JPH04218632A - Lead frame material for bare bonding - Google Patents
Lead frame material for bare bondingInfo
- Publication number
- JPH04218632A JPH04218632A JP3080706A JP8070691A JPH04218632A JP H04218632 A JPH04218632 A JP H04218632A JP 3080706 A JP3080706 A JP 3080706A JP 8070691 A JP8070691 A JP 8070691A JP H04218632 A JPH04218632 A JP H04218632A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- elements
- content
- bonding
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 24
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 abstract description 23
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 239000006023 eutectic alloy Substances 0.000 abstract description 12
- 229910015365 Au—Si Inorganic materials 0.000 abstract description 11
- 229910052759 nickel Inorganic materials 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 229910020108 MgCu2 Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はベアボンディング用リー
ドフレーム材料に係り、さらに詳しくはＡｕ−Ｓｉの共
晶合金法を利用してベアボンディングを行なっても半導
体素子へのリードフレーム材料の成分元素による悪影響
の無い銅系リードフレーム材料に関する。[Industrial Application Field] The present invention relates to a lead frame material for bare bonding, and more specifically, even if bare bonding is performed using an Au-Si eutectic alloy method, the constituent elements of the lead frame material are not attached to a semiconductor element. This invention relates to copper-based lead frame materials that do not have any adverse effects.
【０００２】0002
【従来の技術】半導体の組立工程は、素子（半導体チッ
プ）とリードフレームを接合するダイボンディング工程
、素子の配線とリードフレームをＡｕやＡｌのワイヤで
接続するワイヤボンディング工程および樹脂で封止する
工程よりなる。これらの工程においてリードフレームは
加熱されるため、使用されるリードフレーム材料はこれ
らの加熱によっても軟化しないこと、即ち耐熱性が要求
される。[Background Art] Semiconductor assembly processes include a die bonding process for bonding an element (semiconductor chip) and a lead frame, a wire bonding process for connecting element wiring and lead frames with Au or Al wires, and sealing with resin. Consists of processes. Since the lead frame is heated in these steps, the lead frame material used must not be softened by the heating, that is, must have heat resistance.
【０００３】一方、熱伝導性や電気伝導性に優れる銅合
金はトランジスタ等、良好な熱放散性が要求される用途
を中心にリードフレーム材料として使用されている。On the other hand, copper alloys with excellent thermal conductivity and electrical conductivity are used as lead frame materials mainly in applications such as transistors that require good heat dissipation.
【０００４】これらの銅系リードフレーム材料は、耐熱
性や機械的強度、半田付け性など、リードフレーム材料
として要求される特性を満足させるために、各種添加元
素を含有した銅合金となっている。[0004] These copper-based lead frame materials are copper alloys containing various additive elements in order to satisfy the properties required for lead frame materials such as heat resistance, mechanical strength, and solderability. .
【０００５】上記組立工程の内、ダイボンディング工程
では、通常三種類の方法により素子とリードフレームが
接合されている。即ち、Ａｕ−Ｓｉ共晶合金法、半田接
着法、導電性樹脂接着法である。これらの方法の内、Ａ
ｕ−Ｓｉ共晶合金法は、３７０℃の共晶温度より５０〜
７０℃高い４２０〜４４０℃の温度に素子およびリード
フレームを数十秒間加熱することにより接合を行うもの
である。[0005] Among the above assembly processes, in the die bonding process, the element and the lead frame are usually bonded using three types of methods. That is, the Au-Si eutectic alloy method, the solder bonding method, and the conductive resin bonding method. Among these methods, A
The u-Si eutectic alloy method has a eutectic temperature of 50 to 370°C.
Bonding is performed by heating the element and lead frame to a temperature of 420 to 440°C, which is 70°C higher, for several tens of seconds.
【０００６】ところで、半導体装置におけるコストダウ
ンの要求は強く、その一つの手段として、従来行ってい
たリードフレームへのめっきを省略してダイボンディン
グやワイヤボンディングを行うベアボンディングと称す
る技術がトランジスタを中心に広まりつつある。By the way, there is a strong demand for cost reduction in semiconductor devices, and as one means of achieving this, a technology called bare bonding, in which die bonding or wire bonding is performed without plating the lead frame, which was conventionally done, is being used mainly for transistors. It is becoming widespread.
