JPH04285085A - Ceramic substrate with thick film - Google Patents
Ceramic substrate with thick filmInfo
- Publication number
- JPH04285085A JPH04285085A JP5119791A JP5119791A JPH04285085A JP H04285085 A JPH04285085 A JP H04285085A JP 5119791 A JP5119791 A JP 5119791A JP 5119791 A JP5119791 A JP 5119791A JP H04285085 A JPH04285085 A JP H04285085A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- metallizing
- ceramic substrate
- metallized layer
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 239000000919 ceramic Substances 0.000 title claims abstract description 26
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 13
- 150000004767 nitrides Chemical class 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 238000010304 firing Methods 0.000 abstract description 4
- 229910052758 niobium Inorganic materials 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 239000011812 mixed powder Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 229910017944 Ag—Cu Inorganic materials 0.000 description 6
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 3
- 239000011225 non-oxide ceramic Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- -1 Mo and W Chemical class 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Abstract
Description
【０００１】［発明の目的］[Object of the invention]
【０００２】0002
【産業上の利用分野】本発明は、電気特性や接合強度に
優れた厚膜メタライズ層を有するセラミックス基板に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate having a thick metallized layer with excellent electrical properties and bonding strength.
【０００３】0003
【従来の技術】セラミックス材料は、一般に、軽量でか
つ高硬度を有する、耐熱性や耐食性に優れる、電気絶縁
性に優れる等という特徴を有しており、電子部品用材料
や構造用材料等として利用されている。特に、窒化アル
ミニウムに代表される窒化物系セラミックス材料は、熱
伝導率が酸化物系セラミックス材料に比べて ４倍〜１
０倍と高く、放熱性に優れ、高電気絶縁性、低誘電率を
示し、さらにシリコンチップに近似した低熱膨張率を示
す等、優れた特性を有することから、電子部品特に高出
力、高電力型の半導体素子の搭載基板用材料として期待
されており、実用化が進められている。[Prior Art] Ceramic materials generally have characteristics such as being lightweight and having high hardness, excellent heat resistance and corrosion resistance, and excellent electrical insulation properties, and are used as materials for electronic components, structural materials, etc. It's being used. In particular, nitride-based ceramic materials such as aluminum nitride have a thermal conductivity that is 4 to 1 times higher than that of oxide-based ceramic materials.
0 times, excellent heat dissipation, high electrical insulation, low dielectric constant, and low coefficient of thermal expansion similar to that of silicon chips. It is expected to be used as a material for mounting substrates for type semiconductor devices, and its practical use is progressing.
【０００４】ところで、セラミックス材料を電子部品の
搭載基板等として利用する場合、回路や電子部品の搭載
部等の形成を目的として、その表面に金属化層（メタラ
イズ層）を形成することが不可欠とされている。例えば
、窒化物系セラミックス基板等の表面に導電層を形成す
る際には、従来、ＭｏやＷ 等の高融点金属を用いたメ
タライズ法、蒸着やスパッタリングによる薄膜メタライ
ズ法、ＣｕやＡｇ等を主として含むペーストを用いた厚
膜メタライズ法等が用いられてきた。これらの中で、厚
膜メタライズ法によれば、メタライズペーストの塗布、
焼成のみによって、ある程度の厚さを持たせた導電層を
形成することができ、導電路の断面積を大きく設定でき
ることから、比較的大きな電流を流す際に好適な導電層
が得られる。By the way, when a ceramic material is used as a mounting board for electronic components, it is essential to form a metallized layer on its surface for the purpose of forming circuits and mounting parts for electronic components. has been done. For example, when forming a conductive layer on the surface of a nitride-based ceramic substrate, etc., conventionally, metallization methods using high melting point metals such as Mo and W, thin film metallization methods using vapor deposition or sputtering, and Cu, Ag, etc. are mainly used. A thick film metallization method using a paste containing such materials has been used. Among these, according to the thick film metallization method, coating of metallization paste,
By only firing, a conductive layer having a certain thickness can be formed, and the cross-sectional area of the conductive path can be set large, so that a conductive layer suitable for passing a relatively large current can be obtained.
