JPH04314725A - Resin composition - Google Patents
Resin compositionInfo
- Publication number
- JPH04314725A JPH04314725A JP22001791A JP22001791A JPH04314725A JP H04314725 A JPH04314725 A JP H04314725A JP 22001791 A JP22001791 A JP 22001791A JP 22001791 A JP22001791 A JP 22001791A JP H04314725 A JPH04314725 A JP H04314725A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- curative
- resin
- phenol novolac
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011342 resin composition Substances 0.000 title description 7
- 239000003822 epoxy resin Substances 0.000 claims abstract description 23
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 23
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229920003986 novolac Polymers 0.000 claims abstract description 21
- 125000001624 naphthyl group Chemical group 0.000 claims abstract description 14
- 125000005462 imide group Chemical group 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000011256 inorganic filler Substances 0.000 claims description 3
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 238000005476 soldering Methods 0.000 abstract description 12
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 125000003700 epoxy group Chemical group 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000000945 filler Substances 0.000 abstract 2
- 238000013329 compounding Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 150000003949 imides Chemical group 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- WHHGLZMJPXIBIX-UHFFFAOYSA-N decabromodiphenyl ether Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1OC1=C(Br)C(Br)=C(Br)C(Br)=C1Br WHHGLZMJPXIBIX-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、高集積度IC封止用樹
脂組成物に適する半田耐熱性に優れたエポキシ樹脂組成
物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition having excellent solder heat resistance and suitable for use as a resin composition for encapsulating highly integrated ICs.
【0002】0002
【従来の技術】従来、ダイオード、トランジスタ、集積
回路等の電子部品を熱硬化性樹脂で封止しているが、特
に集積回路では耐熱性、耐湿性に優れた0−クレゾール
ノボラックエポキシ樹脂をノボラック型フェノール樹脂
で硬化させたエポキシ樹脂が用いられている。ところが
近年、集積回路の高集積化に伴いチップがだんだん大型
化し、かつパッケージは従来のDIPタイプから表面実
装化された小型、薄型のフラットパッケージ、SOP、
SOJ、PLCCに変わってきている。[Prior Art] Conventionally, electronic components such as diodes, transistors, and integrated circuits have been encapsulated with thermosetting resin, but especially for integrated circuits, 0-cresol novolac epoxy resin, which has excellent heat resistance and moisture resistance, has been encapsulated with novolac resin. Epoxy resin cured with phenolic resin is used. However, in recent years, as integrated circuits have become more highly integrated, chips have become larger and larger, and packages have changed from the conventional DIP type to surface-mounted small, thin flat packages, SOP,
They are changing to SOJ and PLCC.
【0003】即ち大型チップを小型で薄いパッケージに
封入することにより、応力によりクラック発生、これら
のクラックによる耐湿性の低下等の問題が大きくクロー
ズアップされてきている。特に半田づけの工程において
急激に200℃以上の高温にさらされることによりパッ
ケージの割れや樹脂とチップの剥離により耐湿性が劣化
してしまうといった問題点がでてきている。That is, when a large chip is encapsulated in a small and thin package, problems such as the generation of cracks due to stress and a decrease in moisture resistance due to these cracks have been brought into focus. In particular, problems have arisen in that moisture resistance deteriorates due to cracking of the package and peeling of the resin and chip due to sudden exposure to high temperatures of 200° C. or higher during the soldering process.
【0004】これらの大型チップを封止するのに適した
、信頼性の高い封止樹脂用組成物の開発が望まれてきて
いる。これらの問題を解決するために半田付け時の熱衝
撃を緩和する目的で、熱可塑性オリゴマーの添加(特開
昭62−115849号公報)や各種シリコーン化合物
の添加(特開昭62−11585号公報、62−116
654号公報、62−128162号公報)、更にはシ
リコーン変性(特開昭62−136860号公報)など
の手法で対処しているがいずれも半田付け時にパッケー
ジにクラックが生じてしまい信頼性の優れた半導体封止
用エポキシ樹脂組成物を得るまでには至らなかった。It has been desired to develop a highly reliable sealing resin composition suitable for sealing these large chips. To solve these problems, in order to alleviate the thermal shock during soldering, thermoplastic oligomers are added (Japanese Patent Application Laid-Open No. 115849/1984) and various silicone compounds are added (Japanese Patent Application Laid-open No. 11585/1983). , 62-116
654 Publication, 62-128162 Publication), and silicone modification (Japanese Patent Application Laid-open No. 62-136860), but all of these methods cause cracks in the package during soldering, resulting in poor reliability. However, it has not been possible to obtain an epoxy resin composition for semiconductor encapsulation.