【０００７】しかるに、各種添加元素を含有した従来の
合金よりなるリードフレームにつき前記のＡｕ−Ｓｉ共
晶合金法によりベアボンディングを行ったところ、半導
体素子の特性に変化をきたすことが判明した。However, when bare bonding was performed using the Au--Si eutectic alloy method on a lead frame made of a conventional alloy containing various additive elements, it was found that the characteristics of the semiconductor element changed.
【０００８】[0008]
【発明が解決しようとする課題】本発明は、Ａｕ−Ｓｉ
共晶合金法を用いてベアボンディングを行っても、半導
体素子の特性に変化をきたすことがなく、かつ、耐熱性
や機械的強度にも優れたベアボンディング用リードフレ
ーム材料を提供することを目的とする。[Problems to be Solved by the Invention] The present invention is directed to Au-Si
The purpose is to provide a lead frame material for bare bonding that does not cause any change in the characteristics of semiconductor elements even when bare bonding is performed using the eutectic alloy method, and has excellent heat resistance and mechanical strength. shall be.
【０００９】[0009]
【課題を解決するための手段】本発明に係るベアボンデ
ィング用リードフレーム材料の第１の特徴とするところ
は、Ｎｉ：０．１〜１．０ｗｔ％、Ｓｉ：０．０１〜０
．２５ｗｔ％、Ｚｎ：０．０５〜１．０ｗｔ％を含有し
、ＩＩＩｂ族の元素を総量で０．０１ｗｔ％以下、Ｖｂ
族の元素を総量で０．０１ｗｔ％以下に制限し、残部実
質的にＣｕよりなることを特徴とするベアボンディング
用リードフレーム材料。[Means for Solving the Problems] The first feature of the lead frame material for bare bonding according to the present invention is that Ni: 0.1 to 1.0 wt%, Si: 0.01 to 0.
．． 25 wt%, Zn: 0.05 to 1.0 wt%, total amount of IIIb group elements not more than 0.01 wt%, Vb
A lead frame material for bare bonding, characterized in that the total amount of group elements is limited to 0.01 wt% or less, and the remainder is substantially made of Cu.
【００１０】本発明に係るベアボンディング用リードフ
レーム材料の第２の特徴とするところは、Ｎｉ：０．１
〜１．０ｗｔ％、Ｓｉ：０．０１〜０．２５ｗｔ％、Ｚ
ｎ：０．０５〜１．０ｗｔ％、Ｍｎ：０．０１〜０．０
５ｗｔ％、Ｍｇ：０．００１〜０．０１ｗｔ％、Ｃｒ，
Ｔｉ，Ｚｒの内から選ばれる１種または２種以上を０．
００１〜０．０１ｗｔ％を含有し、ＩＩＩｂ族の元素を
総量で０．０１ｗｔ％以下、Ｖｂ族の元素を総量で０．
０１ｗｔ％以下に制限し、残部実質的にＣｕよりなるこ
とを特徴とするベアボンディング用リードフレーム材料
に存在する。The second feature of the lead frame material for bare bonding according to the present invention is that Ni: 0.1
~1.0wt%, Si:0.01~0.25wt%, Z
n: 0.05 to 1.0 wt%, Mn: 0.01 to 0.0
5wt%, Mg: 0.001-0.01wt%, Cr,
One or more selected from Ti and Zr in an amount of 0.
001 to 0.01 wt%, the total amount of group IIIb elements is 0.01 wt% or less, and the total amount of group Vb elements is 0.01 wt% or less.
The lead frame material for bare bonding is limited to 0.01 wt% or less, and the remainder is substantially made of Cu.
【００１１】[0011]
【作用】以下に、本発明の作用を本発明をなすに際して
得た知見及び成分の限定理由とともに説明する。[Function] The function of the present invention will be explained below along with the findings obtained in making the present invention and the reasons for limiting the components.
【００１２】本発明者は、従来合金について、Ａｕ−Ｓ
ｉ共晶合金法を用いてベアボンディングを行った場合に
半導体素子の特性に変化をきたす原因の解明をまず行っ
た。[0012] Regarding the conventional alloy, the present inventor has discovered that Au-S
We first investigated the cause of changes in the characteristics of semiconductor devices when bare bonding is performed using the i-eutectic alloy method.
【００１３】その結果、次のことが判明した。すなわち
、４２０〜４４０℃に数十秒間加熱される間に溶融した
Ａｕ−Ｓｉ層に接した銅合金リードフレーム中の成分元
素はＡｕ−Ｓｉ層を通過し、半導体素子中に拡散する。As a result, the following was found. That is, the component elements in the copper alloy lead frame that are in contact with the melted Au-Si layer while being heated to 420 to 440° C. for several tens of seconds pass through the Au-Si layer and diffuse into the semiconductor element.