【０００５】このような厚膜メタライズ法によって、窒
化物系等のセラミックス基板上に回路を形成する方法と
しては、（１） Ａｇ／Ｐｄ や Ａｇ／Ｐｔ等を含む
Ａｇ系メタライズ用ペーストを用いる方法、（２） Ｃ
ｕに ＺｎＯ−Ｂ２ Ｏ ３ −ＳｉＯ３ 系等のガラ
スを添加したＣｕ系メタライズ用ペーストを用いる方法
等が多用されてきた。[0005] Methods for forming a circuit on a nitride-based ceramic substrate using such a thick film metallization method include (1) a method using an Ag-based metallization paste containing Ag/Pd, Ag/Pt, etc.; , (2) C
A method using a Cu-based metallizing paste in which a glass such as ZnO-B2O3-SiO3 is added to u has been frequently used.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上述し
た （１）のＡｇ系メタライズ用ペーストによる方法は
、窒化物系等の非酸化物系セラミックス基板に対して十
分な接合強度を得ることができないと共に、耐はんだ性
に難があるという問題を有していた。また、 （２）の
Ｃｕ系メタライズ用ペーストによる方法では、はんだ濡
れ性に難点があると共に、接合強度を確保するためにガ
ラス系の添加剤を使用していることから、導体抵抗の低
抵抗化に限界があり、ある程度の電流しか流すことがで
きないという問題があった。[Problems to be Solved by the Invention] However, the above-mentioned method (1) using Ag-based metallizing paste cannot obtain sufficient bonding strength for non-oxide ceramic substrates such as nitride-based ceramics. , which had the problem of poor solder resistance. In addition, the method (2) using a Cu-based metallizing paste has problems with solder wettability and uses glass-based additives to ensure bonding strength, so it is possible to reduce the conductor resistance. There was a problem that there was a limit and only a certain amount of current could flow.
【０００７】このようなことから、耐はんだ性やはんだ
濡れ性等を向上させることはもちろんのこと、電気抵抗
が低く、かつ十分な厚さを有する厚膜メタライズ層をセ
ラミックス基板、特に窒化アルミニウム等の非酸化物系
セラミックス基板に対しても高接合強度で形成すること
を可能にすることが強く望まれている。For these reasons, in addition to improving solder resistance and solder wettability, it is desirable to use a thick film metallized layer with low electrical resistance and sufficient thickness on ceramic substrates, especially aluminum nitride, etc. It is strongly desired to be able to form a bond with high bonding strength even on non-oxide ceramic substrates.
【０００８】本発明は、このような課題に対処するべく
なされたもので、高接合強度を有すると共に、耐はんだ
性やはんだ濡れ性に優れ、電気抵抗が小さく、比較的大
電流を流すことが可能な厚膜セラミックス基板を提供す
ることを目的としている。The present invention has been made to address these problems, and has high bonding strength, excellent solder resistance and solder wettability, low electrical resistance, and the ability to flow a relatively large current. The purpose is to provide a thick film ceramic substrate that is possible.
【０００９】［発明の構成］[Configuration of the invention]
【００１０】0010
【課題を解決するための手段】本発明の厚膜セラミック
ス基板は、セラミックス基板と、このセラミックス基板
表面に形成された導電性を有する厚膜メタライズ層とを
有する厚膜セラミックス基板において、前記厚膜メタラ
イズ層は、Ｃｕを６０〜８０重量％、Ｔｉ、Ｚｒおよび
Ｎｂから選ばれた少なくとも １種を １〜１０重量％
含有し、残部が実質的にＡｇからなるメタライズ用組成
物により形成されてなること特徴としている。[Means for Solving the Problems] The thick film ceramic substrate of the present invention includes a ceramic substrate and a conductive thick film metallized layer formed on the surface of the ceramic substrate. The metallized layer contains 60 to 80% by weight of Cu and 1 to 10% by weight of at least one selected from Ti, Zr, and Nb.
