JPH04186743A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04186743A JPH04186743A JP31967490A JP31967490A JPH04186743A JP H04186743 A JPH04186743 A JP H04186743A JP 31967490 A JP31967490 A JP 31967490A JP 31967490 A JP31967490 A JP 31967490A JP H04186743 A JPH04186743 A JP H04186743A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- probe
- electrode pad
- conductor line
- metal conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000010931 gold Substances 0.000 claims abstract description 27
- 239000000523 sample Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 238000007747 plating Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 2
- 239000010980 sapphire Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 240000003296 Petasites japonicus Species 0.000 description 1
- 235000003823 Petasites japonicus Nutrition 0.000 description 1
- 235000001436 butterbur Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置に係り、特に数十Ｍ８２以上の
高周波帯で動作する半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device that operates in a high frequency band of several tens of M82 or more.
第２図（ａ）はＲＦプローブが電極パッドにコンタクト
している状態を示す斜視図、第２図（ｂ）は従来の電極
パッドを示す断面側面図である。この図において、１は
Ｇ ａ Ａ ｓ等の半導体基板、２゜３はこの半導体基
板１上に形成された信号用電極パッド、および接地用電
極バ・ソドで、蒸着によりＡｕ蒸着層として形成されて
いる。、４はマイクロ波信号を伝送する金属導体ライン
、５はプローブニードルボデ（である。FIG. 2(a) is a perspective view showing a state in which an RF probe is in contact with an electrode pad, and FIG. 2(b) is a sectional side view showing a conventional electrode pad. In this figure, 1 is a semiconductor substrate such as GaAs, 2 and 3 are signal electrode pads and ground electrode pads formed on this semiconductor substrate 1, and are formed as an Au vapor deposition layer by vapor deposition. ing. , 4 is a metal conductor line for transmitting microwave signals, and 5 is a probe needle body.
従来は第２図（ｂ）のように、Ｇ ａ Ａ ｓ等の半導
体基板１上にＡｕを蒸着してＡｕ蒸着層（電極パッド）
２，３を形成していた。Conventionally, as shown in FIG. 2(b), Au is deposited on a semiconductor substrate 1 such as GaAs to form an Au deposition layer (electrode pad).
2 and 3 were formed.
ＲＦＦＩ定時には、プローブニードルボデｒ５にＲＦ信
号が伝播する金属導体ライン４をコブし−ナ形に配した
ＲＦプローブをＧａＡｓ等の半導体基板１上に蒸着によ
り形成した電極パッド２，３に接触させて測定を行って
いた。During RFFI regular operation, an RF probe with a metal conductor line 4 through which an RF signal propagates is arranged in a hump-round shape on the probe needle body r5 is brought into contact with electrode pads 2 and 3 formed by vapor deposition on a semiconductor substrate 1 such as GaAs. measurements were taken.
［発明が解決しようとする課題］
従来の半導体装置の電極パッド２，３は以上のように形
成されているので、Ａｕ蒸着層がＲＦプローブの金属導
体ライン４の強度に対して比較的硬いことや、金属導体
ライン４の厚さの製作精度が悪い（ライ、幅５０μｍの
もので１μｍ程度の誤差がある場合がある）などの理由
により電極パッド２，３と金属導体ライン４の接触性が
悪く、ＲＦプローブを電極パッド２，３に強く押しあて
なければならず、過大な力が加わったり、金属導体ライ
ン４の摩耗が激しいため、ＲＦプロ゛−ブの寿命が短い
という問題点があった。。[Problems to be Solved by the Invention] Since the electrode pads 2 and 3 of the conventional semiconductor device are formed as described above, the Au vapor deposition layer is relatively hard compared to the strength of the metal conductor line 4 of the RF probe. The contact between the electrode pads 2 and 3 and the metal conductor line 4 may be poor due to reasons such as poor manufacturing precision of the thickness of the metal conductor line 4 (there may be an error of about 1 μm for a 50 μm wide lie), etc. Unfortunately, the RF probe has to be strongly pressed against the electrode pads 2 and 3, resulting in excessive force and severe wear on the metal conductor line 4, resulting in a short lifespan of the RF probe. Ta. .
この発明は、上記のような問題点を解消するためになさ
れたもので、接触性の良いＲＦプローブ用の電極パッド
を得ることを目的とする。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain an electrode pad for an RF probe with good contact properties.
この発明に係る半導体装置は、電極バ・ノドの最上層に
１μｍ以上の厚さの金メッキ層を形成したものである。The semiconductor device according to the present invention has a gold plating layer with a thickness of 1 μm or more formed on the top layer of the electrode plate.
この発明においては、電極パッドの最上層に１μｍ以上
の厚さの金メ・ツキ層が形成されているので、金メッキ
層表面の凹凸や、Ａｕ蒸着層より金メッキ層の方が軟か
いこと等により、ＲＦプローブと電極パッドの接触性が
向上し、ＲＦプローブの金属導体ラインの摩耗が少ない
。In this invention, since a gold plating layer with a thickness of 1 μm or more is formed on the top layer of the electrode pad, it is difficult to prevent unevenness on the surface of the gold plating layer and the fact that the gold plating layer is softer than the Au vapor deposited layer. , the contact between the RF probe and the electrode pad is improved, and the wear of the metal conductor line of the RF probe is reduced.
