JP5068500B2 - Millimeter wave RF probe pad - Google Patents

Millimeter wave RF probe pad Download PDF

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JP5068500B2
JP5068500B2 JP2006252593A JP2006252593A JP5068500B2 JP 5068500 B2 JP5068500 B2 JP 5068500B2 JP 2006252593 A JP2006252593 A JP 2006252593A JP 2006252593 A JP2006252593 A JP 2006252593A JP 5068500 B2 JP5068500 B2 JP 5068500B2
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pad
probe pad
millimeter wave
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probe
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伸 茶木
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Description

ミリ波ＲＦプローブパッドに関し、特に、オンウェハ測定の精度向上を実現するＧＮＤパッド構造を備えたミリ波ＲＦプローブパッドに関する。   The present invention relates to a millimeter-wave RF probe pad, and more particularly, to a millimeter-wave RF probe pad having a GND pad structure that realizes an improvement in on-wafer measurement accuracy.

従来のＭＭＩＣ（Ｍｏｎｏｌｉｔｈｉｃ Ｍｉｃｒｏｗａｖｅ Ｉｎｔｅｇｒａｔｅｄ Ｃｉｒｃｕｉｔ：モノリシックマイクロ波集積回路）におけるミリ波ＲＦ（Ｒａｄｉｏ Ｆｒｅｑｕｅｎｃｙ）プローブパッドのＧＮＤパッドは、ヴィアホールによって、裏面のグランドと接続されていた。このようなヴィアホールを用いることにより、ＡＣ成分ばかりでなくＤＣ成分も含めたショート端として機能できる（例えば、特許文献１参照）。   A GND pad of a millimeter wave RF (Radio Frequency) probe pad in a conventional MMIC (Monolithic Microwave Integrated Circuit) is connected to the ground on the back surface by a via hole. By using such a via hole, it can function as a short end including not only the AC component but also the DC component (see, for example, Patent Document 1).

特開平９−３６６０１号公報JP 9-36601 A

しかしながら、従来技術には次のような課題がある。ヴィアホールには、数１０ｐＨのインダクタンスが寄生成分として存在するため、ミリ波帯では、その影響でプローブ部分の損失が増大し、特性が劣化するという問題がある。   However, the prior art has the following problems. In the via hole, an inductance of several tens of pH is present as a parasitic component. Therefore, in the millimeter wave band, there is a problem that the loss of the probe portion increases due to the influence and the characteristics deteriorate.

図８は、従来のミリ波ＲＦプローブパッドの構成図である。上下に３つ並んだパッドのうち、両端のパッドは、ＧＤＮパッド１０であり、中央のパッドは、信号用パッド２０である。両端のＧＮＤパッド１０は、それぞれヴィアホールによって裏面のグランドと接続されている。   FIG. 8 is a configuration diagram of a conventional millimeter wave RF probe pad. Of the three pads arranged vertically, the pads at both ends are GDN pads 10, and the center pad is a signal pad 20. The GND pads 10 at both ends are connected to the ground on the back surface by via holes, respectively.

図９は、従来のヴィアホールを備えたＧＮＤパッド１０の１ポートのＳパラメータ計算結果を示したスミスチャートである。計算端面は、図８中に示した「計算エリア」に相当する。反射移相が周波数とともにスミスチャート上で時計回りに変化し、約９０ＧＨｚにおいて、オープン状態になっていることがわかる。これによって、ミリ波帯におけるＲＦプローブのロスは増加し、ＭＭＩＣ全体の特性を劣化させてしまう。   FIG. 9 is a Smith chart showing the S-parameter calculation result for one port of the GND pad 10 having a conventional via hole. The calculation end face corresponds to the “calculation area” shown in FIG. It can be seen that the reflection phase shift changes clockwise on the Smith chart along with the frequency, and is in an open state at about 90 GHz. This increases the loss of the RF probe in the millimeter wave band and degrades the overall characteristics of the MMIC.

本発明は、上記のような課題を解決するためになされたもので、ミリ波帯におけるＲＦプローブのロスの増加を低減することのできるミリ波ＲＦプローブパッドを得ることを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a millimeter-wave RF probe pad that can reduce an increase in RF probe loss in the millimeter-wave band.

