JPH0420269B2 - - Google Patents
Info
- Publication number
- JPH0420269B2 JPH0420269B2 JP13426683A JP13426683A JPH0420269B2 JP H0420269 B2 JPH0420269 B2 JP H0420269B2 JP 13426683 A JP13426683 A JP 13426683A JP 13426683 A JP13426683 A JP 13426683A JP H0420269 B2 JPH0420269 B2 JP H0420269B2
- Authority
- JP
- Japan
- Prior art keywords
- strip
- present
- layer
- alloy
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002131 composite material Substances 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000011162 core material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
【発明の詳細な説明】
〔本発明の技術分野〕
本発明は、半導体素子に発生する熱を有効に放
熱しうる銅−低熱膨張係数型Fe系合金−銅の三
層複合条からなる半導体素子搭載用複合金属条に
関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention provides a semiconductor device comprising a three-layer composite strip of copper-low thermal expansion coefficient type Fe-based alloy-copper that can effectively dissipate heat generated in the semiconductor device. Concerning composite metal strips for mounting.
一般に、半導体素子は、ろう接又は、接着用ペ
ースト材により、基板材料に接着される。この
為、この基板材料に要求される特性は、半導体素
子である、SiやGaAsと熱膨張が一致することが
重要な因子であつたが、近年、素子の高密度化や
高電力化が進む中で素子に発生するジユール熱を
有効に除去する為の放熱特性（熱伝導特性）も又
非常に重要な因子となつでいる。
Generally, semiconductor devices are bonded to substrate materials by soldering or adhesive paste materials. For this reason, an important characteristic required for this substrate material was that its thermal expansion matched that of semiconductor elements such as Si and GaAs, but in recent years, the density and power of elements have increased. Heat dissipation characteristics (thermal conduction characteristics) for effectively removing Joule heat generated in the elements are also a very important factor.
この為、半導体素子が小型で、基板材料との熱
膨張係数の差により生じる応力が小さい場合に
は、基板材料としで銅又は銅合金が用いれること
が多くなつできたが半導体素子が大型化すると、
基板材料との熱膨張係数の差により生じる応力が
大きくなり、素子の剥離や破壊が生じることにな
る。そこで、熱膨張係数を半導体素子（Si：4.0
×10-6cm／cm・℃、GaAs×6.7×10-6cm／cm・
℃）に近似させ、なおかつ熱伝導体を向上させる
為に、コバール、42アロイ（42％Ni−Fe）など
の低熱膨張合金を中心材料としで、その両面に銅
を被覆した三層被合金属条が提案され一部で利用
されている。しかしながらこの金属条では、条の
平面方向の熱伝導率は、銅の被覆化率に応じて著
しく改善されるが、特に、熱放散性の点で重要な
条の板厚方向の熱伝導率は、余り改善されず、そ
の実用範囲が限定されていた。 For this reason, when the semiconductor element is small and the stress caused by the difference in thermal expansion coefficient with the substrate material is small, copper or copper alloy is often used as the substrate material, but semiconductor elements have become larger. Then,
The stress generated due to the difference in thermal expansion coefficient with the substrate material increases, resulting in peeling or destruction of the element. Therefore, we calculated the thermal expansion coefficient of the semiconductor element (Si: 4.0
×10 -6 cm/cm・℃, GaAs×6.7×10 -6 cm/cm・
℃), and in order to improve the thermal conductivity, a three-layer overlay metal is made of a low thermal expansion alloy such as Kovar and 42 alloy (42% Ni-Fe) and coated with copper on both sides. Articles have been proposed and are being used in some areas. However, with this metal strip, the thermal conductivity in the planar direction of the strip is significantly improved depending on the copper coating rate, but the thermal conductivity in the thickness direction of the strip, which is important from the point of view of heat dissipation, is particularly poor. However, there was not much improvement, and its practical range was limited.
