JPH0653147A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To freely adjust film formation rate and etching rate in a sheet-type semiconductor manufacturing device. CONSTITUTION:A reaction gas introduction plate 11 is formed by laminating first and second plates 12, 13 having a plurality of reaction gas blow-off ports, respectively. The second plate 13 is relatively rotated to the first plate 12; thereby, overlapping of reaction gas blow-off ports is changed and an actual opening area of the reaction gas introduction plate 11 is arbitrarily adjusted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer type semiconductor manufacturing apparatus by film formation or etching.

[0002]

2. Description of the Related Art FIG. 9 is a sectional view showing an example of a conventional semiconductor manufacturing apparatus of this type. In the figure, a wafer 3 is placed on a wafer stage 4 so as to face a reaction gas introduction plate 2 provided in an upper portion of a reaction chamber 1. In addition, FIG.
As shown in FIG. 3, a plurality of reaction gas outlets 7 are formed in the reaction gas introduction plate 2. The reaction gas introducing plate 5 is connected to a reaction gas introducing unit 5 for introducing the reaction gas into the reaction chamber 1. The reaction chamber 1 is provided with an exhaust port 6 for exhausting the reaction gas.

Next, the operation will be described. In the reaction chamber 1, with the wafer 3 placed on the wafer stage 4, the reaction gas introduced from the reaction gas introduction unit 5 passes through the reaction gas outlet 7 of the reaction gas introduction plate 2 and the surface of the wafer 3. And the film is formed. Further, the reaction gas after the reaction is exhausted from the exhaust port 6 to the outside of the reaction chamber 1.

[0004]

Since the conventional single-wafer type semiconductor manufacturing apparatus is configured as described above, the inside of the reaction gas outlet 7 of the reaction gas introducing plate 2 is increased as the number of film formation increases. Also, the reaction products are accumulated and the opening area of the reaction gas outlet 7 changes. Therefore, there is a problem that the amount of the reaction gas reaching the surface of the wafer 3 changes and the film forming rate changes.

The present invention has been made to solve the above problems, and the opening area of the reaction gas introducing plate can be arbitrarily adjusted, and the film forming rate and the etching rate can be freely set. It is an object of the present invention to obtain a semiconductor manufacturing apparatus that can be adjusted to.

[0006]

A semiconductor manufacturing apparatus according to the present invention uses a reaction gas introduction plate formed by stacking a plurality of plates each having a plurality of reaction gas outlets, and the plates are rotated relative to each other. By doing so, the overlap of the reaction gas outlets is changed.

[0007]

According to the present invention, the opening area of the reaction gas introduction plate is changed by relatively shifting the plurality of reaction gas introduction plates to change the overlap of the reaction gas outlets, and the amount of the reaction gas blown out. Adjust.

[0008]

Embodiments of the present invention will be described below with reference to the drawings. Example 1. 1 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a bottom view of the reaction gas introducing plate of FIG. 1, and the same or corresponding parts to those of FIGS. 9 and 10 are designated by the same reference numerals. , The description is omitted.

In the figure, the reaction gas introducing plate 11 is shown.
Is the first plate 12 connected to the reaction gas introduction part 5.
And the second plate 1 superposed on the first plate 12 so as to be rotatable around the center of the first plate 12.
It consists of 3. As in the conventional example, each of the plates 12 and 13 is provided with a plurality of reaction gas outlets 12a and 13a, respectively. That is, the reaction gas introduction plate 11 of this embodiment is the same as the reaction gas introduction plate 2 of the conventional example.
It is almost the same as a stack of two.

With the above configuration, the reaction gas introduced from the reaction gas introduction unit 5 with the wafer 3 placed on the wafer stage 4 is supplied to the first and second plates 12, 1.
The reaction gas outlets 12a and 13a of No. 3 reach the surface of the wafer 3 through the opening of the overlapping portion, and the film is formed thereby. Further, the reaction gas after the reaction is exhausted from the exhaust port 6 to the outside of the reaction chamber 1.