The metallizing composition is characterized in that it is formed of a metallizing composition containing Ag and the remainder substantially consisting of Ag.
【００１１】本発明の厚膜セラミックス基板に用いるメ
タライズ用組成物は、ＡｇとＣｕとの共晶組成（７２ｗ
ｔ％ Ａｇ−２８ｗｔ％Ｃｕ）から、Ｃｕを６０〜８０
重量％とＣｕリッチ側に組成をずらした Ａｇ−Ｃｕろ
う材に、適量の活性金属すなわちＴｉ、ＺｒおよびＮｂ
から選ばれた少なくとも １種の金属を添加したもので
ある。このように、Ｃｕリッチの Ａｇ−Ｃｕろう材を
主として用いた理由は、以下のとおりである。The metallizing composition used for the thick film ceramic substrate of the present invention has a eutectic composition of Ag and Cu (72 w
t%Ag-28wt%Cu), Cu from 60 to 80
Appropriate amounts of active metals, namely Ti, Zr, and Nb, are added to the Ag-Cu brazing filler metal whose weight percentage and composition are shifted to the Cu-rich side.
At least one metal selected from the following is added. The reason why the Cu-rich Ag-Cu brazing material was mainly used is as follows.
【００１２】すなわち、組成物中に配合されたＡｇ量に
見合った量のＣｕは、Ａｇと共に共晶液相を形成してメ
タライズ層の接合に寄与するが、残りのＣｕはそのまま
Ｃｕ相としてメタライズ層内に存在する。このように、
Ｃｕリッチ組成の Ａｇ−Ｃｕろう材を用いることによ
って、加熱接合時の液相成分を制御することができる。
よって、メタライズ層自体の主体はＣｕ相となり、接合
強度と導電性の双方を満足させることが可能となる。換
言すれば、低抵抗化およびメタライズ層の厚さの維持が
でき、比較的大電流を流すことが可能となる。ただし、
Ｃｕが８０重量％を超えると、共晶液相の形成量が少な
くなり過ぎるため、接合強度の低下を招く。また、Ｃｕ
量が６０重量％未満では、 Ａｇ−Ｃｕの共晶液相の形
成量が増大して、接合強度は増大するものの、メタライ
ズ層の厚さの維持が困難となる。Ｃｕのより好ましい配
合量は、６３〜７４重量％の範囲である。That is, an amount of Cu corresponding to the amount of Ag blended into the composition forms a eutectic liquid phase with Ag and contributes to bonding of the metallized layer, but the remaining Cu is directly metallized as a Cu phase. Exists within the layer. in this way,
By using an Ag-Cu brazing filler metal with a Cu-rich composition, the liquid phase component during heat bonding can be controlled. Therefore, the main component of the metallized layer itself is the Cu phase, making it possible to satisfy both bonding strength and conductivity. In other words, it is possible to lower the resistance and maintain the thickness of the metallized layer, and it is possible to flow a relatively large current. however,
If Cu exceeds 80% by weight, the amount of eutectic liquid phase formed becomes too small, resulting in a decrease in bonding strength. Also, Cu
If the amount is less than 60% by weight, the amount of Ag-Cu eutectic liquid phase formed increases, and although the bonding strength increases, it becomes difficult to maintain the thickness of the metallized layer. A more preferable amount of Cu is in the range of 63 to 74% by weight.
