JPH04184970A - Formation method for microlens - Google Patents
Formation method for microlensInfo
- Publication number
- JPH04184970A JPH04184970A JP2316335A JP31633590A JPH04184970A JP H04184970 A JPH04184970 A JP H04184970A JP 2316335 A JP2316335 A JP 2316335A JP 31633590 A JP31633590 A JP 31633590A JP H04184970 A JPH04184970 A JP H04184970A
- Authority
- JP
- Japan
- Prior art keywords
- microlens
- microlenses
- forming
- lenses
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 6
- 238000004132 cross linking Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 238000004528 spin coating Methods 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は固体撮像素子の感度向上に関するも〔従来の
技術〕
第3図(a)〜(C)は例えば特公昭60−59752
号公報に示されたような従来のマイクロレンズの形成方
法を示す断面フロー図であり、図において、1はシリコ
ン基板、2はフォトダイオード、3はチャネルストップ
、4は転送部、5,7は絶縁層、6はポリシリコンゲー
ト、8はアルミ遮光膜、9はマイクロレンズ、lOは受
光部や信号転送部を有する半導体基板を示す。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to improving the sensitivity of solid-state imaging devices [Prior Art]
1 is a cross-sectional flow diagram showing a conventional method for forming a microlens as shown in the above publication. In the figure, 1 is a silicon substrate, 2 is a photodiode, 3 is a channel stop, 4 is a transfer section, and 5 and 7 are An insulating layer, 6 a polysilicon gate, 8 an aluminum light-shielding film, 9 a microlens, and IO a semiconductor substrate having a light receiving section and a signal transfer section.
次に形成方法について説明する。Next, the formation method will be explained.
受光部や転送部等を有する半導体基板10上に熱軟化性
の透光性材料9aからなる膜をスピン塗布法等により形
成する(第3図(a))。次に、各受光部間のアルミ遮
光膜8上で、マイクロレンズ形成部の端部をエツチング
により除去する(第3図この方法で形成したマイクロレ
ンズは、高い曲率を容易に得ることができ、高い集光能
力を有する。A film made of a heat-softening transparent material 9a is formed on a semiconductor substrate 10 having a light receiving section, a transfer section, etc. by spin coating or the like (FIG. 3(a)). Next, on the aluminum light-shielding film 8 between each light-receiving part, the ends of the microlens forming parts are removed by etching (see Fig. 3) The microlenses formed by this method can easily obtain a high curvature; Has high light gathering ability.
従来のマイクロレンズの形成方法は、以上のように熱に
より軟化させて形成するので、熱安定性に欠け、後工程
のアセンブリ等の熱処理工程で変形を生じる等の問題点
があった。In the conventional method for forming microlenses, as described above, the microlenses are formed by being softened by heat, so they lack thermal stability and have problems such as deformation during heat treatment steps such as assembly in subsequent steps.
この発明は上記のような問題点を解消するためになされ
たもので、熱安定性が高く、かつ高い集光能力を持つマ
イクロレンズの形成方法を得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to provide a method for forming a microlens that has high thermal stability and high light-gathering ability.
この発明に係るマイクロレンズの形成方法は、熱可塑性
樹脂で形成したマイクロレンズにSiのイオン注入を行
い、架橋させて不溶化したものである。In the method for forming a microlens according to the present invention, Si ions are implanted into a microlens made of a thermoplastic resin, and the microlens is crosslinked and made insolubilized.
この発明においては、マイクロレンズを、熱可塑性樹脂
を架橋、不溶化させることにより形成したので、熱や温
材に対し安定で、高い信頼性を有するとともに高い集光
能力を有するものが得られる。In this invention, the microlens is formed by crosslinking and insolubilizing the thermoplastic resin, so that it is stable against heat and hot materials, has high reliability, and has high light gathering ability.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図(a)〜(C)は本発明の一実施例によるマイク
ロレンズの形成方法を示す断面フロー図であり、第3図
と同一符号は同−又は相当部分を示す。又、第1図(C
J中の矢印11はSiのイオン注入を示す。1A to 1C are cross-sectional flow diagrams showing a method for forming a microlens according to an embodiment of the present invention, and the same reference numerals as in FIG. 3 indicate the same or corresponding parts. Also, Figure 1 (C
Arrow 11 in J indicates Si ion implantation.
