JPH0419797Y2 - - Google Patents
Info
- Publication number
- JPH0419797Y2 JPH0419797Y2 JP1985173609U JP17360985U JPH0419797Y2 JP H0419797 Y2 JPH0419797 Y2 JP H0419797Y2 JP 1985173609 U JP1985173609 U JP 1985173609U JP 17360985 U JP17360985 U JP 17360985U JP H0419797 Y2 JPH0419797 Y2 JP H0419797Y2
- Authority
- JP
- Japan
- Prior art keywords
- wire bonding
- wire
- angle
- bonding surface
- capillary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 13
- 238000002788 crimping Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85385—Shape, e.g. interlocking features
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案はワイヤボンデイングの高信頼性を実現
し得る構造の半導体装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device having a structure that can realize high reliability of wire bonding.
この考案は、チツプの基準面に対してワイヤボ
ンデイング面の角度がばらつきをもつて配される
半導体装置において、予めばらつきの角度だけワ
イヤボンデイング面のチツプ側を高くするように
傾けてキヤピラリーの先端部のチツプ側が常に接
触するようにすることにより、ボンデイング作業
の信頼性を向上させたものである。
In semiconductor devices where the angle of the wire bonding surface varies with respect to the reference plane of the chip, the tip of the capillary is tilted in advance so that the chip side of the wire bonding surface is raised by the angle of the variation. The reliability of bonding work is improved by ensuring that the chip side of the
一般に、半導体装置の組み立て工程において
は、チツプ上のボンデイングパツド部と外部リー
ド線の端子間を金等の金属細線によつて結線する
ワイヤボンデイング行われている。
Generally, in the assembly process of a semiconductor device, wire bonding is performed in which a thin metal wire such as gold is used to connect a bonding pad portion on a chip and a terminal of an external lead wire.
この半導体装置の組み立て工程におけるワイヤ
ボンデイングは、ワイヤを連続的に供給するキヤ
ピラリーが、例えばボンデイングパツド部から外
部リード線の端子に移動することによつて行われ
ている。 Wire bonding in the process of assembling semiconductor devices is performed by moving a capillary that continuously supplies wires, for example, from a bonding pad portion to a terminal of an external lead wire.
たとえば先ず、加熱溶融によつて球状になつた
ワイヤをキヤピラリーの先端部を押し当てること
によつてボンデイングパツド部の基準面に圧着す
る。次に、ワイヤを押し出しつつキヤピラリーの
先端部が移動して、該先端部が外部リード線のワ
イヤボンデイング面に当接する。このときワイヤ
が上記キヤピラリーの先端部によつて押しつけら
れて上記ワイヤボンデイング面に接続することに
なる。 For example, first, a wire made into a spherical shape by heating and melting is pressed against the reference surface of the bonding pad by pressing the tip of the capillary. Next, the tip of the capillary moves while pushing out the wire, and the tip comes into contact with the wire bonding surface of the external lead wire. At this time, the wire is pressed by the tip of the capillary and connected to the wire bonding surface.
上述のようなワイヤボンデイングを行う半導体
装置は、チツプのボンデイングパツド部の基準面
と外部リード線のワイヤボンデイング面が同一の
方向を有する面になるように形成されている。即
ち、キヤピラリーの上下方向の移動に対して垂直
な面となるように上記基準面と上記ワイヤボンデ
イング面は形成されている。
A semiconductor device that performs wire bonding as described above is formed so that the reference plane of the bonding pad portion of the chip and the wire bonding plane of the external lead wire are planes having the same direction. That is, the reference plane and the wire bonding plane are formed so as to be perpendicular to the vertical movement of the capillary.