【００１３】また、Ｔｉ、ＺｒおよびＮｂから選ばれた
少なくとも １種の活性金属は、熱処理温度（接合温度
）で活性化し、セラミックス材料と反応して例えば窒化
物となり、接合強度の向上に寄与するものである。この
ような活性金属の配合比が １重量％未満では、十分な
接合強度が得られず、また１０重量％を超えて用いても
それ以上の効果が得られないと共に、反応形成される窒
化物等が脆性材料であるため、接合強度の低下要因とな
る恐れがある。[0013] Furthermore, at least one active metal selected from Ti, Zr, and Nb is activated at the heat treatment temperature (bonding temperature) and reacts with the ceramic material to form, for example, a nitride, which contributes to improving the bonding strength. It is something. If the blending ratio of such active metals is less than 1% by weight, sufficient bonding strength cannot be obtained, and even if it exceeds 10% by weight, no further effect can be obtained, and the nitrides formed by the reaction will not be obtained. Since these materials are brittle materials, they may cause a decrease in bonding strength.
【００１４】本発明に用いられるセラミックス基板材料
としては、特に限定されるものではなく、酸化アルミニ
ウム、酸化ジルコニウム等の酸化物系焼結体から、窒化
アルミニウム、窒化ケイ素、炭化ケイ素、サイアロン等
の非酸化物系焼結体まで、各種のセラミックス材料を適
用することができる。ただし、本質的に表面活性に乏し
い窒化アルミニウム等の非酸化物系セラミックス基板に
対して特に効果的である。The ceramic substrate material used in the present invention is not particularly limited, and includes oxide-based sintered bodies such as aluminum oxide and zirconium oxide, as well as non-sintered bodies such as aluminum nitride, silicon nitride, silicon carbide, and sialon. Various ceramic materials can be applied, including oxide-based sintered bodies. However, it is particularly effective for non-oxide ceramic substrates such as aluminum nitride, which inherently have poor surface activity.
【００１５】本発明の厚膜セラミックス基板は、例えば
以下のようにして製造される。The thick film ceramic substrate of the present invention is manufactured, for example, as follows.
【００１６】まず、上記した組成を満足するメタライズ
用組成物粉末、例えばＡｇ粉、Ｃｕ粉および活性金属粉
の混合粉末、 Ａｇ−Ｃｕ合金と活性金属との混合粉末
、あるいは予めＡｇ、Ｃｕおよび活性金属の ３元系合
金としたものの粉末を用意する。これに樹脂結合剤およ
び必要に応じて分散媒を添加し、均一に分散させて所望
の粘度のメタライズ用ペーストを作製する。First, a metallizing composition powder satisfying the above composition, such as a mixed powder of Ag powder, Cu powder and active metal powder, a mixed powder of Ag-Cu alloy and active metal, or a powder containing Ag, Cu and active metal in advance, is used. Prepare a powder of a ternary alloy of metals. A resin binder and, if necessary, a dispersion medium are added to this and uniformly dispersed to produce a metallizing paste having a desired viscosity.
【００１７】次に、上記メタライズ用ペーストをセラミ
ックス基板上に、例えばスクリ―ン印刷法によって所要
のパタ―ン形状に塗布し、乾燥した後に窒素ガス雰囲気
のような不活性雰囲気中や真空中にて加熱、焼成して、
厚膜メタライズ層を形成する。焼成温度は、 ８００℃
〜 ９００℃程度とすることが好ましい。また、厚膜メ
タライズ層の厚さとしては、１５μｍ 〜４０μｍ 程
度が好ましい。Next, the metallizing paste described above is applied onto a ceramic substrate in a desired pattern by, for example, a screen printing method, and after drying, it is applied in an inert atmosphere such as a nitrogen gas atmosphere or in a vacuum. heat and bake,
Form a thick metallized layer. Firing temperature is 800℃
The temperature is preferably about 900°C. Further, the thickness of the thick metallized layer is preferably about 15 μm to 40 μm.