【００１４】半導体素子中に拡散する元素の中でも、周
期表のＩＩＩｂ族に属するＢ，Ａｌ，Ｇａ，ＩｎやＶｂ
族に属するＮ，Ｐ，Ａｓ，ＳｂなどはＳｉ半導体に対し
アクセプターおよびドナーとして作用しそれぞれＰ型お
よびＮ型半導体を形成する。トランジスタの場合、一般
にリードフレームと接合されるＳｉ素子の底面部はコレ
クターになっており、この部分に前記のＩＩＩｂ族ある
いはＶｂ族に属する元素がリードフレームから侵入し、
不純物半導体を形成し、トランジスタの電気的特性に悪
影響を及ぼすものであることを見い出した。すなわち、
従来の銅合金は、耐熱性、機械的強度を高めるために各
種添加元素を含有せしめていたが、この添加元素や不純
物が、Ａｕ−Ｓｉ共晶合金法を用いたベアボンディング
を行った場合には、半導体素子の電気的特性を悪化させ
る原因となっていたわけである。Among the elements that diffuse into semiconductor elements, B, Al, Ga, In, and Vb, which belong to Group IIIb of the periodic table, are
N, P, As, Sb, etc. belonging to the group act as acceptors and donors for Si semiconductors, forming P-type and N-type semiconductors, respectively. In the case of a transistor, the bottom part of the Si element that is generally joined to the lead frame is a collector, and elements belonging to the IIIb group or Vb group enter this part from the lead frame.
It was discovered that the impurity semiconductor forms and has an adverse effect on the electrical characteristics of transistors. That is,
Conventional copper alloys contain various additive elements to increase heat resistance and mechanical strength, but these additive elements and impurities can cause problems when bare bonding is performed using the Au-Si eutectic alloy method. This caused deterioration of the electrical characteristics of the semiconductor element.
【００１５】本発明はかかる知見に基づいてなされたも
のである。The present invention has been made based on this knowledge.
【００１６】まず本発明に係るベアボンディング用リー
ドフレーム材料の含有成分および成分の割合について説
明する。
（Ｎｉ）Ｎｉは次に説明するＳｉとともに強度および耐
熱性の向上に寄与する元素である。ＮｉとＳｉは金属間
化合物を形成することにより強度および耐熱性を向上さ
せる。First, the components and proportions of the components contained in the lead frame material for bare bonding according to the present invention will be explained. (Ni) Ni is an element that contributes to improving strength and heat resistance together with Si, which will be described next. Ni and Si improve strength and heat resistance by forming an intermetallic compound.
【００１７】Ｎｉの含有量が０．１ｗｔ％未満ではその
効果は少なく、また１．０ｗｔ％を超えて含有されると
強度や耐熱性は向上するものの導電率が低下する。よっ
てＮｉ含有量は０．１〜１．０ｗｔ％とする。
（Ｓｉ）ＳｉもＮｉとともに強度および耐熱性を向上さ
せる元素である。Ｓｉ含有量が０．０１ｗｔ％未満では
その効果は少なく、また０．２５ｗｔ％を超えて含有さ
れると強度や耐熱性は向上するものの導電率が低下する
。よってＳｉ含有量は０．０１〜０．２５ｗｔ％とする
。If the Ni content is less than 0.1 wt%, the effect will be small, and if it is more than 1.0 wt%, the strength and heat resistance will improve, but the electrical conductivity will decrease. Therefore, the Ni content is set to 0.1 to 1.0 wt%. (Si) Si is also an element that improves strength and heat resistance together with Ni. If the Si content is less than 0.01 wt%, the effect will be small, and if the Si content exceeds 0.25 wt%, the electrical conductivity will decrease although the strength and heat resistance will improve. Therefore, the Si content is set to 0.01 to 0.25 wt%.