然しながら、リード線の取り付け精度によつて
は、上記外部リード線のワイヤボンデイング面の
向きに誤差が生ずる。たとえば、第５図に示すよ
うに、チツプ５１のボンデイングパツド部の基準
面５２からの結線を行う場合において、ワイヤ５
３はキヤピラリーの先端部５４に引き出されて、
外部リード線のワイヤボンデイング部５５のワイ
ヤボンデイング面５６に接続されるが、このワイ
ヤボンデイング面５６が取り付け誤差を有して、
第５図に示すように上記基準面５２に対して角度
θeだけ傾斜をもつて取り付けられることがある。
そして、このようにワイヤボンデイング面５６が
角度θeだけ傾斜をもつて取り付けられた場合に
は、キヤピラリーの先端部５４が上記ワイヤボン
デイング面５６に当接せず、キヤピラリーの先端
部５４による切断ができなくなり、当該ワイヤボ
ンデイング面５６へのワイヤ５３の接続等が不能
になつたり、不良が生じたりする。 However, depending on the precision with which the lead wires are attached, an error may occur in the orientation of the wire bonding surface of the external lead wire. For example, as shown in FIG. 5, when connecting from the reference surface 52 of the bonding pad portion of the chip 51,
3 is pulled out to the tip 54 of the capillary,
The external lead wire is connected to the wire bonding surface 56 of the wire bonding part 55, but this wire bonding surface 56 has an installation error.
As shown in FIG. 5, it may be installed at an angle θ e with respect to the reference plane 52.
When the wire bonding surface 56 is attached with an inclination of the angle θ e in this way, the tip 54 of the capillary does not come into contact with the wire bonding surface 56, and the tip 54 of the capillary does not cut. As a result, it becomes impossible to connect the wire 53 to the wire bonding surface 56, or a defect occurs.
そこで、本考案は上述の問題点に鑑み、ワイヤ
ボンデイングの不良等の弊害を除去し、ボンデイ
ングの高信頼性を実現する半導体装置の開示を目
的とする。 Therefore, in view of the above-mentioned problems, the present invention aims to disclose a semiconductor device that eliminates disadvantages such as defective wire bonding and realizes high reliability of bonding.
本考案は、半導体チツプの基準面に対して所定
の角度のばらつきを有するリードのワイヤボンデ
イング面が、キヤピラリーの先端部のチツプ側が
該ワイヤボンデイング面と接触するように上記基
準面に対して上記ばらつきの角度以上の傾斜をも
つて配設されてなる半導体装置により上述の問題
点を解決する。
In the present invention, the wire bonding surface of the lead having a predetermined angle variation with respect to the reference surface of the semiconductor chip is arranged such that the chip side of the tip of the capillary contacts the wire bonding surface with respect to the reference surface. The above-mentioned problems are solved by a semiconductor device arranged with an angle greater than or equal to .
チツプの基準面に対して所定角度のばらつきを
有するリードのワイヤボンデイング面を、予めキ
ヤピラリー先端部のチツプ側が接触するような方
向に傾けておく。そして、この予め傾けておく角
度を上記ばらつきの角度以上の角度とすれば、確
実にばらつきを補償して、有効な結線が可能とな
る。
The wire bonding surface of the lead, which varies by a predetermined angle with respect to the reference plane of the chip, is tilted in advance in a direction such that the tip side of the capillary comes into contact with it. If the pre-tilted angle is greater than or equal to the angle of variation, the variation can be reliably compensated for and effective wiring connections can be made.
本考案の好適な実施例を図面を参照しながら説
明する。
A preferred embodiment of the present invention will be described with reference to the drawings.
本実施例の半導体装置は、当該半導体装置のチ
ツプのボンデイングパツド部の基準面とリードの
ワイヤボンデイング面をキヤピラリーを用いた結
線を行うに好適な半導体装置であり、予めばらつ
きの角度を補償する角度をもつて上記リードのワ
イヤボンデイング面が取り付けられているため、
確実な結線を行うことができる。 The semiconductor device of this example is a semiconductor device suitable for connecting the reference plane of the bonding pad portion of the chip of the semiconductor device and the wire bonding surface of the lead using a capillary. Because the wire bonding surface of the above lead is attached at an angle,
Allows for reliable wiring.
先ず、第１図に示すように、本実施例の半導体
装置は、レーザーダイオードの例であつて、半導
体チツプであるレーザーダイオードのチツプ１
は、基台４上に固定されている。このレーザーダ
イオードのチツプ１の基準面２には、ワイヤ３の
一端が加熱溶融から圧着されて圧着部５として接
続されている。ワイヤ３は、キヤピラリーの先端
部６の移動に伴つて配され、このキヤピラリーの
先端部６の圧着動作によつてリード線のワイヤボ
ンデイング部７のワイヤボンデイング面８に接続
されるような機構になつている。 First, as shown in FIG. 1, the semiconductor device of this embodiment is an example of a laser diode, and a laser diode chip 1 is a semiconductor chip.
is fixed on the base 4. One end of a wire 3 is crimped by heating and melting and connected to the reference surface 2 of the laser diode chip 1 as a crimping part 5. The wire 3 is arranged as the tip 6 of the capillary moves, and is connected to the wire bonding surface 8 of the wire bonding part 7 of the lead wire by the crimping operation of the tip 6 of the capillary. ing.