【００１８】[0018]
【作用】本発明の厚膜セラミックス基板においては、
Ａｇ−Ｃｕ共晶組成よりＣｕリッチ側に組成をずらすと
共に、活性金属を配合したメタライズ用組成物を用いて
いる。これにより、接合に寄与する共晶液相の形成分を
除く残部のＣｕは、そのままＣｕ相として厚膜メタライ
ズ層内に存在し、厚さの維持と導電性の向上に寄与する
。接合強度は、活性金属の働きにより十分な値が得られ
る。また、厚膜メタライズ層の主体はＣｕであるため、
耐はんだ性やはんだ濡れ性に優れた厚膜メタライズ層が
得られる。[Function] In the thick film ceramic substrate of the present invention,
A metallizing composition is used in which the composition is shifted to the Cu-rich side from the Ag-Cu eutectic composition and an active metal is blended. As a result, the remaining Cu, excluding the component forming the eutectic liquid phase that contributes to bonding, remains in the thick film metallized layer as a Cu phase, contributing to maintaining the thickness and improving conductivity. A sufficient bonding strength can be obtained due to the action of the active metal. In addition, since the thick film metallized layer is mainly composed of Cu,
A thick metallized layer with excellent solder resistance and solder wettability can be obtained.
【００１９】[0019]
【実施例】次に、本発明の実施例について説明する。[Example] Next, an example of the present invention will be described.
【００２０】実施例１
まず、セラミックス基板として、厚さ０．８ｍｍｔの窒
化アルミニウム基板（Ｙ２ Ｏ ３ ３重量％含有）を
用意した。一方、メタライズ用組成物として、重量比で
Ａｇ：Ｃｕ：Ｔｉ＝２７．４：７０．６：２．０の混合
粉末を用意し、この混合粉末 １００重量部に、カルボ
キシル基重合したアクリル樹脂を１０重量部、テレピネ
オールを２０部、オレイン酸を０．１ｃｃ加え、十分に
混合してメタライズ用ペーストを作製した。Example 1 First, an aluminum nitride substrate (containing 3% by weight of Y2O3) having a thickness of 0.8 mm was prepared as a ceramic substrate. On the other hand, as a metallizing composition, a mixed powder with a weight ratio of Ag:Cu:Ti=27.4:70.6:2.0 was prepared, and 100 parts by weight of this mixed powder was added with an acrylic resin polymerized with carboxyl groups. 10 parts by weight, 20 parts of terpineol, and 0.1 cc of oleic acid were added and thoroughly mixed to prepare a metallizing paste.
【００２１】次に、上記窒化アルミニウム基板の表面に
、メタライズ用ペ―ストを乾燥後の塗膜厚が約３０μｍ
となるようにスクリーン印刷し、乾燥させた。この後
、メタライズ用ペ―ストを塗布した窒化アルミニウム基
板を、１×１０−４Ｔｏｒｒ以下の真空中にて、 ６０
０℃×３０分＋ ８５０℃×１０分（昇温速度：１０℃
／分、降温：炉冷）の温度プロファイルで焼成し、厚膜
メタライズ層を形成して目的とする厚膜セラミックス基
板を得た。Next, a metallizing paste was applied to the surface of the aluminum nitride substrate to a coating thickness of approximately 30 μm after drying.
Screen printed and dried. After that, the aluminum nitride substrate coated with the metallizing paste was heated for 60 minutes in a vacuum of 1 x 10-4 Torr or less.
0℃ x 30 minutes + 850℃ x 10 minutes (heating rate: 10℃
A thick film metallized layer was formed by firing with a temperature profile of 1/min, temperature drop: furnace cooling) to obtain the desired thick film ceramic substrate.
【００２２】実施例２
メタライズ用組成物として、重量比でＡｇ：Ｃｕ：Ｔｉ
＝２４．８：７３．２：２．０の混合粉末を用意し、こ
の混合粉末を用いる以外は実施例１と同一条件でメタラ
イズ用ペーストを作製した。そして、このメタライズ用
ペーストを用いて、実施例１と同一条件で、窒化アルミ
ニウム基板上に厚膜メタライズ層を形成した。Example 2 As a metallizing composition, the weight ratio of Ag:Cu:Ti was
A mixed powder of =24.8:73.2:2.0 was prepared, and a metallizing paste was produced under the same conditions as in Example 1 except that this mixed powder was used. Then, a thick film metallized layer was formed on an aluminum nitride substrate using this metallizing paste under the same conditions as in Example 1.