【0005】[0005]
【発明が解決しようとする課題】その目的とするところ
は、半田耐熱性および耐湿性に優れた半導体封止用エポ
キシ樹脂組成物を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation that has excellent soldering heat resistance and moisture resistance.
【0006】[0006]
【課題を解決するための手段】本発明者らは、これらの
問題を解決するために鋭意研究を進め、次の組成を有す
る樹脂組成物を見出した。エポキシ樹脂と、下記式(1
)で示されるイミド環およびナフタレン環含有フェノー
ルノボラック系硬化剤を総硬化剤量中に30〜100重
量%配合し、[Means for Solving the Problems] In order to solve these problems, the present inventors conducted extensive research and discovered a resin composition having the following composition. Epoxy resin and the following formula (1
) A phenol novolac curing agent containing an imide ring and a naphthalene ring is blended in an amount of 30 to 100% by weight in the total amount of curing agent,
【0007】[0007]
【化2】
更に硬化促進剤と無機充填材を配合し、上記問題点を改
良しうる半導体封止用樹脂組成物が得られることを見い
出し、本発明を完成するに至ったものである。##STR00002## The present inventors have discovered that a resin composition for semiconductor encapsulation that can improve the above-mentioned problems can be obtained by further blending a curing accelerator and an inorganic filler, leading to the completion of the present invention.
【0008】本発明で用いられる(A)成分としてのエ
ポキシ樹脂は、1分子中に2ケ以上のエポキシ基を有す
るもの全般をいう。たとえば、ビスフェノールA型エポ
キシ樹脂、ビフェニル型エポキシ樹脂、ノボラック型エ
ポキシ樹脂、あるいはこれらの変性物を示す。これらの
エポキシ樹脂において、Na+ 、Cl− 等のイオン
性不純物ができるだけ少ないものが望ましい。[0008] The epoxy resin as component (A) used in the present invention refers to any resin having two or more epoxy groups in one molecule. For example, bisphenol A type epoxy resin, biphenyl type epoxy resin, novolak type epoxy resin, or modified products thereof are shown. It is desirable that these epoxy resins contain as few ionic impurities as Na+, Cl-, etc. as possible.
【0009】本発明で用いられる(B)成分としてのイ
ミド環およびナフタレン環含有フェノールノボラック硬
化剤は、半田耐熱性に有効な効果、すなわち低吸水性、
強じん性、金属に対する接着性が良好なのに加え、Tg
や硬化性が高いという特徴を有する。この効果は分子構
造に起因する。分子の側鎖にナフタレン、すなわち疎水
の平面構造を有しており、パッキングが良いために、低
吸水性と強じん性が達成される。また、イミド環のN、
Oによる極性構造の導入により金属との接着性も向上し
、良好な半田耐熱性および半田処理後の耐湿性を達成す
ることができる。The imide ring- and naphthalene ring-containing phenolic novolak curing agent as component (B) used in the present invention has effective effects on soldering heat resistance, namely low water absorption,
In addition to having good toughness and adhesion to metals, Tg
It has the characteristics of high hardness and hardenability. This effect is due to the molecular structure. The side chain of the molecule contains naphthalene, which has a hydrophobic planar structure, which allows for good packing, resulting in low water absorption and toughness. Also, N of the imide ring,
The introduction of a polar structure by O also improves adhesion to metals, making it possible to achieve good soldering heat resistance and moisture resistance after soldering.
【0010】さらに、半導体封止用樹脂組成物で大切な
パラメーターとして、成形性やTgがあげられるが、こ
の硬化剤はこれらもクリアしている。ナフタレン環、イ
ミド環によりTgが向上するし、硬化性も良好である。
式(1)で示されるイミド環およびナフタレン環含有フ
ェノールノボラックにおいて、n/l+m+nの値は0
.05以上0.5以下が望ましい。0.05未満の時は
、イミド環およびナフタレン環による効果が少なく、半
田耐熱性が不十分である。0.5より大きい時は、フェ
ノール性OHの量が非常に少ないため、硬化性、Tg等
が低下する。Furthermore, moldability and Tg are important parameters for resin compositions for semiconductor encapsulation, and this curing agent satisfies these requirements. The naphthalene ring and imide ring improve Tg and provide good curability. In the imide ring- and naphthalene ring-containing phenol novolak represented by formula (1), the value of n/l+m+n is 0.
.. 05 or more and 0.5 or less is desirable. When it is less than 0.05, the effect of the imide ring and naphthalene ring is small and the soldering heat resistance is insufficient. When it is larger than 0.5, the amount of phenolic OH is very small, resulting in a decrease in curability, Tg, etc.
【0011】式(1)で示されるイミド環およびナフタ
レン環含有フェノールノボラックは、総硬化剤量中の3
0〜100重量%を占める必要がある。30重量%未満
だと上記の効果が十分に発現せず、半田耐熱性が低下す
る。なお、併用する硬化剤としては、分子中にフェノー
ル性OHを有するものならいずれでもよいが例えばフェ
ノールノボラック硬化剤などがあげられる。The imide ring- and naphthalene ring-containing phenol novolak represented by formula (1) accounts for 3% of the total amount of curing agent.
It is necessary to account for 0 to 100% by weight. If it is less than 30% by weight, the above effects will not be sufficiently exhibited and the soldering heat resistance will decrease. The curing agent used in combination may be any curing agent as long as it has phenolic OH in its molecule, such as a phenol novolac curing agent.
【0012】本発明の(C)成分としての硬化促進剤は
エポキシ基とフェノール性水酸基との反応を促進するも
のであれば良く、一般に封止用材料に使用されているも
のを広く使用することができ、例えばBDMA等の第3
級アミン類、イミダゾール類、1、8−ジアザビシクロ
〔5、4、0〕ウンデセン−7、トリフェニルホスフィ
ン等の有機リン化合物等が単独もしくは2種以上混合し
て用いられる。本発明の(D)成分としての無機充填材
としては結晶性シリカ、溶融シリカ、アルミナ、炭酸カ
ルシウム、タルク、マイカ、ガラス繊維等が挙げられ、
これらは1種又は2種以上混合して使用される。これら
の中で特に結晶性シリカまたは溶融シリカが好適に用い
られる。The curing accelerator as component (C) of the present invention may be any one as long as it promotes the reaction between the epoxy group and the phenolic hydroxyl group, and a wide variety of those commonly used in sealing materials may be used. For example, 3rd party such as BDMA etc.
Organic phosphorus compounds such as class amines, imidazoles, 1,8-diazabicyclo[5,4,0]undecene-7, and triphenylphosphine are used alone or in combination of two or more. Examples of the inorganic filler as component (D) of the present invention include crystalline silica, fused silica, alumina, calcium carbonate, talc, mica, glass fiber, etc.
These may be used alone or in a mixture of two or more. Among these, crystalline silica or fused silica is particularly preferably used.
【0013】その他必要に応じてワックス類等の離型剤
、ヘキサブロムベンゼン、デカブロムビフェニルエーテ
ル、三酸化アンチモン等の難燃剤、カーボンブラック、
ベンガラ等の着色剤、シランカップリング剤その他熱可
塑性樹脂等を適宜添加配合することができる。本発明の
半導体封止用エポキシ樹脂組成物を製造するには一般的
な方法としては、所定の配合比の原料をミキサー等によ
って十分に混合した後、更にロールやニーダー等により
溶融混練処理し、次いで冷却固化させて適当な大きさに
粉砕することにより容易に製造することが出来る。[0013] In addition, mold release agents such as waxes, flame retardants such as hexabromobenzene, decabromo biphenyl ether, and antimony trioxide, carbon black,
A coloring agent such as red iron oxide, a silane coupling agent, a thermoplastic resin, etc. may be appropriately added and blended. A general method for producing the epoxy resin composition for semiconductor encapsulation of the present invention is to thoroughly mix raw materials in a predetermined blending ratio using a mixer, etc., and then melt-knead them using a roll, kneader, etc. It can then be easily produced by cooling, solidifying, and pulverizing into an appropriate size.
【0014】[0014]
【実施例】以下、本発明を実施例および比較例で具体的
に示す。[Examples] The present invention will now be specifically illustrated by Examples and Comparative Examples.