本発明は、かかる複合条の欠点を改善する為に
なされたものである。すなわち、本発明の目的
は、半導体素子に発生する熱を有効に放熱しうる
銅−低熱膨張係数型Fe系合金−銅の三層複合系
からなる半導体素子搭載用複合金属系を提供する
にある。
The present invention has been made to improve the drawbacks of such composite strips. That is, an object of the present invention is to provide a composite metal system for mounting a semiconductor element comprising a three-layer composite system of copper, a low thermal expansion coefficient type Fe-based alloy, and copper, which can effectively dissipate heat generated in a semiconductor element. .
そして、本発明は上記目的を達成する手段とし
て、三層複合系の中心材料が複数の透孔を有する
点にある。すなわち、本発明は、熱膨張係数が、
4.0〜12.0×10-6cm／cm・℃であるFe系合金条の
両面に銅を被覆した三層複合条において、中心材
料が条表面積に対して10〜50％の複数の透孔を有
するFe系合金条であることを特徴とする、半導
体素子搭載用複合金属条である。
As a means for achieving the above object, the present invention resides in that the central material of the three-layer composite system has a plurality of through holes. That is, in the present invention, the coefficient of thermal expansion is
In a three-layer composite strip in which copper is coated on both sides of an Fe-based alloy strip with a temperature of 4.0 to 12.0 This is a composite metal strip for mounting semiconductor elements, which is characterized by being an Fe-based alloy strip.
本発明は、上記したように、三層複合条の中心
材料として用いるFe系合金条として複数の透孔
を有する条を用いることにより、複合条の板厚方
向の熱伝導特性を向上させ、半導体素子より生じ
るジユール熱の放散をスムーズに行わせることが
できるものである。中心条に透孔を設けると板厚
方向の熱抵抗が軽減される結果、全体としての熱
伝導度が向上する。 As described above, the present invention improves the thermal conductivity in the thickness direction of the composite strip by using a strip having a plurality of through holes as the Fe-based alloy strip used as the core material of the three-layer composite strip, and It is possible to smoothly dissipate the Joule heat generated by the element. Providing a through hole in the center strip reduces the thermal resistance in the plate thickness direction, improving the overall thermal conductivity.
本発明において、中心材料として用いるFe系
合金条（中心条）に設けた複数の透孔を、条の表
面積に対して、10〜50％としたのは、10％以下で
は、本発明の効果（放熱効果）が十分期待でき
ず、一方、５％を越えると基板の機械的性質が著
しく低下する為である。又、該複合条の製法とし
ては機械的圧接法溶融めつき法などが適当であ
る。 In the present invention, the plurality of through holes provided in the Fe-based alloy strip (center strip) used as the core material is set to 10 to 50% of the surface area of the strip. (heat dissipation effect) cannot be expected to be sufficient, and on the other hand, if it exceeds 5%, the mechanical properties of the substrate will deteriorate significantly. Also, suitable methods for manufacturing the composite strip include mechanical pressure welding, melt plating, and the like.
以下本発明を図面に基づいてより詳細に説明す
る。 The present invention will be explained in more detail below based on the drawings.
第１図は、従来用いられてきた、Cu−42アロ
イ−Cuの三層複合条の断面を示したもので、そ
の板厚方向の熱伝導率は、第３図に示した通り、
複合化の効果が十分と言えない。これに対して、
第２図は、本発明の実施例である複合条の断面を
示したもので、中心材である42アロイ３には、部
分的に透孔部４があり、この部分では、両面に存
在する、Cu層が、直接、接触しており、板厚方
向の熱伝導率改善に寄与している。第３図は熱間
圧接法により製造した本発明品の中心材である42
アロイ３に占める透孔部４の面積が20％の板厚方
向の熱伝導率を示したもので、所期の効果が確認
された。 Figure 1 shows a cross section of a conventionally used three-layer composite strip of Cu-42 alloy-Cu, and its thermal conductivity in the thickness direction is as shown in Figure 3.
The effect of compounding cannot be said to be sufficient. On the contrary,
FIG. 2 shows a cross section of a composite strip according to an embodiment of the present invention. The 42 alloy 3, which is the core material, partially has a through hole 4, and in this part, there are , the Cu layer is in direct contact and contributes to improving thermal conductivity in the thickness direction. Figure 3 shows the core material of the product of the present invention manufactured by hot pressure welding42
The area of the through holes 4 in the alloy 3 showed a thermal conductivity in the thickness direction of 20%, and the expected effect was confirmed.
本発明は、以上詳記したように、三層複合系の
中心条に複数の透孔を設けた構造からなるもので
あるから、この三層条の板厚方向の熱伝導率が向
上し、その結果、半導体素子より生ずるジユール
熱の放散がスムースに行わせることができる顕著
な効果を奏するものである。
As detailed above, the present invention has a structure in which a plurality of through holes are provided in the center strip of a three-layer composite system, so that the thermal conductivity of the three-layer strip in the thickness direction is improved. As a result, the remarkable effect of smoothly dissipating the Joule heat generated by the semiconductor element is achieved.
第１図は従来の三層複合条の断面図であり、第
２図は本発明の実施例である三層複合条の断面図
である。第３図は従来の三層複合条の熱伝導率及
び本発明の熱伝導率を示した図である。
１…Cu層、２…42アロイ（42％Ni−Fe）層、
３…透孔を有する42アロイ層、４…42アロイ層中
の透孔部。
FIG. 1 is a cross-sectional view of a conventional three-layer composite strip, and FIG. 2 is a cross-sectional view of a three-layer composite strip according to an embodiment of the present invention. FIG. 3 is a diagram showing the thermal conductivity of a conventional three-layer composite strip and the thermal conductivity of the present invention. 1...Cu layer, 2...42 alloy (42% Ni-Fe) layer,
3... 42 alloy layer having through holes, 4... Through holes in the 42 alloy layer.
Claims (1)
あるFe系合金条の両面に銅を被覆した三層複合
条においで、中心材料が条表面積に対しで10〜50
％の複数の透孔を有するFe系合金条であること
を特徴とする、半導体素子搭載用複合金属条。1 In a three-layer composite strip consisting of an Fe-based alloy strip with a thermal expansion coefficient of 4.0 to 12.0×10 -6 cm/cm・℃ coated with copper on both sides, the core material has a thermal expansion coefficient of 10 to 50% relative to the strip surface area.
A composite metal strip for mounting a semiconductor element, characterized in that it is an Fe-based alloy strip having a plurality of through holes of 1.5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13426683A JPS6027151A (en) | 1983-07-25 | 1983-07-25 | Composite metallic filament for mounting semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13426683A JPS6027151A (en) | 1983-07-25 | 1983-07-25 | Composite metallic filament for mounting semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6027151A JPS6027151A (en) | 1985-02-12 |
| JPH0420269B2 true JPH0420269B2 (en) | 1992-04-02 |
Family
ID=15124277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13426683A Granted JPS6027151A (en) | 1983-07-25 | 1983-07-25 | Composite metallic filament for mounting semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6027151A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4894293A (en) * | 1988-03-10 | 1990-01-16 | Texas Instruments Incorporated | Circuit system, a composite metal material for use therein, and a method for making the material |
| JPH0247054U (en) * | 1988-09-26 | 1990-03-30 | ||
| US5151777A (en) * | 1989-03-03 | 1992-09-29 | Delco Electronics Corporation | Interface device for thermally coupling an integrated circuit to a heat sink |
| DE69033226T2 (en) * | 1989-12-12 | 2000-02-17 | Sumitomo Spec Metals | Thermally conductive mixed material |
| JPH06188324A (en) * | 1992-12-16 | 1994-07-08 | Kyocera Corp | Semiconductor device |
-
1983
- 1983-07-25 JP JP13426683A patent/JPS6027151A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6027151A (en) | 1985-02-12 |
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