JPH04224B2 - - Google Patents
Info
- Publication number
- JPH04224B2 JPH04224B2 JP58126723A JP12672383A JPH04224B2 JP H04224 B2 JPH04224 B2 JP H04224B2 JP 58126723 A JP58126723 A JP 58126723A JP 12672383 A JP12672383 A JP 12672383A JP H04224 B2 JPH04224 B2 JP H04224B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- sensitive
- hydrophobic
- membrane
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012528 membrane Substances 0.000 claims description 33
- 230000002209 hydrophobic effect Effects 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 10
- 229920001600 hydrophobic polymer Polymers 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 4
- 229910001424 calcium ion Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229920001218 Pullulan Polymers 0.000 description 2
- 239000004373 Pullulan Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 108010067973 Valinomycin Proteins 0.000 description 2
- FCFNRCROJUBPLU-UHFFFAOYSA-N compound M126 Natural products CC(C)C1NC(=O)C(C)OC(=O)C(C(C)C)NC(=O)C(C(C)C)OC(=O)C(C(C)C)NC(=O)C(C)OC(=O)C(C(C)C)NC(=O)C(C(C)C)OC(=O)C(C(C)C)NC(=O)C(C)OC(=O)C(C(C)C)NC(=O)C(C(C)C)OC1=O FCFNRCROJUBPLU-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910001414 potassium ion Inorganic materials 0.000 description 2
- 235000019423 pullulan Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- FCFNRCROJUBPLU-DNDCDFAISA-N valinomycin Chemical compound CC(C)[C@@H]1NC(=O)[C@H](C)OC(=O)[C@@H](C(C)C)NC(=O)[C@@H](C(C)C)OC(=O)[C@H](C(C)C)NC(=O)[C@H](C)OC(=O)[C@@H](C(C)C)NC(=O)[C@@H](C(C)C)OC(=O)[C@H](C(C)C)NC(=O)[C@H](C)OC(=O)[C@@H](C(C)C)NC(=O)[C@@H](C(C)C)OC1=O FCFNRCROJUBPLU-DNDCDFAISA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000006133 sodium aluminosilicate glass Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
Description
【発明の詳細な説明】
本発明は半導体マルチイオンセンサの製造方法
に関し、特に半導体の電界効果を化学−電気変換
に使用する半導体イオンセンサを集積化してなる
半導体マルチイオンセンサの製造方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor multi-ion sensor, and more particularly to a method of manufacturing a semiconductor multi-ion sensor that integrates semiconductor ion sensors that use the electric field effect of semiconductors for chemical-electrical conversion. be.
従来溶液中のイオン濃度を測定する半導体イオ
ンセンサの一種に電界効果型トランジスタを用い
たイオンセンサ（Ｉon Ｓensitive Ｆield Ｅ
ffect Ｔransistor、以下ISFETと略す）が知ら
れている。該ISFETは通常のMOSFETにおいて
金属ゲート電極がイオンを感じて電圧を発生する
イオン感応膜に置き換えられた構造を持ち、イオ
ン選択性を持つイオン感応膜を使用することによ
り溶液中の特定のイオンの濃度を測定できるもの
である。 Conventionally , an ion sensor using a field effect transistor is a type of semiconductor ion sensor that measures the ion concentration in a solution .
ffect transistor (hereinafter abbreviated as ISFET) is known. The ISFET has a structure in which the metal gate electrode of a normal MOSFET is replaced with an ion-sensitive membrane that senses ions and generates a voltage.By using an ion-selective ion-sensitive membrane, it detects specific ions in a solution. It is capable of measuring concentration.
該イオン選択性を持つイオン感応膜の例として
は水素イオン測定用の窒化シリコン膜、五酸化タ
ンタル、ナトリウムイオン測定用のナトリウムア
ルミノシリケートガラスなどの無機材料の他に、
疎水性高分子膜中にニユートラルキヤリヤーやイ
オン交換体を固定化して形成されるイオン感応膜
があり。たとえばバリノマイシンを疎水性高分子
膜に固定化したカリウムイオン（K+）を選択的
に検出するイオン感応膜やカルシウムイオン交換
体を疎水性高分子膜に固定化したカルシウムイオ
ン（Ca++）を選択的に検出するイオン感応膜な
どが知られている。 Examples of ion-sensitive membranes with ion selectivity include inorganic materials such as silicon nitride membranes for hydrogen ion measurements, tantalum pentoxide, and sodium aluminosilicate glass for sodium ion measurements.