【００１８】ＮｉとＳｉは金属間化合物を形成すること
により強度や耐熱性の向上に寄与することから、Ｎｉと
Ｓｉの含有量の比率はＮｉ／Ｓｉ＝４〜７であることが
望ましい。また、ＮｉとＳｉの金属間化合物を均一微細
に析出させるための溶体化処理、冷間加工および時効処
理を含む製造工程を経ることによりその性能が発揮され
る。
（Ｚｎ）Ｚｎは半田の耐剥離性を向上させる元素であり
、含有量が０．０５ｗｔ％未満ではその効果は少なく、
また１．０ｗｔ％を超えて含有されてもその効果は飽和
する一方、導電率が低下する。よってＺｎ含有量は０．
０５〜１．０ｗｔ％とする。
（Ｍｎ）Ｍｎは熱間加工性を向上させる元素であり、含
有量が０．０１ｗｔ％未満ではその効果は少なく、また
０．０５ｗｔ％を超えて含有されると造塊時の湯流れ性
が悪化して造塊歩留りが低下する。よってＭｎ含有量は
０．０１〜０．０５ｗｔ％とする。
（Ｍｇ）Ｍｇは不可避的に混入してくるＳを安定したＭ
ｇとの化合物の形で母相中に固定させて熱間加工を可能
にするための必須の元素であり、含有量が０．００１ｗ
ｔ％未満ではＳは、ＭｇＳという安定した化合物の形と
はならず、Ｓは単体あるいはＭｎＳの形で存在し、その
結果、ＳあるいはＭｎＳは熱間圧延の加熱時または熱間
圧延中に粒界に移動して割れを生じさせるようになる。Since Ni and Si contribute to improving strength and heat resistance by forming an intermetallic compound, it is desirable that the content ratio of Ni and Si is Ni/Si=4 to 7. Further, its performance is demonstrated through a manufacturing process including solution treatment, cold working, and aging treatment to uniformly and finely precipitate the intermetallic compound of Ni and Si. (Zn) Zn is an element that improves the peeling resistance of solder, and its effect is small when the content is less than 0.05 wt%.
Moreover, even if the content exceeds 1.0 wt%, the effect is saturated, while the conductivity decreases. Therefore, the Zn content is 0.
05 to 1.0 wt%. (Mn) Mn is an element that improves hot workability. If the content is less than 0.01 wt%, the effect is small, and if the content exceeds 0.05 wt%, the flowability during agglomeration will be reduced. This worsens and the yield of agglomerates decreases. Therefore, the Mn content is set to 0.01 to 0.05 wt%. (Mg) Mg is a stable M
It is an essential element to enable hot processing by fixing it in the matrix in the form of a compound with g, and the content is 0.001w.
At less than t%, S does not take the form of a stable compound called MgS, and S exists alone or in the form of MnS, and as a result, S or MnS forms particles during heating or during hot rolling. It moves into the world and causes cracks.
【００１９】また、０．０１ｗｔ％を超える含有量では
鋳塊中にＣｕ＋ＭｇＣｕ２の共晶（融点７２２℃）を生
じ、７２２℃以上の温度に加熱すると割れを発生し、溶
湯が酸化し、湯流れ性が悪化し、鋳塊を不健全とし、造
塊歩留りが低下する。よってＭｇ含有量は０．００１〜
０．０１ｗｔ％とする。（Ｃｒ，Ｔｉ，Ｚｒ）Ｃｒ，Ｔ
ｉ，Ｚｒはいずれの元素も熱間加工性を向上させる元素
であり、含有量が０．００１ｗｔ％未満はこの効果は少
なく、また、０．０１ｗｔ％を超える含有量では造塊時
の湯流れ性が悪化し、造塊歩留りが低下する。よって、
Ｃｒ，Ｔｉ，Ｚｒの含有量は０．００１〜０．０１ｗｔ
％とする。また、Ｃｒ，Ｔｉ，Ｚｒの２種以上を含有す
る場合でも上記に説明した同じ理由から合計含有量は０
．００１〜０．０１ｗｔ％とする。（ＩＩＩｂ族、Ｖｂ
族元素）一方、ＩＩＩｂ族、Ｖｂ族に属するＢ，Ａｌ，
Ｇａ，Ｉｎ，Ｎ，Ｐ，Ａｓ，Ｓｂなどの元素は不純物と
して原料に含まれており、製造された銅合金中に侵入し
て来る。以上の説明から明らかなように、これらの不純
物の含有量は少ない方が良く、使用される半導体によっ
ても異なるが、いずれの元素も総量で０．０１ｗｔ％以
下とする。０．０１ｗｔ％以下とすれば、Ａｕ−Ｓｉ共
晶合金法によりベアボンディングを行ったとしても半導
体素子への拡散はほとんど防止することができる。In addition, if the content exceeds 0.01 wt%, a eutectic of Cu + MgCu2 (melting point 722°C) will occur in the ingot, and when heated to a temperature of 722°C or higher, cracks will occur, the molten metal will oxidize, and the melt flow will be interrupted. The properties of the ingots deteriorate, the ingot becomes unsound, and the yield of ingots decreases. Therefore, the Mg content is 0.001~
It is set to 0.01wt%. (Cr, Ti, Zr) Cr, T
Both i and Zr are elements that improve hot workability, and if the content is less than 0.001 wt%, this effect will be small, and if the content is more than 0.01 wt%, the flow of the hot metal during ingot formation will be reduced. The properties deteriorate and the agglomeration yield decreases. Therefore,
The content of Cr, Ti, and Zr is 0.001 to 0.01wt
%. Furthermore, even if two or more of Cr, Ti, and Zr are contained, the total content is 0 for the same reason explained above.
