JPH03132201A - Microwave integrated circuit device - Google Patents

Abstract

PURPOSE:To improve the low-pass filter characteristic of a bias circuit by connecting a signal line to a conductor pattern with a metallic fine wire, and connecting the conductor pattern to the bias circuit with a soldered metallic wire or a metallic wire adhered with a conductive adhesive. CONSTITUTION:The signal line 3 is comprised on a dielectic substrate 2 for signal line with a microstrip line, and the bias circuit 5 is comprised on a dielectric substrate 4 for bias circuit with the microstrip line. The dielectric constant of the substrate 4 for bias circuit is set higher than that of the dielectric substrate 2 for signal line, and a pattern 7 for connection is provided on the substrate 2 for signal line separately from the signal line 3. And one terminal of the bias circuit 5 is connected to the pattern 7 for connection with the metallic wire 8, and the other terminal of the bias circuit 5 is connected to a bias terminal 9, and the metallic fine wire 6 connects the pattern 7 for connection to the center part of the signal line 3. Thereby, it is possible to improve the low-pass filter characteristic of the bias circuit 5, and to eliminate the influence of the bias circuit 5 on the signal line 3.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a microwave integrated circuit device equipped with a bias circuit composed of a semiconductor element and a microstrip line.

Conventional technology When using a semiconductor device in a microstrip line, a low-pass filter type that combines a high impedance line with a length of 1/4 wavelength and a low impedance line with a length of 1/4 wavelength is used. Bias circuits are often used.

FIG. 2 shows a top view of a conventional microwave integrated circuit device. In FIG. 2, 31 is a semiconductor element, 32 is a dielectric substrate, 33 is a signal line, 34 is a bias circuit, and 35 is a bias terminal. The signal line 33 and the bias circuit 34 are formed of microstrip lines on the dielectric substrate 32. The bias circuit 34 consists of a high impedance line with a narrow line width of 1/4 wavelength and a 1/4 line with a wide line width.
This is a low-pass filter that combines a wavelength-long low-impedance line.

In the conventional microwave integrated circuit device configured as described above, power is supplied to the semiconductor element 31 from the bias terminal 35 via the bias circuit 34 and the signal line 33. The bias circuit 34 is a low-pass filter, and the signal line 33
The signal components transmitted through the bias terminal 35 are prevented from being transmitted to the bias terminal 35, and the DC components are allowed to pass through.

Problems to be Solved by the Invention However, in the above configuration, the bias circuit 34
is formed on the same dielectric substrate 32 as the signal line 33, so when the dielectric constant of the dielectric substrate 32 is high or the thickness of the dielectric substrate 32 is thin, it is different when the dielectric constant is low or the thickness is thick. The width of the line that achieves the same impedance becomes narrower. There is a manufacturing limit to narrowing the width of the line, so if the dielectric substrate 32 has a high dielectric constant and is thin, the width of the high impedance line of the bias circuit 34 cannot be narrowed sufficiently, and it may be difficult to make the high impedance line narrow enough. As a result, the low-pass filter characteristics of the bias circuit 34 deteriorates, and the bias circuit 34 becomes a non-negligible impedance to the signal line 33, causing the signal frequency to become lower than the bias terminal 3.
5, and the overall characteristics deteriorated.

SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a microwave integrated circuit device that makes it possible to apply a bias to a semiconductor element with almost no effect on a signal line.

Means for Solving the Problems The present invention provides a semiconductor element, a signal line composed of a microstrip line on a first dielectric substrate, and a signal line composed of a microstrip line on a second dielectric substrate. A bias circuit and a metal carrier are provided, the dielectric constant of the second dielectric substrate is smaller than the dielectric constant of the first dielectric substrate, and a pattern is connected to the signal line on the first dielectric substrate. The signal line and the conductor pattern are connected with a thin metal wire, and the conductor pattern and the bias circuit are connected with a soldered metal wire or a metal wire bonded with a conductive adhesive. It is composed of ζ.

Effect of the present invention With the above-described configuration, the dielectric constant of the second dielectric substrate is lower than the dielectric constant of the first dielectric substrate, so that the impedance of the high impedance line of the bias circuit can be increased. Low-pass filter characteristics can be obtained. Furthermore, since the thin metal wire is directly connected to the signal line, the bias circuit has almost no effect on the signal line.