There is an ion-sensitive membrane formed by immobilizing a neutral carrier or ion exchanger in a hydrophobic polymer membrane. For example, an ion-sensitive membrane that selectively detects potassium ions (K + ) has valinomycin immobilized on a hydrophobic polymer membrane, and a calcium ion (Ca ++ ) membrane that has a calcium ion exchanger immobilized on a hydrophobic polymer membrane. Ion-sensitive membranes for selective detection are known.
一方、該ISFETの半導体部分は通常の半導体
集積回路用MOSFETとほぼ同様の製造技術によ
り製作されるので、微小化、集積化が容易に行う
ことができる。したがつて、複数の異なるイオン
感応膜をそれぞれ１つの半導体チツプ内につくら
れた複数の電界効果トランジスタの上に設けるこ
とにより、溶液中の複数のイオン濃度を同時に測
定できる微小なマルチイオンの製作が可能とな
り、多成分からなる微量溶液の測定、たとえば微
量血液のイオン濃度測定に適したものとなる。 On the other hand, since the semiconductor portion of the ISFET is manufactured using substantially the same manufacturing technology as that of a normal MOSFET for semiconductor integrated circuits, miniaturization and integration can be easily achieved. Therefore, by providing a plurality of different ion-sensitive membranes on a plurality of field effect transistors each formed within a single semiconductor chip, it is possible to create a microscopic multi-ion structure that can simultaneously measure the concentration of multiple ions in a solution. This makes it suitable for measuring trace amounts of solutions consisting of multiple components, for example, measuring the ion concentration of trace amounts of blood.
近年、光硬化性の高分子膜たとえばネガ型フオ
トレジストあるいはネガ型フオトレジストと塩化
ビニルの混合物に可塑剤を添化した膜をイオン選
択性物質を固定化する膜として用い、半導体ウエ
ーハ上に塗布した後ISFETのイオン感応膜部分
に光を照射し、該ISFET上にのみイオン感応膜
を設ける技術が報告されている。この方法により
半導体ウエーハ上の複数のISFETに一種類の疎
水性高分子からなるイオン感応膜を同時に設ける
ことが可能になつた。 In recent years, photocurable polymer films, such as negative photoresists or a mixture of negative photoresists and vinyl chloride with a plasticizer added, have been used as films to immobilize ion-selective substances and coated on semiconductor wafers. A technique has been reported in which the ion-sensitive film portion of the ISFET is then irradiated with light and the ion-sensitive film is provided only on the ISFET. This method made it possible to simultaneously provide ion-sensitive membranes made of one type of hydrophobic polymer to multiple ISFETs on a semiconductor wafer.
しかし、上記の方法を複数種の疎水性高分子イ
オン感応膜を持つマルチイオンセンサの製作に適
用した場合、最初に設けた疎水性高分子膜と次に
塗布される疎水性高分子膜は互いに混ざり、該
ISFETの感度が低下したりイオン選択性がそこ
なわれたりするという欠点が生じた。 However, when the above method is applied to the fabrication of a multi-ion sensor that has multiple types of hydrophobic polymer ion-sensitive membranes, the first hydrophobic polymer membrane and the next applied hydrophobic polymer membrane are different from each other. mix, match
The drawbacks were that the sensitivity of the ISFET decreased and the ion selectivity was impaired.
本発明の目的は、このような従来の欠点を除去
し、互いに異なる成分を持つ疎水性高分子膜を複
数個同一チツプ上にイオン感応膜として混ざりあ
うことなく容易に形成することができる半導体マ
ルチイオンセンサの製造方法を提供することにあ
る。 The purpose of the present invention is to eliminate such conventional drawbacks and to provide a semiconductor multilayer film that can easily form a plurality of hydrophobic polymer films having different components on the same chip without mixing as ion-sensitive films. An object of the present invention is to provide a method for manufacturing an ion sensor.
