JPH0426558B2 - - Google Patents

Info

Publication number
JPH0426558B2
JPH0426558B2 JP60062803A JP6280385A JPH0426558B2 JP H0426558 B2 JPH0426558 B2 JP H0426558B2 JP 60062803 A JP60062803 A JP 60062803A JP 6280385 A JP6280385 A JP 6280385A JP H0426558 B2 JPH0426558 B2 JP H0426558B2
Authority
JP
Japan
Prior art keywords
face
active layer
laser diode
resonator
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60062803A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61220394A (ja
Inventor
Shoichi Kakimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6280385A priority Critical patent/JPS61220394A/ja
Publication of JPS61220394A publication Critical patent/JPS61220394A/ja
Publication of JPH0426558B2 publication Critical patent/JPH0426558B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP6280385A 1985-03-26 1985-03-26 レーザダイオードの製造方法 Granted JPS61220394A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6280385A JPS61220394A (ja) 1985-03-26 1985-03-26 レーザダイオードの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6280385A JPS61220394A (ja) 1985-03-26 1985-03-26 レーザダイオードの製造方法

Publications (2)

Publication Number Publication Date
JPS61220394A JPS61220394A (ja) 1986-09-30
JPH0426558B2 true JPH0426558B2 (en, 2012) 1992-05-07

Family

ID=13210859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6280385A Granted JPS61220394A (ja) 1985-03-26 1985-03-26 レーザダイオードの製造方法

Country Status (1)

Country Link
JP (1) JPS61220394A (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821756B2 (ja) * 1986-10-31 1996-03-04 セイコーエプソン株式会社 半導体レーザの製造方法
JP2545233B2 (ja) * 1987-07-02 1996-10-16 セイコーエプソン株式会社 半導体レ−ザの製造方法
JP2629190B2 (ja) * 1987-07-24 1997-07-09 セイコーエプソン株式会社 半導体レーザの製造方法
JP2629722B2 (ja) * 1987-08-06 1997-07-16 セイコーエプソン株式会社 半導体レーザの製造方法
JP2629194B2 (ja) * 1987-08-28 1997-07-09 セイコーエプソン株式会社 半導体レーザの製造方法
JP2679057B2 (ja) * 1987-09-10 1997-11-19 セイコーエプソン株式会社 半導体レーザの製造方法
JP2687668B2 (ja) * 1990-04-17 1997-12-08 日本電気株式会社 高出力半導体レーザ素子及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527474B2 (en, 2012) * 1971-12-17 1980-07-21

Also Published As

Publication number Publication date
JPS61220394A (ja) 1986-09-30

Similar Documents

Publication Publication Date Title
JPS63318195A (ja) 横方向埋め込み型面発光レ−ザ
US4803691A (en) Lateral superradiance suppressing diode laser bar
US4280108A (en) Transverse junction array laser
JPS6343908B2 (en, 2012)
JPH0426558B2 (en, 2012)
US4916709A (en) Semiconductor laser device
US4759025A (en) Window structure semiconductor laser
US4514896A (en) Method of forming current confinement channels in semiconductor devices
JPH0518473B2 (en, 2012)
US4447905A (en) Current confinement in semiconductor light emitting devices
GB2095474A (en) Semiconductor light emitting devices
US4879725A (en) Semiconductor laser device having extended facet life
JPH073908B2 (ja) 半導体発光装置の製造方法
KR0141057B1 (ko) 반도체 레이저 제조방법
JP2765850B2 (ja) 高出力半導体レーザ素子
JPS62137893A (ja) 半導体レ−ザ
JP2679974B2 (ja) 半導体レーザ装置
JPH0156547B2 (en, 2012)
JPH05299693A (ja) 端面発光型半導体装置
JPH0474876B2 (en, 2012)
JP2685499B2 (ja) 半導体レーザ素子
JPH01132189A (ja) 半導体レーザ素子およびその製造方法
JPH0433386A (ja) 端面出射型半導体発光素子およびその駆動方法
JPH02213186A (ja) 半導体レーザ装置
JPS6379390A (ja) 半導体レ−ザ装置