本発明に係るミリ波ＲＦプローブパッドは、６０ＧＨｚ以上のオンウェハ測定に用いるミリ波ＲＦプローブパッドにおいて、グランドパッドを、所望の周波数に対してλ／４の電気長を有するオープンスタブ構造にするとともに、ヴィアホールを介して裏面グランドパターンと接続されたパッド構造を前記オープンスタブ構造に併設したものである。

The millimeter-wave RF probe pad according to the present invention is a millimeter-wave RF probe pad used for on-wafer measurement of 60 GHz or more, and the ground pad has an open stub structure having an electrical length of λ / 4 with respect to a desired frequency . A pad structure connected to the back surface ground pattern through a via hole is provided alongside the open stub structure .

本発明によれば、所望の周波数に対してλ／４の電気長を有するオープンスタブ構造のＧＮＤパッドを備えたプローブパッドを採用することにより、６０ＧＨｚ以上のオンウェハ測定において、ミリ波帯におけるＲＦプローブのロスの増加を低減することのできるミリ波ＲＦプローブパッドを得ることができる。   According to the present invention, an RF probe in the millimeter wave band is used for on-wafer measurement of 60 GHz or more by adopting a probe pad having an open stub structure GND pad having an electrical length of λ / 4 with respect to a desired frequency Thus, it is possible to obtain a millimeter-wave RF probe pad that can reduce an increase in loss.

以下、本発明のミリ波ＲＦプローブパッドの好適な実施の形態につき図面を用いて説明する。   Hereinafter, preferred embodiments of the millimeter-wave RF probe pad of the present invention will be described with reference to the drawings.

実施の形態１．
図１は、本発明の実施の形態１におけるミリ波ＲＦプローブパッドの構成図である。この図１に示したミリ波ＲＦプローブパッドにおいて、ＧＮＤパッド１０は、信号用パッド２０の両端に設けられており、所望の周波数に対してλ／４の電気長を有するオープンスタブ１１を備えた構造となっている。これにより、所望の周波数に対しては、従来のような寄生のインダクタンスの影響はなく、ＧＮＤパッド１０の部分でショート端が得られる構造となる。 Embodiment 1 FIG.
FIG. 1 is a configuration diagram of a millimeter-wave RF probe pad according to Embodiment 1 of the present invention. In the millimeter wave RF probe pad shown in FIG. 1, the GND pad 10 is provided at both ends of the signal pad 20 and includes an open stub 11 having an electrical length of λ / 4 with respect to a desired frequency. It has a structure. As a result, the desired frequency is not affected by the parasitic inductance as in the prior art, and a short end can be obtained at the GND pad 10 portion.

図２は、本発明の実施の形態１におけるオープンスタブ構造を備えたＧＮＤパッドの１ポートのＳパラメータ計算結果を示したスミスチャートである。計算端面は、図１中に示した「計算エリア」に相当する。反射移相が周波数とともに、スミスチャート上で時計回りに変化し、約９０ＧＨｚにおいてショート状態になっていることがわかる。このように、オープンスタブ構造を備えたＧＮＤパッドを用いることにより、所望帯域においてショート状態を得ることができ、ミリ波帯におけるＲＦプローブによるロスは低減される。   FIG. 2 is a Smith chart showing the S-parameter calculation result of one port of the GND pad having the open stub structure in the first embodiment of the present invention. The calculation end face corresponds to the “calculation area” shown in FIG. It can be seen that the reflection phase shift changes with the frequency in the clockwise direction on the Smith chart and is in a short state at about 90 GHz. As described above, by using the GND pad having the open stub structure, a short state can be obtained in a desired band, and the loss due to the RF probe in the millimeter wave band is reduced.

