JPH04216550A - Production of mask for exposure - Google Patents
Production of mask for exposureInfo
- Publication number
- JPH04216550A JPH04216550A JP2403138A JP40313890A JPH04216550A JP H04216550 A JPH04216550 A JP H04216550A JP 2403138 A JP2403138 A JP 2403138A JP 40313890 A JP40313890 A JP 40313890A JP H04216550 A JPH04216550 A JP H04216550A
- Authority
- JP
- Japan
- Prior art keywords
- shielding film
- tungsten
- resist pattern
- pattern
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000005855 radiation Effects 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 30
- 229910052721 tungsten Inorganic materials 0.000 abstract description 30
- 239000010937 tungsten Substances 0.000 abstract description 30
- 238000006073 displacement reaction Methods 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、例えば半導体装置の
製造時に使用するＸ線露光用マスク等の露光用マスクの
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an exposure mask such as an X-ray exposure mask used, for example, in manufacturing semiconductor devices.
【０００２】0002
【従来の技術】図８ないし図１３は従来のＸ線露光用マ
スクの製造方法を示す説明するための断面図である。2. Description of the Related Art FIGS. 8 to 13 are sectional views for explaining a conventional method of manufacturing an X-ray exposure mask.
【０００３】先ず図８に示すように、厚さ０．５〜２．
０ｍｍ程度のＳｉウエハ１の両面に減圧ＣＶＤ法等によ
ってＳｉＮ又はＢＮなどの膜２，３を厚さ２μｍ程度に
形成する。First, as shown in FIG. 8, the thickness is 0.5 to 2.
Films 2 and 3 made of SiN or BN are formed to a thickness of about 2 μm on both sides of a Si wafer 1 of about 0 mm by low pressure CVD or the like.
【０００４】次いで図９に示すように、下面の膜３の中
心部分をエッチングによって除去し、Ｘ線露光の露光エ
リア４を形成する。その後、ＫＯＨの水溶液を用いＳｉ
ウエハ１にエッチングを施す。この場合、図１０に示す
ように下面に残存する膜３がマスクとなってＳｉウエハ
１の中心部分が除去され環状フレーム５が整形される一
方、Ｓｉウエハ１の上面の膜２は除去されず残る。Next, as shown in FIG. 9, the central portion of the film 3 on the lower surface is removed by etching to form an exposure area 4 for X-ray exposure. Then, using an aqueous solution of KOH, Si
Etching is performed on wafer 1. In this case, as shown in FIG. 10, the central portion of the Si wafer 1 is removed using the film 3 remaining on the bottom surface as a mask and the annular frame 5 is shaped, while the film 2 on the top surface of the Si wafer 1 is not removed. remain.
【０００５】次に、スパッタ法、蒸着法等によりＸ線吸
収体膜であるタングステン６を図１１に示すように膜２
上に形成する。そして、タングステン６上にレジストを
形成し、露光エリア４に対応する領域にＥＢ（電子線）
を選択的に照射し現像して図１２に示すように所定のレ
ジストパターン７を形成する。次に、レジストパターン
７をマスクとしてタングステン６にプラズマエッチング
を施し、図１３に示すようにタングステン６の露光エリ
ア４に対応する領域をパターニングし、Ｘ線吸収体のパ
ターン８を形成する。このようにしてＸ線露光用マスク
を形成する。Next, tungsten 6, which is an X-ray absorber film, is formed into a film 2 by sputtering, vapor deposition, etc. as shown in FIG.
Form on top. Then, a resist is formed on the tungsten 6, and an EB (electron beam) is applied to the area corresponding to the exposure area 4.
is selectively irradiated and developed to form a predetermined resist pattern 7 as shown in FIG. Next, plasma etching is performed on the tungsten 6 using the resist pattern 7 as a mask, and as shown in FIG. 13, a region of the tungsten 6 corresponding to the exposure area 4 is patterned to form an X-ray absorber pattern 8. In this way, an X-ray exposure mask is formed.
