JPH0429221B2 - - Google Patents

Info

Publication number
JPH0429221B2
JPH0429221B2 JP56151395A JP15139581A JPH0429221B2 JP H0429221 B2 JPH0429221 B2 JP H0429221B2 JP 56151395 A JP56151395 A JP 56151395A JP 15139581 A JP15139581 A JP 15139581A JP H0429221 B2 JPH0429221 B2 JP H0429221B2
Authority
JP
Japan
Prior art keywords
anode
etched
etching
gas
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56151395A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5853833A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15139581A priority Critical patent/JPS5853833A/ja
Publication of JPS5853833A publication Critical patent/JPS5853833A/ja
Publication of JPH0429221B2 publication Critical patent/JPH0429221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP15139581A 1981-09-26 1981-09-26 プラズマエツチング装置 Granted JPS5853833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15139581A JPS5853833A (ja) 1981-09-26 1981-09-26 プラズマエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15139581A JPS5853833A (ja) 1981-09-26 1981-09-26 プラズマエツチング装置

Publications (2)

Publication Number Publication Date
JPS5853833A JPS5853833A (ja) 1983-03-30
JPH0429221B2 true JPH0429221B2 (enrdf_load_stackoverflow) 1992-05-18

Family

ID=15517641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15139581A Granted JPS5853833A (ja) 1981-09-26 1981-09-26 プラズマエツチング装置

Country Status (1)

Country Link
JP (1) JPS5853833A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140723A (ja) * 1983-12-28 1985-07-25 Oki Electric Ind Co Ltd ドライエッチング方法
JPS60186411A (ja) * 1984-03-06 1985-09-21 Anelva Corp ドライエツチング方法
JPS61171135A (ja) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp プラズマエッチング装置の制御方法
JPS63277751A (ja) * 1987-05-11 1988-11-15 Rikagaku Kenkyusho 低ガス放出壁面を有する真空容器
JP2619395B2 (ja) * 1987-07-10 1997-06-11 株式会社日立製作所 プラズマ処理方法
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
JP3553688B2 (ja) * 1995-05-10 2004-08-11 アネルバ株式会社 プラズマ処理装置及びプラズマ処理方法
US5656334A (en) * 1995-10-05 1997-08-12 Anelva Corporation Plasma treating method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056431B2 (ja) * 1980-10-09 1985-12-10 三菱電機株式会社 プラズマエツチング装置

Also Published As

Publication number Publication date
JPS5853833A (ja) 1983-03-30

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