JPH04192504A - Manufacture of hybrid ic and resistor - Google Patents
Manufacture of hybrid ic and resistorInfo
- Publication number
- JPH04192504A JPH04192504A JP2325020A JP32502090A JPH04192504A JP H04192504 A JPH04192504 A JP H04192504A JP 2325020 A JP2325020 A JP 2325020A JP 32502090 A JP32502090 A JP 32502090A JP H04192504 A JPH04192504 A JP H04192504A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistance value
- conductor pattern
- substrate
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000004020 conductor Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
基板上に厚膜抵抗か形成されてなる混成集積回路、特に
抵抗値の低い抵抗の形成方法と抵抗値調整方法に関し、
通常のペースト状抵抗材料を用いて抵抗値の低い抵抗か
得られ、抵抗値の微調整が容易な抵抗形成方法の提供を
目的とし、
基板に設けられた貫通孔にペースト状抵抗材料を充填し
て抵抗体を形成した後、抵抗体の両面に導体パターンを
形成する抵抗形成方法によって、少なくとも基板に設け
られた貫通孔に充填されてなる抵抗体と、抵抗体の両面
に設けられてなる導体パターンを有する混成集積回路を
構成し、前記導体パターンを櫛歯状パターンで形成し櫛
歯を切断して抵抗値を調整するように構成する。[Detailed Description of the Invention] [Summary] This invention relates to a hybrid integrated circuit in which a thick film resistor is formed on a substrate, particularly a method for forming a resistor with a low resistance value and a method for adjusting the resistance value, using an ordinary paste-like resistor material. The purpose of this invention is to provide a resistor formation method that allows a resistor with a low resistance value to be obtained and that allows for easy fine adjustment of the resistance value. A hybrid integrated circuit having at least a resistor filled in a through hole provided in a substrate and a conductor pattern provided on both sides of the resistor is constructed by a resistor forming method in which conductor patterns are formed on both sides of the resistor. The conductor pattern is formed in a comb-like pattern, and the resistance value is adjusted by cutting the comb-like patterns.
本発明は基板上に厚膜抵抗か形成されてなる混成集積回
路に係り、特に抵抗値の低い抵抗の形成方法と抵抗値調
整方法に関する。The present invention relates to a hybrid integrated circuit in which a thick film resistor is formed on a substrate, and more particularly to a method for forming a resistor with a low resistance value and a method for adjusting the resistance value.
混成集積回路において基板上に抵抗値の低い厚膜抵抗を
形成しようとすると、通常のペースト状抵抗材料では抵
抗体の長さに比へ幅か極端に大きく形成不能になる場合
かある。シート抵抗値の低いペースト状抵抗材料を用い
るとかかる抵抗を形成できるか、他の抵抗を形成すると
きと抵抗材料を使い分けなけれはならないという煩雑さ
かある。When attempting to form a thick film resistor with a low resistance value on a substrate in a hybrid integrated circuit, the width of the resistor may become extremely large compared to the length of the resistor, making it impossible to form the resistor using ordinary paste-like resistor materials. If a pasty resistance material with a low sheet resistance value is used, it may be possible to form such a resistance, or it may be complicated to use a different resistance material when forming other resistances.
そこで通常のペースト状抵抗材料を用いて抵抗値の低い
抵抗か得られ、抵抗値の微調整が容易な抵抗形成方法の
確立か要望されている。Therefore, there is a need to establish a resistor formation method that allows a resistor with a low resistance value to be obtained using an ordinary paste-like resistor material and that allows fine adjustment of the resistance value.
第2図は混成集積回路の一例を示す回路図、第3図は従
来の抵抗形成方法を示す平面図である。FIG. 2 is a circuit diagram showing an example of a hybrid integrated circuit, and FIG. 3 is a plan view showing a conventional method of forming a resistor.
例えば第2図に示す数アンペアの電流iを電圧に変換す
る混成集積回路では、半導体集積回路1の入力側に接続
されている抵抗Raの抵抗値が大きいと、抵抗Raにお
いて熱に変わり消費される電力か大きくなると共に、抵
抗Raの両端における電位差か大きくなりすぎるという
問題かある。そこでかかる回路における抵抗Raの抵抗
値は0.2Ω程度であることか要求される。For example, in a hybrid integrated circuit that converts a current i of several amperes into voltage as shown in FIG. There is a problem in that as the electric power increases, the potential difference between both ends of the resistor Ra becomes too large. Therefore, the resistance value of the resistor Ra in such a circuit is required to be approximately 0.2Ω.
従来の抵抗形成方法は第3図に示す如く基板上に形成さ
れた導体パターン2の上に、ペースト状抵抗材料を印刷
し焼成することによって平面状の抵抗体3か形成される
。ガラスの粉末と酸化ルテニウム等からなる抵抗材料の
特性は通常シート抵抗、即ち、20μm程度の厚さに形
成された抵抗体の幅と長さが等しいときの抵抗値で表さ
れる。In the conventional resistor forming method, as shown in FIG. 3, a planar resistor 3 is formed by printing and baking a paste-like resistor material on a conductor pattern 2 formed on a substrate. The characteristics of a resistive material made of glass powder, ruthenium oxide, etc. are usually expressed as sheet resistance, that is, a resistance value when the width and length of a resistor formed to a thickness of about 20 μm are equal.
前記抵抗体3の幅をW、長さをし、厚さをt、抵抗材料
のシート抵抗をRsとすると、抵抗値Rはとなる。例え
ばシート抵抗Rsか300Ωの抵抗材料で厚さtか20
μmの抵抗体を形成すると、前記の0.2Ω程度の抵抗
における長さしと幅Wの比は、L/W= 0.2/ 3
00= 1 /1500即ち、長さしを1mmとしても
幅Wか1.5メートルにも成りこのような抵抗体は形成
できない。Assuming that the width of the resistor 3 is W, the length is W, the thickness is t, and the sheet resistance of the resistive material is Rs, the resistance value R is as follows. For example, sheet resistance Rs or 300Ω resistance material with thickness t or 20
When forming a resistor of μm, the ratio of length to width W for the above-mentioned resistor of about 0.2Ω is L/W=0.2/3
00=1/1500 That is, even if the length is 1 mm, the width W will be 1.5 meters, and such a resistor cannot be formed.
なお、シート抵抗RsかlOΩの抵抗材料を用いて厚さ
tか20μmの抵抗体を形成すると、L/W= 0.2
/IQ= 1150
即ち、長さLを1mmとすると幅Wか50mmになり形
成可能であるか、抵抗材料を他の抵抗を形成するための
抵抗材料と使い分けなければならない。また幅Wか大き
くなると抵抗体3に接続されている導体パターン2の抵
抗か無視できなくなる。導体パターンの抵抗は通常20
00ppm/’C程度の温度係数を有し、かかる導体パ
ターンの温度係数によって抵抗体3の抵抗値か変動する
。If a resistor with a thickness of t or 20 μm is formed using a resistive material with a sheet resistance of Rs or 10Ω, L/W = 0.2.
/IQ=1150 That is, if the length L is 1 mm, the width W must be 50 mm, so it is possible to form the resistor material or the resistor material must be used separately from the resistor material for forming other resistors. Furthermore, as the width W increases, the resistance of the conductor pattern 2 connected to the resistor 3 cannot be ignored. The resistance of the conductor pattern is usually 20
It has a temperature coefficient of about 00 ppm/'C, and the resistance value of the resistor 3 varies depending on the temperature coefficient of the conductor pattern.
上述の如く混成集積回路において抵抗値の低い抵抗の形
成か要望されているにもかかわらず、従来の抵抗形成方
法では抵抗値の低い抵抗を形成できないという問題かあ
った。As mentioned above, although there is a desire to form a resistor with a low resistance value in a hybrid integrated circuit, there is a problem in that it is not possible to form a resistor with a low resistance value using conventional resistor forming methods.
本発明の目的は通常のペースト状抵抗材料を用いて抵抗
値の低い抵抗が得られ、抵抗値の微調整が容易な抵抗形
成方法を提供することにある。An object of the present invention is to provide a resistor forming method that allows a resistor with a low resistance value to be obtained using a normal paste-like resistor material and allows fine adjustment of the resistance value.
第1図は本発明になる混成集積回路を示す側断面図およ
び平面図である。なお全図を通し同じ対象物は同一記号
で表している。FIG. 1 is a side sectional view and a plan view showing a hybrid integrated circuit according to the present invention. The same objects are represented by the same symbols throughout the figures.
上記課題は少なくとも基板4に設けられた貫通孔41に
充填されてなる抵抗体5と、抵抗体5の両面に設けられ
てなる導体パターン6を有する本発明の混成集積回路。The above problem is solved by the hybrid integrated circuit of the present invention, which has at least a resistor 5 filled in a through hole 41 provided in a substrate 4, and a conductor pattern 6 provided on both sides of the resistor 5.
および基板4に設けられた貫通孔41にペースト状抵抗
材料を充填して抵抗体5を形成した後、抵抗体5の両面
に導体パターン6を形成する本発明の抵抗形成方法。お
よび前記導体パターン6か櫛歯状パターンで構成され、
櫛歯61を切断して抵抗値を調整する本発明の抵抗形成
方法によって達成される。and a resistor forming method of the present invention, in which a through hole 41 provided in a substrate 4 is filled with a paste resistive material to form a resistor 5, and then conductor patterns 6 are formed on both sides of the resistor 5. and the conductor pattern 6 is composed of a comb-like pattern,
This is achieved by the resistance forming method of the present invention, which adjusts the resistance value by cutting the comb teeth 61.
第1図において少なくとも基板に設けられた貫通孔に充
填されてなる抵抗体と、抵抗体の両面に設けられてなる
導体パターンを有する本発明の混成集積回路は、抵抗体
と抵抗体の両面に設けられてなる導体パターンとて抵抗
か形成され、貫通孔に充填された抵抗体の幅をW、長さ
をし、厚さをtとすると、抵抗値Rは
となり、シート抵抗Rsの基準となる膜厚20μmに比
へて抵抗体の長さしか極めて大きくなるため、厚さtと
抵抗体の幅Wの比か小さくなって抵抗値の低い抵抗の形
成が容易になる。In FIG. 1, the hybrid integrated circuit of the present invention has a resistor filled in at least a through hole provided in a substrate, and a conductor pattern provided on both sides of the resistor. If the width of the resistor filled in the through hole is W, the length is W, and the thickness is t, then the resistance value R is as follows, which is the standard for the sheet resistance Rs. Since only the length of the resistor becomes extremely large compared to the film thickness of 20 μm, the ratio between the thickness t and the width W of the resistor becomes small, making it easy to form a resistor with a low resistance value.
また櫛歯状パターンを組合せて前記導体パターンを構成
してなる本発明の抵抗形成方法は、複数の抵抗を導体パ
ターンで並列接続したものと同等てあり、レーザ光等て
櫛歯を切断することにより容易に抵抗値を微調整できる
。Further, the resistor forming method of the present invention in which the conductor pattern is formed by combining comb-teeth patterns is equivalent to connecting a plurality of resistors in parallel with conductor patterns, and the comb-teeth can be cut with a laser beam or the like. This allows you to easily fine-tune the resistance value.
即ち、通常のペースト状抵抗材料を用いて抵抗値の低い
抵抗が得られ、抵抗値の微調整か容易な抵抗形成方法を
実現することができる。That is, a resistor with a low resistance value can be obtained using a normal paste-like resistor material, and a resistor formation method that allows fine adjustment of the resistance value can be realized.
以下第1図により本発明の実施例について詳細に説明す
る。Embodiments of the present invention will be described in detail below with reference to FIG.
本発明になる混成集積回路は第1図(a)に示す如(基
板4に貫通孔41か設けられ、ペースト状抵抗材料を注
入し焼成することによって貫通孔旧に抵抗体5か充填さ
れている。かかる抵抗体5を形成した後その両面に導体
パターン6か設けられており、導体パターン6は第1図
(b)に示す如く櫛歯状パターンで構成されている。The hybrid integrated circuit according to the present invention is constructed as shown in FIG. After forming the resistor 5, a conductor pattern 6 is provided on both surfaces thereof, and the conductor pattern 6 is composed of a comb-like pattern as shown in FIG. 1(b).
抵抗体5とその両面に形成された導体パターン6からな
る抵抗の抵抗値は、前述の如くであり、抵抗体5の厚さ
tを1mm、抵抗材料のシート抵抗Rsを300Ωとす
ると、0.2Ω程度の抵抗における抵抗体の長さLと幅
Wの大きさは、WL=1000x20x 300/ 0
.2=30X10’μm2= 30mm2
即ち、抵抗体の幅Wを6mmとすると長さしか5mmに
なり抵抗値の低い抵抗を容易に形成できる。The resistance value of the resistor consisting of the resistor 5 and the conductor patterns 6 formed on both sides thereof is as described above, and when the thickness t of the resistor 5 is 1 mm and the sheet resistance Rs of the resistor material is 300Ω, the resistance value is 0. The length L and width W of the resistor for a resistance of about 2Ω are WL=1000x20x 300/0
.. 2=30X10'μm2=30mm2 That is, if the width W of the resistor is 6 mm, the length is only 5 mm, making it possible to easily form a resistor with a low resistance value.
かかる抵抗の形成方法において抵抗体の長さしと幅Wは
、基板4に設けられた貫通孔41て決まりその精度は高
くない。したかって抵抗を形成した後で抵抗値の微調整
を行う必要かある。In this method of forming a resistor, the length and width W of the resistor are determined by the through hole 41 provided in the substrate 4, and the precision thereof is not high. Is it necessary to fine-tune the resistance value after forming the resistor?
抵抗体5とその両面に形成された導体パターン6からな
る抵抗は、複数の抵抗を導体パターンで並列接続したも
のと同等であり、例えば長方形状の導体パターンを抵抗
体5の両面に形成し、レーザ光等で導体パターンを切り
取り抵抗値を微調整することは可能である。しかし、レ
ーザ光等を利用して抵抗体上の導体パターンを切り取る
と抵抗体まで破壊される。A resistor consisting of a resistor 5 and a conductor pattern 6 formed on both sides of the resistor is equivalent to a plurality of resistors connected in parallel with conductor patterns. For example, a rectangular conductor pattern is formed on both sides of the resistor 5, It is possible to finely adjust the resistance value by cutting out the conductor pattern using a laser beam or the like. However, if the conductor pattern on the resistor is cut out using a laser beam or the like, even the resistor will be destroyed.
そこで本発明になる混成集積回路は第1図(blに示す
如く抵抗体5の両面に、2個の櫛歯状パターンを組み合
わせてなる導体パターン6を形成している。櫛歯状パタ
ーンを構成する櫛歯61の根元はセラミック等からなる
基板4の上にあり、レーザ光等を利用して櫛歯6Iの根
元を切り取ることによって、抵抗体5を破壊することな
く容易に導体パターンを切り取ることかできる。Therefore, in the hybrid integrated circuit according to the present invention, as shown in FIG. The roots of the comb teeth 61 are on the substrate 4 made of ceramic or the like, and by cutting off the roots of the comb teeth 6I using a laser beam or the like, the conductor pattern can be easily cut out without destroying the resistor 5. I can do it.
このように少なくとも基板に設けられた貫通孔に充填さ
れてなる抵抗体と、抵抗体の両面に設けられてなる導体
パターンを有する本発明の混成集積回路は、シート抵抗
の基準となる膜厚に比へて抵抗体の長さか極めて大きく
なるため、厚さと抵抗体の幅の比か小さくなって抵抗値
の低い抵抗の形成か容易になる。In this way, the hybrid integrated circuit of the present invention having at least a resistor filled in a through hole provided in a substrate and a conductor pattern provided on both sides of the resistor has a film thickness that is a standard for sheet resistance. In comparison, the length of the resistor becomes extremely large, so the ratio between the thickness and the width of the resistor becomes small, making it easier to form a resistor with a low resistance value.