【０００６】[0006]
【発明が解決しようとする課題】従来のＸ線露光用マス
クの製造方法は以上のような工程で行われ、ＥＢ露光に
よりレジストパターン７を形成している。レジストパタ
ーン７に接しているタングステン６は接地されていない
ので、ＥＢ照射時にレジストパターン７がチャージアッ
プされ、これが原因でレジストパターン７の位置ずれあ
るいは変形が生じ、このレジストパターン７をマスクと
してタングステン６にエッチングを施すと、所定寸法の
パターン８が得られないという問題点があった。A conventional method for manufacturing an X-ray exposure mask is carried out through the steps described above, and the resist pattern 7 is formed by EB exposure. Since the tungsten 6 in contact with the resist pattern 7 is not grounded, the resist pattern 7 is charged up during EB irradiation, which causes displacement or deformation of the resist pattern 7. Using this resist pattern 7 as a mask, the tungsten 6 is When etching is performed, there is a problem that a pattern 8 of a predetermined size cannot be obtained.
【０００７】また、プラズマエッチングによりＸ線吸収
体のパターン８を形成している。パターン８に接してい
る膜２は熱伝導率は良いが、膜２に接している環状フレ
ーム５を構成しているＳｉは熱伝導率が悪いので、プラ
ズマエッチング時にパターン８の温度が上昇し、パター
ン８に熱ひずみが生じパターン８に位置ずれが生じると
いう問題点があった。Furthermore, the pattern 8 of the X-ray absorber is formed by plasma etching. The film 2 in contact with the pattern 8 has good thermal conductivity, but the Si constituting the annular frame 5 in contact with the film 2 has poor thermal conductivity, so the temperature of the pattern 8 increases during plasma etching. There was a problem in that the pattern 8 was thermally strained and the pattern 8 was misaligned.
【０００８】この発明は上記のような問題点を解決する
ためになされたもので、遮蔽膜を所定寸法に精度良く形
成することができる露光用マスクの形成方法を得ること
を目的とする。The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method for forming an exposure mask that can form a shielding film to a predetermined size with high accuracy.
【０００９】[0009]
【課題を解決するための手段】請求項１に記載の発明は
、露光用の照射線を透過する基板上に前記照射線を遮蔽
する遮蔽膜を形成し、前記遮蔽膜上にレジストパターン
を形成し、前記レジストパターンをマスクとして前記遮
蔽膜を選択的にエッチングし、前記遮蔽膜を所定のパタ
ーンに形成する露光用マスクの製造方法に適用される。[Means for Solving the Problems] The invention as set forth in claim 1 includes forming a shielding film for blocking the exposure radiation on a substrate through which the exposure radiation passes, and forming a resist pattern on the shielding film. The present invention is applied to a method of manufacturing an exposure mask, in which the shielding film is selectively etched using the resist pattern as a mask, and the shielding film is formed into a predetermined pattern.
【００１０】そして、前記遮蔽膜を導電性の優れたもの
にし、前記遮蔽膜で前記基板を覆い、前記遮蔽膜に所定
電位を与えつつ、前記遮蔽膜上に前記レジストパターン
を形成することを特徴としている。[0010]The shielding film is made to have excellent conductivity, the substrate is covered with the shielding film, and the resist pattern is formed on the shielding film while applying a predetermined potential to the shielding film. It is said that
【００１１】また請求項２に記載の発明は、露光用の照
射線を透過する基板上に前記照射線を遮蔽する遮蔽膜を
形成した後、前記遮蔽膜を所定のパターンにパターニン
グする露光用マスクの製造方法に適用される。The invention according to claim 2 also provides an exposure mask for forming a shielding film for blocking the exposure radiation on a substrate through which the exposure radiation passes, and then patterning the shielding film into a predetermined pattern. Applies to manufacturing methods.
【００１２】そして、前記遮蔽膜を熱伝導性の優れたも
のとし、前記遮蔽膜で前記基板を覆い、前記基板の裏面
の前記遮蔽膜を介して冷却しつつ、前記遮蔽膜を所定の
パターンにパターニングすることを特徴としている。[0012] The shielding film is made to have excellent thermal conductivity, the shielding film covers the substrate, and the shielding film is formed into a predetermined pattern while cooling through the shielding film on the back surface of the substrate. It is characterized by patterning.
【００１３】[0013]
【作用】前者の露光用マスクの製造方法においては、遮
蔽膜を導電性の優れたものにし、遮蔽膜で基板を覆い、
遮蔽膜に所定電位を与えつつ、遮蔽膜上にレジストパタ
ーンを形成するようにしているので、レジストパターン
に蓄積された電荷は遮蔽膜を介して放電され、レジスト
パターンがチャージアップされることがない。[Function] In the former method of manufacturing an exposure mask, the shielding film is made to have excellent conductivity, and the substrate is covered with the shielding film.
Since a resist pattern is formed on the shielding film while applying a predetermined potential to the shielding film, the charges accumulated in the resist pattern are discharged through the shielding film, and the resist pattern is not charged up. .
【００１４】後者の露光用マスクの製造方法においては
、遮蔽膜を熱伝導性の優れたものとし、遮蔽膜で基板を
覆い、基板の裏面の遮蔽膜を介して冷却しつつ、遮蔽膜
を所定のパターンにパターニングするようにしたので、
遮蔽膜のパターニング時に遮蔽膜の温度が上昇しない。In the latter method of manufacturing an exposure mask, the shielding film is made of a material having excellent thermal conductivity, the shielding film is used to cover the substrate, and the shielding film is heated to a predetermined temperature while cooling through the shielding film on the back surface of the substrate. I decided to pattern it in the pattern of
The temperature of the shielding film does not rise during patterning of the shielding film.
【００１５】[0015]
【実施例】図１ないし図７はこの発明に係わる露光用マ
スクの製造方法を説明するための断面図である。図１な
いし図３は、Ｘ線の透過基板として働く膜２上にタング
ステン６を形成するまでの工程を示す断面工程図であり
、その工程は図１０ないし図１３に示した従来の製造方
法と同様である。つまり、Ｓｉウエハ１の両面に膜２，
３を形成し（図１）、その後、膜３の中心部分をエッチ
ング除去し、露光エリア４を形成する（図２）。次に、
膜３をマスクとしてＳｉウエハ１にエッチングを施す（
図３）。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1 to 7 are cross-sectional views for explaining a method of manufacturing an exposure mask according to the present invention. 1 to 3 are cross-sectional process diagrams showing the steps up to forming tungsten 6 on a film 2 that serves as an X-ray transparent substrate, and the steps are different from the conventional manufacturing method shown in FIGS. 10 to 13. The same is true. In other words, the film 2 is on both sides of the Si wafer 1.
3 is formed (FIG. 1), and then the central portion of the film 3 is etched away to form an exposed area 4 (FIG. 2). next,
Etching is performed on the Si wafer 1 using the film 3 as a mask (
Figure 3).
【００１６】次に、ＣＶＤ法を用いて図４に示すように
マスク全体を包むようにＸ線吸収体膜（遮蔽膜）である
タングステン６を推積させる。なお、タングステン６は
熱伝導性および導電性に優れる。次に、タングステン６
上にＥＢレジストを塗布し、ＥＢを選択的にＥＢレジス
トに照射し現像してＥＢレジストにパターニングを施し
、図５に示すようにレジストパターン７を形成する。
ＥＢを照射する場合、タングステン６にＧＮＤ電位を与
えておく。タングステン６は前述のように導電性に優れ
ているので、ＥＢ照射時にレジストパターン７に蓄積さ
れた電荷はタングステン６を介してＧＮＤに放電される
。そのためレジストパターン７がチャージアップされる
ことがなく、レジストパターン７の位置ずれあるいは変
形は生じない。Next, using the CVD method, tungsten 6, which is an X-ray absorber film (shielding film), is deposited so as to cover the entire mask as shown in FIG. Note that tungsten 6 has excellent thermal conductivity and electrical conductivity. Next, tungsten 6
An EB resist is applied thereon, and the EB resist is selectively irradiated with EB and developed to pattern the EB resist, forming a resist pattern 7 as shown in FIG. When irradiating with EB, a GND potential is applied to the tungsten 6. Since tungsten 6 has excellent conductivity as described above, the charges accumulated in resist pattern 7 during EB irradiation are discharged to GND via tungsten 6. Therefore, the resist pattern 7 is not charged up, and the resist pattern 7 is not displaced or deformed.
