JPH0427134A - Measuring device for dc parameter of semiconductor - Google Patents

Abstract

PURPOSE:To improve measurement accuracy by installing an electric measurement means per measurement pin in a device which places a plurality of measurement pins into contact with electrodes of a semiconductor device formed on a semiconductor wafer and measures DC parameters of said device with an electric means. CONSTITUTION:A probe section 2 of the measurement device holds a semiconductor wafer 3 and provides a mount 4 movable in the direction of X-Y-Z directions where a probe card 6 equipped with a plurality of measurement pins 6 is fixedly installed on the mount. The drive of the mount 4 forces the measurement pins 5 to come into contact with the electrode pad formed between semiconductor chips of the semiconduc tor wafer 3. A measurement section 1 is provided with the same number of measure ment units 7 to the aforesaid measurement pins 5, and electrically connected with each measurement pin 5 by way of conductor patterns and the like formed on the probe card 6. Moreover, a voltage measuring instrument 8, an electric current measur ing instrument 9, and a capacity measuring instrument 10 are installed thereon. A change-over mechanism 11 allows the respective measuring instruments from 8 to 10 to be changed over. This construction makes it possible to prevent the occurrence of leakage current or voltage drop in a matrix where no large matrix does not exist.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a semiconductor DC parameter measurement device.

(Prior Art) Traditionally, in the field of semiconductor manufacturing, DC parameters (e.g. current, voltage, , electric capacity, etc.), semiconductor D
1llj is determined using a C parameter measuring device.

For example, in monitoring manufacturing processes, test chips (TEG: 1st element group) are placed between normal semiconductor chips formed on a semiconductor wafer.
) is provided in advance and the DC parameters of the test chip are measured.

Such a semiconductor DC parameter measuring device has a large number of measurement pins in order to obtain electrical continuity with a large number of electrode pads formed on a semiconductor wafer. Further, as the electrical measuring mechanism, for example, one current measuring mechanism, one voltage measuring mechanism, one capacitance measuring mechanism, etc. are provided. Then, an electrical circuit network (hereinafter referred to as a matrix) having an electrical switching function that is interposed between these electrical measurement mechanisms and a large number of measurement pins selects the measurement pins to be measured and switches them sequentially. Accordingly, each measurement pin is measured by one electrical 61 constant mechanism.

Note that the matrix is configured by, for example, combining a large number of mechanical relays.

(Problems to be Solved by the Invention) However, in general, a semiconductor DC parameter measuring device is provided with about several dozen (for example, 50) measurement pins. For this reason, in the conventional semiconductor DC parameter measuring device described above, the scale of the matrix for switching the measurement pins becomes large, and this matrix causes leakage current and voltage drop, resulting in a decrease in measurement accuracy. There was a problem.

The present invention has been made in response to such conventional circumstances, and it is an object of the present invention to provide a semiconductor DC parameter measuring device that can significantly improve measurement accuracy compared to the conventional method.

[Structure of the Invention] (Means for Solving the Problems) That is, the present invention brings a plurality of measurement pins into contact with the electrodes of a semiconductor element formed on a semiconductor wafer, and measures the DC parameters of the semiconductor element using electrical measuring means. In the semiconductor DC parameter measuring device to be measured, for each measurement pin,
Each of them is characterized by being provided with the electrical measuring means.

(Function) In the semiconductor DC parameter measuring device of the present invention, electrical measuring means consisting of, for example, current measuring means, voltage measuring means, capacitance measuring means, etc. are provided for each measuring pin.

Therefore, unlike the conventional method, a large-scale matrix is not required, and since there is no leakage current or voltage drop in the matrix, measurement accuracy can be significantly improved compared to the conventional method.

(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

As shown in FIG. 1, the semiconductor DC parameter measuring device of this embodiment is composed of a measuring section 1 and a probe section 2. As shown in FIG.

The probe section 2 holds a semiconductor wafer 3 on its upper surface,
It is equipped with a mounting table 4 configured to be movable in the X-Y-Z directions, and a plurality of (for example, about 50) measuring pins (probes) 5 are provided at predetermined positions on the upper part of the mounting table 4. A probe card 6 is fixed. By driving the mounting table 4, the measuring pins 5 are brought into contact with the electrode pads of the test chips formed between the normal semiconductor chips of the semiconductor wafer 3.

