JPH04188841A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the generation of a leakage due to the contact of a lead with a semiconductor substrate as well as to prevent the generation of the deterioration of a semiconductor device due to the moisture adsorption of a resin and to improve the moisture resistance of the device by a method wherein independent floating conductors are provided on the semiconductor substrate to oppose to the lead-out part of the lead. CONSTITUTION:A signal or a power supply is connected to an input/output aluminium electrode 5 via an aluminium wiring 10 on a semiconductor substrate and is inputted/outputted into/from the outside through a rodlike lead 11 via a conductive projected matter 4. A polysilicon layer or an aluminium layer 9 is formed between electrodes on adjacent chips at the time of the state of a wafer in such a way as to oppose to a lead-out part of this lead 11 and when this layer 9 is cut in each chip, the layer 9 is turned into conductors in a floating state. Accordingly, an electric field is not applied between the lead and the semiconductor substrate and it is eliminated that a semiconductor device or the lead is deteriorated. Thereby, the device, which is superior in moisture resistance and is capable of using a high voltage, can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a chip edge semiconductor substrate having electrodes of a semiconductor device.

[Prior Art] In conventional semiconductor devices, as shown in FIGS. 2A and 2B, signals or potentials are drawn out from input/output electrodes by conductors (hereinafter referred to as leads). The structure was such that the body and the semiconductor substrate faced each other through an oxide film and resin on the semiconductor.

[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, if the lead is bent due to various reasons such as mounting errors or usage conditions,
As shown in FIG. 2A, leakage may occur when the leads come into contact with the semiconductor substrate exposed by etching.

Furthermore, when an electric field is applied between the semiconductor substrate and the leads, if moisture is contained in the resin, the conductive substance in the resin will move due to the electric field, degrading the semiconductor substrate or leads over time and damaging the semiconductor device. This has the problem of significantly lowering reliability.

Therefore, the present invention aims to solve these problems.
The purpose is to prevent leakage due to contact between the leads and the semiconductor substrate, and to provide a semiconductor device that does not deteriorate due to changes over time.

[Means for Solving the Problems] The semiconductor device of the present invention has a plurality of signal or power input/output electrodes, and inputs/outputs potentials or signals to the outside from the electrodes using a wire, rod-shaped, or thin film-shaped conductor. The semiconductor device is characterized in that a floating conductor is provided on the semiconductor substrate facing the lead-out portion of the conductor in the shape of a wire, rod, or thin film.

[Embodiment] FIGS. 1A and 1B show an embodiment of a semiconductor device showing the structure of the present invention. FIG. 1A is a cross-sectional view of the chip, and FIG. 1B is a view of the chip viewed from the surface.

Signals in the semiconductor substrate and 1! The l source is connected to the input/output aluminum electrode 5 via the aluminum arrangement s10 on the semiconductor, and further connected to the bar-shaped lead 11 via the conductive protrusion 4 formed on the input/output aluminum electrode, and is connected to the external signal. Or input/output the potential. A Po1y-Si layer or an aluminum layer is formed between the electrodes of chips that are adjacent to each other when they are in a wafer state, facing the lead-out portion of the lead 11, and when this is cut into chips, as shown in FIG. 1A and FIG. It will be in a state like B. This means that there is a floating conductor on the oxidized M8 that is not connected to any wiring or substrate. If there is no Po1y-5i or aluminum layer, as shown in Figure 2A, only the chip edge is etched to remove the oxide 1[8 and the substrate is exposed, so when the lead 11 comes into contact with the substrate, the substrate and the lead Leakage occurs not only between terminals but also between other terminals. However, according to the present invention, since the Po1y-3i or aluminum layers are independent floating conductors, the substrate is not exposed even when etched, so that leakage due to lead contact cannot occur. POLY
The -5i or aluminum floating conductor is not connected to any wiring or board, so there is no problem even if it is exposed.

Furthermore, when resin is poured onto the semiconductor substrate to fix the lead 11 and the semiconductor substrate is sealed, if the semiconductor substrate is of P type, the semiconductor substrate always has the lowest voltage, and even if a high voltage is applied to the input/output electrodes, the semiconductor substrate will always be at the lowest voltage. - An electric field is generated between the node 11 and the semiconductor substrate. Resin is unstable compared to the insulating layer on the semiconductor substrate, so if the resin contains moisture, the electric field will move the conductive particles in the resin, and if the insulating layer has even a little conductivity, a lit current will flow. If this continues for a long time, the leads or the semiconductor device itself will deteriorate. FIG. 3 shows an equivalent circuit in this state. Reference numeral 12 indicates a potential on the substrate side, 13 indicates a potential on the lead side, and 14 indicates a resin resistor R115 indicating a capacitance C1 between the lead and the semiconductor substrate. When an electric field is applied and the conductive particles move, this means that a current flows through the resistor R. In other words, a leak will occur. This is N
The same applies to type semiconductor substrates.

By forming the floating conductor 9 of Poly-3i or aluminum as shown in FIGS. 1A and 1B, an electric field is not applied between the lead and the semiconductor substrate, thereby preventing deterioration of the semiconductor device or the lead. An equivalent circuit showing this state is shown in FIG. This further shows the capacitance C2: 1 in Figure 3.
6, and even if the resin between the lead and the semiconductor substrate exhibits conductivity, no current will flow.

FIG. 5 shows another embodiment of the present invention in which protrusions are formed on the leads 17.

FIG. 6 shows a circuit board 1 on which conductive thin film wiring 19 is formed.
This is an embodiment of the present invention in which a signal or a potential is extracted to the outside by mounting the semiconductor device 1 on the semiconductor device 8. Floating conductors 9 extend along thin film wiring 19 to face each other.

In FIG. 7, conductive NFS wiring 19 is formed on a glass substrate 20, and the semiconductor device 1 is connected via conductive particles 21. In FIG. In this case, as shown in FIG. 8, there is a possibility that the conductive particles 21 may come into contact with the thin film interconnection 119 and the semiconductor device 1 at a location other than the electrode. The present invention is also effective in this case.

[Effects of the Invention] As described above, according to the present invention, by providing independent floating conductors on the semiconductor substrate facing the lead-out portion of the leads, leaks caused by contact between the leads and the semiconductor substrate can be prevented. Even if a high voltage is applied to the input/output electrodes, no electric field is generated between the lead-out portion of the lead and the semiconductor substrate. Even if the resin exhibits conductivity due to humidity, a semiconductor device with excellent moisture resistance can be obtained without deteriorating the leads or the semiconductor device. Furthermore, since the electric field of the electrode is relaxed, it is possible to carry out finer packaging, and it is possible to provide a semiconductor device that can handle higher voltages.

[Brief explanation of the drawing]

1A and 1B are a sectional view and a surface view of a semiconductor device showing an embodiment of the present invention. FIGS. 2A and 2B are a cross-sectional view and a surface view showing a conventional semiconductor device and its problems. FIG. 3 is an equivalent circuit diagram of a conventional semiconductor device. FIG. 4 is an equivalent circuit diagram of a semiconductor device showing an embodiment of the present invention. 5, 6, 7, and 8 are cross-sectional views of semiconductor devices in which the present invention is applied to other mounting methods. 1: Semiconductor device 2: Chip edge 3: Electrode opening 4: Conductive protrusion 5 Ni-aluminum electrode 6.7.8: @ film 9: Poly-3i or A1 floating conductor 10 Ni-aluminum wiring 11.17: Lead 12: P-type substrate side potential 13: Lead side potential 14: Resistance R 15, 16: Capacitance C1, C2 1st: Circuit board 19: i-film wiring 20 Ni glass substrate 21: Conductive particles and above Applicant: Seiko Epson Corporation Agent Person Patent attorney Kizobe Suzuki (and 1 other person) Figure 1A Figure 1B Figure 2A Figure 2B Figure 4

Claims (1)

[Claims] In a semiconductor device that has a plurality of signal or power input/output electrodes and inputs/outputs a potential or signal to the outside through a wire, rod-shaped or thin film-shaped conductor from the electrodes, the wire, rod-shaped or thin film-shaped conductor is A semiconductor device characterized in that floating conductors are individually provided on a semiconductor substrate facing a drawer portion.