JPH04294589A - Method for coating cleavage plane of semiconductor laser type device - Google Patents

Method for coating cleavage plane of semiconductor laser type device

Info

Publication number
JPH04294589A
JPH04294589A JP6006791A JP6006791A JPH04294589A JP H04294589 A JPH04294589 A JP H04294589A JP 6006791 A JP6006791 A JP 6006791A JP 6006791 A JP6006791 A JP 6006791A JP H04294589 A JPH04294589 A JP H04294589A
Authority
JP
Japan
Prior art keywords
semiconductor laser
coating
cleavage
holder
laser type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6006791A
Other languages
Japanese (ja)
Inventor
Junichi Hashimoto
順一 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP6006791A priority Critical patent/JPH04294589A/en
Publication of JPH04294589A publication Critical patent/JPH04294589A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Abstract

PURPOSE:To provide a method of coating the cleavage plane of a semiconductor laser type device in a sort time through a simple process and, in addition, at a high manufacturing yield. CONSTITUTION:Semiconductor laser chip bars 1 are held by a fixing jig, with their cleavage planes 4a and 4b being exposed, and the jig is set in a rotary holder 10. A coating gas is blown upon the cleavage planes 4a and 4b while the bars 1 are rotated by rotating the holder 10. When the coating gas is blown upon the bars 1 in such way, protective films are uniformly formed on the planes 4a and 4b. When the holder 10 is rotated, the bars 1 are held in such a way that one electrode 2b is pressurized and the other electrode 2a is pressed against the internal wall surface of a supporting frame 6 by means of springs 7a and 7b.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、光通信,光計測,光記
録や光情報処理等の諸分野において光源,光スイッチや
光増幅器等の光機能デバイスとして用いられる半導体レ
ーザ型デバイスのへき開面コーティング方法に関するも
のである。
[Industrial Application Field] The present invention relates to the cleavage plane of semiconductor laser type devices used as optical functional devices such as light sources, optical switches, and optical amplifiers in various fields such as optical communication, optical measurement, optical recording, and optical information processing. The present invention relates to a coating method.

【0002】0002

【従来の技術】近年、半導体レーザ型デバイスの高機能
化,高信頼性化を目的として、そのへき開面にSiO2
 やAl2 O3 からなる薄膜をコーティングするこ
とが行われている。そのコーティング方法としては、従
来、例えば特開平1−204490号公報に開示された
方法がある。つまり、同方法では半導体レーザ・チップ
・バーをホルダにアレイ状に配置し、まず、一方のへき
開面にコーティングを施す。その後、これら各チップ・
バーをホルダから取り出し、裏返して他方のへき開面を
露出させてホルダに再配置し、他方のへき開面にコーテ
ィングを施していた。
[Prior Art] In recent years, in order to improve the functionality and reliability of semiconductor laser type devices, SiO2 has been added to the cleavage plane.
Coating with a thin film of Al2O3 or Al2O3 has been carried out. As a coating method, there is a conventional method disclosed in, for example, Japanese Patent Application Laid-Open No. 1-204490. That is, in this method, semiconductor laser chip bars are arranged in an array on a holder, and one cleavage surface is first coated. Then, each of these chips
The bar was removed from the holder, flipped over to expose the other cleavage surface, and replaced in the holder, and the coating was applied to the other cleavage surface.

【0003】0003

【発明が解決しようとする課題】しかしながら、上記従
来のコーティング方法には次のような課題が有った。つ
まり、チップ・バーは微小であるため、他方のへき開面
をコーティングする際にチップ・バーをホルダから取り
出し、これを裏返して再度ホルダに固定する作業は困難
であった。また、この作業中にへき開面を傷付けてしま
う可能性が高いため、半導体チップの製造歩留まりを高
めることが出来なかった。また、チップ・バーを並べ直
すためにホルダからチップ・バーを取り出す際には、コ
ーティング装置内を一旦大気圧に戻して作業を行う必要
がある。そして、作業後に再びコーティング装置内の真
空引きを行い、装置内を真空状態に再設定しなおさなけ
ればならなかった。このため、半導体レーザ・チップの
製造時間が長くなっていた。
[Problems to be Solved by the Invention] However, the above-mentioned conventional coating method has the following problems. In other words, since the chip bar is minute, it is difficult to take the chip bar out of the holder, turn it over, and fix it in the holder again when coating the other cleavage surface. Furthermore, since there is a high possibility that the cleavage plane will be damaged during this operation, it has been impossible to increase the manufacturing yield of semiconductor chips. Furthermore, when taking out the chip bars from the holder in order to rearrange them, it is necessary to once return the inside of the coating apparatus to atmospheric pressure. Then, after the work was completed, the inside of the coating apparatus had to be evacuated again and the inside of the apparatus had to be reset to a vacuum state. For this reason, the manufacturing time for semiconductor laser chips has become long.