次に形成方法について説明する。Next, the formation method will be explained.
第1図(a)に示すように、従来と同様に受光部や転送
部等を有する半導体基板IO上に、例えば東京応化製0
FPR−800,0DOR−1013等の熱可塑性透光
性樹脂からなる膜9aをスピン塗布法等により形成する
。次に第1図(b)に示すように各受光部間のアルミ遮
光膜8上で、マイクロレンズ形成部の端部をエツチング
等により除去する。As shown in FIG. 1(a), for example, a
A film 9a made of a thermoplastic translucent resin such as FPR-800 or 0DOR-1013 is formed by spin coating or the like. Next, as shown in FIG. 1(b), the end portions of the microlens forming portions are removed by etching or the like on the aluminum light shielding film 8 between the light receiving portions.
さらに加熱し、例えば0FPR−800の場合150℃
前後で加熱し、フローさせてマイクロレンズ9を形成す
る。最後に第1図(C)に示すようにSiのイオン注入
を行い、マイクロレンズ9を架橋させ、不溶化させる。Further heat, e.g. 150℃ for 0FPR-800.
The microlens 9 is formed by heating the front and back and causing it to flow. Finally, as shown in FIG. 1C, Si ions are implanted to crosslink the microlenses 9 and make them insoluble.
第2図にフェノール系樹脂のSi注入を行った場合の架
橋の機構を示す。例えば、第2図(a)に示したような
フェノール系樹脂にSiを注入した場合、フェノール樹
脂の−OHや−CH,−CH。FIG. 2 shows the crosslinking mechanism when Si is injected into the phenolic resin. For example, when Si is injected into a phenolic resin as shown in FIG. 2(a), -OH, -CH, and -CH of the phenolic resin.
のHを脱離し、例えば第2図(bJに示すように架橋す
る。H is eliminated and cross-linked, for example, as shown in FIG. 2 (bJ).
このような本実施例では、受光部や転送部等を有する半
導体基板lO上に、熱可塑性透光性樹脂からなる膜をス
ピン塗布法等により形成し、端部をエツチング等により
除去したマイクロレンズ形成部に対し、さらに加熱しフ
ローさせてSiのイオン注入を行ったので、マイクロレ
ンズの透光性樹脂層が3次元化した網目構造をとり、耐
熱性が向上し、熱的に安定なマイクロレンズが形成でき
る効果がある。In this example, a film made of thermoplastic translucent resin is formed by spin coating on a semiconductor substrate lO having a light receiving part, a transfer part, etc., and the ends are removed by etching etc. to form a microlens. By further heating and flowing Si ions into the forming area, the transparent resin layer of the microlens takes on a three-dimensional network structure, improving heat resistance and creating a thermally stable microlens. It has the effect of forming a lens.
次に、本発明の他の実施例について説明する。Next, other embodiments of the present invention will be described.
上記一実施例では、エツチング処理後、30分間150
℃の温度で加熱しフローさせ、最後にSiのイオン注入
を行ってマイクロレンズ9を架橋させたが、Si注入量
の少ない場合には、熱フローに先立ってSi注入を行っ
ても良い。この場合、架橋の程度が低いので、熱安定化
の割合は上記実施例に比べて少ないが、マイクロレンズ
化する熱フロー温度を170℃として30分間行うと、
後工程となるアセンブリ等での熱処理時(熱処理温度1
50〜160°C)に変形することなく、上記実施例と
同様に熱安定性が高く集光能力の高いマイクロレンズを
得ることができる効果がある。In the above example, after the etching process, the etching process was performed at 150°C for 30 minutes.
