Fuji Electric Co Ltd | Semiconductor laser |
JP2021530113A (en) * | 2018-07-19 | 2021-11-04 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH | Semiconductor laser |
US11749959B2 (en) | 2018-07-19 | 2023-09-05 | Osram Oled Gmbh | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JP2823381B2 (en) | 1998-11-11 |
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