【００２３】比較例１
メタライズ用組成物として、重量比でＡｇ：Ｃｕ：Ｔｉ
＝７０．６：２７．４：２．０の混合粉末を用意し、こ
の混合粉末を用いる以外は実施例１と同一条件でメタラ
イズ用ペーストを作製した。そして、このメタライズ用
ペーストを用いて、実施例１と同一条件で、窒化アルミ
ニウム基板上に厚膜メタライズ層を形成した。Comparative Example 1 As a metallizing composition, a weight ratio of Ag:Cu:Ti was used.
A mixed powder of =70.6:27.4:2.0 was prepared, and a metallizing paste was produced under the same conditions as in Example 1 except that this mixed powder was used. Then, a thick film metallized layer was formed on an aluminum nitride substrate using this metallizing paste under the same conditions as in Example 1.
【００２４】比較例２
メタライズ用組成物として、重量比で Ａｇ：Ｐｄ＝８
５：１５の混合粉末を用いて、メタライズ用ペーストを
作製し、 ８５０℃×１０分間の条件で焼成し、窒化ア
ルミニウム基板上に厚膜メタライズ層を形成した。Comparative Example 2 As a metallizing composition, the weight ratio of Ag:Pd=8
A metallizing paste was prepared using a 5:15 mixed powder and fired at 850° C. for 10 minutes to form a thick metallizing layer on an aluminum nitride substrate.
【００２５】以上のようにして、実施例および比較例で
作製した各厚膜セラミックス基板を用いて、それぞれの
メタライズ層の厚さを測定すると共に、各特性を以下の
ようにして測定し評価した。Using each of the thick-film ceramic substrates produced in the Examples and Comparative Examples as described above, the thickness of each metallized layer was measured, and each characteristic was measured and evaluated as follows. .
【００２６】（ａ） 接着強度 ： ＡｌＮ基
板上に ２ｍｍ角のパターンを形成し、垂直引張り強度
を測定。(a) Adhesive strength: A 2 mm square pattern was formed on an AlN substrate, and the vertical tensile strength was measured.
【００２７】（ｂ） 導体抵抗 ：表面抵抗測
定器・Ｌｏｒｅｓｔａ ＡＰ（三菱油化社製）を用いた
４探針法により測定。(b) Conductor resistance: Measured by the four-probe method using a surface resistance measuring device, Loresta AP (manufactured by Mitsubishi Yuka Co., Ltd.).
【００２８】（ｃ） はんだ付け性： ２Ａｇ／６２
Ｓｎ／３６Ｐｄはんだを用いて、 ２３０℃×１０秒デ
ィップ後観察。(c) Solderability: 2Ag/62
Observation after dipping at 230°C for 10 seconds using Sn/36Pd solder.
【００２９】以上の測定結果を表１に示す。The above measurement results are shown in Table 1.