．． 001 to 0.01 wt%. (IIIb group, Vb
Group elements) On the other hand, B, Al, which belong to Group IIIb and Group Vb,
Elements such as Ga, In, N, P, As, and Sb are contained in raw materials as impurities and invade the manufactured copper alloy. As is clear from the above description, the content of these impurities should be as low as possible, and although it varies depending on the semiconductor used, the total content of each element should be 0.01 wt% or less. If the content is 0.01 wt% or less, diffusion into semiconductor elements can be almost prevented even if bare bonding is performed using the Au-Si eutectic alloy method.
【００２０】これらの元素が不純物として合金中に侵入
するのを防ぐためには、例えば次の手段を講ずればよい
。使用する原料中の不純物の含有量を規制する。これら
の元素を含む合金を溶解した後には十分に炉洗いを行い
、炉材に付着したこれらの元素を除去してから溶解する
。また、るつぼもこれら元素を含まない材料からなるも
のを選ぶ。In order to prevent these elements from entering the alloy as impurities, the following measures may be taken, for example. Regulate the content of impurities in the raw materials used. After melting the alloy containing these elements, the furnace is thoroughly washed to remove these elements attached to the furnace material before melting. In addition, a crucible made of a material that does not contain these elements is also selected.
【００２１】以上説明したように、本発明では、銅合金
において組成比を所定の割合にするとともに、ＩＩＩｂ
族、Ｖｂ族の元素の含有量を制限することにより、Ａｕ
−Ｓｉ共晶合金法によるベアボンディングという用途の
適性の拡大を行うことができる。As explained above, in the present invention, the copper alloy has a predetermined composition ratio, and IIIb
By limiting the content of group Vb elements, Au
The applicability of bare bonding using the -Si eutectic alloy method can be expanded.
【００２２】[0022]
【実施例】本発明に係るベアボンディング用リードフレ
ーム材料を実施例により説明する。EXAMPLES The lead frame material for bare bonding according to the present invention will be explained by way of examples.
【００２３】表１に示す含有成分および含有の割合の合
金をクリプトル炉を使用し、木炭被覆下において大気中
で溶解し、鋳鉄製ブックモールドを用いて４５ｍｍｔ×
８０ｍｍｗ×２００ｍｍｌの鋳塊を鋳造した後、この鋳
塊の表裏面を２．５ｍｍずつ面削後８７０℃の温度で１
５ｍｍｔまで熱間圧延し、７００℃以上の温度から３０
℃／秒の速度で水冷した。[0023] An alloy having the components and proportions shown in Table 1 was melted in the atmosphere under charcoal coating using a Kryptor furnace, and was molded into a 45 mm thick piece using a cast iron book mold.
After casting an ingot of 80 mmw x 200 mml, the front and back sides of this ingot were milled by 2.5 mm and heated at a temperature of 870°C.
Hot rolled to 5mmt and rolled at 30°C from a temperature of 700℃ or higher.
Water cooling was performed at a rate of °C/sec.
【００２４】さらに、冷間圧延により０．５ｍｍの板厚
にした後、５００℃の温度で１２０分間の焼鈍を行ない
、その後冷間圧延により０．４ｍｍｔの板材を得た。
この板材につき導電率、硬さ、耐熱性の試験を行った。[0024] Furthermore, after cold rolling the plate to a thickness of 0.5 mm, it was annealed at a temperature of 500°C for 120 minutes, and then cold rolled to obtain a plate of 0.4 mm. This plate material was tested for electrical conductivity, hardness, and heat resistance.