【0004】0004

【課題を解決するための手段】本発明はこのような課題
を解消するためになされたもので、半導体レーザ型デバ
イスをへき開面を露出させて保持し、デバイスを回転さ
せながらへき開面にコーティング・ガスを照射し、へき
開面に保護膜を形成するものである。
[Means for Solving the Problems] The present invention has been made to solve the above problems, and involves holding a semiconductor laser type device with the cleavage plane exposed, and coating/coating the cleavage plane while rotating the device. A protective film is formed on the cleavage plane by irradiating gas.

【0005】また、半導体レーザ型デバイスは、弾性体
により一方の電極面が押圧されて他方の電極面が支持枠
の内壁面に押し付けられて保持されるものである。
Further, a semiconductor laser type device is held by an elastic body having one electrode surface pressed and the other electrode surface pressed against an inner wall surface of a support frame.

【0006】[0006]

【作用】デバイスを回転させてへき開面にコーティング
・ガスを照射するため、対向する各へき開面に同時にコ
ーティングが施される。そのため、途中で真空を破らず
に両へき開面のコーティングが可能となり、従来の方法
に比べて製造時間の短縮が期待できる。
[Operation] Since the device is rotated to irradiate the coating gas onto the cleavage planes, each opposing cleavage plane is coated at the same time. Therefore, it is possible to coat both cleavage surfaces without breaking the vacuum during the process, and it is expected that manufacturing time will be shortened compared to conventional methods.

【0007】また、デバイスを弾性体により支持枠に押
し付けて保持するため、デバイスの着脱が容易に行える
Furthermore, since the device is held against the support frame by the elastic body, the device can be easily attached and detached.

【0008】[0008]

【実施例】次に、本発明の一実施例による半導体レーザ
のへき開面コーティング方法について詳述する。
[Embodiment] Next, a method for coating a cleavage surface of a semiconductor laser according to an embodiment of the present invention will be described in detail.

【0009】図2は本実施例による方法によってコーテ
ィングが施される半導体レーザ・チップ・バー1を示す
斜視図である。チップ・バー1は対向する各電極2a,
2bとこれに挟まれた半導体層3とから構成されている
。このへき開面4a,4bに露出する半導体層3からは
レーザ光が出射される。本方法はこのへき開面4a,4
bに薄膜を形成する方法であり、この薄膜によって各へ
き開面4a,4bは酸化等による劣化から保護され、長
期の信頼性が確保される。また、へき開面の反射率の低
減および増加の設定を行うことが出来る。
FIG. 2 is a perspective view showing a semiconductor laser chip bar 1 coated by the method according to this embodiment. The chip bar 1 has opposing electrodes 2a,
2b and a semiconductor layer 3 sandwiched therebetween. Laser light is emitted from the semiconductor layer 3 exposed at the cleavage planes 4a and 4b. This method uses these cleavage planes 4a, 4
This is a method of forming a thin film on the cleavage surface 4a, 4b, and this thin film protects each cleavage surface 4a, 4b from deterioration due to oxidation or the like, thereby ensuring long-term reliability. Further, it is possible to set the reflectance of the cleavage plane to be reduced or increased.

【0010】図3はチップバー固定治具5を示す平面図
である。固定治具5は、中空の支持枠6と、この支持枠
6の内壁面にバネ7a,7bによって押し付けられてい
るスライド板8とから構成されている。また、支持枠6
の図示の上下部には突起部6a,6bが設けられている
FIG. 3 is a plan view showing the chip bar fixing jig 5. As shown in FIG. The fixing jig 5 includes a hollow support frame 6 and a slide plate 8 pressed against the inner wall surface of the support frame 6 by springs 7a and 7b. In addition, the support frame 6
Projections 6a and 6b are provided at the upper and lower parts of the illustration.

【0011】図4はチップ・バー1が固定治具5に保持
された状態を示す平面図である。すなわち、固定治具5
のスライド板8をバネ7a,7bに抗して移動させ、こ
の移動によって出来た空間に半導体レーザ・チップ・バ
ー1を挟み込んだ状態である。この際、チップ・バー1
は、各へき開面4a,4bが露出するように、一方の電
極2b形成面がスライド板8に当接され、他方の電極2
a形成面が支持枠6の内壁面に押し付けられるように保
持されている。
FIG. 4 is a plan view showing the state in which the chip bar 1 is held by the fixture 5. As shown in FIG. That is, the fixing jig 5
The slide plate 8 is moved against the springs 7a and 7b, and the semiconductor laser chip bar 1 is sandwiched in the space created by this movement. At this time, chip bar 1
In this case, one electrode 2b forming surface is brought into contact with the slide plate 8, and the other electrode 2
The a-forming surface is held so as to be pressed against the inner wall surface of the support frame 6.

【0012】図5はチップ・バー1が保持された複数の
固定治具5を回転ホルダー10に取り付けた状態を示す
平面図である。すなわち、固定治具5の突起部6a,6
bが回転ホルダー10の内壁面に形成された溝に嵌合さ
れ、各固定治具5は回転ホルダー10に固定されている
。この回転ホルダー10の図示の上部には連結部11が
形成されている。なお、同図では3個の固定治具5を回
転ホルダー10に取り付けた場合が描かれているが、取
り付け数は所望数とすることが出来る。
FIG. 5 is a plan view showing a state in which a plurality of fixing jigs 5 holding chip bars 1 are attached to a rotary holder 10. That is, the protrusions 6a, 6 of the fixing jig 5
b is fitted into a groove formed on the inner wall surface of the rotary holder 10, and each fixing jig 5 is fixed to the rotary holder 10. A connecting portion 11 is formed at the top of the rotary holder 10 as shown in the drawing. Although the figure shows a case where three fixing jigs 5 are attached to the rotary holder 10, the number of fixing jigs 5 attached can be any desired number.

【0013】図1は回転ホルダー10が回転装置にセッ
トされた状態を示す斜視図である。すなわち、回転ホル
ダー10の連結部11はモータ12の回転軸に機械的に
接続されており、モータ12の回転によって回転ホルダ
ー10は図示の矢印のように回転する。
FIG. 1 is a perspective view showing the rotating holder 10 set in a rotating device. That is, the connecting portion 11 of the rotary holder 10 is mechanically connected to the rotating shaft of the motor 12, and the rotation of the motor 12 causes the rotary holder 10 to rotate as shown by the arrow in the figure.

【0014】このような構成において、コーティング装
置内を真空状態に設定し、回転ホルダー10を回転させ
ながら、コーティング・ガスを図示の方向から照射する
。回転ホルダー10の回転により、チップ・バー1の各
へき開面4a,4bには交互にコーティング・ガスが照
射される。このため、対向する各へき開面4a,4bに
同時に単層または多層の保護薄膜が形成される。
In this configuration, the interior of the coating apparatus is set to a vacuum state, and the coating gas is irradiated from the direction shown in the figure while rotating the rotary holder 10. By rotating the rotary holder 10, each cleavage surface 4a, 4b of the chip bar 1 is alternately irradiated with coating gas. Therefore, a single layer or multilayer protective thin film is simultaneously formed on each of the opposing cleavage surfaces 4a and 4b.

【0015】このように本実施例によるコーティング方
法によれば、従来のように、コーティング処理途中にお
いて他方のへき開面を露出させるためにチップ・バーを
外して再配置する必要がなくなる。しかも、コーティン
グ装置内の状態を大気圧に戻して再度真空状態に設定し
なおしたりする必要もなくなる。従って、従来のように
困難な作業を伴うことなく、簡略なプロセスでかつ短時
間で半導体レーザ・チップを製造することが可能になる
As described above, according to the coating method according to the present embodiment, there is no need to remove and rearrange the chip bar in order to expose the other cleavage plane during the coating process, unlike the conventional method. Furthermore, there is no need to return the state inside the coating apparatus to atmospheric pressure and set it to a vacuum state again. Therefore, it becomes possible to manufacture a semiconductor laser chip by a simple process and in a short time without involving difficult work as in the conventional method.

【0016】また、従来の方法では、チップ・バーを静
止した状態でコーティング・ガスを照射していたため、
へき開面に形成される保護膜の均一性は良くなかった。 しかし、本実施例によれば、上述のようにチップ・バー
1を回転させながらコーティング処理を行うため、各へ
き開面4a,4bにおける保護膜の均一牲が向上する。 また、従来の方法においては、微少なチップ・バーをホ
ルダの溝にぴったりと嵌め込むため、チップ・バーの着
脱作業が困難であり、着脱時にへき開面を傷付ける可能
性が高かった。特に、従来の方法では各へき開面のコー
ティング処理最中にもチップ・バーを着脱する必要があ
るため、チップ・バーを傷める確率が高く、製造歩留ま
りが低くなっていた。これに対して、本実施例における
チップ・バー1の着脱は、各固定治具5のスライド板8
を僅かに移動するだけで行える。すなわち、チップ・バ
ー1が微少であっても容易に着脱することが可能であり
、しかも、コーティング処理の最中にチップ・バー1の
着脱の必要がない。このため、本実施例による方法によ
ればチップ・バー1に損傷を与える危険性が減少し、製
造歩留まりは向上する。
[0016] Furthermore, in the conventional method, the coating gas was irradiated with the chip bar stationary;
The uniformity of the protective film formed on the cleavage plane was not good. However, according to this embodiment, since the coating process is performed while rotating the chip bar 1 as described above, the uniformity of the protective film on each cleavage surface 4a, 4b is improved. Furthermore, in the conventional method, since the minute chip bar is tightly fitted into the groove of the holder, it is difficult to attach and detach the tip bar, and there is a high possibility that the cleavage surface will be damaged during attachment and detachment. In particular, in the conventional method, it is necessary to attach and detach the chip bar even during the coating process on each cleavage surface, which increases the probability of damaging the chip bar and lowers the manufacturing yield. On the other hand, the attachment and detachment of the chip bar 1 in this embodiment is carried out by the sliding plate 8 of each fixing jig 5.
This can be done by simply moving the That is, even if the chip bar 1 is minute, it can be easily attached and detached, and there is no need to attach and detach the tip bar 1 during the coating process. Therefore, according to the method according to this embodiment, the risk of damaging the chip bar 1 is reduced, and the manufacturing yield is improved.

【0017】[0017]

【発明の効果】以上説明したように本発明によれば、デ
バイスを回転させてへき開面にコーティング・ガスを照
射するため、対向する各へき開面に同時にコーティング
が施される。また、デバイスを弾性体により支持枠に押
し付けて保持するため、デバイスの着脱が容易に行える
As described above, according to the present invention, since the device is rotated to irradiate the coating gas onto the cleavage planes, each of the opposing cleavage planes is coated simultaneously. Furthermore, since the device is held against the support frame by the elastic body, the device can be easily attached and detached.

【0018】このため、簡略なプロセスでかつ短時間に
半導体レーザ型デバイスのへき開面にコーティング処理
を行えるようになる。しかも、デバイスの製造歩留まり
は向上する。
[0018] Therefore, the coating process can be performed on the cleavage plane of the semiconductor laser type device using a simple process and in a short time. Moreover, the manufacturing yield of devices is improved.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例による半導体レーザ型デバイ
スのへき開面コーティング方法を示す斜視図である。
FIG. 1 is a perspective view showing a method for coating a cleavage surface of a semiconductor laser type device according to an embodiment of the present invention.

【図2】本実施例においてへき開面のコーティング対象
になる半導体レーザ・チップ・バーを示す斜視図である
FIG. 2 is a perspective view showing a semiconductor laser chip bar whose cleavage plane is to be coated in this embodiment.

【図3】半導体レーザ・チップ・バーを保持する固定治
具を示す平面図である。
FIG. 3 is a plan view showing a fixture that holds a semiconductor laser chip bar.

【図4】固定治具に半導体レーザ・チップ・バーが保持
された状態を示す平面図である。
FIG. 4 is a plan view showing a semiconductor laser chip bar held by a fixture.

【図5】複数の固定治具がセットされた回転ホルダーを
示す平面図である。
FIG. 5 is a plan view showing a rotary holder in which a plurality of fixing jigs are set.

【符号の説明】[Explanation of symbols]

1…半導体レーザ・チップ・バー 2a,2b…電極 3…半導体層 4a,4b…へき開面 5…固定治具 6…支持枠 6a,6b…突起部 7a,7b…バネ 8…スライド板 10…回転ホルダ 11…連結部 12…モータ 1...Semiconductor laser chip bar 2a, 2b...electrodes 3...Semiconductor layer 4a, 4b...cleavage plane 5...Fixing jig 6...Support frame 6a, 6b...Protrusions 7a, 7b...Spring 8...Slide plate 10...Rotating holder 11...Connection part 12...Motor

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  半導体レーザ型デバイスをへき開面を
露出させて保持し、前記デバイスを回転させながら前記
へき開面にコーティング・ガスを照射し、前記へき開面
に保護膜を形成することを特徴とする半導体レーザ型デ
バイスのへき開面コーティング方法。
1. A semiconductor laser type device is held with the cleavage plane exposed, and the cleavage plane is irradiated with a coating gas while the device is rotated to form a protective film on the cleavage plane. Cleavage surface coating method for semiconductor laser type devices.
【請求項2】  半導体レーザ型デバイスは、弾性体に
より一方の電極面が押圧されて他方の電極面が支持枠の
内壁面に押し付けられて保持されていることを特徴とす
る請求項1記載の半導体レーザ型デバイスのへき開面コ
ーティング方法。
2. The semiconductor laser type device according to claim 1, wherein one electrode surface is pressed by an elastic body and the other electrode surface is pressed and held against the inner wall surface of the support frame. Cleavage surface coating method for semiconductor laser type devices.
JP6006791A 1991-03-25 1991-03-25 Method for coating cleavage plane of semiconductor laser type device Pending JPH04294589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6006791A JPH04294589A (en) 1991-03-25 1991-03-25 Method for coating cleavage plane of semiconductor laser type device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6006791A JPH04294589A (en) 1991-03-25 1991-03-25 Method for coating cleavage plane of semiconductor laser type device

Publications (1)

Publication Number Publication Date
JPH04294589A true JPH04294589A (en) 1992-10-19

Family

ID=13131375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6006791A Pending JPH04294589A (en) 1991-03-25 1991-03-25 Method for coating cleavage plane of semiconductor laser type device

Country Status (1)

Country Link
JP (1) JPH04294589A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1003940C2 (en) * 1995-09-08 1998-03-04 Sharp Kk Method and device for manufacturing a semiconductor laser device.
EP0771628A3 (en) * 1995-10-30 1998-04-22 AT&T Corp. A fixture and method for laser fabrication by in-situ cleaving of semiconductor bars
CN103990617A (en) * 2014-05-30 2014-08-20 苏州倍辰莱电子科技有限公司 PCB clamping and blowing jig
CN106025790A (en) * 2016-06-30 2016-10-12 西安立芯光电科技有限公司 Assembling structure and assembling method for facet film-plating clamp of semiconductor laser
CN112687594A (en) * 2021-03-11 2021-04-20 度亘激光技术(苏州)有限公司 Semiconductor device cleavage device and cleavage method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1003940C2 (en) * 1995-09-08 1998-03-04 Sharp Kk Method and device for manufacturing a semiconductor laser device.
EP0771628A3 (en) * 1995-10-30 1998-04-22 AT&T Corp. A fixture and method for laser fabrication by in-situ cleaving of semiconductor bars
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