JPH0429343A - Semiconductor device method of forming mark for identifying - Google Patents

Semiconductor device method of forming mark for identifying

Info

Publication number
JPH0429343A
JPH0429343A JP13495890A JP13495890A JPH0429343A JP H0429343 A JPH0429343 A JP H0429343A JP 13495890 A JP13495890 A JP 13495890A JP 13495890 A JP13495890 A JP 13495890A JP H0429343 A JPH0429343 A JP H0429343A
Authority
JP
Japan
Prior art keywords
semiconductor
light
polyimide film
semiconductor substrate
identifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13495890A
Other languages
Japanese (ja)
Inventor
Hitoshi Shirata
白田 仁志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP13495890A priority Critical patent/JPH0429343A/en
Publication of JPH0429343A publication Critical patent/JPH0429343A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To shorten the working hours without being affected by the number of chips by applying light to the film, which covers the top face being selected from among the group consisting of circuit components such as an active element, a receiving element, a resistor built in a semiconductor substrate, so as to discolor it to judge whether the properties are good or bad. CONSTITUTION:A polyimide film 7 is applied uniformly on a semiconductor substrate 2. An incandescent lamp, which discolors the polyimide film 7, is arranged in an optical system 8 and light is applied to the spot (Spot) smaller than the semiconductor chip 4, whose alignment is finished, so as to discolor the polyimide film 7 to form a mark 6 for identifying a semiconductor element, and by repeating this method, a plurality of discolored marks 6 for identifying semiconductor devices are formed. Accordingly, besides being capable of forming the sizes constant, the variation in dimensions by positions can be suppressed. Thus, working hours can be shortened.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明はダイソータ(Dlsorter)試験の結果を
示す半導体素子用判別マークを半導体チップに形成する
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a method for forming a semiconductor element identification mark indicating the result of a die sorter test on a semiconductor chip.

(従来の技術) 半導体ウェーハ(Wafer以後基板と記載する)に形
成するスクライブライン(Scrlbe Llne )
により区分けされたところには所定の不純物を導入・拡
散して能動素子、受動素子または抵抗などの回路成分か
らなる群から選定する一種または複数種を設けてから、
スクライブラインに沿って機械的手段により分割(Br
aking ) して半導体チップ(Chlp)を形成
する。この半導体チップの特性はいわゆるダイソータ試
験により良品と不良品に選別し′て後の工程に移行する
のが一般的な手法である。この選別を終えた各チップに
はイン力(Innker)により直径llll11〜3
m+1程度の半導体素子用判別マークとしてインク(I
nk)付けを行って目視によっても結果が確認できるよ
うにしている。なおほぼ中央に半導体素子用判別マーク
を形成した複数個のチップを第1図に示した。この第1
図に明らかなようにオリフラ(Olientation
Flat)部1を形成した例えばシリコンから成る半導
体基板2には網目状のスクライブライン3が形成されて
おり、これにより区分けされたチップ4・・・の中心付
近に半導体素子用判別マーク5・・・が形成されている
(Prior art) Scribe line formed on a semiconductor wafer (hereinafter referred to as substrate)
A predetermined impurity is introduced and diffused into the areas divided by the above, and one or more types selected from the group consisting of circuit components such as active elements, passive elements, or resistors are provided.
Divide by mechanical means along the scribe line (Br
aking) to form a semiconductor chip (Chlp). The general method for determining the characteristics of these semiconductor chips is to use a so-called die sorter test to classify them into good and defective products before proceeding to a subsequent process. After this sorting, each chip is given a diameter of 11 to 3 by Innker.
Ink (I
nk) so that the results can be confirmed visually. FIG. 1 shows a plurality of chips in which a semiconductor element identification mark is formed approximately in the center. This first
As shown in the figure, the orientation
A mesh-like scribe line 3 is formed on a semiconductor substrate 2 made of silicon, for example, on which a flat portion 1 is formed, and semiconductor element identification marks 5 are formed near the center of chips 4 divided by this.・is formed.