ここで、このようにキヤピラリーの先端部６の
圧着動作によつてワイヤ３が接続されるリード線
のワイヤボンデイング面８の角度について説明す
ると、このワイヤボンデイング面８の角度は、上
記チツプ１の基準面２から、当該チツプ１に近い
方の側が、上記キヤピラリーの位置に近くなるよ
うな傾斜をもつて形成されている。即ち、ワイヤ
ボンデイング面８は、キヤピラリーの先端部６を
当該ワイヤボンデイング面８に対して接近させて
いつた場合に、上記先端部６のチツプ側６ｃが最
初に接触するような方向に傾けられて配設されて
いる。このため、上記キヤピラリーの先端部６を
リード線のワイヤボンデイング面８に接触させた
場合には、ワイヤ３の切断とワイヤ３の該ワイヤ
ボンデイング面８への接続は確実に行われること
になる。 Here, the angle of the wire bonding surface 8 of the lead wire to which the wire 3 is connected by the crimping operation of the capillary tip 6 will be explained. It is formed with an inclination such that the side closer to the chip 1 from the surface 2 is closer to the position of the capillary. That is, the wire bonding surface 8 is inclined in such a direction that when the tip 6 of the capillary is brought closer to the wire bonding surface 8, the tip side 6c of the tip 6 comes into contact first. It is set up. Therefore, when the tip 6 of the capillary is brought into contact with the wire bonding surface 8 of the lead wire, the cutting of the wire 3 and the connection of the wire 3 to the wire bonding surface 8 are reliably performed.
そして、このようなワイヤ３が、上記キヤピラ
リーの圧着動作によつて固定されるワイヤボンデ
イング面８の角度は、取り付け誤差による角度の
ばらつきを補償するように、予めチツプ１の基準
面２に対してばらつき角度θeだけ傾斜をもつて取
り付けられている。即ち、ばらつきの角度θeだけ
上記ワイヤボンデイング面８のチツプ側８ｃが持
ち上がるような角度になつており、例えば、組み
立てにおいてばらつきが生じた場合であつても、
上記ワイヤボンデイング面８のチツプ側８ｃが持
ち上がるような角度が維持され、若しくは基準面
２とワイヤボンデイング面８が同一の方向をもつ
た面になる。従つて、ばらつきをもつて取り付け
られた場合でも、確実に上記リード線のワイヤボ
ンデイング面８と上記キヤピラリーの先端部６の
チツプ側６ｃが当接することになり、このため結
線の不良等を確実に除去することが可能となる。 The angle of the wire bonding surface 8 to which such a wire 3 is fixed by the crimping operation of the capillary is adjusted in advance with respect to the reference surface 2 of the chip 1 so as to compensate for variations in the angle due to installation errors. It is installed with an inclination of a variation angle θ e . That is, the angle is such that the chip side 8c of the wire bonding surface 8 is lifted by the variation angle θ e , so that even if variation occurs during assembly, for example,
An angle is maintained such that the chip side 8c of the wire bonding surface 8 is raised, or the reference surface 2 and the wire bonding surface 8 become surfaces having the same direction. Therefore, even if the lead wires are attached with unevenness, the wire bonding surface 8 of the lead wire and the tip side 6c of the tip 6 of the capillary will surely come into contact with each other, thereby ensuring that there will be no connection defects. It becomes possible to remove it.
尚、上記ワイヤボンデイング面８の角度は上記
ばらつきの角度θe以上の角度であれば良く、この
場合にも同様に、結線の不良等の弊害を除去し得
る。 The angle of the wire bonding surface 8 may be greater than or equal to the variation angle θ e , and in this case as well, problems such as connection defects can be eliminated.
このようなレーザーダイオードは、例えば、第
２図に示すような構造であつて、基台２４に取り
付けられたチツプ２１の基準面２２と、リード線
２５のワイヤボンデイング部２６のワイヤボンデ
イング面２７が、ワイヤ２３によつて結線されて
いる。上記リード線２５のワイヤボンデイング面
２７は、上述のようにばらつきの角度θeで、ワイ
ヤボンデイング面２７のチツプ側が、第２図中ｚ
方向で示すチツプ２１の基準面２２の法線方向に
持ち上げられたような角度で取り付けられてい
る。このため、確実にキヤピラリーの先端部のチ
ツプ側は、上記ワイヤボンデイング面２７と当接
し、その圧着動作によつてワイヤ２３は、当該ワ
イヤボンデイング面２７に接続されて、切断され
ることになる。 Such a laser diode has, for example, a structure as shown in FIG. , are connected by wires 23. The wire bonding surface 27 of the lead wire 25 has a variation angle θ e as described above, and the tip side of the wire bonding surface 27 has a variation angle θ e in FIG.
The chip 21 is mounted at an angle such that it is raised in the normal direction of the reference surface 22 of the chip 21 as shown in the direction. Therefore, the tip side of the tip of the capillary reliably comes into contact with the wire bonding surface 27, and the wire 23 is connected to the wire bonding surface 27 and cut by the crimping operation.
このような確実なボンデイングを可能とするワ
イヤボンデイング面２７を有してなる半導体装置
は、単一のワイヤボンデイング面２７を有するも
のに限定されず、例えば、第２図中、一点鎖線で
示すような他のワイヤボンデイング面２８を有す
る構造であつても良い。また、このようなワイヤ
ボンデイング面の数は、１つや２つに限定され
ず、更に複数のものであつても良く。更に、リー
ド線２５の取り付け方向等には限定されない。 A semiconductor device having a wire bonding surface 27 that enables such reliable bonding is not limited to one having a single wire bonding surface 27. A structure having another wire bonding surface 28 may also be used. Further, the number of such wire bonding surfaces is not limited to one or two, and may be more than one. Furthermore, the direction in which the lead wire 25 is attached is not limited.
また、このような接続不良等による弊害を防止
してキヤピラリーによるワイヤボンデイングの効
率を向上させた構造のレーザーダイオードは、確
実な結線によつて、作業を迅速に進めることがで
き、このため自動化に適した構造のレーザーダイ
オードとなつている。 In addition, laser diodes with a structure that prevents the harmful effects of such poor connections and improves the efficiency of wire bonding using capillaries can speed up work by ensuring reliable connections, and are therefore suitable for automation. It is a laser diode with a suitable structure.
ここで、このようなレーザーダイオードの構造
の一例を第３図及び第４図に示す。 Here, an example of the structure of such a laser diode is shown in FIGS. 3 and 4.
先ず、第３図に示すレーザーダイオードは、１
つの基台３１に取り付けられたチツプ３２の基準
面３２ａと、１つのリード線３３のワイヤボンデ
イング面３３ａを結線する構造のレーザーダイオ
ードである。この場合において、上記ワイヤボン
デイング面３３ａの取り付け角度θe1は、ばらつ
きの角度を補償するような角度であり、この角度
θe1は2.5度になつている。即ち、角度θe1以内のば
らつきが生じた場合には、確実な結線が可能であ
つて、ワイヤの接続不良等の問題は生じない。 First, the laser diode shown in FIG.
This laser diode has a structure in which a reference surface 32a of a chip 32 mounted on two bases 31 and a wire bonding surface 33a of one lead wire 33 are connected. In this case, the attachment angle θ e1 of the wire bonding surface 33a is an angle that compensates for angle variations, and this angle θ e1 is 2.5 degrees. That is, if a variation within the angle θ e1 occurs, reliable connection is possible and problems such as poor wire connection do not occur.
また、第４図に示すレーザーダイオードは、１
つの基台４１に取り付けられたチツプ４２の基準
面４２ａと、２つのリード線４３，４４の２つの
ワイヤボンデイング面４３ａ，４４ａを結線する
構造のレーザーダイオードである。この場合にお
いて、上記２つのリード線４３，４４は、断面略
ハ字状になるように取り付けられ、それぞればら
つきの角度を補償するような構造になつている。
上記ワイヤボンデイング３４ａの基準面４２ａに
対する角度は、θe2であり、また、上記ワイヤボ
ンデイング４４ａの基準面４２ａに対する角度
は、角度θe3であつて、例えば、これら角度θe2及
び角度θe3は2.5度程度にそれぞれ設定されて配設
されている。このため、これら角度θe2及び角度
θe3以内のばらつきが生じた場合であつても、確
実にばらつきを補償して確実なボンデイングを実
現することができる。 Moreover, the laser diode shown in FIG.