Although the microlens 9 was cross-linked by heating at a temperature of .degree. C. and finally implanting Si ions to crosslink the microlens 9, Si implantation may be performed prior to heat flow. In this case, since the degree of crosslinking is low, the rate of thermal stabilization is lower than in the above example, but if the heat flow temperature for forming microlenses is set to 170°C for 30 minutes,
During heat treatment in assembly, etc., which is a post-process (heat treatment temperature 1
50 to 160[deg.] C.), it is possible to obtain a microlens with high thermal stability and high light-gathering ability, similar to the above embodiments.
以上のように、この発明によれば熱フローさせた熱可塑
性樹脂にSi注入を行い、架橋させて不溶化するように
したので、熱や温材に対し安定で高い集光能力を有する
高信頼性のマイクロレンズを形成することができる。As described above, according to the present invention, Si is injected into the heat-flowed thermoplastic resin to make it cross-linked and insolubilized, resulting in a highly reliable product that is stable against heat and hot materials and has a high light-gathering ability. microlenses can be formed.
第1図はこの発明の一実施例によるマイクロレンズの形
成方法を示す断面フロー図、第2図はこの発明の架橋の
機構を示した図、第3図は従来例によるマイクロレンズ
の形成方法を示す断面フロー図である。
図において、9はマイクロレンズ、10は受光部や信号
転送部を有する半導体基板、11はSi注入を示す。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a cross-sectional flow diagram showing a method for forming a microlens according to an embodiment of the present invention, FIG. 2 is a diagram showing the crosslinking mechanism of the present invention, and FIG. 3 is a diagram showing a method for forming a microlens according to a conventional example. FIG. In the figure, 9 indicates a microlens, 10 indicates a semiconductor substrate having a light receiving section and a signal transfer section, and 11 indicates Si implantation. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
各受光部上に熱可塑性樹脂を母材としたマイクロレンズ
を形成する工程と、 上記マイクロレンズにSi注入を行うことにより、該マ
イクロレンズ母材を架橋せしめる工程とを有することを
特徴とするマイクロレンズの形成方法。(1) A step of forming a microlens using a thermoplastic resin as a base material on each light receiving section on a semiconductor substrate having a light receiving section and a signal transfer section, and injecting Si into the microlens. 1. A method for forming a microlens, comprising the step of crosslinking a base material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2316335A JPH04184970A (en) | 1990-11-19 | 1990-11-19 | Formation method for microlens |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2316335A JPH04184970A (en) | 1990-11-19 | 1990-11-19 | Formation method for microlens |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04184970A true JPH04184970A (en) | 1992-07-01 |
Family
ID=18075980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2316335A Pending JPH04184970A (en) | 1990-11-19 | 1990-11-19 | Formation method for microlens |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04184970A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101452A (en) * | 2003-09-26 | 2005-04-14 | Fuji Film Microdevices Co Ltd | Micro-lens, its manufacturing method, solid-state imaging device and its manufacturing method |
JP2006235459A (en) * | 2005-02-28 | 2006-09-07 | Fuji Photo Film Co Ltd | Manufacturing method for micro lens and manufacturing method for solid imaging element |
-
1990
- 1990-11-19 JP JP2316335A patent/JPH04184970A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101452A (en) * | 2003-09-26 | 2005-04-14 | Fuji Film Microdevices Co Ltd | Micro-lens, its manufacturing method, solid-state imaging device and its manufacturing method |
JP2006235459A (en) * | 2005-02-28 | 2006-09-07 | Fuji Photo Film Co Ltd | Manufacturing method for micro lens and manufacturing method for solid imaging element |
US7309562B2 (en) * | 2005-02-28 | 2007-12-18 | Fujifilm Corporation | Microlens manufacturing method and solid-state image pick-up unit manufacturing method |
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