この半導体素子用判別マーク5・・・を付けた半導体チ
ップ4はマウンター(Mountcr )に付設したロ
ボット(Robot )機構によりリードフレーム(L
ead Frame)にマウント(Mount )され
、また、前述のように分割工程によりチップ毎に分断さ
れているのは当然である。
The semiconductor chip 4 with the semiconductor element identification mark 5... is mounted on a lead frame (L) by a robot mechanism attached to a mounter (Mountcr).
It goes without saying that the semiconductor chip is mounted on an ead frame, and is also divided into chips by the dividing process as described above.

マウント工程ではI T V (Industrial
 Te1evislon)に写しだした半導体チップ4
の半導体素子用判別マーク5を付属機器例えばマイコン
により良品か否かを判別しその結果をふまえてロボット
機構が稼動する。ところでダイソータ試験による良品不
良品の判別結果はフロッピーディスク(Floppy 
Disk)または例えば伝送線などのオンラインシステ
ム(On Line 5yste11)によりインカー
に送られる他に、半導体素子用判別マーク5をどの半導
体チップに付けるかなどのデータ(Data)も作製さ
れて同じようにインカーに送付・保存される。なおマウ
ンターに供給された半導体チップ4は白熱電球による照
明で照らしている。
In the mounting process, ITV (Industrial
Semiconductor chip 4 shown on Te1evislon)
An attached device such as a microcomputer determines whether or not the semiconductor element discrimination mark 5 is a good product or not, and the robot mechanism operates based on the result. By the way, the results of the die sorter test for determining good products and defective products are stored on a floppy disk (Floppy disk).
In addition to being sent to the inker via an online system (On Line 5yste11) such as a transmission line (Disk) or a transmission line, data such as which semiconductor chip to attach the semiconductor element identification mark 5 to is also created and sent to the inker in the same way. It will be sent and saved to. Note that the semiconductor chip 4 supplied to the mounter is illuminated by an incandescent light bulb.

(発明が解決しようとする課題) マウント工程に先立って半導体チップに施されるインク
付は工程は一種類のインク例えば赤または黒を用いてお
り更に、形も一種類に限定されているので、当然良/不
良の判別しか行なえなかった。しかし、半導体チップに
造込まれた素子例えばI C(Integrated 
C3rcu4t)やLSI(Large 5cale 
Integrated C1rcu4t)にあっては特
性に応じたランク(Rank)分けも必要になっている
が応えることができない。しかも、大量の半導体チップ
を処理するには、異なった種類のイン力を使用せざるを
得ないので直径が違う半導体素子用判別マークを付けた
半導体チップも流れることになる。これに伴ってマウン
ターの動作機構を切替えなければならずインデックス(
Index )の低下をもたらす。
(Problem to be Solved by the Invention) The process of applying ink to the semiconductor chip prior to the mounting process uses one type of ink, such as red or black, and is also limited to one type of shape. Naturally, only good/bad judgment could be made. However, elements built into semiconductor chips, such as IC (Integrated
C3rcu4t) and LSI (Large 5cale
Integrated C1rcu4t) requires rank classification according to characteristics, but this cannot be met. Furthermore, in order to process a large number of semiconductor chips, different types of input forces must be used, so semiconductor chips with identification marks for semiconductor elements of different diameters are also disposed of. Along with this, the operating mechanism of the mounter had to be changed, and the index (
index).

また、照明設備により照らされた比較的小直径の半導体
素子用判別マークにゴミなどが付着し更に、照らされる
位置によってはマウンターが誤検出したり、検出不能の
状態が発生することもある。
In addition, dust and the like may adhere to the comparatively small-diameter identification marks for semiconductor devices illuminated by the lighting equipment, and furthermore, depending on the illuminated position, the mounter may make false detections or may be unable to detect them.