図３は、従来の図９および本発明の図２に示したそれぞれの反射特性の振幅の周波数特性を示した図である。従来のヴィアホールを備えたＧＮＤパッドの場合は、約６０ＧＨｚから反射特性が周波数とともに劣化している。これに対して、本実施の形態１のオープンスタブを備えたＧＮＤパッドの場合は、従来と比較して、より高周波まで良好な反射特性を示していることがわかる。   FIG. 3 is a diagram showing the frequency characteristics of the amplitudes of the respective reflection characteristics shown in FIG. 9 of the prior art and FIG. 2 of the present invention. In the case of a GND pad having a conventional via hole, the reflection characteristics deteriorate with frequency from about 60 GHz. On the other hand, it can be seen that the GND pad provided with the open stub of the first embodiment shows better reflection characteristics up to a higher frequency than in the past.

以上のように、実施の形態１によれば、所望の周波数に対してλ／４の電気長を有するオープンスタブ構造を備えたＧＮＤパッドを用いることにより、プロービングによる損失の低減を実現し、かつ、より高性能なミリ波ＭＭＩＣを実現するミリ波ＲＦプローブパッドを得ることができる。さらに、測定精度の向上が期待できる。   As described above, according to the first embodiment, by using a GND pad having an open stub structure having an electrical length of λ / 4 with respect to a desired frequency, a reduction in loss due to probing is realized, and Therefore, it is possible to obtain a millimeter wave RF probe pad that realizes a higher performance millimeter wave MMIC. Furthermore, improvement in measurement accuracy can be expected.

実施の形態２．
図４は、本発明の実施の形態２におけるミリ波ＲＦプローブパッドの構成図である。先の実施の形態１のミリ波ＲＦプローブパッドのＧＮＤパッド１０において、コプレーナ線路を形成するように、オープンスタブ１１を、信号用パッド２０に接続された信号線路２１の両端に配置した構造としている。さらに、図４に示したように、信号線路２１の信号線路幅、および信号線路２１の端部からオープンスタブ１１までの距離を、所望の特性インピーダンスになるように配置した構造となっている。 Embodiment 2. FIG.
FIG. 4 is a configuration diagram of the millimeter wave RF probe pad according to the second embodiment of the present invention. In the GND pad 10 of the millimeter wave RF probe pad of the first embodiment, the open stub 11 is arranged at both ends of the signal line 21 connected to the signal pad 20 so as to form a coplanar line. . Further, as shown in FIG. 4, the signal line width of the signal line 21 and the distance from the end of the signal line 21 to the open stub 11 are arranged to have a desired characteristic impedance.

これによって、ミリ波ＲＦプローブパッドによる損失の増加を低減するとともに、コプレーナ線路−マイクロストリップ線路変換部の電磁波の不連続を緩和する効果を得ることができる。   As a result, an increase in loss due to the millimeter wave RF probe pad can be reduced, and an effect of alleviating the discontinuity of electromagnetic waves in the coplanar line-microstrip line conversion unit can be obtained.

以上のように、実施の形態２によれば、所望の周波数に対してλ／４の電気長を有するオープンスタブ構造を備えたＧＮＤパッドを用いることにより、プロービングによる損失の低減を実現するミリ波ＲＦプローブパッドを得ることができる。さらに、所望の特性インピーダンスを有するコプレーナ構造からなるＧＮＤパッドを用いることにより、コプレーナ線路−マイクロストリップ線路変換部の電磁波の不連続を緩和することができ、より高性能なミリ波ＭＭＩＣを実現するミリ波ＲＦプローブパッドを得ることができる。   As described above, according to the second embodiment, a millimeter wave that realizes reduction of loss due to probing by using a GND pad having an open stub structure having an electrical length of λ / 4 with respect to a desired frequency. An RF probe pad can be obtained. Further, by using a GND pad having a coplanar structure having a desired characteristic impedance, it is possible to alleviate the discontinuity of electromagnetic waves in the coplanar line-microstrip line conversion unit, and to realize a millimeter wave MMIC with higher performance. A wave RF probe pad can be obtained.

実施の形態３．
図５は、本発明の実施の形態３におけるミリ波ＲＦプローブパッドの構成図である。図５に示す構成において、ＧＮＤパッド１０は、本発明によるオープンスタブ１１と、従来技術によるヴィアホール１２の両方を兼ね備えた構造を有している。このような構造を有することにより、低周波から高周波までのより広い周波数範囲で良好な特性が実現できる。 Embodiment 3 FIG.
FIG. 5 is a configuration diagram of the millimeter wave RF probe pad according to the third embodiment of the present invention. In the configuration shown in FIG. 5, the GND pad 10 has a structure having both an open stub 11 according to the present invention and a via hole 12 according to the prior art. By having such a structure, good characteristics can be realized in a wider frequency range from low frequency to high frequency.