また櫛歯状パターンを組合せて前記導体パターンを構成
してなる本発明の抵抗形成方法は、複数の抵抗を導体パ
ターンで並列接続したものと同等であり、レーザ光等て
櫛歯を切断することにより容易に抵抗値を微調整できる
。即ち、通常のペースト状抵抗材料を用いて抵抗値の低
い抵抗か得られ、抵抗値の微調整か容易な抵抗形成方法
を実現することかできる。Further, the resistor forming method of the present invention in which the conductor pattern is formed by combining comb-teeth patterns is equivalent to connecting a plurality of resistors in parallel with conductor patterns, and the comb-teeth can be cut with a laser beam or the like. This allows you to easily fine-tune the resistance value. That is, a resistor with a low resistance value can be obtained using a normal paste-like resistor material, and a resistor formation method that is easy to finely adjust the resistance value can be realized.
上述の如く本発明によれば通常のペースト状抵抗材料を
用いて抵抗値の低い抵抗か得られ、抵抗値の微調整が容
易な抵抗形成方法を提供することかできる。As described above, according to the present invention, a resistor having a low resistance value can be obtained using a normal paste-like resistor material, and a resistor forming method can be provided in which the resistance value can be easily finely adjusted.
第1図は本発明になる混成集積回路を示す側断面図およ
び平面図、
第2図は混成集積回路の一例を示す回路図、第3図は従
来の抵抗形成方法を示す平面図、である。図において
4は基板、 5は抵抗体、
6は導体パターン、 41は貫通孔、
61は櫛歯、
をそれぞれ表す。
(,4)
、A−AWT面
(I))
、ネ、全日月になづ」シを語#口路ゑ示すイ則順面図為
よひ゛二円i図第 1 図FIG. 1 is a side sectional view and a plan view showing a hybrid integrated circuit according to the present invention, FIG. 2 is a circuit diagram showing an example of the hybrid integrated circuit, and FIG. 3 is a plan view showing a conventional method for forming a resistor. . In the figure, 4 represents a substrate, 5 a resistor, 6 a conductor pattern, 41 a through hole, and 61 a comb tooth. (, 4) , A-AWT plane (I)) , A-law order plane diagram showing the word #gut route for the whole moon (I) Figure 1
Claims (1)
に充填されてなる抵抗体(5)と、該抵抗体(5)の両
面に設けられてなる導体パターン(6)を有することを
特徴とする混成集積回路。 2)基板(4)に設けられた貫通孔(41)にペースト
状抵抗材料を充填して抵抗体(5)を形成した後、該抵
抗体(5)の両面に導体パターン(6)を形成すること
を特徴とした抵抗形成方法。 3)請求項1または2記載の導体パターン(6)が櫛歯
状パターンで構成され、櫛歯(61)を切断して抵抗値
を調整することを特徴とした抵抗形成方法。[Claims] 1) A through hole (41) provided in at least the substrate (4)
1. A hybrid integrated circuit comprising a resistor (5) filled with a resistor (5) and a conductor pattern (6) provided on both sides of the resistor (5). 2) After filling the through hole (41) provided in the substrate (4) with a paste-like resistance material to form a resistor (5), conductor patterns (6) are formed on both sides of the resistor (5). A resistance forming method characterized by: 3) A method for forming a resistor, characterized in that the conductor pattern (6) according to claim 1 or 2 is constituted by a comb-like pattern, and the resistance value is adjusted by cutting the comb-teeth (61).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2325020A JPH04192504A (en) | 1990-11-27 | 1990-11-27 | Manufacture of hybrid ic and resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2325020A JPH04192504A (en) | 1990-11-27 | 1990-11-27 | Manufacture of hybrid ic and resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04192504A true JPH04192504A (en) | 1992-07-10 |
Family
ID=18172245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2325020A Pending JPH04192504A (en) | 1990-11-27 | 1990-11-27 | Manufacture of hybrid ic and resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04192504A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013211435A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Film type thermistor sensor |
-
1990
- 1990-11-27 JP JP2325020A patent/JPH04192504A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013211435A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Film type thermistor sensor |
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