JPH04274370A - Semiconductor device and manufacture thereof and semiconductor integrated circuit - Google Patents

Semiconductor device and manufacture thereof and semiconductor integrated circuit

Info

Publication number
JPH04274370A
JPH04274370A JP3034878A JP3487891A JPH04274370A JP H04274370 A JPH04274370 A JP H04274370A JP 3034878 A JP3034878 A JP 3034878A JP 3487891 A JP3487891 A JP 3487891A JP H04274370 A JPH04274370 A JP H04274370A
Authority
JP
Japan
Prior art keywords
write
formed
time
manufacture
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3034878A
Inventor
Masaharu Yamamoto
Original Assignee
Matsushita Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electron Corp filed Critical Matsushita Electron Corp
Priority to JP3034878A priority Critical patent/JPH04274370A/en
Publication of JPH04274370A publication Critical patent/JPH04274370A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To simplify the control of size on manufacture without increasing manufacturing processes, and to prevent erroneous write at the time of read.
CONSTITUTION: The gate electrode structure of two layers is formed. The high- concentration ion implantation 10 of another conductivity type different from a semiconductor substrate 1 is conducted at an incident angle, where the sidewalls of gate electrodes 6, 7 on the source side are shaped on write. The low-concentration ion implatation 11 of another conductivity type different from the semiconductor substrance 1 is performed at an incident angle, where the sidewalls of the gate electrodes 6, 7 on the drain side are shaped on write. Impurities 12, 13 implanted are diffused through heat treatment, and high- concentration diffusion layers 2, 4 and low-concentration diffusion layers 3, 5 are formed. A wiring electrode 15 on the drain side at the time of write and a wiring electrode 16 on the source side at the time of write are formed.
COPYRIGHT: (C)1992,JPO&Japio
JP3034878A 1991-03-01 1991-03-01 Semiconductor device and manufacture thereof and semiconductor integrated circuit Pending JPH04274370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3034878A JPH04274370A (en) 1991-03-01 1991-03-01 Semiconductor device and manufacture thereof and semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3034878A JPH04274370A (en) 1991-03-01 1991-03-01 Semiconductor device and manufacture thereof and semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH04274370A true JPH04274370A (en) 1992-09-30

Family

ID=12426403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3034878A Pending JPH04274370A (en) 1991-03-01 1991-03-01 Semiconductor device and manufacture thereof and semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH04274370A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232413A (en) * 1992-12-31 1994-08-19 Hyundai Electron Ind Co Ltd Flash eeprom and manufacture thereof
JPH08330457A (en) * 1995-06-02 1996-12-13 Hyundai Electron Ind Co Ltd Formation of junction of flash eeprom cell
US6312997B1 (en) * 1998-08-12 2001-11-06 Micron Technology, Inc. Low voltage high performance semiconductor devices and methods
JP2004274031A (en) * 2003-03-11 2004-09-30 Hynix Semiconductor Inc Method of manufacturing semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232413A (en) * 1992-12-31 1994-08-19 Hyundai Electron Ind Co Ltd Flash eeprom and manufacture thereof
JPH08330457A (en) * 1995-06-02 1996-12-13 Hyundai Electron Ind Co Ltd Formation of junction of flash eeprom cell
US6312997B1 (en) * 1998-08-12 2001-11-06 Micron Technology, Inc. Low voltage high performance semiconductor devices and methods
US6492693B2 (en) 1998-08-12 2002-12-10 Micron Technology, Inc. Low voltage high performance semiconductor devices and methods
US6747326B2 (en) 1998-08-12 2004-06-08 Micron Technology, Inc. Low voltage high performance semiconductor device having punch through prevention implants
US6946353B2 (en) 1998-08-12 2005-09-20 Micron Technology, Inc. Low voltage high performance semiconductor devices and methods
JP2004274031A (en) * 2003-03-11 2004-09-30 Hynix Semiconductor Inc Method of manufacturing semiconductor device

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