【００３０】
表１
実施例１ 実施
例２ 比較例１ 比較例２ 膜厚（μｍ
） ３０
３２ ２０ ８
．９ 接着強度（ ｋｇｆ／２ｍｍ□）
１３．５ １２．１
１５．０ ６．８ 導体抵抗（
ｍΩ／□） ２．２ ２
．１ ３．３ ４．１
はんだ付け性 極めて良好
極めて良好 良好 良好
表１の結果からも明らかなように、本発明によるメタラ
イズ用組成物を用いた厚膜セラミックス基板では、十分
な厚さと低抵抗を有すると共に、優れた接合強度を示す
厚膜メタライズ層が得られており、またはんだ特性に優
れるものであることが分かる。これに対して、 Ａｇ−
Ｃｕ共晶組成を用いた比較例１では、膜厚が小さく、や
や導体抵抗が高くなっており、また従来のメタライズ用
ペーストを用いた比較例２では、膜厚、接着強度が小さ
く、導体抵抗も大きかった。[0030]
Table 1
Example 1 Example 2 Comparative example 1 Comparative example 2 Film thickness (μm
) 30
32 20 8
．． 9 Adhesive strength (kgf/2mm□)
13.5 12.1
15.0 6.8 Conductor resistance (
mΩ/□) 2.2 2
．． 1 3.3 4.1
Solderability Very good Very good Good Good
As is clear from the results in Table 1, the thick film ceramic substrate using the metallizing composition according to the present invention can provide a thick film metallized layer that has sufficient thickness and low resistance and exhibits excellent bonding strength. It can be seen that the soldering properties are excellent. On the other hand, Ag-
In Comparative Example 1 using a Cu eutectic composition, the film thickness was small and the conductor resistance was slightly high, and in Comparative Example 2 using a conventional metallizing paste, the film thickness and adhesive strength were small and the conductor resistance was low. It was also big.
【００３１】[0031]
【発明の効果】以上説明したように本発明によれば、高
接合強度を有すると共に、耐はんだ性やはんだ濡れ性に
優れ、さらには電気抵抗が小さく、比較的大電流を流す
ことが可能な厚膜メタライズ層を有する厚膜セラミック
ス基板を提供することが可能となる。[Effects of the Invention] As explained above, according to the present invention, it has high bonding strength, excellent solder resistance and solder wettability, and furthermore, has low electrical resistance and can flow a relatively large current. It becomes possible to provide a thick film ceramic substrate having a thick film metallized layer.
Claims (1)
ス基板表面に形成された導電性を有する厚膜メタライズ
層とを有する厚膜セラミックス基板において、前記厚膜
メタライズ層は、Ｃｕを６０〜８０重量％、Ｔｉ、Ｚｒ
およびＮｂから選ばれた少なくとも １種を １〜１０
重量％含有し、残部が実質的にＡｇからなるメタライズ
用組成物により形成されてなること特徴とする厚膜セラ
ミックス基板。1. A thick film ceramic substrate comprising a ceramic substrate and a conductive thick film metallized layer formed on the surface of the ceramic substrate, wherein the thick film metallized layer contains 60 to 80% by weight of Cu and 60 to 80% by weight of Ti. ,Zr
and at least one selected from Nb 1 to 10
1. A thick film ceramic substrate characterized in that it is formed from a metallizing composition containing % by weight and the remainder substantially consisting of Ag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5119791A JPH04285085A (en) | 1991-03-15 | 1991-03-15 | Ceramic substrate with thick film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5119791A JPH04285085A (en) | 1991-03-15 | 1991-03-15 | Ceramic substrate with thick film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04285085A true JPH04285085A (en) | 1992-10-09 |
Family
ID=12880162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5119791A Withdrawn JPH04285085A (en) | 1991-03-15 | 1991-03-15 | Ceramic substrate with thick film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04285085A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0618309A1 (en) * | 1992-10-21 | 1994-10-05 | Tokin Corporation | Metal powder composition for metallization and metallized substrate |
| WO2000040520A1 (en) * | 1998-12-31 | 2000-07-13 | Ceramic Fuel Cells Limited | Electrically conductive ceramics |
-
1991
- 1991-03-15 JP JP5119791A patent/JPH04285085A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0618309A1 (en) * | 1992-10-21 | 1994-10-05 | Tokin Corporation | Metal powder composition for metallization and metallized substrate |
| EP0618309A4 (en) * | 1992-10-21 | 1995-03-29 | Tokin Corp | Metal powder composition for metallization and metallized substrate. |
| WO2000040520A1 (en) * | 1998-12-31 | 2000-07-13 | Ceramic Fuel Cells Limited | Electrically conductive ceramics |
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