第１図はこの発明の一実施例を示す電極パッド部分の側
面断面図である１、第１図において、第２図と同一符号
は同一構成部分を示し、６は的記ＡＵ蒸着層（電極パッ
ド）２，３の最上層に１μｍ以上の厚さで形成されたＡ
ｕメ・フキ層である。1 is a side sectional view of an electrode pad portion showing an embodiment of the present invention. In FIG. 1, the same reference numerals as in FIG. A formed on the top layer of pads 2 and 3 with a thickness of 1 μm or more
This is the Ume butterbur layer.
このように電極バ・ノド２，３上にＡｕメッキによって
形成されたＡｕメッキ層６の表面は凹凸があり、また、
Ａｕメッキ層６自体がＡｕ蒸着層２゜３よりも軟かい。As described above, the surface of the Au plating layer 6 formed by Au plating on the electrode blades 2 and 3 is uneven, and
The Au plating layer 6 itself is softer than the Au vapor deposition layer 2°3.
また、１μｍ以上の厚さがあるので、金属導体ライ＞４
の製造誤差（１μｍ程度）があっても、ＲＦプローブを
電極バ・ノド２，３に接触させた時に相殺できるため、
接触性に優れている。In addition, since the thickness is 1 μm or more, the metal conductor line>4
Even if there is a manufacturing error (about 1 μm), it can be canceled out when the RF probe is brought into contact with the electrode bars 2 and 3.
Excellent contact properties.
なお、上記実施例では、Ａｕ蒸着層２，３の上にＡｕメ
ッキ層６を形成したが、最上層であれば下層金属は何て
あってもよい。また、半導体基板１としてはＧａＡｓに
限らずアルミナやサファイア等の誘電体基板を用いても
よい。In the above embodiment, the Au plating layer 6 was formed on the Au vapor deposited layers 2 and 3, but any underlying metal may be used as long as it is the uppermost layer. Furthermore, the semiconductor substrate 1 is not limited to GaAs, but may also be a dielectric substrate made of alumina, sapphire, or the like.
以上説明したように、この発明は、ＲＦプローブの金属
導体ラインが接触する電極パッドの最上層に１μｍ以上
の厚さてＡｕメ・ツキ層を形成したので、Ａｕメッキの
凹凸により金属導体ライ、の電極パッドへの接触性が向
上する。したがって、ＲＦプローブを電極パッドに強（
当てずζこ済む。As explained above, in this invention, an Au plating layer with a thickness of 1 μm or more is formed on the top layer of the electrode pad that the metal conductor line of the RF probe comes into contact with, so that the metal conductor line is Improves contact with the electrode pad. Therefore, the RF probe is strongly attached to the electrode pad (
You can get away with no guesses.
また、Ａｕ、メッキ層の方が電極パ・ノドよりも軟ｂ）
く、かつ１μｍ以上の厚さがあるので、金属導体ライン
の凹凸を吸収できるため、弱いコレタフ１−で済み、Ｒ
Ｆプローブの寿命が長（なる効果が得られる。Also, the Au plating layer is softer than the electrode pad/nod b)
Since it is thin and has a thickness of 1 μm or more, it can absorb the unevenness of the metal conductor line, so a weak core tough 1- is sufficient, and R
The F-probe has a long service life.
第１図はこの発明の一実施例による電極）＜Ｆノドを示
す断面側面図、第２図（ａ）は電極パッドにＲＦプロー
ブが接触している状態を示す斜視図、第２図（ｂ）は従
来の電極パッドを示す断面側面図である。
図において、１は半導体基板、２は信号用電極パッド、
３は接地用電極パッド、４は金属導体ライン、５はプロ
ーブニードルボディ、６はＡｕメキ層である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）第１図
５： ＡｕメツＡ層
第２図
４ニ一１ｉ蔦導イ本ライン 、。
５、ブローブニードルボテイFIG. 1 is a cross-sectional side view showing an electrode)<F node according to an embodiment of the present invention, FIG. ) is a cross-sectional side view showing a conventional electrode pad. In the figure, 1 is a semiconductor substrate, 2 is a signal electrode pad,
3 is a grounding electrode pad, 4 is a metal conductor line, 5 is a probe needle body, and 6 is an Au plating layer. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 5: Au Metsu A layer Figure 2 4 Ni-1i Tsuta leading line. 5. Blow needle body
Claims (1)
伝送する金属導体ラインが接触する半導体装置において
、前記電極パッドの最上層に１μｍ以上の厚さの金メッ
キ層を形成したことを特徴とする半導体装置。A semiconductor device in which a metal conductor line for transmitting a microwave signal of an RF probe contacts an electrode pad on a substrate, characterized in that a gold plating layer with a thickness of 1 μm or more is formed on the top layer of the electrode pad. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31967490A JPH04186743A (en) | 1990-11-20 | 1990-11-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31967490A JPH04186743A (en) | 1990-11-20 | 1990-11-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04186743A true JPH04186743A (en) | 1992-07-03 |
Family
ID=18112926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31967490A Pending JPH04186743A (en) | 1990-11-20 | 1990-11-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04186743A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448766A (en) * | 2015-12-31 | 2016-03-30 | 上海华虹宏力半导体制造有限公司 | Power device fail point positioning method |
| JP2016195221A (en) * | 2015-04-01 | 2016-11-17 | 住友電工デバイス・イノベーション株式会社 | Semiconductor device, and measurement method for the same |
-
1990
- 1990-11-20 JP JP31967490A patent/JPH04186743A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016195221A (en) * | 2015-04-01 | 2016-11-17 | 住友電工デバイス・イノベーション株式会社 | Semiconductor device, and measurement method for the same |
| CN105448766A (en) * | 2015-12-31 | 2016-03-30 | 上海华虹宏力半导体制造有限公司 | Power device fail point positioning method |
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