JPH0418646B2 - - Google Patents
Info
- Publication number
- JPH0418646B2 JPH0418646B2 JP60131284A JP13128485A JPH0418646B2 JP H0418646 B2 JPH0418646 B2 JP H0418646B2 JP 60131284 A JP60131284 A JP 60131284A JP 13128485 A JP13128485 A JP 13128485A JP H0418646 B2 JPH0418646 B2 JP H0418646B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- tco layer
- conductive oxide
- oxide layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000001000 micrograph Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000003672 processing method Methods 0.000 description 5
- 229910006854 SnOx Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Manufacturing Of Electric Cables (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Non-Insulated Conductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60131284A JPS61288314A (ja) | 1985-06-17 | 1985-06-17 | 透光性導電酸化物層の加工方法 |
| US06/872,684 US4732621A (en) | 1985-06-17 | 1986-06-10 | Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60131284A JPS61288314A (ja) | 1985-06-17 | 1985-06-17 | 透光性導電酸化物層の加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61288314A JPS61288314A (ja) | 1986-12-18 |
| JPH0418646B2 true JPH0418646B2 (cs) | 1992-03-27 |
Family
ID=15054350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60131284A Granted JPS61288314A (ja) | 1985-06-17 | 1985-06-17 | 透光性導電酸化物層の加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61288314A (cs) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69936526T3 (de) * | 1998-06-01 | 2009-06-25 | Kaneka Corp. | Silizium dünnschicht photoelektrische vorrichtung |
| JP2002287906A (ja) * | 2001-03-23 | 2002-10-04 | Mitsubishi Chemicals Corp | タッチパネル |
| EP1443527A4 (en) | 2001-10-19 | 2007-09-12 | Asahi Glass Co Ltd | SUBSTRATE WITH TRANSPARENT CONDUCTIVE OXIDE FILM AND METHOD OF MANUFACTURING THEREOF AND PHOTOELECTRIC IMPLEMENTATION ELEMENT |
| US7608294B2 (en) | 2003-11-18 | 2009-10-27 | Nippon Sheet Glass Company, Limited | Transparent substrate with transparent conductive film, method of manufacturing the same, and photoelectric conversion element including the substrate |
| JP5235315B2 (ja) * | 2007-03-05 | 2013-07-10 | 株式会社カネカ | 透明電極付き基板の製造方法 |
| JP5890760B2 (ja) * | 2011-07-15 | 2016-03-22 | 日本板硝子株式会社 | 光散乱機能および反射抑制機能を有する光入射面を備えたガラス板 |
-
1985
- 1985-06-17 JP JP60131284A patent/JPS61288314A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61288314A (ja) | 1986-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2504378B2 (ja) | 太陽電池基板の製造方法 | |
| JP3526308B2 (ja) | 受光素子 | |
| JP5012793B2 (ja) | 透明導電性酸化物膜付き基体および光電変換素子 | |
| EP0234222B1 (en) | Solar battery | |
| WO1999063600A1 (fr) | Dispositif photoelectrique a couches minces et a base de silicium | |
| JP3706835B2 (ja) | 薄膜光電変換装置 | |
| EP0102204A1 (en) | An optically enhanced photovoltaic device | |
| TWI443846B (zh) | 透明導電層結構 | |
| JP2013529845A (ja) | 透明導電性酸化膜を備える基体及びその製造方法 | |
| JP2002299661A (ja) | 薄膜結晶質Si太陽電池 | |
| JPH0328073B2 (cs) | ||
| JP2012509603A (ja) | 多重接合光電デバイスおよびその製造プロセス | |
| JP5127925B2 (ja) | 薄膜太陽電池およびその製造方法 | |
| JPH0418646B2 (cs) | ||
| JP2000058892A (ja) | シリコン系薄膜光電変換装置 | |
| JPH0793447B2 (ja) | 光電変換素子 | |
| JP2682658B2 (ja) | 半導体装置 | |
| JP2000223724A (ja) | アモルファスシリコン太陽電池とその製造方法 | |
| JP2892921B2 (ja) | 光起電力装置 | |
| WO2012176467A1 (ja) | 透明導電膜付きガラス板およびその製造方法 | |
| JP3609147B2 (ja) | 光電変換装置 | |
| JP2004031648A (ja) | 光閉じ込め層を持つ光電変換素子と光電変換装置およびこの装置を備えた太陽電池 | |
| JP4570255B2 (ja) | 光電変換装置 | |
| JPS6288927A (ja) | 色センサ | |
| JPS6269408A (ja) | 透明導電膜の粗面化方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |