JPH04175671A - Semiconductor evaluation method - Google Patents
Semiconductor evaluation methodInfo
- Publication number
- JPH04175671A JPH04175671A JP2304346A JP30434690A JPH04175671A JP H04175671 A JPH04175671 A JP H04175671A JP 2304346 A JP2304346 A JP 2304346A JP 30434690 A JP30434690 A JP 30434690A JP H04175671 A JPH04175671 A JP H04175671A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor package
- mechanical stress
- jig
- stress
- evaluation method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000011156 evaluation Methods 0.000 title claims abstract description 13
- 230000035882 stress Effects 0.000 claims abstract description 25
- 230000008646 thermal stress Effects 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 238000005452 bending Methods 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、面実装時の半導体パッケージへの熱ストレス
と同時に機械ストレスを加え2機械ストレスの定量的な
評価ができる半導体評価方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor evaluation method capable of quantitatively evaluating mechanical stress by adding mechanical stress to a semiconductor package at the same time as thermal stress during surface mounting.
従来の技術
第2図により従来の半導体評価方法をはんだ浸せき方法
を例にして説明する。BACKGROUND OF THE INVENTION A conventional semiconductor evaluation method will be explained using a solder dipping method as an example with reference to FIG.
第2図は、従来のはんだ浸せきを用いた半導体パッケー
ジの実装評価方法の例であり、1は半導体パッケージ、
2は溶融したはんだ、3はビンセット、4ははんだ槽で
ある。Fig. 2 is an example of a mounting evaluation method for a semiconductor package using conventional solder dipping.
2 is molten solder, 3 is a bottle set, and 4 is a solder bath.
これは、ビンセット3で半導体パッケージ1をはさみ、
溶融したはんだ2に半導体パッケージ1を浸せきし、熱
ストレスを加えるという実装評価方法である。This involves sandwiching the semiconductor package 1 between bin sets 3 and
This is a mounting evaluation method in which the semiconductor package 1 is immersed in molten solder 2 and thermal stress is applied.
発明が解決しようとする課題
しかし、この方法においては、半導体パッケージ1に熱
ストレスを加えることは可能であるが、同時に機械スト
レス(熱によるプリント基板(図示せず)のそりからく
る半導体パッケージ1への機械ストレス等を想定)を加
えることができない。Problems to be Solved by the Invention However, in this method, it is possible to apply thermal stress to the semiconductor package 1, but at the same time, mechanical stress (from warping of the printed circuit board (not shown) due to heat) to the semiconductor package 1 can be applied. mechanical stress, etc.) cannot be applied.
本発明は、上記のような欠点を解決する半導体評価方法
を提供することを目的とする。An object of the present invention is to provide a semiconductor evaluation method that solves the above-mentioned drawbacks.
課題を解決するための手段
本発明は、上記の目的を達成させるため、半導体装評価
試験において、半導体パッケージに熱ストレスを加えな
がら同時に機械ストレスを加え、この機械ストレスを定
量的に評価するものである。Means for Solving the Problems In order to achieve the above object, the present invention applies thermal stress and mechanical stress to a semiconductor package at the same time in a semiconductor device evaluation test, and quantitatively evaluates this mechanical stress. be.
作用
このようにすれば、半導体装置をプリント基板に実装し
た際のプリント基板からの応力等を想定した機械ストレ
スの評価を、熱ストレスの評価と同時に行うことができ
る。By doing this, it is possible to evaluate mechanical stress, which assumes stress from the printed circuit board when a semiconductor device is mounted on the printed circuit board, at the same time as thermal stress evaluation.
実施例
次に、本発明の一実施例を第1図により説明する。第1
図において、半導体パッケージ1の左右両側を治具5で
はさみ、この状態で溶融はんだ2に半導体パッケージ1
を浸せきする。このようにすれば溶融はんだ2による熱
ストレスを半導体パッケージ1に加える。この状態で治
具5に一体に形成した機械ストレス印加用の治具6を第
1図に矢印で示すように内・外側に動かすことで、半導
体パッケージ1に機械ストレスを加える。この機械スト
レスは、機械ストレス印加用の治具6の動きに応じて受
動する目盛7により、半導体パッケージ1の曲げ量を定
量化することができる。Embodiment Next, an embodiment of the present invention will be explained with reference to FIG. 1st
In the figure, the right and left sides of the semiconductor package 1 are sandwiched between the jig 5, and in this state, the semiconductor package 1 is applied to the molten solder 2.
Soak. In this way, thermal stress due to the molten solder 2 is applied to the semiconductor package 1. In this state, a mechanical stress applying jig 6 formed integrally with the jig 5 is moved inward and outward as shown by arrows in FIG. 1 to apply mechanical stress to the semiconductor package 1. This mechanical stress can be used to quantify the amount of bending of the semiconductor package 1 using a scale 7 that is passively applied according to the movement of a jig 6 for applying mechanical stress.
発明の効果
以上に述べたように、本発明によれば、半導体パッケー
ジに熱ストレスを加えると同時に、機械ストレスを加え
、かつこの機械ストレスを定量的に評価することができ
るから、実装時のプリント基板からの応力等を想定した
評価を実施することができる。Effects of the Invention As described above, according to the present invention, thermal stress and mechanical stress can be applied to a semiconductor package at the same time, and this mechanical stress can be quantitatively evaluated. It is possible to perform evaluations assuming stress etc. from the substrate.
第1図は、本発明の一実施例における半導体評価方法を
示す断面図、第2図は従来の半導体評価方法を示す断面
図である。
1・・・・・・半導体パッケージ、2・・・・・・溶融
はんだ、3・・・・・・ビンセット、4・・・・・・は
んだ槽、5・・・・・・パッケージを上下よりはさみ込
みむ治具、6・・・・・・機械ストレス印加用治具、7
・・・・・・機械ストレス定量化用目盛。FIG. 1 is a sectional view showing a semiconductor evaluation method according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor evaluation method. 1...Semiconductor package, 2...Melted solder, 3...Bin set, 4...Solder bath, 5...Package up and down Jig for pinching, 6... Jig for applying mechanical stress, 7
・・・・・・Scale for quantifying mechanical stress.
Claims (1)
械ストレスを加え、上記機械ストレスを定量化すること
を特徴とする半導体評価方法。A semiconductor evaluation method characterized by applying mechanical stress to a semiconductor package while simultaneously applying thermal stress to the semiconductor package, and quantifying the mechanical stress.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2304346A JPH04175671A (en) | 1990-11-08 | 1990-11-08 | Semiconductor evaluation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2304346A JPH04175671A (en) | 1990-11-08 | 1990-11-08 | Semiconductor evaluation method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04175671A true JPH04175671A (en) | 1992-06-23 |
Family
ID=17931909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2304346A Pending JPH04175671A (en) | 1990-11-08 | 1990-11-08 | Semiconductor evaluation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04175671A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008004669A (en) * | 2006-06-21 | 2008-01-10 | Nec Electronics Corp | Manufacturing method of semiconductor device |
-
1990
- 1990-11-08 JP JP2304346A patent/JPH04175671A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008004669A (en) * | 2006-06-21 | 2008-01-10 | Nec Electronics Corp | Manufacturing method of semiconductor device |
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