以上のように、実施の形態３によれば、所望の周波数に対してλ／４の電気長を有するオープンスタブ構造と、ヴィアホールを介して裏面グランドパターンと接続された構造とを兼ね備えたＧＮＤパッドを用いることにより、先の実施の形態１、２の効果に加えて、低周波から高周波までのより広い周波数範囲で良好な特性を実現するミリ波ＲＦプローブパッドを得ることができる。   As described above, according to the third embodiment, the GND having both the open stub structure having an electrical length of λ / 4 with respect to a desired frequency and the structure connected to the back surface ground pattern through the via hole. By using the pad, in addition to the effects of the first and second embodiments, it is possible to obtain a millimeter wave RF probe pad that realizes good characteristics in a wider frequency range from low frequency to high frequency.

なお、実施の形態３の構成においても、先の実施の形態２で示したようなコプレーナ構造を採用することも可能であり、実施の形態２と同様の効果を得ることが可能となる。   In the configuration of the third embodiment, a coplanar structure as shown in the second embodiment can also be adopted, and the same effect as in the second embodiment can be obtained.

実施の形態４．
図６は、本発明の実施の形態４におけるミリ波ＲＦプローブパッドの構成図である。図６に示す構成においては、先の図１に示した本願発明によるオープンスタブ構造を備えたＧＮＤパッド１０と信号用パッド２０との間に、さらにヴィアホール１２に接続されたパッド１３を追加して併設配置した構造を示している。 Embodiment 4 FIG.
FIG. 6 is a configuration diagram of the millimeter-wave RF probe pad in the fourth embodiment of the present invention. In the configuration shown in FIG. 6, a pad 13 connected to the via hole 12 is further added between the GND pad 10 having the open stub structure according to the present invention shown in FIG. 1 and the signal pad 20. It shows the structure that is arranged side by side.

本構造では、オンウェハ測定時には、ヴィアホール１２がＧＮＤパッド１０に接続されていないため、図１と同等の特性を示す。また、図７は、本発明の実施の形態４におけるミリ波ＲＦプローブパッドをパッケージ等に実装した場合の接続例を示した図である。図７に示すように、オープンスタブ１１を有するＧＮＤパッド１０とヴィアホール１２に接続されたパッド１３が、ワイヤ１４の根本によって一体化されることで、ワイヤ１４のインダクタを低減することが可能となる。   In this structure, since the via hole 12 is not connected to the GND pad 10 during on-wafer measurement, the same characteristics as those in FIG. 1 are exhibited. FIG. 7 is a diagram showing a connection example when the millimeter wave RF probe pad according to the fourth embodiment of the present invention is mounted on a package or the like. As shown in FIG. 7, the GND pad 10 having the open stub 11 and the pad 13 connected to the via hole 12 are integrated by the base of the wire 14, so that the inductor of the wire 14 can be reduced. Become.

以上のように、実施の形態４によれば、所望の周波数に対してλ／４の電気長を有するオープンスタブ構造と、ヴィアホールを介して裏面グランドパターンと接続された構造とを併設した構成のＧＮＤパッドを用いることにより、オンウェハでの測定時およびパッケージ等に実装後の測定時の両方において、測定精度の向上を実現するミリ波ＲＦプローブパッドを得ることができる。   As described above, according to the fourth embodiment, an open stub structure having an electrical length of λ / 4 with respect to a desired frequency and a structure connected to the back surface ground pattern via a via hole are provided. By using this GND pad, it is possible to obtain a millimeter-wave RF probe pad that realizes improvement in measurement accuracy both in on-wafer measurement and in measurement after being mounted on a package or the like.

なお、実施の形態４の構成においても、先の実施の形態２で示したようなコプレーナ構造を採用することも可能であり、実施の形態２と同様の効果を得ることが可能となる。   In the configuration of the fourth embodiment, it is also possible to employ a coplanar structure as shown in the previous second embodiment, and the same effect as in the second embodiment can be obtained.

