JPH0423316U - - Google Patents
Info
- Publication number
- JPH0423316U JPH0423316U JP6435290U JP6435290U JPH0423316U JP H0423316 U JPH0423316 U JP H0423316U JP 6435290 U JP6435290 U JP 6435290U JP 6435290 U JP6435290 U JP 6435290U JP H0423316 U JPH0423316 U JP H0423316U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- compound semiconductor
- semiconductor field
- amplifier circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000003321 amplification Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 241000287127 Passeridae Species 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図はシールドケースの上ブタ部をはずした状態の
斜視図、第３図は調整状態を説明する断面図、第
４図は本考案の実施前の入力リターンロスを示す
特性図、第５図は本考案を実施後の入力リターン
ロスを示す特性図、第６図は従来例を示す断面図
である。
１……化合物半導体電界効果型トランジスタ（
化合物ＦＥＴ）、３……プリント基板、４……ソ
ース接地パターン、８……シールドケース、９…
…コの字型すずめつき線、１３……ソース端子。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is a perspective view with the top cover of the shield case removed, Figure 3 is a sectional view explaining the adjustment state, Figure 4 is a characteristic diagram showing the input return loss before implementation of the present invention, and Figure 5 is A characteristic diagram showing input return loss after implementing the present invention, and FIG. 6 is a sectional view showing a conventional example. 1... Compound semiconductor field effect transistor (
compound FET), 3... printed circuit board, 4... source grounding pattern, 8... shield case, 9...
... U-shaped sparrow wire, 13... Source terminal.
Claims (1)
収納される化合物半導体電界効果型トランジスタ
を有するマイクロ波増幅回路において、 前記化合物半導体電界効果型トランジスタのソ
ース接地部に半田接続され、該化合物半導体電界
効果型トランジスタ上をおおう、変形可能なコの
字型金属線を取付けてなることを特徴とするマイ
クロ波増幅回路。[Scope of Claim for Utility Model Registration] In a microwave amplifier circuit having a compound semiconductor field effect transistor mounted on a printed circuit board and housed in a shield case, the microwave amplifier circuit has a compound semiconductor field effect transistor connected by solder to a source grounding part of the compound semiconductor field effect transistor. , a microwave amplification circuit characterized in that a deformable U-shaped metal wire is attached to cover the compound semiconductor field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6435290U JPH0423316U (en) | 1990-06-18 | 1990-06-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6435290U JPH0423316U (en) | 1990-06-18 | 1990-06-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0423316U true JPH0423316U (en) | 1992-02-26 |
Family
ID=31595222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6435290U Pending JPH0423316U (en) | 1990-06-18 | 1990-06-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0423316U (en) |
-
1990
- 1990-06-18 JP JP6435290U patent/JPH0423316U/ja active Pending
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