Embodiment FIG. 1 shows a configuration diagram of a microwave integrated circuit device in an embodiment of the present invention. In FIG. 1, 1 is a semiconductor element;
2 is a dielectric substrate for signal line made of alumina ceramic, 3
4 is a signal line, 4 is a bias circuit dielectric substrate made of tetrafluoroethylene, 5 is a bias circuit, 6 is a thin metal wire, 7 is a connection pattern, 8 is a metal wire, and 9 is a bias terminal.

The signal line 3 is formed of a microstrip line on the dielectric substrate 2 for signal line, and the bias circuit 5 is formed of a microstrip line on the dielectric substrate 4 for bias circuit. Bias circuit 5 is a narrow quarter of the line width
This is a low-pass filter that combines a wavelength-long high-impedance line and a quarter-wavelength low-impedance line with a wide line width. Bias circuit dielectric substrate 4
A connection pattern 7 is provided on the signal line dielectric substrate 2 , which has a dielectric constant higher than that of the signal line dielectric substrate 2 , apart from the signal line 3 .

One end of the bias circuit 5 is connected to the connection pattern 7 by a metal wire 8, and the other end of the bias circuit 5 is connected to a bias terminal 9. The thin metal wire 6 connects the connection pattern 7 and the center of the signal line 3.

The operation of the microwave integrated circuit device of the first embodiment configured as described above will be explained below. In FIG. 1, a semiconductor device 1 is connected to a bias terminal 9 through a bias circuit 5. Metal wire8. Connection pattern 7, thin metal wire 6. Power is supplied via the signal line 3. The bias circuit 5 is a low-pass filter, and blocks the signal component transmitted through the signal line 3 from being transmitted to the bias terminal 9, and allows the DC component to pass. Generally, in microstrip lines having the same line width, the lower the dielectric constant of the dielectric substrate and the thicker the dielectric substrate, the higher the impedance of the line.

In FIG. 1, the dielectric constant of the bias circuit dielectric substrate 4 is lower than that of the signal line dielectric substrate 2, and the bias circuit dielectric substrate 4 and the signal line dielectric substrate 2 have approximately the same thickness. It is. Since there is a limit to narrowing the line width of the microstrip line, it is better to configure the microstrip line on the dielectric substrate 4 for the bias circuit than it is to configure the microstrip line on the dielectric substrate 2 for the signal line. It is possible to achieve higher impedance than in the case of

Further, since the impedance of the thin metal wire 6 is sufficiently high and it is connected to the center of the signal line 3, it has less influence on the signal line 3 than when connected to the end of the signal line 3. Therefore, excellent low-pass characteristics of the bias circuit 5 can be achieved.

As described above, according to this embodiment, the bias circuit is provided on a dielectric substrate with a low dielectric constant, the signal line is provided on a dielectric substrate with a high dielectric constant, and the bias circuit is provided from the center of the signal line through a thin metal wire. By adding , it is possible to obtain excellent low-pass filter characteristics of the bias circuit. Further, it is possible to realize an impedance bias circuit that does not affect the signal line.

As described in detail, according to the present invention, it is possible to easily realize a microwave integrated circuit device in which the low-pass characteristics of the bias circuit is improved and the bias circuit has little influence on the signal line. , its practical value is great.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of a microwave integrated circuit device according to an embodiment of the present invention, and FIG. 2 is a top view of a conventional microwave integrated circuit device. 1...Semiconductor element, 2...Dielectric substrate for signal line, 3...Signal line, 4...
Dielectric substrate for bias circuit, 5...Bias circuit, 6...Metal thin wire, 7...Connection pattern, 8...Metal wire, 9... Old...bias terminal.

Claims (1)

[Claims] a semiconductor element, a signal line configured with a microstrip line on a first dielectric substrate, and a bias circuit configured with a microstrip line on a second dielectric substrate;
a metal carrier, the second dielectric substrate has a dielectric constant lower than that of the first dielectric substrate, and is not connected to the signal line in a pattern on the first dielectric substrate. A conductor pattern is provided, the signal line and the conductor pattern are connected by a thin metal wire, and the conductor pattern and the bias circuit are connected by a soldered metal wire or a metal wire bonded with a conductive adhesive. Microwave integrated circuit device.