【0015】実施例1
0−クレゾールノボラック型エポキシ樹脂
90重量部
(軟化点65℃、エポキシ当量210)
臭素化ビスフェノールA型エポキシ樹脂
(軟化点65℃、臭素含有率37%、エポキシ当
量370) 10重量部 イミド環および
ナフタレン環含有フェノールノボラック樹脂(ニ)95
重量部 破砕状溶融シリカ
300重量部 三酸化アンチモン
10重量部 シラン
カップリング剤
2
重量部 トリフェニルホスフィン
2重量部 カーボンブラック
3重量部 カルナ
バワックス
3重量部を常温で十分に混合し、更に95〜100℃
で2軸ロールにより混練し、冷却後粉砕して成形材料と
し、これをタブレット化して半導体封止用エポキシ樹脂
組成物を得た。この材料をトランスファー成形機(成形
条件:金型温度175℃、硬化時間2分)を用いて成形
し、得られた成形品を175℃、8時間で後硬化し評価
した。結果を表1に示す。Example 1 0-cresol novolak type epoxy resin
90 parts by weight
(Softening point: 65°C, epoxy equivalent: 210)
Brominated bisphenol A type epoxy resin
(Softening point: 65°C, bromine content: 37%, epoxy equivalent: 370) 10 parts by weight Phenol novolak resin containing imide ring and naphthalene ring (d) 95
Part by weight: Crushed fused silica
300 parts by weight antimony trioxide
10 parts by weight Silane coupling agent
2
Part by weight Triphenylphosphine
2 parts by weight carbon black
3 parts by weight carnauba wax
Thoroughly mix 3 parts by weight at room temperature and further heat to 95-100℃
The mixture was kneaded using twin-screw rolls, cooled, and then ground to obtain a molding material, which was then made into tablets to obtain an epoxy resin composition for semiconductor encapsulation. This material was molded using a transfer molding machine (molding conditions: mold temperature 175°C, curing time 2 minutes), and the resulting molded product was post-cured at 175°C for 8 hours and evaluated. The results are shown in Table 1.
【0016】実施例2
実施例1のイミド環およびナフタレン環含有フェノール
ノボラック樹脂(ニ)95重量部を、イミド環およびナ
フタレン環含有フェノールノボラック樹脂(ニ)60重
量部とフェノールノボラック樹脂(軟化点110℃、O
H当量110)20重量部に変更した以外は、実施例1
と同様にして半導体封止用エポキシ樹脂組成物を得た。
この半導体封止用エポキシ樹脂組成物の評価結果を表1
に示す。Example 2 95 parts by weight of the imide ring- and naphthalene ring-containing phenol novolak resin (2) of Example 1 were mixed with 60 parts by weight of the imide ring- and naphthalene ring-containing phenol novolak resin (2) and the phenol novolac resin (softening point 110). °C, O
Example 1 except that the H equivalent was changed to 110) 20 parts by weight.
An epoxy resin composition for semiconductor encapsulation was obtained in the same manner as above. Table 1 shows the evaluation results of this epoxy resin composition for semiconductor encapsulation.
Shown below.
【0017】実施例3、4、比較例1〜4同様にして表
1に示す組成の半導体封止用エポキシ樹脂組成物を得た
。この結果を表1に示す。Epoxy resin compositions for semiconductor encapsulation having the compositions shown in Table 1 were obtained in the same manner as in Examples 3 and 4 and Comparative Examples 1 to 4. The results are shown in Table 1.