【００２５】これらの試料の試験結果を表２に示す。The test results for these samples are shown in Table 2.
【００２６】[0026]
【表１】[Table 1]
【００２７】[0027]
【表２】[Table 2]
【００２８】試験方法は以下に説明する通りである。
（１）導電率は１５ｍｍｗ×３００ｍｌの試験片を用い
、ダブルブリッジにより測定した電気抵抗の値から算出
した。
（２）硬さは、マイクロビッカース硬さ計を用い荷重５
００ｇｒで測定した。
（３）耐熱性はソルトバスを用い、各温度で５分間の加
熱を行なった後硬さを測定し、加熱後の硬さが加熱前の
硬さの８０％になる温度をもって評価した。
（４）半田の耐剥離性は、２０ｍｍｗ×５０ｍｍｌの試
験片に６０Ｓｎ−４０Ｐｂの半田を弱活性フラックスを
用い２３０℃の温度で５秒間浸漬して半田付けした後、
１５０℃の温度で５００時間加熱後、２ｍｍＲで１８０
°曲げ戻しを行ない、剥離の有無を調べ評価した。The test method is as described below. (1) Electrical conductivity was calculated from the electrical resistance value measured with a double bridge using a 15 mmw x 300 ml test piece. (2) Hardness was measured using a micro Vickers hardness tester under a load of 5
Measured at 00gr. (3) Heat resistance was evaluated by measuring the hardness after heating at each temperature for 5 minutes using a salt bath, and at the temperature at which the hardness after heating was 80% of the hardness before heating. (4) Peeling resistance of solder was determined by immersing 60Sn-40Pb solder into a 20 mmw x 50 mml test piece using weakly activated flux for 5 seconds at a temperature of 230°C.
After heating at a temperature of 150℃ for 500 hours, 180℃ at 2mmR.
°Bending was performed and the presence or absence of peeling was examined and evaluated.
【００２９】表２から明らかなように、本発明合金Ｎｏ
．１〜Ｎｏ．５は５５％ＩＡＣＳ以上の良好な導電率と
Ｈｖ１００以上の硬さ、および４００℃以上の耐熱性を
有している。また、Ｚｎの効果により半田の耐剥離性も
良好である。As is clear from Table 2, the alloy No.
．． 1~No. No. 5 has good electrical conductivity of 55% IACS or higher, hardness of Hv100 or higher, and heat resistance of 400°C or higher. Furthermore, due to the effect of Zn, the solder peeling resistance is also good.
【００３０】これに対し比較例Ｎｏ．６はＮｉおよびＳ
ｉ量が高く硬さや耐熱性には優れるものの導電率が４８
％ＩＡＣＳと低い。またＮｏ．７はＮｉおよびＳｉ量が
低いため導電率は高いが耐熱性が３７０℃と低い。Ｎｏ
．８はＺｎ含有量が低いため半田の耐剥離性に劣ってい
る。On the other hand, Comparative Example No. 6 is Ni and S
Although it has a high i content and excellent hardness and heat resistance, its conductivity is 48
%IACS is low. Also No. Sample No. 7 has a high electrical conductivity due to the low amounts of Ni and Si, but has a low heat resistance of 370°C. No
．． No. 8 has a low Zn content and is therefore inferior in solder peeling resistance.
【００３１】また、本発明合金Ｎｏ．１〜Ｎｏ．５はＩ
ＩＩｂ族およびＶ族ｂに属する元素がそれぞれ０．０１
ｗｔ％以下であるためＡｕ−Ｓｉ合金法によりベアボン
ディングされてもＳｉ素子の特性を劣化させない。これ
に対し比較例Ｎｏ．６〜Ｎｏ．８はＩＩＩｂ族およびＶ
ｂ族の元素をそれぞれ０．０１ｗｔ％を越えて含有して
いるためＡｕ−Ｓｉ共晶合金法によりベアボンディング
されるとＳｉ素子の特性を劣化させる。[0031] Also, the alloy No. of the present invention. 1~No. 5 is I
Elements belonging to group IIb and group Vb are each 0.01
Since it is less than wt%, the characteristics of the Si element will not deteriorate even if bare bonding is performed by the Au-Si alloy method. On the other hand, comparative example No. 6~No. 8 is group IIIb and V
Since each element of group B is contained in an amount exceeding 0.01 wt%, the characteristics of the Si element deteriorate when bare bonding is performed by the Au-Si eutectic alloy method.
