JPH04290427A - Hexode type reactive ion etching apparatus - Google Patents

Abstract

PURPOSE:To make the etching rate of wafers between respective hexode faces uniform in a hexode type reactive ion etching apparatus. CONSTITUTION:Etching gas is made to flow equally to respective hexode faces 3 by equiangularly arranging a plurality of gas exhaust openings 6 from the center of the bottom of a chamber 1.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reactive ion etching apparatus for semiconductor manufacturing equipment, and more particularly to a hexode type reactive ion etching apparatus.

0002

2. Description of the Related Art A conventional hexode type reactive ion etching apparatus, as shown in FIGS. 3(a) and 3(b), is installed in a chamber 1 and in the center of the chamber 1. Hexode type electrode 2 to set
and a gas introduction pipe 4 installed around the hexode type electrode 2.
One gas exhaust port 6 was provided at the bottom of the chamber 1 at a position offset from the center.

0003

[Problems to be Solved by the Invention] This conventional reactive ion etching apparatus has only one gas exhaust port at the bottom corner of the chamber, so the flow of etching gas is uneven, and the hexode directly above the gas exhaust port There was a problem in that there was a difference in etching rate between the wafer on the side of the hexode and the wafer on the hexode side opposite the gas exhaust port.

An object of the present invention is to provide a hexode-type reactive ion etching apparatus in which the flow of etching gas to each hexode surface is made uniform.

[0005]

[Means for Solving the Problems] In order to achieve the above object, a hexode type reactive ion etching apparatus according to the present invention has a chamber, a hexode type electrode, and a gas exhaust port, and has a hexode type electrode. This is a hexode-type reactive ion etching system that arranges multiple wafers on a hexode surface and performs etching on multiple wafers simultaneously.The chamber has a hexode-type electrode installed in the center; The electrode holds a plurality of wafers set on its hexode surface, and the gas exhaust port is formed at the bottom of the chamber in correspondence with the hexode surface of the hexode type electrode.

[0006] Furthermore, in the present invention, a chamber;
A hexode-type reactive ion etching apparatus that has a hexode-type electrode and a gas exhaust port, arranges a plurality of wafers on the hexode surface of the hexode-type electrode, and etches the plurality of wafers at the same time. A hexode-type electrode is installed in the center, and the hexode-type electrode holds multiple wafers set on the hexode surface.The gas exhaust port is opened at the center of the bottom of the chamber directly below the hexode-type electrode. It was formed.

[0007]

[Operation] In the hexode type reactive ion etching apparatus of the present invention, the gas exhaust port is arranged at the bottom of the chamber so that the etching gas flows uniformly to each hexode surface.

[0008]

[Embodiments] Hereinafter, embodiments of the present invention will be explained with reference to the drawings.

(Embodiment 1) FIG. 1(a) is a longitudinal sectional view showing Embodiment 1 of the present invention, and FIG. 1(b) is a horizontal sectional view.

In the figure, in the center of the chamber 1,
A hexagonal hexode-shaped electrode 2 is installed vertically, a gas introduction tube 4 is installed vertically around the hexode-shaped electrode 2, and the gas introduction tube 4 is placed on the wafer 5 set on the hexode surface 3 of the electrode 2. Introduce etching gas.

Further, a total of six gas exhaust ports 6, one for each hexode surface 3 of the hexode type electrode 2, are arranged. By providing one gas exhaust port 6 for each hexode surface 3, the flow of etching gas on all hexode surfaces can be made equal, and the wafer etching speed can be made uniform between each hexode surface. It has this effect.

(Embodiment 2) FIG. 2(a) is a longitudinal cross-sectional view showing a second embodiment of the present invention, and FIG. 2(b) is a cross-sectional view thereof. In this example, the gas exhaust port 6 is provided at the center of the bottom of the chamber 1 directly below the hexode-type electrode 2, and is different from the example 1 described above.
The same effect can be obtained.

[0013]

Effects of the Invention As explained above, in the present invention, the gas exhaust ports are arranged so that the etching gas flows uniformly to each hexode surface, so that the etching speed of the wafer can be made uniform between each hexode surface. It has the effect of being able to.

[Brief explanation of the drawing]

FIG. 1 (a) is a longitudinal cross-sectional view showing Example 1 of the present invention;
(b) is a cross-sectional view of the same.

FIG. 2(a) is a vertical cross-sectional view showing Example 2 of the present invention;
(b) is a cross-sectional view of the same.

FIG. 3(a) is a vertical cross-sectional view showing a conventional example, and FIG. 3(b) is a cross-sectional view thereof.

[Explanation of symbols]

1 Chamber 2 Hexode type electrode 3 Hexode surface 4 Gas introduction pipe 5 Wafer 6 Gas exhaust port

Claims (2)

[Claims] [Claim 1] A chamber, a hexode-type electrode,
A hexode-type reactive ion etching apparatus is a hexode-type reactive ion etching apparatus that has a gas exhaust port, arranges a plurality of wafers on the hexode surface of a hexode-type electrode, and etches the plurality of wafers at the same time. A hexode-type electrode is installed, and the hexode-type electrode holds multiple wafers set on the hexode surface, and the gas exhaust port is formed at the bottom of the chamber to correspond to the hexode surface of the hexode-type electrode. A hexode type reactive ion etching device characterized by: [Claim 2] A chamber, a hexode-type electrode,
A hexode-type reactive ion etching apparatus is a hexode-type reactive ion etching apparatus that has a gas exhaust port, arranges a plurality of wafers on the hexode surface of a hexode-type electrode, and etches the plurality of wafers at the same time. A hexode-type electrode is installed, and the hexode-type electrode holds multiple wafers set on the hexode surface, and the gas exhaust port is formed in the center of the bottom of the chamber directly below the hexode-type electrode. A hexode type reactive ion etching device characterized by: