JPH04289174A - シリコン表面へのタングステンの選択的析出方法 - Google Patents
シリコン表面へのタングステンの選択的析出方法Info
- Publication number
- JPH04289174A JPH04289174A JP3348247A JP34824791A JPH04289174A JP H04289174 A JPH04289174 A JP H04289174A JP 3348247 A JP3348247 A JP 3348247A JP 34824791 A JP34824791 A JP 34824791A JP H04289174 A JPH04289174 A JP H04289174A
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- silicon surface
- particle
- wfx
- rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims description 32
- 229910052721 tungsten Inorganic materials 0.000 title claims description 32
- 239000010937 tungsten Substances 0.000 title claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 24
- 229910052710 silicon Inorganic materials 0.000 title claims description 24
- 239000010703 silicon Substances 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 23
- 230000008021 deposition Effects 0.000 title claims description 13
- 238000000151 deposition Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000001556 precipitation Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 230000006911 nucleation Effects 0.000 claims description 6
- 238000010899 nucleation Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 2
- 238000013467 fragmentation Methods 0.000 claims description 2
- 238000006062 fragmentation reaction Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 101000582320 Homo sapiens Neurogenic differentiation factor 6 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 102100030589 Neurogenic differentiation factor 6 Human genes 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4038990A DE4038990C1 (enExample) | 1990-12-06 | 1990-12-06 | |
| DE4038990.1 | 1990-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04289174A true JPH04289174A (ja) | 1992-10-14 |
Family
ID=6419761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3348247A Pending JPH04289174A (ja) | 1990-12-06 | 1991-12-04 | シリコン表面へのタングステンの選択的析出方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5387438A (enExample) |
| EP (1) | EP0489337B1 (enExample) |
| JP (1) | JPH04289174A (enExample) |
| DE (2) | DE4038990C1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3744554B2 (ja) * | 1994-09-09 | 2006-02-15 | キヤノンアネルバ株式会社 | 薄膜形成方法 |
| US5753303A (en) * | 1996-04-30 | 1998-05-19 | International Business Machines Corporation | Process for the elimination of tungsten oxidation with inert gas stabilization in chemical vapor deposition processes |
| US6120846A (en) * | 1997-12-23 | 2000-09-19 | Advanced Technology Materials, Inc. | Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4794019A (en) * | 1980-09-04 | 1988-12-27 | Applied Materials, Inc. | Refractory metal deposition process |
| US4503601A (en) * | 1983-04-18 | 1985-03-12 | Ncr Corporation | Oxide trench structure for polysilicon gates and interconnects |
| DE3340560A1 (de) * | 1983-11-09 | 1985-05-15 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen |
| JPS6177324A (ja) * | 1984-09-21 | 1986-04-19 | Toshiba Corp | 金属薄膜の形成方法 |
| US4595608A (en) * | 1984-11-09 | 1986-06-17 | Harris Corporation | Method for selective deposition of tungsten on silicon |
| US4617087A (en) * | 1985-09-27 | 1986-10-14 | International Business Machines Corporation | Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits |
| US5037775A (en) * | 1988-11-30 | 1991-08-06 | Mcnc | Method for selectively depositing single elemental semiconductor material on substrates |
-
1990
- 1990-12-06 DE DE4038990A patent/DE4038990C1/de not_active Expired - Fee Related
-
1991
- 1991-11-26 DE DE59102008T patent/DE59102008D1/de not_active Expired - Fee Related
- 1991-11-26 EP EP91120163A patent/EP0489337B1/de not_active Expired - Lifetime
- 1991-12-04 JP JP3348247A patent/JPH04289174A/ja active Pending
-
1993
- 1993-06-03 US US08/073,622 patent/US5387438A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0489337A1 (de) | 1992-06-10 |
| EP0489337B1 (de) | 1994-06-22 |
| DE4038990C1 (enExample) | 1992-04-09 |
| DE59102008D1 (de) | 1994-07-28 |
| US5387438A (en) | 1995-02-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20030710 |