【００１７】次に、レジストパターン７をマスクとして
上部タングステン６にドライエッチングによりパターニ
ングを施す。ドライエッチング時、図６に示すように液
体窒素１０で冷却された下部電極９にタングステン６を
接触させ、上部タングステン６にパターニングを施す。
タングステン６は前述のように熱伝導性に優れているの
で、タングステン６のドライエッチングによるパターニ
ング時、最終的に得られるＸ線吸収体のパターン８の熱
は、Ｘ線透過基板である膜２→側・裏面のタングステン
６→下部電極９の順に逃げていく。そのため、パターン
８の温度が上昇することがなく、パターン８に熱ひずみ
が生じずパターン８の位置ずれが生じることがなくなる
。そして、パターン８をレジストで覆い、他の部分のタ
ングステン６をエッチング除去し、その後、パターン８
を覆ったレジストを除去すると図７に示すようなＸ線露
光用マスクが得られる。Next, using the resist pattern 7 as a mask, the upper tungsten 6 is patterned by dry etching. During dry etching, as shown in FIG. 6, tungsten 6 is brought into contact with lower electrode 9 cooled with liquid nitrogen 10, and upper tungsten 6 is patterned. As mentioned above, tungsten 6 has excellent thermal conductivity, so when patterning tungsten 6 by dry etching, the heat of the pattern 8 of the X-ray absorber that is finally obtained is transferred from the film 2 which is the X-ray transparent substrate to The tungsten escapes from the side and back surfaces in the order of tungsten 6 and lower electrode 9. Therefore, the temperature of the pattern 8 does not rise, thermal strain does not occur in the pattern 8, and positional deviation of the pattern 8 does not occur. Then, the pattern 8 is covered with a resist, the tungsten 6 in other parts is removed by etching, and then the pattern 8 is removed by etching.
When the resist covering the surface is removed, an X-ray exposure mask as shown in FIG. 7 is obtained.
【００１８】なお、上記実施例ではＸ線露光用マスクに
ついて説明したが、その他の露光用マスクにもこの発明
は適用できる。In the above embodiment, an X-ray exposure mask has been described, but the present invention can also be applied to other exposure masks.
【００１９】また、上記実施例では熱伝導性および導電
性に優れた膜としてタングステンを用いたが、これに限
定されない。Further, in the above embodiment, tungsten was used as the film having excellent thermal conductivity and electrical conductivity, but the present invention is not limited to this.
【００２０】さらに、上記実施例では熱伝導性および導
電性ともに優れるタングステン６を用いてレジストパタ
ーン形成時の放電及び遮蔽膜パターニング時の冷却の両
方を実施した場合について説明したが、どちらか一方の
特性に優れる材料を用いて放電，冷却の一方のみを実施
してもよい。この場合、両方を実施した場合に比し、パ
ターン８の位置の精度は落ちるが、従来の製造方法を用
いる場合よりは、パターン８の位置ずれの度合は少なく
なる。Furthermore, in the above embodiment, tungsten 6, which has excellent thermal conductivity and electrical conductivity, is used to perform both discharge during resist pattern formation and cooling during shielding film patterning. Only one of discharge and cooling may be performed using a material with excellent properties. In this case, the accuracy of the position of the pattern 8 is lower than when both are performed, but the degree of positional deviation of the pattern 8 is smaller than when the conventional manufacturing method is used.
【００２１】[0021]
【発明の効果】以上のように請求項１に記載の露光用マ
スクの製造方法によれば、遮蔽膜を導電性の優れたもの
にし、遮蔽膜で基板を覆い、遮蔽膜に所定電位を与えつ
つ、遮蔽膜上にレジストパターンを形成するようにして
いるので、レジストパターンに蓄積された電荷は遮蔽膜
を介して放電され、レジストパターンがチャージアップ
されることがなく、レジストパターンの変形や位置ずれ
が生じることがない。その結果、該レジストパターンを
マスクとして遮蔽膜を精度良く所定のパターンにパター
ニングすることができるという効果がある。As described above, according to the method for manufacturing an exposure mask according to claim 1, the shielding film is made to have excellent conductivity, the substrate is covered with the shielding film, and a predetermined potential is applied to the shielding film. At the same time, since the resist pattern is formed on the shielding film, the charges accumulated in the resist pattern are discharged through the shielding film, and the resist pattern is not charged up, causing deformation and positioning of the resist pattern. No deviation occurs. As a result, the shielding film can be accurately patterned into a predetermined pattern using the resist pattern as a mask.
【００２２】また請求項２に記載の露出用マスクの製造
方法によれば、遮蔽膜を熱伝導性の優れたものとし、遮
蔽膜で基板を覆い、基板の裏面の遮蔽膜を介して冷却し
つつ、遮蔽膜を所定のパターンにパターニングするよう
にしたので、遮蔽膜のパターニング時に遮蔽膜の温度が
上昇しない。その結果、遮蔽膜に熱ひずみが生じること
がなく、遮蔽膜を精度良く所定の寸法にパターニングす
ることができるという効果がある。According to the method for manufacturing an exposure mask according to claim 2, the shielding film is made of a material having excellent thermal conductivity, the shielding film covers the substrate, and the substrate is cooled through the shielding film on the back side of the substrate. In addition, since the shielding film is patterned in a predetermined pattern, the temperature of the shielding film does not rise during patterning of the shielding film. As a result, there is an effect that no thermal strain occurs in the shielding film, and the shielding film can be accurately patterned to a predetermined size.
【図１】この発明に係わる露光用マスクの製造方法を説
明するための断面図である。FIG. 1 is a cross-sectional view for explaining a method of manufacturing an exposure mask according to the present invention.
【図２】この発明に係わる露光用マスクの製造方法を説
明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing an exposure mask according to the present invention.
【図３】この発明に係わる露光用マスクの製造方法を説
明するための断面図である。FIG. 3 is a cross-sectional view for explaining a method of manufacturing an exposure mask according to the present invention.
【図４】この発明に係わる露光用マスクの製造方法を説
明するための断面図である。FIG. 4 is a cross-sectional view for explaining a method of manufacturing an exposure mask according to the present invention.
【図５】この発明に係わる露光用マスクの製造方法を説
明するための断面図である。FIG. 5 is a cross-sectional view for explaining a method of manufacturing an exposure mask according to the present invention.
【図６】この発明に係わる露光用マスクの製造方法を説
明するための断面図である。FIG. 6 is a cross-sectional view for explaining a method of manufacturing an exposure mask according to the present invention.
【図７】この発明に係わる露光用マスクの製造方法を説
明するための断面図である。FIG. 7 is a cross-sectional view for explaining a method of manufacturing an exposure mask according to the present invention.
【図８】従来のＸ線露光用マスクの製造方法を説明する
ための断面図である。FIG. 8 is a cross-sectional view for explaining a conventional method of manufacturing an X-ray exposure mask.
【図９】従来のＸ線露光用マスクの製造方法を説明する
ための断面図である。FIG. 9 is a cross-sectional view for explaining a conventional method of manufacturing an X-ray exposure mask.
【図１０】従来のＸ線露光用マスクの製造方法を説明す
るための断面図である。FIG. 10 is a cross-sectional view for explaining a conventional method of manufacturing an X-ray exposure mask.
【図１１】従来のＸ線露光用マスクの製造方法を説明す
るための断面図である。FIG. 11 is a cross-sectional view for explaining a conventional method of manufacturing an X-ray exposure mask.
【図１２】従来のＸ線露光用マスクの製造方法を説明す
るための断面図である。FIG. 12 is a cross-sectional view for explaining a conventional method of manufacturing an X-ray exposure mask.
【図１３】従来のＸ線露光用マスクの製造方法を説明す
るための断面図である。FIG. 13 is a cross-sectional view for explaining a conventional method of manufacturing an X-ray exposure mask.