【0018】[0018]
【表1】
イ.0−クレゾールノボラックエポキシ樹脂軟化点65
℃、エポキシ当量210
ロ.ビフェニル型エポキシ化合物 式(2)エポキシ
当量195[Table 1] A. 0-Cresol novolac epoxy resin softening point 65
°C, epoxy equivalent 210 b. Biphenyl type epoxy compound Formula (2) Epoxy equivalent 195
【0019】[0019]
【化3】
ハ.臭素化ビスフェノールA型エポキシ樹脂軟化点65
℃、臭素含有率37%、エポキシ当量370ニ.イミド
環およびナフタレン環含有フェノールノボラック樹脂
式(3)
軟化点120℃、OH当量193[C3] C. Brominated bisphenol A type epoxy resin softening point 65
°C, bromine content 37%, epoxy equivalent 370 n. Phenolic novolac resin containing imide and naphthalene rings
Formula (3) Softening point: 120°C, OH equivalent: 193
【0020】[0020]
【化4】
ホ.イミド環およびナフタレン環含有フェノールノボラ
ック樹脂 式(4)
軟化点110℃、OH当量119[C4] E. Phenol novolac resin containing imide ring and naphthalene ring Formula (4) Softening point 110°C, OH equivalent 119
【0021】[0021]
【化5】
ヘ.イミド環およびナフタレン環含有フェノールノボラ
ック樹脂 式(5)
軟化点148℃、OH当量520[C5] f. Phenol novolac resin containing imide ring and naphthalene ring Formula (5) Softening point 148°C, OH equivalent 520
【0022】[0022]
【化6】 ト.フェノールノボラック樹脂 軟化点110℃、OH当量110[C6] to. phenolic novolak resin Softening point: 110℃, OH equivalent: 110
【0023】評価方法
※1 175℃、2分成形後、金型が開いてから10
秒後の成形品のバコール硬度。
※2 テンシロン曲げ試験機を用い、250℃、負荷
速度10mm/minで測定。スパン64mm、幅10
mm、厚み4mmの3点曲げ。
※3 成形品(チップサイズ36mm2 、パッケー
ジ厚2mm)20ヶについて、 85℃
、85%RHの水蒸気下で72時間処理後、240℃の
IRリフ ロー処理を行いクラックの発
生した個数を示す。
※4 成形品(チップサイズ36mm2 、パッケー
ジ厚2mm)20ケについて、 215
℃のVPS処理を行なったのち、125℃、100%R
Hの水蒸 気下で500時間処理を行い
、ICチップの故障が生じた個数を示す。Evaluation method *1 After molding at 175°C for 2 minutes, 10 minutes after the mold opens
Bacall hardness of the molded product after seconds. *2 Measured using a Tensilon bending tester at 250°C and a loading rate of 10mm/min. Span 64mm, width 10
3-point bending with a thickness of 4 mm. *3 85℃ for 20 molded products (chip size 36mm2, package thickness 2mm)
After 72 hours of treatment under water vapor at 85% RH, IR reflow treatment at 240°C was performed, and the number of cracks generated is shown. *4 For 20 molded products (chip size 36mm2, package thickness 2mm), 215
After VPS treatment at ℃, 125℃, 100%R
The number of IC chips that failed after 500 hours of treatment under H water vapor is shown.
【0024】[0024]
【発明の効果】本発明の組成物は半田耐熱性および耐湿
性に優れており、高集積度IC封止用樹脂組成物として
非常に信頼性の高いものである。[Effects of the Invention] The composition of the present invention has excellent soldering heat resistance and moisture resistance, and is extremely reliable as a resin composition for encapsulating highly integrated ICs.
Claims (1)
1)で示されるイミド環およびナフタレン環含有フェノ
ールノボラック硬化剤 【化1】 を総硬化剤量に対して30〜100重量%含有するフェ
ノールノボラック系硬化剤、(C)硬化促進剤及び(D
)無機充填材を必須成分とすることを特徴とする半導体
封止用エポキシ樹脂組成物。Claim 1: (A) epoxy resin, (B) the following formula (
1) A phenol novolak curing agent containing an imide ring and a naphthalene ring containing phenol novolak curing agent [Chemical 1] from 30 to 100% by weight based on the total amount of curing agent, (C) a curing accelerator, and (D)
) An epoxy resin composition for semiconductor encapsulation characterized by containing an inorganic filler as an essential component.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03220017A JP3129477B2 (en) | 1991-02-19 | 1991-08-30 | Resin composition |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10808591 | 1991-02-19 | ||
JP3-108085 | 1991-02-19 | ||
JP03220017A JP3129477B2 (en) | 1991-02-19 | 1991-08-30 | Resin composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04314725A true JPH04314725A (en) | 1992-11-05 |
JP3129477B2 JP3129477B2 (en) | 2001-01-29 |
Family
ID=26448045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP03220017A Expired - Fee Related JP3129477B2 (en) | 1991-02-19 | 1991-08-30 | Resin composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3129477B2 (en) |
-
1991
- 1991-08-30 JP JP03220017A patent/JP3129477B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3129477B2 (en) | 2001-01-29 |
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