本発明の実施の形態１におけるミリ波ＲＦプローブパッドの構成図である。It is a block diagram of the millimeter wave RF probe pad in Embodiment 1 of this invention. 本発明の実施の形態１におけるオープンスタブ構造を備えたＧＮＤパッドの１ポートのＳパラメータ計算結果を示したスミスチャートである。It is a Smith chart which showed the S parameter calculation result of 1 port of the GND pad provided with the open stub structure in Embodiment 1 of this invention. 従来の図９および本発明の図２に示したそれぞれの反射特性の振幅の周波数特性を示した図である。It is the figure which showed the frequency characteristic of the amplitude of each reflection characteristic shown in conventional FIG. 9 and FIG. 2 of this invention. 本発明の実施の形態２におけるミリ波ＲＦプローブパッドの構成図である。It is a block diagram of the millimeter wave RF probe pad in Embodiment 2 of this invention. 本発明の実施の形態３におけるミリ波ＲＦプローブパッドの構成図である。It is a block diagram of the millimeter wave RF probe pad in Embodiment 3 of this invention. 本発明の実施の形態４におけるミリ波ＲＦプローブパッドの構成図である。It is a block diagram of the millimeter wave RF probe pad in Embodiment 4 of this invention. 本発明の実施の形態４におけるミリ波ＲＦプローブパッドをパッケージ等に実装した場合の接続例を示した図である。It is the figure which showed the example of a connection at the time of mounting the millimeter wave RF probe pad in Embodiment 4 of this invention in a package. 従来のミリ波ＲＦプローブパッドの構成図である。It is a block diagram of the conventional millimeter wave RF probe pad. 従来のヴィアホールを備えたＧＮＤパッドの１ポートのＳパラメータ計算結果を示したスミスチャートである。It is a Smith chart which showed the S parameter calculation result of 1 port of the GND pad provided with the conventional via hole.

符号の説明Explanation of symbols

１０ ＧＮＤパッド、１１ オープンスタブ、１２ ヴィアホール、１３ パッド、１４ ワイヤ、２０ 信号用パッド、２１ 信号線路。   10 GND pads, 11 open stubs, 12 via holes, 13 pads, 14 wires, 20 signal pads, 21 signal lines.

Claims (2)

６０ＧＨｚ以上のオンウェハ測定に用いるミリ波ＲＦプローブパッドにおいて、
グランドパッドを、所望の周波数に対してλ／４の電気長を有するオープンスタブ構造にするとともに、ヴィアホールを介して裏面グランドパターンと接続されたパッド構造を前記オープンスタブ構造に併設したことを特徴とするミリ波ＲＦプローブパッド。 In the millimeter wave RF probe pad used for on-wafer measurement of 60 GHz or more,
The ground pad has an open stub structure having an electrical length of λ / 4 with respect to a desired frequency, and a pad structure connected to the back surface ground pattern through a via hole is provided in the open stub structure. A millimeter-wave RF probe pad. 請求項１に記載のミリ波ＲＦプローブパッドにおいて、
前記オープンスタブ構造は、コプレーナ線路を形成するように信号線路の両端にオープンスタブが配置され、前記信号線路の幅と、前記信号線路の端部から前記オープンスタブまでの距離とを所望の特性インピーダンスになるように配置したことを特徴とするミリ波ＲＦプローブパッド。 The millimeter wave RF probe pad according to claim 1 ,
In the open stub structure, open stubs are arranged at both ends of a signal line so as to form a coplanar line, and the width of the signal line and the distance from the end of the signal line to the open stub are set to a desired characteristic impedance. A millimeter-wave RF probe pad characterized by being arranged so that
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WO2013172093A1 (en) * 2012-05-17 2013-11-21 株式会社村田製作所 High-frequency module
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JP2000101309A (en) * 1998-09-22 2000-04-07 Nec Eng Ltd Ground circuit and printed circuit board including the same
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JP2005331298A (en) * 2004-05-18 2005-12-02 Mitsubishi Electric Corp Method for measuring characteristics of high-frequency circuit, pattern for calibration, and fixture for calibration

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