JPH04188752A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04188752A JPH04188752A JP31755790A JP31755790A JPH04188752A JP H04188752 A JPH04188752 A JP H04188752A JP 31755790 A JP31755790 A JP 31755790A JP 31755790 A JP31755790 A JP 31755790A JP H04188752 A JPH04188752 A JP H04188752A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- wafer
- high melting
- polycide
- aluminum film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000001179 sorption measurement Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000002203 pretreatment Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 11
- 238000003860 storage Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 210000001015 abdomen Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体装置のアルミニウム膜堆積工程の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a manufacturing method of an aluminum film deposition process for a semiconductor device.
［従来の技術〕
従来のアルミニウム膜堆積の製造工程は、弗化水素酸系
溶液を用いたウェットエツチングによる前処理からアル
ミニウム膜を堆積するまでの間、半導体装置を製造する
クリーンルーム内環境と同等の雰囲気中に、第２図に示
すような容器の中に保持されていた。[Conventional technology] The conventional manufacturing process for aluminum film deposition, from pretreatment by wet etching using a hydrofluoric acid solution to depositing the aluminum film, uses an environment equivalent to that in a clean room where semiconductor devices are manufactured. It was held in a container as shown in FIG. 2 in an atmosphere.
［発明が解決しようとする課題］
しかし、従来技術では、高融点金属ポリサイド膜が時間
とともに吸湿し、通常のアルミニウム腹堆積以降の製造
工程における熱履歴により、前記ポリサイド膜表面から
ガス放出が起こり、密着性の弱い高融点金属ポリサイド
とアルミニウム界面に空隙が発生して、前記両金属を接
続するコンタクト部の抵抗が高くなり、開放状態になる
場合も生ずるという問題点を有する。[Problems to be Solved by the Invention] However, in the conventional technology, the high melting point metal polycide film absorbs moisture over time, and gas is released from the surface of the polycide film due to the thermal history in the manufacturing process after normal aluminum belly deposition. There is a problem in that a gap is generated at the interface between the high melting point metal polycide and the aluminum, which has weak adhesion, and the resistance of the contact portion connecting the two metals becomes high, sometimes resulting in an open state.
本発明は、このような間８点を解決するもので、その目
的とするところは、安定した信頼性の高い高融点金属ポ
リサイドとアルミニウム間コンタクト構造を提供すると
ころにある。The present invention solves these eight problems, and its purpose is to provide a stable and highly reliable contact structure between high melting point metal polycide and aluminum.
［課題を解決す］ための手段］
本発明の半導体装置の製造方法は、高融点金属ポリサイ
ドとアルミニウム配線がコンタクト孔を介して接する構
造を有する半導体装置のアルミニウム膜堆積の製造工程
において、前処理からアルミニ“ラム膜を堆積するまで
の期間を、窒素雰囲気中で保持することを特徴とする。[Means for Solving the Problem] The method for manufacturing a semiconductor device of the present invention includes pretreatment in the manufacturing process of aluminum film deposition of a semiconductor device having a structure in which a high melting point metal polycide and an aluminum wiring are in contact with each other via a contact hole. The process is characterized by being maintained in a nitrogen atmosphere during the period from 1 to 10 minutes until the aluminum laminate film is deposited.
［実施例］
第１図に、本発明の半導体製造装置の製造方法による一
実施例を示す。[Example] FIG. 1 shows an example of the method for manufacturing a semiconductor manufacturing apparatus of the present invention.
１１はウェハー、１２はウェハーキャリア、１３は保管
庫、１４はへパフイルター、１５は循環ユニットである
。11 is a wafer, 12 is a wafer carrier, 13 is a storage, 14 is a hepa filter, and 15 is a circulation unit.
以下、詳細に説明する。This will be explained in detail below.
まず、通常のフォトエッチ工程にて高融点金属ポリサイ
ドとアルミニウムを接続するコンタクト孔を開孔した後
、アルミニウム膜堆積の前処理として、高融点金属ポリ
サイド膜表面に形成された自然酸化膜の除去、及び、オ
ーミックな電気特性を得る目的で、弗化水素酸系溶液で
エツチングを行う。そして、アルミニウム膜をスパッタ
法により堆積するまでの間、保管庫１３内にウェハーを
保持する。First, after forming a contact hole connecting the high melting point metal polycide and aluminum using a normal photo-etching process, as a pretreatment for aluminum film deposition, the natural oxide film formed on the surface of the high melting point metal polycide film is removed. Then, etching is performed using a hydrofluoric acid solution for the purpose of obtaining ohmic electrical characteristics. The wafer is then held in the storage 13 until the aluminum film is deposited by sputtering.
保管庫１３は前面に扉を有するチャンバーになっており
、ファンを有し、チャンバー内の雰囲気を循環させる働
きをもつ循環ユニット１５を備えている。そして、チャ
ンバー内に窒素ガスを導入することにより、ウェハーを
空気及び水分と接しない機構となっている。The storage 13 is a chamber with a door on the front, and is equipped with a circulation unit 15 that has a fan and functions to circulate the atmosphere inside the chamber. By introducing nitrogen gas into the chamber, the wafer is prevented from coming into contact with air and moisture.
半導体製造工程中にあるウェハー１１及びウェハーキャ
リア１２を次工程のアルミニウムをスパッタするまでの
間、このような保管庫内に、窒素雰囲気中に保持するこ
とで、ウェハー表面の酸化及び水分の吸着が抑制され、
より安定した信頼性の高い高融点金属ポリサイドとアル
ミニウム間コンタクト構造を提供することができる。By keeping the wafers 11 and wafer carriers 12 in the semiconductor manufacturing process in a nitrogen atmosphere in such a storage room until aluminum is sputtered in the next process, oxidation and moisture adsorption on the wafer surfaces can be prevented. suppressed,
A more stable and reliable contact structure between high melting point metal polycide and aluminum can be provided.
尚、窒素雰囲気中の保持環境としては、高融点金属ポリ
サイド表面が窒化しないよう、２０〜６０°Ｃ及び１０
０時間以内であることが望ましい。In addition, the holding environment in the nitrogen atmosphere is 20 to 60°C and 10
It is desirable that the time is within 0 hours.
［発明の効果コ
以上述べてきたように、本発明によれば、高融点金属ポ
リサイドとアルミニウム配線がコンタクト孔を介して接
する構造を有する半導体装置のアルミニウム膜堆積の製
造工程において、前処理からア”ルミニウム膜を堆積す
るまでの期間を、窒素雰囲気中で保持することで、ウェ
ハー表面の酸化及び水分の吸着が抑制され、より安定し
た高融点金属ポリサイドとアルミニウム間のコンタクト
抵抗を得ることが可能となり、且つ、信頼性の高いコン
タクト構造を提供することが可能となる。[Effects of the Invention] As described above, according to the present invention, in the manufacturing process of aluminum film deposition of a semiconductor device having a structure in which a high melting point metal polycide and an aluminum wiring are in contact with each other through a contact hole, it is possible to ``By keeping the wafer in a nitrogen atmosphere until the aluminum film is deposited, oxidation and moisture adsorption on the wafer surface are suppressed, making it possible to obtain a more stable contact resistance between the high-melting point metal polycide and aluminum. In addition, it becomes possible to provide a highly reliable contact structure.
第１図は、本発明の実施例における半導体装置の製造方
法を示す工程図。
第２図は、従来の半導体装置の製造方法を示す工程図。
１１．２１・・・ウェハー
１２．２２・・・ウェハーキャリア
１３．２３・・・保管庫
１４ ・ ・・ヘパフィルタ−
１５・・・循環ユニット
以上
出願人 セイコーエプソン株式会社FIG. 1 is a process diagram showing a method for manufacturing a semiconductor device in an embodiment of the present invention. FIG. 2 is a process diagram showing a conventional method for manufacturing a semiconductor device. 11.21...Wafer 12.22...Wafer carrier 13.23...Storage 14...Hepa filter 15...Circulation unit and above Applicant Seiko Epson Corporation
Claims (1)
孔を介して接する構造を有する半導体装置のアルミニウ
ム膜堆積の製造工程において、前処理からアルミニウム
膜を堆積するまでの期間を、窒素雰囲気中で保持するこ
とを特徴とする半導体装置の製造方法。In the manufacturing process of aluminum film deposition for a semiconductor device having a structure in which high melting point metal polycide and aluminum wiring are in contact with each other through a contact hole, the period from pretreatment to depositing the aluminum film is maintained in a nitrogen atmosphere. A method for manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02317557A JP3125302B2 (en) | 1990-11-21 | 1990-11-21 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02317557A JP3125302B2 (en) | 1990-11-21 | 1990-11-21 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04188752A true JPH04188752A (en) | 1992-07-07 |
| JP3125302B2 JP3125302B2 (en) | 2001-01-15 |
Family
ID=18089587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02317557A Expired - Fee Related JP3125302B2 (en) | 1990-11-21 | 1990-11-21 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3125302B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306642A (en) * | 1995-05-04 | 1996-11-22 | Hyundai Electron Ind Co Ltd | Polysilicon layer formation method of semiconductor element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101382883B1 (en) * | 2013-10-21 | 2014-04-08 | 김진우 | Cosmetics containers cap |
-
1990
- 1990-11-21 JP JP02317557A patent/JP3125302B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306642A (en) * | 1995-05-04 | 1996-11-22 | Hyundai Electron Ind Co Ltd | Polysilicon layer formation method of semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3125302B2 (en) | 2001-01-15 |
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