【００３２】[0032]
【発明の効果】以上説明の通り、本発明に係るベアボン
ディング用リードフレーム材料は上記の構成を有してい
るため、導電性、強度、および耐熱性に優れ、かつ安価
であり、めっきを省略しＡｕ−Ｓｉ共晶合金法によるダ
イボンディングを行ってもＳｉ素子に悪影響を及ぼさな
いという効果を有している。[Effects of the Invention] As explained above, the lead frame material for bare bonding according to the present invention has the above structure, so it has excellent conductivity, strength, and heat resistance, is inexpensive, and eliminates plating. This has the effect that even if die bonding is performed using the Au-Si eutectic alloy method, it does not adversely affect the Si element.
Claims (2)
０．０１〜０．２５ｗｔ％、Ｚｎ：０．０５〜１．０ｗ
ｔ％を含有し、ＩＩＩｂ族の元素を総量で０．０１ｗｔ
％以下、Ｖｂ族の元素を総量で０．０１ｗｔ％以下に制
限し、残部実質的にＣｕよりなることを特徴とするベア
ボンディング用リードフレーム材料。[Claim 1] Ni: 0.1 to 1.0 wt%, Si:
0.01-0.25wt%, Zn: 0.05-1.0w
t%, and the total amount of group IIIb elements is 0.01wt.
A lead frame material for bare bonding, characterized in that the total amount of Vb group elements is limited to 0.01 wt% or less, and the remainder substantially consists of Cu.
０．０１〜０．２５ｗｔ％、Ｚｎ：０．０５〜１．０ｗ
ｔ％、Ｍｎ：０．０１〜０．０５ｗｔ％、Ｍｇ：０．０
０１〜０．０１ｗｔ％、Ｃｒ，Ｔｉ，Ｚｒの内から選ば
れる１種または２種以上を０．００１〜０．０１ｗｔ％
を含有し、ＩＩＩｂ族の元素を総量で０．０１ｗｔ％以
下、Ｖｂ族の元素を総量で０．０１ｗｔ％以下に制限し
、残部実質的にＣｕよりなることを特徴とするベアボン
ディング用リードフレーム材料。[Claim 2] Ni: 0.1 to 1.0 wt%, Si:
0.01-0.25wt%, Zn: 0.05-1.0w
t%, Mn: 0.01-0.05wt%, Mg: 0.0
01 to 0.01 wt%, 0.001 to 0.01 wt% of one or more selected from Cr, Ti, and Zr.
A lead frame for bare bonding, characterized in that the group IIIb elements are limited to a total amount of 0.01 wt% or less, the Vb group elements are limited to a total amount of 0.01 wt% or less, and the remainder substantially consists of Cu. material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3080706A JP2834593B2 (en) | 1990-06-25 | 1991-03-19 | Lead frame material for bare bonding |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16595490 | 1990-06-25 | ||
| JP2-165954 | 1990-06-25 | ||
| JP3080706A JP2834593B2 (en) | 1990-06-25 | 1991-03-19 | Lead frame material for bare bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04218632A true JPH04218632A (en) | 1992-08-10 |
| JP2834593B2 JP2834593B2 (en) | 1998-12-09 |
Family
ID=26421680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3080706A Expired - Fee Related JP2834593B2 (en) | 1990-06-25 | 1991-03-19 | Lead frame material for bare bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2834593B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0949343A1 (en) * | 1998-03-26 | 1999-10-13 | KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. | Copper alloy sheet for electronic parts |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS572851A (en) * | 1980-06-06 | 1982-01-08 | Nippon Mining Co Ltd | Copper alloy for lead material of semiconductor device |
| JPS63297531A (en) * | 1987-05-29 | 1988-12-05 | Kobe Steel Ltd | Copper alloy for terminal and lead frame having excellent hot workability and its production |
-
1991
- 1991-03-19 JP JP3080706A patent/JP2834593B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS572851A (en) * | 1980-06-06 | 1982-01-08 | Nippon Mining Co Ltd | Copper alloy for lead material of semiconductor device |
| JPS63297531A (en) * | 1987-05-29 | 1988-12-05 | Kobe Steel Ltd | Copper alloy for terminal and lead frame having excellent hot workability and its production |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0949343A1 (en) * | 1998-03-26 | 1999-10-13 | KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. | Copper alloy sheet for electronic parts |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2834593B2 (en) | 1998-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |