JPH0423149U - - Google Patents

Info

Publication number
JPH0423149U
JPH0423149U JP6319890U JP6319890U JPH0423149U JP H0423149 U JPH0423149 U JP H0423149U JP 6319890 U JP6319890 U JP 6319890U JP 6319890 U JP6319890 U JP 6319890U JP H0423149 U JPH0423149 U JP H0423149U
Authority
JP
Japan
Prior art keywords
electrode
photoelectric conversion
conversion element
extraction electrode
extraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6319890U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6319890U priority Critical patent/JPH0423149U/ja
Publication of JPH0423149U publication Critical patent/JPH0423149U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Description

【図面の簡単な説明】
第１図乃至第３図は本考案の一実施例を示し、
第１図は平面図、第２図は要部平面図、第３図は
第２図における−線断面図である。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 基板上に、第１電極、半導体光活性層及び
    第２電極を順に積層し、第１電極及び第２電極の
    夫々に取出電極を接続した光電変換素子において
    、少なくとも上記第１電極に接続された取出電極
    は、その表面が凹凸状とされたことを特徴とする
    光電変換素子。 (2) 少なくとも上記第１電極に接続された取出
    電極と対向する部分の第１電極上に、櫛状の導電
    部材が形成されたことにより、上記取出電極の表
    面が凹凸状とされたことを特徴とする請求項１記
    載の光電変換素子。 (3) 少なくとも上記第１電極に接続された取出
    電極と対向する部分の基板表面が凹凸状とされる
    ことにより、上記取出電極の表面が凹凸状とされ
    たことを特徴とする請求項１記載の光電変換素子
    。
JP6319890U 1990-06-13 1990-06-13 Pending JPH0423149U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6319890U JPH0423149U (ja) 1990-06-13 1990-06-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6319890U JPH0423149U (ja) 1990-06-13 1990-06-13

Publications (1)

Publication Number Publication Date
JPH0423149U true JPH0423149U (ja) 1992-02-26

Family

ID=31593034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6319890U Pending JPH0423149U (ja) 1990-06-13 1990-06-13

Country Status (1)

Country Link
JP (1) JPH0423149U (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356968A (en) * 1976-11-01 1978-05-23 Toshiba Corp High frequency semiconductor device
JPS5322657B2 (ja) * 1972-12-18 1978-07-10
JPS53140967A (en) * 1977-05-13 1978-12-08 Matsushita Electric Ind Co Ltd Production of electrodes of semiconductor device
JPS54101263A (en) * 1978-01-26 1979-08-09 Nec Corp Semiconductor device
JPS57208152A (en) * 1981-06-17 1982-12-21 Toshiba Corp Semiconductor wafer
JPS62123781A (ja) * 1985-11-22 1987-06-05 Sharp Corp 光電変換素子
JPS62209872A (ja) * 1986-03-11 1987-09-16 Fuji Electric Corp Res & Dev Ltd 光電変換素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322657B2 (ja) * 1972-12-18 1978-07-10
JPS5356968A (en) * 1976-11-01 1978-05-23 Toshiba Corp High frequency semiconductor device
JPS53140967A (en) * 1977-05-13 1978-12-08 Matsushita Electric Ind Co Ltd Production of electrodes of semiconductor device
JPS54101263A (en) * 1978-01-26 1979-08-09 Nec Corp Semiconductor device
JPS57208152A (en) * 1981-06-17 1982-12-21 Toshiba Corp Semiconductor wafer
JPS62123781A (ja) * 1985-11-22 1987-06-05 Sharp Corp 光電変換素子
JPS62209872A (ja) * 1986-03-11 1987-09-16 Fuji Electric Corp Res & Dev Ltd 光電変換素子

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