Note that the mounting table 4 is provided with a control mechanism (not shown) consisting of a microcomputer, etc., and by programming the position of the test chip on the semiconductor wafer 3 in advance, it is possible to control the position of the test chip on the semiconductor wafer 3. The structure is such that the measurement pin 5 can be automatically brought into contact with the electrode pad of the chip.

On the other hand, the measurement unit 1 is provided with the same number of measurement units 7 as the measurement pins 5, and these n1 constant units 7 and each DI constant bin 5 are connected to the conductor pattern formed on the probe card 6 and It is electrically connected via a measuring cable or the like.

In addition, the measurement unit 7 includes, as shown in FIG.
Voltage measuring device 8, current measuring device 9, capacity--1 regulator 10
These measuring devices 8 to 10 can be switched by an electrical switching mechanism 11 to measure voltage, current, and capacitance. Note that the capacitance measuring device 10 has a high voltage side (high) terminal and a low voltage side (
low) terminals are required, so these are also switching mechanism 1.
1.

In the semiconductor DC parameter measuring apparatus of this embodiment having the above configuration, the semiconductor wafer 3 to be measured is positioned and placed at a predetermined position on the mounting table 4 by an automatic transport device or manual operation. Then, as described above, the position of the test chip to be measured on the semiconductor wafer 3 is input, and the mounting table 4 is driven to bring the measurement pins 5 into contact with the electrode pads of the test chip. The measurement unit 7 of 1 measures DC parameters, that is, voltage, current, and capacitance.

Note that this measurement result is converted into a digital signal by, for example, an A/D converter and stored in a memory, as in a conventional semiconductor DC parameter measurement device. and,
It is configured so that it can be printed out from a printer or displayed on a display device such as a CRT, if necessary.

That is, in the semiconductor DC parameter measuring device of this embodiment, a measuring unit 7 is provided corresponding to each measuring pin 5, and unlike the conventional semiconductor DC parameter measuring device, for example, a large number of mechanical relays are provided. There is no matrix between the measuring pins 5 and the measuring unit 7.

Therefore, the occurrence of leakage current in the matrix,
Since there is no voltage drop, measurement accuracy can be significantly improved compared to conventional methods.

In addition, if simultaneous measurement is possible due to the configuration of the test chip, for example, voltage measurement between electrode pad a and electrode pad B, and voltage measurement between electrode pad C and electrode pad d (or In cases where multiple measurements (current measurement, capacitance measurement) can be performed simultaneously, multiple measurements can be performed simultaneously (parallel), making it possible to significantly reduce the time required for measurement compared to conventional methods, and increase throughput. It is possible to achieve a significant improvement in performance.

[Effects of the Invention] As explained above, according to the semiconductor DC parameter measuring device of the present invention, a large-scale matrix is not interposed between the measurement pin and the measurement unit as in the conventional case, so that the leakage current in the matrix is reduced. It is possible to prevent the occurrence of voltage drop and voltage drop, and it is possible to significantly improve measurement accuracy compared to the conventional method.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the configuration of a semiconductor DC parameter measuring device according to an embodiment of the present invention, and FIG. 2 is a diagram showing the configuration of the measurement unit of FIG. 1. 1... Measuring section, 2... Probe section, 3
... Semiconductor wafer, 4 ... Mounting table, 5
...Measuring pin, 6...Probe card, 7...Measuring unit, 8...Voltage measuring device, 9... Current measuring device , 10... Capacity measuring device, 11... Switching mechanism. Applicant Tokyo Electron Ltd.

Claims (2)

[Claims] (1) In a semiconductor DC parameter measuring device in which a plurality of measurement pins are brought into contact with electrodes of a semiconductor element formed on a semiconductor wafer, and DC parameters of the semiconductor element are measured by an electrical measurement means, each of the measurement pins is A semiconductor DC parameter measuring device comprising the electrical measuring means. (2) The semiconductor DC parameter measuring device according to claim 1, wherein the electrical measuring means comprises a current measuring means, a voltage measuring means, and a capacitance measuring means.