本発明によれば複数個の異なるイオン感応膜を
もつ半導体電界効果型イオンセンサが集積化され
てなる半導体マルチイオンセンサの製造方法にお
いて、半導体ウエーハ上に多数設けられたチツプ
の第１のイオンセンサ部に第１の疎水性膜からな
るイオン感応膜を形成した後、該第１の疎水性イ
オン感応膜をそれよりも大きい面積を持つ親水性
膜により覆い、次に第２の光硬化型疎水性膜から
なるイオン感応膜を該半導体ウエーハ上に塗布し
た後、露光、現像により第２のイオンセンサ部に
のみ残し、その後該親水性膜だけ溶剤により除去
することを特徴とする半導体マルチイオンセンサ
の製造方法が得られる。 According to the present invention, in a method for manufacturing a semiconductor multi-ion sensor in which semiconductor field-effect ion sensors having a plurality of different ion-sensitive films are integrated, a first ion sensor of a plurality of chips provided on a semiconductor wafer is provided. After forming an ion-sensitive film made of a first hydrophobic film on the part, the first hydrophobic ion-sensitive film is covered with a hydrophilic film having a larger area, and then a second photocurable hydrophobic film is formed. A semiconductor multi-ion sensor characterized in that after an ion-sensitive film made of a hydrophilic film is coated on the semiconductor wafer, it remains only on the second ion sensor portion by exposure and development, and then only the hydrophilic film is removed with a solvent. A manufacturing method is obtained.
以下本発明についてその一実施例を図面を参照
して説明する。第１図〜第５図は本発明による半
導体マルチイオンセンサの製造方法の一実施例を
説明するための図で主要工程における断面図であ
る。同図はシリコンウエーハ上に互いに異なる疎
水性イオン感応膜を持つ２個のISFETを形成す
る場合について示している。第１図〜第５図にお
いて、１はｐ形シリコン基板、２は高不純物濃度
ｎ形領域、３は高不純物濃度ｐ形領域、４は絶縁
膜、５は第１疎水性イオン感応膜、６は親水性保
護膜、７は第２疎水性イオン感応膜である。次に
製造工程を順を追つて説明する。ｐ形シリコンウ
エーハに不純物を拡散して高不純物濃度ｎ形領域
２と高不純物濃度ｐ形領域３を形成した後、絶縁
膜２をシリコンの熱酸化及び窒化シリコンのケミ
カル・ベーパ・デイポジシヨンにより設ける。そ
の後、ウエーハ上に光により硬化する特性をもつ
第１の疎水性イオン感応膜を塗布し、露光・現像
により所定のISFETの位置に第１の疎水性イオ
ン感応膜を設ける（第１図）。次に光により硬化
する特性を持つ親水性膜をウエーハ表面に塗布
し、露光、現像により、第１の疎水性イオン感応
膜を十分覆う領域に残す（第２図）。その後、第
２の光により硬化する特性を持つ疎水性イオン感
応膜７をウエーハ表面に塗布する（第３図）。こ
のとき第１の疎水性イオン感応膜５は、親水性膜
６により覆われているので、第２の疎水性イオン
感応膜と接着したり、混ざることはない。次に所
定のフオトマスクを用い露光し、現像により第２
の疎水性イオン感応膜を第２のISFETの位置に
設ける（第４図）。その後、親水性保護膜６を親
水性溶剤により取り除くと、互いに異なるイオン
感応膜を持つ２種類のISFETを同一チツプ上に
形成することができた（第５図）。 An embodiment of the present invention will be described below with reference to the drawings. FIGS. 1 to 5 are cross-sectional views of main steps for explaining an embodiment of the method for manufacturing a semiconductor multi-ion sensor according to the present invention. This figure shows the case where two ISFETs having different hydrophobic ion-sensitive films are formed on a silicon wafer. 1 to 5, 1 is a p-type silicon substrate, 2 is a high impurity concentration n-type region, 3 is a high impurity concentration p-type region, 4 is an insulating film, 5 is a first hydrophobic ion-sensitive film, and 6 is a p-type silicon substrate. is a hydrophilic protective film, and 7 is a second hydrophobic ion-sensitive film. Next, the manufacturing process will be explained step by step. After diffusing impurities into a p-type silicon wafer to form a high impurity concentration n-type region 2 and a high impurity concentration p-type region 3, an insulating film 2 is provided by thermal oxidation of silicon and chemical vapor deposition of silicon nitride. Thereafter, a first hydrophobic ion-sensitive film having the property of being cured by light is applied onto the wafer, and the first hydrophobic ion-sensitive film is provided at a predetermined ISFET position by exposure and development (Fig. 1). Next, a hydrophilic film having