しかも、インクの乾燥時間も要るので工期が長くなるな
どの問題があった。本発明はこのような事情により成さ
れたもので、特に、チップ数に影響されずに作業時間を
短縮することを目的とする。
Moreover, since the ink requires time to dry, there are problems such as a long construction period. The present invention was made under these circumstances, and particularly aims to shorten the working time without being affected by the number of chips.

[発明の構成コ (課題を解決するための手段) 半導体基板に造込んだ能動素子、受動素子または抵抗な
どの回路成分からなる群から選定する一種または複数種
の頂面を被覆する膜に光を当てて変色させることにより
特性の良不良を判別する点に本発明に係わる半導体素子
用判別マークの形成方法の特徴がある。
[Configuration of the Invention (Means for Solving the Problem) A film covering the top surface of one or more types selected from the group consisting of circuit components such as active elements, passive elements, or resistors built into a semiconductor substrate is exposed to light. The method for forming a discrimination mark for a semiconductor device according to the present invention is characterized in that it is possible to determine whether the characteristics are good or bad by applying a wafer and changing color.

(作 用) 半導体素子用判別マークには光が当ると変色する膜とし
て例えばポリミド(Polyiaid)樹脂が好適であ
り、この形成に不可欠な光源にはタングステンフィラメ
ント(Tungsten Filament)により作
った白色電球を利用する。また光により変色する膜の形
成位置を複数箇所にするのには光が透過する材料と不透
過の材料から成るマスクを利用し、更に光により変色す
る種類を増して複数種の半導体素子用判別マークを形成
するのにはポリイミド樹脂に顔料を添加する手法を採っ
た。
(Function) Polyamide resin, for example, is suitable as a film that changes color when exposed to light for the identification mark for semiconductor devices, and a white light bulb made from a tungsten filament is used as the light source essential for forming this mark. Make use of it. In addition, in order to form a film that changes color when exposed to light in multiple locations, a mask made of a material that transmits light and a material that does not transmit light is used, and the number of types that change color due to light is increased to allow identification of multiple types of semiconductor devices. To form the marks, we adopted a method of adding pigment to polyimide resin.

(実施例) 本発明に係わる実施例を第2図乃至第7図を参照して説
明するが従来技術欄に示した部品と同一のものには同じ
番号を付けて説明する。先ず第2図には本発明方法によ
り半導体素子用判別マクロ・・・を形成した半導体基板
2を示した。この半導体基板2には従来通りオリフラ部
1が形成されかつ、縦横にスクライブライン3を設けて
区分けされかつ内部に所定の不純物層を導入・拡散して
能動素子、受動素子または抵抗などの回路成分から成る
群から選定した一種または複数種を形成した複数個のチ
ップ4が本発明方法の適用対象である。このような半導
体基板2には第3図に明らかなように全面に遠心分離方
式により光で変色する感光膜例えばポリイミド膜7を厚
さ25μm〜50μmに均一に塗布して、半導体チップ
4も当然全面が覆われる。
(Example) An example according to the present invention will be described with reference to FIGS. 2 to 7, and parts that are the same as those shown in the prior art column will be described with the same numbers. First, FIG. 2 shows a semiconductor substrate 2 on which a semiconductor element discriminating macro is formed by the method of the present invention. This semiconductor substrate 2 has an orientation flat part 1 formed thereon as before, and is partitioned by providing scribe lines 3 vertically and horizontally, and a predetermined impurity layer is introduced and diffused inside to form circuit components such as active elements, passive elements, or resistors. The method of the present invention is applied to a plurality of chips 4 formed with one or more types selected from the group consisting of: As shown in FIG. 3, such a semiconductor substrate 2 is coated with a photoresist film, for example, a polyimide film 7, which changes color when exposed to light, uniformly to a thickness of 25 μm to 50 μm using a centrifugal separation method, and the semiconductor chip 4 is also coated with it. The entire surface is covered.