Here, the substantial opening area of the reaction gas introduction plate 11 is the area of the overlapping portion of the reaction gas outlet 12a and the reaction gas outlet 13a. Therefore, the first
And the relative positional relationship between the second plates 12 and 13 is changed to adjust the overlap of the reaction gas outlets 12a and 13a, thereby adjusting the amount of the reaction gas passing through the reaction gas introduction plate 11. It is also possible to freely adjust the film forming rate.

In the first embodiment, an example in which the two plates 12 and 13 having the same size reaction gas outlets 12a and 13a are provided at the same positions is shown, but the same or different sizes are provided at different positions. It is also possible to stack three or more plates provided with the reaction gas outlets of the shell.

Example 2. 3 is a sectional view of a semiconductor manufacturing apparatus according to another embodiment of the present invention, and FIG. 4 is a bottom view of the reaction gas introducing plate of FIG. The reaction gas introducing plate 14 of the second embodiment is the same as the first plate 1 of the first embodiment.
The third plate 15 and the fourth plate 16 are superposed on the second plate 2 so that they can be rotated independently of each other.

As shown in FIG. 5, the third plate 15 has a reaction gas outlet 12 at the center of the first plate 12.
The reaction gas outlet 15a is arranged so as to overlap with a. Further, as shown in FIG. 6, the fourth plate 16 has a reaction gas outlet 12 in the outer peripheral portion of the first plate 12.
The reaction gas outlet 16a is arranged so as to overlap with a.

When such a reaction gas introducing plate 14 is used, by rotating the third plate 15 with respect to the first plate 12, the opening area of the central portion is increased.
By rotating the fourth plate 16, the opening area of the outer peripheral portion can be adjusted independently. For example, FIG. 7 shows a state in which only the opening area of the outer peripheral portion is changed (increased) from the state of FIG. 4, and FIG. 8 changes only the opening area of the central portion from the state of FIG. 4 ( (Enlarged) state. Thus, by adjusting the blowing amount of the reaction gas separately depending on the position, the uniformity of the reaction gas in the wafer surface is improved.

The shape, material, opening shape, number of openings and the like of each reaction gas introducing plate are arbitrary.

[0017]

As described above, the semiconductor manufacturing apparatus of the present invention uses, as the reaction gas introduction plate, a stack of a plurality of plates each having a plurality of reaction gas outlets, and the plates are mutually connected. By changing the relative rotation, the overlap of the reaction gas outlets can be changed, so that the opening area of the reaction gas introduction plate can be adjusted arbitrarily, which allows the film formation rate and etching rate to be adjusted freely. There is an effect that can be done.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

2 is a bottom view of the reaction gas introduction plate of FIG. 1. FIG.

FIG. 3 is a sectional view of a semiconductor manufacturing apparatus according to another embodiment of the present invention.

FIG. 4 is a bottom view of the reaction gas introduction plate of FIG.

5 is a bottom view showing the third plate of FIG. 3. FIG.

6 is a bottom view showing the fourth plate of FIG. 3. FIG.

FIG. 7 is a bottom view when only the third plate is displaced from the state of FIG.

FIG. 8 is a bottom view when only the fourth plate is displaced from the state of FIG.

FIG. 9 is a sectional view of an example of a conventional semiconductor manufacturing apparatus.

FIG. 10 is a bottom view of the reaction gas introduction plate of FIG.

[Explanation of symbols]

 DESCRIPTION OF REFERENCE NUMERALS 1 reaction chamber 3 wafer 5 reaction gas introduction part 11 reaction gas introduction plate 12 first plate 12a reaction gas outlet 13 second plate 13a reaction gas outlet 14 reaction gas introduction plate 15 third plate 15a reaction gas outlet 16 Fourth plate 16a Reactant gas outlet

Claims (1)

[Claims] 1. A reaction chamber for accommodating a wafer, a reaction gas introducing section for introducing a reaction gas into the reaction chamber, a reaction gas introduced from the reaction gas introducing section connected to the reaction gas introducing section, In a single-wafer type semiconductor manufacturing apparatus having a reaction gas introduction plate blown into the reaction chamber,
The reaction gas introduction plate is a stack of a plurality of plates each having a plurality of reaction gas outlets,
A semiconductor manufacturing apparatus, wherein the overlapping of the reaction gas outlets is changed by rotating the plates relative to each other.