properties of being cured by light is applied to the wafer surface, and is left in an area sufficiently covering the first hydrophobic ion-sensitive film by exposure and development (FIG. 2). Thereafter, a hydrophobic ion-sensitive film 7 having a property of being cured by the second light is applied to the wafer surface (FIG. 3). At this time, the first hydrophobic ion-sensitive membrane 5 is covered with the hydrophilic membrane 6, so it does not adhere or mix with the second hydrophobic ion-sensitive membrane. Next, it is exposed to light using a predetermined photomask, and developed to create a second
A hydrophobic ion-sensitive membrane is provided at the position of the second ISFET (Fig. 4). Thereafter, when the hydrophilic protective film 6 was removed using a hydrophilic solvent, two types of ISFETs having different ion-sensitive films could be formed on the same chip (FIG. 5).
以上の工程において、第１の疎水性イオン感応
膜としてカルシウムイオン交換体と可塑剤を含ん
だネガ型フオトレジスト、第２の疎水性イオン感
応膜としてバリノマイシンと可塑剤を含んだネガ
型フオトレジストを用いることにより、カルシウ
ムイオン濃度とカリウムイオン濃度を測定できる
マルチイオンセンサが製作できた。このとき、親
水性膜６としてはたとえば光重合性を持つたプル
ラン膜を用いればよく、プルランは、水により現
像できまた温水に容易に溶解するためイオン感応
膜に悪影響を与えることなく使用できた。 In the above steps, a negative photoresist containing a calcium ion exchanger and a plasticizer is used as the first hydrophobic ion-sensitive membrane, and a negative photoresist containing valinomycin and a plasticizer is used as the second hydrophobic ion-sensitive membrane. By using this method, we were able to create a multi-ion sensor that can measure calcium ion and potassium ion concentrations. At this time, the hydrophilic membrane 6 may be, for example, a photopolymerizable pullulan membrane. Pullulan can be developed with water and is easily dissolved in hot water, so it can be used without adversely affecting the ion-sensitive membrane. .
本発明によれば、２種類の疎水性イオン感応膜
はスピンコートなどの方法で容易にウエーハ上に
設けられ、かつ親水性膜により互いに分離されて
製造されるため疎水性膜同士が接着したり混ざり
合つたりすることなく独立に設けることができ、
性能をそこなうことなく互いに異なる疎水性イオ
ン感応膜をもつISFETを同一チツプ上に製造で
きた。 According to the present invention, two types of hydrophobic ion-sensitive films are easily provided on a wafer by a method such as spin coating, and are separated from each other by a hydrophilic film, so that the hydrophobic films do not adhere to each other. Can be installed independently without mixing,
We were able to fabricate ISFETs with different hydrophobic ion-sensitive membranes on the same chip without sacrificing performance.
本発明による方法は、３種類以上の疎水性イオ
ン感応膜をもつ半導体マルチイオンセンサに適用
できることは明らかである。 It is clear that the method according to the invention can be applied to semiconductor multi-ion sensors having three or more types of hydrophobic ion-sensitive membranes.
第１図〜第５図は本発明による半導体マルチイ
オンセンサの製造方法の一実施例を説明するため
の図で、主要工程における断面図で、同図におい
て、１はｐ形シリコン基板、２は高不純物濃度ｎ
形領域、３は高不純物濃度ｐ形領域、４は絶縁
膜、５は第１疎水性イオン感応膜、６は親水性保
護膜、７は第２疎水性イオン感応膜である。
1 to 5 are diagrams for explaining one embodiment of the method for manufacturing a semiconductor multi-ion sensor according to the present invention, and are cross-sectional views of main steps. In the diagram, 1 is a p-type silicon substrate, 2 is a High impurity concentration n
3 is a high impurity concentration p-type region, 4 is an insulating film, 5 is a first hydrophobic ion-sensitive film, 6 is a hydrophilic protective film, and 7 is a second hydrophobic ion-sensitive film.