１ Ｓｉウエハ ６ タングステン ７ レジストパターン ８ パターン １０ 液体窒素 1 Si wafer 6 Tungsten 7 Resist pattern 8 Pattern 10 Liquid nitrogen
Claims (2)
記照射線を遮蔽する遮蔽膜を形成し、前記遮蔽膜上にレ
ジストパターンを形成し、前記レジストパターンをマス
クとして前記遮蔽膜を選択的にエッチングし、前記遮蔽
膜を所定のパターンに形成する露光用マスクの製造方法
において、前記遮蔽膜を導電性の優れたものにし、前記
遮蔽膜で前記基板を覆い、前記遮蔽膜に所定電位を与え
つつ、前記遮蔽膜上に前記レジストパターンを形成する
ことを特徴とする露光用マスクの製造方法。1. Forming a shielding film for blocking the radiation on a substrate through which exposure radiation passes, forming a resist pattern on the shielding film, and selecting the shielding film using the resist pattern as a mask. In the method of manufacturing an exposure mask, the shielding film is made to have excellent conductivity, the shielding film covers the substrate, and the shielding film is exposed to a predetermined potential. A method of manufacturing an exposure mask, characterized in that the resist pattern is formed on the shielding film while providing the following.
記照射線を遮蔽する遮蔽膜を形成した後、前記遮蔽膜を
所定のパターンにパターニングする露光用マスクの製造
方法において、前記遮蔽膜を熱伝導性の優れたものとし
、前記遮蔽膜で前記基板を覆い、前記基板の裏面の前記
遮蔽膜を介して冷却しつつ、前記遮蔽膜を所定のパター
ンにパターニングすることを特徴とする露光用マスクの
製造方法。2. A method for manufacturing an exposure mask, comprising: forming a shielding film that blocks the exposure radiation on a substrate that transmits the exposure radiation, and then patterning the shielding film into a predetermined pattern; is made of a material with excellent thermal conductivity, the substrate is covered with the shielding film, and the shielding film is patterned into a predetermined pattern while being cooled through the shielding film on the back surface of the substrate. Method of manufacturing masks for use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40313890A JP2557566B2 (en) | 1990-12-18 | 1990-12-18 | Method for manufacturing exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40313890A JP2557566B2 (en) | 1990-12-18 | 1990-12-18 | Method for manufacturing exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04216550A true JPH04216550A (en) | 1992-08-06 |
| JP2557566B2 JP2557566B2 (en) | 1996-11-27 |
Family
ID=18512897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40313890A Expired - Lifetime JP2557566B2 (en) | 1990-12-18 | 1990-12-18 | Method for manufacturing exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2557566B2 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57155539A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Mask |
| JPH01142636A (en) * | 1987-11-30 | 1989-06-05 | Hoya Corp | Exposing method and photomask blank used in this exposing method and holder for photomask blank |
| JPH021851A (en) * | 1988-06-09 | 1990-01-08 | Nec Corp | Mask blank for electron ray exposing |
| JPH0246724A (en) * | 1988-08-09 | 1990-02-16 | Fujitsu Ltd | Processing of metal thin film |
| JPH02151015A (en) * | 1988-12-01 | 1990-06-11 | Fujitsu Ltd | Manufacture of x-ray mask |
-
1990
- 1990-12-18 JP JP40313890A patent/JP2557566B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57155539A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Mask |
| JPH01142636A (en) * | 1987-11-30 | 1989-06-05 | Hoya Corp | Exposing method and photomask blank used in this exposing method and holder for photomask blank |
| JPH021851A (en) * | 1988-06-09 | 1990-01-08 | Nec Corp | Mask blank for electron ray exposing |
| JPH0246724A (en) * | 1988-08-09 | 1990-02-16 | Fujitsu Ltd | Processing of metal thin film |
| JPH02151015A (en) * | 1988-12-01 | 1990-06-11 | Fujitsu Ltd | Manufacture of x-ray mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2557566B2 (en) | 1996-11-27 |
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