図に示す光学系8にはポリイミド膜7を変色する白熱電
球(図示せず)を配置しており、位置合せを終えた半導
体チップ4より小さいスポット(Spot)を照射して
ポリイミド膜7を変色して半導体素子用判別マーク6を
形成し、この手法を繰返すことにより変色した複数の半
導体素子用判別マーク6が形成できる。しかも大きさを
一定に形成できるほかに位置による寸法のバラツキも抑
制できる。
The optical system 8 shown in the figure is equipped with an incandescent light bulb (not shown) that discolors the polyimide film 7, and illuminates a spot smaller than the aligned semiconductor chip 4 to discolor the polyimide film 7. By repeating this process, a plurality of discolored discrimination marks 6 for semiconductor elements can be formed. Moreover, not only can the size be made constant, but also variations in dimensions depending on position can be suppressed.

前記実施例における半導体素子用判別マーク6の色や形
が一種類であるために、良/不良の判別しか行なえない
が、前述のように半導体素子の種類によっては動作特性
に応じたランク分けが必要になるので、本発明ではこの
要求に応えるために光線の波長により異なった変色が得
られる膜を利用する。即ち、ポリイミド膜に変色させる
顔料を添加し、例えば赤色とするのには酸化チタンを加
えてタングステンフィラメントを赤熱させる白色電球か
ら放射する光により照射する。この結果第5図に示すよ
うに異なった色または形の半導体素子用判別マーク6・
・・が第5図に示すように形成できる。その製法として
は能動素子、受動素子または抵抗などの回路成分から成
る群から選定した一種または複数種を形成した半導体チ
・ツブ4の選択的な表面に所定の顔料を加えたポリイミ
ド膜を例えばポツティング(POtting )法によ
り塗布してから前記白色電球光を照射して所定の色に変
色した半導体素子用判別マーク6・・・を形成する。
Since the semiconductor element discrimination mark 6 in the above embodiment has one type of color and shape, it is only possible to determine whether the semiconductor element is good or bad. In order to meet this requirement, the present invention utilizes a film that can change color differently depending on the wavelength of light. That is, a pigment that changes color is added to the polyimide film, for example, titanium oxide is added to make it red, and the film is irradiated with light emitted from a white light bulb that makes the tungsten filament red-hot. As a result, as shown in FIG.
... can be formed as shown in FIG. The manufacturing method involves, for example, potting a polyimide film containing a predetermined pigment on a selective surface of a semiconductor chip 4 on which one or more types selected from the group consisting of circuit components such as active elements, passive elements, and resistors are formed. After coating by the (POtting) method, the above-mentioned white bulb light is irradiated to form a discriminating mark 6 for a semiconductor element which changes color to a predetermined color.

更にまた、第6図及び第7図に示した実施例を説明する
。この例は液晶を利用したマスクにより半導体チップ4
・・・を形成した半導体基板2全面に複数の半導体素子
用判別マーク6・・・を−遍に形成する方法である。第
6図はこの方法を実施する装置の要部を断面図により示
したもので、ステージ(Stage ) 9に載置する
被処理半導体基板2即ち能動素子、受動素子または抵抗
などの回路成分から成る群から選定した一種または複数
種が形成された複数個のチップ4の頂面にはタングステ
ンフィラメントを赤熱させる白色電球から放射する光を
照射することにより変色するポリイミド膜7を塗布する
。この時、半導体チップ4に設置しであるパッド(Pa
d)部即ち所定の不純物を半導体基板の選択的な位置に
導入・拡散して形成する不純物領域に電気的に接続しか
つ他の部品との電気的な接続用に半導体基板2に形成し
た導電性金属から成る層を被覆しないように注意する。
Furthermore, the embodiment shown in FIGS. 6 and 7 will be explained. In this example, a semiconductor chip 4 is
This is a method of uniformly forming a plurality of semiconductor element discrimination marks 6 on the entire surface of a semiconductor substrate 2 on which... are formed. FIG. 6 is a sectional view showing the main part of the apparatus for carrying out this method, in which a semiconductor substrate 2 to be processed is placed on a stage 9, which consists of circuit components such as active elements, passive elements, and resistors. A polyimide film 7 that changes color when irradiated with light emitted from a white light bulb that makes a tungsten filament red-hot is applied to the top surface of a plurality of chips 4 on which one or more types selected from the group are formed. At this time, a pad (Pa
d) part, that is, a conductive region formed on the semiconductor substrate 2 for electrical connection to an impurity region formed by introducing and diffusing a predetermined impurity into a selective position of the semiconductor substrate and for electrical connection with other parts. Care must be taken not to coat layers consisting of sensitive metals.

ポリイミド膜7を塗布するに当たってはダイツタ試験に
より判別された良の半導体チップ4には光を照射せず不
良の半導体チップ4に光が当たるようなマスク10を利
用するが、これは通常時光に対して透明で信号が印加す
ると黒色に変化して光に対して不透明になる部分が形成
できる材料として液晶(図示せず)を利用する。図では
透明部を11不透明部を12と表示した。更にマスク1
0に対向して光源8を設置してポリイミド膜7の変色用
光を放射する。一方ダイソータ試験により得られたデー
タをフロッピーディスクやオンラインシステムを介して
データ変換部13に送って電気的な信号を形成するがマ
スク10と電気的に接続する。
When applying the polyimide film 7, a mask 10 is used that does not irradiate light on the good semiconductor chips 4 determined by the Daitsuta test, but allows light to shine on the defective semiconductor chips 4. Liquid crystal (not shown) is used as a material that can form a transparent part that changes to black when a signal is applied and becomes opaque to light. In the figure, the transparent part is shown as 11 and the opaque part is shown as 12. More mask 1
A light source 8 is installed opposite to the polyimide film 7 and emits light for changing the color of the polyimide film 7. On the other hand, the data obtained by the die sorter test is sent to the data converter 13 via a floppy disk or an online system to form an electrical signal, which is electrically connected to the mask 10.

第7図には、マスク10により半導体チップ4に複数の
半導体素子用判別マーク6・・・を形成した状態を斜視
図により示した。ステージ9は半導体基板2がX−Y方
向に移動できるようにステッピングモータ(Stepp
ing Motor) 14を取付けておりマスク10
に形成した透明部11と不透明部12に対応して各半導
体チップ4に複数の半導体素子用判別マーク6・・・が
−度に形成される。
FIG. 7 is a perspective view showing a state in which a plurality of semiconductor element discrimination marks 6 are formed on the semiconductor chip 4 using the mask 10. The stage 9 is equipped with a stepping motor (Stepp motor) so that the semiconductor substrate 2 can be moved in the X-Y direction.
ing Motor) 14 is attached and the mask 10 is attached.
A plurality of semiconductor element discrimination marks 6 . . . are formed on each semiconductor chip 4 at a time corresponding to the transparent portion 11 and the opaque portion 12 formed in the semiconductor chip 4 .

なお、ステージ9に被処理半導体基板2を載置するに当
たっては位置決め工程が必要になるが、本発明に直接関
係がないので詳細な説明を割愛する。この工程を経てか
らこの被処理半導体基板2に関するデータを取入れデー
タ変換部13により変えられた信号をマスク10に配置
した液晶に印加して所定のパターン(Pattern 
)を形成してから前述の光放射工程に移行してマーキン
グ(Marklng )工程が完了する。
Note that a positioning step is required to place the semiconductor substrate 2 to be processed on the stage 9, but since it is not directly related to the present invention, a detailed explanation will be omitted. After this step, the data regarding the semiconductor substrate 2 to be processed is input, and a signal changed by the data converter 13 is applied to the liquid crystal placed on the mask 10 to create a predetermined pattern.
) is formed, and then the above-mentioned light emitting process is performed to complete the marking process.

[発明の効果] 本発明では半導体素子用判別マークの形成位置によるバ
ラツキをなくしひいては大きさを一定にでき、加えて乾
燥時間も縮めることができる。
[Effects of the Invention] According to the present invention, it is possible to eliminate variations in the formation position of the discrimination mark for semiconductor elements, thereby making it possible to make the size constant, and in addition, it is possible to shorten the drying time.

しかも、複数色や違った形のものも形成できるので、半
導体素子の特性のランク分けの表示も可能になる。更に
また、半導体基板単位での処理ができるようになったの
で従来の半導体チップ単位での処理に比べ生産性が大幅
に向上できる。
Furthermore, since it is possible to form a plurality of colors and different shapes, it is also possible to display the ranks of the characteristics of semiconductor elements. Furthermore, since processing can now be performed on a semiconductor substrate basis, productivity can be greatly improved compared to conventional processing on a semiconductor chip basis.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体基板に半導体素子用判別マークを
形成した状態を示す上面図、第2図は本発明方法を施し
た半導体基板の上面図、第3図及び第4図は本発明方法
を施すのに利用する装置の概要を示す断面図と斜視図、
第5図は本発明方法により異なった形や色の半導体素子
用判別マークを形成した半導体基板の上面図、第6図及
び第7図はマスクを利用する本発明方法の要部を示す断
面図と斜視図である。 1・・・オリフラ部、   2・・・半導体基板、3・
・・スクライプライン、 4・・・半導体チップ、 5.6・・・半導体素子用判別マーク、7・・・ポリイ
ミド膜、  8・・・光源、9・・・ステージ、10・
・・マスク、11・・・透明部、     12・・・
不透明部、13・・・データ変換部、 14・・・ステッピングモータ。
FIG. 1 is a top view showing a state in which a semiconductor element identification mark is formed on a conventional semiconductor substrate, FIG. 2 is a top view of a semiconductor substrate subjected to the method of the present invention, and FIGS. 3 and 4 are diagrams showing the method of the present invention. A cross-sectional view and a perspective view showing an overview of the equipment used to perform the
FIG. 5 is a top view of a semiconductor substrate on which identification marks for semiconductor elements of different shapes and colors are formed by the method of the present invention, and FIGS. 6 and 7 are cross-sectional views showing essential parts of the method of the present invention using a mask. and a perspective view. DESCRIPTION OF SYMBOLS 1... Orientation flat part, 2... Semiconductor substrate, 3.
... Scripline, 4... Semiconductor chip, 5.6... Semiconductor element identification mark, 7... Polyimide film, 8... Light source, 9... Stage, 10...
...Mask, 11...Transparent part, 12...
Opaque part, 13... Data conversion part, 14... Stepping motor.

Claims (1)

【特許請求の範囲】[Claims]  半導体基板に造込んだ能動素子、受動素子または抵抗
などの回路成分からなる群から選定する一種または複数
種の頂面を被覆する膜に光を当てて変色させることによ
り特性の良不良を判別することを特徴とする半導体素子
用判別マークの形成方法。
A film covering the top surface of one or more types selected from a group consisting of circuit components such as active elements, passive elements, or resistors built into a semiconductor substrate is exposed to light and changes color to determine whether the characteristics are good or bad. A method for forming an identification mark for a semiconductor device, characterized in that:
JP13495890A 1990-05-24 1990-05-24 Semiconductor device method of forming mark for identifying Pending JPH0429343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13495890A JPH0429343A (en) 1990-05-24 1990-05-24 Semiconductor device method of forming mark for identifying

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13495890A JPH0429343A (en) 1990-05-24 1990-05-24 Semiconductor device method of forming mark for identifying

Publications (1)

Publication Number Publication Date
JPH0429343A true JPH0429343A (en) 1992-01-31

Family

ID=15140556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13495890A Pending JPH0429343A (en) 1990-05-24 1990-05-24 Semiconductor device method of forming mark for identifying

Country Status (1)

Country Link
JP (1) JPH0429343A (en)

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