Claims (1)
界効果型イオンセンサが集積化されてなる半導体
マルチイオンセンサの製造方法において、半導体
ウエーハ上に多数設けられたチツプの第１のイオ
ンセンサ部に第１の疎水性膜からなるイオン感応
膜を形成した後、該第１の疎水性イオン感応膜を
それよりも大きい面積を持つ親水性膜により覆
い、次に第２の光硬化型疎水性膜からなるイオン
感応膜を該半導体ウエーハ上に塗布した後、露
光、現像により第２のイオンセンサ部にのみ残
し、その後該親水性膜だけを溶剤により除去する
ことを特徴とする半導体マルチイオンセンサの製
造方法。1. In a method for manufacturing a semiconductor multi-ion sensor in which semiconductor field-effect ion sensors having a plurality of different ion-sensitive membranes are integrated, a first ion sensor section of a plurality of chips provided on a semiconductor wafer is provided with a first ion sensor section. After forming an ion-sensitive membrane consisting of a hydrophobic membrane, the first hydrophobic ion-sensitive membrane is covered with a hydrophilic membrane having a larger area, and then a second photocurable hydrophobic membrane is formed. A method for producing a semiconductor multi-ion sensor, which comprises coating an ion-sensitive film on the semiconductor wafer, leaving it only on the second ion sensor portion by exposure and development, and then removing only the hydrophilic film with a solvent. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126723A JPS6018750A (en) | 1983-07-12 | 1983-07-12 | Preparation of semiconductive multiple ion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126723A JPS6018750A (en) | 1983-07-12 | 1983-07-12 | Preparation of semiconductive multiple ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6018750A JPS6018750A (en) | 1985-01-30 |
| JPH04224B2 true JPH04224B2 (en) | 1992-01-06 |
Family
ID=14942275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58126723A Granted JPS6018750A (en) | 1983-07-12 | 1983-07-12 | Preparation of semiconductive multiple ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6018750A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009045475B4 (en) * | 2009-10-08 | 2023-06-29 | Robert Bosch Gmbh | Gas-sensitive semiconductor device and use thereof |
-
1983
- 1983-07-12 JP JP58126723A patent/JPS6018750A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6018750A (en) | 1985-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100375908B1 (en) | Dry microlithography | |
| US4302530A (en) | Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material | |
| GB2030358A (en) | Ion selective-field-effect sensor | |
| US4644380A (en) | Substance-sensitive electrical structures | |
| JPH04224B2 (en) | ||
| Park et al. | Effect of membrane structure on the performance of field-effect transistor potassium-sensitive sensor | |
| JPS6039547A (en) | Multi-enzyme sensor | |
| JPS6057218B2 (en) | Manufacturing method of semiconductor device | |
| JPH03278432A (en) | Forming method for wiring of semiconductor device | |
| JPH03222409A (en) | Manufacture of semiconductor device | |
| JPH07130751A (en) | Method of patterning aluminum system metal film | |
| TWI817274B (en) | Method for defining multiple resist patterns | |
| JPS6047950A (en) | Fet multi-sensor | |
| US6309804B1 (en) | Reducing contamination induced scumming, for semiconductor device, by acid treatment | |
| JPH0548419B2 (en) | ||
| JPS61234349A (en) | Manufacture of semiconductor multi-biosensor | |
| JPH0544986B2 (en) | ||
| JPS60252253A (en) | Fet sensor | |
| JPH0319540B2 (en) | ||
| KR0163405B1 (en) | Ion sensor using ph-isfet | |
| EP0599975A1 (en) | Batch deposition of polymeric ion sensor membranes | |
| JPS61198051A (en) | Formation of electrode for semiconductor ion sensor | |
| JPH0926669A (en) | Production of photoresist film pattern and production of processed body | |
| JPS6158236A (en) | Pattern forming method | |
| JPS63186139A (en) | Method for selective inactivation of enzyme immobilized film |