This laser diode has a structure in which a reference surface 42a of a chip 42 mounted on one base 41 and two wire bonding surfaces 43a and 44a of two lead wires 43 and 44 are connected. In this case, the two lead wires 43 and 44 are attached so as to have a substantially V-shaped cross section, and are structured to compensate for angle variations.
The angle of the wire bonding 34a with respect to the reference plane 42a is θ e2 , and the angle of the wire bonding 44a with respect to the reference plane 42a is the angle θ e3 . For example, these angles θ e2 and θ e3 are 2.5 They are set and arranged to each degree. Therefore, even if variations occur within these angles θ e2 and θ e3 , it is possible to reliably compensate for the variations and achieve reliable bonding.
尚、上述の実施例において、半導体装置として
レーザーダイオードについて説明したが、これに
限定されず、他の半導体装置等においても適用す
ることができる。 In the above embodiments, a laser diode has been described as a semiconductor device, but the present invention is not limited to this and can be applied to other semiconductor devices.
本考案の半導体装置は、そのワイヤボンデイン
グ面が、キヤピラリーの先端部のチツプ側が該ワ
イヤボンデイング面と接触するように傾斜をもつ
て配設され、更に、チツプの基準面に対して予め
ばらつきを補償するような角度をもつて形成され
ているため、ボンデイングの不良や不能などの弊
害を有効に防止し、且つ確実な結線を実現するこ
とができる。
In the semiconductor device of the present invention, the wire bonding surface is inclined so that the chip side of the tip of the capillary comes into contact with the wire bonding surface, and further, variations are compensated for in advance with respect to the reference surface of the chip. Since the wires are formed at such an angle, it is possible to effectively prevent problems such as defective bonding or failure of bonding, and to realize reliable connection.
第１図は本考案の半導体装置の要部拡大断面
図、第２図は本考案の半導体装置の一例を示す斜
視図、第３図及び第４図は本考案の半導体装置に
かかるワイヤボンデイング面と基準面の関係を示
すそれぞれ模式図、第５図は従来の半導体装置を
示す要部拡大断面図である。
１……チツプ、２……基準面、３……ワイヤ、
４……基台、６……キヤピラリーの先端部、６ｃ
……キヤピラリーの先端部のチツプ側、７……ワ
イヤボンデイング部、８……ワイヤボンデイング
面、８ｃ……ワイヤボンデイング面のチツプ側。
FIG. 1 is an enlarged cross-sectional view of essential parts of the semiconductor device of the present invention, FIG. 2 is a perspective view showing an example of the semiconductor device of the present invention, and FIGS. 3 and 4 are wire bonding surfaces of the semiconductor device of the present invention. FIG. 5 is an enlarged sectional view of a main part of a conventional semiconductor device. 1... Chip, 2... Reference plane, 3... Wire,
4...Base, 6...Capillary tip, 6c
...Tip side of the tip of the capillary, 7...Wire bonding part, 8...Wire bonding surface, 8c... Chip side of the wire bonding surface.
Claims (1)
つきを有するリードのワイヤボンデイング面が、
キヤピラリーの先端部のチツプ側が該ワイヤボン
デイング面と接触するように上記基準面に対して
上記ばらつきの角度以上の傾斜をもつて配設され
てなる半導体装置。 The wire bonding surface of the lead, which has a predetermined angle variation with respect to the reference plane of the semiconductor chip,
A semiconductor device, wherein a tip side of a capillary is disposed at an angle greater than the variation angle with respect to the reference plane so that the tip side of the capillary comes into contact with the wire bonding surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985173609U JPH0419797Y2 (en) | 1985-11-13 | 1985-11-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985173609U JPH0419797Y2 (en) | 1985-11-13 | 1985-11-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6282734U JPS6282734U (en) | 1987-05-27 |
| JPH0419797Y2 true JPH0419797Y2 (en) | 1992-05-06 |
Family
ID=31111228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985173609U Expired JPH0419797Y2 (en) | 1985-11-13 | 1985-11-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0419797Y2 (en) |
-
1985
- 1985-11-13 JP JP1985173609U patent/JPH0419797Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6282734U (en) | 1987-05-27 |
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