JPH0418462B2 - - Google Patents
Info
- Publication number
- JPH0418462B2 JPH0418462B2 JP17973285A JP17973285A JPH0418462B2 JP H0418462 B2 JPH0418462 B2 JP H0418462B2 JP 17973285 A JP17973285 A JP 17973285A JP 17973285 A JP17973285 A JP 17973285A JP H0418462 B2 JPH0418462 B2 JP H0418462B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- oxide film
- emitter
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 238000000605 extraction Methods 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 30
- 229920005591 polysilicon Polymers 0.000 description 30
- 238000009792 diffusion process Methods 0.000 description 13
- 230000003321 amplification Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000000137 annealing Methods 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17973285A JPS6239064A (ja) | 1985-08-14 | 1985-08-14 | 半導体装置の製造方法 |
| GB8616735A GB2179201B (en) | 1985-08-14 | 1986-07-09 | Method for fabricating a semiconductor device |
| US06/893,934 US4691436A (en) | 1985-08-14 | 1986-08-06 | Method for fabricating a bipolar semiconductor device by undercutting and local oxidation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17973285A JPS6239064A (ja) | 1985-08-14 | 1985-08-14 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6239064A JPS6239064A (ja) | 1987-02-20 |
| JPH0418462B2 true JPH0418462B2 (ko) | 1992-03-27 |
Family
ID=16070898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17973285A Granted JPS6239064A (ja) | 1985-08-14 | 1985-08-14 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6239064A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9616675B2 (en) | 2007-03-01 | 2017-04-11 | Seiko Epson Corporation | Ink set, ink-jet recording method, and recorded material |
-
1985
- 1985-08-14 JP JP17973285A patent/JPS6239064A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9616675B2 (en) | 2007-03-01 | 2017-04-11 | Seiko Epson Corporation | Ink set, ink-jet recording method, and recorded material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6239064A (ja) | 1987-02-20 |
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